KR20200129613A - Unit for supporting substrate and Apparatus for treating substrate with the unit - Google Patents

Abstract

An embodiment of the present invention provides a device for supporting a substrate. The device that processes the substrate includes a process chamber having a processing space inside, a substrate support unit supporting the substrate in the processing space, a gas supply unit supplying gas to the substrate support unit, and a plasma source generating plasma from the gas. The substrate support unit includes a dielectric plate provided with an electrode that adsorbs the substrate by electrostatic force therein, a cooling plate positioned below the dielectric plate and having a cooling passage through which a refrigerant flows, an insulating plate positioned under the cooling plate and having a larger diameter than the cooling plate, and a ring assembly surrounding the dielectric plate and the substrate placed on the dielectric plate. The ring assembly includes a focus ring provided to surround the substrate placed on the dielectric plate, a lower ring positioned on the insulating plate and provided to surround the cooling plate, and a clamp ring coupled to the lower ring and clamping the outside of the focus ring.

Description

A substrate support unit and a substrate processing apparatus having the same TECHNICAL FIELD [0002] A unit for supporting substrate and Apparatus for treating substrate with the unit

The present invention relates to an apparatus for supporting a substrate.

In order to manufacture a semiconductor device, various processes such as a photo process, an etching process, an ashing process, an ion implantation process, and a thin film deposition process are performed to form a pattern on a substrate. Among these processes, the etching process, the ion implantation process, and the thin film deposition process plasma-process the substrate in a vacuum atmosphere. This plasma processing apparatus is provided with a ring assembly for concentrating plasma on a substrate.

Typically, the ring assembly is provided to surround the substrate, and is fastened to a chuck on which the substrate is placed. 1 is a cross-sectional view showing a general ring assembly. Referring to FIG. 1, a chuck on which a substrate is placed has a stepped shape, and a ring assembly is positioned in a stepped region of the chuck. The ring assembly includes an inner ring (2), a bolt ring (4), a lower ring (6), and an outer ring (8). The inner ring 2 is located closer to the substrate than the outer ring 8. The lower ring 6 supports the inner ring 2 on the outside of the inner ring 2, and the bolt ring 4 is positioned to press the inner ring 2 from top to bottom so that the inner ring is fixed. When viewed from the top, the bolt ring 4 is positioned so that a part of the bolt ring 4 overlaps the inner ring and the other part overlaps the lower ring 6. The fastening hole is provided to extend from the bolt ring 4 to the lower ring 6, and a bolt is fastened to the fastening hole. Accordingly, the inner ring 2, the bolt ring 4, and the lower ring 6 may be fixedly coupled to each other. The outer ring 8 is provided so as to surround the area where the bolt ring 4 and the lower ring 6 are exposed to plasma.

However, the bolt ring 4 and the bolt are essential components for fixing the inner ring 2 and the lower ring 6, and the volume of the outer ring 8 is reduced by the volume of the bolt ring 4. For this reason, it is difficult to increase the thickness h of the outer ring 8 facing the bolt ring 2 beyond a certain thickness, and frequent maintenance must be performed due to etching due to plasma.

An object of the present invention is to provide a device capable of improving the durability of a plasma device.

Another object of the present invention is to provide a plasma device having a novel structure.

An embodiment of the present invention provides an apparatus for supporting a substrate. The apparatus for processing a substrate includes a process chamber having a processing space therein, a substrate supporting unit supporting a substrate in the processing space, a gas supply unit supplying gas to the substrate supporting unit, and a plasma source generating plasma from the gas. Including, wherein the substrate support unit, a dielectric plate provided with an electrode for adsorbing a substrate by electrostatic force therein, a cooling plate located under the dielectric plate and having a cooling passage through which a refrigerant flows, and a lower portion of the cooling plate An insulating plate having a diameter larger than that of the cooling plate, and a ring assembly surrounding the dielectric plate and a substrate placed on the dielectric plate, wherein the ring assembly is provided to surround the substrate placed on the dielectric plate. And a ring, a lower ring positioned on the insulating plate and provided to surround the cooling plate, and a clamp ring coupled to the lower ring and clamping the outside of the focus ring.

The focus ring may include a first ring having a groove formed on an outer circumferential surface thereof, and a second ring positioned below the first ring, and the clamp ring may clamp the groove and a bottom surface of the second ring.

The clamp ring includes an upper body inserted into the groove, a lower body supporting a bottom surface of the second ring, and a connection body connecting the upper body and the lower surface to each other, wherein the connection body comprises the upper body and the The lower body can be brought into close contact with each other. The connection body may include a guide for guiding the movement direction of the upper body and the lower body, and an elastic member providing adhesion to the upper body and the lower body. The guide may have an upper end coupled to the upper body, a lower end coupled to the lower body, and a length connecting the upper end and the lower end may be variable. The guide includes a first part having the upper end and a second part having the lower end, wherein one of the first part and the second part is provided to be movable along the length direction while a part is inserted into the other Can be,

The ring assembly may further include a locking ring that is inserted into a fixing groove formed on an upper surface of the lower ring from the outside of the clamp ring, and restricts movement of the clamp ring.

The ring assembly further includes a protection member for protecting the lower ring, the locking ring, and the clamp ring from plasma in the processing space, the protection member

The insulating member may further include an insulating ring surrounding an outer circumferential surface of the lower ring and a pressing ring fastened to the insulating ring, and surrounding a surface where the locking ring and the clamp ring are exposed to the processing space.

The pressing ring may be pressed in a direction from the top of the locking ring toward the upper surface of the locking ring to fix the locking ring.

The pressing ring may be provided with an insulating material,

In addition, the device for supporting the substrate includes a dielectric plate provided with an electrode for adsorbing the substrate by electrostatic force therein, a cooling plate having a cooling path through which a refrigerant flows, and a cooling plate provided below the dielectric plate. , An insulating plate having a diameter larger than that of the cooling plate, and a ring assembly surrounding the dielectric plate and a substrate placed on the dielectric plate, wherein the ring assembly is provided to surround a substrate placed on the dielectric plate, the And a lower ring disposed on the insulating plate and provided to surround the cooling plate, and a clamp ring coupled to the lower ring and clamping the outside of the focus ring.

The focus ring includes a first ring having a groove formed on an outer circumferential surface thereof, and a second ring positioned below the first ring, wherein the clamp ring may clamp the groove and a bottom surface of the second ring.

The clamp ring may include an upper body inserted into the groove, a lower body supporting a bottom surface of the second ring, and an elastic member providing a close contact force between the upper body and the lower body.

According to an embodiment of the present invention, the focus ring is clamped and fixed. This makes it possible to stably fasten the focus ring without a separate screw.

In addition, according to the embodiment of the present invention, since it is possible to fasten the focus ring without screws, the thickness of the pressing ring can be increased, and durability of the pressing ring can be improved.

In addition, according to an embodiment of the present invention, the clamp ring may be fixedly coupled to the lower ring while at the same time being in close contact with the first ring and the second ring through the elastic member.

1 is a cross-sectional view showing a general ring assembly.
2 is a plan view schematically showing a substrate processing facility according to an embodiment of the present invention.
3 is a cross-sectional view of the substrate processing apparatus of FIG. 2.
4 is a cross-sectional view showing an enlarged view of the ring assembly of FIG. 3.
5 is a cross-sectional view showing the clamp ring of FIG. 4.
6 is an exploded perspective view showing the clamp ring of FIG. 5.

In an embodiment of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the present invention is not limited thereto, and can be applied to various types of devices for processing a substrate using gas.

2 is a plan view schematically showing a substrate processing facility according to an embodiment of the present invention.

Referring to FIG. 2, the substrate processing facility 1 includes an index module 10, a loading module 30, and a process module 20. The index module 10 has a load port 120, a transfer frame 140, and a buffer unit 300. The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. Hereinafter, the direction in which the load port 120, the transfer frame 140, the loading module 30, and the process module 20 are arranged is referred to as the first direction 12, and when viewed from the top, the first direction ( A direction perpendicular to 12) is referred to as a second direction 14, and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

A carrier 18 in which a plurality of substrates W are accommodated is mounted on the load port 120. A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14. In Figure 2, it is shown that three load ports 120 are provided. However, the number of load ports 120 may increase or decrease according to conditions such as process efficiency and footprint of the process module 20. The carrier 18 is formed with a slot (not shown) provided to support the edge of the substrate. A plurality of slots are provided along the third direction 16, and the substrates are positioned in the carrier to be stacked in a state spaced apart from each other along the third direction 16. As the carrier 18, a Front Opening Unified Pod (FOUP) may be used.

The transfer frame 140 transfers the substrate W between the carrier 18 seated on the load port 120, the buffer unit 300, and the loading module 30. The transport frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided in its longitudinal direction parallel to the second direction 14. The index robot 144 is installed on the index rail 142 and moves linearly in the second direction 14 along the index rail 142. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. In addition, the body (144b) is provided to be rotatable on the base (144a). The index arm 144c is coupled to the body 144b, and is provided to move forward and backward with respect to the body 144b. A plurality of index arms 144c are provided to be individually driven. The index arms 144c are disposed to be stacked apart from each other along the third direction 16. Some of the index arms 144c are used when transferring the substrate W from the process module 20 to the carrier 18, and others transfer the substrate W from the carrier 18 to the process module 20. Can be used when doing. This may prevent particles generated from the substrate W before the process treatment from adhering to the substrate W after the process treatment during the process of the index robot 144 carrying in and carrying out the substrate W.

The buffer unit 300 temporarily stores the substrate W processed by the process module 20. The buffer unit 300 removes process by-products remaining on the substrate W. Removal of process by-products from the buffer unit 300 is performed by pressurizing or depressurizing the inside of the buffer unit 300. The buffer unit 300 may be provided in plural. For example, two buffer units 300 may be provided. The two buffer units 300 are provided on both sides of the transfer frame 140, respectively, and may be positioned to face each other with the transfer frame 140 interposed therebetween. Optionally, only one buffer unit 300 may be provided on one side of the transfer frame 140.

The loading module 30 is disposed between the transfer frame 140 and the transfer chamber 242. The loading module 30 provides a space in which the substrate W stays between the transfer chamber 242 and the transfer frame 140 before the substrate W is transferred. The loading module 30 includes a plurality of load lock chambers 32 and 34. Each of the load lock chambers 32 and 34 is provided so that the interior thereof is switchable between a vacuum atmosphere and an atmospheric pressure atmosphere.

In the load lock chambers 32 and 34, the substrate W transferred between the index module 10 and the process module 20 temporarily stays. When the substrate W is carried into the load lock chambers 32 and 34, the inner space is sealed with respect to the index module 10 and the process module 20, respectively. Thereafter, the inner space of the load lock chamber 32 is converted to an atmospheric or vacuum atmosphere, and the index module 10 and the process module 20 are opened to the other while the sealing is maintained.

For example, when the substrate is transferred from the index module 10 to the process module 20, the load lock chambers 32 and 34 change the internal space from the atmospheric pressure atmosphere to the vacuum atmosphere, and then seal it against the index module 10. It may be opened to the process module 20 while maintaining the.

Conversely, when the substrate is transferred from the process module 20 to the index module 10, the load lock chambers 32 and 34 convert the internal space from a vacuum atmosphere to an atmospheric pressure atmosphere, and then the process module 20 It may be opened with respect to the index module 10 while maintaining the sealing.

Optionally, one of the load lock chambers 32 and 34 is used when the substrate is transferred from the index module 10 to the process module 20, and the other is the substrate from the process module 20 to the index module 10. Can be used when returned to

The process module 20 includes a transfer chamber 242 and a plurality of process units 260.

The transfer chamber 242 transfers the substrate W between the load lock chambers 32 and 34 and the plurality of process units 260. The transfer chamber 242 may be provided in a hexagonal shape when viewed from the top. Optionally, the transfer chamber 242 may be provided in a rectangular or pentagonal shape. Load lock chambers 32 and 34 and a plurality of process units 260 are positioned around the transfer chamber 242. A transfer robot 250 is provided in the transfer chamber 242. The transfer robot 250 may be located in the center of the transfer chamber 242. The transfer robot 250 may move in a horizontal or vertical direction, and may have a plurality of hands 252 capable of moving forward, backward, or rotating on a horizontal plane. Each hand 252 may be independently driven, and the substrate W may be mounted on the hand 252 in a horizontal state.

The process unit 260 below will be described as a substrate processing apparatus 1000 that processes a substrate by gas. The substrate processing apparatus etching or depositing the substrate W. According to an example, each of the substrate processing apparatuses may process a substrate with different types of gases. The gas used in the gas treatment process may be methane (CH ₄ ).

3 is a cross-sectional view of the substrate processing apparatus of FIG. 2. Referring to FIG. 3, the substrate processing apparatus 1000 includes a chamber 1100, a substrate support unit 1200, a gas supply unit 1300, a plasma source 1400, and an exhaust baffle 1500.

The chamber 1100 has a processing space 1106 in which the substrate W is processed. The chamber 1100 is provided in a circular cylindrical shape. The chamber 1100 is made of a metal material. For example, the chamber 1100 may be made of aluminum. An opening is formed in one side wall of the chamber 1100. The opening functions as an inlet through which the substrate W is carried. The opening is opened and closed by the door 1120. A lower hole 1150 is formed in the bottom surface of the chamber 1100. A pressure reducing member (not shown) is connected to the lower hole 1150. The processing space 1106 of the chamber 1100 can be exhausted by a decompression member, and can be maintained in a decompression atmosphere during the process.

The substrate support unit 1200 supports the substrate W in the processing space 1106. The substrate support unit 1200 may be provided as an electrostatic chuck 1200 supporting the substrate W using electrostatic force. Optionally, the substrate support unit 1200 may support the substrate W in various ways such as mechanical clamping.

The electrostatic chuck 1200 includes a dielectric plate 1210, a cooling plate 1220, an insulating plate 1230, and a ring assembly 1250. The dielectric plate 1210 may be made of a dielectric material. The substrate W is directly placed on the upper surface of the dielectric plate 1210. The dielectric plate 1210 is provided in a disk shape. The dielectric plate 1210 may have a radius smaller than that of the substrate W. The chucking electrode 1212 is installed inside the dielectric plate 1210. A power source (not shown) is connected to the chucking electrode 1212, power is applied from a power source (not shown), and the substrate W is adsorbed to the dielectric plate 1210 by electrostatic force. A heater 1214 for heating the substrate W is installed inside the dielectric plate 1210. The heater 1214 is located under the chucking electrode 1212. The heater 1214 may be provided as a spiral coil.

The cooling plate 1220 controls the temperature of the substrate W placed on the dielectric plate 1210. The cooling plate is located under the dielectric plate. The cooling plate 1220 serves to lower the temperature of the dielectric plate 1210 and the substrate W placed thereon. The cooling plate 1220 may lower the temperature of the substrate W overheated by the heater 1214. A cooling passage 1222 is formed inside the cooling plate 1220. The cooling passage 1222 is provided as a passage through which the cooling fluid circulates. The cooling passage 1222 may be provided in a spiral shape inside the cooling plate. The cooling plate 1220 is provided in a plate shape having a diameter larger than that of the dielectric plate 1210. The cooling plate 1220 may be positioned to have a concentric circle with the dielectric plate 1210.

The insulating plate 1230 is located under the cooling plate 1220. The insulating plate 1230 supports the cooling plate 1220 and the dielectric plate 1210. The insulating plate 1230 has a plate shape having a larger diameter than the cooling plate 1220. Accordingly, the dielectric plate 1210, the cooling plate 1220, and the insulating plate 1230 may be combined to have a cylindrical shape with a side portion stepped multiple times. The insulating plate 1230 may be made of an insulating material.

The ring assembly 2000 concentrates the plasma onto the substrate W placed on the dielectric plate 1210. 4 is a cross-sectional view showing an enlarged view of the ring assembly of FIG. 3. Referring to FIG. 4, the ring assembly 2000 includes a focus ring 2100, a lower ring 2200, a clamp ring 2300, a locking ring 2400, and a protection member 2500. The focus ring 2100 is provided in a ring shape surrounding the substrate W placed on the dielectric plate 1210. The focus ring 2100 serves to guide a movement path of the substrate W so that plasma formed in the processing space is transmitted to the substrate W. The focus ring 2100 includes a first ring 2120 and a second ring 2140. The first ring 2120 is positioned at a height corresponding to the substrate W, and the second ring 2140 is placed on the cooling plate 1220. The first ring 2120 is positioned to face the second ring 2140 in the vertical direction. That is, the first ring 2120 and the second ring 2140 are positioned to overlap each other. The first ring 2120 has an upper surface having a different height for each area. The inner side of the upper surface of the first ring 2120 has a lower height than the outer side of the upper surface. The inside of the upper surface of the first ring 2120 is provided to have the same height as the dielectric plate 1210. Accordingly, the inner portion of the upper surface of the first ring 2120 may support the side end of the substrate W. An outer upper surface of the first ring 2120 may be provided to have a height equal to or higher than the substrate W placed on the dielectric plate 1210. A groove 2122 is formed on the outer circumferential surface of the first ring 2120. The groove 2122 may be provided as a region clamped by a clamp ring 2300 to be described later. Each of the first ring 2120 and the second ring 2140 has an outer diameter that is larger than the cooling plate 1220 and smaller than the insulating plate 1230. That is, side ends of each of the first ring 2120 and the second ring 2140 may be positioned to face the insulating plate 1230 except the cooling plate 1220 when viewed from the top.

The lower ring 2200 is provided on the insulating plate 1230 to surround the cooling plate 1220. The lower ring 2200 is fixedly coupled to the insulating plate 1230. The lower ring 2200 may perform a function of supporting them under each of the focus ring 2100, the clamp ring 2300, and the locking ring 2400. The lower ring 2200 may have a slightly smaller outer diameter than the insulating plate 1230. A fixing groove into which the locking ring 2400 is inserted is formed on the upper surface of the lower ring 2200.

The clamp ring 2300 fixes the position of the focus ring 2100. The clamp ring 2300 is coupled to the upper surface of the lower ring 2200 and clamps the focus ring 2100 from the outside of the focus ring 2100. The clamp ring 2300 is provided in plural, and may be arranged on the lower ring 2200 to be spaced apart from each other along the length direction of the lower ring 2200. Optionally, one clamp ring 2300 may be provided. When viewed from the top, the clamp ring 2300 is located inside the fixing groove. 5 is a cross-sectional view illustrating the clamp ring of FIG. 4, and FIG. 6 is an exploded perspective view illustrating the clamp ring of FIG. 5. 5 and 6, the clamp ring 2300 includes an upper body 2320, a lower body 2340, and a connection body 2360. The upper body 2320 has a shape in which an upper region protrudes longer in an inward direction than a lower region. The upper body 2320 is provided as a region for clamping the first ring 2120 in the clamping ring. The protrusion 2322 of the upper body 2320 is positioned to be inserted into the groove 2122 formed on the outer peripheral surface of the first ring 2120. The protrusion 2322 extends in a direction inclined upward as the bottom surface goes inward. Accordingly, while the focus ring 2100 is clamped by the upper body 2320, a force pressed in the inward direction may be transmitted to the focus ring 2100.

The lower body 2340 is located under the upper body 2320. The lower body 2340 has a shape in which the lower region protrudes longer in the inward direction than the upper region. The lower body 2340 is provided as a region clamping the second ring 2140 in the clamping ring 2300. The protrusion 2342 of the lower body 2340 is positioned to support the bottom surface of the second ring 2140. The surface on which the protrusion 2342 of the lower body 2340 supports the second ring 2140 extends in the horizontal direction. Connection grooves 2324 and 2344 are formed on one surface of the upper body 2320 and the lower body 2340 facing each other. The connection grooves 2324 and 2344 are provided as a space in which the connection body 2360 is inserted. The connection grooves 2324 and 2344 may be formed on a bottom surface of the upper body 2320 and an upper surface of the lower body 2340, respectively. According to an example, the clamp ring 2300 may be fastened to the upper surface of the lower ring 2200 while the focus ring 2100 is clamped.

The connection body 2360 connects the upper body 2320 and the lower body 2340 to each other. The connection body 2360 includes a guide 2370 and an elastic member 2380. The guide 2370 guides the movement direction between the upper body 2320 and the lower body 2340. The guide 2370 is provided so that both ends are connected to the upper body 2320 and the lower body 2340. The guide 2370 is provided to have a variable length connecting both ends. According to an example, the guide 2370 may have a first portion 2372 and a second portion 2374. The first portion 2372 may be an area including an upper end coupled to the upper body 2320, and the second portion 2374 may be an area including a lower end coupled to the lower body 2340. That is, an upper end of the first part 2372 may be located in a connection groove of the upper body 2320, and a lower end of the second part 2374 may be located in a connection groove of the lower body 2340. The first portion 2372 may be positioned higher than the second portion 2374. One of the first portion 2372 and the second portion 2374 may be positioned to be inserted into the other. The first portion 2372 may be moved in the vertical direction while the area excluding the upper part and the second part 2374 is inserted into the other area.

The elastic member 2380 provides elastic force between the upper body 2320 and the lower body 2340. The elastic member 2380 provides adhesion in a direction in which the upper body 2320 and the lower body 2340 are close to each other. The elastic member 2380 may be positioned in the connection grooves 2324 and 2344, and the upper end may be coupled to the upper body 2320, and the lower end may be coupled to the lower body 2340. For example, the elastic member 2380 may be a spring.

Referring back to FIG. 4, the locking ring 2400 limits the movement of the clamp ring 2300. The locking ring 2400 is positioned to be inserted into a fixing groove formed in the lower ring 2200. The locking ring 2400 is inserted into the fixing groove, so that the locking ring 2400 and the clamp ring 2300 are fixed by a force fitting method. As a result, it is possible to prevent the focus ring 2100 and the clamp ring 2300 from being separated from each other.

The protection member 2500 protects some components of the ring assembly 2000 from plasma provided in the processing space 1106. The protection member 2500 prevents the lower ring 2200, the locking ring 2400, and the clamp ring 2300 from being exposed to plasma. The protection member 2500 may be provided with an insulating material. The protection member 2500 includes an insulating ring 2520 and a pressing ring 2540. The insulating ring 2520 is provided to surround the outer peripheral surface of the lower ring 2200. Accordingly, it is possible to prevent the outer peripheral surface of the lower ring 2200 from being exposed to plasma. The pressing ring 2540 is coupled to the upper surface of the insulating ring 2520 and has an upper surface having a height slightly higher than that of the focus ring 2100. The pressing ring 2540 is provided to surround the exposed surface of the locking ring 2400 and the exposed surface of the clamp ring 2300. Accordingly, it is possible to prevent the locking ring 2400 and the clamp ring 2300 from being exposed to plasma. In addition, the pressing ring 2540 is coupled to the insulating ring 2520 and presses the locking ring 2400 and the clamp ring 2300 in a top-down direction, and presses the focus ring 2100 in an inward direction. Accordingly, it is possible to secondly prevent the positions of the focus ring 2100 and the clamp ring 2300 from being separated. For example, the pressing ring 2540 may be made of a quartz material.

According to an embodiment of the present invention, the focus ring 2100 and the locking ring 2400 are screwlessly fastened by a forced fitting method. Accordingly, a space in which the screw is located and a hole in which the screw is to be fastened are unnecessary, and the thickness H of the pressing ring 2540 facing the locking ring 2400 and the clamp ring 2300 may be increased. Accordingly, even if the pressing ring 2540 is etched and damaged by plasma, its life is increased by the increased thickness H, and the frequency of maintenance can be reduced.

Referring back to FIG. 3, the gas supply unit 1300 supplies a process gas onto the substrate W supported by the substrate support unit 1200. The gas supply unit 1300 includes a gas storage unit 1350, a gas supply line 1330, and a gas inlet port 1310. The gas supply line 1330 connects the gas storage unit 1350 and the gas inlet port 1310. The process gas stored in the gas storage unit 1350 is supplied to the gas inlet port 1310 through the gas supply line 1330. The gas inlet port 1310 is installed on the upper wall of the chamber 1100. The gas inlet port 1310 is positioned to face the substrate support unit 1200. According to an example, the gas inlet port 1310 may be installed at the center of the upper wall of the chamber 1100. A valve is installed in the gas supply line 1330 to open and close the inner passage or to adjust the flow rate of gas flowing through the inner passage. For example, the process gas may be an etching gas.

The plasma source 1400 excites the process gas in the chamber 1100 into a plasma state. As the plasma source 1400, an inductively coupled plasma (ICP) source may be used. The plasma source 1400 includes an antenna 1410 and an external power supply 1430. The antenna 1410 is disposed on the outside of the chamber 1100. The antenna 1410 is provided in a spiral shape that is wound a plurality of times, and is connected to an external power supply 1430. The antenna 1410 receives power from an external power supply 1430. The antenna 1410 to which power is applied forms a discharge space in the inner space of the chamber 1100. The process gas remaining in the discharge space may be excited in a plasma state.

The exhaust baffle 1500 uniformly exhausts the plasma for each area in the processing space 1106. The exhaust baffle 1500 has an annular ring shape. The exhaust baffle 1500 is located between the inner wall of the chamber 1100 and the substrate support unit 1200 in the processing space 1106. A plurality of exhaust holes 1502 are formed in the exhaust baffle 1500. The exhaust holes 1502 are provided to face the vertical direction. The exhaust holes 1502 are provided as holes extending from the top to the bottom of the exhaust baffle 1500. The exhaust holes 1502 are arranged to be spaced apart from each other along the circumferential direction of the exhaust baffle 1500. Each of the exhaust holes 1502 has a slit shape and has a longitudinal direction in a radial direction.

2000: ring assembly 2100: focus ring
2200: lower ring 2300: clamp ring
2400: locking ring 2500: protection member

Claims (13)

In the apparatus for processing a substrate,
A process chamber having a processing space therein;
A substrate support unit supporting a substrate in the processing space;
A gas supply unit supplying gas to the substrate support unit;
Including a plasma source for generating plasma from the gas,
The substrate support unit,
A dielectric plate provided with an electrode for adsorbing the substrate by electrostatic force therein;
A cooling plate positioned below the dielectric plate and having a cooling passage through which a refrigerant flows;
An insulating plate positioned below the cooling plate and having a larger diameter than the cooling plate;
Including a ring assembly surrounding the dielectric plate and a substrate placed on the dielectric plate,
The ring assembly,
A focus ring provided to surround a substrate placed on the dielectric plate;
A lower ring positioned on the insulating plate and provided to surround the cooling plate;
A substrate processing apparatus comprising a clamp ring coupled to the lower ring and clamping an outer side of the focus ring. The method of claim 1,
The focus ring,
A first ring having a groove formed on the outer circumferential surface;
Including a second ring located below the first ring,
The clamp ring clamps the groove and the bottom surface of the second ring. The method of claim 2,
The clamp ring,
An upper body inserted into the groove;
A lower body supporting the bottom surface of the second ring;
Including a connection body connecting the upper body and the lower portion to each other,
The connection body is a substrate processing apparatus for bringing the upper body and the lower body into close contact with each other. The method of claim 3,
The connection body,
A guide for guiding a movement direction of the upper body and the lower body;
A substrate processing apparatus comprising an elastic member that provides adhesion to the upper body and the lower body. The method of claim 4,
The guide has an upper end coupled to the upper body, a lower end coupled to the lower body, and a length connecting the upper end and the lower end is variable. The method of claim 5,
The guide includes a first part having the upper end and a second part having the lower end, wherein one of the first part and the second part is provided to be movable along the length direction while a part is inserted into the other Substrate processing apparatus. The method according to any one of claims 2 to 6,
The ring assembly,
A substrate processing apparatus further comprising a locking ring that is inserted into a fixing groove formed on an upper surface of the lower ring from the outside of the clamp ring, and restricts movement of the clamp ring. The method of claim 7,
The ring assembly,
Further comprising a protection member for protecting the lower ring, the locking ring, and the clamp ring from plasma in the processing space,
The protective member is
The insulating member includes an insulating ring surrounding an outer peripheral surface of the lower ring;
A substrate processing apparatus further comprising a pressing ring fastened to the insulating ring and surrounding a surface where the locking ring and the clamp ring are exposed to the processing space. The method of claim 8,
The substrate processing apparatus for fixing the locking ring by pressing the pressing ring in a direction from above the locking ring toward an upper surface of the locking ring. The method of claim 9,
The press ring is a substrate processing apparatus provided with an insulating material. In the apparatus for supporting a substrate,
A dielectric plate provided with an electrode for adsorbing the substrate by electrostatic force therein;
A cooling plate positioned below the dielectric plate and having a cooling passage through which a refrigerant flows;
An insulating plate positioned below the cooling plate and having a larger diameter than the cooling plate;
Including a ring assembly surrounding the dielectric plate and a substrate placed on the dielectric plate,
The ring assembly,
A focus ring provided to surround a substrate placed on the dielectric plate;
A lower ring positioned on the insulating plate and provided to surround the cooling plate;
A substrate support unit including a clamp ring coupled to the lower ring and clamping an outer side of the focus ring. The method of claim 11,
The focus ring,
A first ring having a groove formed on the outer circumferential surface;
Including a second ring located below the first ring,
The clamp ring is a substrate support unit for clamping the groove and the bottom surface of the second ring. The method of claim 12,
The clamp ring,
An upper body inserted into the groove;
A lower body supporting the bottom surface of the second ring;
A substrate support unit comprising an elastic member providing an adhesive force for bringing the upper body and the lower body into close contact with each other.

Images