KR20200106771A - Cleaning agent for removing solder flux and cleaning method using the cleaning agent - Google Patents
Cleaning agent for removing solder flux and cleaning method using the cleaning agent Download PDFInfo
- Publication number
- KR20200106771A KR20200106771A KR1020190025405A KR20190025405A KR20200106771A KR 20200106771 A KR20200106771 A KR 20200106771A KR 1020190025405 A KR1020190025405 A KR 1020190025405A KR 20190025405 A KR20190025405 A KR 20190025405A KR 20200106771 A KR20200106771 A KR 20200106771A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- cleaning agent
- solder flux
- cleaning
- removing solder
- Prior art date
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- 230000004907 flux Effects 0.000 title claims abstract description 75
- 238000004140 cleaning Methods 0.000 title claims abstract description 74
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 65
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 24
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C11D11/0047—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Detergent Compositions (AREA)
Abstract
Description
본 발명은 땜납 플럭스를 제거하기 위한 세정제 조성물 및 이를 이용하여 땜납 플럭스를 제거하기 위한 세정방법에 관한 것이다.The present invention relates to a cleaning agent composition for removing solder flux and a cleaning method for removing solder flux using the same.
전자 부품 등의 제조에서 두 개의 금속을 맞붙이기 위하여 통상적으로 납땜이 이루어진다. 예컨대, 프린트 기판 등에 전자 부품 등을 탑재하고 와이어 본딩 등의 방법으로 전자 부품의 배선과 기판의 전극을 서로 전기적으로 연결하고 접합시키기 위하여 납땜이 활용된다. 본 명세서에 있어서 '납땜'은 리플로 방식 및 플로 방식의 납땜을 모두 포함한다.In the manufacture of electronic components, etc., soldering is usually performed to bond two metals together. For example, soldering is used to mount an electronic component on a printed circuit board or the like and electrically connect and bond the wiring of the electronic component and the electrode of the board by a method such as wire bonding. In the present specification, "soldering" includes both reflow and flow soldering.
이러한 납땜에 사용되는 재료에는, 저융점의 금속인 땜납 외에, 용해한 금속면이 대기와 닿는 것을 방해할 목적으로 금속의 표면에 용해한 염류에 의한 얇은 층을 만들기 위해 사용되는 혼합염인 플럭스(flux)가 포함된다. 플럭스는 납땜이 수행되는 대상물 및 땜납 표면을 청정화하고 납땜시 재산화를 방지하는 기능을 수행하는 것으로서, 전극이나 배선 등의 금속과 땜납 금속의 접속을 방해하는 산화물을 제거함으로써 상기 접속을 촉진시킨다. 본 명세서에 있어서, '플럭스'는 로진 또는 로진 유도체를 함유하는 로진계 플럭스에 한정되지 않으며 로진을 함유하지 않는 수용성 플럭스도 포함한다. 그리고 '땜납 플럭스'는 땜납과 플럭스의 혼합물을 가리킨다.In addition to the low melting point metal solder, the materials used for such soldering include flux, which is a mixed salt used to create a thin layer of dissolved salts on the surface of the metal for the purpose of preventing the molten metal surface from contacting the atmosphere. Is included. The flux performs a function of cleaning an object to be soldered and a solder surface and preventing reoxidation during soldering, and promotes the connection by removing oxides that interfere with the connection between metals such as electrodes or wirings and the solder metal. In the present specification, "flux" is not limited to rosin-based fluxes containing rosin or rosin derivatives, and includes water-soluble fluxes that do not contain rosin. And'solder flux' refers to a mixture of solder and flux.
플럭스는 통상적으로 로진이나 로진 유도체 등과 같은 기본재, 유기산(올레익산, 유산 등), 무기물(염화아연), 유무기물 복합체 등의 활성제 및 플럭스 점도 조정을 위한 알코올 등의 용제로 구성된다. 이러한 플럭스의 주요 성분 중 용제는 휘발성이 있어 기화되지만, 기본재와 활성제 등은 플럭스 잔사로 남게 된다. '플럭스 잔사'는 땜납 플럭스를 사용하여 땜납 범프를 형성하거나 또는 납땜을 한 후에 기판 등에 잔존하는 플럭스 유래의 잔사를 가리킨다. 예를 들어, 회로 기판 상에 전자 부품을 적층하여 탑재시키면 상기 회로 기판과 상기 전자 부품 사이에 공간(간극)이 형성되는데, 리플로 방식 등을 이용하여 납땜을 하고 나면 플럭스 잔사는 이 간극에 잔존할 수 있다. The flux is usually composed of a basic material such as rosin or rosin derivatives, an activator such as an organic acid (oleic acid, lactic acid, etc.), an inorganic material (zinc chloride), an organic-inorganic complex, and a solvent such as an alcohol for adjusting the viscosity of the flux. Among the major components of the flux, the solvent is volatile and vaporizes, but the base material and activator remain as flux residues. The "flux residue" refers to a flux-derived residue remaining on a substrate or the like after forming a solder bump using a solder flux or soldering. For example, when electronic components are stacked and mounted on a circuit board, a space (gap) is formed between the circuit board and the electronic component. After soldering using a reflow method, the flux residue remains in this gap. can do.
이러한 플럭스 잔사 중의 일부가 공기 중의 수분과 접촉하게 되면 백색을 띄며 서서히 접합 부위를 부식시키는 백화 현상이 발생한다. 따라서 납땜이 이루어진 후에는 기판과 전자 부품 사이의 간극이나 부품 표면에 존재하는 플럭스 잔사를 제거하기 위한 세정 공정이 필수적으로 이루어지게 된다. When some of the flux residues come into contact with moisture in the air, they become white and whitening occurs, which gradually corrodes the joint. Therefore, after soldering is performed, a cleaning process is essentially performed to remove the gap between the substrate and the electronic component or the flux residue existing on the component surface.
땜납 플럭스, 즉 플럭스 잔사를 제거하기 위한 세정제에 관해서 다양한 조성의 세정제가 제안되었다. 예를 들어, 한국공개특허 제2007-0020144호, "땜납 플럭스 제거용 세정제 및 땜납 플럭스의 세정방법"(특허문헌 1)에는, 물과 계면활성제를 실질적으로 포함하지 않으며, 글리콜 화합물, 벤질알코올 및 아미노알코올을 함유하는 땜납 플럭스 제거용 세정제가 개시되어 있으며, 한국공개특허 제2008-0114718호, "무연 땜납 플럭스 제거용 세정제 조성물, 무연 땜납 플럭스제거용 세척제 및 무연 땜납 플럭스의 제거방법"(특허문헌 2)에는, 폴리옥시알킬렌인산에스테르계 계면활성제, 금속 킬레이트제 및 비할로겐계 유기용제를 함유하는 무연땜납 플럭스 제거용 세정제 조성물이 개시되어 있다. 그리고 한국등록특허 제0907568호, "땜납 플럭스 제거용 세정제 및 땜납 플럭스 세정 방법"(특허문헌 3)에는 알콕시 알킬 알코올 및 알콕시 프로판을 함유하는 세정제 조성물이 개시되어 있다.Various compositions of cleaning agents have been proposed for the solder flux, that is, cleaning agents for removing flux residues. For example, in Korean Patent Laid-Open No. 2007-0020144, "A cleaning agent for removing solder flux and a method for cleaning solder flux" (Patent Document 1), water and a surfactant are substantially not included, and glycol compounds, benzyl alcohol, and A cleaning agent for removing solder flux containing amino alcohol is disclosed, and Korean Patent Publication No. 2008-0114718, "Cleaning agent composition for removing lead-free solder flux, cleaning agent for removing lead-free solder flux, and method for removing lead-free solder flux" (Patent Document In 2), a detergent composition for removing a lead-free solder flux containing a polyoxyalkylene phosphate-based surfactant, a metal chelating agent, and a non-halogen-based organic solvent is disclosed. In addition, Korean Patent No. 0907568, "A cleaning agent for removing solder flux and a method for cleaning solder flux" (Patent Document 3) discloses a cleaning agent composition containing an alkoxy alkyl alcohol and an alkoxy propane.
최근 저소비 전력, 고속 처리 등을 위하여, 전자 부품이 고성능화 및 소형화되고 있다. 이에 따라서, 전자 부품을 실장하기 위한 프린트 배선판이나 세라믹 기판 등은, 금속층이 표면에 노출되는 등 구조가 변화하고 있을 뿐만 아니라 기판과 전자 부품 사이의 간극이 좁아지고 있다. 그 결과, 표면에 노출되는 금속층에 손상을 입히지 않으면서도, 좁아진 간극에 잔존하는 땜납 플럭스를 효율적으로 제거하기 위한 세정제가 요구되고 있다. In recent years, for low power consumption and high-speed processing, electronic components have been improved in performance and size. Accordingly, in a printed wiring board or a ceramic substrate for mounting an electronic component, not only the structure of the metal layer is exposed on the surface, etc. but also the gap between the substrate and the electronic component is narrowing. As a result, there is a need for a cleaning agent for efficiently removing the solder flux remaining in the narrowed gap without damaging the metal layer exposed on the surface.
그런데, 세정력을 강화하기 위한 전술한 기존의 세정제들은 알카리 세정제들로서, 전자 부품 패키지의 표면에 노출되는 고부식성의 금속, 예컨대 구리와 알루미늄 등의 변색 및 부식을 야기하고 있다. 이는 높은 신뢰성을 요구하는 전자 부품의 제작에 문제를 일으킨다. 따라서 좁아진 간극에 잔존하는 땜납 플럭스를 제거할 수 있는 우수한 세정력을 유지하면서도 노출 금속의 부식을 야기하지 않는 세정제의 개발이 요구되고 있다.However, the above-described conventional cleaners for enhancing cleaning power are alkaline cleaners and cause discoloration and corrosion of highly corrosive metals such as copper and aluminum exposed to the surface of an electronic component package. This causes a problem in the manufacture of electronic components that require high reliability. Accordingly, there is a need to develop a cleaning agent that does not cause corrosion of exposed metal while maintaining excellent cleaning power capable of removing the solder flux remaining in the narrowed gap.
본 발명이 해결하고자 하는 하나의 과제는, 구리나 알루미늄 등의 금속에 대한 부식을 유발하지 않으면서도 우수한 세정력을 보이는 땜납 플럭스 제거용 세정제와 이를 이용한 세정방법을 제공하는 것이다.One problem to be solved by the present invention is to provide a cleaning agent for removing solder flux and a cleaning method using the same, which does not cause corrosion to metals such as copper or aluminum and exhibits excellent cleaning power.
전술한 과제를 해결하기 위한 본 발명의 일 실시예에 따른 땜납 플럭스 제거용 세정제는, 상온에서 수용액인 상기 세정제 1L를 기준으로, 10 ~ 100g의 아민계 화합물, 피에이치(PH) 조정제, 10 ~ 50g의 안정제 및 0.01 ~ 50g의 계면 활성제를 포함하고, 상기 피에이치 조정제는 상기 세정제가 중성 범위의 피에이치를 갖는 양만큼 포함되어 있다. 그리고 상기 땜납 플러스 제거용 세정제는, 세정제 1L를 기준으로, 10 ~ 50g의 세정력 강화용 첨가제를 더 포함할 수 있다.The detergent for removing the solder flux according to an embodiment of the present invention for solving the above-described problem, based on 1L of the detergent, which is an aqueous solution at room temperature, is 10 to 100 g of an amine compound, a PH regulator, 10 to 50 g Of the stabilizer and 0.01 ~ 50g of a surfactant, and the PH modifier is included in an amount of the detergent having a PH in a neutral range. And the cleaning agent for removing the solder plus may further include an additive for enhancing cleaning power of 10 to 50 g based on 1 L of the cleaning agent.
상기 실시예의 일 측면에 의하면, 상기 중성 범위의 피에이치는 6 ~ 8일 수 있다. According to an aspect of the embodiment, the pH value in the neutral range may be 6 to 8.
상기 실시예의 다른 측면에 의하면, 상기 아민계 화합물은 에틸렌디아민테트라메틸렌인산, 디에틸렌트리아민펜타메틸렌인산, 아미노트리메틸렌인산, 모노에탈온아민, 디에탄올아민, 트리에탄올아민, 모노프로한올아민, 디프로판올아민, 트리프로판올아민, 메틸렌디아민, 에틸렌디아민, 테트라메틸렌디아민, 펜타메닐렌디아민, 헥사메틸렌디아민, 디에틸렌트리아민, 테트라에틸렌펜타민. 펜타에틸렌헥사민, 헥사에틸렌헵타민, 시나밀아민 및 사이클로헥실아민으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함할 수 있다. According to another aspect of the above embodiment, the amine-based compound is ethylenediaminetetramethylenephosphoric acid, diethylenetriaminepentamethylenephosphate, aminotrimethylenephosphate, monoethanolamine, diethanolamine, triethanolamine, monoprophanolamine, di. Propanolamine, tripropanolamine, methylenediamine, ethylenediamine, tetramethylenediamine, pentamenylenediamine, hexamethylenediamine, diethylenetriamine, tetraethylenepentamine. It may include at least one compound selected from the group consisting of pentaethylenehexamine, hexaethyleneheptamine, cinnamylamine, and cyclohexylamine.
상기 실시예의 또 다른 측면에 의하면, 상기 피에이치 조정제는 메탄술폰산, 에탄술폰산, 1-프로판술폰산, 2-프로판술폰산, 1-부탄술폰산, 2-부탄술폰산, 펜탄술폰산, 헥산술폰산, 데칸술폰산, 아세트산, 프로피온산, 부티르산, 시트르산, 타르타르산, 글루콘산, 술포숙신산, 트리플루오로아세트산, 황산, 질산 및 인산으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함할 수 있다.According to another aspect of the above embodiment, the PH modifier is methanesulfonic acid, ethanesulfonic acid, 1-propanesulfonic acid, 2-propanesulfonic acid, 1-butanesulfonic acid, 2-butanesulfonic acid, pentanesulfonic acid, hexanesulfonic acid, decanesulfonic acid, acetic acid, Propionic acid, butyric acid, citric acid, tartaric acid, gluconic acid, sulfosuccinic acid, trifluoroacetic acid, sulfuric acid, nitric acid and phosphoric acid may include one or more compounds selected from the group consisting of.
상기 실시예의 또 다른 측면에 의하면, 상기 안정제는 에틸렌디아민테트라아세트산, 에틸렌디아민테트라아세트산 이나트륨염, 히드록시에틸에틸렌디아민트리아세트산, 디에틸렌트리아민 펜타아세트산, 트리에틸렌테트라민헥사아세트산, 에틸렌디아민테르라프로리온산, 니트릴로트리아세트산, 이미노디아세트산, 이미노디프로피온산, 글루타민산, 오르티닌 및 시스테인으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함할 수 있다. According to another aspect of the above embodiment, the stabilizer is ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid disodium salt, hydroxyethylethylenediaminetriacetic acid, diethylenetriamine pentaacetic acid, triethylenetetraminehexaacetic acid, ethylenediamine tere It may include one or more compounds selected from the group consisting of laproionic acid, nitrilotriacetic acid, iminodiacetic acid, iminodipropionic acid, glutamic acid, ortinine and cysteine.
상기 실시예의 또 다른 측면에 의하면, 상기 계면활성제는 알킬 황산염, 폴리옥시에틸렌 알킬 에테르 황산염, 폴리 옥시에틸렌 알킬페닐에테르 황산염, 알킬벤젠술폰산염, 모노 내지 트리알킬아민염, 디메틸디알킬암모늄염, 트리메틸알킬암모늄염, C1 내지 C20 알카놀, 페놀, 나프톨, 비스페놀류, C1 내지 C25 알킬페놀, 아릴알킬페놀, C1 내지 C25 알킬나프톨, C1 내지 C25 알콕시 인산(염), 소르비탄 에스테르, 폴리알킬렌글리콜, C1 내지 C22 지방족 아미드 등에 에틸렌옥사이드 및 프로필렌옥사이드를 2 내지 300몰 부가 축합시킨 것, 카르복시 베타인, 술포베타인, 이미다졸린 베타인 및 아미카르복실산으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함할 수 있다. According to another aspect of the above embodiment, the surfactant is an alkyl sulfate, polyoxyethylene alkyl ether sulfate, polyoxyethylene alkylphenyl ether sulfate, alkylbenzenesulfonate, mono to trialkylamine salt, dimethyldialkylammonium salt, trimethylalkyl Ammonium salt, C1 to C20 alkanol, phenol, naphthol, bisphenols, C1 to C25 alkylphenol, arylalkylphenol, C1 to C25 alkylnaphthol, C1 to C25 alkoxy phosphoric acid (salt), sorbitan ester, polyalkylene glycol, C1 To C22 aliphatic amide, etc., ethylene oxide and propylene oxide condensed by addition of 2 to 300 moles, carboxy betaine, sulfobetaine, imidazoline betaine, and one or more compounds selected from the group consisting of amicarboxylic acid. have.
상기 실시예의 또 다른 측면에 의하면, 상기 첨가제는 1.3-디메틸티오오소, 트리메틸티오요소, 디에틸티오요소, N,N-디이소프로필티오요소, 알릴티오요소, 아세틸티오요소, 애틸렌티오요소, 1,3-디페닐티오요소, 이산화티오요소, 2,2' 디티오아닐린, 디피리딜디술피드, 티오글리콜산, B-티오클리콜, 비스(도데카에틸렌글리콜)티오에테르, 1,2 비스(2-히드록시에틸티오)에탄, 1,4-비스(2-히드록시에틸티오)부탄, 티오글리콜, 티오클리콜산 및 메르캅토숙신산으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함할 수 있다.According to another aspect of the above embodiment, the additive is 1.3-dimethylthioso, trimethylthiourea, diethylthiourea, N,N-diisopropylthiourea, allylthiourea, acetylthiourea, atylenethiourea, 1,3-diphenylthiourea, thiourea dioxide, 2,2' dithioaniline, dipyridyldisulfide, thioglycolic acid, B-thioglycol, bis(dodecaethylene glycol)thioether, 1,2 It may include one or more compounds selected from the group consisting of bis(2-hydroxyethylthio)ethane, 1,4-bis(2-hydroxyethylthio)butane, thioglycol, thioglycolic acid, and mercaptosuccinic acid.
상기한 과제를 해결하기 위한 본 발명의 일 실시예에 따른 땜납 플럭스를 제거하기 위한 세정방법은, 상온에서 수용액인 상기 세정제 1L를 기준으로, 10 ~ 100g의 아민계 화합물, 피에이치(PH) 조정제, 10 ~ 50g의 안정제, 0.01 ~ 50g의 계면 활성제 및/또는 10 ~ 50g의 세정력 강화용 첨가제를 포함하는 땜납 플럭스 제거용 세정제를 준비하는 단계, 상기 세정제의 온도가 55 ~ 65℃가 되도록 가열하는 단계, 가열된 상기 세정제에 피세정물을 침적시키는 단계 및 소정의 시간 경과 후에 상기 피세정물을 물로 세척한 다음 건조하는 단계를 포함한다.The cleaning method for removing the solder flux according to an embodiment of the present invention for solving the above problems is, based on 1L of the cleaning agent which is an aqueous solution at room temperature, 10 to 100 g of an amine compound, a PH regulator, Preparing a cleaning agent for removing solder flux comprising a stabilizer of 10 to 50 g, a surfactant of 0.01 to 50 g and/or an additive for enhancing cleaning power of 10 to 50 g, heating the cleaning agent to a temperature of 55 to 65°C And immersing the object to be cleaned in the heated detergent, and washing the object to be cleaned with water and then drying the object after a predetermined period of time.
전술한 본 발명의 실시예에 땜납 플럭스 제거용 세정제에 의하면, 금속 부식을 야기하는 알칼리 세정액 대신에 중성 영역의 세정액을 사용함으로, 표면에 노출되는 구리나 알루미늄 등과 같은 금속의 부식을 방지할 수 있다. 또한, 세정력 강화용 첨가제를 세정제에 첨가함으로써, 중성 영역의 세정제를 사용함에 따른 세정력 약화를 보완하여 세정력도 강화시킬 수가 있다.According to the cleaning agent for removing the solder flux according to the embodiment of the present invention, by using the cleaning solution in the neutral region instead of the alkali cleaning solution causing metal corrosion, it is possible to prevent corrosion of metals such as copper or aluminum exposed to the surface. . In addition, by adding an additive for enhancing cleaning power to the cleaning agent, it is possible to enhance cleaning power by compensating for weakening of cleaning power due to the use of the cleaning agent in the neutral region.
도 1은 본 발명의 일 실시예에 따른 땜납 플럭스의 제거를 위한 세정방법을 보여 주는 흐름도이다.
도 2는 본 발명에 따른 땜납 플럭스 제거용 세정제의 세정력 및 금속 부식 여부의 테스트를 위하여 제조된 기판을 보여 주는 사진이다.
도 3은 세정력 평가를 위하여 실험예 1-5와 비교예 1-3의 세정제를 각각 사용하여 세정된 테스트 기판의 표면을 촬영한 사진이다.
도 4는 알루미늄의 부식 여부에 대한 평가를 위하여 실험예 1-5와 비교예 1-3의 세정제를 각각 사용하여 세정된 알루미늄 시편의 표면을 촬영한 사진이다.
도 5는 구리의 부식 여부에 대한 평가를 위하여 실험예 1-5와 비교예 1-3의 세정제를 각각 사용하여 세정된 구리 시편의 표면을 촬영한 사진이다.1 is a flowchart showing a cleaning method for removing solder flux according to an embodiment of the present invention.
FIG. 2 is a photograph showing a substrate manufactured for testing whether a cleaning agent for removing solder flux according to the present invention has a cleaning power and metal corrosion.
3 is a photograph of a surface of a test substrate cleaned by using the cleaning agents of Experimental Example 1-5 and Comparative Example 1-3, respectively, for evaluation of cleaning power.
4 is a photograph of the surface of an aluminum specimen cleaned using the cleaning agents of Experimental Example 1-5 and Comparative Example 1-3, respectively, in order to evaluate whether aluminum is corroded.
5 is a photograph of a surface of a copper specimen cleaned using the cleaning agents of Experimental Example 1-5 and Comparative Example 1-3, respectively, in order to evaluate whether copper is corroded.
이하, 도면을 참조하여 본 발명의 바람직한 실시형태 및 실시예를 설명한다. 다만, 이하의 실시형태 및 실시예는 본 발명의 바람직한 구성을 예시적으로 나타내는 것일 뿐이며, 본 발명의 범위는 이들 구성에 한정되지 않는다. 그리고 이하의 설명에 있어서, 장치의 하드웨어 구성 및 소프트웨어 구성, 처리 흐름, 제조조건, 크기, 재질, 형상 등은, 특히 특정적인 기재가 없는 한, 본 발명의 범위를 이것으로 한정하려는 취지인 것은 아니다. Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. And in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are not intended to limit the scope of the present invention to this, unless specifically stated otherwise. .
본 발명에 따른 땜납 플럭스 제거용 세정제는, 피에이치(PH)가 중성 범위, 예컨대 5 ~ 9, 바람직하게는 6 ~ 8의 범위에 있는 중성의 수용액이다. 이에 의하면, 구리나 알루미늄 등과 같은 금속이 노출되는 전자 부품을 세정하는 경우에도 손상이 발생하는 것을 방지할 수 있다. 이를 위한 본 발명의 일 실시예에 따른 땜납 플럭스 제거용 세정제는 아민계 화합물, 피에이치 조정제, 안정제 및 계면활성제를 포함한다. 이러한 세정제의 피에이치는 첨가되는 피에이치 조정제의 양을 적절하게 조절함으로써 조정될 수 있다.The cleaning agent for removing the solder flux according to the present invention is a neutral aqueous solution having a pH (PH) in a neutral range, such as 5 to 9, preferably 6 to 8. Accordingly, it is possible to prevent damage from occurring even when cleaning an electronic component exposed to a metal such as copper or aluminum. For this purpose, the cleaning agent for removing the solder flux according to an embodiment of the present invention includes an amine-based compound, a PH regulator, a stabilizer, and a surfactant. The pH of such a cleaning agent can be adjusted by appropriately adjusting the amount of the added pH adjusting agent.
또한, 본 발명의 일 실시예에 따른 땜납 플럭스 제거용 세정제는 세정력 향상을 위한 첨가물, 즉 세정력 향상 첨가제를 추가로 포함할 수 있다. 세정력 향상 첨가제는 중성 세정제를 사용함에 따른 세정력 약화를 보완함으로써, 좁아진 간극에 잔류하는 땜납 플럭스의 보다 효율적으로 제거할 수 있도록 한다. In addition, the cleaning agent for removing the solder flux according to an embodiment of the present invention may further include an additive for improving cleaning power, that is, an additive for improving cleaning power. The cleaning power improving additive compensates for the weakening of cleaning power due to the use of a neutral cleaning agent, thereby enabling more efficient removal of the solder flux remaining in the narrowed gap.
상기한 아민계 화합물로서는 에틸렌디아민테트라메틸렌인산, 디에틸렌트리아민펜타메틸렌인산, 아미노트리메틸렌인산, 모노에탈온아민, 디에탄올아민, 트리에탄올아민, 모노프로한올아민, 디프로판올아민, 트리프로판올아민, 메틸렌디아민, 에틸렌디아민, 테트라메틸렌디아민, 펜타메닐렌디아민, 헥사메틸렌디아민, 디에틸렌트리아민, 테트라에틸렌펜타민. 펜타에틸렌헥사민, 헥사에틸렌헵타민, 시나밀아민 및 사이클로헥실아민으로 이루어진 그룹에서 선택된 하나 또는 그 이상의 화합물을 포함할 수 있다.Examples of the amine compounds described above include ethylenediaminetetramethylenephosphate, diethylenetriaminepentamethylenephosphate, aminotrimethylenephosphate, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, dipropanolamine, tripropanolamine, Methylenediamine, ethylenediamine, tetramethylenediamine, pentamenylenediamine, hexamethylenediamine, diethylenetriamine, tetraethylenepentamine. It may include one or more compounds selected from the group consisting of pentaethylenehexamine, hexaethyleneheptamine, cinnamylamine, and cyclohexylamine.
이러한 아민계 화합물은 상온의 세정액 1L를 기준으로 1 ~ 300g, 보다 바람직하게는 10에서 100g이 포함된다. 하지만, 본 실시예가 여기에만 한정되는 것은 아니며, 전술한 범위보다 높거나 낮은 농도의 아민계 화합물이 또한 적합하게 사용될 수 있다. 그러나 아민계 화합물의 농도가 너무 낮으면 세정력 저하가 유발되며, 반면 농도가 너무 높으면 세정액의 안정성을 떨어뜨릴 수 있다.The amine-based compound contains 1 to 300 g, more preferably 10 to 100 g, based on 1 L of the washing liquid at room temperature. However, the present embodiment is not limited thereto, and an amine-based compound having a concentration higher or lower than the above-described range may also be suitably used. However, if the concentration of the amine-based compound is too low, the cleaning power decreases, whereas if the concentration is too high, the stability of the cleaning solution may be reduced.
상기한 피에이치 조정제는 알칼리 특성을 갖는 아민계 화합물을 포함하는 세정액을 중성화시키기 위한 것으로서, 알칸술폰산이나 지방족 카르복시산 등과 같은 산성 특성을 보이는 화합물이 사용될 수 있다. 예를 들어, 알칸술폰산으로서 메탄술폰산, 에탄술폰산, 1-프로판술폰산, 2-프로판술폰산, 1-부탄술폰산, 2-부탄술폰산, 펜탄술폰산, 헥산술폰산, 데칸술폰산 등이 사용될 수 있다. 그리고 지방족 카르복시산으로서 아세트산, 프로피온산, 부티르산, 시트르산, 타르타르산, 글루콘산, 술포숙신산, 트리플루오로아세트산 등이 사용될 수 있다. 알칸술폰산이나 지방족 카르복시산 이외에 황산, 질산, 인산 등도 사용될 수 있다. The above-described PH modifier is for neutralizing a cleaning solution containing an amine compound having alkali properties, and a compound exhibiting acidic properties such as alkanesulfonic acid or aliphatic carboxylic acid may be used. For example, as the alkanesulfonic acid, methanesulfonic acid, ethanesulfonic acid, 1-propanesulfonic acid, 2-propanesulfonic acid, 1-butanesulfonic acid, 2-butanesulfonic acid, pentanesulfonic acid, hexanesulfonic acid, decanesulfonic acid, and the like can be used. And as the aliphatic carboxylic acid, acetic acid, propionic acid, butyric acid, citric acid, tartaric acid, gluconic acid, sulfosuccinic acid, trifluoroacetic acid, and the like can be used. In addition to alkanesulfonic acid or aliphatic carboxylic acid, sulfuric acid, nitric acid, phosphoric acid, and the like may also be used.
피에이치 조정제는, 아민계 화합물을 포함하는 세정제가 중성이 되도록, 아민계 화합물의 함량에 대응하여 포함되는 함량이 적절히 조절될 수 있다. 예를 들어, 피에이치 조정제는 상기 세정제의 피에이치가 5 ~ 9의 범위, 보다 바람직하게는 6 ~ 8 범위가 되도록 함량이 조절되는 것이 바람직하다. 만일, 피에이치 조정제의 함량이 너무 과량이거나 너무 소량이어서 세정제가 중성 영역의 피에이치 범위를 벗어나면, 땜납 플럭스를 제거하기 위한 세정 공정에서 알루미늄이나 구리 등의 노출 금속에 대한 부식을 초래할 수 있다.The content of the pH modifier may be appropriately adjusted according to the content of the amine compound so that the detergent containing the amine compound becomes neutral. For example, it is preferable that the content of the PH regulator is adjusted so that the PH of the detergent is in the range of 5 to 9, more preferably in the range of 6 to 8. If the content of the pH modifier is too excessive or too small, and the cleaning agent is out of the pH range of the neutral region, it may cause corrosion to exposed metals such as aluminum or copper in the cleaning process for removing the solder flux.
상기 안정제는 아민계 화합물과 피에이지 조절제가 반응하면서 발생할 수 있는 용액 혼탁이나 슬러지 발생을 방지하기 위한 것이다. 안정제로서는 카르복시산계화말물이 사용될 수 있는데, 예를 들어 에틸렌디아민테트라아세트산, 에틸렌디아민테트라아세트산 이나트륨염, 히드록시에틸에틸렌디아민트리아세트산, 디에틸렌트리아민 펜타아세트산, 트리에틸렌테트라민헥사아세트산, 에틸렌디아민테르라프로리온산, 니트릴로트리아세트산, 이미노디아세트산, 이미노디프로피온산, 글루타민산, 오르티닌, 시스테인으로 이루어진 그룹에서 선택된 하나 또는 그 이상의 화합물이 사용될 수 있다. The stabilizer is for preventing solution turbidity or sludge that may occur while the amine-based compound and the age control agent react. As a stabilizer, a carboxylic acid-based end product may be used, for example, ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid disodium salt, hydroxyethylethylenediaminetriacetic acid, diethylenetriamine pentaacetic acid, triethylenetetraminehexaacetic acid, ethylenediamine One or more compounds selected from the group consisting of terraproionic acid, nitrilotriacetic acid, iminodiacetic acid, iminodipropionic acid, glutamic acid, ortinine, and cysteine may be used.
이러한 안정제는 상온의 세정액 1L를 기준으로, 1 ~ 100g, 보다 바람직하게는 10 ~ 50g 포함될 수 있다. 하지만, 본 실시예가 여기에만 한정되는 것은 아니며, 전술한 범위보다 높거나 또는 낮은 농도의 안정제도 적합하게 사용될 수 있다. 만일, 안정제의 농도가 너무 낮으면 세정제의 용액 안정성이 저하되며, 반면 농도가 너무 높으면 세정력 저하를 일으킬 수 있다.These stabilizers may be included from 1 to 100 g, more preferably from 10 to 50 g, based on 1L of the room temperature cleaning solution. However, the present embodiment is not limited thereto, and a stabilizer having a concentration higher or lower than the above-described range may be suitably used. If the concentration of the stabilizer is too low, the solution stability of the detergent is deteriorated, whereas if the concentration is too high, the cleaning power may decrease.
상기한 계면 활성제는 미세 패턴 사이에 잔류하는 땜납 플럭스 잔사 제거를 보다 효과적으로 이루어지도록 세정액(세정제)의 침투력 등의 개선에 기여하는 것으로서, 통상의 비이온계, 음이온계, 양쪽성, 양이온계 등의 다양한 계면 활성제가 사용될 수 있다. 음이온 계면활성제로서는, 예컨대 알킬 황산염, 폴리옥시에틸렌 알킬 에테르 황산염, 폴리 옥시에틸렌 알킬페닐에테르 황산염, 알킬벤젠술폰산염 등이 사용될 수 있다. 양이온계 계면활성제로는, 예컨대 모노 내지 트리알킬아민염, 디메틸디알킬암모늄염, 트리메틸알킬암모늄염 등이 사용될 수 있다. 비이온계 계면활성제로서는, C1 내지 C20 알카놀, 페놀, 나프톨, 비스페놀류, C1 내지 C25 알킬페놀, 아릴알킬페놀, C1 내지 C25 알킬나프톨, C1 내지 C25 알콕시 인산(염), 소르비탄 에스테르, 폴리알킬렌글리콜, C1 내지 C22 지방족 아미드 등에 에틸렌옥사이드 및 프로필렌옥사이드를 2 내지 300몰 정도 부가 축합시킨 것 등이 사용될 수 있다. 그리고 양쪽성 계면활성제로는, 카르복시 베타인, 술포베타인, 이미다졸린 베타인, 아미카르복실산 등이 사용될 수 있다. 이러한 계면 활성제는 1종이 단독으로 사용하거나 또는 2종 이상을 혼합하여 사용할 수도 있다. 이러한 계면 활성제의 농도에 대해서는 특별히 한정적이지는 않지만, 통상 상온의 세정액 1L를 기준으로 0.01 ~ 50g 정도로 포함되는 것이 바람직하다.The surfactant described above contributes to the improvement of the penetrating power of the cleaning solution (cleaning agent) so as to more effectively remove the residual solder flux remaining between the fine patterns, and is generally nonionic, anionic, amphoteric, cationic, etc. Various surfactants can be used. As anionic surfactants, for example, alkyl sulfates, polyoxyethylene alkyl ether sulfates, polyoxyethylene alkylphenyl ether sulfates, alkylbenzenesulfonates, and the like can be used. As the cationic surfactant, for example, mono to trialkylamine salts, dimethyldialkylammonium salts, trimethylalkylammonium salts, and the like can be used. Examples of the nonionic surfactant include C1 to C20 alkanol, phenol, naphthol, bisphenols, C1 to C25 alkylphenol, arylalkylphenol, C1 to C25 alkylnaphthol, C1 to C25 alkoxy phosphoric acid (salt), sorbitan ester, poly An alkylene glycol, a C1 to C22 aliphatic amide, or the like may be used by adding ethylene oxide and propylene oxide to about 2 to 300 moles. And as the amphoteric surfactant, carboxy betaine, sulfobetaine, imidazoline betaine, amicarboxylic acid, and the like may be used. These surfactants may be used singly or in combination of two or more. Although there is no particular limitation on the concentration of the surfactant, it is preferably contained in an amount of about 0.01 to 50 g based on 1 L of a washing solution at room temperature.
상기한 세정력 강화용 첨가제는 피에이치 조정제의 첨가에 따라서 본 발명의 실시예에 따른 땜납 플럭스 제거용 세정제가 중성화되면서 발생하는 세정력 저하를 막기 위한 것이다. 세정력 강화용 첨가제로는 티오요소류, 술피드류, 메르캅토류 등이 사용될 수 있다. 예를 들어, 티오요소 유도체로서는, 1.3-디메틸티오오소, 트리메틸티오요소, 디에틸티오요소, N,N-디이소프로필티오요소, 알릴티오요소, 아세틸티오요소, 애틸렌티오요소, 1,3-디페닐티오요소, 이산화티오요소 등이 사용될 수 있다. 술피드류와 메르캅토류로서는, 술피놀(surfynol), 2,2' 디티오아닐린, 디피리딜디술피드, 티오글리콜산, B-티오클리콜, 비스(도데카에틸렌글리콜)티오에테르, 1,2 비스(2-히드록시에틸티오)에탄, 1,4-비스(2-히드록시에틸티오)부탄, 티오글리콜, 티오클리콜산, 메르캅토숙신산 등이 사용될 수 있다. The above-described additive for enhancing cleaning power is to prevent a decrease in cleaning power that occurs when the cleaning agent for removing the solder flux according to the embodiment of the present invention is neutralized according to the addition of the PH regulator. Thioureas, sulfides, mercaptos, etc. may be used as additives for enhancing cleaning power. For example, as a thiourea derivative, 1.3-dimethylthioso, trimethylthiourea, diethylthiourea, N,N-diisopropylthiourea, allylthiourea, acetylthiourea, atylenethiourea, 1,3 -Diphenyl thiourea, thiourea dioxide, and the like can be used. Examples of sulfides and mercaptos include sulfinol, 2,2' dithioaniline, dipyridyl disulfide, thioglycolic acid, B-thioglycol, bis(dodecaethylene glycol)thioether, 1 ,2 bis(2-hydroxyethylthio)ethane, 1,4-bis(2-hydroxyethylthio)butane, thioglycol, thioglycolic acid, mercaptosuccinic acid, and the like can be used.
세정력 강화제 첨가제의 농도는 특별히 한정적이지는 않지만, 상온의 세정제 1L를 기준으로, 10g ~ 50g 정도가 포함되는 것이 바람직하다. 만일, 세정력 강화용 첨가제의 함량이 적으면 세정력 향상의 효과가 거의 없을 수 있으며, 반면 세정력 강화용 첨가제의 함량이 너무 많으면 세정력 향상 효과에 대비하여 불필요하게 원재료 비용의 상승을 초래한다.The concentration of the detergent enhancer additive is not particularly limited, but it is preferable that about 10g to 50g is included based on 1L of the detergent at room temperature. If the amount of the additive for enhancing cleaning power is low, the effect of improving the cleaning power may be little, whereas when the amount of the additive for enhancing cleaning power is too high, the cost of raw materials may be unnecessarily increased in preparation for the effect of improving the cleaning power.
다음으로 본 발명의 일 실시예에 따른 땜납 플럭스의 제거를 위한 세정방법에 대하여 설명한다.Next, a cleaning method for removing the solder flux according to an embodiment of the present invention will be described.
도 1은 본 발명의 일 실시예에 따른 땜납 플럭스의 제거를 위한 세정방법을 보여 주는 흐름도이다.1 is a flowchart showing a cleaning method for removing solder flux according to an embodiment of the present invention.
도 1을 참조하면, 먼저 소정의 용기에 전술한 본 발명의 일 실시예에 따른 땜납 플럭스 제거용 세정제, 예컨대 아민계 화합물, 피에이치 조정제, 안정제, 계면활성제 및 세정력 강화용 첨가제를 포함하는 세정액을 준비한다(S10). 예를 들어, 250ml의 비이커에 세정제(세정액) 약 200ml 정도를 채울 수 있다. 여기서, 본 발명의 일 실시예에 따른 땜납 플럭스 제거용 세정제의 조성에 대해서는 위에서 상세히 설명하였으므로, 여기서는 이에 대한 설명은 생략한다.Referring to FIG. 1, first, in a predetermined container, a cleaning solution including a cleaning agent for removing solder flux according to an embodiment of the present invention, such as an amine compound, a PH regulator, a stabilizer, a surfactant, and an additive for enhancing cleaning power, is prepared. Do (S10). For example, a 250 ml beaker can be filled with about 200 ml of detergent (cleaning liquid). Here, since the composition of the cleaning agent for removing the solder flux according to an embodiment of the present invention has been described in detail above, a description thereof will be omitted here.
그리고 상기 세정제의 온도가 55 ~ 65℃, 바람직하게는 약 60℃가 되도록 가열한다(S20). 예를 들어, 가열 교반기를 이용하여, 단계 S10에서 준비한 세정액이 담긴 비이커를 가열함으로써, 세정액의 소정의 온도가 약 60℃가 될 때까지 가열할 수 있다.Then, the cleaning agent is heated to a temperature of 55 to 65°C, preferably about 60°C (S20). For example, by heating the beaker containing the cleaning liquid prepared in step S10 using a heating stirrer, the cleaning liquid may be heated until a predetermined temperature of the cleaning liquid reaches about 60°C.
계속해서, 단계 S20에서 가열된 상기 세정제에 피세정물을 소정의 시간 동안 침적시킨다(S30). 예를 들어, 약 60℃의 온도로 가열된 세정액을 담고 있는 비이커에 피세정물(예컨대, 구리배선 프린트 기판)을 약 5분 정도 침적시킬 수 있다.Subsequently, the object to be cleaned is immersed in the cleaning agent heated in step S20 for a predetermined time (S30). For example, an object to be cleaned (eg, a copper wiring printed board) may be immersed in a beaker containing a cleaning solution heated to a temperature of about 60° C. for about 5 minutes.
그리고 소정의 시간(예컨대, 약 5분) 동안 세정액에 침적시킨 피세정물을 꺼내어서, 물로서 세척(린스)한 다음 건조시킨다(S40). 본 실시예에 의하면, 세척 방법이나 건조 방법 등에 특별한 제한이 없는데, 세척 공정은 흐르는 물이나 소정의 용기에 담긴 물을 이용할 수 있으며, 건조도 자연 건조나 인공 건조 등의 방법이 제한 없이 이용될 수 있다.Then, the object to be cleaned immersed in the cleaning solution for a predetermined time (eg, about 5 minutes) is taken out, washed (rinsed) with water, and then dried (S40). According to the present embodiment, there is no particular limitation on the washing method or drying method, but the washing process may use running water or water contained in a predetermined container, and the drying method may be used without limitation, such as natural drying or artificial drying. have.
다음으로 본 발명의 실시예에 따른 땜납 플럭스 제거용 세정제의 세정력 평가를 비교예와 대비하여 설명한다.Next, evaluation of the cleaning power of the cleaning agent for removing the solder flux according to the embodiment of the present invention will be described in comparison with the comparative example.
실험예 및 비교예에 따른 세정제(세정액)의 제조Preparation of cleaning agent (cleaning solution) according to Experimental Examples and Comparative Examples
1L 유리 비이커에 하기 표 1에 기재된 조성이 되도록 각 성분을 배합하고, 다음의 조건으로 혼합함으로써 실험예 1-5 및 비교예 1-3의 세정제(세정액) 1L를 각각 조제하였다.Each component was blended in a 1 L glass beaker so as to have the composition shown in Table 1 below, and mixed under the following conditions to prepare 1 L of the detergent (washing liquid) of Experimental Example 1-5 and Comparative Example 1-3, respectively.
- 세정액 제조온도: 25℃-Cleaning liquid manufacturing temperature: 25℃
- 교반기: 마그네틱 스터러(50mm 회전자)-Agitator: Magnetic stirrer (50mm rotor)
- 회전수: 500rpm-Speed: 500rpm
- 교반시간: 30분-Stirring time: 30 minutes
그리고 땜납 플럭스 제거용 세정제에 포함되는 각 구성성분들은 다음의 것들을 사용하였다.In addition, the following ingredients were used as the components included in the solder flux removal detergent.
- 아민계 화합물: 모노메탄올아민 (99%, 대정화금)-Amine compound: Monomethanolamine (99%, Daejunghwa Gold)
- 피에이치 조정제: 글루콘산(50%, JUNSEI)-PH modulator: gluconic acid (50%, JUNSEI)
- 안정제: L-시스테인(99%, 대정화금)-Stabilizer: L-cysteine (99%, Daejunghwa Gold)
- 계면 활성제: 술피놀(Surfynol) 485W(EVONIK)-Surfactant: Sulfinol 485W (EVONIK)
- 세정력 강화용 첨가제: 티오글리콜(99%, 시그마알드리치)-Additive for enhancing cleaning power: Thioglycol (99%, Sigma-Aldrich)
세정력 및 금속 부식 평가Evaluation of cleaning power and metal corrosion
전술한 조성에 따라 제조한 실험예 1-6 및 비교예 1-2의 세정제를 사용하여, 세정력 및 금속 부식 여부를 평가하였다.Using the cleaning agents of Experimental Examples 1-6 and Comparative Example 1-2 prepared according to the above-described composition, cleaning power and metal corrosion were evaluated.
[세정력 평가][Cleaning power evaluation]
이하의 조건으로 테스트 기판을 세정하여, 세정력 평가를 위한 시험을 실시하였다.The test substrate was cleaned under the following conditions, and a test for evaluating cleaning power was conducted.
우선, 테스트 기판으로, 구리 배선 프린트 기판(20mm X 20mm) 상에 스크린판을 사용하여, WS-580(Indium Corporation) 플럭스를 도포한 다음, 280℃에서 90초동안 리플로우함으로써 도 2에 도시된 바와 같이 플럭스 잔사가 있는 테스트 기판을 제작하였다. 도 2에서 우측의 도면은 좌측 도면에 점선으로 표시된 부분을 주사 전자 현미경(FE-SEM)으로 촬영한 이미지이다.First, as a test substrate, using a screen plate on a copper wiring printed circuit board (20mm X 20mm), WS-580 (Indium Corporation) flux was applied, and then reflowed at 280°C for 90 seconds, as shown in FIG. As described above, a test substrate having a flux residue was prepared. In FIG. 2, the diagram on the right is an image photographed with a scanning electron microscope (FE-SEM) of a portion indicated by a dotted line in the left diagram.
그리고 땜납 플럭스의 제거 성능 분석을 위하여, 제작한 테스트 기판(PCB 기판 모듈)을 250ml 비이커에 담긴 세정액에 침적시켰다. 이 때, 세정액의 온도는 60℃가 되도록 미리 가열을 하였으며, 침적은 약 5분 동안 수행하였다. 그리고 테스트 기판을 세정액으로부터 꺼낸 다음 물로 세척을 하고 자연 건조를 하였다. 제조한 세정제를 이용하여 세정된 테스트 기판의 플럭스 잔사가 잘 제거되었는지 여부를 확인하기 위하여 주사 전자 현미경(FE-SEM)으로 촬영하여 분석을 하였다. 실험예 1-5와 비교예 1-3의 세정제를 각각 사용하여 세정된 테스트 기판을 촬영한 사진은 도 3에 도시되어 있다.In addition, in order to analyze the removal performance of the solder flux, the produced test substrate (PCB substrate module) was immersed in a cleaning solution contained in a 250 ml beaker. At this time, the washing solution was heated in advance so that the temperature was 60°C, and immersion was performed for about 5 minutes. Then, the test substrate was taken out from the cleaning solution, washed with water, and dried naturally. In order to check whether the flux residue of the test substrate cleaned using the prepared cleaning agent was well removed, an image was taken with a scanning electron microscope (FE-SEM) and analyzed. A photograph of a test substrate cleaned by using the cleaning agents of Experimental Example 1-5 and Comparative Example 1-3, respectively, is shown in FIG. 3.
[금속 부식 평가][Metal corrosion evaluation]
알루미늄 시편 및 구리 시편(10mm X 20mm)을 준비된 실험예 1-5 및 비교예 1-3의 세정액에 침적하여 약 60℃에서 2시간 동안 침적시킨 후에 자연 건조 방치하였다. 그 후, 알루미늄 시편 및 구리 시편의 표면을 육안으로 관찰하여 부식 여부를 확인하였으며, 알루미늄 시편 및 구리 시편 각각의 표면에 대한 촬영 결과는 도 4 및 도 5에 도시되어 있다. Aluminum specimens and copper specimens (10mm X 20mm) were immersed in the prepared cleaning solutions of Experimental Examples 1-5 and 1-3, immersed at about 60° C. for 2 hours, and then left to dry naturally. Thereafter, the surfaces of the aluminum specimen and the copper specimen were visually observed to check whether there was corrosion, and photographing results of the surfaces of the aluminum specimen and the copper specimen are shown in FIGS. 4 and 5.
표 1에는 실험예 1-5 및 비교에 1-3에 따른 땜납 플럭스 제거용 세정제의 조성 및 그에 따른 세정력 평가 결과(도 3) 및 금속 부식 평가 결과(도 4 및 도 5)가 함께 개시되어 있다. 표 1에서, 세정력 평가 기준으로, 기호 "O"는 플럭스 도포 면적 대비 100% 제거, 기호 "△"는 플럭스 도포 면적 대비 50 ~ 90% 제거, 기호 "X"는 플럭스 도포 면적 대비 50% 미만 제거를 나타내며, 금속 부식 평가 기준으로 기호 "O"는 부식이 없음을 나타내고, 기호 "△" 금속 시편의 면적 대비 10 ~ 50%가 변색되는 것을 나타내고, 기호 "X"는 금속 시편 면적 대비 50% 이상이 변색되는 것을 나타낸다.In Table 1, the composition of the cleaning agent for removing the solder flux according to Experimental Examples 1-5 and 1-3, and the resulting cleaning power evaluation result (FIG. 3) and the metal corrosion evaluation result (FIG. 4 and FIG. 5) are disclosed together. . In Table 1, as a criterion for evaluating the cleaning power, the symbol "O" removes 100% of the area applied to the flux, the symbol "△" removes 50 to 90% of the area applied to the flux, and the symbol "X" removes less than 50% of the area applied to the flux. The symbol "O" indicates that there is no corrosion, and the symbol "△" indicates that 10 to 50% of the area of the metal specimen is discolored, and the symbol "X" is more than 50% of the area of the metal specimen. It indicates discoloration.
표 1을 참조하면, 피에이치 범위에 따른 금속 부식 평가 결과에서, 중성 영역(실험예 1-5)에서 금속 부식이 없다는 것을 확인할 수 있다. 그리고 피에이치 범위에 따른 세정력 평가 결과에서, 세정제의 피에이치가 알칼리 영역인 경우(비교예 1-2)에는 좋은 세정력을 보이는 반면 중성 영역인 경우(실험예 1)에는 세정력이 좋지 않지만, 중성 영역인 경우라도 세정력 강화용 첨가제를 추가한 경우(실험예 2-5)에는 세정력이 향상되고 또한 그 양이 증가함에 따라서 세정력도 비례하여 향상되는 것을 알 수 있다.Referring to Table 1, from the results of metal corrosion evaluation according to the PH range, it can be confirmed that there is no metal corrosion in the neutral region (Experimental Example 1-5). And in the results of evaluating the cleaning power according to the range of PH, when the PH of the cleaning agent is in the alkaline region (Comparative Example 1-2), it shows good cleaning power, whereas in the neutral region (Experimental Example 1), the cleaning power is poor, but in the case of the neutral region. Even if the additive for enhancing cleaning power is added (Experimental Example 2-5), it can be seen that the cleaning power is improved, and as the amount increases, the cleaning power is also proportionally improved.
전술한 바와 같이, 이상의 설명은 실시예에 불과할 뿐이며 이에 의하여 한정되는 것으로 해석되어서는 안된다. 본 발명의 기술 사상은 후술하는 특허청구범위에 기재된 발명에 의해서만 특정되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다. 따라서 전술한 실시예가 다양한 형태로 변형되어 구현될 수 있다는 것은 통상의 기술자에게 자명하다.As described above, the above description is merely an example and should not be construed as being limited thereto. The technical idea of the present invention should be specified only by the invention described in the claims to be described later, and all technical ideas within the scope equivalent thereto should be interpreted as being included in the scope of the present invention. Therefore, it is obvious to those skilled in the art that the above-described embodiments can be modified and implemented in various forms.
Claims (9)
상온에서 수용액인 상기 세정제 1L를 기준으로, 10 ~ 100g의 아민계 화합물, 피에이치(PH) 조정제, 10 ~ 50g의 안정제 및 0.01 ~ 50g의 계면 활성제를 포함하고,
상기 피에이치 조정제는 상기 세정제가 중성 범위의 피에이치를 갖는 양만큼 포함되어 있는 특징으로 하는 땜납 플럭스 제거용 세정제.
In the solder flux removal cleaning agent,
Based on 1L of the detergent, which is an aqueous solution at room temperature, it contains 10 to 100 g of an amine compound, a PH regulator, 10 to 50 g of a stabilizer, and 0.01 to 50 g of a surfactant,
The cleaning agent for removing solder flux, wherein the PH modifier is contained in an amount in which the cleaning agent has a PH in a neutral range.
상기 세정제 1L를 기준으로, 10 ~ 50g의 세정력 강화용 첨가제를 더 포함하는 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method of claim 1,
A cleaning agent for removing solder flux, further comprising an additive for enhancing cleaning power of 10 to 50 g based on 1L of the cleaning agent.
상기 중성 범위의 피에이치는 6 ~ 8인 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method according to claim 1 or 2,
A cleaning agent for removing solder flux, characterized in that the pH in the neutral range is 6 to 8.
상기 아민계 화합물은 에틸렌디아민테트라메틸렌인산, 디에틸렌트리아민펜타메틸렌인산, 아미노트리메틸렌인산, 모노에탈온아민, 디에탄올아민, 트리에탄올아민, 모노프로한올아민, 디프로판올아민, 트리프로판올아민, 메틸렌디아민, 에틸렌디아민, 테트라메틸렌디아민, 펜타메닐렌디아민, 헥사메틸렌디아민, 디에틸렌트리아민, 테트라에틸렌펜타민. 펜타에틸렌헥사민, 헥사에틸렌헵타민, 시나밀아민 및 사이클로헥실아민으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함하는 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method according to claim 1 or 2,
The amine compound is ethylenediaminetetramethylenephosphate, diethylenetriaminepentamethylenephosphate, aminotrimethylenephosphate, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, dipropanolamine, tripropanolamine, methylene Diamine, ethylenediamine, tetramethylenediamine, pentamenylenediamine, hexamethylenediamine, diethylenetriamine, tetraethylenepentamine. A cleaning agent for removing solder flux, comprising at least one compound selected from the group consisting of pentaethylenehexamine, hexaethyleneheptamine, cinnamylamine, and cyclohexylamine.
상기 피에이치 조정제는 메탄술폰산, 에탄술폰산, 1-프로판술폰산, 2-프로판술폰산, 1-부탄술폰산, 2-부탄술폰산, 펜탄술폰산, 헥산술폰산, 데칸술폰산, 아세트산, 프로피온산, 부티르산, 시트르산, 타르타르산, 글루콘산, 술포숙신산, 트리플루오로아세트산, 황산, 질산 및 인산으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함하는 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method according to claim 1 or 2,
The PH modifier is methanesulfonic acid, ethanesulfonic acid, 1-propanesulfonic acid, 2-propanesulfonic acid, 1-butanesulfonic acid, 2-butanesulfonic acid, pentanesulfonic acid, hexanesulfonic acid, decanesulfonic acid, acetic acid, propionic acid, butyric acid, citric acid, tartaric acid, glucose A cleaning agent for removing solder flux, comprising at least one compound selected from the group consisting of conic acid, sulfosuccinic acid, trifluoroacetic acid, sulfuric acid, nitric acid and phosphoric acid.
상기 안정제는 에틸렌디아민테트라아세트산, 에틸렌디아민테트라아세트산 이나트륨염, 히드록시에틸에틸렌디아민트리아세트산, 디에틸렌트리아민 펜타아세트산, 트리에틸렌테트라민헥사아세트산, 에틸렌디아민테르라프로리온산, 니트릴로트리아세트산, 이미노디아세트산, 이미노디프로피온산, 글루타민산, 오르티닌 및 시스테인으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함하는 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method according to claim 1 or 2,
The stabilizer is ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid disodium salt, hydroxyethylethylenediaminetriacetic acid, diethylenetriamine pentaacetic acid, triethylenetetraminehexaacetic acid, ethylenediamine terapropionic acid, nitrilotriacetic acid, already Nodiacetic acid, iminodipropionic acid, glutamic acid, ortinine and cysteine. A cleaning agent for removing solder flux, comprising at least one compound selected from the group consisting of.
상기 계면활성제는 알킬 황산염, 폴리옥시에틸렌 알킬 에테르 황산염, 폴리 옥시에틸렌 알킬페닐에테르 황산염, 알킬벤젠술폰산염, 모노 내지 트리알킬아민염, 디메틸디알킬암모늄염, 트리메틸알킬암모늄염, C1 내지 C20 알카놀, 페놀, 나프톨, 비스페놀류, C1내지 C25 알킬페놀, 아릴알킬페놀, C1내지 C25 알킬나프톨, C1내지 C25 알콕시 인산(염), 소르비탄 에스테르, 폴리알킬렌글리콜, C1내지 C22 지방족 아미드 등에 에틸렌옥사이드 및 프로필렌옥사이드를 2내지 300몰 정도 부가 축합시킨 것, 카르복시 베타인, 술포베타인, 이미다졸린 베타인 및 아미카르복실산으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함하는 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method according to claim 1 or 2,
The surfactants are alkyl sulfates, polyoxyethylene alkyl ether sulfates, polyoxyethylene alkylphenyl ether sulfates, alkylbenzenesulfonates, mono to trialkylamine salts, dimethyldialkylammonium salts, trimethylalkylammonium salts, C1 to C20 alkanols, phenols , Naphthol, bisphenols, C1 to C25 alkylphenol, arylalkylphenol, C1 to C25 alkyl naphthol, C1 to C25 alkoxy phosphoric acid (salt), sorbitan ester, polyalkylene glycol, C1 to C22 aliphatic amide, etc. Ethylene oxide and propylene A cleaning agent for removing solder flux, characterized in that it contains at least one compound selected from the group consisting of an addition-condensation of 2 to 300 moles of oxide, carboxy betaine, sulfo betaine, imidazoline betaine, and amicarboxylic acid .
상기 첨가제는 1.3-디메틸티오오소, 트리메틸티오요소, 디에틸티오요소, N,N-디이소프로필티오요소, 알릴티오요소, 아세틸티오요소, 애틸렌티오요소, 1,3-디페닐티오요소, 이산화티오요소, 2,2' 디티오아닐린, 디피리딜디술피드, 티오글리콜산, B-티오클리콜, 비스(도데카에틸렌글리콜)티오에테르, 1,2 비스(2-히드록시에틸티오)에탄, 1,4-비스(2-히드록시에틸티오)부탄, 티오글리콜, 티오클리콜산 및 메르캅토숙신산으로 이루어진 그룹에서 선택된 하나 이상의 화합물을 포함하는 것을 특징으로 하는 땜납 플럭스 제거용 세정제.
The method according to claim 1 or 2,
The additives include 1.3-dimethylthioso, trimethylthiourea, diethylthiourea, N,N-diisopropylthiourea, allylthiourea, acetylthiourea, atylenethiourea, 1,3-diphenylthiourea, Thiourea dioxide, 2,2' dithioaniline, dipyridyl disulfide, thioglycolic acid, B-thioglycol, bis (dodecaethylene glycol) thioether, 1,2 bis (2-hydroxyethylthio) A cleaning agent for removing solder flux, comprising at least one compound selected from the group consisting of ethane, 1,4-bis(2-hydroxyethylthio)butane, thioglycol, thioclicholic acid, and mercaptosuccinic acid.
소정의 용기에 제1항 또는 제2항의 땜납 플럭스 제거용 세정제를 준비하는 단계;
상기 세정제의 온도가 55 ~ 65℃가 되도록 가열하는 단계;
가열된 상기 세정제에 피세정물을 침적시키는 단계; 및
소정의 시간 경과 후에 상기 피세정물을 물로 세척한 다음 건조하는 단계를 포함하는 것을 특징으로 하는 땜납 플럭스의 제거를 위한 세정방법.
In the cleaning method for removing the solder flux,
Preparing the cleaning agent for removing the solder flux of claim 1 or 2 in a predetermined container;
Heating the cleaning agent to a temperature of 55 to 65°C;
Immersing the object to be cleaned in the heated cleaning agent; And
And washing the object to be cleaned with water and then drying the object after a predetermined period of time.
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WO2022050382A1 (en) * | 2020-09-04 | 2022-03-10 | 花王株式会社 | Flux cleaning agent composition |
Citations (3)
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KR20070020144A (en) | 2003-08-27 | 2007-02-16 | 가켄 테크 가부시키가이샤 | Cleaning agent for removing solder flux and method for cleaning solder flux |
KR20080114718A (en) | 2006-03-17 | 2008-12-31 | 아라까와 가가꾸 고교 가부시끼가이샤 | Cleaner composition for removal of lead-free soldering flux, rinsing agent for removal of lead-free soldering flux, and method for removal of lead-free soldering flux |
KR100907568B1 (en) | 2009-04-16 | 2009-07-14 | 에스피텍 주식회사 | Cleaning agent for removing solder flux and method for cleaning solder flux |
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KR20070020144A (en) | 2003-08-27 | 2007-02-16 | 가켄 테크 가부시키가이샤 | Cleaning agent for removing solder flux and method for cleaning solder flux |
KR20080114718A (en) | 2006-03-17 | 2008-12-31 | 아라까와 가가꾸 고교 가부시끼가이샤 | Cleaner composition for removal of lead-free soldering flux, rinsing agent for removal of lead-free soldering flux, and method for removal of lead-free soldering flux |
KR100907568B1 (en) | 2009-04-16 | 2009-07-14 | 에스피텍 주식회사 | Cleaning agent for removing solder flux and method for cleaning solder flux |
Cited By (1)
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WO2022050382A1 (en) * | 2020-09-04 | 2022-03-10 | 花王株式会社 | Flux cleaning agent composition |
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