KR20200028721A - Light emitting diode and fabricating method thereof - Google Patents

Abstract

Disclosed are a light emitting diode and a manufacturing method thereof. According to an embodiment of the present invention, the light emitting diode comprises: a first conductive substrate; a seed layer coated on the first conductive substrate; a second conductive oxide layer including a plurality of second conductive nano-roads grown from the seed layer; a transparent electrode layer including a plurality of metal nano-wires formed on the second conductive oxide layer; and an electrode formed on the first conductive substrate. Morphology of the plurality of second conductive nano-roads can be controlled based on a catalyst.

Description

Light emitting diode and manufacturing method thereof LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF

The present invention relates to a light emitting diode and a method for manufacturing the same, and more particularly, to a light emitting diode that emits red light based on the formation of a PN heterojunction between a substrate and an oxide layer and a method for manufacturing the same.

A light emitting diode is an inorganic semiconductor device that emits light generated through recombination of electrons and holes.

Recently, light emitting diodes have been used in various fields, such as light emitting devices, light emitting diodes (LED), LCD back light, mobile (Mobile), lighting, optical communication.

Light-emitting diodes have the advantages of long life, low power consumption, and fast response, and due to these advantages, they are rapidly replacing conventional light sources.

There are various methods for implementing light using a light emitting diode, among which a blue light emitting diode that emits blue light, a red light emitting diode that emits red light, and a green light emitting diode that emits green light can be implemented.

Among them, a red light emitting diode based on AlGaAs may be formed of a homogeneous junction of n-type and p-type AlGaAs semiconductors grown on a GaAs substrate, and electrodes having ohmic characteristics may be formed on the semiconductors, respectively.

The red light emitting diode may form an electric field through an electrode formed on the surface, and check light emission on the p-type semiconductor surface.

However, AlGaAs is capable of crystal growth using chemical vapor deposition and vapor phase epitaxy, and requires expensive equipment and precursors for high-quality thin film growth.

In addition, a high growth temperature (over 500 ° C) is a reason to lower the usable range of substances with temperature issues such as organic matter.

Therefore, there is a need to propose a light emitting diode and a method of manufacturing the same that can be formed even at a low growth temperature and can freely control the diameter and length of the nanorod.

Korean Patent Publication No. 10-2018-0007625, "Light emitting diode and manufacturing method thereof" Korean Registered Patent No. 10-1724692, "Method for manufacturing titanium dioxide nanorods using thermal hydrolysis process and photoelectrode comprising titanium dioxide nanorods prepared therefrom" Korean Registered Patent No. 10-1439064, "Light emitting diode having heterojunction structure and method for manufacturing the same"

The present invention can be aimed at realizing a light emitting diode that emits red light based on a heterojunction of a p-type silicon substrate and an indium hydroxide nanorod.

The present invention can be aimed at providing a light-emitting diode and a method of manufacturing the nanorods grown at a low growth temperature of 100 ° C. or less, thereby broadening the range of use of organic materials and temperature-sensitive materials.

The present invention may be aimed at increasing the utilization of light emitting diodes by performing growth on various flexible substrates as well as silicon substrates.

The present invention may be intended to grow a nanorod having a diameter of a suitable length even at a low growth temperature by adjusting the length and diameter of the nanorod using a catalyst.

According to an embodiment of the present invention, the light emitting diode includes a first conductive type substrate, a seed layer formed on the first conductive type substrate, and a second conductive layer including a plurality of second conductive type nanorods growing from the seed layer. A transparent electrode layer including a plurality of metal nanowires formed on the type oxide layer and the second conductivity type oxide layer, wherein the plurality of second conductivity type nanorods are based on a catalyst and are morphological (Morphology). Can be controlled.

According to an embodiment of the present invention, the plurality of second conductivity type nanorods may be formed to have a diameter of 150 nm to 300 nm and a length of 900 nm to 1000 nm based on the catalyst.

According to an embodiment of the present invention, the plurality of second conductivity-type nanorods may grow in a vertical direction from the seed layer and exhibit a monoclinic crystal structure.

According to an embodiment of the present invention, the catalyst may include at least one of urea or sodium hydroxide (NaOH).

According to an embodiment of the present invention, the second conductivity type nanorods may be grown in a polycrystalline structure from the seed layer at a temperature of 60 ° C to 90 ° C using the catalyst.

According to one embodiment of the present invention, the first conductivity type substrate is doped with p-type impurities, the second conductivity type nanorods and the second conductivity type oxide layer are doped with n-type impurities, and the first conductivity type The substrate may implement heterojunction with the second conductivity type oxide layer.

According to an embodiment of the present invention, the plurality of metal nanowires operate as electrodes of the plurality of nanorods, and the plurality of nanorods may output red light when electric signals are applied to the transparent electrode layer and the electrode. have.

According to an embodiment of the present invention, a method of manufacturing a light emitting diode comprises spin coating a seed layer on a first conductivity type substrate to form a second conductivity type oxide layer including a plurality of second conductivity type nanorods from the seed layer. And forming a transparent electrode layer including a plurality of metal nanowires on the second conductivity type oxide layer, and forming an electrode on the first conductivity type substrate, and the second conductivity type oxide. The step of forming a layer may include adjusting the length and diameter of the plurality of second conductivity type nanorods using a catalyst.

The present invention can implement a light emitting diode that emits red light based on a heterojunction of a p-type silicon substrate and an indium hydroxide nanorod.

The present invention can provide a light-emitting diode and a method of manufacturing the nanorods grown at a low growth temperature of 100 ° C. or less, thereby widening the range of use of organic materials and temperature-sensitive materials.

The present invention can increase the utilization of light emitting diodes by performing growth on various flexible substrates as well as silicon substrates.

According to the present invention, a nanorod having an appropriate length diameter can be grown even at a low growth temperature by controlling the length and diameter of the nanorod using a catalyst.

1A and 1B are diagrams illustrating a structure of a light emitting diode according to an embodiment of the present invention.
2A to 2D are views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
3A to 3C are diagrams illustrating a process of forming a nanorod according to an embodiment of the present invention.
4A to 5B are diagrams illustrating a microscope image related to nanorod formation according to an embodiment of the present invention.
6A and 6B are diagrams illustrating microscopic images related to metal nanowire formation according to an embodiment of the present invention.
7A and 7B are views illustrating a light emitting operation of a light emitting diode according to an embodiment of the present invention.
8 is a view for explaining an embodiment in which the morphology of the nanorods is controlled based on the catalyst according to an embodiment of the present invention.

Hereinafter, various embodiments of the present document will be described with reference to the accompanying drawings.

It should be understood that the examples and terms used therein are not intended to limit the technology described in this document to specific embodiments, but include various modifications, equivalents, and / or substitutes of the examples.

In the following description of various embodiments, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the invention, the detailed description will be omitted.

In addition, terms to be described later are terms defined in consideration of functions in various embodiments, which may vary according to a user's or operator's intention or practice. Therefore, the definition should be made based on the contents throughout this specification.

In connection with the description of the drawings, similar reference numerals may be used for similar components.

Singular expressions may include plural expressions unless the context clearly indicates otherwise.

In this document, expressions such as “A or B” or “at least one of A and / or B” may include all possible combinations of items listed together.

Expressions such as "first," "second," "first," or "second," can modify the components, regardless of order or importance, to distinguish one component from another component It is used but does not limit the components.

When it is mentioned that one (eg, first) component is “connected (functionally or communicatively)” to another (eg, second) component or is “connected,” one component is another component It can be directly connected to, or through other components (eg, third component).

In this specification, "configured to (or configured) (configured to)", depending on the situation, for example, in hardware or software, "suitable for," "with the ability to", "has been modified to" It can be used interchangeably with "made to do," "can do," or "designed to do."

In some situations, the expression "a device configured to" may mean that the device "can" with other devices or parts.

For example, the phrase “processors configured (or set) to perform A, B, and C” means by executing a dedicated processor (eg, an embedded processor) to perform the operation, or one or more software programs stored in the memory device. , It may mean a general-purpose processor (for example, a CPU or an application processor) capable of performing the corresponding operations.

In addition, the term 'or' refers to the inclusive 'inclusive or' rather than the exclusive 'exclusive or'.

That is, unless stated otherwise or unclear from the context, the expression 'x uses a or b' means any of the natural inclusive permutations.

The terms '.. part', '.. group', and the like used hereinafter refer to a unit that processes at least one function or operation, which may be implemented by hardware or software, or a combination of hardware and software.

Reference herein to a layer formed “on” a substrate or other layer refers to a layer formed directly above the substrate or other layer, or formed on an intermediate layer or intermediate layers formed on the substrate or other layer. May refer to a layer

In addition, for those skilled in the art, a structure or shape disposed " adjacent to another shape " may have a portion that overlaps or is disposed below the adjacent shape.

In this specification, "below", "above", "upper", "lower", "horizontal" or "vertical" Relative terms such as one component, layer or region, as shown on the figures

These can be used to describe relationships with other components, layers or regions. It should be understood that these terms encompass not only the directions indicated in the figures, but also other directions of the device.

In the following, embodiments of the present invention will be described with reference to cross-sectional views schematically showing ideal embodiments of the present invention.

In these drawings, for example, the size and shape of the members may be exaggerated for convenience and clarity of description, and in actual implementation, deformations of the illustrated shape can be expected.

Accordingly, embodiments of the present invention should not be construed as limited to the specific shapes of the regions shown herein.

Also, reference numerals of members in the drawings may refer to the same members throughout the drawings.

1A and 1B are diagrams illustrating a structure of a light emitting diode according to an embodiment of the present invention.

1A illustrates a three-dimensional view of a light emitting diode according to an embodiment of the present invention, and FIG. 1B illustrates a cross-sectional view of a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1A, the light emitting diode 100 according to an embodiment of the present invention includes a first conductivity type substrate 110, a seed layer 120, a second conductivity type oxide layer, and a transparent electrode layer 140. You can.

In one example, the first conductivity-type substrate 110 may include a p-type silicon substrate.

That is, the first conductive type substrate 110 is a silicon substrate doped with p-type impurities, and may also represent a substrate doped with a polysilicon (p-Si) material.

Further, the first conductivity type substrate 110 may be a substrate on which surface treatment for changing hydrophilicity has been previously performed.

Here, the surface treatment for changing the hydrophilicity is piranha treatment. In order to improve the problem of lowering the flow of fluid when the substrate surface is hydrophobic, any one of chemical treatment, ultraviolet irradiation, or oxygen plasma treatment is performed to perform the first treatment. It may include a process of changing the surface of the conductive substrate 110 from hydrophobic to hydrophilic.

According to an embodiment of the present invention, the first conductive type substrate 110 is a substrate that is an insulating substrate itself such as ceramic or polyimide, a semiconductive substrate such as a silicon wafer, or even a conductive substrate such as a lead frame. It can be.

In addition, an insulating film such as silicon oxide, silicon nitride or aluminum oxide, a metal conductive film, or a semiconductor film may be formed on the surface of the first conductive type substrate 110, and the present invention is not limited thereto.

According to an embodiment of the present invention, the seed layer 120 may be formed on the first conductive type substrate 110.

That is, the seed layer 120 may be coated on the first conductive type substrate 110 through a spin coating method, an electron beam deposition method, or an atomic deposition followed by a heat treatment process.

Here, the seed layer 120 may be indium hydroxide (In (OH) ₃ ) spin-coated, heat-treated after deposition, or coated on the first conductive type substrate 110 using an electron beam deposition method.

According to an embodiment of the present invention, the second conductivity type oxide layer 130 may include a plurality of second conductivity type nanorods growing from the seed layer 120.

For example, the second conductivity type oxide layer 130 is a layer formed when an n-type impurity is doped, and may include a material grown from the seed layer 120.

According to one embodiment of the present invention, the second conductivity type oxide layer 130 may include a plurality of second conductivity type nanorods grown using a hydrothermal synthesis method.

For example, the second conductivity type nanorod is grown from indium hydroxide (In (OH) ₃ ) of the seed layer 120 and may include indium hydroxide (In (OH) ₃ ). That is, the second conductivity type nanorod may also be referred to as an indium hydroxide nanorod.

Hydrothermal synthesis is a technology widely used in the production of various types of materials due to its simple equipment structure, process process, low production cost, and environment-friendly advantages.

For example, nanorods grown using hydrothermal synthesis can be controlled by controlling the concentration of the precursor, growth temperature, and growth time as variables for controlling the properties.

In addition, the growth temperature is an important thermodynamic variable because it controls the mechanism of the chemical reaction, and the shape, crystallinity and optical properties of the nanorods in which the growth temperature is grown by hydrothermal synthesis can be controlled.

According to an embodiment of the present invention, in the second conductive type nanorod, the first conductive type substrate 110 on which the seed layer 120 is coated is vertically disposed in an indium chloride (InCl ₃ ) aqueous solution and through a low temperature hydrothermal synthesis method. It may be produced by growing from the seed layer 120.

For example, when the second conductivity type nanorod is grown, the angle difference between the bottom surface of the container containing the indium chloride (InCl ₃ ) aqueous solution and the first conductivity type substrate 110 is maintained at 10 ° or less. For example, the container may be a beaker used in the experiment.

In the above description, an operation of maintaining an angle difference between the bottom surface and the first conductivity type substrate 110 to 10 ° or less is illustrated.

However, it is not limited to the above-described example, and the crystallinity of the second conductivity type nanorod may be adjusted according to an angle difference formed by the bottom surface of the container and the first conductivity type substrate 110.

For example, the second conductivity type nanorods may grow in a vertical direction from the seed layer 120 and may exhibit a monoclinic crystal structure.

According to an embodiment of the present invention, the transparent electrode layer 140 may include a plurality of nanowires.

In one example, the transparent electrode layer 140 may be formed of a transparent conductive metal oxide thin film or conductive nanowires.

For example, the transparent conductive metal oxide thin film includes ZnO (Zinc Oxide), GZO (Ga-doped ZnO), ITO (Indium Tin Oxide), IGO (Indium Gallium Oxide), IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc) Oxide) and ZTO (Zinc Tin Oxide).

For example, the transparent electrode layer may be formed using a highly conductive transparent electrode containing graphene.

In addition, the conductive nanowire is a conductive nanowire laminate, nickel (Ni), gold (Au), platinum (Pt) and their alloys, carbon (C), silicon (Si) and germanium (Ge), silicon oxide ( SiO2), titanium oxide (TiO2), tungsten oxide (WOX), gallium nitride (GaN), indium phosphate (InP), copper (Cu) and silicon carbide (SiC).

In the above description, the nano rod and the nano wire are related to a morphology in which a conductive material is formed, and the above-described nano rod may be formed of a nano cube.

Hereinafter, a cross section of the light emitting diode 100 will be described with reference to FIG. 1B.

Referring to FIG. 1B, a light emitting diode 100 according to an embodiment of the present invention includes a first conductivity type substrate 110, a seed layer 120, a second conductivity type oxide layer, a transparent electrode layer 140 and an electrode ( 150).

According to an embodiment of the present invention, a seed layer 120 is formed on the first conductive type substrate 110 using a spin coating method, and a plurality of second conductive types are formed from the seed layer 120 using hydrothermal synthesis. The nanorods are grown, and a second conductivity type oxide layer 130 including a plurality of second conductivity type nanorods is formed.

In addition, a transparent electrode layer 140 including a plurality of metal nanowires is formed on the second conductivity type oxide layer.

In addition, the electrode 150 is formed on the first conductive type substrate 110.

According to an embodiment of the present invention, a plurality of second conductivity-type nanorods may be controlled in a morphology based on a catalyst.

An embodiment in which the diameter and length of the second conductive type nanorod are adjusted based on the catalyst is further described with reference to FIGS. 3A to 5B.

For example, when the second conductivity type nanorod is grown without a catalyst, the diameter may be about 100 nm to 150 nm, and the length may be about 300 nm to 400 nm.

The second conductive nanorod according to an embodiment of the present invention may be formed to a diameter of about 150nm to 300nm, and a length of 900nm to 1000nm based on a catalyst.

That is, the second conductivity type nanorods may have a larger diameter and a longer length using a catalyst.

For example, the morphology of the second conductivity type nanorod may be related to the diameter and length.

According to an embodiment of the present invention, the second conductive nanorod may be grown in a polycrystalline structure from the seed layer 120 at a temperature of 60 ° C to 90 ° C using a catalyst.

For example, the first conductivity type substrate and the second conductivity type oxide layer may form a heterojunction.

According to an embodiment of the present invention, a plurality of metal nanowires operate as electrodes of a plurality of nanorods, and a plurality of nanorods can output red light when an electrical signal is applied to the transparent electrode layer and the electrode 150. There is also.

The configuration for outputting the red light will be further described with reference to FIGS. 7A and 7B.

2A to 2D are views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 2A, a first conductivity type impurity is doped onto a substrate, and a first conductivity type substrate 201 is generated by surface-treating a substrate doped with the first conductivity type impurity for hydrophilicity change.

Here, in order to improve the problem of lowering the flow of the fluid when the surface of the substrate is hydrophobic, the surface treatment for changing the hydrophilicity is performed by performing any of chemical treatment, ultraviolet irradiation, or oxygen plasma treatment to form the first conductive substrate ( It may include a process of changing the surface of 110) from hydrophobic to hydrophilic.

Referring to FIG. 2B, a solution of indium hydroxide (In (OH) ₃ ) is dropped on the first conductive type substrate 201 and rotated at a high speed to coat a thin film to form a seed layer 202.

Referring to FIG. 2C, a plurality of second conductivity type nanorods are grown on the seed layer 202 using hydrothermal synthesis to form a second conductivity type oxide layer 203.

Here, the first conductive type substrate 201 coated with the seed layer 202 is vertically disposed in an indium chloride (InCl ₃ ) aqueous solution, and a plurality of second conductive type nanorods are seeded from the seed layer 202 by hydrothermal synthesis. Is grown.

Here, the second conductivity type nanorod may be an indium hydroxide (In (OH) ₃ ) nanorod.

For example, the catalyst may be used in combination with an aqueous solution contained in the first conductive substrate 110.

As an example, the length and diameter of the second conductivity type nanorod may be adjusted based on the catalyst.

That is, as the second conductivity type oxide layer including the second conductivity type nanorod is formed on the first conductivity type substrate 201, PN heterojunction may be formed.

Referring to FIG. 2D, a transparent electrode layer 204 including a plurality of nanowires is formed, and an electrode 205 may be formed on the first conductive type substrate 201.

For example, a plurality of nanowires may be formed using a metal material.

That is, the plurality of nanowires is nickel (Ni), gold (Au), platinum (Pt) and their alloys, carbon (C), silicon (Si) and germanium (Ge), silicon oxide (SiO2), titanium oxide ( TiO2), tungsten oxide (WOX), gallium nitride (GaN), indium phosphate (InP), copper (Cu), and silicon carbide (SiC).

For example, the electrode 205 may be a p-type silicon electrode formed using nickel (Ni) or gold (Au).

According to an embodiment of the present invention, after the electrode 205 is partially etched through the seed layer 202, the second conductive type oxide layer 203, and the transparent electrode layer 204 through a selective etching process, the first conductive It can be formed on a molded substrate.

According to an embodiment of the present invention, the light emitting diode 200 may emit red light through the formation of an electric field based on electricity injected into the transparent electrode layer 204 and the electrode 205.

3A to 3C are diagrams illustrating a process of forming a nanorod according to an embodiment of the present invention.

3A is a view for explaining a characteristic of a nanorod growing according to a temperature change in a seed layer coated without a catalyst after coating the seed layer on the first conductive type substrate according to an embodiment of the present invention.

Referring to FIG. 3A, when the temperature of the aqueous solution containing the seed layer is changed by about 50 ° C. to 60 ° C., materials 301 including rods and cubes are formed from the seed 300 of the seed layer. , When the temperature of the aqueous solution is increased to 70 ℃, it is changed into a cube shape.

3B illustrates a feature of growing a nanorod according to a temperature change in a coated seed layer using a catalyst in a predetermined amount or more after coating the seed layer on the first conductive type substrate according to an embodiment of the present invention It is a drawing for.

Referring to FIG. 3B, when the temperature of the aqueous solution containing the seed layer is about 50 ° C. or less, materials 311 including rods are formed from the seed 301 of the seed layer, and the temperature of the aqueous solution is increased to 60 ° C. , Hexagonal shape rods and cube-shaped features will be described.

That is, when a certain amount of a catalyst is used in the seed layer, it is difficult to control the growth shape and characteristics of the nanorods.

3C illustrates a feature of growing a nanorod according to a temperature change in a coated seed layer using a certain amount of catalyst after coating the seed layer on the first conductive type substrate according to an embodiment of the present invention It is a drawing for. Here, a certain amount of the catalyst may be about 0.333M urea.

Referring to FIG. 3C, when the temperature of the aqueous solution containing the seed layer is about 50 ° C. or less, materials containing rods are formed from the seed 320 of the seed layer and the temperature of the aqueous solution is increased to 60 ° C. , Describes the characteristics of the constant shape of the nanorod is formed.

For example, urea as a catalyst can alter the molecular structure of the seed layer to promote the growth of nanorods from the seed layer.

That is, the crystallinity of the nanorods according to an embodiment of the present invention may be determined based on temperature control, pressure control and a catalyst.

According to an embodiment of the present invention, the light emitting diode may be controlled in temperature, time, angle between an aqueous solution and a substrate, surface treatment, amount of catalyst, morphology, diameter and height for growing a nanorod.

The present invention can increase the utilization of light emitting diodes by performing growth on various flexible substrates as well as silicon substrates.

In addition, the present invention can grow a nanorod having a diameter of an appropriate length even at a low growth temperature by controlling the morphology of the nanorod using a catalyst.

4A to 5B are diagrams illustrating a microscope image related to nanorod formation according to an embodiment of the present invention.

Figure 4a is a SEM image showing the characteristics of the nanorods grow with temperature changes in the seed layer coated without a catalyst, after coating the seed layer on the first conductive type substrate according to an embodiment of the invention.

According to an embodiment of the present invention, when the seed layer 400 is immersed in an aqueous solution and the temperature of the aqueous solution is increased, the second conductivity type oxide layer 401 including the second conductivity type nanorods on the seed layer 400 is Can be formed.

FIG. 4B is a SEM image showing the characteristics of nanorods growing according to a temperature change in a seed layer coated with a catalyst after coating the seed layer on the first conductive type substrate according to an embodiment of the present invention.

According to an embodiment of the present invention, when the seed layer 410 is immersed in an aqueous solution and the temperature of the aqueous solution is increased, the second conductivity type oxide layer 411 including the second conductivity type nanorods on the seed layer 410 is Can be formed.

When the SEM image of the second conductivity type oxide layer 401 is compared with the SEM image of the second conductivity type oxide layer 411, the diameter and length of the nanorods are increased.

5A is an SEM image of a plurality of seeds forming a seed layer according to an embodiment of the present invention.

5B is an SEM image of a plurality of nanorods grown from a seed layer according to one embodiment of the present invention.

6A and 6B are diagrams illustrating microscopic images related to metal nanowire formation according to an embodiment of the present invention.

Referring to FIG. 6A, an SEM image of fragments of a metal material for forming a nanowire is illustrated.

Referring to Figure 6b, illustrates a nanowire formed from a metallic material.

7A and 7B are views illustrating a light emitting operation of a light emitting diode according to an embodiment of the present invention.

7A illustrates an experiment of a light emitting diode according to an embodiment of the present invention.

In one example, the light emitting diode includes a second conductive type oxide layer including a plurality of nanorods on a first conductive type substrate, and a transparent electrode layer 701 formed from a metal material on the second conductive type oxide layer. In this case, an electrode 702 is also formed on the first conductive type substrate using a metal material.

An electric field is formed by injecting electricity into the transparent electrode layer 701 and the electrode 702.

Referring to FIG. 7B, based on the electric field formed by the transparent electrode layer 701 and the electrode 702, the light emitting diode may emit red light as in the regions 701, 702, and 703.

8 is a view for explaining an embodiment in which the morphology of the nanorods is controlled based on the catalyst according to an embodiment of the present invention.

More specifically, FIG. 8 illustrates a change in the morphology of the second conductivity type nanorod of the present invention according to the change in the proportion of urea.

Referring to FIG. 8, the horizontal axis of the graph may represent the diameter of the second conductivity type nanorod, and the vertical axis may indicate the length of the second conductivity type nanorod.

The change in the ratio of urea is illustrated in four steps, and is not limited thereto, and the morphology of the second conductivity type nanorod may be controlled according to the similar ratio.

The first step 801 exemplifies the absence of urea, and in the first step 801, the morphology of the second conductive type nanorod of the present invention may be controlled with a cube structure of 0 to 10 μm or less.

The second step 802 exemplifies a case where the ratio of urea corresponds to about 0.1M, and in the second step 802, the morphology of the second conductive type nanorod of the present invention is 0-10 μm or less cube It can be controlled with a nanorod having a structure, a diameter of 70 nm or less, and a length of 300 nm.

The third step 803 illustrates the case where the ratio of urea corresponds to about 0.333M, and in the third step 803, the morphology of the second conductivity type nanorods of the present invention in all parts of the surface of the grown substrate. It can be controlled with nanorods with a diameter of 100 nm and a length of 1 μm.

The fourth step 804 exemplifies the case where the proportion of urea corresponds to about 0.5M, and in the fourth step 804, the morphology of the second conductive nanorods of the present invention in all parts of the surface of the grown substrate. It can be controlled with nanorods with a diameter of 200 nm and a length of 1 μm. In addition, a flower structure having a size of 1 μm may be further included.

Therefore, the present invention can grow a nanorod having a diameter of an appropriate length even at a low growth temperature by controlling the ratio of the catalyst to control the morphology.

In the above description, the first step 801 to the fourth step 804 are only steps for explaining the change in the ratio of urea, and each step is not sequentially executed.

Methods according to embodiments described in the claims or specification of the present invention may be implemented in the form of hardware, software, or a combination of hardware and software.

In the above-described specific embodiments, components included in the present invention are expressed in singular or plural according to the specific embodiments presented.

However, the singular or plural expressions are appropriately selected for the situation presented for convenience of explanation, and the above-described embodiments are not limited to the singular or plural components, and even the components expressed in plural are composed of the singular or , Even a component represented by a singular number may be composed of a plurality.

On the other hand, in the description of the invention, specific embodiments have been described, but various modifications are possible without departing from the scope of the technical spirit of the various embodiments.

Therefore, the scope of the present invention is not limited to the described embodiments and should not be determined, but may be determined not only by the claims described below, but also by the claims and equivalents.

100: light-emitting diode 110: first conductive type substrate
120: seed layer 130: second conductivity type oxide layer
140: transparent electrode layer 150: electrode

Claims (8)

A first conductive type substrate;
A seed layer formed on the first conductive type substrate;
A second conductivity type oxide layer including a plurality of second conductivity type nanorods growing from the seed layer; And
A transparent electrode layer including a plurality of metal nanowires formed on the second conductivity type oxide layer,
The plurality of second conductivity-type nanorods are controlled by a morphology based on a catalyst.
Light Emitting Diode.
According to claim 1,
The plurality of second conductivity type nanorods are formed with a diameter of 150nm to 300nm and a length of 900nm to 1000nm based on the catalyst.
Light Emitting Diode.
According to claim 2,
The plurality of second conductivity-type nanorods grow in a vertical direction from the seed layer and exhibit a monoclinic crystal structure.
Light Emitting Diode.
According to claim 1,
The catalyst comprises at least one of urea or sodium hydroxide (NaOH)
Light Emitting Diode.
According to claim 1,
The second conductivity type nanorods are grown in a polycrystalline structure from the seed layer at a temperature of 60 ° C to 90 ° C using the catalyst.
Light Emitting Diode.
According to claim 1,
The first conductivity-type substrate is doped with p-type impurities, and the second conductivity-type nanorod and the second conductivity-type oxide layer are doped with n-type impurities,
The first conductivity-type substrate implements heterojunction with the second conductivity-type oxide layer.
Light Emitting Diode.
The method of claim 6,
The plurality of metal nanowires operate as electrodes of the plurality of nanorods,
The plurality of nanorods output red light when an electrical signal is applied to the transparent electrode layer and the electrode.
Light Emitting Diode.
Spin coating a seed layer on a first conductivity type substrate to form a second conductivity type oxide layer including a plurality of second conductivity type nanorods from the seed layer; And
And forming a transparent electrode layer including a plurality of metal nanowires on the second conductivity type oxide layer,
The forming of the second conductivity type oxide layer may include:
And controlling the morphology of the plurality of second conductivity type nanorods using a catalyst.
Method of manufacturing a light emitting diode.

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