KR20200116839A - The indium precursor compound, thin film including the same and preparing method of thin film using the same - Google Patents

Abstract

The present invention relates to an indium precursor compound, a thin film including the same, and a method of producing the thin film, and more specifically, to an indium precursor compound, a thin film which includes the indium precursor compound and exhibits excellent uniformity in the thickness thereof during large-area deposition, and a method of producing the thin film, wherein the indium precursor compound is represented by chemical formula 1 has a high deposition rate, high volatility, and excellent thermal stability and storage stability, and is easily handled. In chemical formula 1, R_1 to R_2 are hydrogen or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, R_3 to R_4 are independently selected from the group consisting of hydrogen, halogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and a substituted or unsubstituted aryl group having 1 to 10 carbon atoms, X is a hetero atom, n is an integer from 1-5, and m is 1-2.

Description

Indium precursor compound, a thin film containing the same, and a method of manufacturing the thin film {THE INDIUM PRECURSOR COMPOUND, THIN FILM INCLUDING THE SAME AND PREPARING METHOD OF THIN FILM USING THE SAME}

The present invention relates to an indium precursor compound, a thin film including the same, and a method of manufacturing the thin film, and more particularly, an indium precursor compound that has a high deposition rate and is easy to handle, and is deposited with a uniform thickness during large-area deposition. It relates to a thin film and a method of manufacturing the thin film.

Next-generation displays are developing with the goal of low power, high resolution, and high reliability. To achieve this goal, a thin film transistor (TFT) material having high charge mobility is required.

In the past, amorphous silicon was used for thin film transistors, but recently, metal oxides having higher charge mobility than silicon and easier low-temperature processes than polycrystalline silicon have been used. As such metal oxides, materials to which various kinds of metal atoms such as indium and zinc are added are used, and the metal oxide thin film is sputtering, ALD (Atomic Layer Deposition), PLD (Pulsed Laser Deposition). ), CVD (Chemical Vapor Deposition), etc.

Indium is widely used in transparent electrodes because of its excellent transparency and electrical conductivity. As shown in Korean Patent Application Publication No. 2011-0020901, a metal thin film containing indium (In) is formed by sputtering using a sputter target. In this case, since the composition of the deposited thin film is determined by the sputter target, there is a limit to uniformly controlling the composition of the thin film. In addition, as the large-area deposition proceeds, the composition and thickness of the thin film are not uniform, making it difficult to obtain uniform film characteristics.

In addition, in the case of manufacturing by chemical vapor deposition (CVD) instead of sputtering, the previously used indium precursor (e.g., trimethyl indium (CAS NO. 3385-78-2)) is mostly solid, so the vapor pressure is controlled. And there is a problem in terms of film quality reproducibility. In particular, in high-temperature conditions (above 250 ℃), most of the indium (In) precursors are thermally decomposed, making it difficult to obtain high-quality thin films, and there is also a limit to obtaining thin films with uniform thickness and multi-component composition during large-area deposition. exist.

Therefore, it has excellent thermal stability against high temperatures and has a high deposition rate. There is an urgent need to develop high-quality indium precursors that are uniformly deposited over a large area.

Korean Patent Application Publication No. 2011-0020901

In order to solve the problems of the prior art as described above, an object of the present invention is to provide an indium precursor compound having a high deposition rate and easy handling.

Another object of the present invention is to provide a thin film deposited to a uniform thickness during large-area deposition and a method of manufacturing the thin film.

All of the above and other objects of the present invention can be achieved by the present invention described below.

In order to achieve the above object, the present invention provides an indium precursor compound, characterized in that represented by the following formula (1).

[Formula 1]

(In Formula 1, R ₁ to R ₂ are hydrogen, or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R ₃ to R ₄ are independently hydrogen, halogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. , And a substituted or unsubstituted aryl group having 1 to 10 carbon atoms, X is a hetero atom, n is an integer of 1 to 5, and m is 1 or 2.)

In addition, the present invention provides a method of manufacturing a thin film comprising the step of forming a thin film by depositing the indium precursor compound of the present invention on a substrate.

Further, the present invention provides an indium-containing thin film comprising the indium precursor compound of the present invention.

According to the present invention, there is an effect of providing an indium precursor compound having a high deposition rate and easy handling, a thin film deposited to a uniform thickness during large-area deposition using the same, and a method of manufacturing the thin film.

1 is a graph showing a ¹ H NMR spectrum of an indium precursor compound 3-1 prepared in Example 1. FIG.
2 is a graph showing a ¹ H NMR spectrum of the indium precursor compound 3-2 prepared in Example 2.

Hereinafter, the indium precursor compound of the present disclosure, a thin film including the same, and a method of manufacturing the thin film will be described in detail.

The terms or words used in this specification and claims should not be construed as being limited to their usual or dictionary meanings, and the inventor may appropriately define the concept of terms in order to describe his own invention in the best way. It should be interpreted as a meaning and concept consistent with the technical idea of the present invention based on the principle that there is.

In the present specification, when a member is positioned'on' another member, this includes not only a case where a member is in contact with another member, but also a case in which another member exists between the two members.

In the present specification, when a part'includes' a certain component, it means that other components may be further included rather than excluding other components unless otherwise stated.

Unless otherwise specified in the specification,'substituted' or'unsubstituted' may be substituted or unsubstituted with one or more substituents among hydrogen, halogen group, alkyl group, or aryl group.

Unless otherwise specified in the specification, a'halogen group' or a'halogen atom' means any one selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I).

Unless otherwise specified in the specification, the'alkyl group' may be a straight chain, branched chain, or cyclic chain, and may be an alkyl group having 1 to 10 carbon atoms (C1 to C10). The alkyl group may be a primary alkyl group, a secondary alkyl group, or a tertiary alkyl group. Specific examples of the alkyl group include methyl group, ethyl group, propyl group, iso-propyl group, butyl group, iso-butyl group, sec-butyl group, tert-butyl group, pentyl group, iso-pentyl group, neo-pentyl group, tert -It may be a pentyl group, a hexyl group, an iso-hexyl group, etc., but is not limited thereto.

Unless otherwise specified in the specification, the'aryl group' may have 6 to 20 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. The monocyclic aryl group may be a phenyl group, a biphenyl group, a terphenyl group, and the like, and the polycyclic aryl group may be a naphthyl group, an anthracenyl group, or a pyrenyl group, but is not limited thereto.

Unless otherwise specified in the specification,'alkylene' is a divalent atomic group obtained by subtracting two hydrogen atoms from an alkane, and may be represented by the general formula -C _n H _2n -. The alkanes include linear alkanes and branched alkanes, and include primary alkanes, secondary alkanes and tertiary alkanes.

The inventors of the present invention confirmed that when depositing indium precursors prepared by synthesizing various compounds on a large-area substrate, it was possible to manufacture a high-quality indium-containing thin film with excellent uniformity of thin film thickness even at high temperatures. Was completed.

Indium precursor compound

The indium precursor compound of the present invention is characterized by the following formula (1), and in this case, the covalent bond between nitrogen and indium of formula (1) has a high deposition rate because it is easy to break, and there is no fear of spontaneous ignition due to low reactivity. It has the advantage of being easy to handle.

[Formula 1]

(In Formula 1, R ₁ to R ₂ are hydrogen, or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R ₃ to R ₄ are independently hydrogen, halogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. , And a substituted or unsubstituted aryl group having 1 to 10 carbon atoms, X is a hetero atom, n is an integer of 1 to 5, and m is 1 or 2.)

As a preferred example, in Formula 1, R ₁ and R ₂ may independently be hydrogen or a substituted or unsubstituted 1 to 6 alkyl group, and R ₁ may be more preferably a tert-butyl group, and R ₂ is More preferably, it may be a substituted or unsubstituted 1 to 2 alkyl group, which has a high deposition rate and high volatility, does not decompose even at high temperatures, and exists as a liquid at room temperature.

In Formula 1, R ₃ to R ₄ may be independently selected from the group consisting of hydrogen, halogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and a substituted or unsubstituted aryl group having 1 to 10 carbon atoms. In this case, since the reactivity of Formula 1 is low, handling is easy and deposition rate is improved.

In a specific example, the R ₃ to R ₄ are independently methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, tert-butyl group, n-phen It may be selected from the group consisting of a tyl group, iso-pentyl group, neo-pentyl group, sec-pentyl group, tert-pentyl group, n-hexyl group, iso-hexyl group, sec-hexyl group and tert-hexyl group, In this case, there are advantages of excellent thermal stability and storage stability and easy handling.

In a preferred example, R ₃ to R ₄ may be independently a methyl group or an ethyl group.

In Formula 1, X may be, for example, a hetero atom, and the hetero atom is not particularly limited as long as it has a non-shared electron pair capable of coordinating with indium (In), but preferably oxygen (O) or amine (N ) Can be.

In Formula 1, the hetero atom and indium (In) may be coordinarily bonded, and in this case, the covalent bond between nitrogen and indium in Formula 1 is apt to be broken, so that the vaporization and thermal stability are excellent while having a high deposition rate.

In Formula 1, n may be, for example, an integer of 1 to 5, and preferably an integer of 2 to 3, and in this case, thermal stability and volatility are improved to enable the manufacture of a high-quality thin film containing indium.

In Formula 1, m is 1 or 2 as an example, and specifically, m is determined to be 1 or 2 depending on the type of X.

In a preferred example, m is 1 when X is oxygen (O) and 2 when X is amine (N).

The indium precursor compound may be prepared by the following Scheme 1 as an example.

[Scheme 1]

(In Reaction Scheme 1, R ₅ is a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R ₁ , R ₂ , R ₃ , R ₄ , X and n are as defined in Chemical Formula 1.)

Thin film manufacturing method

The method of manufacturing a thin film of the present invention is characterized by including the step of forming a thin film by depositing the indium precursor compound of the present substrate on a substrate, and in this case, the thickness uniformity of the thin film is improved during large-area deposition, resulting in a complex-shaped substrate. Even in, a uniform thin film can be easily manufactured.

As an example, the method of manufacturing the thin film may include depositing at least one of a gallium precursor and a zinc precursor and the indium precursor compound on a substrate to form a thin film. In this case, the composition of the multi-component system is uniform and thermal It is advantageous to manufacture a transparent electronic device having excellent stability.

As a preferred example, the thin film formation step may be a step of sequentially depositing the indium precursor compound, gallium precursor, and zinc precursor on a substrate to form a thin film, and in this case, there is an advantage that the deposition rate of the IGZO thin film transistor is increased.

The method of manufacturing the thin film may further include, for example, depositing a thin film formed on the substrate by using plasma, and in this case, a high-quality thin film can be obtained even at a low temperature.

The plasma may be, for example, an oxygen plasma, but is not limited thereto.

The method of manufacturing a thin film of the present invention may be carried out including one or more of the following steps:

-Forming a layer by injecting the indium precursor compound of the present invention onto a substrate;

-Purging the unadsorbed indium precursor compound with an inert gas;

-Injecting a reactive gas to react with the adsorbed indium precursor compound layer;

-Purging the by-products and unreacted materials generated by the reaction of the indium precursor compound layer and the reactive gas.

The above step may be repeated one or more times as an example, and through the above steps, an indium-containing thin film that is uniformly deposited on a large area at high temperature may be obtained.

As a specific example, the method of manufacturing the thin film may be carried out including the following steps:

a) carrying the substrate into the reaction chamber and maintaining the sintering temperature;

b) a first purging step of injecting an inert gas into the reaction chamber;

c) injecting the indium precursor compound of the present substrate into the reaction chamber to deposit on the substrate;

d) a second purging step of injecting an inert gas into the reaction chamber, leaving the indium precursor compound chemically adsorbed on the substrate and removing the physically adsorbed indium precursor compound;

e) injecting a reaction gas into the reaction chamber to react with the chemically adsorbed indium precursor compound; And

f) a third purging step of discharging by-products and unreacted substances generated by the reaction of the chemically adsorbed indium precursor compound and a reaction gas to the outside of the reaction chamber.

The steps a) to f) may be repeated one or more times as an example.

The deposition may be, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD), but is not limited thereto.

In the chemical vapor deposition method or atomic layer deposition method, for example, by supplying raw materials to a substrate in a gaseous state, a film of uniform thickness can be formed even on the surface of a structure having a large aspect ratio, and the indium precursor of the present substrate is also used on a large area or roll type substrate. By supplying the compound at a uniform concentration, a uniform film can be formed.

The deposition temperature may be, for example, 200 to 1,000 °C, 200 to 800 °C, 200 to 500 °C, 250 to 500 °C, or 300 to 500 °C, and within this range, impurities such as carbon in the film ) As the content is not large, so desired film properties can be obtained.

For the deposition, for example, a time division deposition apparatus in which deposition materials are sequentially supplied and deposited may be used.

As another example, a space division deposition apparatus in which the substrate rotates and reciprocates in a space filled with a gas of one raw material and a space filled with a gas of another raw material may be used.

As another example, when the substrate is a polymer substrate in a roll form, a roll-to-roll deposition apparatus wound in a roll form may be used.

The reaction gas is, for example, steam (H ₂ O), hydrogen peroxide (H ₂ O ₂ ), oxygen (O ₂ ), ozone (O ₃ ), hydrogen (H ₂ ), nitrogen (N ₂ ), hydrazine (N ₂ H ₄ ), ammonia (NH ₃ ), and may be one or more selected from the group consisting of silane, but is not limited thereto.

As a specific example, when the deposition of the imdium precursor compound is performed in the presence of a reactive gas such as water vapor, oxygen, or ozone, an indium-containing metal oxide thin film may be formed.

As another specific example, when the deposition of the imdium precursor compound is performed in the presence of a reactive gas such as hydrogen or silane, an indium-containing metal thin film may be formed.

As another specific example, when the deposition of the imdium precursor compound is performed in the presence of a reactive gas such as ammonia or hydrazine, an indium-containing metal nitride thin film may be formed.

In the method of manufacturing the thin film, the injection time of the indium precursor compound may be, for example, 1 to 50 seconds, 1 to 30 seconds, or 1 to 20 seconds, and within this range, the thickness uniformity of the thin film is improved so that it is uniform even on a substrate of a complex shape. One thin film can be easily manufactured.

In the method of manufacturing the thin film, the injection time of the reaction gas may be, for example, 1 to 60 seconds, 1 to 50 seconds, or 1 to 30 seconds, and the physical properties of the thin film due to excellent coating properties and uniform coating properties within this range. There is an improvement effect.

The substrate is, for example, glass, silicon, metal polyester (Polyester, PE), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyetherimide ( Polyetherimide, PEI), polyethersulfone (PES), polyetheretherketone (PEEK), and polyimide (PI) may be formed by including at least one selected from the group consisting of, no.

Indium-containing thin film

The indium-containing thin film of the present invention includes a substrate and a thin film layer formed on the substrate, and the thin film layer may include the indium precursor compound of the present invention, and the thin film has excellent film thickness uniformity and thermal stability.

The thin film layer may be, for example, one or more selected from the group consisting of an indium oxide thin film, an indium thin film, and an indium nitride thin film, and preferably may be an indium oxide thin film, which has an advantage of being deposited with a uniform thickness over a large area.

The thin film layer may have a single layer structure or a multilayer structure, for example.

The single-layer structure may be formed by depositing an indium precursor compound of the present substrate as an example, or may be formed by depositing a mixture of two or more selected from the group consisting of the indium precursor compound, a gallium precursor, and a zinc precursor, and preferably indium It may be formed by depositing a mixture of a precursor compound and a gallium precursor, a mixture of an indium precursor compound and a zinc precursor, or a mixture of an indium precursor compound, a gallium precursor, and a zinc precursor.

The multi-layered structure may be a stacked structure by sequentially depositing the indium precursor compound of the present substrate and other precursors, as a specific example, by depositing at least one of a gallium precursor and a zinc precursor and the indium precursor compound on a substrate. It may be a stacked structure.

As a specific example, the thin film layer may be an IGZO thin film, and an In:Ga:Zn composition ratio of the IGZO thin film may be 0.1 to 1: 0.1 to 1: 0.1 to 1, and preferably 1:1: 1.

For example, the indium-containing thin film may have a specific resistance value of 1×10 ^-5 to 1×10 ² Ωcm, 1×10 ^-4 to 1×10 ² Ωcm, or 1×10 ^-3 to 10 Ωcm.

Hereinafter, a preferred embodiment is presented to aid the understanding of the present invention, but the following examples are only illustrative of the present invention, and it is obvious to those skilled in the art that various changes and modifications are possible within the scope and spirit of the present invention, It is natural that such modifications and modifications fall within the appended claims.

[Production Example]

Manufacturing example One

To a solution prepared by adding 10 g (62.5 mmol) of anhydrous trimethyl indium and 200 ml of toluene samgu to a 250 ml Schlenk flask, and cooling to -20°C, 6.91 g (31.3 mmol) of trichloroindium was slowly added dropwise and stirred for 30 minutes. After that, the temperature was gradually raised and stirred at room temperature. After the reaction was completed, the solvent was removed using vacuum at room temperature to obtain 16.91 g (93.8 mmol) of dimethylchloroindium as a white solid having a structure as shown in the following formula 1-1.

Manufacturing example 2

To a solution prepared by adding 50 g (347.12 mmol) of 2-chloro-N,N-dimethylethylamine and 50 mL of distilled water to a 500 mL Schlenk flask and cooling to -20 °C, tert-butyl amine 253.88 g (3.47 mol) ) Was slowly added dropwise and stirred for 30 minutes, and then the temperature was gradually raised and stirred at room temperature for 1 hour. Then, the temperature was raised to 80° C., stirred for 1 hour, and then the temperature was gradually lowered to room temperature. After the reaction was completed, the flask was cooled to -20 °C, and a solution of 20.83 g (520.68 mmol) of NaOH diluted in 50 mL of distilled water was slowly added dropwise, and the temperature was gradually raised and stirred at room temperature for 1 hour. After extracting the obtained solution three times with 150 mL of hexane, the hexane layer was removed using vacuum at 100 torr at room temperature, and then N,N- having a structure as shown in Equation 2-1 as a colorless liquid using a vacuum distillation method. Dimethylamino-N'-tert-butylethylene diamine 35 g (242.61 mmol) was obtained.

¹ H NMR (C6D6, 400 MHz): δ 1.06 (s, 9H), 1.21 (br, 1H), 2.06 (s, 6H), 2.33 (t, 2H), 2.56 (q, 2H).

Manufacturing example 3

To a solution prepared by adding 50 g (316.31 mmol) of 2-chloro-N,N-dimethylpropylamine and 50 mL of distilled water to a 500 mL Schlenk flask and cooling to -20 °C, tert-butyl amine 253.88 g (3.47 mol) ) Was slowly added dropwise and stirred for 30 minutes, and then the temperature was gradually raised and stirred at room temperature for 1 hour. Then, the temperature was raised to 80° C., stirred for 1 hour, and then the temperature was gradually lowered to room temperature. After the reaction was completed, the flask was cooled to -20 °C, and a solution of 20.83 g (520.68 mmol) of NaOH diluted in 50 mL of distilled water was slowly added dropwise, and the temperature was gradually raised and stirred at room temperature for 1 hour. After extracting the obtained solution three times with 150 mL of hexane, the hexane layer was removed using vacuum at 100 torr at room temperature, and then N,N- having a structure as shown in Equation 2-2 as a colorless liquid using a vacuum distillation method. Dimethylamino-N'-tert-butylpropylene diamine 30 g (189.53 mmol) was obtained.

¹ H NMR (C6D6, 400 MHz): δ 0.51 (br, 1H), 1.04 (S, 9H), 1.57 (m, 2H), 2.11 (S, 6H), 2.27 (t, 2H), 2.56 (m, 2H).

[Example]

Example One

1. Preparation of indium precursor compound

Put 50 mL of toluene in a 250 mL Schlenk flask, 13.86 mL of n-butyllithium (2.5M in hexane) solution, and then cool to -20 ℃ N,N-dimethylamino-N'-tert-butylethylene diamine 5 g (34.66 mmol) was slowly added dropwise, gradually raised to room temperature, and stirred for 1 hour. After the resulting solution was cooled to -20 °C, 6.25 g (34.66 mmol) of dimethylchloroindium prepared in Preparation Example 1 was slowly added. When the addition was complete, the temperature of the flask was gradually raised and stirred at room temperature for 1 hour, then the temperature was raised to 110° C., stirred for 1 hour, and then the temperature was gradually lowered to room temperature. After the reaction was completed, the solid in the obtained solution was filtered, and the solvent was removed using a vacuum to obtain a pale yellow liquid. The liquid was distilled under vacuum to remove impurities, and then a transparent colorless indium precursor compound of Formula 3-1 was obtained. The indium precursor compound was not ignited or decomposed even when exposed to the atmosphere.

2. Thin film deposition method

Four silicon substrates were prepared whose temperatures were adjusted to 200°C, 250°C, 300°C, and 350°C. Subsequently, the indium precursor compound 3-1 prepared in Preparation Example was put in a stainless steel bubbler container and vaporized at a temperature of 30 to 80°C. Using a time division atomic layer deposition apparatus, the precursor for thin film formation, an inert gas, oxygen plasma, and an inert gas were sequentially repeatedly supplied for 3 seconds, 6 seconds, 3 seconds, and 6 seconds, respectively, to form an In ₂ O ₃ thin film. At this time, as an inert gas, N ₂ , Ar, He, etc. were used. The thin film growth rate (growth per cycle) on the silicon substrate was 0.09 to 0.11 nm/cycle.

Example 2

1. Preparation of indium precursor compound

Put 50 mL of toluene in a 250 mL Schlenk flask, and 13.86 mL of n-butyllithium (2.5M in hexane) solution, and then cool to -20°C, while N,N-dimethylamino-N'-tert-butylpropylene diamine 5 g (34.66 mmol) was slowly added dropwise, gradually raised to room temperature, and stirred for 1 hour. After the resulting solution was cooled to -20 °C, 6.25 g (34.66 mmol) of dimethylchloroindium prepared in Preparation Example 1 was slowly added. After the addition was completed, the temperature of the flask was gradually raised and stirred at room temperature for 1 hour, and then the temperature was raised to 110° C., stirred for 1 hour, and then the temperature was gradually lowered to room temperature. After the reaction was completed, the solid in the obtained solution was filtered, and the solvent was removed using a vacuum to obtain a pale yellow liquid, and the liquid was vacuum distilled to remove impurities, and then a transparent colorless indium precursor compound of Formula 3-2 was obtained. The indium precursor compound was not ignited or decomposed even when exposed to the atmosphere.

2. Thin film deposition method

It was carried out in the same manner as in Example 1, except that the indium precursor compound 3-2 was used.

Comparative example One

Except for using the indium precursor [3-(Dimethylamino)propryl](dimethyl)indium (DADI), it was carried out in the same manner as in Example 1 above.

[Test Example]

The properties of the thin films prepared in Examples 1 to 2 and Comparative Example 1 were measured, and as a result, when the indium precursors of Examples 1 to 2 were deposited on a large area substrate at high temperature, they had a high deposition rate and a uniform thickness. A thin film was prepared.

On the other hand, when the indium precursor of Comparative Example 1 was used, the deposition rate was decreased compared to Examples 1 to 2, and a thin film having a non-uniform thickness was produced.

Claims (9)

Indium precursor compound, characterized in that represented by the following formula (1).
[Formula 1]

(In Formula 1, R ₁ to R ₂ are hydrogen, or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R ₃ to R ₄ are independently hydrogen, halogen, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. , And a substituted or unsubstituted aryl group having 1 to 10 carbon atoms, X is a hetero atom, n is an integer of 1 to 5, and m is 1 or 2.)
The method of claim 1,
In Formula 1, R ₁ to R ₂ are independently hydrogen, or an indium precursor compound, characterized in that a substituted or unsubstituted 1 to 6 alkyl group.
The method of claim 1,
In Formula 1, R ₃ to R ₄ are independently methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, tert-butyl group, n-pentyl group , iso-pentyl group, neo-pentyl group, sec-pentyl group, tert-pentyl group, n-hexyl group, iso-hexyl group, sec-hexyl group, and tert-hexyl group. Indium precursor compound.
The method of claim 1,
In Formula 1, n is an indium precursor compound, characterized in that an integer of 1 to 5.
A method of manufacturing a thin film, comprising the step of forming a thin film by depositing the indium precursor compound according to any one of claims 1 to 4 on a substrate.
The method of claim 5,
The method of manufacturing the thin film comprises depositing at least one of a gallium precursor and a zinc precursor and the indium precursor compound on a substrate to form a thin film.
The method of claim 5,
The deposition method of a thin film, characterized in that the chemical vapor deposition (CVD) or atomic layer deposition (ALD).
An indium-containing thin film comprising a substrate and a thin film layer formed on the substrate, wherein the thin film layer comprises the indium precursor compound according to any one of claims 1 to 4.
The method of claim 8,
The indium-containing thin film is at least one selected from the group consisting of an indium oxide thin film, an indium thin film, and an indium nitride thin film.

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