KR20200039568A - Mirror device for an interferometer device, interferometer device, method for producing a mirror device for an interferometer device, and method for producing an interferometer device - Google Patents

Abstract

The present invention relates to a mirror device (1) for an interferometer device (Int), which includes a mirror layer (3) having a fixing part (B) surrounding the mirror layer (3) at least partially in the lateral direction, and a substrate (2) on which the fixing part (B) is mounted. The mirror layer (3) is mechanically clamped through the fixing part (B), and the fixing part (B) shows a curve (K) having a radius which changes in azimuth when viewed in a plan view of the substrate (2).

Description

MIRROR DEVICE FOR AN INTERFEROMETER DEVICE, INTERFEROMETER DEVICE, METHOD FOR PRODUCING A MIRROR DEVICE FOR AN INTERFEROMETER DEVICE, AND METHOD FOR PRODUCING AN INTERFEROMETER DEVICE}

The present invention relates to a mirror device for an interferometer device, an interferometer device, a method for manufacturing a mirror device for an interferometer device, and a method for manufacturing an interferometer device.

To minimize the tunable spectral filter, the Fabry-Perot interferometer (FPI) can preferably be implemented with MEMS technology. In this case, the fact that a cavity consisting of two planar parallel, high-reflection mirrors with a distance (cavity length) in the optical wavelength range shows that the cavity length exhibits a large transmittance only for wavelengths corresponding to an integer multiple of 1/2 wavelength. Is used. The cavity length can be changed, for example, by electrostatic or piezoelectric operation, resulting in a spectral adjustable filter element. Most of the known adjustable FPI uses electrostatic operation of the mirror (unlike the piezoelectric operation described above), and the mirror is often designed as a membrane. In this case, a voltage is applied between two electrodes located on the plane of the two mirrors, and the two mirrors move due to electrostatic attraction. Conventional film mirrors include at least one partially conductive semiconductor material. Due to the extreme extreme aspect ratios (lateral dimension of the mirror compared to the layer thickness, substantially optical aperture), the resilience caused by bending stress is usually due to film stress, usually based on normal tensile prestress. It can be neglected compared to resilience.

In most cases, FPI structures are defined by a sacrificial layer etching process with a microstructure technique, film mirrors are freed, perforated holes are used, and the etching process can be controlled. However, this generally suffers from large process variations with respect to the etch rate. The necessary clamping of the FPI mirror film is usually realized by the remnants of the sacrificial layer, for example a photoresist or oxide layer. However, since the process variation in the etching process is large, the variation generally appears in relation to the exemption of the mirror, and thus a different film size. In addition, the shape of the etched edge is substantially a rescaling of the placement of the etch holes, which may limit design freedom. Thus, a lateral etch stop for the sacrificial layer etching process is technically very desirable to reduce the tolerance to be maintained and increase design freedom.

US 2012/050751 describes a controllable Fabry-Perot interferometer of MEMS architecture. The interferometers each contain mirror layers as a film. The mirror layer can be placed on the wafer.

An object of the present invention is to provide a mirror device for an interferometer device, an interferometer device, a method for manufacturing a mirror device for an interferometer device, and a method for manufacturing an interferometer device, with increased stability compared to circular clamping.

The present invention relates to a mirror device for an interferometer device according to claim 1, an interferometer device according to claim 6, a method for manufacturing a mirror device for an interferometer device according to claim 11, and a manufacturing method for an interferometer device according to claim 14 Provides a method.

Preferred improvement examples are subject of the dependent claims.

The idea underlying the present invention is to provide a mirror device for an interferometer device having a clamping of a mirror layer or mirror film with a fixing part. Also provided is a method of manufacturing a mirror device and an interferometer device characterized by forming a clamping for a mirror layer or at least partially exempt mirror film. During manufacture, the fixture preferably allows the definition of an etch stop for the method of exemption of the mirror layer. By means of the various radial shapes of the fixture as clamping, the possible clamping force of the mirror layer relative to the fixture can be increased compared to the circular configuration without significantly reducing the mirror planarity. The advantage of curved clamping is that it can increase stability compared to circular clamping.

According to the present invention, a mirror device for an interferometer device comprises: a mirror layer having a fixing part at least partially surrounding the mirror layer in a lateral direction; And a substrate on which the fixing portion is mounted, and the mirror layer is mechanically clamped through the fixing portion, and when viewed in a plan view of the substrate, the fixing portion exhibits a curve having a radius that changes in azimuth. In particular, the fixing part is formed to completely surround the mirror layer or to at least partially surround the mirror layer.

In order to maintain or achieve a predetermined or predetermined tensile prestress, a specific clamping of a mirror film, especially a mirror layer, may be required, which clamping force must be able to withstand the necessary clamping force without significant yielding and without reduction in mirror flatness or parallelism. .

According to a preferred embodiment of the mirror device, the fixing part completely surrounds the mirror layer in the lateral direction and the curve represents a closed curve.

The curve can be a substantially closed curve.

According to a preferred embodiment of the mirror device, the curve represents a sine wave shape, a gear shape, a tooth shape or a polygonal line.

According to a preferred embodiment of the mirror device, the fixing part is formed as a clamp for the mirror layer to the substrate.

For example, by depositing the corresponding materials from the layers of the mirror device, lateral tensile stress can be applied essentially to the mirror device and clamping.

The azimuthal direction may preferably mean one direction in the plane of the mirror layer in a plan view of a plane-parallel extension of the mirror layer.

According to a preferred embodiment of the mirror device, the mirror layer comprises a tensile prestress.

According to the invention, the interferometer device comprises a first mirror device and a second mirror device arranged substantially parallel to it, said first mirror device and / or said second mirror device being a mirror device according to the invention And a distance between the first mirror device and the second mirror device, since at least one of the mirror devices is disposed to be movable in a direction perpendicular to the plane extension of the mirror layer compared to each other mirror device. Can change.

According to a preferred embodiment of the interferometer device, the first mirror device and the second mirror device each include separate substrates, or one of the mirror devices forms a substrate for another mirror device.

According to a preferred embodiment of the interferometer device, the first mirror device and the second mirror device simultaneously include a common substrate.

According to a preferred embodiment of the interferometer device, the second mirror device extends beyond the first mirror device in the lateral direction, and the first mirror device and the second mirror device include respective fixtures on a common substrate.

According to a preferred embodiment of the interferometer device, the second mirror device has a small or equal size in the lateral direction to the first mirror device, and the second mirror device is disposed directly on the first mirror device by its fixing portion, and the first The mirror device itself forms the substrate of the second mirror device.

According to the present invention, a method of manufacturing a mirror device for an interferometer device comprises providing a substrate; Providing a sacrificial layer on the substrate; Forming a trench structure in the sacrificial layer that extends completely through the sacrificial layer to the substrate and exhibits a curve with a radius that changes in azimuth when viewed in plan view of the top surface of the sacrificial layer; Introducing an etch stop material or a mirror material into the trench structure; And providing a mirror material on the planar upper surface of the sacrificial layer such that the mirror material extends laterally on the planar upper surface of the sacrificial layer between the trench structures and at least partially over the trench structure. Includes.

The method can preferably feature the features already mentioned with respect to the mirror device and the interferometer device and their advantages, and vice versa.

According to a preferred embodiment of the method, the trench structure is formed in a plan view of the top surface of the sacrificial layer to exhibit a closed curve representing a sinusoidal, geared, toothed or broken line.

According to a preferred embodiment of the method, at least one etching hole is formed into the mirror layer and the sacrificial layer between the substrate and the mirror layer is at least partially removed by the etching method.

According to the present invention, a method of manufacturing an interferometer device comprises providing a first mirror device and a second mirror device, the first mirror device being produced according to the method according to the invention. Then, providing a second sacrificial layer to the first mirror device; Forming a second trench structure in the second sacrificial layer that extends completely through the second sacrificial layer to the first mirror device and exhibits a curve with a radius that changes azimuthally in plan view of the top surface of the second sacrificial layer ; Introducing an etch stop material or mirror material into the second trench structure; And providing the mirror material on the planar upper surface of the second sacrificial layer and at least partially over the planar upper surface of the second sacrificial layer laterally between the second trench structures. Includes steps.

The second trench structure can preferably extend through the second sacrificial layer to the common substrate of the two mirror devices or only to the mirror layer of the first mirror device.

Further features and advantages of embodiments of the present invention will appear in the following description with reference to the accompanying drawings.

Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.

1A, 1B, 1C, and 1D are side cross-sectional views of a mirror device during manufacturing a mirror device according to a method according to an embodiment of the present invention,
2A, 2B, 2C and 2D are side cross-sectional views of a mirror device during manufacturing a mirror device according to a method according to another embodiment of the present invention,
3 is a schematic plan view showing a curve of a fixing part according to an embodiment of the present invention,
4 is a side sectional view of a mirror device of an interferometer device according to an embodiment of the present invention,
5 is a side cross-sectional view of a mirror device of an interferometer device according to another embodiment of the present invention,
6 is a block diagram of the method steps according to the present invention.

In the drawings, the same reference numbers denote the same or functionally identical elements.

1A, 1B, 1C and 1D respectively show schematic side cross-section views of a mirror device during manufacture of the mirror device according to a method according to an embodiment of the present invention.

The sequence of FIGS. 1A-1D shows a first possibility of an embodiment and definition of an etch stop that can preferably form a fixture B.

The sacrificial layer 4 (4b) in FIG. 1A is provided on the substrate 2. In this case, the substrate 2 may include additional layers. 1B shows additional process steps in which the sacrificial layers 4 and 4b are patterned such that trench structures 5 are formed in the sacrificial layer 4. The trench structure 5 may exhibit a curve having a radius that changes in azimuth when viewed in plan view (FIG. 3). In FIG. 1C, in another step, an etch stop material 6 can be provided into the trench structure 5 and on the sacrificial layers 4, 4b. After partially removing the etch stop material 6 from the sacrificial layer 4 of FIG. 1D, for example by re-grinding or polishing, the substantially planar upper surface 4a of the sacrificial layers 4, 4b It can be made, and the etch stop material 6 remains in the trench structure 5 so that the etch stop material 6 can form a planar surface with the top surface 4a of the sacrificial layer 4.

Patterning may be performed, for example, by a lithography process (performed by an etching process). The etch stop layer preferably features a higher etch selectivity than the sacrificial layer, and the etch stop material may remain unetched while later etching the sacrificial layer. Subsequently, a mirror layer (not shown) can be provided on the sacrificial layer 4 and at least partially over the etch stop layer, and the etch stop layer can be used as a fixing of the mirror layer, for example clamping. Instead of regrinding, an optional rethinning step for planarization may be performed, for example a chemical-mechanical polishing or etching step.

The fixing part B is preferably used for film clamping of the mirror layer which can absorb the stress generated without being greatly deformed. The planar shape of the sacrificial layer surface and the planar shape of the etch stop material on the top side can preferably define clamping.

2A, 2B, 2C and 2D respectively show schematic side cross-section views of a mirror device during manufacture of the mirror device according to a method according to another embodiment of the present invention.

In Fig. 2A, the sacrificial layer 4 on the substrate 2 (when forming the first mirror device); Alternatively, a second sacrificial layer 4b (when forming the second mirror device) may be provided. In this case, the substrate 2 may comprise additional layers, for example an additional sacrificial layer or electrode layer. Patterning can be done in the sacrificial layers 4 and 4b so that the trench structure 5 can be formed in the sacrificial layer 4. This trench structure 5 can represent a curve with radius or radius coordinates that change in azimuth when viewed in plan view (FIG. 3).

In this case, the curve may represent an edge region having an edge width including an inner face and an outer face in a radial direction, wherein the inner face and the outer face show the same or different radial curve shapes or changes in their radius when viewed in plan view. It can contain.

The embodiment of the mirror device 1 in the manufacturing stage of FIG. 2A may preferably correspond to that of FIG. 1B. The manufacturing of the mirror device 1 in the embodiment of FIG. 2B is carried out by means of one or more mirror materials 7 instead of the etch stop material of FIG. 1C onto the planar upper surface 4a of the sacrificial layer 4 and the trench structure 5. ) Is different from the embodiment of FIG. 1C in that it can be introduced into the. The mirror layer 3 may include a number of partial layers.

When a second mirror device is manufactured, a mirror material 7 can be introduced onto the substantially planar surface 4c of the second sacrificial layer 4b and into the second trench structure 5b. The introduced mirror material 7 can form a mirror layer 3 on the sacrificial layers 4 and 4b, which mirror material 7 is in the region of the trench structure 5 opposite the substrate 2 on the upper side. May have a step difference, which may be caused by the introduction. The mirror material 7 in the trench structure 5 and on the planar surface 4a of the sacrificial layer 4 can preferably be covered at least partially or completely laterally at the edges of the trench structure 5. The mirror material 7 in the trench structure 5 is in the form of a clamping of the mirror layer 3 on the substrate 2, since the fixing part B can preferably be fixed vertically on the substrate 2 Preferably, the fixing portion B is formed. The next process step is shown in Fig. 2c, where one or more etch holes L can be formed into the mirror layer 3, preferably formed between fixtures that can form a closed curve (Fig. 3). Can be, the sacrificial layers 4 and 4b under the mirror layer 3 can be removed by an etching process (Fig. 2d). The fixing part (B) preferably has a higher etching resistance than the sacrificial layer, preferably the oxide, such as silicon dioxide, together with the mirror material (7), thereby exempting the mirror layer (3) as a mirror film , The fixing part B can preferably act as a lateral etching stop. The lateral region outside the fixing portion B may be maintained or removed. The sacrificial layer under the mirror layer can preferably be completely removed. The etch stop can be resistant to longer etch times. By this method, preferably, separate deposition of the etch stop material and reshining by complicated polishing can be omitted. The mirror material can be deposited directly onto the sacrificial layer and into the trench. Etching holes can be formed by patterning the mirror layer.

The free zone of the mirror layer does not need to be determined only by the pattern and process variations of the etching holes, but because a sufficiently long etching process is used, it is determined by the profile of the etching stop itself, so the definition of the film, especially the film diameter, by the etching stop It can be improved a lot.

To apply tensile prestress, the mirror layer 3 can preferably be prestressed. To this end, as the clamping, the fixing part B is preferably designed to absorb a correspondingly high clamping force F = Aσ. In the above equation, A is the clamping area of the mirror film and σ is the prestress. The clamping force can act radially on the clamping (fixed portion B), and large deformation of the clamping structure (fixed portion B and mirror membrane) can be prevented by proper design of the mold. Fixings of varying radius may have higher stiffness against bending than simple rounds, which is also desirable when the thickness of the mirror membrane (and hence clamping) is small. As a result, a high flatness of the center of the mirror film can be achieved.

3 is a schematic plan view of a curve of a fixing part according to an embodiment of the present invention.

Embodiments in which the trenches (5, 5b in FIG. 2) formed in the radially inner side represent the curve shown in FIG. 3, and the outer surface is limited by, for example, a simple circle are also possible. In the top view of the substrate, the fixture or trench structure can exhibit curves K, K2 in a second mirror device having a radius that varies with azimuth. The curves K and K2 completely surround the mirror layer laterally and appear as closed curves. The closed curve may represent a sine shape, a gear shape, a tooth shape or a broken line. Due to the deviation from the circle, there may be more fixing contact with the substrate at different positions in the radial direction during rotation, resulting in a greater clamping force being transmitted to the substrate, that is to say a stronger film clamping or mirror Clamping can be realized. That is, stiffness against radial tension may be increased. The shape of the curve K can include different deformations, for example, represented by polar coordinates according to r (φ), in which case x = r (φ through general coordinate transformation with respect to the x and y values of the boundary line. ) cosφ; y = r (φ) sinφ is given.

The curve can have a periodic structure with mostly azimuth. Interruption of periodicity may be possible, for example, if the passage of the electrical leads of the mirror device requires different patterns of patterning. Compared to a circular path or a non-modulating radius, the rigidity of the clamping can be advantageously significantly improved (increased).

4 is a schematic side sectional view of a mirror device of an interferometer device according to an embodiment of the present invention.

On the substrate 2, a first mirror device SP1 and a second mirror device SP2, or at least partially stacked mirror devices are arranged to interferometer device Int, preferably Fabry as a microscopic spectrometer -Perot interferometer is formed. According to FIG. 4A, two mirror devices SP1 and SP2 can be disposed on the same common substrate 2. In this case, the first mirror device may include a fixing part B1 on the common substrate 2, and the second mirror device SP2 may include a second fixing part B2 on the common substrate 2. The fixing parts B1 and B2 may be arranged to be offset from each other in the lateral direction. The mirror devices SP1 and SP2 may be spaced apart from each other by a distance d between their mirror layers (film). In this case, at least one mirror membrane can be actuated relative to the other mirror membrane, ie the distance d can be arranged laterally, for example in or on the mirror membrane and in the fixing parts B1, B2 ( (Not shown) can be changed as in FIG. 4B by the working electrode. The operation of the mirror device can be performed electrostatically, for example. 4A and 4B show a side section of the mirror device around the fixture, where the mirror membrane can further extend in the x direction. In this case, it is possible for each or one of the mirror devices to include an exempt mirror film or mirror layer on the remaining sacrificial layer (not shown).

Meanwhile, FIG. 4B shows an embodiment in which the second mirror device SP2 is completely and the second fixing part B2 is disposed on the first mirror device SP1. Both may have the same lateral size (not shown), or the second mirror device SP2 may include a smaller and / or at least lateral offset size. As a result, the first mirror device itself with a mirror layer can be used as a substrate for the second mirror device, and the manufacturing process according to the invention for the second mirror device SP2 can be performed on the substrate. In this case, it is possible for each or one of the mirror devices to include an exempt mirror film or mirror layer on the remaining sacrificial layer (not shown). The mirror devices SP1 and SP2 can comprise a complete mirror system, that is, a layer system composed of individual layers such as a Bragg mirror or a metal mirror with a Si / SiN or Si / SiCN layer stack. . It is also possible to have a Bragg mirror with gas or vacuum as a low refractive index material, for example a Si / air mirror in which two silicon layers of the mirror can be spaced apart. In the clamping area, two silicon partial layers of the mirror device can be provided by appropriate removal of the sacrificial layer in this area.

5 is a schematic side cross-sectional view of a mirror device of an interferometer device according to another embodiment of the present invention.

5 is a first mirror device SP1 that can be formed according to the embodiment of FIG. 4A with the difference that a portion of the sacrificial layers 4 and 4b can still be disposed between the two fixing parts B1 and B2. ), The arrangement of the second mirror device SP2 can be illustrated. During manufacture, a connecting element VS can be produced by further patterning of the second sacrificial layer 4b, which can be introduced into an additional trench of the second sacrificial layer (not shown). ). This trench can be filled with the mirror material of the second mirror device, similar to the fixture, but can only extend to the mirror layer of the first mirror device (appropriate deposition process). Between the mirror devices, a number of such connecting elements can preferably be present outside the optical aperture or working area of the mirror layer.

In another embodiment, the structure of FIG. 5 can be applied to each mirror device comprising two mirror layers 3a and 3b, each having one anchor that can form a common anchor (B).

The portion of the sacrificial layer 4, 4b between the fixtures can stabilize the fixture and its position.

There may be air gaps between the mirror layers. It is also possible to continue this principle with the use of additional mirror partial films. That is, a single Si / air mirror can consist of additional Si / air layer pairs.

By this arrangement of the sacrificial layers 4 and 4b between the fixing regions B1 and B2, the sacrificial layers 4 and 4b can be protected in the clamping region before etching. This method is also possible for other types of mirrors such as Si / SiN (silicon, silicon nitride) and Si / SiCN (silicon carbon nitride) layer stacks.

6 shows a block diagram of a method step according to the invention.

A method of manufacturing a mirror device for an interferometer device includes providing a substrate (S1); Providing a sacrificial layer on the substrate (S2); Forming a trench structure in the sacrificial layer (S3), which extends completely through the sacrificial layer to the substrate and exhibits a curve with a radius that changes azimuthally in plan view of the top surface of the sacrificial layer; Introducing an etch stop material or a mirror material into the trench structure (S4); And providing a mirror material on the planar upper surface of the sacrificial layer such that the mirror material extends laterally on the planar upper surface of the sacrificial layer between the trench structures and at least partially over the trench structure (S5). ).

As a further result, the method for manufacturing the interferometer device may include the step S6 of providing a first mirror device and a second mirror device, wherein the first mirror device is produced by the method according to the invention. Then, providing a second sacrificial layer on the first mirror device (S7); Forming a second trench structure in the second sacrificial layer, which extends completely through the second sacrificial layer to the first mirror device and exhibits a curve with a radius that changes azimuthally in plan view of the top surface of the second sacrificial layer Step S8; Introducing an etch stop material or a mirror material into the second trench structure (S9); And providing a mirror material on the planar upper surface of the second sacrificial layer so that the mirror material extends laterally on the planar upper surface of the second sacrificial layer between the trench structures and at least partially over the second trench structure. Step (S10) is performed.

The present invention has been described above with reference to preferred embodiments, but the present invention is not limited thereto and may be modified in various ways.

1 mirror device
2 substrate
3 mirror layers
4 sacrificial layers
5 trench structure
7 mirror material

Claims (14)

As a mirror device (1) for an interferometer device (Int),
-Said mirror layer (3) having a fixing part (B) which at least partially surrounds the mirror layer (3), and
-A substrate 2 on which the fixing part B is mounted, the mirror layer 3 is mechanically clamped through the fixing part B, and the fixing part B is the substrate 2 Mirror device 1, which shows a curve K having a radius that changes in azimuth when viewed in a plan view for. The mirror device (1) according to claim 1, wherein the fixing part (B) completely surrounds the mirror layer (3) in the lateral direction, and the curve (K) represents a closed curve. The mirror device (1) according to claim 2, wherein the curve (K) represents a sine wave shape, a gear shape, a tooth shape or a polygonal line. 4. The mirror device (1) according to any one of the preceding claims, wherein the fixing part (B) is formed as a clamping for the mirror layer (3) to the substrate (2). 5. Mirror device (1) according to any one of the preceding claims, wherein the mirror layer (3) comprises a tensile prestress. An interferometer device (Int) comprising a first mirror device (SP1) and a second mirror device (SP2) disposed substantially parallel to it,
The first mirror device SP1 and / or the second mirror device SP2 includes the mirror device 1 according to any one of claims 1 to 5, and at least one mirror device SP1; SP2 ) Is disposed so as to be movable in a direction perpendicular to the plane extension of the mirror layer 3 with respect to each other mirror device SP1; SP2, so that the first mirror device SP1 and the second mirror device SP2 ) The distance d between is changeable, interferometer device (Int). 7. The mirror device according to claim 6, wherein the first mirror device (SP1) and the second mirror device (SP2) each include a unique substrate (2), or one of the mirror devices (SP1, SP2) is another mirror device. An interferometer device (Int) for forming a substrate for (SP2; SP1). The interferometer device (Int) according to claim 6, wherein the first mirror device (SP1) and the second mirror device (SP2) simultaneously include a common substrate (2). The method according to claim 8, wherein the second mirror device (SP2) extends past the first mirror device (SP1) in a lateral direction, and the first mirror device (SP1) and the second mirror device (SP2) are their An interferometer device (Int), which is disposed on the common substrate (2) by each fixing part (B1; B2). The method of claim 8, wherein the second mirror device (SP2) has a size smaller than or equal to the first mirror device (SP1) in the lateral direction, the second mirror device (SP2) is fixed to the fixing portion (B2) The interferometer device (Int) is disposed directly on the first mirror device (SP1) by the first mirror device (SP1) itself to form the substrate (2) of the second mirror device (SP2). A method of manufacturing a mirror device (1) for an interferometer device (Int),
-Providing a substrate 2 (S1);
-Providing a sacrificial layer 4 on the substrate 2 (S2);
-Trench structure (5) that extends completely through the sacrificial layer (4) to the substrate (2) and shows a curve (K) with a radius that changes azimuthally in plan view of the top surface of the sacrificial layer (4) Forming in the sacrificial layer 4 (S3);
-Introducing an etch stop material (6) or mirror material (7) into said trench structure (5) (S4), and
The sacrificial material such that the mirror material 7 extends laterally between the trench structures 5 on the planar upper face 4a of the sacrificial layer 4 and at least partially over the trench structures 5. A method of manufacturing a mirror device (1) comprising the step (S5) of providing the mirror material (7) to the planar upper surface (4a) of the layer (4). 12. The trench structure (5) according to claim 11, characterized in that the trench structure (5) is a sine wave shape, a gear shape, a sawtooth shape or a closed curve (polygonal line) in plan view of the top surface of the sacrificial layer (4). A method for manufacturing the mirror device 1, which is formed to represent K). 13. The method according to claim 11 or 12, wherein at least one etching hole (L) is formed in the mirror layer (3), and the sacrificial layer (4) between the substrate (2) and the mirror layer (3) is etched. A method of manufacturing a mirror device (1), which is at least partially removed by a method. As a method of manufacturing an interferometer device (Int), a step (S6) of providing a first mirror device (SP1) and a second mirror device (SP2) is performed, and the first mirror device (SP1) is provided in claims 11 to 13 It is prepared according to the method according to any one of claims, and subsequently
-Providing a second sacrificial layer 4b on the first mirror device SP1 (S7);
-A curve K having a radius that extends completely through the second sacrificial layer 4b to the first mirror device SP1 and changes in azimuth in a plan view of the upper surface of the second sacrificial layer 4b Forming a second trench structure (5b) in the second sacrificial layer (4b) (S8);
-Introducing an etch stop material (6) or a mirror material (7) into said second trench structure (5b) (S9), and
-A mirror material (7) is laterally between the second trench structures (5b) on the planar upper surface (4c) of the second sacrificial layer (4b) and at least partially over the second trench structures (5) Method of manufacturing an interferometer device (Int) characterized in that the step (S10) of providing a mirror material (7) to the planar upper surface (4c) of the second sacrificial layer (4b), so as to extend.

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