KR20200133276A - Texturing of surfaces without bead blasting - Google Patents

Abstract

A system is provided for providing texture to a surface of a component for use in a semiconductor processing chamber. The system includes an enclosure including a processing zone; A support disposed in the processing area; A photon light source for generating a stream of photons; An optical module operatively coupled to the photon light source; And a lens. The optical module includes a beam modulator for generating a beam of photons from a stream of photons generated from a photon light source; And a beam scanner for scanning the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner, and to distribute the beam of photons at a wavelength ranging from about 345 nm to about 1100 nm across the surface of the component, to form a plurality of features on the component. .

Description

Texturing of surfaces without bead blasting

[0001] Embodiments of the present disclosure generally relate to a method, system, and apparatus for texturizing a surface of a component for use in a semiconductor processing chamber.

[0002] As integrated circuit devices continue to be manufactured with reduced dimensions, the fabrication of these devices becomes more susceptible to reduced yields due to contamination. As a result, fabricating integrated circuit devices, in particular integrated circuit devices with smaller physical sizes, requires contamination to be controlled to a greater degree than previously considered necessary.

[0003] Contamination of integrated circuit devices can arise from sources such as undesirable stray particles impinging on the substrate during thin film deposition, etching, or other semiconductor fabrication processes. In general, fabrication of integrated circuit devices includes the use of chambers, including but not limited to physical vapor deposition (PVD) sputtering chambers, chemical vapor deposition (CVD) chambers, and plasma etch chambers. . During the course of the deposition and etching processes, materials often condense from the gaseous phase onto the various interior surfaces of the chamber and the surfaces of the chamber components disposed within the chamber. As materials condense from the gaseous phase, they form solid masses on the chamber and component surfaces. Such condensed foreign matter accumulates on the surfaces and is liable to be separated from the surfaces or flaky during the wafer process sequence or in the middle of the wafer process sequence. These separated foreign matter can impinge on the wafer and devices formed on the wafer and contaminate them. Contaminated devices have to be discarded frequently, thereby reducing the manufacturing yield of the process.

[0004] In order to prevent separation of the formed foreign matter, a specific surface texture may be provided on the inner surfaces of the chamber and the surfaces of the chamber components disposed within the chamber. The surface texture is configured such that foreign matter formed on these surfaces has an improved adhesion to the surface so that the foreign matter is separated and is less likely to contaminate the wafer. The key parameter of surface texture is surface roughness.

[0005] One common texturizing process is bead blasting. In the bead blasting process, solid blasting beads are propelled towards the surface to be textured. One way to allow solid blasting beads to be propelled towards the surface to be texturized is by pressurized gas. Solid blasting beads are made of a suitable material, such as aluminum oxide, glass, silica, or hard plastics. Depending on the desired surface roughness, the blasting beads can be of various sizes and shapes.

[0006] However, it can be difficult to control the uniformity and repeatability of the bead blasting process. Moreover, during the bead blasting process, the surface to be textured may become sharp and jagged, and thus the tips of the surface may break off due to the collision of the solid blasting beads, and a source of contamination may be introduced. In addition, blasting beads may be entrapped or embedded within the surface during the bead blasting process. For example, if the surface to be textured includes small through-holes of varying widths (eg, gas distribution showerhead), the blasting beads may be trapped in the through-holes. In such situations, blasting beads, for example, prevent the through-hole from functioning as a gas passage, as well as introduce a potential source of contamination to the wafer.

[0007] Electromagnetic beams can also be used to texturize the chamber surface. Using an electromagnetic beam to texturize the chamber surface can overcome some of the above identified problems associated with bead blasting. However, the electromagnetic beam must be operated under vacuum to prevent scattering. Scattering can occur when electrons in an electromagnetic beam interact with air or other gas molecules. As a result, the electromagnetic beam must be operated within a vacuum chamber. The need for a vacuum chamber limits the size of the components that can be texturized, as it must be possible for the component to fit within the vacuum chamber. Moreover, the capital costs associated with operating the electromagnetic beam are significantly higher than those associated with the bead blasting process. For example, the need for a vacuum chamber increases the costs associated with texturing a surface using an electromagnetic beam.

[0008] Accordingly, there is a need for an improved texturizing process that overcomes the problems associated with bead blasting, while avoiding the capital costs and size constraints associated with the use of an electromagnetic beam.

[0009] One implementation of the present disclosure relates to a method of providing texture to a surface of a component for use in a semiconductor processing chamber. The method includes directing a beam of photons through ambient air or nitrogen to a surface of a component; And scanning the beam of photons across the first region of the surface of the component to form a plurality of features on the surface within the first region, wherein the formed features are depressions, Protuberances, or combinations thereof.

[0010] Another implementation of the present disclosure relates to a method of providing a texture to a surface of a component for use in a semiconductor processing chamber. The method includes directing a beam of photons to a surface of a component in an atmosphere having a pressure generally equal to atmospheric pressure; And scanning the beam of photons over the first region of the surface of the component to form a plurality of features on the surface within the first region, wherein the formed features are depressions, protrusions, or a combination thereof. admit.

[0011] Another embodiment of the present disclosure is a component for use in a semiconductor processing chamber. The component includes a plurality of features on a surface within the first region, wherein the features formed are depressions, protrusions, or combinations thereof. Features are formed by scanning a beam of photons across the surface of the component.

[0012] Another embodiment of the present disclosure is a system for providing texture to a surface of a component for use in a semiconductor processing chamber. The system includes an enclosure including a processing zone; A support disposed in the processing region and including a support surface; A photon light source for generating a stream of photons; An optical module operatively coupled to the photon light source to receive a stream of photons from the photon light source; And a lens. The optical module includes a beam modulator for generating a beam of photons from a stream of photons generated from a photon light source; And a beam scanner for scanning the beam of photons across the surface of the component. The lens is used to receive the beam of photons from the beam scanner, and to distribute the beam of photons at a wavelength ranging from about 345 nm to about 1100 nm across the surface of the component, to form a plurality of features on the component. .

[0013] Another embodiment of the present disclosure is a method of providing texture to a surface of a component for use in a semiconductor processing chamber. The method includes generating a stream of photons; Shaping the stream of photons into a beam; Scanning a beam of photons towards the surface of the component through a processing zone containing a gas concentration of ambient air or nitrogen at a pressure generally equivalent to atmospheric pressure; And distributing the beam of photons across the surface of the component to form a plurality of features on the surface of the component.

[0014] Additionally, another embodiment of the present disclosure is a system for providing texture to a surface of a component for use in a semiconductor processing chamber. The system includes an enclosure including a processing zone maintained in a Class 1 environment having a pressure generally equivalent to atmospheric pressure; A support disposed in the processing region and including a support surface; A photon light source for generating a stream of photons; An optical module operatively coupled to the photon light source to receive a stream of photons from the photon light source; And a lens. The optical module includes a beam modulator for generating a beam of photons from a stream of photons generated from a photon light source; And a beam scanner for scanning the beam of photons across the surface of the component. The lens receives the beam of photons from the beam scanner, and distributes the beam of photons with a wavelength in the range of about 345 nm to about 1100 nm across the surface of the component, to form a plurality of features on the component, It is placed in the processing area.

[0015] In such a way that the above-listed features of the present disclosure may be understood in detail, a more specific description of the present disclosure briefly summarized above may be made with reference to implementations, some of which may be described in the accompanying drawings. It is illustrated in However, it should be noted that the appended drawings are merely illustrative of exemplary implementations and should not be regarded as limiting the scope of the present disclosure.
1 illustrates a schematic diagram of a laser machine and support system according to the present disclosure.
[0017] Figure 2 illustrates an alternative schematic diagram of a laser machine and support system, according to the present disclosure.
3 illustrates a top view of a gas distribution showerhead according to the present disclosure, the area to be texturized being marked by boundary lines.
4 illustrates a process sequence for a method of operating a laser machine and a support system according to the present disclosure.
5 and 6 illustrate a surface morphology of a repeating random form, the surface morphology being generated by a laser machine according to the present disclosure. 5 illustrates a perspective view showing the surface morphology, and FIG. 6 illustrates a plan view showing the surface morphology.
7 and 8 illustrate a surface morphology in the form of a repetitive wave, the surface morphology being generated by a laser machine according to the present disclosure. 7 illustrates a perspective view showing a surface morphology, and FIG. 8 illustrates a top view and a side view showing the surface morphology.
9 and 10 illustrate a surface morphology in the form of a repeating square, the surface morphology being generated by a laser machine according to the present disclosure. 9 illustrates a perspective view showing a surface morphology, and FIG. 10 illustrates a plan view and a side view showing the surface morphology.
[0023] Figure 11 illustrates a schematic diagram of a laser machine and a laser device, according to the present disclosure.
12 illustrates an alternative schematic diagram of a laser machine and a laser device, according to the present disclosure.
[0025] FIG. 13 shows a graph diagram comparing results of components textured using a bead blasting process and a process according to the present disclosure.
In order to facilitate understanding, the same reference numbers have been used where possible to designate the same elements common to the drawings. It is contemplated that elements and features of one implementation may be beneficially included in other implementations without further explanation.
[0027] The patent or application file contains at least one drawing made of color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Secretariat upon request and payment of the necessary fees.

[0028] Implementations described herein utilize a beam of photons generated by a laser to perform a texturizing process on the surface of a component for use in a semiconductor processing chamber. A beam of photons is directed to the surface of the component and is scanned over an area of the surface to form a plurality of features. Features formed on the surface include depressions, protrusions, and/or combinations thereof. The beam of photons can be reduced in intensity and/or defocused, and/or scanned at a specific speed of movement to form a desired surface morphology.

[0029] 1 shows a schematic diagram of a support system 102 and a laser machine 100 that may be used to texturize a surface 103 of a component 104. Component 104 may be, for example, a gas distribution showerhead, chamber wall, or electrostatic chuck. The laser machine 100 includes a power supply 106, a controller 108, and a laser device 116. The laser device 116 outputs a beam 112 of photons. The controller 108 may include a modulator and/or scanner to modulate and scan the beam 112 of photons. The laser machine may further comprise a pulse supply unit for pulsing the beam 112 of photons. Pulsing the beam 112 of photons can help minimize the amount of heat applied to the surface 103 of the component 104. In addition, pulsing the beam 112 of photons can help reduce problems that arise as a result of the reflectivity of the surface 103 of the component 104. Embodiments disclosed herein may be utilized to texturize the surface 103 of the component 104 to have an arithmetic mean of a roughness profile Ra of about 60 μin to about 360 μin.

[0030] Component 104 may include a material, such as a metal or metal alloy, a ceramic material, a polymer material, a composite material, or combinations thereof. In one implementation, the component 104 comprises steel, stainless steel, tantalum, tungsten, titanium, copper, aluminum, nickel, gold, silver, aluminum oxide, aluminum nitride, silicon, silicon nitride, silicon oxide, silicon carbide, sapphire. (Al ₂ O ₃ ), silicon nitride, yttria, yttrium oxide, and combinations thereof. In one embodiment, component 104 is a metal alloy with, for example, austenite-in tungsten alloy (e.g., a-type stainless rivers, Fe-Ni (e.g., Inconel ^TM alloy) of chromium alloys, nickel-chromium-molybdenum Hastelloy ^™ ), copper zinc alloys, chromium copper alloys (eg, 5% or 10% Cr with balance Cu), and the like. In another implementation, the component comprises quartz. Component 104 can also include polymers, such as polyimide (Vespel ^™ ), polyetheretherketone (PEEK), polyarylate (Ardel ^™ ), and the like. In another implementation, component 104 is a material such as gold, silver, aluminum silicon, germanium, germanium silicon, boron nitride, aluminum oxide, aluminum nitride, silicon, silicon nitride, silicon oxide, silicon carbide, yttria, yttrium Oxides, non-polymers, and combinations thereof.

[0031] The support system 102 may be positioned downstream of the laser machine 100. The support system 102 includes a support 122 for supporting the component 104, such as similar to the substrate support in one or more embodiments. The support system 102 and the laser machine 100 are positioned relative to each other such that the beam 112 of photons output by the laser device 116 is directed to the surface 103 of the component 104. In one implementation of the present disclosure illustrated in FIG. 1, the laser machine 100 may further comprise operating means 124 for adjusting the position of the output of the laser device 116. In such an implementation, the support 122 can be held in a fixed state, and the actuation means 124 can adjust the position of the output of the laser device 116, thereby reducing the number of photons output by the laser device 116 It is possible to cause the beam 112 to be scanned across the surface 103. In an alternative implementation of the present disclosure illustrated in FIG. 2, the support system 102 may include actuating means 124 for moving the support 122. In such an implementation, the output of the laser device 116 can be kept fixed, and the actuation means 124 can adjust the position of the support 122, thereby reducing the number of photons output by the laser device 116 It is possible to cause the beam 112 to be scanned across the surface 103. Actuating means 124 for adjusting the position of either the laser device 116 or the support 122 include, for example, an XY stage, an extension arm, and/or a rotating shaft capable of translational and/or rotational movement. can do.

[0032] The controller 108 can be connected to the laser device 116 in a manner that allows the controller to control various parameters associated with the beam 112 of photons output by the laser device 116. In particular, the controller 108, in order to control at least the following parameters associated with the beam 112 of photons: wavelength, pulse width, repetition rate, speed of movement, power level, and beam size, the laser device 116 Can be connected to By being able to control these various parameters associated with the beam 112 of photons, the controller 108 can dictate the surface morphology formed on the surface 103 of the component 104. It should be understood that “speed of travel” includes implementations in which the beam of photons 112 is moved and the component 104 is fixed, and the implementation in which the beam of photons 112 is fixed and the component is moved. As shown in FIG. 2, the controller 108 may also be connected to the support system 102 in a manner that allows the controller to control the actuation means 124 connected to the support 122. Alternatively, a secondary controller may be connected to the support system 102 in order to control the actuation means 124 connected to the support 122.

[0033] The controller 108 may be one of any type of general purpose computer processor (CPU) that may be used in the industrial field. The computer may use any suitable memory, such as random access memory, read only memory, floppy disk drive, hard disk, or any other form of digital storage, either local or remote. Various support circuits can be coupled to the CPU to support the processor in a conventional manner. If necessary, software routines can be stored in memory or executed by a remotely located second CPU. The software routine, when executed, transforms a general purpose computer into a specific process computer that controls operations such that the chamber process is performed. Alternatively, the implementations described herein may be performed in hardware as application specific integrated circuits or other types of hardware implementations, or may be performed in software or a combination of hardware.

[0034] The laser device 116 of the laser machine 100 may have a power output ranging from about 3 W to about 30 W. Alternatively, the laser machine can have a power output in the range of about 1 W to about 150 W. The laser device 116 may also be capable of pulsing the beam 112 of photons, and parameters associated with the beam 112 of photons (e.g., wavelength, pulse width, pulse frequency, repetition rate, movement speed, power). Level, and beam size), which are discussed further below. The laser device 116 of the laser machine 100 may be a commercially available laser. An example of a commercially available laser machine that can be in accordance with the present disclosure is the IPG YLPP laser from Spectral Physics Quanta-Ray Laser.

[0035] The laser machine 100 and support system 102 do not require a vacuum environment to perform the texturing process, since the output of the laser device 116 is a beam 112 of photons. Thus, the output of laser device 116 is different from a conventional electromagnetic beam generation system in which an electron-beam is used to perform the texturing process. Electromagnetic beam systems typically require a vacuum environment (eg, a vacuum chamber) due to the interaction and scattering of electrons with ambient gas atoms, and thus a vacuum environment is required to maintain precise control of the electron beam. As discussed above, the requirements of a vacuum environment impose physical constraints on the size of a component that can be texturized using an electromagnetic beam system, since it must be possible for the component to fit within the vacuum chamber. In addition, the requirement of a vacuum environment increases the complexity of the electromagnetic system, since the vacuum chamber must contain special equipment (eg, pumps, sensors, seals). As a result, electromagnetic beam systems have significantly higher capital costs than would be incurred when using the laser machine 100 and support system 102 discussed in this disclosure to perform the texturizing process.

[0036] Thus, the laser machine 100 and support system 102 can be used in an ambient air environment where the air through which the beam of photons 112 passes is approximately 78% nitrogen and approximately 21% oxygen. However, in some situations, it may be desirable to place the laser machine 100 and support system 102 in an oxygen-depleted environment. In such a situation, the laser machine 100 and support system 102 may be positioned within a chamber where nitrogen gas is used instead of ambient air. Since no vacuum is required, the pressure in the chamber can be maintained at atmospheric pressure. It should be understood that the “atmospheric pressure” may vary from location to location. In some embodiments, the pressure in the region where component 104 is disposed during processing may not be regulated.

[0037] 4 shows a process sequence 200 for a method of operating the laser machine 100 and support system 102, the process sequence 200 starting at 201 and ending at 209. In box 202, component 104 is positioned on support 122. In box 204, a first zone 126 is defined on the surface 103 of the component 104. As illustrated in FIG. 3 where component 104 is a gas distribution showerhead 133 having a plurality of through-holes 135, the first zone 126 is a first outer boundary defining the outer boundaries of the first zone. It has a border 127. The first outer boundary 127 defines a first surface area. The ratio of the first surface area to the second surface area of component 104 may be at least 0.6. The second surface area of the component 104 is defined by a second outer boundary 132 of the textured surface 103. Thus, the first surface area positioned within the second surface area may be at least 60% of the second surface area. It should be understood that the size of the first and second surface regions will vary depending on the shape and size of the component 104 being texturized. Alternatively, the ratio of the first surface area to the second surface area can be greater than 0.7, 0.8, and/or 0.9.

At box 206, the laser machine 100 is powered through a power supply 106 so that the laser device 116 outputs a beam 112 of photons. As discussed above, the controller 108 of the laser machine 100 can change the parameters associated with the beam 112 of photons according to the desired texture on the surface 103. In one implementation, the beam of photons 112 may have a wavelength in the range of about 345 nm to about 1100 nm. In other implementations, the beam of photons can have a wavelength in the ultraviolet light range (about 170 nm to about 400 nm). In yet another implementation, the beam of photons can have a wavelength in the infrared light range (about 700 nm to about 1.1 mm). The beam 112 of photons output by the laser device 116 is directed towards the surface 103 of the component 104 at a position within the first zone 126. The beam of photons 112 may have a beam diameter ranging from about 7 μm to about 75 μm at the surface 103 of component 104. Alternatively, the beam of photons 112 may have a beam diameter in the range of about 2.5 μm to about 100 μm at the surface 103 of component 104. In one implementation, the working distance traveled by the beam 112 of photons is between about 50 millimeters and about 1,000 millimeters. In another implementation, the working distance traveled by the beam 112 of photons is between about 200 millimeters and about 350 millimeters. Since the laser device 116 of the laser machine 100 can have a power output in the range of about 1 W to about 150 W, the beam of photons 112 is in the range of about 10x10 ^-6 J to about 400x10 ^-6 J. Can have a pulse power of The beam of photons 112 may have a pulse width in the range of about 10 ps to about 30 ns. Additionally, the beam of photons 112 may have a pulse repetition rate in the range of about 10 KHz to about 200 KHz in one embodiment, and more specifically, about 10 KHz to about 3 MHz in another embodiment. . The controller 108 can be used to control the pulse width and/or pulse repetition rate of the laser device 116.

[0039] In box 208, a beam of photons 112 is scanned across a first region 126 of surface 103, thereby forming a plurality of features on the surface. The beam of photons 112 is a first region of the surface 103 at a moving speed in the range of about 0.1 m/s to about 30 m/s, such as with the beam of photons 112 being pulsed from the laser device 116. It can be scanned over 126. As can be seen in FIGS. 5-10, the features formed as a result of the beam 112 of photons being scanned over the first region 126 of the surface 103 include depressions, protrusions, or combinations thereof. Include. The controller 108 can be programmed to change certain parameters associated with the beam of photons 112 when the beam of photons 112 is being scanned across the first region 126. For example, the controller 108 can pulse the beam of photons 112 while the beam of photons 112 is being scanned over the first region 126. In one implementation, the controller 108 can control the laser device 116 to have a pulse width in the range of about 0.2 ns to about 100 ns. In one embodiment, the controller 108 can control the laser device 116 to have a pulse width ranging from about 400 fs to about 200 ns.

[0040] In this way, the laser machine 100 can be used to form the entire surface morphology for the first area.

[0041] Depending on the situation, the laser machine 100 can be used to form three different types of surface morphologies for the first zone 126. As shown in Figs. 5 and 6, the first surface morphology is a repetitive random shape, where the repetitive random shape creates a combination of protrusions and depressions. It should be understood that a plurality of protrusions may have, for example, a flat surface and a convex surface. In Figures 5 and 6, the greatest height change from the lowest depression to the highest protrusion is in the range of about 4,000 nm to about 4,500 nm. Since the surface morphology is a repeating random shape, the protrusions and depressions do not form a periodic wave.

[0042] The form of repetition can be achieved by synchronizing the pulse frequency and scan rate. As the pulsing laser and the substrate move with respect to each other, the laser emits radiation that affects the substrate surface at repeating intervals, creating a repeating shape. The exact shape of the repetition shape can be adjusted by adjusting the temporal profile of the laser pulses against the scan rate. If a laser pulse with a very fast power ramp time compared to the scan rate is used, since the substrate does not translate far away during ramp-up or ramp-down. However, the repeating shape will tend to have a substantially rectangular profile. If the ramp time is very short compared to the pulse duration, the repetition shape will also tend to be a substantially rectangular profile, since the temporal profile of the laser pulse is substantially flat. If the scan rate is low compared to the pulse duration or ramp time, the repetition shape will also tend to have a substantially rectangular profile, since the photons delivered by each laser pulse are concentrated in a smaller area of the substrate. Increasing the ramp time and/or scan rate relative to the pulse duration will create rounder or tapered corners of the features being formed. By coupling the waveform generator to the laser power supply, the laser pulses themselves can also be modulated. In this way, pulses can be produced with more tapered ramp rates, and even sinusoidal temporal profiles. These measures will produce features that tend to be wave-shaped. The feature pitch is determined by the relationship between the scan rate and the pulse frequency. Thus, the feature pitch can be independently adjusted by adjusting the pulse frequency, which will be limited at the high end by the pulse duration.

[0043] Examples of Ra in the repetitive random form shown in FIGS. 5 and 6 are about 60 μin when the power output of the laser machine 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 7 μm. to be. It should be understood that the value of Ra will vary depending on the power output of the laser machine 100 and various variables associated with the beam 112 of photons. The repetitive random form achieved using the laser machine 100 can be achieved using the bead blasting process, except that some of the problems inherent in the bead blasting process are avoided due to the use of the laser machine 100. It may have a surface morphology and Ra value similar to the surface morphology and Ra value. For example, if component 104 is a gas distribution showerhead 133 (schematically illustrated in FIG. 3), there will be a plurality of tapered through-holes 135. As discussed above, the bead blasting process involves blasting a plurality of beads at high velocity on the surface to be textured. As a result, there is an inherent lack of control and precision associated with the bead blasting process.

[0044] Beads used in the bead blasting process may also be trapped or embedded within the through-holes 135. Additionally, the beads may hit the corners or edges of the through-holes 135 to undesirably change the profile of the through-holes rather than texturizing the surface 103. Using the laser machine 100 to texturize the gas distribution showerhead 133 with a repetitive random shape surface morphology, due to the higher precision that can be achieved through this texturing process, the penetration in the showerhead 133 -Will not change the boundary profile of the holes 135 so much. The laser machine 100 may texturize the surface 103 within the first region 126 such that the repeating random shape continues to repeat within the first outer boundaries 127.

[0045] As shown in Figs. 7 and 8, the second surface morphology is in the form of a repeating wave, where the repeating wave form creates a combination of protrusions and depressions. It should be understood that a plurality of protrusions may, for example, have a generally convex surface. 7 and 8, the greatest height change from the lowest depression to the highest protrusion is in the range of about 4,000 nm to about 4,500 nm. Since the surface morphology is in the form of a repeating wave, the protrusions and depressions form a periodic profile in which each of the plurality of protrusions is generally convex and pointed. The periodic profile associated with the repeating wave shape repeats throughout the first region 126 of the surface 103 along both the x-axis of the surface and the y-axis of the surface.

[0046] An example of the arithmetic mean of the roughness profile Ra of the repetitive wave shape shown in FIGS. 7 and 8 is, the power output of the laser machine 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 7 At μm, it is about 108 μin. It should be understood that the value of Ra will vary depending on the power output of the laser machine 100 and various variables associated with the beam 112 of photons. Unlike the repetitive random shape, the repetitive wave shape differs from the surface morphology typically achieved using a bead blasting process. The laser machine 100 may texturize the surface 103 in the first region 126 such that the repeating wave shape continues to repeat within the first outer boundaries 127.

[0047] 9 and 10, the third surface morphology is a repeating square shape, where the repeating square shape creates a combination of protrusions and depressions. It should be understood that a plurality of protrusions may, for example, have a generally flat surface. 9 and 10, the greatest height change from the lowest depression to the highest protrusion is in the range of about 4,000 nm to about 4,500 nm. Since the surface morphology is in the form of a repeating square, the protrusions and depressions form a periodic profile in which each of the plurality of protrusions becomes a generally flat portion. The periodic profile associated with the repeating square shape repeats throughout the first region 126 of the surface 103 along both the x-axis of the surface and the y-axis of the surface.

[0048] An example of the arithmetic mean of the roughness profile Ra of the repetitive square shape shown in FIGS. 9 and 10 is, the power output of the laser machine 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 25. At μm, it is about 357 μin. It should be understood that the value of Ra will vary depending on the power output of the laser machine 100 and various variables associated with the beam 112 of photons. The repeating square shape may be applicable, particularly when component 104 is an electrostatic chuck. As best seen in Fig. 9, the protrusions and depressions in the repeating square shape create a plurality of passages. The plurality of passages allow gas to pass through the passages, for example, under a silicon wafer lying on top of an electrostatic chuck during wafer processing.

[0049] To help planarize the top surfaces of the protrusions, a subsequent polishing process may be performed after the texturizing process, thereby aiding the adhesion of the silicon wafer to the electrostatic chuck during wafer processing. The portion of the component 104 that is not planarized during the polishing process will retain the surface roughness, thereby assisting in preventing separation of condensed foreign matter in the plurality of passages during wafer processing. The laser machine 100 may texturize the surface 103 in the first region 126 such that the repeating square shape continues to repeat within the first outer boundaries 127.

[0050] Another advantage associated with the use of the laser machine 100 is that prior to the box 202 of the process, the surface 103 of the component 104 to be textured does not have to undergo a precision pre-clean process. Instead, only a rough pre-clean process is required to degrease the surface 103 of the component 104. This differs from electromagnetic beam systems where precision pre-cleaning processes are generally required due to the highly reactive nature of the electron beam.

[0051] Another advantage associated with the use of the laser machine 100 to texturize the surface 103 of the component 104 is, after the box 202, it pumps down the pressure in the vacuum chamber, such as when an electromagnetic beam system is used. There are no additional steps to (pump down). As discussed above, the electromagnetic beam system is operated within a vacuum environment, whereby the pressure of the environment is required to be pumped down. The laser machine 100 and the support system 102 may be positioned within the chamber for the purpose of creating an oxygen-depleted environment, but the environmental pressure need not be pumped down. Because this pump-down step is eliminated, the time required to texturize the surface 103 of the component 104 using the laser machine 100 is the time required to texturize the surface of the component using an electron beam. Shorter than time This helps to increase the throughput associated with texturing the surface of the components using the laser machine 100 as compared to texturing the surface of the components using an electromagnetic beam system. The throughput associated with laser machine 100 is also more than the throughput associated with using an electromagnetic beam system, which means that the speed of movement at which an electron beam can be scanned across a surface to form a plurality of features is equal to the beam of photons. 112) is significantly slower than the speed of movement that can be scanned across the surface. For example, the speed of movement of the electron beam ranges from about 0.02 M/s to about 0.03 M/s when texturing the surface. As discussed above, the speed of movement of the beam 112 of photons, when texturing the surface, ranges from about 0.1 M/s to about 300 M/s.

[0052] Another advantage associated with texturing the surface 103 of the component 104 using the beam 112 of photons output by the laser device 116 is the beam of photons output by the laser device 116 ( It is that texturing the surface 103 of the component 104 utilizing 112) may result in a cleaner process than using, for example, bead blasting or an electron beam. Depending on the wavelength of the beam of photons 112, the material of the surface 103 to which the beam of photons is directed can primarily receive optical radiation or thermal energy to modify the surface. Optical radiation creates a molten material or slag by melting the surface 103 of the component 104 at the location where the beam of photons is directed, and the molten material or slag collapses when re-solidified. Create a part or protrusion. Since the kinetic energy associated with the molten material can be minimized, it is less likely that the molten material will be knocked off the remaining surface 103 and redeposited at some other location. This reduces the amount of re-deposition that could otherwise occur. Conversely, when using an electromagnetic beam system, the component being texturized is often buried with electrons interacting with the electron beam to generate significant energy, whereby at least a portion of the molten material is knocked off the remaining surface, resulting in , The likelihood of re-deposition is increased. As a result, texturing the surface using a beam of photons 112 may result in a cleaner process than texturing the surface using an electron beam.

[0053] The beam 112 of photons transmitted to the surface 103 of the component 104 by the laser device 116 causes significant or significant distortion (e.g., melting, warping, cracking, etc.) of the component 104. It should be noted that it is not intended to be done. Significant or significant distortion of component 104 may be generally defined as a condition in which it is not possible for component 104 to be used for its intended purpose due to the application of a texturizing process.

[0054] 11 and 12 show schematic diagrams of laser machines 100 that may be used to texturize the surface 103 of the component 104. In particular, FIGS. 11 and 12 show different arrangements, parts, and elements for laser machine 100 and/or laser device 116. As shown in FIG. 11, laser machine 100 may have a vertical orientation with respect to component 104, or, as shown in FIG. 12, laser device 116 may have a horizontal orientation with respect to component 104. Can have As discussed above, component 104 is used in a semiconductor processing chamber. Component 104 may be, for example, a gas distribution showerhead, shield, chamber liner, cover ring, clamp ring, substrate support pedestal, and/or an electrostatic chuck. Thus, after being texturized by laser machine 100, component 104 is used as a component of a semiconductor processing chamber, where semiconductors such as wafers are processed within the semiconductor processing chamber.

[0055] As discussed above, laser device 116 is used to output a beam of photons. The laser device 116 in FIGS. 11 and 12 is shown as comprising a light source 142, such as a photon light source, an optical module 144, and a lens 146, each of which is operatively coupled to each other. Ring. However, in other embodiments, the laser device 116 is shown as including a light source 142, an optical module 144, and a lens 146, but the disclosure is not limited thereto. For example, in one or more other embodiments, the power supply 106 and/or controller 108 shown in FIGS. 1 and 2 may additionally or alternatively be used without departing from the scope of the present disclosure. A source 142, an optical module 144, and/or a lens 146 may be included.

[0056] Light source 142 is used to generate a source of light, and in particular a stream of photons in this embodiment. An optical module 144 operably coupled to the light source 142 receives a stream of photons from the light source 142 to shape, direct, or otherwise shape the stream of photons from the light source 142. Modulate. The optical module 144 includes a beam modulator and a beam scanner, which is positioned downstream (relative to the light source 142) from the beam modulator. The beam modulator receives a stream of photons from the light source 142 and produces a beam of photons from the stream of photons. For example, a beam modulator may be used to generate a beam of photons with a single focal point by shaping a stream of photons from light source 142. The beam scanner is used to receive a beam of photons from the beam modulator and scan the beam of photons across the surface 103 of the component 104. Thus, beam scanners are used to move, deflect, and otherwise control the direction of the beam of photons, such as through the use of electromechanical actuators.

The lens 146 is used to receive a beam of photons from the optical module 144 and more specifically from the beam scanner, and distribute the beam of photons across the surface 103 of the component 104 . Since the beam modulator of the optical module 144 is used to focus the stream of photons into a beam of photons, such as a single focal beam of photons, the lens 146 can focus a beam of photons over a predetermined area or region. It is used to distribute equally by defocusing. For example, lens 146 can be used to distribute a beam of photons over an area of about 355 mm ² . The beam of photons distributed across the surface 103 of the component 104 is one or more texturized features on the surface 103 of the component 104, such as depressions on the surface 103 of the component 104. And/or used to form protrusions.

[0058] The laser device 116 controls the power, speed, frequency, direction, distribution, and/or pulse(s) of the beam of photons emitted from the laser device 116 and scanned across the surface 103 of the component 104. It is used to For example, the light source 142 and/or the optical module 144 may be used to pulse the beam of photons while the beam of photons is scanned across the surface 103 of the component 104. Additionally, the beam scanner of the optical module 144 may be used to direct or scan a beam of photons across the surface 103 of the component 104 in one or more predetermined patterns. In one embodiment, a beam scanner may be used to scan a beam of photons using a line-by-line pattern, a sparrow pattern, and/or a random pattern. The sparrow pattern directs the beam of photons in an out-to-in or in-to-out pattern with respect to the middle or central region of the surface 103 of the component 104. By including scanning, you work with a radial pattern as opposed to a line-by-line pattern.

[0059] The laser device 116 is also used to distribute and scan a beam of photons vertically or horizontally from the lens 146 toward the surface 103 of the component 104. A support 122 comprising a support surface 190 is shown for use with the laser machine 100, and the component 104 is positioned between the lens 146 and the support 122. The support surface 190 is used to support the component 104 on the support 122, so that the component 104 allows the beam of photons to be distributed vertically towards the surface 103 of the component 104. In the arrangement shown in FIG. 11, it is positioned on the support surface 190 of the support 122. The support surface 190 of the support 122 is used as a barrier behind the component 104 in the arrangement shown in FIG. 12 in which a beam of photons is distributed horizontally towards the surface 103 of the component 104. An advantage to the horizontal arrangement shown in FIG. 12 is that gravity may be used to pull the material from the surface 103 of the component 104, such as when the material melts. This can result in a cleaner process than when the material can be redeposited or formed on the surface.

Still referring to FIGS. 11 and 12, a clean enclosure 150 or clean compartment is included for use with the laser machine 100. The clean enclosure 150 generally includes a processing zone 151 with a support 122 disposed in the processing zone 151. For example, component 104 is positioned within a clean enclosure 150 during the texturing process, where the processing zone 151 of the clean enclosure 150 is processed into a Class 1 environment according to classification parameters from ISO 14644-1. Includes a filtration system capable of maintaining the zone. Additionally, the support 122 and at least a portion of the laser device 116, such as the lens 146, are positioned within the clean enclosure 150. Since the laser machine 100 is used in a non-pressurized (e.g., atmospheric) environment, the pressure in the clean enclosure 150 may be approximately equal to atmospheric pressure, or may be approximately atmospheric, or the pressure may not be regulated. have. Alternatively and/or additionally, the clean enclosure 150 may be purged with an inert gas (eg, N ₂ ) to remove oxygen, water, and/or other process contaminants. Additionally, a conveyor may be used to introduce the component 104 into the clean enclosure 150 and onto the support 122 and/or a conveyor may be used from the support 122 and out of the clean enclosure 150. 104) can be used. For example, in such embodiments, the support 122 may comprise a conveyor. Alternatively, a separate robotic arm or similar mechanism could be used to make it possible to remove the component 104 from the conveyor and/or to place the component 104 on the conveyor.

13 shows components texturized using a bead blasting process 302, components texturized using a laser process 304 according to embodiments described herein, and within a semiconductor processing chamber. Shows a graphical diagram comparing the average elemental results of the specification 306 generally required for the components used. and provides the test the different elements in each of the x- axis component (e.g., trace metals (trace metal)), in the y- axis units of atoms / cm ² to provide an amount of the elements that are found on the surface of the component . As shown, the component texturized using the laser process 304 generally had fewer elements or trace metals than those required by the specification 306, and also, in general, a bead blasting process ( 302) had fewer elements or trace metals than those texturized. For example, as the beads used in the bead blasting process 302 generally contain sodium (Na), in contrast to the bead blasting process 302, sodium for components texturized using the laser process 304 The amount of was significantly reduced. Components texturized using the laser process 304 may generally have a higher amount of magnesium (Mg), but these components may subsequently be diluted with acid and high purity water to remove excess magnesium. For example, high temperature deionized water) can be used. Thus, components texturized using laser process 304 have a higher yield compared to components texturized using bead blasting process 302, which can be expected to be about 50% during subsequent semiconductor processing. Field, such as about 95%.

[0062] Although the foregoing relates to the implementation of the present disclosure, other and additional implementations of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the disclosure is determined by the following claims. .

Claims (15)

A system for providing a texture to a surface of a component for use in a semiconductor processing chamber, comprising:
An enclosure containing a processing area;
A support disposed in the processing region and including a support surface;
A photon light source for generating a stream of photons;
An optical module operably coupled to the photon light source to receive the stream of photons from the photon light source, the optical module comprising:
A beam modulator for generating a beam of photons from the stream of photons generated from the photon light source, and
A beam scanner for scanning the beam of photons across the surface of the component
Including -; And
The beam of photons at a wavelength ranging from about 345 nm to about 1100 nm across the surface of the component to receive the beam of photons from the beam scanner and to form a plurality of features on the component. Lens for dispensing
Containing,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 1,
The lens is configured to distribute the beam of photons horizontally towards the surface of the component,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 1,
The lens is configured to distribute the beam of photons vertically towards the surface of the component,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 1,
The component is positioned between the lens and the support,
The processing zone is maintained in a Class 1 environment, the support surface of the support and the lens are positioned within the Class 1 environment,
The processing zone generally contains a pressure equal to atmospheric pressure,
The system further comprises a conveyor for introducing the component into the Class 1 environment or removing the component from the Class 1 environment,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 1,
The beam scanner is configured to scan the beam of photons across the surface of the component, using a line-by-line pattern or a sparrow pattern,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 1,
The optical module is configured to pulse the beam of photons while scanning the beam of photons across the surface of the component,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 6,
The beam of photons,
A beam diameter in the range of about 7 μm to about 100 μm;
A pulse width in the range of about 10 ps to about 30 ns; And
Pulse repetition rate ranging from about 10 KHz to about 200 KHz
Containing,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 1,
The features formed include depressions, protuberances, or combinations thereof,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. A method of providing a texture to a surface of a component for use in a semiconductor processing chamber, comprising:
Generating a stream of photons;
Shaping the stream of photons into a beam;
Scanning the beam of photons towards the surface of the component through a processing zone containing a gas concentration of ambient air or nitrogen at a pressure generally equivalent to atmospheric pressure; And
Distributing the beam of photons across the surface of the component to form a plurality of features on the surface of the component.
Containing,
A method of providing a texture to a surface of a component for use in a semiconductor processing chamber. The method of claim 9,
Assembling the component and the semiconductor processing chamber, and processing a semiconductor within the semiconductor processing chamber,
A method of providing a texture to a surface of a component for use in a semiconductor processing chamber. The method of claim 9,
Further comprising positioning the component within an enclosure maintained in a Class 1 environment,
The positioning step includes using a conveyor to transport the component into the Class 1 environment,
A method of providing a texture to a surface of a component for use in a semiconductor processing chamber. The method of claim 9,
The distributing comprises distributing the beam of photons horizontally towards the surface of the component,
A method of providing a texture to a surface of a component for use in a semiconductor processing chamber. The method of claim 9,
While scanning the beam of photons across the surface of the component, pulsing the beam of photons,
The beam of photons comprises a wavelength in the range of about 345 nm to about 1100 nm, and the features formed comprise depressions, protrusions, or combinations thereof,
A method of providing a texture to a surface of a component for use in a semiconductor processing chamber. A system for providing texture to a surface of a component for use in a semiconductor processing chamber, comprising:
An enclosure containing a processing area maintained in a Class 1 environment with a pressure generally equivalent to atmospheric pressure;
A support disposed in the processing region and including a support surface;
A photon light source for generating a stream of photons;
An optical module operably coupled to the photon light source to receive the stream of photons from the photon light source, the optical module comprising:
A beam modulator for generating a beam of photons from the stream of photons generated from the photon light source, and
A beam scanner for scanning the beam of photons across the surface of the component
Including -; And
Receiving the beam of photons from the beam scanner, and distributing the beam of photons across the surface of the component at a wavelength ranging from about 345 nm to about 1100 nm to form a plurality of features on the component. To the lens disposed in the processing zone
Containing,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber. The method of claim 14,
The lens is configured to distribute the beam of photons horizontally towards the surface of the component,
A system for providing texture to the surface of a component for use in a semiconductor processing chamber.

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