KR20200125419A - Display apparatus and manufacturing method thereof - Google Patents

Abstract

According to embodiments of the present invention, a display apparatus comprises a first substrate and a display unit. The display unit includes a display area and a penetration area. The display unit includes: an auxiliary layer placed corresponding to the penetration area; a second electrode placed corresponding to at least a part of the display area and the penetration area; and a second electrode placed corresponding to only the display area. The auxiliary layer includes a first material. The second electrode includes a second material. The first material and the second material satisfy formula 1, ST2 -ST1 > 0 mJ/m^2, in which ST1 is the surface energy of the first material at 25°C, and ST2 is the surface energy of the second material at 25°C. According to the present invention, the display apparatus has a relatively high penetration rate.

Description

TECHNICAL FIELD The display apparatus and manufacturing method thereof

Embodiments of the present invention relate to a display device, specifically a display device having a transmissive region, and a method of manufacturing the same.

In recent years, the use of display devices has been diversified. In addition, since the thickness of the display device is thinner and the weight is light, the range of use thereof is becoming wider.

As an example, research to implement transparency or transparency in a display device is ongoing. Specifically, there is an attempt to form a transparent display device by making a thin film transistor or a display panel inside the device in a transparent form.

In order to implement a transparent display device, it is necessary to optimize various variables such as composition, arrangement, and thickness of various materials such as a substrate, an electrode, an insulating film, and a capping film. For example, in the case of an organic light emitting diode display, a plurality of conductive layers and insulating layers including different materials are stacked, and as a result, optical properties are deteriorated, so it may not be easy to obtain desired transmittance or transparency.

As a display device having a high transmittance of external light and a method of manufacturing the same, embodiments of the present invention can provide a display device in which a common electrode is not substantially formed in a transmission region.

The technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems that are not mentioned will be clearly understood by those of ordinary skill in the art from the description of the present invention. .

A display device according to an embodiment of the present invention includes: a first substrate; And a display unit; And

The display unit includes a display area and a transmissive area;

The display unit may include an auxiliary layer disposed to correspond to the transmissive area; And a second electrode disposed to correspond only to the display area,

The auxiliary layer comprises a first material,

The second electrode comprises a second material,

The first material and the second material satisfy Equation 1 below:

<Equation 1>

ST2 -ST1> 0 mJ/m ²

In Equation 1 above,

ST1 is the surface energy of the first material at 25°C;

ST2 is the surface energy of the second material at 25°C.

In the above embodiment, the second electrode may be absent in the transmissive region. In the above embodiment, ST1 may be greater than 0 mJ/m ² to 30 mJ/m ² or less.

In the above embodiment, the first material may contain 20 at% or more of fluorine.

In the above embodiment, the first material may include a fluorine-containing silane compound, a fluorine-based polymer compound, and a combination thereof.

In the above embodiment, the second material may include magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), and combinations thereof.

A display device according to another embodiment of the present invention includes: a first substrate; And a display unit; And

The display unit includes a display area and a transmissive area;

The display unit may include an auxiliary layer disposed to correspond to the transmission area; And a second electrode disposed to correspond to at least a portion of the display area and the transmissive area; and

The auxiliary layer comprises a first material,

The second electrode comprises a second material,

The first material and the second material satisfy Equation 1 below:

<Equation 1>

ST2 -ST1> 0 mJ/m ²

In Equation 1 above,

ST1 is the surface energy of the first material at 25°C;

ST2 is the surface energy of the second material at 25°C.

In the above embodiment, the second electrode is disposed to correspond to all of the display area and the transparent area,

A first portion of the second electrode is disposed corresponding to the display area,

A second portion of the second electrode is disposed corresponding to the transparent region,

The thickness of the first portion (T ₁ ) and the thickness of the second portion (T ₂ ) may satisfy Equation 2:

<Equation 2>

T ₁ > T ₂ .

In the above embodiment, T ₂ may be greater than 0 nm to 1 nm or less.

In the above embodiment, the second electrode is disposed corresponding to the display area and a part of the transparent area,

A portion of the second electrode disposed to correspond to a portion of the transmissive region may be made of a plurality of particles including the second material.

In the above embodiment, a thickness of a portion of the second electrode disposed corresponding to the display area may be greater than an average diameter of the plurality of particles.

In the above embodiment, ST1 may be greater than 0 mJ/m ² to less than 30 mJ/m ² .

In the above embodiment, the first material may contain 20 at% or more of fluorine.

In the above embodiment, the first material may include a fluorine-containing silane compound, a fluorine-based polymer compound, and a combination thereof.

In the above embodiment, the second material may include magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), and combinations thereof.

In the above embodiment, the display device further includes a first electrode and an intermediate layer,

The intermediate layer may be interposed between the first electrode and the second electrode.

A method of manufacturing a display device according to an embodiment of the present invention includes: providing a first substrate; And

Providing a display unit including a display area and a transmissive area on the first substrate; Includes;

Providing the display unit may include providing an auxiliary layer only in the transmissive area; And providing a second electrode on the display area or on the display area and the transparent area; and

The auxiliary layer comprises a first material,

The second electrode comprises a second material,

The first material and the second material satisfy Equation 1 below:

<Equation 1>

ST2 -ST1> 0 mJ/m ²

In Equation 1 above,

ST1 is the surface energy of the first material at 25°C;

ST2 is the surface energy of the second material at 25°C.

In the above embodiment, the second electrode may be provided by depositing the second material using an open mask.

In the above embodiment, the display device further includes a first electrode and an intermediate layer,

After providing an intermediate layer on the first electrode,

Providing an auxiliary layer only in the transmissive region,

A second electrode may be provided on the intermediate layer or on the intermediate layer and the auxiliary layer.

In the above embodiment, the display device further includes a first electrode and an intermediate layer,

After providing an auxiliary layer only in the transmissive region,

An intermediate layer may be provided on the first electrode, and a second electrode may be provided on the intermediate layer or on the intermediate layer and the auxiliary layer.

According to various embodiments of the present disclosure, since a common electrode is not substantially formed in a transmissive region, a display device having a relatively high transmittance and a method of manufacturing the same can be provided.

However, the above-described effects are exemplary, and the effects according to the embodiments will be described in detail through the following description.

1 is a schematic structural diagram of a display device according to an exemplary embodiment of the present invention.
2 and 3 are cross-sectional and plan views schematically illustrating a display device according to an exemplary embodiment of the present invention.
4 is a schematic cross-sectional view illustrating a display device according to another exemplary embodiment of the display device of FIG. 2.
5 is a cross-sectional view illustrating the display unit of FIG. 4 in more detail.
6 and 7 are cross-sectional and plan views schematically illustrating a display device according to another exemplary embodiment of the present invention.
8 is a schematic cross-sectional view of a display device according to another exemplary embodiment of the display device of FIG. 6.
9 to 14 are cross-sectional views illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.
15 and 16 are cross-sectional views illustrating a method of manufacturing a display device according to another exemplary embodiment of the present invention.
17 is a block diagram schematically illustrating a configuration of an electronic device according to an embodiment of the present invention.
18A and 18B are perspective views schematically illustrating an electronic device according to an embodiment of the present invention.
19 is a graph showing transmittance graphs according to wavelengths of Example 1 and Comparative Examples 1 and 2;
20 is a view showing a transmittance graph according to wavelength of Example 2 and Comparative Example 3.
21A is a transmission electron microscope (TEM) image of Example 2, and FIG. 21B is a TEM image of Comparative Example 3. 21C is a partially enlarged view of FIG. 21A.

Since the present invention can apply various transformations and have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them will be apparent with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding components are assigned the same reference numerals, and redundant descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are not used in a limiting meaning, but are used for the purpose of distinguishing one component from another component.

In the following examples, the singular expression includes the plural expression unless the context clearly indicates otherwise.

In the following embodiments, terms such as include or have means that the features or elements described in the specification are present, and do not preclude the possibility of adding one or more other features or elements in advance.

In the following embodiments, when a part such as a film, a region, or a component is on or on another part, not only the case directly above the other part, but also another film, region, component, etc. are interposed therebetween. This includes cases where there is.

In the drawings, components may be exaggerated or reduced in size for convenience of description. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, and the present invention is not necessarily limited to what is shown.

When a certain embodiment can be implemented differently, a specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the described order.

In the following embodiments, when a film, a region, a component, etc. are connected, not only the film, the region, and the components are directly connected, but other films, regions, and components are interposed between the film, the region, and the components. It includes cases that are connected indirectly. For example, in this specification, when a film, region, component, etc. are electrically connected, not only the film, region, component, etc. are directly electrically connected, but also other films, regions, components, etc. are interposed therebetween. This includes indirect electrical connections.

1 is a schematic cross-sectional view of a display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1, a display device 1 according to an embodiment of the present invention includes a first substrate 10 and a display unit 20. The display unit 20 may include a display area 100 in which an image is implemented and a transmission area 200 through which external light is transmitted. In the display device 1, external light is incident through the first substrate 10 and the display unit 20.

In the display unit 20, an image is implemented through the display area 100, and external light is transmitted through the transmission area 200. The user U can see an external image through the transparent region 200. That is, the display device 1 may be implemented as a display in which the transmittance of the display area 100 and the transmittance of the transmission area 200 are different.

As an embodiment, a top emission type display device in which the user U located on the side where the image is implemented can observe an image outside the first substrate 10 is described as an example, but the display device of the present invention is Not limited. As another embodiment, it may be a rear light emitting type implemented in a direction from the display unit 20 to the first substrate 10.

By not disposing a thin film transistor or a capacitor in the transmissive region 200, the transmittance of external light in the transmissive region 200 can be increased. As a result, the transmittance of external light of the display device can be increased. Thus, it is possible to prevent distortion from occurring due to interference.

The display device 1 may further include a second substrate 30 facing the first substrate 10. In this case, the display unit 20 may be interposed between the first substrate 10 and the second substrate 30.

The second substrate 30 is formed of a transparent glass or plastic substrate so that an image from the display unit 20 can be realized, and blocks outside air and moisture from penetrating into the display unit 20. The edges of the first substrate 10 and the second substrate 30 are coupled by a sealing material so that a space between the first substrate 10 and the second substrate 30 may be sealed. A desiccant or filler may be located in the space. Alternatively, it may be sealed by forming the second substrate 30 of a thin film on the first substrate 10 and the display unit 20. In this case, both the first substrate 10 and the second substrate 30 may be provided to be flexible.

Hereinafter, as the display device 1 according to an embodiment of the present invention, an organic light emitting display device will be described as an example, but the display device of the present invention is not limited thereto. As another embodiment, various types of display devices such as an inorganic EL display device, a quantum dot light emitting display device, and the like may be used.

2 and 3 are cross-sectional and plan views schematically illustrating a display device 1A according to an exemplary embodiment of the present invention. Specifically, FIG. 3 is a plan view showing first pixels PX1 adjacent to each other, for example, a first red pixel Pr, a first green pixel Pg, and a first blue pixel Pb, 2 is a cross-sectional view taken along line A-A' of FIG. 3.

Referring to FIG. 2, the display unit 20 may include a display area 100 in which an image is implemented and a transmission area 200 adjacent thereto through which external light is transmitted. Here, the external light is external light that is distinguished from the light emitted by the light emitting element EL1 of the first pixel PX1. The external light may be ambient light or light emitted by other electronic devices.

In the transmissive region 200, a device including an opaque material is not disposed, only a substantially transparent auxiliary layer, an insulating layer, etc. may be disposed, and an image outside the display device 1A may be transmitted as it is.

The first external light 61 and the second external light 62 may pass through the transmission region 200. The first external light 61 is external light transmitted from the outside of the display unit 20 to the outside of the first substrate 10. The second external light 62 is external light transmitted from the outside of the first substrate 10 to the outside of the display unit 20. Devices and wirings may not be arranged in the transparent region 200 because the devices and wirings are disposed bypassing the transparent region 200. At least the fourth insulating layer 15 may not be provided in the transmission region 200. The insulating layer 14 disposed in the transmissive region 200 may include a transparent insulating material.

The display area 100 may include a light emitting area 102 and a circuit area 101. The first pixel PX1 may be disposed in the display area 100. The light emitting device EL1 of the first pixel PX1 may be disposed in the light emitting area 102. In the circuit area 101, a pixel circuit of the first pixel PX1 that is electrically connected to the light emitting device EL1 and includes the thin film transistor TR1 may be disposed. The circuit region 101 and the light emitting region 102 do not overlap, and therefore, the light emitting element EL1 and the pixel circuit may be disposed adjacent to each other so as not to overlap. The circuit area 101 is not limited to one thin film transistor TR1 disposed as shown in the drawing, and a plurality of thin film transistors and capacitors may be further included, and scan lines, data lines, power lines, etc. connected thereto Wirings of may be further provided.

The thin film transistor TR1 may include a semiconductor layer 111, a gate electrode 112, a source electrode 113, and a drain electrode 114 on the buffer layer 11. The first insulating layer 12 between the semiconductor layer 111 and the gate electrode 112 functions as a gate insulating layer, and the second insulating layer 13 between the gate electrode 112 and the source electrode 113 and the drain electrode 114 ) Can function as an interlayer insulating film.

The light emitting device EL1 includes a first electrode 116 on the third insulating layer 14 covering the thin film transistor TR1, a second electrode 130 facing the first electrode 116, and the first electrode 116. An intermediate layer 117 between the second electrodes 130 may be included.

The edge of the first electrode 116 may be covered by the fourth insulating layer 15, and the central portion of the first electrode 116 may be exposed. The fourth insulating layer 15 may be provided to cover the display area 100, but is not necessarily provided to cover the entire display area 100, and may cover at least a portion, especially the edge of the first electrode 116. It is enough.

An auxiliary layer 118 is provided on the third insulating layer 14 corresponding to the transparent region 200 exposed through the fourth insulating layer 15. That is, the auxiliary layer 118 may be disposed not to overlap with the intermediate layer 117.

The thickness of the auxiliary layer 118 may be 1 nm to 2,000 nm. Specifically, the thickness of the auxiliary layer 118 may be 1 nm to 50 nm, but is not limited thereto. If the above range is satisfied, as will be described later, while sufficiently obtaining the effect of patterning the second electrode, a relatively high transmittance of the transmission region 200 may be ensured.

The auxiliary layer 118 includes a first material.

The second electrode 130 is provided on the intermediate layer 117. The second electrode 130 is disposed corresponding to only the display area 100 and may not be disposed in the transmissive area 200.

The second electrode 130 includes a second material.

The first material and the second material satisfy Equation 1 below:

<Equation 1>

ST2 -ST1> 0 mJ/m ²

In Equation 1 above,

ST1 is the surface energy of the first material at 25°C;

ST2 is the surface energy of the second material at 25°C.

The first material may be deposited to correspond to the transmission region 200 using a dry process, for example, a fine metal mask, or may be coated to correspond to the transmission region 200 using a wet process. Then, a second material is deposited on both the display area 100 and the transmission area 200 using an open mask. In this case, since the surface energy of the first material and the second material are controlled differently, the second material may be controlled so that the second material is not disposed in a region where the first material is disposed. That is, the second material is relatively well deposited on the intermediate layer 117, but is not relatively well deposited on the auxiliary layer 118 including the first material. Therefore, since the auxiliary layer 118 including the first material is disposed corresponding to the transmission region 200, the second electrode 130 including the second material is not substantially provided in the transmission region 200, It may be disposed corresponding to only the display area 100. As can be seen in FIGS. 2 and 3, the auxiliary layer 118 is disposed in the area where the second electrode 130 should not be disposed, and the second electrode 130 The auxiliary layer 118 is not disposed in the area where) is to be disposed. Then, when the second material is deposited, even if the second material is deposited on both the display area 100 and the transmission area 200 of all pixels using an open mask, the metal is substantially only on the surface of the exposed intermediate layer 117. As evaporation is performed, and deposition is not substantially performed on the surface of the auxiliary layer 118, the second electrode 130 is patterned.

In order to lower the transmittance of the transmissive region 200, the second electrode 130 should not be substantially disposed in the transmissive region 200. To do this, in order to form the second electrode 130 disposed only in the display region 100 In the case of using a fine metal mask, since the deposition temperature is quite high, deformation may occur in the fine metal mask during long-term use. Accordingly, a very unstable element may be produced in a process such as a problem such as a shadow phenomenon. However, the display device 1 according to the exemplary embodiment of the present invention can automatically obtain the patterning effect of the second electrode 130 as described above, and thus, may be advantageous in process.

Also, since the second electrode 130 is not substantially disposed in the transmissive region 200, the transmittance of the transmissive region 200 may be improved. In other words, the second electrode is disposed corresponding to only the display area 100, and the second electrode 130 is not present in the transmissive area 200, so that the transmittance of the transmissive area 200 may be improved.

For example, ST2 -ST1 may be 30 mJ/m ^{2 or} more, and specifically, 50 mJ/m ^{2 or} more. If the above range is satisfied, the second material may not be substantially deposited on the first material.

For example, ST1 may be equal to or less than 0 mJ / m ² to more than 30 mJ / m ^2. If the above range is satisfied, the second material may not be substantially deposited on the first material. Specifically, ST1 may be 20 mJ/m ² or less, but is not limited thereto.

In one embodiment, the first material may be made of an organic compound. Specifically, the first material may be made of a fluorine-containing organic compound. More specifically, the first material may be an organic compound having a relatively high fluorine content.

For example, the first material may contain 20 at% or more of fluorine. If the above range is satisfied, the surface energy of the first material may be lowered so that the second material may not be substantially deposited on the first material. The fluorine content of the first material may be obtained by analyzing the first material using X-ray photoelectron spectroscopy (XPS). Specifically, the first material may contain 50 at% or more of fluorine, but is not limited thereto.

For example, as described above, the first material may be made of an organic compound, and the first material may include a fluorine-containing silane compound, a fluorine-based polymer compound, and combinations thereof.

The fluorine-containing silane compound is trichloro(1H,1H,2H,2H-perfluorodecyl)silane {Trichloro(1H,1H,2H,2H-perfluorodecyl)silane}, trichloro(1H,1H,2H,2H- Perfluoro-n-octyl)silane {Trichloro(1H,1H,2H,2H-perfluoro-n-octyl)silane}, triethoxy-1H,1H,2H,2H-perfluorodecylsilane (Triethoxy-1H ,1H,2H,2H-perfluorodecylsilane), 1H,1H,2H,2H-nonafluorohexyltriethoxysilane (1H,1H,2H,2H-Nonafluorohexyltriethoxysilane), 1H,1H,2H,2H-tridecafluoro -n-octyltriethoxysilane (1H,1H,2H,2H-Tridecafluoro-n-octyltriethoxysilane), 1H,1H,2H,2H-Eptatecafluorodecyltrimethoxysilane (1H,1H,2H,2H- Heptadecafluorodecyltrimethoxysilane), 1H,1H,2H,2H-nonafluorohexyltrimethoxysilane (1H,1H,2H,2H-Nonafluorohexyltrimethoxysilane), trimethoxy (1H,1H,2H,2H-perfluoro-n-octyl )Silane {Trimethoxy(1H,1H,2H,2H-perfluoro-n-octyl)silane}, 1,1,1-trifluoro-3-(trimethoxysilyl)propane {1,1,1-Trifluoro- 3-(trimethoxysilyl)propane}, (triethylsilyl)trifluoromethane{(Triethylsilyl)trifluoromethane}, triethoxy[5,5,6,6,7,7,7-heptafluoro-4,4 -Bis(trifluoromethyl)heptyl]silane {Triethoxy[5,5,6,6,7,7,7-heptafluoro-4,4-bis(trifluoromethyl)heptyl]silane}, trichloro(3,3, 3-trifluoropropyl)silane {Trichloro(3,3,3-trifluoropropyl)silane}, dimethoxy(methyl)(3,3,3-trifluoropropyl)silane {Dimethoxy(methyl )(3,3,3-trifluoropropyl)silane}, and dichloro(methyl)(3,3,3-trifluoropropyl)silane {Dichloro(methyl)(3,3,3-trifluoropropyl)silane} However, it is not limited thereto.

The fluorine-based high molecular weight compound is a poly hexafluoropropylene oxide (poly (hexafluoropropyleneoxide)), poly tetrafluoroethylene - co - hexafluoropropylene (poly (tetrafluoroethylene-co-hexafluoropropylene ), poly decamethylene fluorinated octyl acrylate (poly (decafluorooctyl acrylate)) , Poly tetrafluoro-3- (heptafluoropropoxy) propyl acrylate, poly tetrafluoro-3- (heptafluoroethoxy) propyl acrylate (poly(tetrafluoro- 3-(heptafluoroethoxy)propyl acrylate), poly(tetrafluoroehtylene), tetrafluoroethylene hexafluoropropylene vinylidene fluoride, poly(undecafluorohexyl acrylate), Poly (nonafluoropentyl acrylate), poly tetrafluoro-3- (trifluoromethoxy) propyl acrylate (poly(tetrafluoro-3-(trifluoromethoxy) propyl acrylate), poly pentafluorovinyl propionate) (poly(pentafluorovinyl propionate), poly(heptafluorobutyl acrylate)), poly(trifluorovinyl acetate), poly 1,1,1,3,3,3-hexafluoro isopropyl Acrylate (poly(1,1,1,3,3,3-hexafluoroisopropyl acrylate), poly octafluoropentyl acrylate (poly(octafluoropentyl ac rylate)), poly(methyl 3,3,3-trifluoropropyl siloxane), poly 2,2,3,3,4,4,4-heptafluoro butyl meta Acrylate (poly(2,2,3,3,4,4,4-heptafluorobutyl methacrylate)), poly(pentafluoropropyl acrylate), poly 2,2,3,3,3-pentafluoro Propyl acrylate (poly(2,2,3,3,3-pentafluoropropyl acrylate)), poly(2-heptafluorobutoxy)ethyl acrylate, polychlorotrifluoroethylene (poly( chlorotrifluoroethylene)) and poly 1,1,1,3,3,3-hexafluoroisopropyl methacrylate (poly(1,1,1,3,3,3-hexafluoroisopropyl methaacrylate)), but limited thereto It does not become.

As the difference between ST2 and ST1 increases, the second material may not be substantially deposited on the first material. To this end, ST2 may exceed 30 mJ/m ² . Alternatively, ST2 may be 100 mJ/m ^{2 or} more, but is not limited thereto.

In one embodiment, the second material may be made of an inorganic compound. Specifically, the second material may be made of a metal-containing inorganic compound.

For example, the second material may include magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), and combinations thereof. Specifically, the second material may include Mg, Ag, Al, and combinations thereof.

The first pixel PX1 may be, for example, a first red pixel Pr, a first green pixel Pg, and a first blue pixel Pb. However, the present invention is not limited thereto, and any combination of colors is possible as long as white light can be realized by combining.

4 is a schematic cross-sectional view of a display device 1B according to another exemplary embodiment of the display device of FIG. 2. 5 is a cross-sectional view illustrating the display unit 20 of FIG. 4 in more detail.

The auxiliary layer 118 may be disposed only in the transmission region 200 using a fine metal mask for patterning. On the other hand, unlike in FIG. 2, the second electrode 130 may be disposed to correspond to at least a portion of the display area 100 and the transmissive area 200. That is, the second electrode 130 may be disposed to correspond to all or part of the transmissive region 200.

Hereinafter, an embodiment in which the second electrode 130 is disposed to correspond to all of the display area 100 and the transmissive area 200 will be described in detail.

When the second material is deposited with an open mask, as shown in FIG. 5, the first portion 130a of the second electrode 130 is disposed on the intermediate layer 117 in correspondence to the display area 100, and the auxiliary layer 118 On ), the second portion 130b of the second electrode 130 is disposed corresponding to the transmission region 200. The thickness of the first portion (130a) (T ₁₎ to the thickness of the second portion (130b) (T ₂₎ satisfies the following formula 2:

<Equation 2>

T ₁ > T ₂ .

Since Equation 2 is satisfied, a decrease in transmittance due to the second portion 130b can be reduced.

Here, T ₁ denotes an average value of the thickness of the second electrode in all the first portions, and T ₂ denotes an average value of the thickness of the second electrode in all the second portions. Here, the area in which the second material is deposited with the open mask is a sum of all the first portions and all the second portions.

However, the above description does not exclude a case in which the second electrode is agglomerated in a portion of the transparent region 200, and the second electrode may be formed in an island shape in the transparent region 200.

Specifically, T ₂ may be greater than 0 nm and less than or equal to 1 nm. More specifically, T ₂ may be greater than 0 nm and less than or equal to 0.1 nm. When the above range is satisfied, the second electrode 130 is not substantially disposed in the transmission region 200.

Hereinafter, an embodiment in which the second electrode 130 is disposed to correspond to a portion of the display area 100 and the transparent area 200 will be described in detail. That is, the second electrode 130 may not be disposed on at least a part of the transmissive region 200.

A portion of the second electrode 130 disposed to correspond to a portion of the transmissive region may be formed of a plurality of particles including the second material.

Specifically, a thickness of a portion of the second electrode 130 disposed corresponding to the display area 100 may be greater than an average diameter of the plurality of particles. More specifically, the thickness T _E of the portion of the second electrode 130 disposed corresponding to the display area 100 and the average diameter D of the plurality of particles disposed corresponding to the portion of the transmissive area 200 The ratio ( R ) of _M ) may be 0.9 or less. More specifically, R may be 0.01 or more, 0.1 or more, 0.8 or less, 0.7 or less, 0.6 or less, or 0.5 or less, but is not limited thereto. If R satisfies the above-described range, a display device 1 having a desired level of transmittance can be provided:

R = {the thickness of the portion of the second electrode 130 disposed corresponding to the display area 100 (T _E )}/ {average diameter of a plurality of particles disposed corresponding to the portion of the transmission area 200 (D _M )}

For example, when T _E is 10 nm, D _M may be about 5 nm or less, and as another example, when T _E is 20 nm, D _M may be about 10 nm or less.

Since each component has the same or similar function to the corresponding component of the embodiment of FIGS. 2 and 3 described above, a detailed description thereof will be omitted.

6 and 7 are cross-sectional views and plan views schematically illustrating a display device 2A according to another exemplary embodiment of the present invention. Specifically, FIG. 7 is a plan view showing first pixels PX1 adjacent to each other, for example, a first red pixel Pr, a first green pixel Pg, and a first blue pixel Pb, 6 is a cross-sectional view taken along line A-A' of FIG. 7.

Unlike the display device 1A illustrated in FIGS. 2 and 3, in the display device 2A illustrated in FIGS. 6 and 7, the circuit area 101 and the light emitting area 102 included in the display area 100 are planar. They can be arranged to overlap each other.

In addition, the plurality of first pixels PX1, for example, the first red pixel Pr, the first green pixel Pg, and the adjacent transmission regions 200 of the first blue pixel Pb are connected to each other. As a result, a common transmissive region 200 can be formed. In this case, the area of the transmission region 200 may be wider than that of the embodiments of FIGS. 2 and 3. Accordingly, the transmittance of the display device 2A can be increased.

Since each component has the same or similar function to the corresponding component of the embodiments of FIGS. 2 and 3 described above, a detailed description thereof will be omitted.

8 is a schematic cross-sectional view of a display device 2B according to another exemplary embodiment of the display device of FIG. 6.

The auxiliary layer 118 may be disposed only in the transmission region 200 using a fine metal mask for patterning. On the other hand, unlike in FIG. 6, the second electrode 130 may be disposed to correspond to at least a portion of the display area 100 and the transmissive area 200. That is, the second electrode 130 may be disposed to correspond to all or part of the transmissive region 200.

Hereinafter, an embodiment in which the second electrode 130 is disposed to correspond to all of the display area 100 and the transmissive area 200 will be described in detail.

When the second material is deposited with an open mask, the first portion 130a of the second electrode 130 is disposed on the intermediate layer 117 to correspond to the display area 100, and the transmission area 200 is on the auxiliary layer 118. The second portion 130b of the second electrode 130 is disposed in correspondence with the second electrode 130. The thickness of the first portion (130a) has a thickness of a second portion represented by first thickness (T _1), and (130b) is referred to as the second thickness (T _2), a second thickness (T ₂₎ and the first The thickness (T ₁ ) satisfies the following equation 2:

<Equation 2>

T ₁ > T ₂

In Formula 2,

T ₁ is the thickness of the second electrode in the display area;

T ₂ is the thickness of the second electrode in the transmissive region.

Since Equation 2 is satisfied, a decrease in transmittance due to the second portion 130b can be reduced.

Specifically, T ₂ may be greater than 0 nm and less than or equal to 1 nm. More specifically, T ₂ may be greater than 0 nm and less than or equal to 0.1 nm. When the above range is satisfied, the second electrode 130 is not substantially disposed in the transmission region 200.

Hereinafter, an embodiment in which the second electrode 130 is disposed to correspond to a portion of the display area 100 and the transparent area 200 will be described in detail. That is, the second electrode 130 may not be disposed on at least a part of the transmissive region 200.

A portion of the second electrode 130 disposed to correspond to a portion of the transmissive region may be formed of a plurality of particles including the second material.

Specifically, a thickness of a portion of the second electrode 130 disposed corresponding to the display area 100 may be greater than an average diameter of the plurality of particles. More specifically, the thickness T _E of the portion of the second electrode 130 disposed corresponding to the display area 100 and the average diameter D of the plurality of particles disposed corresponding to the portion of the transmissive area 200 The ratio (R) of _M ) may be 0.9 or less. More specifically, R may be 0.01 or more, 0.1 or more, 0.8 or less, 0.7 or less, 0.6 or less, or 0.5 or less, but is not limited thereto. If R satisfies the above-described range, a display device 1 having a desired level of transmittance can be provided:

R = {the thickness of the portion of the second electrode 130 disposed corresponding to the display area 100 (T _E )}/ {average diameter of a plurality of particles disposed corresponding to the portion of the transmission area 200 (D _M )}

For example, when T _E is 10 nm, D _M may be about 5 nm or less, and as another example, when T _E is 20 nm, D _M may be about 10 nm or less.

Since each component has the same or similar function to the corresponding component of the embodiment of FIGS. 2 to 4 described above, a detailed description thereof will be omitted.

9 to 14 are cross-sectional views illustrating a method of manufacturing a display device 1A according to an exemplary embodiment of the present invention.

9 to 14, a method of manufacturing a display device 1A according to an exemplary embodiment of the present invention includes: providing a first substrate; And providing a display unit including a display area and a transmissive area on the first substrate; Providing the display unit may include providing an auxiliary layer only in the transmissive area; And providing a second electrode on the display area or on the display area and the transmissive area. The auxiliary layer includes a first material, the second electrode includes a second material, and the descriptions of the first material and the second material refer to the foregoing.

Hereinafter, a method of manufacturing the display device 1A according to an exemplary embodiment will be described in detail with reference to the drawings.

Referring to FIG. 9, a buffer layer 11 is provided on a first substrate 10, and a pixel circuit including a thin film transistor TR1 is provided on the buffer layer 11.

The first substrate 10 may include a glass material, a ceramic material, a metal material, a plastic material, or a material having a flexible or bendable property.

The buffer layer 11 blocks impurity elements from penetrating through the first substrate 10, performs a function of flattening the surface, and contains inorganic materials such as silicon nitride (SiN _x ) and/or silicon oxide (SiO _x ). It may be formed as a single layer or multiple layers. The buffer layer 11 may be omitted.

On the buffer film 11, the semiconductor layer 111 of the first pixel PX1 is provided in the display device 1A. The semiconductor layer 111 may contain various materials. For example, the semiconductor layer 111 may contain an inorganic semiconductor material such as amorphous silicon or crystalline silicon. As another example, the semiconductor layer 111 may contain an oxide semiconductor or an organic semiconductor material.

The first insulating layer 12 may be provided on the buffer layer 11 to cover the semiconductor layer 111, and the gate electrode 112 of the first pixel PX1 may be provided on the first insulating layer 12. .

The first insulating layer 12 is formed of one or more insulating layers selected from among SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ , ZrO ₂ , BST, and PZT. I can. The first insulating layer 12 may be an inorganic insulating layer.

The gate electrode 112 may be formed of various conductive materials. For example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium One or more materials selected from (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) may be formed as a single layer or multiple layers. For example, the gate electrode 112 may be formed of three layers of Mo/Al/Mo or Ti/Al/Ti.

A second insulating film 13 is provided on the first insulating film 12 to cover the gate electrode 112, and the source electrode 113 and the drain electrode of the first pixel PX1 are provided on the second insulating film 13 114) may be provided to be electrically connected to each of the semiconductor layers 111 through a contact hole.

The second insulating layer 13 may be an inorganic insulating layer. The second insulating film 13 is formed of one or more insulating films selected from among SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ , ZrO ₂ , BST, and PZT as a single layer or multiple layers. I can. In another embodiment, the second insulating layer 13 may be an organic insulating layer.

The source electrode 113 and the drain electrode 114 may be formed of various conductive materials. For example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium One or more materials selected from (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) may be formed as a single layer or multiple layers. For example, the source electrode 113 and the drain electrode 114 may have two or more layers.

The structure of the thin film transistor TR1 is not necessarily limited to that shown, and of course, various types of the structure of the thin film transistor can be applied.

A third insulating layer 14 is provided to cover the thin film transistor TR1 of the first pixel PX1.

The third insulating layer 14 may be formed of a single layer or a plurality of organic insulating layers with a flat top surface. The third insulating film 14 is a general purpose polymer (PMMA, PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, and a vinyl alcohol. Polymers and blends thereof. For example, the third insulating layer 14 may include polyimide, polyamide, acrylic resin, or the like.

In general, the surface energy of the compound included in the third insulating layer 14 is 100 mJ/m ² or more. Therefore, without forming the auxiliary layer 118 in the transmissive region 200, the second material is applied directly on the third insulating layer 14 to both the display region 100 and the transmissive region 200 using an open mask. When evaporation is performed, since the surface energy of the compound included in the third insulating layer 14 and the surface energy of the second material are the same or similar, the effect of patterning the second electrode 130 cannot be obtained at all.

A first electrode 116 of the light emitting device EL1 electrically connected to the thin film transistor TR1 of the first pixel PX1 is provided on the third insulating layer 14. The first electrode 116 may be provided to correspond to the display area 100.

When the light emitting device EL1 is a front light emitting device, the first electrode 116 may be formed as a reflective electrode. The reflective electrode may include a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof, and a transparent or translucent electrode layer formed on the reflective layer. When the light emitting device EL1 is a rear light emitting device, the first electrode 116 may include a transparent material such as ITO, IZO, ZnO, or In ₂ O ₃ , and may be formed as a transparent or semi-transparent electrode.

9, the buffer layer 11, the first insulating layer 12, the second insulating layer 13, and the third insulating layer 14 cover all of the display area 100 and the transmissive area 200, respectively. Can be provided to However, the embodiment of the present invention is not limited thereto, and at least one of the buffer layer 11, the first insulating layer 12, the second insulating layer 13, and the third insulating layer 14 corresponds to the transmission region 200. By providing an opening (not shown) at the position, the external light transmission efficiency of the transmission region 200 may be further increased.

External light passes through the transmission region 200 and is recognized by the user. Accordingly, only a transparent insulating layer or the like may be disposed in the transmissive region 200, and the transmittance of the transmissive region 200 may be increased by minimizing reflection occurring at the interface of the films disposed in the transmissive region 200.

The interfacial reflection may increase as the difference in refractive index between layers in contact with each other increases. According to an embodiment, the buffer layer 11, the first insulating layer 12, the second insulating layer 13, and the third insulating layer 14 may all be a single layer having substantially the same refractive index. Interfacial reflection generated between layers by configuring the buffer layer 11, the first insulating layer 12, the second insulating layer 13, and the third insulating layer 14 to have the same refractive indices in the transmission region 200 By minimizing, it is possible to increase the transmittance of the transmissive region 200.

Referring to FIG. 10, a fourth insulating layer 15 covering an edge of the first electrode 116 may be provided on the third insulating layer 14. The fourth insulating layer 15 may be formed of a single layer or multiple layers of the inorganic insulating layer or the organic insulating layer described above.

The fourth insulating layer 15 may be provided to cover the display area 100 of the display device 1A, but is not necessarily provided to cover the entire display area 100, and at least partially, in particular, the first pixel ( It is sufficient to cover the edge of the first electrode 116 of PX1).

The fourth insulating layer 15 includes a first opening 15a exposing at least a portion of the first electrode 116 of the first pixel PX1 and a second opening 15b at a position corresponding to the transmission region 200. Can be equipped. Since the fourth insulating layer 15 is not located in the transmissive region 200, the external light transmission efficiency of the transmissive region 200 may be further increased.

Referring to FIG. 11, an intermediate layer 117 may be provided on the first electrode 116 exposed through the first opening 15a of the first pixel PX1.

The intermediate layer 223 includes a light emitting layer that emits light, and in addition, a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer. It may further include at least one functional layer of (EIL: electron injection layer). However, the present embodiment is not limited thereto, and various functional layers may be further disposed on the first electrode 116.

The emission layer may be a red emission layer, a green emission layer, or a blue emission layer. Alternatively, the emission layer may have a multilayer structure in which a red emission layer, a green emission layer, and a blue emission layer are stacked to emit white light, or a single layer structure including a red emission material, a green emission material, and a blue emission material.

In one embodiment, the intermediate layer 117 uses a mask having an opening M11 corresponding to the light emitting area 102 of the display device 1A, for example, a fine metal mask (FMM), and the light emitting area 102 Can only be provided.

In another embodiment, the light emitting layer of the intermediate layer 117 is provided only in the light emitting region 102 using a Fine Metal Mask (FMM) having an opening M11 corresponding to the light emitting region 102 of the display device 1A, Other functional layers may be provided on the front surface of the first substrate 10 using an open mask.

In the exemplary embodiment of the present invention, at least a light emitting layer is not provided in the transmissive region 200 of the display device 1A.

Referring to FIG. 12, an auxiliary layer 118 may be provided on the third insulating layer 14 exposed through the second opening 15b.

In one embodiment, the auxiliary layer 118 may be provided only to the transmission region 200 using a dry process, for example, a fine metal mask having an opening M21 corresponding to the transmission region 200.

In another embodiment, the auxiliary layer 118 may be coated only on the transmissive region 200 using a wet process.

Referring to FIG. 13, in an embodiment, a second electrode 130 may be provided on the intermediate layer 117 or on the intermediate layer 117 and the auxiliary layer 118.

The second electrode 130 may be provided by depositing the second material using an open mask. At this time, the surface energy of the first material of the auxiliary layer 118 and the second material of the second electrode 130 are controlled to be different, so that the second material is substantially provided in the transmission region 200 provided with the first material. May not be. That is, the second material is well deposited on the intermediate layer 117, but is not well deposited on the auxiliary layer 118 including the first material. Therefore, since the auxiliary layer 118 including the first material is disposed corresponding to the transmission region 200, the second electrode 130 including the second material is not substantially provided in the transmission region 200, It may be arranged to correspond only to the display area 100.

Referring to FIG. 14, after the second substrate 30 is additionally aligned on the first substrate 10, the first substrate 10 and the second substrate 30 may be combined.

The second substrate 30 may include a glass material, a ceramic material, a metal material, a plastic material, or a material having a flexible or bendable property.

A black matrix BM and a color filter CF may be disposed on a surface of the second substrate 30 facing the first substrate 10. The color filter CF may be disposed to correspond to the light emitting area 102 of the display device 1A. The black matrix BM may be disposed to correspond to a region of the display device 1A except for the light emitting region 102 and the transmissive region 200. That is, the black matrix BM is not disposed in the transmissive region 200 of the display device 1A.

Although not shown, a protective layer may be further disposed on the second electrode 130 before the second substrate 30 is coupled to the first substrate 10. The protective layer may be a single layer or multiple layers of an inorganic layer and/or an organic layer.

Also, although not shown, various functional layers may be further provided on the second substrate 30. For example, the functional layer may be an antireflection layer that minimizes reflection on the upper surface of the second substrate 30, and a pollution prevention layer that prevents contamination such as a user's handprint (eg, fingerprint marks).

In another embodiment, a thin film encapsulation layer may be disposed on the first substrate 10 instead of the above-described second substrate 30. The thin film encapsulation layer may include an inorganic encapsulation layer provided with at least one inorganic material and an organic encapsulation layer provided with at least one organic material. In some embodiments, the thin film encapsulation layer may be provided in a structure in which the first inorganic encapsulation layer/organic encapsulation layer/the second inorganic encapsulation layer are stacked.

15 and 16 are cross-sectional views illustrating a method of manufacturing a display device according to another exemplary embodiment of the present invention.

In another embodiment, after the process shown in FIG. 10, the process shown in FIG. 15 is performed, and then, the process shown in FIG. 16 is performed, and as shown in FIG. 13, the intermediate layer 117 and the auxiliary layer The second electrode 130 on the 118 may be provided on the entire surface of the first substrate 10 as a common layer. Specifically, after the process shown in FIG. 10, as shown in FIG. 15, the auxiliary layer 118 may be provided on the third insulating layer 14 exposed through the second opening 15b. Then, as shown in FIG. 16, the intermediate layer 117 may be provided on the first electrode 116 exposed through the first opening 15a of the first pixel PX1.

After the auxiliary layer 118 is formed, as long as the second electrode 130 is formed, various modifications in the process are possible.

Display device 1 is a mobile phone, video phone, smart phone, smart pad, smart watch, tablet PC, notebook, computer monitor, television, digital broadcasting terminal, PDA (Personal Digital Assistants), PMP (Portable Multimedia Player) , May be implemented as an electronic device 1000 such as a head mounted display (HMD), vehicle navigation, or the like.

17 is a block diagram schematically illustrating a configuration of an electronic device according to an embodiment of the present invention. 18A and 18B are perspective views schematically illustrating an electronic device according to an embodiment of the present invention.

Referring to FIG. 17, the electronic device 1000 may include a processor 1010, a memory device 1020, a storage device 1030, an input/output device 1040, a power supply 1050, and a display device 1060. have. In this case, the display device 1060 may correspond to the display device 1 of FIG. 1. The electronic device 1000 may further include several ports capable of communicating with a video card, a sound card, a memory card, a USB device, or the like, or with other systems.

In an embodiment, as shown in FIG. 18A, the electronic device 1000 may be implemented as a television. In another embodiment, as illustrated in FIG. 18B, the electronic device 1000 may be implemented as a smart phone. However, these are examples, and the electronic device 1000 is not limited thereto.

Next, with reference to FIGS. 19 and 20, the presence or absence of the second electrode 130 depending on the presence or absence of the auxiliary layer 118 will be described. The transmittances of Comparative Examples 1 to 3, Examples 1 and 2 were measured at a wavelength of 300 nm to 1,000 nm.

The graph indicated by Comparative Example 1 is a graph of the transmittance of Sample 1. Sample 1 is a 0.5 mm thick glass substrate. The graph indicated by Comparative Example 2 is a graph of the transmittance of Sample 2. Sample 2 is a substrate in which a 9 nm thick AgMg thin film is formed by depositing AgMg (weight ratio = 10:1) on a 0.5 mm thick glass substrate. The graph represented by Example 1 is a graph of the transmittance of Sample 3. Sample 3 is a substrate prepared by depositing AgMg after forming an auxiliary layer with a thickness of 10 nm on a glass substrate having a thickness of 0.5 mm. The closer to the transmittance graph of Comparative Example 1, it means that the second electrode was not formed.

Referring to FIG. 19, it can be seen that the graph of Example 1 is significantly closer to the graph of Comparative Example 1 than the graph of Comparative Example 2. Accordingly, it can be confirmed that the second electrode is not substantially formed by forming the auxiliary layer.

The graph represented by Comparative Example 3 is a graph of the transmittance of Sample 4. Sample 4 is a substrate in which a mixed electron transport layer having a thickness of 36 nm is formed on a glass substrate having a thickness of 0.5 mm, and a Yb thin film having a thickness of 1.3 nm is formed. The graph represented by Example 2 is a graph of the transmittance of Sample 5. Sample 5 formed a mixed electron transport layer having a thickness of 36 nm on a glass substrate having a thickness of 0.5 mm, an auxiliary layer having a thickness of 10 nm, a Yb thin film having a thickness of 1.3 nm, and then AgMg (weight ratio = 10:1 It is a substrate manufactured by depositing ). The closer to the transmittance graph of Comparative Example 3, it means that the second electrode was not formed.

Referring to FIG. 20, it can be seen that the graph of Example 2 is significantly close to the graph of Comparative Example 3. Accordingly, it can be confirmed that the second electrode is not substantially formed by forming the auxiliary layer. In addition, the average transmittance of Example 2 is 87.15%, and the average transmittance of Comparative Example 3 is 87.45%, which is very similar.

Next, referring to FIG. 21A, in the case of Example 2, it can be seen that the second electrode formed on the auxiliary layer has a particle shape. 21C is a partially enlarged view of FIG. 21A.

As described above, the present invention has been described with reference to the embodiments shown in the drawings, but these are only exemplary, and those of ordinary skill in the art will understand that various modifications and variations of the embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

Claims (20)

A first substrate; And a display unit; And
The display unit includes a display area and a transmissive area;
The display unit may include an auxiliary layer disposed to correspond to the transmissive area; And a second electrode disposed to correspond only to the display area,
The auxiliary layer comprises a first material,
The second electrode comprises a second material,
The first material and the second material satisfy Equation 1 below:
<Equation 1>
ST2 -ST1> 0 mJ/m ²
In Equation 1 above,
ST1 is the surface energy of the first material at 25°C;
ST2 is the surface energy of the second material at 25°C. The method of claim 1,
The display device, wherein the second electrode is absent in the transmissive region. The method of claim 1,
ST1 is 0 mJ / m ² to more than 30 mJ / m ² or less, the display apparatus. The method of claim 1,
The display device, wherein the first material contains 20 at% or more of fluorine. The method of claim 1,
The first material is a display device comprising a fluorine-containing silane compound, a fluorine-based polymer compound, and combinations thereof. The method of claim 1,
The second material includes magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), and combinations thereof. A first substrate; And a display unit; And
The display unit includes a display area and a transmissive area;
The display unit may include an auxiliary layer disposed to correspond to the transmissive area; And a second electrode disposed to correspond to at least a portion of the display area and the transmissive area; and
The auxiliary layer comprises a first material,
The second electrode comprises a second material,
The first material and the second material satisfy Equation 1 below:
<Equation 1>
ST2 -ST1> 0 mJ/m ²
In Equation 1 above,
ST1 is the surface energy of the first material at 25°C;
ST2 is the surface energy of the second material at 25°C. The method of claim 7,
The second electrode is disposed to correspond to all of the display area and the transmissive area,
A first portion of the second electrode is disposed corresponding to the display area,
A second portion of the second electrode is disposed corresponding to the transparent region,
The thickness of the first portion (T ₁ ) and the thickness of the second portion (T ₂ ) satisfy Equation 2 below:
<Equation 2>
T ₁ > T ₂ . The method of claim 8,
T ₂ is greater than 0 nm and less than or equal to 1 nm. The method of claim 7,
The second electrode is disposed corresponding to the display area and a part of the transmissive area,
A display device, wherein a portion of the second electrode disposed to correspond to a portion of the transmissive region is made of a plurality of particles including the second material. The method of claim 10,
The display device, wherein a thickness of a portion of the second electrode disposed corresponding to the display area is greater than an average diameter of the plurality of particles. The method of claim 9,
ST1 is 0 mJ / m ² to more than 30 mJ / m ² or less, the display apparatus. The method of claim 9,
The display device, wherein the first material contains 20 at% or more of fluorine. The method of claim 9,
The first material is a display device comprising a fluorine-containing silane compound, a fluorine-based polymer compound, and combinations thereof. The method of claim 9,
The second material includes magnesium (Mg), silver (Ag), aluminum (Al), lithium (Li), calcium (Ca), indium (In), and combinations thereof. The method of claim 9,
The display device further includes a first electrode and an intermediate layer,
The intermediate layer is interposed between the first electrode and the second electrode. Providing a first substrate; And
Providing a display unit including a display area and a transmissive area on the first substrate; Includes;
Providing the display unit may include providing an auxiliary layer only in the transmissive area; And providing a second electrode on the display area or on the display area and the transparent area; and
The auxiliary layer comprises a first material,
The second electrode comprises a second material,
The first material and the second material satisfy Equation 1 below:
<Equation 1>
ST2 -ST1> 0 mJ/m ²
In Equation 1 above,
ST1 is the surface energy of the first material at 25°C;
ST2 is the surface energy of the second material at 25°C. The method of claim 17,
The method of manufacturing a display device, wherein the second electrode is provided by depositing the second material using an open mask. The method of claim 17,
The display device further includes a first electrode and an intermediate layer,
After providing an intermediate layer on the first electrode,
Providing an auxiliary layer only in the transmissive region,
A method of manufacturing a display device, comprising providing a second electrode on the intermediate layer or on the intermediate layer and the auxiliary layer. The method of claim 17,
The display device further includes a first electrode and an intermediate layer,
After providing an auxiliary layer only in the transmissive region,
A method of manufacturing a display device, comprising providing an intermediate layer on the first electrode and providing a second electrode on the intermediate layer or on the intermediate layer and the auxiliary layer.

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