KR20200086998A - Apparatus and method for processing plasma - Google Patents

Abstract

The present invention relates to a device for processing plasma. The device may comprise: a processing chamber; a mounting table installed in the processing chamber and mounting the substrate onto which a sample has been transferred; an upper electrode installed above the processing chamber; a lower electrode installed under the mounting table; a plasma generation unit generating plasma by applying a bias voltage to the upper electrode and the lower electrode; and a substrate bias application unit applying bias voltage to the substrate.

Description

Plasma processing apparatus and method{APPARATUS AND METHOD FOR PROCESSING PLASMA}

The present invention relates to a plasma processing apparatus and method.

In recent years, components such as semiconductor devices, LCDs, organic ELs, and plasma display panels (PDPs) are becoming more precise in structure, and plasma processing apparatuses are generally used for manufacturing or regeneration processes of such precise components.

Conventional plasma processing apparatuses use an inductively coupled plasma source, a microwave plasma source, or a capacitively coupled plasma source, and are generally capacitively coupled flat plates Plasma processing devices are widely used.

On the other hand, in the conventional plasma processing apparatus, plasma and flux are formed through bias of the upper and lower electrodes, thereby controlling the directionality and energy of the plasma, and in general, density distribution of elements constituting plasma when only the upper and lower electrodes are formed. There is a problem that is difficult to adjust.

For this reason, at present, there is a need for a method capable of adjusting the density of high energy cations and anions and the density of low energy radicals, respectively. For example, for surface activation of a two-dimensional material, a technique is needed to increase the relative density of radicals with low energy.

In fact, surface activation is essential to chemically deposit high-quality thin films on two-dimensional materials with stable surface properties. However, in the case of a 2D material, since the plasma energy is easily etched when the plasma energy is slightly high, it is required to finely adjust the plasma energy by pushing or pulling ions or radicals in the region around the sample material.

However, in the case of the conventional plasma processing apparatus, as described above, only the overall flux of the plasma is adjusted, and it is difficult to finely control the energy at the lower electrode, and there is a difficulty in solving this problem.

In addition, a separate patterning process is required to pattern the active portion on the 2D material. Accordingly, in the case of the conventional plasma processing apparatus, a lithography process is mainly used as a patterning process, which is inefficient in terms of price, and impurity generated due to a material used as a mask such as PR is the performance of a two-dimensional material. There was a problem of lowering.

In addition, at present, there is a limitation in that there is no suitable method to solve the problem when patterning is necessary but difficult to apply depending on the material or application used as a mask, such as a process in which a mechanical mask cannot be utilized.

The present invention is to solve the problems of the prior art described above, by controlling the movement of the plasma ions through the control of the electrode using a metal that is formed on one side of the lower electrode to apply a bias voltage, plasma ions in a finer region Density, etc. can be adjusted. Accordingly, an object of the present invention is to provide a plasma processing apparatus and method that can finely and efficiently control the degree of surface activation of two-dimensional materials.

In addition, a plasma processing apparatus and method for selectively activating a surface of a two-dimensional material by allowing partial bias to be applied through patterning of a metal formed on one side of the lower electrode and additionally applying a bias voltage Want to provide

However, the technical problems to be achieved by the present embodiment are not limited to the technical problems as described above, and other technical problems may exist.

As a technical means for achieving the above-described technical problem, an embodiment of the present invention relates to a plasma processing apparatus, a processing chamber, a mounting table on which a sample is transferred, a substrate mounted on the processing chamber, and an upper portion of the processing chamber It includes an upper electrode installed on, a lower electrode installed on the bottom of the mounting table, a plasma generating unit for generating a plasma by applying a bias voltage to the upper electrode and the lower electrode, and a substrate bias applying unit for applying a bias voltage to the substrate can do. Here, the substrate bias applying unit may activate the sample using the generated plasma by controlling the bias voltage applied to the substrate.

Another embodiment of the present invention relates to a plasma processing method, a step of placing a substrate on which a sample is transferred and installed in a processing chamber, an upper electrode installed on an upper portion of the processing chamber, and a lower electrode installed on a lower portion of the mounting table And generating a plasma by applying a bias voltage to and applying a bias voltage to the substrate. Here, in applying the bias voltage to the substrate, the sample may be activated using the generated plasma by controlling the bias voltage applied to the substrate.

Another embodiment of the present invention, when executed by a computing device as a computer program, installed in a processing chamber, placing a substrate on which a sample has been transferred, an upper electrode installed on the upper portion of the processing chamber and a lower portion of the mounting table A sequence of instructions for generating a plasma by applying a bias voltage to a lower electrode, applying a bias voltage to the substrate, and controlling the bias voltage applied to the substrate to activate the sample using the generated plasma. It is possible to provide a computer program stored in a medium containing a.

The above-described problem solving means are merely exemplary and should not be construed as limiting the invention. In addition to the exemplary embodiments described above, there may be additional embodiments described in the drawings and detailed description of the invention.

According to any one of the above-described problem solving means of the present invention, plasma ion density in a finer region is controlled by controlling the movement of plasma ions through control of an electrode formed on one side of the lower electrode and additionally applying a bias voltage. It is possible to control the back, and as a result, it is possible to provide a plasma processing apparatus and method for more finely and efficiently controlling the degree of surface activation of a two-dimensional material.

In addition, the present invention is formed on one side of the lower electrode to allow a partial bias to be applied through patterning of a metal that additionally applies a bias voltage, so that a plasma processing device capable of selectively activating a surface of a two-dimensional material, etc. And methods.

1 is a view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.
2 is a view showing the configuration of the processing chamber of the plasma processing apparatus according to an embodiment of the present invention.
3 and 4 are views showing a plasma processing state of the plasma processing apparatus according to an embodiment of the present invention.
5 is a view showing a plasma processing method according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains may easily practice. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. In addition, in order to clearly describe the present invention in the drawings, parts irrelevant to the description are omitted, and like reference numerals are assigned to similar parts throughout the specification.

Throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with other elements in between. . Also, when a part “includes” a certain component, this means that other components may be further included instead of excluding other components, unless otherwise specified.

In the present specification, the term “unit” includes a unit realized by hardware, a unit realized by software, and a unit realized by using both. Further, one unit may be realized by using two or more hardware, and two or more units may be realized by one hardware.

Some of the operations or functions described in this specification as being performed by a terminal or device may be performed instead on a server connected to the corresponding terminal or device. Similarly, some of the operations or functions described as being performed by the server may be performed in a terminal or device connected to the corresponding server.

Hereinafter, specific contents for carrying out the present invention will be described with reference to the accompanying drawings or process flow charts.

1 is a view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the plasma processing apparatus 10 may include a substrate 100 and a processing chamber 200.

A sample may be transferred to the substrate 100. For example, the substrate 100 may be formed of any one of glass, wafer, and flexible substrate (PI, PET).

The sample can include, for example, a one-dimensional material such as carbon nanotubes. Further, the sample may include a two-dimensional material, for example, graphene material. Since such a two-dimensional material has very stable surface characteristics, there is a problem that a chemical reaction-based film forming process for depositing a high-quality thin film on a two-dimensional material does not proceed well. Accordingly, in order to apply a two-dimensional material to various electronic devices and sensors, an activation process is essential for the surface. The present invention corresponds to a technology for activating the surface of a 2D material in order to apply a 2D material to various electronic devices and sensors, and a technical feature to control the degree of activation of the surface and locally activate only a desired part Have as

Through the present invention, the sample may be activated to be applicable to electronic devices and sensors, and a partial biasing voltage may be applied locally using the patterned substrate 100 to locally select only a desired portion of the entire region of the sample. It can be activated.

The processing chamber 200 mounts the substrate 100 therein, generates a plasma by applying a bias voltage to electrodes installed on the upper and lower portions, and activates a sample of the substrate 100 using the generated plasma, By controlling the bias voltage applied to the (100), it is possible to control the degree of activation of the sample.

The processing chamber 200 will be described in more detail below.

Hereinafter, a processing chamber of the plasma processing apparatus according to an embodiment of the present invention will be described in more detail with reference to FIG. 2.

2 is a view showing the configuration of the processing chamber of the plasma processing apparatus according to an embodiment of the present invention.

Referring to FIG. 2, the processing chamber 200 may include a mounting table 210, an upper electrode 230, a lower electrode 250, a plasma generating unit 270, and a substrate bias applying unit 290.

The mounting table 210 is installed in the processing chamber 200 and can place the substrate 100 on which the sample has been transferred.

Here, the mounting table 210 may be placed on the substrate 100 after the vacuum state inside the processing chamber 200 is released, and when the substrate 100 is mounted by the mounting table 210, the processing chamber 200 ) The inside can be set to vacuum again.

The upper electrode 230 may be installed on the upper side in the processing chamber 200 and receive a bias voltage from the plasma generator 270 described below. The lower electrode 250 is installed on the lower side of the mounting table 210 and may be applied with a bias voltage from the plasma generating unit 270 described below. For example, the upper electrode 230 and the lower electrode 250 may be made of metal such as gold, platinum, and silver.

The plasma generator 270 may generate plasma by applying bias voltages to the upper electrode 230 and the lower electrode 250. More specifically, the plasma generating unit 270 applies a bias voltage to the upper electrode 230 and the lower electrode 250 so that a plasma flux is formed between the upper electrode 230 and the lower electrode 250. can do.

Here, after confirming the vacuum state of the processing chamber 200, the plasma generator 270 may generate plasma by applying bias voltages to the upper electrode 230 and the lower electrode 250.

In addition, the plasma generator 270 may apply a bias voltage to the upper electrode 230 and the lower electrode 250 based on the bias voltage value set by the user, and generate plasma based on the set plasma source. After confirming the generated plasma, the sample may be activated using plasma based on the set plasma processing time.

Here, the plasma source may form anions, cations, and radicals depending on the type, and samples of the substrate 100 may be activated by the anions, cations, and radicals thus generated.

The substrate bias applying unit 290 may apply a bias voltage to the substrate 100. Here, the substrate bias applying unit 290 may be formed on one side of the lower electrode 250.

Here, the substrate bias applying unit 290 may apply a bias voltage to the substrate 100 based on the plasma processing time and the bias voltage values previously set.

On the other hand, the substrate 100 to which the bias voltage is applied by the substrate bias applying unit 290 may be charged as an anode or a cathode, and thereby, the density of plasma ions transmitted to the surface of the sample by the attractive force or repulsive force generated Can be controlled.

That is, the substrate bias applying unit 290 strengthens at least one of the positive and negative plasmas formed on one side of the substrate 100 by applying at least one of the positive and negative bias voltages to the substrate 100 ( It is possible to form an attractive force) or weaken (to form a repulsive force), thereby generating an attractive force or a repulsive force to control the density of plasma ions transmitted to the surface of the sample. This will be described in more detail below.

Hereinafter, plasma processing in the plasma processing apparatus according to an embodiment of the present invention will be described in more detail with reference to FIGS. 3 and 4.

3 and 4 are views showing a plasma processing state of the plasma processing apparatus according to an embodiment of the present invention.

Referring to FIG. 3, the plasma generating unit 270 generates plasma through the upper electrode 230 and the lower electrode 250, and the substrate bias applying unit 290 applies a bias voltage to the substrate 100 to apply a substrate. The sample 300 transferred on the 100 may be activated.

More specifically, the substrate bias applying unit 290 may activate the sample 300 transferred on the substrate 100 by applying a bias voltage to the substrate 100 whose surface is covered with the metal film 310.

In addition, the substrate bias applying unit 290 may activate the sample 300 by applying a bias voltage to the sample 300 itself when the sample 300 is a material having high conductivity, such as metal, graphene, or carbon nanotubes. Can.

In addition, the substrate bias applying unit 290 applies at least one of an anode bias voltage and a cathode bias voltage applied to the substrate 100 to at least one of the positive and negative plasmas formed on one side of the substrate 100. It can be strengthened or weakened, and through this, it is possible to control the density of plasma ions transmitted to the surface of the sample 300 by generating an attractive force or a repulsive force.

For example, when the substrate bias applying unit 290 applies the anode bias voltage to the substrate 100, the positive ion plasma is pushed out due to the repulsive force generated by the positive electrode bias voltage, and the negative ion plasma is attracted due to attractive force. , Accordingly, the plasma density by the cation plasma may be reduced, and the plasma density by the anion plasma may be increased. That is, as the plasma density increases or decreases, the degree of activation of the sample 300 on the surface may increase or decrease.

In addition, when the substrate bias applying unit 290 applies the cathode bias voltage to the substrate 100, the anion plasma is pushed out due to the attractive force generated by the cathode bias voltage, and the cation plasma is drawn due to the attractive force. Accordingly, the plasma density by the cation plasma can be increased, and the plasma density by the anion plasma can be reduced. That is, as the plasma density increases or decreases, the degree of activation of the sample 300 on the surface may increase or decrease.

By the above configuration, the substrate bias applying unit 290 of the present invention applies an anode bias voltage or a cathode bias voltage to the substrate 100 to control the density of the cation plasma or anion plasma transmitted to the surface of the sample 300 By doing so, the degree of activation of the sample 300 can be controlled.

In addition, referring to FIG. 4, the substrate 100 may include a pattern region 400 on which a pattern is formed. In this case, the substrate 100 may be an insulator, and the pattern region 400 may be formed of a conductor (eg, a highly conductive metal or graphene material) on which a specific pattern is formed.

In addition, in this case, the substrate bias applying unit 290 applies a bias voltage to the substrate 100 including the pattern region 400, so that only some regions positioned on the pattern region 400 of the substrate 100 are anodes Alternatively, the cathode may be charged, and thus, the density of plasma ions transmitted to the surface of the sample 300 on the pattern region 400 may be controlled by the generated attractive force or repulsive force.

Here, since the substrate bias applying unit 290 does not apply a bias voltage to the sample 300 itself, the sample 300 may be formed of at least one of a conductor, a semiconductor, and an insulator.

For example, when the substrate bias applying unit 290 applies the anode bias voltage to the substrate 100 including the pattern region 400, the cationic plasma is pushed out due to the repulsive force generated by the anode bias voltage, and the attraction force Due to this, anion plasma is attracted. Accordingly, the plasma density by the cation plasma can be reduced, and the plasma density by the anion plasma can be increased. That is, according to the increase or decrease in plasma density, the degree of activation of a portion of the sample 300 positioned on the pattern region 400 formed on the substrate among the entire regions of the sample transferred to the substrate may be selectively increased or decreased.

In addition, when the substrate bias applying unit 290 applies the cathode bias voltage to the substrate 100, the anion plasma is pushed out due to the attractive force generated by the cathode bias voltage, and the cation plasma is drawn due to the attractive force. Accordingly, the plasma density by the cation plasma can be increased, and the plasma density by the anion plasma can be reduced. That is, according to the increase or decrease in plasma density, the degree of activation of a portion of the sample 300 positioned on the pattern region 400 formed on the substrate among the entire regions of the sample transferred to the substrate may be selectively increased or decreased.

5 is a view showing a plasma processing method according to an embodiment of the present invention. The plasma processing method shown in FIG. 5 includes steps that are processed in time series by the embodiments shown in FIGS. 1 to 4. Therefore, it should be noted that even if omitted, it can be applied to the plasma processing method according to the embodiment illustrated in FIGS. 1 to 4.

Referring to FIG. 5, the substrate 100 to which the sample has been transferred in step S510 may be placed on the mounting table 210.

In operation S530, the plasma processing apparatus 10 may generate plasma by applying bias voltages to the upper electrode 230 and the lower electrode 250.

In step S550, the plasma processing apparatus 10 may apply a bias voltage to the substrate 100.

In operation S570, the plasma processing apparatus 10 may control the bias voltage applied to the substrate 100.

In step S590, the plasma processing apparatus 10 may control the degree of activation of the sample transferred to the substrate 100 by controlling the applied bias voltage.

In the above description, steps S510 to S590 may be further divided into additional steps or combined into fewer steps, according to an embodiment of the present invention. In addition, some steps may be omitted if necessary, and the order between the steps may be changed.

One embodiment of the present invention may also be implemented in the form of a recording medium including instructions executable by a computer, such as program modules, being executed by a computer. Computer readable media can be any available media that can be accessed by a computer, and includes both volatile and nonvolatile media, removable and non-removable media. In addition, the computer-readable medium may include any computer storage medium. Computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data.

The above description of the present invention is for illustration only, and those skilled in the art to which the present invention pertains can understand that the present invention can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is indicated by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be interpreted to be included in the scope of the present invention. .

10: plasma processing device
100: substrate
200: processing room
210: table
230: upper electrode
250: lower electrode
270: plasma generator
290: substrate bias applying unit

Claims (5)

In the plasma processing apparatus,
Treatment room;
A mounting table installed in the processing chamber and on which the sample is transferred;
An upper electrode installed on the upper portion of the processing chamber;
A lower electrode installed under the mounting table;
A plasma generator for generating plasma by applying a bias voltage to the upper electrode and the lower electrode; And
Substrate bias applying unit for applying a bias voltage to the substrate
Including,
And the substrate bias applying unit activates the sample using the generated plasma by controlling a bias voltage applied to the substrate.
According to claim 1,
The sample is a one-dimensional material or two-dimensional material, plasma processing apparatus.
According to claim 1,
The substrate bias applying unit is to strengthen or weaken at least one of the positive and negative electrode plasma by controlling at least one of the positive and negative bias voltage applied to the substrate, plasma processing apparatus.
According to claim 1,
The substrate is a plasma processing apparatus comprising a pattern region on which a pattern is formed.
The method of claim 4,
The substrate bias applying unit activates a partial region located on a pattern region formed in the substrate among all regions of a sample transferred to the substrate.

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