KR20200055350A - Emitter for x-ray tube and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an emitter for an X-ray tube with improved electron emission efficiency and a manufacturing method thereof. The manufacturing method thereof may comprise the steps of: preparing a lower substrate; forming a cathode electrode layer by applying a metal material on the lower substrate; forming a catalyst blocking layer, which blocks a catalyst from moving to the cathode electrode layer, on the cathode electrode layer; forming a catalyst layer on the catalyst blocking layer; forming a catalyst control layer by applying a photosensitive carbon composite material on the catalyst layer; preparing a CNT growth unit in a predetermined pattern on the catalyst layer by a lithography process; and growing CNT in the CNT growth unit.

Description

Emitter for X-ray tube and its manufacturing method {EMITTER FOR X-RAY TUBE AND MANUFACTURING METHOD THEREOF}

The present invention relates to an emitter for an X-ray tube and a method for manufacturing the same, and more specifically, to prevent the catalyst from leaking during the manufacturing process of an emitter for an X-ray tube, uniformly emit CNT, an electron-emitting device, on the electrode structure of the X-ray tube. The present invention relates to an emitter for an X-ray tube, which can stably grow and improve electron emission efficiency, and a method for manufacturing the same.

In general, an X-ray source is an apparatus for generating X-rays, and includes an X-ray tube composed of a cathode and an anode in a vacuum tube, a high-voltage control and generator for applying high voltage to the X-ray tube, and a cooling device for cooling heat generated in the X-ray tube. do.

Existing X-ray sources generate electrons, such as tungsten filament, by heating at a high temperature to collide with emitted electrons, but it is difficult to operate digitally because of difficulty in instantaneous switching or current modulation, as well as high power consumption. , There were disadvantages such as energy distribution and direction of emitted electrons, difficulty in focusing electrons, and the like.

Therefore, development of an X-ray tube using CNT as a field emission source is actively underway. Carbon nanotubes are carbon allotropes made of carbon, and one carbon atom is combined with another carbon atom in a hexagonal honeycomb pattern to form a tube, and has been applied in various electric and electronic fields.

In the related art, in Korean Patent Registration No. 10-0851950, a desired pattern is formed in a desired position by forming a desired pattern by a lithography process using a resistor on a catalyst metal layer, and then growing an electron-emitting device carbon nanotube on the pattern. Although it is possible to form an electron-emitting device, in this case, the catalyst contained in the catalyst metal layer diffuses or leaks to the cathode electrode or the substrate during the manufacturing process of the emitter for the X-ray tube, especially in the heat treatment process, and the CNT grows stably. There was a problem that this was not.

An object of the present invention is to provide an emitter for an X-ray tube that can uniformly and stably grow CNTs using a catalyst barrier layer, thereby improving electron emission efficiency, and a method for manufacturing the same.

A method of manufacturing an emitter for an X-ray tube according to the present invention for achieving the above object comprises the steps of providing a lower substrate; Forming a cathode electrode layer by applying a metal material on the lower substrate; Forming a catalyst blocking layer on the cathode electrode layer to block the catalyst from moving to the cathode electrode layer; Forming a catalyst layer on the catalyst blocking layer; Forming a catalyst control layer by applying a photosensitive carbon composite material on the catalyst layer; Providing a CNT growth portion in a predetermined pattern on the catalyst layer by a lithography process; And growing CNTs in the CNT growth part.

According to one embodiment, the lower substrate may be formed of silicon or glass.

According to an embodiment, the step of forming a cathode electrode layer by applying a metal material on the lower substrate may deposit a metal thin film on the lower substrate.

According to one embodiment, the metal is silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), Iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof.

According to an embodiment, the catalyst blocking layer may include at least one of SiO _X , SiN _X , and alumina (Al ₂ O ₃ ).

According to one embodiment, the thickness of the catalyst barrier layer may be characterized in that formed to 1 ~ 20nm.

According to one embodiment, the catalyst control layer may be formed by spin coating or slit coating the liquid photosensitive carbon composite material on the catalyst blocking layer.

According to one embodiment, the catalyst control layer may include graphite or an organic material.

According to an embodiment, the catalyst layer may include at least one selected from nickel (Ni), iron (Fe), and cobalt (Co).

According to one embodiment, the catalyst layer, a thermal evaporation (thermal evaporation) method, sputtering (sputtering) method, electron beam evaporation (electron beam evaporation) method, through chemical vapor deposition (CVD: Chemical Vapor Deposition) through one selected process Can be formed.

According to one embodiment, the step of providing a CNT growth portion in a predetermined pattern on the catalyst layer by a lithography process is a process of sintering the photosensitive carbon composite material at a temperature of 400 to 1000 ° C., and using the photomask, the photosensitive carbon. The composite material may be developed after UV exposure treatment to form a CNT growth portion having a predetermined pattern on the catalyst layer, and etching and removing the catalyst layer or the catalyst layer and the catalyst blocking layer after the exposure and development.

According to one embodiment, the step of growing the CNT, the catalyst layer or the catalyst layer and the catalyst blocking layer is removed by etching, and then the CNT growth portion and the catalyst layer in a vacuum state at a temperature of 600 to 1000 ° C. It may include a process of melting for 600 minutes.

According to one embodiment, after the heat treatment, the catalyst of the catalyst layer is introduced into the CNT growth portion, and a seed for CNT growth may be formed inside the CNT growth portion.

According to one embodiment, the step of growing the CNT, the process of annealing the CNT growth portion (annealing), and plasma chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor De position) process to supply a hydrocarbon gas to the CNT growth portion Or it may include a process of growing CNT on the catalyst control layer through a thermal chemical vapor deposition process (Thermal CVD, Thermal Chemical Vapor Deposition).

The emitter for an X-ray tube according to the present invention comprises the steps of: providing a lower substrate; Forming a cathode electrode layer by applying a metal material on the lower substrate; Forming a catalyst blocking layer on the cathode electrode layer to block the catalyst from moving to the cathode electrode layer; Forming a catalyst layer on the catalyst blocking layer; Forming a catalyst control layer by applying a photosensitive carbon composite material on the catalyst layer; Providing a CNT growth portion in a predetermined pattern on the catalyst layer by a lithography process; And growing CNTs in the CNT growth part.

Emitter for an X-ray tube according to the present invention, the lower substrate; A cathode electrode layer formed on the lower substrate; A catalyst blocking layer formed on the cathode electrode layer and blocking catalyst from moving to the cathode electrode layer; And CNTs growing on the catalyst blocking layer to emit electrons.

According to one embodiment, the lower substrate may be formed of silicon or glass.

According to an embodiment, the catalyst blocking layer may include at least one of SiO _X , SiN _X , and alumina (Al ₂ O ₃ ), and the thickness of the catalyst blocking layer may be 1 to 20 nm.

According to the present invention, it is possible to prevent the catalyst from leaking to the cathode electrode or the substrate during the manufacturing process of the emitter for the X-ray tube.

In addition, electron emission efficiency can be improved by uniformly and stably growing CNT, which is an electron-emitting device, on the electrode structure of the X-ray tube.

1 is a side view of an emitter for an X-ray tube according to an embodiment of the present invention.
Figure 2 is a block diagram of a method for manufacturing an emitter for an X-ray tube according to an embodiment of the present invention.
3 to 9 are views for explaining a method of manufacturing an emitter for an X-ray tube.

Hereinafter, an emitter for an X-ray tube and a method of manufacturing the same according to a preferred embodiment will be described in detail with reference to the accompanying drawings. Here, the same reference numerals are used for the same components, and repeated descriptions and detailed descriptions of well-known functions and components that may unnecessarily obscure the subject matter of the invention are omitted. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art. Therefore, the shape and size of elements in the drawings may be exaggerated for a more clear description.

1 is a side view of an emitter for an X-ray tube according to an embodiment of the present invention.

As shown in FIG. 1, the emitter 100 for an X-ray tube may include a lower substrate 110, a cathode electrode layer 120, a catalyst blocking layer 130, and a CNT 150.

The lower substrate 110 may be formed of glass or silicon. For example, the lower substrate 110 may be formed of a square shape silicon wafer. The shape of the lower substrate 110 is not limited, and may be manufactured in various forms as necessary.

The cathode electrode layer 120 may be formed on the lower substrate 110. The cathode electrode layer 120 may be formed of a metal material. Specifically, the cathode electrode layer 120 is silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iri Dium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. In addition, the cathode electrode layer 120 may be deposited as a metal thin film having a thickness of 0.1 to 1.0 μm on the lower substrate 110.

The catalyst blocking layer 130 may be formed on the cathode electrode layer 120. The catalyst blocking layer 130 may be provided on a plurality of cathode electrode layers 120 and spaced apart from each other as shown in FIG. 1, or may be formed of a wide layer covering the entire cathode electrode layer 120 with one layer. However, the number, placement position, and clearance of the catalyst blocking layer 130 may be appropriately adjusted.

The catalyst blocking layer 130 may be formed of at least one of silicon oxide (SiO _X ), silicon nitride (SiN _X ), and alumina (Al ₂ O ₃ ), and has a thickness of 1 to 20 nm on the cathode electrode layer 120. It can be deposited.

The catalyst blocking layer 130 may prevent the catalyst included in the catalyst layer 140 to be described later in the process of manufacturing the emitter 100 for the X-ray tube from moving to the cathode electrode layer 120 or the lower substrate 110.

As such, as the catalyst blocking layer 130 is formed on the cathode electrode layer 120, it is possible to prevent the catalyst from leaking into the cathode electrode layer 120 or the lower substrate 110. Therefore, the catalyst can stably form a seed for CNT growth on the catalyst blocking layer 130, and the electron-emitting device CNT can be uniformly and stably grown on the catalyst blocking layer 130.

However, the catalyst blocking layer 130 is formed of at least one of silicon oxide (SiO _X ), silicon nitride (SiN _X ), and alumina (Al ₂ O ₃ ), and thus has properties as an insulating thin film.

Accordingly, when the catalyst blocking layer 130 is formed too thick, that is, larger than 20 nm, external power input through the cathode electrode layer 120 is blocked from the catalyst blocking layer 130 and transferred to the CNT 150 Since it may not be, the thickness of the catalyst blocking layer 130 is preferably smaller than 20 nm as described above.

In addition, when the catalyst blocking layer 130 is formed too thin, that is, smaller than 1 nm, the catalyst included in the catalyst layer 140 in the process of manufacturing the emitter 100 for the X-ray tube is the cathode electrode layer 120 However, since it may not be prevented from moving to the lower substrate 110, it is preferable to be formed larger than 1 nm as described above.

Carbon nanotube (CNT) 150 emits electrons in an electric field emission method, and may be formed on the catalyst blocking layer 130. The CNT 150 may be formed vertically on the catalyst blocking layer 130 or inclined upward on the catalyst blocking layer 130. Specifically, the CNT 150 is on the catalyst blocking layer 130 through a plasma enhanced chemical vapor deposition (PECVD) process or a thermal chemical vapor deposition (PECVD) process that supplies a hydrocarbon gas. It may be provided by growing in the vertical direction. The specific growth method of the CNT 150 will be described later.

2 is a block diagram of a method for manufacturing an emitter for an X-ray tube according to an embodiment of the present invention. In addition, FIGS. 3 to 8 are views for explaining a method of manufacturing an emitter for an X-ray tube.

2 to 8, the method for manufacturing an emitter for an X-ray tube (S100) includes preparing a lower substrate (S110), forming a cathode electrode layer (S120), and forming a catalyst blocking layer. The steps include (S130), forming a catalyst layer (S140), forming a catalyst control layer (S150), preparing a CNT growth unit (S160), and growing a CNT (S170). do.

In the step (S110) of preparing the lower substrate, the lower substrate 110 formed of glass or silicon is prepared. In one example, the lower substrate 110 may be formed in a rectangular thin plate (silicon wafer) shape, and may be pre-treated through a cleaning process before the step of forming the cathode electrode layer (S120).

In the forming of the cathode electrode layer (S120), the cathode electrode layer 120 may be formed by coating a metal material on the lower substrate 110. The cathode electrode layer 120 includes silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), and iridium (Ir) ), Chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. The cathode electrode layer 120 may be formed of a metal thin film on the lower substrate 110 through a vacuum deposition process, and may be deposited to a thickness of 0.1 to 1.0 μm.

In step S130 of forming a catalyst blocking layer, a catalyst blocking layer 130 is formed on the cathode electrode layer 120 to block the catalyst from moving to the cathode electrode layer 120. The catalyst blocking layer 130 may be formed of at least one of silicon dioxide (SiO ₂ ), silicon nitride (SiN _X ), and alumina (Al ₂ O ₃ ), as an oxide layer.

The catalyst blocking layer 130 may be deposited on the cathode electrode layer 120 to a thickness of 1 to 20 nm, and more specifically, the catalyst blocking layer 130 may be sputtered, screen printing, PECVD, APCVD. (Atomic pressure Chemical Vapor Deposition), LPCVD (Low pressure Chemical Vapor Deposition), may be formed on the cathode electrode layer 120 through a process selected from electron beam deposition.

The catalyst blocking layer 130 may prevent the catalyst included in the catalyst layer 140 from moving to the cathode electrode layer 120 or the lower substrate 110 in the heat treatment process for seed formation for CNT growth, which will be described later. The catalyst may be prevented from leaking to the cathode electrode layer 120 or the lower substrate 110.

When the catalyst blocking layer 130 is formed to be larger than 20 nm, external power input through the cathode electrode layer 120 may be blocked from the catalyst blocking layer 130 and not delivered to the CNT 150, and the catalyst blocking layer ( When 130) is formed smaller than 1 nm, the catalyst included in the catalyst layer 140 may not be prevented from moving to the cathode electrode layer 120 or the lower substrate 110 in the process of manufacturing the emitter 100 for the X-ray tube. Since it is possible, it is preferable that the thickness of the catalyst blocking layer 130 is 1 nm to 20 nm.

In the step (S140) of forming the catalyst layer, the catalyst layer 140 is formed by applying a transition metal material on the catalyst blocking layer 130.

The catalyst layer 140 may be formed of at least one selected from nickel (Ni), iron (Fe), and cobalt (Co). More specifically, the catalyst layer 140 is a single metal such as nickel (Ni), iron (Fe), or cobalt (Co), but an alloy in which cobalt-nickel, cobalt-iron, nickel-iron, or cobalt-nickel-iron is synthesized. It can be formed through one of the processes selected from thermal evaporation (thermal evaporation), sputtering (sputtering), electron beam evaporation (electron beam evaporation), chemical vapor deposition (CVD). The catalyst layer 140 may be formed on the catalyst blocking layer 130 to a thickness of 10 to 50 nm.

Thus, the step of providing a lower substrate (S110), forming a cathode electrode layer (S120), forming an insulating layer (S130), and forming a catalyst layer (S140), in turn, are shown in FIG. State.

The step of forming the catalyst control layer (S150) is as shown in FIG. 4, to form the catalyst control layer 160 by applying a photosensitive carbon composite material on the catalyst layer 140. The catalyst control layer 160 may be formed on the catalyst layer 140 through a spin coating or slit coating process. For example, the catalyst control layer 160 may be formed to have a thickness of 0.3 to 10 μm by adjusting the speed of spin coating.

The photosensitive carbon composite material is a material whose properties change with irradiation of light, and may be formed of graphite or an organic material. In this embodiment, the photosensitive carbon composite material will be described as a forge type that becomes soluble when exposed to light.

The step of providing the CNT growth unit (S160), as shown in FIGS. 5 to 6, exposes and develops the catalyst control layer 160 to provide the CNT growth unit 161 in a predetermined pattern on the catalyst layer 140. Here, the CNT growth portion 161 may be exposed and developed to be a catalyst control layer 160 having a predetermined pattern. That is, by exposure and development, the catalyst control layer 160 may be divided into an exposed patterned area and a non-exposed patterned area, and the patterned area becomes the CNT growth portion 161.

Specifically, the step (S160) of providing a CNT growth unit is a process of sintering the catalyst control layer 160 at a temperature of 400 to 1000 ° C., and UV exposure of the catalyst control layer 160 using a photomask (M). After treatment, the process develops to form the CNT growth portion 161 in a predetermined pattern on the catalyst layer 140 (see FIGS. 5 and 6), and the catalyst layer 140 and the catalyst layer exposed outside by exposure and development ( A process of etching and removing the catalyst blocking layer 130 disposed under the portion 140 may be included (see FIG. 7). Although the catalyst layer 140 and the catalyst blocking layer 130 are removed together by an etching process in FIG. 7, the catalyst blocking layer 130 is not etched, but only the catalyst layer 140 may be etched and removed.

As this etching process is performed, a gap may be formed between the plurality of CNT growth parts 161. In other words, the plurality of CNT growth parts 161 may be partitioned by a gap and formed in a plurality of protrusions. The step of growing the CNT (S170), after the process of etching and removing the catalyst layer 140 and the catalyst blocking layer 130, the CNT growth unit 161 and the catalyst layer that are part of the catalyst control layer 160 shown in FIG. 7 It may include a process of melting the heat treatment for 140 to 600 minutes at a temperature of 600 ~ 1000 ℃ in a vacuum state. Specifically, the heat treatment is preferably performed at a temperature of 600 ° C for 30 minutes.

When the layers in FIG. 7 are heat-treated in a vacuum state, the CNT growth unit 161 located in the region where the electron-emitting device CNT 150 grows as shown in FIG. 8 reacts and fuses with the catalyst layer 140 to fuse the CNT growth unit 161 ) Seed 162 for CNT growth may be formed inside. Seed 162 for CNT growth may be formed in a size of 5 ~ 20nm. By this reaction, the CNT 150 is grown at the site where the CNT growth unit 161 is located (see FIG. 8).

The catalyst blocking layer 130 may prevent the catalyst included in the catalyst layer 140 from moving to the cathode electrode layer 120 or the lower substrate 110 during the heat treatment process. As such, as the catalyst blocking layer 130 is formed on the cathode electrode layer 120, it is possible to prevent the catalyst from leaking into the cathode electrode layer 120 or the lower substrate 110.

At this time, the catalyst layer 140 may be naturally disappeared by being fused to the CNT growth unit 161 by the reaction of the CNT growth unit 161 and the catalyst metal in the process of growing the CNT 150.

On the other hand, the step of growing the CNT (S170), the process of annealing (annealing) the CNT growth unit 161, and plasma chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor De) to supply a hydrocarbon gas to the CNT growth unit 161 position) may include a process of growing the CNT 150 on the catalyst blocking layer 130 through a thermal CVD process (Thermal CVD, Thermal Chemical Vapor Deposition).

Specifically, after annealing the CNT growth unit 161 in a plasma reactor having an internal temperature of about 150 to 800 ° C and an internal pressure of 2 Torr, methane (CH ₄ ), acetylene (C ₂ H ₂ ), CNTs by supplying at least one gas selected from hydrocarbon gas such as ethylene (C ₂ H ₄ ), propylene (C ₂ H ₆ ), propane (C ₃ H ₈ ), ammonia (NH ₃ ), nitrogen, and hydrogen-containing gas (150) can be grown. As an example, the CNT 150 can be grown by simultaneously supplying 30 sccm of acetylene and 70 sccm of ammonia while fixing the upper electrode of the plasma reactor to 0 V and the lower electrode to -600 V, and supplying the voltage of the transmission control electrode to +300 V. have.

As described above, the hydrocarbon gas supplied into the deposition chamber of the plasma chemical vapor deposition (PECVD) apparatus is plasma and pyrolyzed into carbon units (C = C or C) and free hydrogen (H) in a gaseous state, and the decomposed Carbon units are adsorbed on the surface of the metal particle of the catalyst layer 140 exposed to the outside, and diffuses into the inside of the catalyst metal particle and dissolves over time. When carbon units are continuously supplied in this state, the CNT 150 is grown in a certain direction by catalysis of the catalytic metal particles. At this time, when the shape of the catalyst metal particles is round or blunt, the end of the CNT 150 is also formed in a circular or blunt shape, and when the end of the catalyst metal particle is sharp, the end of the CNT 150 may also be sharp. .

As described above, according to the present invention, it is possible to prevent the catalyst from leaking to the cathode electrode or the substrate during the manufacturing process of the emitter for the X-ray tube.

In addition, electron emission efficiency can be improved by uniformly and stably growing CNT, which is an electron-emitting device, on the electrode structure of the X-ray tube.

The present invention has been described with reference to one embodiment shown in the accompanying drawings, but this is only exemplary, and those skilled in the art can understand that various modifications and other equivalent embodiments are possible therefrom. Will be able to. Therefore, the true protection scope of the present invention should be defined only by the appended claims.

110 .. Lower substrate
120 .. Cathode electrode layer
130 .. Catalyst barrier layer
140 .. Catalyst layer
150 .. CNT
160 .. Catalyst control layer
161 .. CNT Growth Department

Claims (17)

Providing a lower substrate;
Forming a cathode electrode layer by applying a metal material on the lower substrate;
Forming a catalyst blocking layer on the cathode electrode layer to block the catalyst from moving to the cathode electrode layer;
Forming a catalyst layer on the catalyst blocking layer;
Forming a catalyst control layer by applying a photosensitive carbon composite material on the catalyst layer;
Providing a CNT growth portion in a predetermined pattern on the catalyst layer by a lithography process; And
Growing CNTs in the CNT growth part;
Method for producing an emitter for an X-ray tube comprising a. According to claim 1,
The lower substrate is a method of manufacturing an emitter for an X-ray tube formed of silicon or glass. According to claim 1,
The step of forming a cathode electrode layer by coating a metal material on the lower substrate is a method of manufacturing an emitter for an X-ray tube to deposit a thin metal film on the lower substrate. According to claim 1,
The metal is silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), Method of manufacturing an emitter for an X-ray tube containing at least one of chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. According to claim 1,
The catalyst blocking layer is a method of manufacturing an emitter for an X-ray tube including at least one of SiO _X , SiN _X , and alumina (Al ₂ O ₃ ). According to claim 1,
Method of manufacturing an emitter for an X-ray tube, characterized in that the thickness of the catalyst blocking layer is formed from 1 to 20 nm. According to claim 1,
The catalyst control layer is a method of manufacturing an emitter for an X-ray tube formed by spin coating or slit coating the liquid photosensitive carbon composite material on the catalyst blocking layer. According to claim 1,
The catalyst control layer is a method of manufacturing an emitter for an X-ray tube containing graphite or organic matter. According to claim 1,
The catalyst layer includes at least one selected from nickel (Ni), iron (Fe), and cobalt (Co), a thermal evaporation method, a sputtering method, an electron beam evaporation method, chemical Method for manufacturing an emitter for an X-ray tube formed through one of the processes selected from Chemical Vapor Deposition (CVD). According to claim 1,
The step of providing a CNT growth portion in a predetermined pattern on the catalyst layer by a lithography process,
Sintering the photosensitive carbon composite material at a temperature of 400 ~ 1000 ℃,
Developing the photosensitive carbon composite material after UV exposure using a photomask to form a patterned CNT growth portion on the catalyst layer, and etching and removing the catalyst layer or the catalyst layer and the catalyst blocking layer after the exposure and development Method of manufacturing an emitter for an X-ray tube comprising a process. The method of claim 10,
The step of growing the CNT,
After removing the catalyst layer or the catalyst layer and the catalyst blocking layer by etching, the CNT growth portion and the catalyst layer are melted at a temperature of 600 to 1000 ° C. for 1 to 600 minutes in an evacuation state, Production method. The method of claim 11,
After the heat treatment, the catalyst of the catalyst layer is introduced into the CNT growth section, and a method for producing an emitter for an X-ray tube is formed with a seed for CNT growth inside the CNT growth section.
According to claim 1,
The step of growing the CNT,
The process of annealing the CNT growth portion (annealing),
A process of growing CNTs on the catalyst barrier layer through a plasma enhanced chemical vapor deposition (PECVD) process or a thermal chemical vapor deposition (PECVD) process that supplies a hydrocarbon gas to the CNT growth part. Method for producing an emitter for an X-ray tube comprising a. An emitter for an x-ray tube produced by the method of claim 1. Lower substrate;
A cathode electrode layer formed on the lower substrate;
A catalyst blocking layer formed on the cathode electrode layer and blocking catalyst from moving to the cathode electrode layer; And
CNT growing on the catalyst blocking layer to emit electrons;
Emitter for an X-ray tube comprising a. The method of claim 15,
The lower substrate is an emitter for an X-ray tube formed of silicon or glass. The method of claim 15,
The catalyst blocking layer includes at least one of SiO _X , SiN _X , and alumina (Al ₂ O ₃ ), and the thickness of the catalyst blocking layer is 1 to 20 nm.

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