KR20200040499A - Flux cleaning method for semiconductor wafer - Google Patents

Abstract

According to the present invention, provided is a semiconductor substrate flux cleaning method which comprises: a step of loading a plurality of substrates on a substrate to a substrate transfer device by a loader; a step of supplying the substrates to a plurality of cleaning chambers by the substrate transfer device and cleaning the substrates by a cleaning liquid spraying device while passing through the cleaning chambers; a step of sucking, liquefying, and collecting vaporized gas among the cleaning liquid sprayed to the cleaning chambers from the cleaning chamber by a liquefaction collecting device during the substrate cleaning process; a step of drying the substrates which move by the substrate transfer device and whose cleaning is completed at a predetermined temperature by a substrate drying device to remove moisture; and a step of unloading the dried substrates which moves by the substrate transfer device by an unloader. The cleaning liquid is a hydrofluoro ether (HFE)-based cleaning liquid. According to the present invention, flux cleaning efficiency of the semiconductor substrate can be improved.

Description

Flux cleaning method for semiconductor wafer

The present invention relates to a semiconductor substrate flux cleaning system and a method thereof, and more specifically, to a system for cleaning flux using a HF (HydroFluoroEther) cleaning solution, enables uniform injection of cleaning solution and improves recovery The present invention relates to a semiconductor substrate flux cleaning system and method capable of improving the flux cleaning efficiency of a semiconductor substrate.

In general, the semiconductor manufacturing process includes a photoresist coating process, a development process (Develop & Bake), an etching process (Etching), a chemical vapor deposition process (Chemical Vapor Deposition), an ashing process, etc. have.

In addition, in the process of performing each of the above processes, a cleaning process (Wet Cleaning Process) is performed to remove contaminants and particles attached to the substrate.

The cleaning process includes a loader that loads substrates such as wafers, a plurality of cleaning chambers that provide space for moving and positioning the substrates loaded by the loader, and a cleaning solution that is configured in each cleaning chamber and injects cleaning liquid to the substrates. Spraying device, rinsing device that injects pure water onto the substrates that have been cleaned to wash the cleaning solution, MBSA device that injects fine bubbles, steam and air onto the substrates that have been rinsed, and hot purified water on the substrates after the MBSA process. High-temperature pure water rinsing device for spraying, a plurality of substrate drying devices for drying the substrate on which the hot water is injected at a predetermined temperature, and an unloader for unloading the substrates after the drying process.

However, since the conventional cleaning process uses a general chemical or deionized water as the cleaning solution, the process of drying the chemical solution or the pure water remaining on the substrate after the cleaning solution spraying process is performed as described above. And high temperature pure water rinse equipment.

However, despite the above processes, there are many problems when considering the tendency of high integration of semiconductor devices and large diameter of the substrate because water phenomena on the substrate are not significantly reduced.

On the other hand, recently, there is no ozone depletion index (ODP) and a low greenhouse gas index (GWP), so an environmentally friendly non-aqueous compound has been developed and used as a cleaning solution. Such a non-aqueous compound is a fluorinated ether-based compound such as HFE, which is environmentally friendly and has excellent cleaning and drying performance, but has a disadvantage of high price.

Thus, in order to solve the above problems, Korean Patent Publication No. 2002-0048911 and Korean Registered Patent No. 10-1226241 have disclosed a cleaning and drying system for a chemical film using HF cleaning liquid.

However, the flux cleaning system of the conventional semiconductor substrate has a configuration in which the cleaning liquid recovery rate of the cleaning liquid recovery device for recovering the cleaning liquid from the cleaning chamber is low, which increases the cost.

In addition, in the case of an injector that injects a cleaning liquid into a cleaning chamber, since it has a plurality of injection nozzles corresponding to the number of substrates, the cleaning liquid must have a structure in which a uniform amount is supplied and injected to each injection nozzle. Since it does not have, it is impossible to spray a uniform cleaning solution for each substrate, and thus there is a problem that the cleaning efficiency is lowered.

Therefore, an object of the present invention is the uniformity of the cleaning solution by filling a plurality of cleaning solution dispersions having a ball shape that uniformly distributes the cleaning solution to a plurality of nozzles inside the injection plate connected to the manifold of the injection device for spraying the cleaning solution. It is to provide a semiconductor substrate flux cleaning system and a method for enabling one injection to improve flux cleaning efficiency of a semiconductor substrate.

In addition, the object of the present invention in the system for cleaning the flux using a HF (HydroFluoroEther) -based cleaning solution, the heat conductivity is high inside the recovery device for recovering the cleaning solution from the chamber of the cleaning device has a ball (Ball) shape Disclosed is a semiconductor substrate flux cleaning system and a method of filling a plurality of cleaning liquid liquefied bodies to improve the recovery rate of the cleaning liquid.

In addition, the object of the present invention is to reduce the cost and reduce the cleaning time by omitting the process of the rinsing device, MBSA device and high-temperature pure rinsing device as the substrate is cleaned using a HF-based cleaning solution having high evaporation power. It is to provide a semiconductor substrate flux cleaning system and method.

Meanwhile, the object of the present invention is not limited to the above-mentioned object, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

According to the present invention, a plurality of substrates are loaded into the substrate transfer device by a loader; A step in which the substrates are supplied to the plurality of cleaning chambers by the substrate transfer device and the substrates are cleaned by the cleaning liquid spraying device while passing through the cleaning chambers; Simultaneously with the substrate cleaning process, a step in which vaporized gas in the cleaning liquid sprayed from the cleaning chamber into the cleaning chamber is sucked and liquefied by the cleaning liquid liquefaction recovery device and recovered; A step in which the substrates, which have been cleaned by the substrate transfer device, have been cleaned are dried at a predetermined temperature by the substrate drying device to remove moisture; Provided is a method of cleaning a semiconductor substrate flux, wherein the dried substrates moved by the substrate transfer device are unloaded by an unloader, and the cleaning solution is an HFE-based cleaning solution.

Here, the washing liquid recovery step through the washing liquid liquefaction recovery device comprises: suctioning vaporized gas among the washing liquid injected into the chamber by a gas suction unit connected to an upper portion of the chamber; The gas sucked through the gas suction unit is liquefied by the gas liquefaction unit; It is preferable to include a step in which the cleaning liquid liquefied in the gas liquefaction section is recovered by the recovery section.

In addition, the liquefaction step through the gas liquefaction unit, the step of cooling the interior of the liquefaction chamber by a cooling coil pipe configured inside the liquefaction chamber; A gas being introduced into a liquefaction chamber connected to a gas recovery pipe of the gas suction unit; A step of liquefying while the gas is cooled and condensed by contacting a gas flowing into the liquefaction chamber while a plurality of cleaning liquid liquefied bodies filled in the liquefaction chamber are cooled by a cooling coil pipe, and the cleaning liquid liquefied body includes platinum or aluminum. It is desirable to have a ball type that provides a void that enables the movement of the gas with a material.

In addition, the step of spraying the cleaning liquid through the cleaning liquid spraying device includes: supplying the cleaning liquid from the cleaning liquid tank to the manifold pipe installed on the upper side of the chamber; A step in which cleaning liquid is supplied from the manifold pipe to the injection plates respectively connected to the branch pipes of the manifold pipe; And a step in which a predetermined amount of cleaning liquid is sprayed from a plurality of spray nozzles in a state in which the cleaning liquid is evenly distributed over the entire internal area of the spray plate by the plurality of cleaning liquid dispersions filled in the spray plate, and the cleaning liquid dispersion comprises: It is desirable to have a ball type that provides voids that allow movement.

Therefore, according to the present invention, a plurality of cleaning liquid dispersions having a ball shape for uniformly dispersing the cleaning liquid into a plurality of nozzles are filled in the inside of the injection plate connected to the manifold of the injection device for spraying the cleaning liquid, thereby uniformizing the cleaning liquid. It is possible to enable one injection to improve the flux cleaning efficiency of the semiconductor substrate.

In addition, in a system for cleaning flux using a HF (HydroFluoroEther) -based cleaning liquid, a plurality of cleaning liquid liquefied liquids having high thermal conductivity and having a ball shape are located inside the recovery apparatus for recovering the cleaning liquid from the chamber of the cleaning apparatus. Filling can improve the recovery rate of the cleaning solution.

In addition, as the substrate is cleaned using the HF cleaning liquid having a high evaporation power, processes of the rinse device, the MBSA device, and the high-temperature pure water rinse device can be omitted to reduce costs and save cleaning time.

Meanwhile, the effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a view showing the configuration of a semiconductor substrate flux cleaning system according to a preferred embodiment of the present invention;
2 and 3 show the semiconductor substrate flux cleaning system of FIG. 1;
4 and 5 are views each showing a cleaning liquid injection device in the semiconductor substrate flux cleaning system of Figure 1; And
6 to 8 are views each showing a configuration of a cleaning liquid recovery device in the semiconductor substrate flux cleaning system of FIG. 1.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 to 8, the semiconductor substrate flux cleaning system according to a preferred embodiment of the present invention is moved by a loader 10 and a substrate transfer device 20 for loading substrates into the substrate transfer device 20. A plurality of cleaning chambers 30 that provide a space in which substrates are positioned, a cleaning liquid ejection apparatus 200 configured in each cleaning chamber 30 and uniformly spraying cleaning liquid to each of the substrates, for cleaning The cleaning solution liquefied to recover the liquefied cleaning solution by inhaling and liquefying the vaporized gas among the cleaning solution injected into the cleaning chamber 30 from the chamber 30, the cleaning moved by the substrate transfer device 20 And a substrate drying apparatus 40 that removes moisture by drying the completed substrates at a predetermined temperature, an unloader 50 that unloads the dried substrates moved by the substrate transfer device 20, and the like.

Here, the loader 10, the substrate transfer device 20, the cleaning chamber 30, the substrate drying device 40 and the unloader 50 may have a known configuration, and detailed description will be omitted. .

In addition, the cleaning liquid is a HFE-based cleaning liquid, and generally has a high vapor pressure and a high surface tension, so that the density is higher than that of water, and thus has high evaporation property and sinks under water when mixed with water (replaces CFC) See the research paper on the applicability of HFEs to industrial cleaners: Clean Technology, Vol. 14, No. 3, September 2008, pp. 184-192).

The cleaning liquid spraying device 200 is a means for uniformly spraying cleaning liquid onto the substrates in a state configured in a plurality of cleaning chambers 30, respectively, so that the substrates are cleaned, and installed on the upper side of the chamber 30 The cleaning liquid is supplied from the cleaning liquid tank (not shown), and the cleaning liquid supplied from the manifold pipe 210 is connected to the manifold pipe 210 and the manifold pipe 210, respectively. The cleaning liquid is injected into the inside of the spraying plate 240 and the spraying plate 240 to be sprayed through, and the cleaning liquid is brought into contact with the cleaning liquid flowing into the inside of the spraying plate 240 so that the cleaning liquid is completely covered. To be evenly distributed on the substrate, so that a certain amount of cleaning liquid is sprayed from a plurality of spray nozzles 230 arranged at regular intervals at the bottom of the spray plate 240, thereby improving the cleaning efficiency It includes a plurality of cleaning liquid dispersion 250 to be improved.

Here, the number of the cleaning liquid injection device 200 and the cleaning chamber 30 is determined according to the substrate movement speed of the substrate transfer device 20 and the evaporation rate of the cleaning liquid, and the cleaning liquid is the HF-based cleaning liquid as described above. In this case, it has three numbers, and the substrate moving speed at this time leaves the third cleaning chamber 30 and the cleaning liquid spraying device 200 after entering the first cleaning chamber 30 and the cleaning liquid spraying device 200. The passage time until the time is set to be 2 minutes 30 seconds to 3 minutes, and through this, it is preferable to make the cleaning efficiency of the substrate the highest.

The manifold pipe 210 has a structure such that the washing liquid supplied from the washing liquid tank (not shown) is dispersed through the branch pipe.

The injection plate 240 may have a configuration connected to the manifold pipe 210 in a pair or a plurality, and the plurality of injection nozzles 230 correspond to the number of substrates moved from the substrate transfer device 20 It can have any number.

The cleaning liquid dispersion 250, while being charged in the interior of the injection plate 240 while suppressing the movement of the cleaning liquid supplied to the upper central portion of the injection plate 240, the cleaning liquid is evenly distributed over the entire internal area of the injection plate 240 As a means to make it possible, it has a ball type that provides a void that enables movement of the cleaning liquid.

Here, the cleaning liquid dispersion 250, through having a ball-like shape as described above, compared to having a hexahedral shape to be distributed while flowing to the side and bottom of the spray plate 240 along the surface upon contact of the cleaning liquid a number of It is possible to ensure that a uniform amount is supplied to all the injection nozzles 230 without being concentrated on any one of the four injection nozzles 230, and through this, it is possible to make the flow rate and pressure rate of the cleaning liquid uniform.

In addition, it is preferable that the cleaning liquid dispersion 250 further has one or a plurality of through holes penetrating the ball-type body so as to further improve dispersion of the cleaning liquid.

Therefore, according to the cleaning liquid spraying apparatus 200, the cleaning liquid supplied from the cleaning liquid tank (not shown) is evenly distributed on the entire area of the spray plate 240 by the multiple cleaning liquid dispersions 250, thereby allowing a plurality of spray nozzles 230 ) The cleaning solution is sprayed at a uniform amount and speed from each, and thus, the cleaning efficiency of the substrate can be maximized.

Here, the cleaning liquid spraying device 200 is connected to a cleaning liquid tank (not shown) in which cleaning liquid is stored, a supply pipe connecting the manifold pipe 210 from the cleaning liquid tank (not shown), a pump configured in the supply pipe, and the supply pipe The control valve may be further included.

On the other hand, in the cleaning chamber 30, the cleaning liquid recovery device (not shown) for recovering the cleaning liquid sprayed inside the chamber 30, and the cleaning liquid collected in the cleaning liquid recovery device (not shown) to the cleaning liquid tank (not shown) A cleaning liquid return device (not shown) for returning may be further included.

 Here, since the cleaning liquid recovery device (not shown) and the cleaning liquid return device (not shown) may have a known configuration, detailed description will be omitted.

The cleaning liquid liquefaction recovery device 100 is a means for sucking the vaporized gas from the cleaning liquid injected into the chamber 30 from the chamber 30 and liquefying it to recover the liquefied cleaning liquid, and is connected to the upper portion of the chamber 30 The gas suction unit 110 for sucking the vaporized gas among the cleaning liquid injected into the chamber 30, the gas liquefaction unit 120 for liquefying the gas sucked through the gas suction unit 110, and the gas liquefaction unit 120 It includes a recovery unit (not shown) for recovering the liquefied cleaning liquid in the cleaning liquid recovery device (not shown) or a cleaning liquid tank (not shown).

The cleaning liquid liquefaction recovery apparatus 100 of the present invention further includes a mount portion 140 that provides a space for allowing the gas suction portion 110 and the gas liquefaction portion 120 to be compactly positioned in one frame.

Here, in the mount portion 140, a frame having a hexahedral shape is divided into upper and lower spaces, a gas suction unit 110 is formed at an upper side, and a gas liquefaction unit 120 is configured at a lower side, and a cleaning liquid liquefaction recovery device ( 100) may have a compact configuration, and a plurality of casts may be configured at a lower end, for example, to be conveniently moved near a separation tank of a recovery unit (not shown) having a predetermined volume.

The gas suction unit 110 is connected to the upper portion of the chamber 30 and is a means for sucking the vaporized gas from the cleaning liquid injected into the chamber 30 and moving the gas into the gas liquefaction unit 120, the chamber 210 The gas recovery pipe 111 connecting the upper portion and the gas liquefaction unit 120 and the gas recovery pipe 111 are configured to generate a suction flow so that the gas moves from the chamber 210 to the gas liquefaction unit 120 And a blower fan 113.

The gas liquefaction unit 120 is a means for liquefying the gas sucked through the gas suction unit 110, and is connected to the gas recovery pipe 111 of the gas suction unit 110 and the liquefaction chamber 121 through which gas is introduced , Cooling chiller 123 and liquefaction chamber 121 that are configured inside the liquefaction chamber 121 to cool the interior of the liquefaction chamber 121 and supply cold air to the cooling coil pipe 122 ) Is cooled by the cooling coil pipe 122 and is cooled inside the liquefaction chamber 121, while suppressing the movement of the gas flowing into the liquefaction chamber 121, a plurality of cleaning liquid liquefaction liquids (Liquid) 124).

The liquefaction chamber 121, more preferably, may be configured to be connected in series to a plurality of lower spaces of the mount portion 140, through which, the liquefaction chamber 121 to the mount portion 140 is compact Even if configured, it is good to provide a high liquefaction rate.

In addition, the liquefaction chamber 121, it is preferable that the cooling coil pipe 122 is bent in a zigzag structure therein, wherein a plurality of partition walls provide a gas flow path in a zigzag structure so that the gas is sufficiently liquefied good.

In addition, the liquefaction chamber 121 includes an exhaust pipe 125 through which condensation (condensation) from inside allows gas that is not liquefied to be exhausted to the outside.

The cooling chiller 123 is a means for constructing a refrigeration cycle device together with a cooling coil tube 122 that provides a function of an evaporator, and may have a compressor, a condenser, and an expansion valve.

On the other hand, in the present invention, the cooling air circulated inside the cooling chiller 123 and the cooling coil pipe 122 is based on 100 parts by weight of the refrigerant together with a known cooling refrigerant (or cooling water) such as R-22. It is preferably provided by platinum powder having a high thermal conductivity having 10 to 10 parts by weight.

Here, so that the cold air is provided through the platinum powder having 5 to 10 parts by weight based on 100 parts by weight of the refrigerant, when the platinum powder is less than the weight part, the synergistic effect of thermal conductivity is insufficient, and the platinum powder is the weight In the case of exceeding the portion, the thermal conductivity is increased, but problems such as sedimentation or movement speed of platinum powder having a particle structure are lowered depending on the phase transition state of the refrigerant compared to the refrigerant having a phase change. It is good to have significance.

The cleaning liquid liquefaction body 124 is a means for allowing the gas to cool and condense while being sufficiently contacted with the gas while suppressing the movement of the gas while being cooled by the cooling coil tube 122 inside the liquefaction chamber 121. , It has a high thermal conductivity and a light platinum or aluminum material, and has a ball type that provides air gaps that enable gas movement.

Here, the cleaning liquid liquefied body 124, through having a material having a high thermal conductivity and a ball-type shape as described above, compared to having a hexahedral shape, the cleaning liquid that is condensed and liquefied upon contact with a gas is liquefied along the surface by gravity. Collecting efficiency can be maximized by allowing it to settle while flowing to the bottom of the chamber 121.

In addition, it is preferable that the cleaning liquid liquefaction body 124 further has one or a plurality of through holes penetrating through the ball-type body so as to improve the liquefaction rate of the gas by increasing the contact area while further improving the movement of the gas.

Therefore, according to the gas liquefaction unit 120, the liquefaction rate of the gas sucked through the gas suction unit 110 is maximized by a plurality of cleaning liquid liquefaction bodies 124, and the cleaning solution recovery rate can be maximized.

The recovery unit (not shown) is a recovery means for recovering the cleaning liquid liquefied in the gas liquefaction unit 120 to a cleaning liquid recovery device (not shown) or a cleaning liquid tank (not shown), and the cleaning liquid is recovered from the gas liquefaction unit 120 A liquefied liquid recovery pipe, a separation tank connected to the liquefied liquid recovery pipe to separate the recovered cleaning liquid and water, a return pipe connecting the separation tank and the cleaning liquid recovery device (not shown) or a cleaning liquid tank (not shown), and a pump coupled to the return pipe And a control valve configured in the return pipe.

Here, one end of the liquefied liquid recovery pipe is connected to the lower surface of the liquefaction chamber 121 and the other end is connected to the upper portion of the separation tank to allow the settling and collected washing liquid at the bottom of the liquefaction chamber 121 to enter the separation tank.

In addition, one end of the return pipe is connected to the lower portion of the separation tank, and the other end is connected to a cleaning liquid recovery device (not shown) or a cleaning liquid tank (not shown).

In addition, it is preferable that a water drain pipe through which water is drained is connected to the upper portion of the separation tank.

Therefore, according to the cleaning liquid liquefaction recovery device 100, through the configuration in which the cleaning liquid gas vaporized after being sprayed onto the substrate is recovered after being liquefied, the loss of expensive HF-based cleaning liquid sprayed on the substrate to dry the substrate can be minimized. have.

In addition, when the gas of the cleaning liquid is liquefied in the cleaning liquid liquefaction recovery device 100, the gas is liquefied while passing through a plurality of cleaning liquid liquefaction bodies 124 filled in the liquefaction chamber 121, thereby improving the liquefaction efficiency of the gas and liquefying It is possible to minimize the loss of the cleaning solution by maximizing the settling and collecting efficiency of the cleaning solution.

Hereinafter, a method of cleaning a semiconductor substrate flux having the above-described configuration will be described.

First, a plurality of substrates are loaded into the substrate transfer device 20 by the loader 10.

Subsequently, the substrates are supplied to the plurality of cleaning chambers 30 by the substrate transfer device 20 and the substrates are cleaned by the cleaning liquid spraying device 200 while passing through the cleaning chambers 30.

Here, the substrate cleaning process through the cleaning liquid injection device 200, the step of supplying the cleaning liquid from the cleaning liquid tank (not shown) to the manifold pipe 210 installed on the upper side of the chamber 30, and the manifold pipe 210 The cleaning liquid is supplied from the manifold pipe 210 to the injection plates 240 connected to the respective branch pipes, and the cleaning liquid is sprayed by the plurality of cleaning liquid dispersions 250 charged in the injection plate 240. It includes a step of spraying a constant amount of the cleaning liquid from a plurality of spray nozzles 230 in a state evenly distributed in the interior of the entire surface, the cleaning liquid dispersion 250, the ball providing a gap to enable the movement of the cleaning liquid It has a (Ball) type, through which the cleaning efficiency of the substrate is maximized.

On the other hand, the cleaning liquid is a HFE-based cleaning liquid, and generally has a high vapor pressure and a high surface tension, so that the density is higher than that of water, and thus has high evaporation property and sinks under water when mixed with water (replaces CFC) See the research paper on the applicability of HFEs to industrial cleaners: Clean Technology, Vol. 14, No. 3, September 2008, pp. 184-192).

In addition, the cleaning liquid injection device 200 and the cleaning chamber 30 have three numbers when the cleaning liquid is a H-type cleaning liquid as described above, and the substrate moving speed at this time is the first cleaning chamber 30 and It is preferable that the passage time from entering the cleaning liquid injector 200 to leaving the third cleaning chamber 30 and the cleaning liquid injector 200 is 2 minutes 30 seconds to 3 minutes.

Subsequently, at the same time as the substrate cleaning process, vaporized gas among the cleaning liquid sprayed from the cleaning chamber 30 into the cleaning chamber 30 is sucked and liquefied by the cleaning liquid liquefaction recovery apparatus 100 and then recovered.

Here, the cleaning liquid recovery process through the cleaning liquid liquefaction recovery device 100, the step of inhaling the vaporized gas in the cleaning liquid injected into the chamber 30 by the gas suction unit 110 connected to the upper portion of the chamber 30 and , The gas sucked through the gas suction unit 110 is liquefied by the gas liquefaction unit 120, and the cleaning liquid liquefied in the gas liquefaction unit 120 is recovered by a recovery unit (not shown) cleaning device (not shown) City) or a cleaning liquid tank (not shown), wherein the gas of the cleaning liquid is liquefied while passing through a plurality of cleaning liquid liquefied bodies 124 filled in the interior of the liquefaction chamber 121 The liquefaction efficiency of the gas is improved and the settling and collection efficiency of the liquefied cleaning liquid is maximized to minimize the loss of the cleaning liquid.

At this time, the liquefaction step through the gas liquefaction unit 120, a step in which the inside of the liquefaction chamber 121 is cooled by a cooling coil tube 122 configured inside the liquefaction chamber 121, and the gas suction unit 110 The gas is introduced into the liquefaction chamber 121 connected to the gas recovery pipe 111 of the air, and a plurality of cleaning liquid liquefied bodies 124 filled in the liquefaction chamber 121 are cooled by the cooling coil pipe 122 In contact with the gas flowing into the liquefaction chamber 121, the gas is cooled and condensed while being condensed, and the cleaning liquid liquefaction body 124 has a platinum or aluminum material to form a void that enables the movement of the gas. It has a provided ball type.

Subsequently, the substrates that have been cleaned moved by the substrate transfer device 20 are dried at a predetermined temperature by the substrate drying device 40 to remove moisture.

Subsequently, the dried substrates moved by the substrate transfer device 20 are unloaded by the unloader 50.

Therefore, according to the above, the ball to uniformly disperse the cleaning solution in a plurality of injection nozzles 230 inside the injection plate 240 connected to the manifold pipe 210 of the cleaning solution injection device 200 for spraying the cleaning solution ( By filling the plurality of cleaning liquid dispersions 250 having a ball shape, it is possible to uniformly spray the cleaning liquid, thereby improving the flux cleaning efficiency of the semiconductor substrate.

In addition, in a system for cleaning flux using a HF (HydroFluoroEther) -based cleaning solution, the heat conductivity is high and a ball shape is formed inside the cleaning solution liquefaction recovery device 100 for recovering the cleaning solution from the cleaning chamber 30. A plurality of cleaning liquid liquefied bodies having 124 is filled can improve the recovery rate of the cleaning liquid.

In addition, by cleaning the substrate using a HF-based cleaning liquid having a high evaporation power, it is possible to omit the processes of the rinse device, MBSA device and high-temperature pure rinse device as in the prior art, thereby reducing cleaning cost and saving cleaning time. have.

 In the above-described present invention, specific embodiments have been described, but various modifications can be carried out without departing from the scope of the present invention. Therefore, the scope of the invention should not be determined by the described embodiments, but should be defined by the equivalents of the claims and claims.

Claims (5)

A step in which a plurality of substrates are loaded into the substrate transfer device 20 by the loader 10;
A step in which the substrates are supplied to the plurality of cleaning chambers 30 by the substrate transfer device 20 and the substrates are cleaned by the cleaning liquid spraying device 200 while passing through the cleaning chambers 30;
Simultaneously with the substrate cleaning process, a step in which vaporized gas among the cleaning liquid sprayed from the cleaning chamber 30 into the cleaning chamber 30 is sucked and liquefied by the cleaning liquid liquefaction recovery device 100 and recovered;
A step in which the substrates cleaned by the substrate transfer device 20 are cleaned and dried at a predetermined temperature by the substrate drying device 40 to remove moisture;
The dried substrates moved by the substrate transfer device 20 include the step of unloading by the unloader 50,
The cleaning solution,
A semiconductor substrate flux cleaning method, characterized in that it is a HFE-based cleaning liquid. The method of claim 1, wherein the washing liquid recovery step through the washing liquid liquefaction recovery device 100,
Inhaling the vaporized gas in the cleaning solution injected into the chamber 30 by the gas suction unit 110 connected to the upper portion of the chamber 30;
The gas sucked through the gas suction unit 110 is liquefied by the gas liquefaction unit 120;
A method of cleaning a semiconductor substrate flux, comprising a step in which the cleaning liquid liquefied in the gas liquefaction unit 120 is recovered by a recovery unit (not shown). According to claim 2, The liquefaction step through the gas liquefaction unit 120,
Cooling the inside of the liquefaction chamber 121 by a cooling coil pipe 122 configured inside the liquefaction chamber 121;
Gas is introduced into the liquefaction chamber 121 connected to the gas recovery pipe 111 of the gas suction unit 110;
The plurality of cleaning liquid liquefied bodies 124 filled in the liquefaction chamber 121 are in contact with the gas flowing into the liquefaction chamber 121 in a state cooled by the cooling coil pipe 122, and the gas is liquefied while cooling condensation. Including steps,
The washing liquid liquefied body 124,
A method of cleaning a semiconductor substrate flux having a platinum or aluminum material and having a ball type that provides an air gap that enables movement of a gas. The cooling air circulated in the cooling coil pipe (122),
A semiconductor substrate flux cleaning method characterized by being provided by platinum powder having 5 to 10 parts by weight based on 100 parts by weight of the refrigerant together with a cooling refrigerant (or cooling water). The method of claim 1, wherein the cleaning liquid injection step through the cleaning liquid injection device 200,
A step in which the cleaning liquid is supplied from the cleaning liquid tank (not shown) to the manifold pipe 210 installed on the upper side of the chamber 30;
Washing liquid is supplied from the manifold pipe 210 to the injection plates 240 connected to the branch pipes of the manifold pipe 210;
A certain amount of cleaning liquid is sprayed from a plurality of spray nozzles 230 in a state in which the cleaning liquid is evenly distributed over the entire internal area of the spray plate 240 by the plurality of cleaning liquid dispersions 250 filled in the spray plate 240 Including steps,
The washing liquid dispersion 250,
A method of cleaning a semiconductor substrate flux, characterized by having a ball type that provides voids that enable movement of the cleaning liquid.

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