KR20200026762A - Self assembly device for semiconductor light emitting device - Google Patents

Abstract

The present invention provides a self-assembly device of a semiconductor light emitting device, which comprises: an assembly chamber with a space for receiving a fluid; a magnetic field forming unit having a plurality of magnets applying magnetic force to the semiconductor light emitting devices dispersed in the fluid and a horizontal movement unit for changing the positions of the magnets so that the semiconductor light emitting devices move in the fluid; a substrate chuck including a substrate support unit configured to support a substrate having an assembly electrode, a vertical movement unit lowering the substrate so that one surface of the substrate comes into contact with the fluid while supporting the substrate, and an electrode connection unit applying power to the assembly electrode to generate an electric field so that the semiconductor light emitting devices are seated at predetermined positions of the substrate in the process of moving by the position change of the magnets; and a control unit controlling the movements of the magnetic field forming unit and the substrate chuck. The control unit controls the depth at which the substrate is immersed in the fluid based on the degree of bending of the substrate.

Description

Self-assembling device for semiconductor light emitting device {SELF ASSEMBLY DEVICE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present invention relates to a method for manufacturing a display device, and more particularly, to a self-assembly device of a micro LED.

Recently, liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, and micro LED displays are competing to realize large-area displays in the display technology field.

However, there are problems such as inconsistent reaction time and low efficiency of light generated by the backlight in the case of LCD, and short lifespan in OLED, and poor yield as well as low efficiency in OLED.

In contrast, the use of a semiconductor light emitting element (micro LED (uLED)) having a diameter or cross-sectional area of less than 100 microns in the display can provide very high efficiency because the display does not absorb light using a polarizing plate or the like. However, large displays require millions of semiconductor light emitting devices, which makes it difficult to transfer the devices compared to other technologies.

The technologies currently being developed for the transfer process include pick & place, laser lift-off (LLO) or self-assembly. Among these, the self-assembly method is a method in which the semiconductor light emitting device locates itself in the fluid, and is the most advantageous method for implementing a large display device.

Recently, the US Patent No. 9,825,202 has proposed a micro LED structure suitable for self-assembly, but the research on the technology for manufacturing a display through the self-assembly of the micro LED has been insufficient. Thus, the present invention proposes a new type of manufacturing apparatus that can be self-assembled micro LED.

One object of the present invention is to provide a novel manufacturing process with high reliability in a large screen display using a micro-sized semiconductor light emitting device.

It is still another object of the present invention to provide an apparatus for correcting warpage of a substrate due to gravity when the semiconductor light emitting device is self-assembled into a temporary substrate or a wiring substrate.

In addition, another object of the present invention is to increase the self-assembly yield by removing the bubbles generated when the substrate and the fluid contact.

In addition, another object of the present invention when the substrate is released from the fluid after the end of self-assembly,

In order to achieve the above object, the present invention provides an assembly chamber having a space for receiving a fluid, a plurality of magnets for applying a magnetic force to the semiconductor light emitting elements dispersed in the fluid and the semiconductor light emitting device is moved in the fluid A magnetic field forming portion having a horizontal moving portion for changing the positions of the magnets, a substrate supporting portion for supporting a substrate having an assembly electrode, and lowering the substrate so that one surface of the substrate is in contact with a fluid while supporting the substrate A substrate chuck having a vertical moving part and an electrode connecting part for applying electric power to the assembly electrode to generate a electric field so as to be seated at a predetermined position of the substrate in the process of moving the semiconductor light emitting devices by the position change of the magnets; Controlling the movement of the magnetic field forming unit and the substrate chuck Including the fisherman, and the control unit on the basis of the degree of warpage of the substrate, and provides a self-assembling device of the semiconductor light emitting device wherein the substrate is controlling the depth of immersion in the fluid.

In an embodiment, the apparatus may further include a displacement sensor configured to sense a degree of warpage of the substrate, and the controller may control a depth at which the substrate is immersed in the fluid based on a sensing result of the displacement sensor.

In an embodiment, the control unit may lower the substrate so that the assembly surface of the substrate is in contact with the fluid and then further lower the substrate while the assembly surface of the substrate is in contact with the fluid.

In one embodiment, the substrate chuck has a rotating portion for rotating the substrate support, the control unit when the assembly surface of the substrate when the lowering the substrate in contact with the fluid, the assembly surface of the substrate is the fluid The vertical moving part and the rotating part may be driven to be in contact with the contact part at an angle.

The control unit lowers the substrate by controlling the vertical moving unit until one end of the assembly surface comes into contact with the fluid while the assembly surface of the substrate is disposed obliquely with the surface of the fluid. After the one end of the assembly surface is in contact with the fluid, the assembly may be controlled to sequentially contact the fluid along one direction.

In one embodiment, the control unit may lower the substrate by controlling the vertical moving unit after the entire assembly surface is in contact with the fluid.

In one embodiment, the control unit further raises the substrate so that the assembly surface of the substrate is separated from the fluid after raising the substrate to a predetermined height after the semiconductor light emitting devices are seated at the predetermined position. You can.

In one embodiment, the control unit may drive the vertical moving unit and the rotating unit so that the assembly surface of the substrate is obliquely separated from the fluid after raising the substrate to a predetermined height.

In one embodiment, the controller may control the rotating unit so that the assembly surface is sequentially separated from the fluid in one direction after raising the substrate to a predetermined height.

In one embodiment, the control unit may control the rotational speed of the rotating unit to vary with time in controlling the rotating unit so that the assembly surface is sequentially separated from the fluid in one direction.

According to the present invention having the above-described configuration, in a display device in which individual pixels are formed of micro light emitting diodes, a large amount of semiconductor light emitting elements can be assembled at one time.

As described above, according to the present invention, a large amount of semiconductor light emitting devices can be pixelated on a small wafer and then transferred to a large area substrate. Through this, it is possible to manufacture a large-area display device at low cost.

In addition, according to the present invention, by simultaneously transferring a plurality of semiconductor light emitting device in place using a magnetic field and an electric field in a solution, it is possible to implement a low cost, high efficiency, high speed transfer regardless of the size, number of parts, transfer area .

In addition, since the assembly by the electric field can be selectively assembled through the selective electrical application without any additional device or process. In addition, by placing the assembly substrate on the upper side of the chamber, it is easy to load and unload the substrate, facilitate loading and unloading, and non-specific coupling of the semiconductor light emitting device can be prevented.

In addition, according to the present invention, it is possible to correct the warpage phenomenon of the substrate without having to arrange a separate structure on the upper and lower sides of the substrate. Through this, the present invention allows to achieve a high self-assembly yield even when the area of the assembly substrate is large.

In addition, according to the present invention, since bubbles generated between the substrate and the fluid can be minimized when the substrate and the fluid are in contact, the self-assembly yield can be increased.

In addition, according to the present invention, it is possible to prevent the pre-assembled semiconductor light emitting device from being separated from the substrate in the process of leaving the substrate from the fluid after the self-assembly is completed.

1 is a conceptual diagram illustrating an embodiment of a display device using the semiconductor light emitting device of the present invention.
FIG. 2 is a partially enlarged view of a portion A of the display device of FIG. 1.
3 is an enlarged view of the semiconductor light emitting device of FIG. 2.
4 is an enlarged view illustrating another embodiment of the semiconductor light emitting device of FIG. 2.
5A to 5E are conceptual views for explaining a new process of manufacturing the semiconductor light emitting device described above.
6 is a conceptual diagram illustrating an example of a self-assembly apparatus of a semiconductor light emitting device according to the present invention.
7 is a block diagram of the self-assembly of FIG. 6.
8A to 8E are conceptual views illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly of FIG. 6.
9 is a conceptual view illustrating the semiconductor light emitting device of FIGS. 8A to 8E.
10 is a flowchart illustrating a self-assembly method according to the present invention.
11 is a conceptual diagram illustrating a first state of a substrate chuck.
12 is a conceptual diagram illustrating a second state of the substrate chuck.
13 is a plan view of a first frame provided in the substrate chuck.
14 is a conceptual diagram illustrating a state in which an assembled substrate is loaded on a substrate chuck.
15 is a perspective view of a magnetic field forming unit according to an embodiment of the present invention.
16 is a side view of a magnetic field forming unit according to an embodiment of the present invention.
17 is a bottom side view of another magnetic field forming part of the embodiment of the present invention.
18 is a conceptual diagram illustrating a trajectory of magnets provided in the magnetic field forming unit according to the present invention.
19 is a conceptual diagram illustrating a state in which a semiconductor light emitting device is supplied.
20 is a plan view of an assembly chamber according to an embodiment of the present invention.
FIG. 21 is a cross-sectional view taken along the line AA ′ of FIG. 20.
22 and 23 are conceptual views illustrating a movement of a gate provided in an assembly chamber according to an embodiment of the present invention.
24 is a conceptual diagram illustrating a substrate warpage phenomenon generated during self-assembly.
25 is a conceptual diagram illustrating a method for correcting warpage of a substrate.
26 is a flowchart showing a method for correcting warpage of a substrate.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, and the same or similar components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "unit" for components used in the following description are given or mixed in consideration of ease of specification, and do not have distinct meanings or roles. In addition, in the following description of the embodiments disclosed herein, when it is determined that the detailed description of the related known technology may obscure the gist of the embodiments disclosed herein, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easily understanding the exemplary embodiments disclosed herein and are not to be construed as limiting the technical spirit disclosed in the present specification by the accompanying drawings.

Also, when an element such as a layer, region or substrate is referred to as being on another component "on", it is to be understood that it may be directly on another element or there may be an intermediate element in between. There will be.

The display device described herein includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant, a portable multimedia player, a navigation, and a slate PC. , Tablet PC, Ultra Book, Digital TV, Digital Signage, Head Mounted Display (HMD), Desktop Computer. However, it will be apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of displaying even a new product form developed later.

1 is a conceptual diagram illustrating an embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 2 is an enlarged view of a portion A of the display device of FIG. 1, and FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG. 4 is an enlarged view illustrating another embodiment of the semiconductor light emitting device of FIG. 2.

As illustrated, information processed by the controller of the display apparatus 100 may be output from the display module 140. A closed loop-shaped case 101 surrounding the edge of the display module may form a bezel of the display device.

The display module 140 includes a panel 141 for displaying an image, and the panel 141 includes a micro-sized semiconductor light emitting device 150 and a wiring board 110 on which the semiconductor light emitting device 150 is mounted. It may be provided.

Wiring may be formed on the wiring substrate 110 to be connected to the n-type electrode 152 and the p-type electrode 156 of the semiconductor light emitting device 150. As a result, the semiconductor light emitting device 150 may be provided on the wiring board 110 as individual pixels that emit light.

The image displayed on the panel 141 is visual information and is realized by independently controlling light emission of sub-pixels arranged in a matrix form through the wiring.

In the present invention, a micro light emitting diode (LED) is exemplified as one kind of the semiconductor light emitting device 150 for converting current into light. The micro LED may be a light emitting diode formed in a small size of less than 100 micro. The semiconductor light emitting device 150 includes blue, red, and green light emitting regions, respectively, and a unit pixel may be implemented by a combination thereof. That is, the unit pixel means a minimum unit for implementing one color, and at least three micro LEDs may be provided in the unit pixel.

More specifically, referring to FIG. 3, the semiconductor light emitting device 150 may have a vertical structure.

For example, the semiconductor light emitting device 150 is mainly composed of gallium nitride (GaN), and indium (In) and / or aluminum (Al) is added together to implement a high output light emitting device that emits various lights including blue. Can be.

The vertical semiconductor light emitting device includes a p-type electrode 156, a p-type semiconductor layer 155 formed on the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, and an active layer 154. An n-type semiconductor layer 153 formed on the n-type semiconductor layer 153 and an n-type electrode 152 formed on the n-type semiconductor layer 153. In this case, the lower p-type electrode 156 may be electrically connected to the p-electrode of the wiring board, and the upper n-type electrode 152 may be electrically connected to the n-electrode above the semiconductor light emitting device. Since the vertical semiconductor light emitting device 150 can arrange electrodes up and down, it has a great advantage of reducing the chip size.

As another example, referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

As an example, the semiconductor light emitting device 150 'may be formed on the p-type semiconductor layer 155' and the p-type semiconductor layer 155 'on which the p-type electrode 156' and the p-type electrode 156 'are formed. An n-type semiconductor layer 153 'formed on the active layer 154', an n-type semiconductor layer 153 'formed on the active layer 154', and an n-type spaced apart from the p-type electrode 156 'in a horizontal direction. Electrode 152 '. In this case, both the p-type electrode 156 'and the n-type electrode 152' may be electrically connected to the p-electrode and the n-electrode of the wiring board under the semiconductor light emitting device.

The vertical semiconductor light emitting device and the horizontal semiconductor light emitting device may be green semiconductor light emitting devices, blue semiconductor light emitting devices, or red semiconductor light emitting devices, respectively. In the case of the green semiconductor light emitting device and the blue semiconductor light emitting device, gallium nitride (GaN) is mainly used, and indium (In) and / or aluminum (Al) is added together to realize a high output light emitting device emitting green or blue light. Can be. As such an example, the semiconductor light emitting device may be a gallium nitride thin film formed of various layers such as n-Gan, p-Gan, AlGaN, InGan, and specifically, the p-type semiconductor layer is P-type GaN, and the n The type semiconductor layer may be N-type GaN. However, in the case of a red semiconductor light emitting device, the p-type semiconductor layer may be P-type GaAs, and the n-type semiconductor layer may be N-type GaAs.

The p-type semiconductor layer may be a P-type GaN doped with Mg at the p electrode side, and an N-type GaN doped with Si at the n-type semiconductor layer. In this case, the above-described semiconductor light emitting devices can be semiconductor light emitting devices without an active layer.

Meanwhile, referring to FIGS. 1 to 4, since the light emitting diode is very small, the display panel may have a unit pixel for self-luminous having a high definition, and a high quality display device may be realized.

In the display device using the semiconductor light emitting device of the present invention described above, a semiconductor light emitting device grown on a wafer and formed through mesa and isolation is used as an individual pixel. In this case, the micro-sized semiconductor light emitting device 150 should be transferred to a wafer at a predetermined position on the substrate of the display panel. Such transfer techniques include pick and place, but have a low success rate and require a lot of time. As another example, there is a technique of transferring a plurality of elements at a time by using a stamp or a roll, but the yield is limited, which is not suitable for a large screen display. The present invention proposes a new manufacturing method and apparatus for manufacturing a display device that can solve this problem.

To this end, first, a new manufacturing method of the display apparatus will be described. 5A through 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.

In the present specification, a display device using a passive matrix (PM) type semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) type semiconductor light emitting device. Also, the self-assembling method of the horizontal semiconductor light emitting device is exemplified, but it is also applicable to the self-assembling method of the vertical semiconductor light emitting device.

First, according to the manufacturing method, the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 are grown on the growth substrate 159 (FIG. 5A).

When the first conductive semiconductor layer 153 grows, next, an active layer 154 is grown on the first conductive semiconductor layer 153, and then a second conductive semiconductor is formed on the active layer 154. The layer 155 is grown. As such, when the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 are sequentially grown, as shown in FIG. 5A, the first conductive semiconductor layer 153 may be formed. The active layer 154 and the second conductive semiconductor layer 155 form a stacked structure.

In this case, the first conductive semiconductor layer 153 may be a p-type semiconductor layer, and the second conductive semiconductor layer 155 may be an n-type semiconductor layer. However, the present invention is not necessarily limited thereto, and an example in which the first conductive type is n-type and the second conductive type is p-type is also possible.

In addition, the present embodiment illustrates the case where the active layer is present, but as described above, a structure without the active layer may be possible in some cases. For example, the p-type semiconductor layer may be a P-type GaN doped with Mg, and the n-type semiconductor layer may be a case where the n-electrode side is N-type GaN doped with Si.

The growth substrate 159 (wafer) may be formed of a material having a light transmitting property, for example, any one of sapphire (Al 2 O 3), GaN, ZnO, and AlO, but is not limited thereto. In addition, the growth substrate 1059 may be formed of a material suitable for growth of a semiconductor material, a carrier wafer. At least one of Si, GaAs, GaP, InP, and Ga2O3 may be formed of a material having excellent thermal conductivity, including a conductive substrate or an insulating substrate, for example, a SiC substrate having a higher thermal conductivity than a sapphire (Al2O3) substrate. Can be used

Next, at least some of the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 are removed to form a plurality of semiconductor light emitting devices (FIG. 5B).

More specifically, isolation is performed so that the plurality of light emitting elements form a light emitting element array. That is, the first conductive semiconductor layer 153, the active layer 154, and the second conductive semiconductor layer 155 are etched in the vertical direction to form a plurality of semiconductor light emitting devices.

If the horizontal semiconductor light emitting device is formed, a part of the active layer 154 and the second conductive semiconductor layer 155 are removed in the vertical direction, and the first conductive semiconductor layer 153 is moved outward. The exposed mesa process may be performed, and then isolation may be performed to etch the first conductive semiconductor layer to form a plurality of semiconductor light emitting device arrays.

Next, second conductive electrodes 156 or p-type electrodes are formed on one surface of the second conductive semiconductor layer 155 (FIG. 5C). The second conductive electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto. However, when the first conductive semiconductor layer and the second conductive semiconductor layer are n-type semiconductor layers and p-type semiconductor layers, respectively, the second conductive electrode 156 may be an n-type electrode.

Next, the growth substrate 159 is removed to provide a plurality of semiconductor light emitting devices. For example, the growth substrate 1059 may be removed using a laser lift-off (LLO) or chemical lift-off (CLO) (FIG. 5D).

Thereafter, in the fluid filled chamber, the semiconductor light emitting elements 150 are seated on the substrate (FIG. 5E).

For example, the semiconductor light emitting devices 150 and the substrate are placed in a chamber filled with fluid to allow the semiconductor light emitting devices to be assembled to the substrate 161 by using flow, gravity, and surface tension. In this case, the substrate may be an assembled substrate 161.

As another example, the semiconductor light emitting device 150 may be directly seated on the wiring board by inserting the wiring board into the assembly chamber instead of the assembly board 161. In this case, the substrate may be a wiring board. However, for convenience of description, the present invention illustrates that the substrate is provided as the assembled substrate 161 so that the semiconductor light emitting devices 1050 are seated.

In order to facilitate mounting of the semiconductor light emitting devices 150 on the assembly board 161, cells (not shown) into which the semiconductor light emitting devices 150 may be inserted may be provided on the assembly board 161. Specifically, the assembled substrate 161 is formed with cells in which the semiconductor light emitting devices 150 are seated at positions where the semiconductor light emitting devices 150 are aligned with the wiring electrodes. The semiconductor light emitting elements 150 move in the fluid and are assembled to the cells.

After the plurality of semiconductor light emitting devices are arranged on the assembly board 161, the semiconductor light emitting devices of the assembly board 161 are transferred to the wiring board, thereby enabling transfer of a large area. Thus, the assembled substrate 161 may be referred to as a temporary substrate.

On the other hand, in order to apply the self-assembly method described above to the manufacture of a large screen display, the transfer yield must be increased. The present invention proposes a method and apparatus for minimizing the effects of gravity or friction and preventing nonspecific binding in order to increase the transfer yield.

In this case, the display device according to the present invention, by placing a magnetic material on the semiconductor light emitting device to move the semiconductor light emitting device by using a magnetic force, and seats the semiconductor light emitting device at a predetermined position by using an electric field during the movement process. Hereinafter, the transfer method and apparatus will be described in more detail with reference to the accompanying drawings.

6 is a conceptual diagram illustrating an example of a self-assembly device of a semiconductor light emitting device according to the present invention, and FIG. 7 is a block diagram of the self-assembly device of FIG. 6. 8A to 8D are conceptual views illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly device of FIG. 6, and FIG. 9 is a conceptual view illustrating the semiconductor light emitting devices of FIGS. 8A to 8D.

6 and 7, the self-assembly device 160 of the present invention may include an assembly chamber 162, a magnet 163, and a position controller 164.

The assembly chamber 162 has a space for accommodating a plurality of semiconductor light emitting devices. The space may be filled with a fluid, and the fluid may include water or the like as an assembly solution. Therefore, the assembly chamber 162 may be a water tank and may be configured as an open type. However, the present invention is not limited thereto, and the assembly chamber 162 may have a closed shape in which the space is closed.

In the assembly chamber 162, a substrate 161 may be disposed such that an assembly surface on which the semiconductor light emitting devices 150 are assembled is faced downward. For example, the substrate 161 may be transferred to an assembly position by a transfer unit, and the transfer unit may include a stage 165 on which the substrate is mounted. The stage 165 is positioned by the control unit, through which the substrate 161 may be transferred to the assembly position.

At this time, the assembly surface of the substrate 161 at the assembly position is toward the bottom of the assembly chamber 162. According to the illustration, the assembly surface of the substrate 161 is disposed to be submerged in the fluid in the assembly chamber 162. Therefore, the semiconductor light emitting device 150 moves to the assembly surface in the fluid.

The substrate 161 is an assembled substrate capable of forming an electric field, and may include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.

The base portion 161a is made of an insulating material, and the plurality of electrodes 161c may be a thin film or thick film bi-planar electrode patterned on one surface of the base portion 161a. The electrode 161c may be formed of, for example, a stack of Ti / Cu / Ti, Ag paste, ITO, or the like.

The dielectric layer 161b may be formed of an inorganic material such as SiO 2, SiN x, SiON, Al 2 O 3, TiO 2, HfO 2, or the like. Alternatively, the dielectric layer 161b may be composed of a single layer or multiple layers as an organic insulator. The dielectric layer 161b may have a thickness of several tens of nm to several μm.

Furthermore, the substrate 161 according to the present invention includes a plurality of cells 161d partitioned by partition walls. The cells 161d may be sequentially disposed along one direction and made of a polymer material. In addition, the partition wall 161e constituting the cells 161d is configured to be shared with the neighboring cells 161d. The partition wall 161e protrudes from the base portion 161a, and the cells 161d may be sequentially disposed along one direction by the partition wall 161e. More specifically, the cells 161d may be sequentially disposed in the column and row directions, respectively, and have a matrix structure.

The interior of the cells 161d may include a groove for accommodating the semiconductor light emitting device 150 as illustrated, and the groove may be a space defined by the partition wall 161e. The shape of the groove may be the same as or similar to that of the semiconductor light emitting device. For example, when the semiconductor light emitting device is rectangular, the groove may be rectangular. In addition, although not shown, when the semiconductor light emitting device is circular, the groove formed in the cells may be circular. Furthermore, each of the cells is adapted to receive a single semiconductor light emitting element. That is, one semiconductor light emitting element is accommodated in one cell.

Meanwhile, the plurality of electrodes 161c may include a plurality of electrode lines disposed at the bottom of each of the cells 161d, and the plurality of electrode lines may extend to neighboring cells.

The plurality of electrodes 161c are disposed below the cells 161d, and different polarities are applied to each other to generate an electric field in the cells 161d. In order to form the electric field, the dielectric layer may cover the plurality of electrodes 161c, and the dielectric layer may form a bottom of the cells 161d. In this structure, when different polarities are applied to the pair of electrodes 161c under the cells 161d, an electric field is formed, and the semiconductor light emitting device may be inserted into the cells 161d by the electric field. have.

In the assembly position, the electrodes of the substrate 161 are electrically connected to the power supply unit 171. The power supply unit 171 performs a function of generating the electric field by applying power to the plurality of electrodes.

According to an embodiment, the self-assembly device may include a magnet 163 for applying magnetic force to the semiconductor light emitting devices. The magnet 163 is spaced apart from the assembly chamber 162 to apply a magnetic force to the semiconductor light emitting devices 150. The magnet 163 may be disposed to face the opposite surface of the assembly surface of the substrate 161, and the position of the magnet is controlled by the position controller 164 connected to the magnet 163.

The semiconductor light emitting device 1050 may include a magnetic material to move in the fluid by the magnetic field of the magnet 163.

Referring to FIG. 9, a semiconductor light emitting device including a magnetic material may include a first conductive semiconductor layer in which a first conductive electrode 1052, a second conductive electrode 1056, and the first conductive electrode 1052 are disposed. 1053, a second conductive semiconductor layer 1055 overlapping the first conductive semiconductor layer 1052, on which the second conductive electrode 1056 is disposed, and the first and second conductive semiconductor layers 1055. Active layer 1054 disposed between layers 1053 and 1055.

Here, the first conductive type may be p-type, the second conductive type may be n-type, and vice versa. In addition, as described above, the semiconductor light emitting device may be a semiconductor light emitting device having no active layer.

Meanwhile, in the present invention, the first conductive electrode 1052 may be generated after the semiconductor light emitting device is assembled to the wiring board by self-assembly of the semiconductor light emitting device. In addition, in the present invention, the second conductive electrode 1056 may include the magnetic material. Magnetic material may mean a magnetic metal. The magnetic material may be Ni, SmCo, or the like, and as another example, may include a material corresponding to at least one of Gd, La, and Mn.

The magnetic body may be provided in the second conductive electrode 1056 in the form of particles. Alternatively, in the conductive electrode including the magnetic body, one layer of the conductive electrode may be formed of the magnetic body. For example, as illustrated in FIG. 9, the second conductive electrode 1056 of the semiconductor light emitting device 1050 may include a first layer 1056a and a second layer 1056b. Here, the first layer 1056a may be formed to include a magnetic material, and the second layer 1056b may include a metal material which is not a magnetic material.

As illustrated, in the present example, the first layer 1056a including the magnetic material may be disposed to contact the second conductive semiconductor layer 1055. In this case, the first layer 1056a is disposed between the second layer 1056b and the second conductive semiconductor layer 1055. The second layer 1056b may be a contact metal connected to the second electrode of the wiring board. However, the present invention is not necessarily limited thereto, and the magnetic material may be disposed on one surface of the first conductive semiconductor layer.

Referring back to FIGS. 6 and 7, more specifically, the self-assembly device includes a magnet handler that can move automatically or manually in the x, y, z axis on the top of the assembly chamber, or the magnet 163. It may be provided with a motor capable of rotating. The magnet handler and the motor may configure the position controller 164. Through this, the magnet 163 is rotated in a direction horizontal, clockwise or counterclockwise with the substrate 161.

Meanwhile, a light transmissive bottom plate 166 may be formed in the assembly chamber 162, and the semiconductor light emitting devices may be disposed between the bottom plate 166 and the substrate 161. An image sensor 167 may be disposed to face the bottom plate 166 to monitor the interior of the assembly chamber 162 through the bottom plate 166. The image sensor 167 is controlled by the controller 172 and may include an inverted type lens, a CCD, or the like to observe the assembly surface of the substrate 161.

The self-assembly apparatus described above is configured to use a combination of a magnetic field and an electric field. When the self-assembly device is used, the semiconductor light emitting devices may be seated at a predetermined position of the substrate by an electric field in the process of moving by changing the position of the magnet. Can be. Hereinafter, the assembly process using the above-described self-assembly device will be described in more detail.

First, a plurality of semiconductor light emitting devices 1050 including a magnetic material are formed through the process described with reference to FIGS. 5A to 5C. In this case, in the process of forming the second conductive electrode of FIG. 5C, a magnetic material may be deposited on the semiconductor light emitting device.

Next, the substrate 161 is transferred to the assembly position, and the semiconductor light emitting elements 1050 are introduced into the assembly chamber 162 (FIG. 8A).

As described above, the assembly position of the substrate 161 may be a position disposed in the assembly chamber 162 such that the assembly surface on which the semiconductor light emitting elements 1050 of the substrate 161 are assembled faces downward. Can be.

In this case, some of the semiconductor light emitting elements 1050 may sink to the bottom of the assembly chamber 162 and some may float in the fluid. When the transparent bottom plate 166 is provided in the assembly chamber 162, some of the semiconductor light emitting elements 1050 may sink to the bottom plate 166.

Next, a magnetic force is applied to the semiconductor light emitting elements 1050 so that the semiconductor light emitting elements 1050 float in the vertical direction in the assembly chamber 162 (FIG. 8B).

When the magnet 163 of the self-assembly device is moved from its original position to the opposite surface of the assembly surface of the substrate 161, the semiconductor light emitting elements 1050 float in the fluid toward the substrate 161. The home position may be a position away from the assembly chamber 162. As another example, the magnet 163 may be formed of an electromagnet. In this case, the initial magnetic force is generated by supplying electricity to the electromagnet.

On the other hand, in this example, by adjusting the magnitude of the magnetic force, the separation distance between the assembly surface of the substrate 161 and the semiconductor light emitting devices 1050 can be controlled. For example, the separation distance is controlled using the weight, buoyancy, and magnetic force of the semiconductor light emitting devices 1050. The separation distance may be several millimeters to several tens of micrometers from the outermost portion of the substrate.

Next, a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 move in one direction in the assembly chamber 162. For example, the magnet 163 moves in a direction horizontal to the substrate, clockwise or counterclockwise (FIG. 8C). In this case, the semiconductor light emitting devices 1050 are moved along the horizontal direction with the substrate 161 at a position spaced apart from the substrate 161 by the magnetic force.

Next, inducing the semiconductor light emitting devices 1050 to the predetermined position by applying an electric field so as to be seated at a predetermined position of the substrate 161 during the movement of the semiconductor light emitting devices 1050. Proceed (FIG. 8C). For example, while the semiconductor light emitting devices 1050 are moved in a horizontal direction with the substrate 161, the semiconductor light emitting devices 1050 are moved in a direction perpendicular to the substrate 161 by the electric field, thereby allowing the substrate 161 to be moved. It is seated at the set position.

More specifically, the electric field is generated by supplying power to the bi-planar electrode of the substrate 161 and using the same, it is induced to be assembled only at a predetermined position. That is, the semiconductor light emitting devices 1050 are assembled by themselves to the assembly position of the substrate 161 using the selectively generated electric field. To this end, the substrate 161 may be provided with cells into which the semiconductor light emitting devices 1050 are fitted.

Thereafter, the unloading process of the substrate 161 is performed, and the assembly process is completed. When the substrate 161 is an assembled substrate, a post-process for implementing a display device by transferring the arrayed semiconductor light emitting devices to the wiring substrate as described above may be performed.

On the other hand, after inducing the semiconductor light emitting elements 1050 to the predetermined position, the magnet so that the semiconductor light emitting elements 1050 remaining in the assembly chamber 162 fall to the bottom of the assembly chamber 162. 163 may be moved in a direction away from the substrate 161 (FIG. 8D). As another example, when the power supply is stopped when the magnet 163 is an electromagnet, the semiconductor light emitting elements 1050 remaining in the assembly chamber 162 fall to the bottom of the assembly chamber 162.

Subsequently, when the semiconductor light emitting devices 1050 at the bottom of the assembly chamber 162 are recovered, the recovered semiconductor light emitting devices 1050 may be reused.

The self-assembly apparatus and method described above uses magnetic fields to concentrate distant parts near a predetermined assembly site using a magnetic field to increase assembly yield in a fluidic assembly, and selectively applies components only to the assembly site by applying a separate electric field to the assembly site. To be assembled. At this time, the assembly board is placed in the upper part of the tank and the assembly surface is faced downward to minimize the gravity effect due to the weight of the parts while preventing nonspecific binding to eliminate the defect. That is, the assembly board is placed on the top to increase the transfer yield, thereby minimizing the influence of gravity or friction and preventing nonspecific binding.

As described above, according to the present invention having the above-described configuration, in a display device in which individual pixels are formed of semiconductor light emitting devices, a large amount of semiconductor light emitting devices can be assembled at a time.

As described above, according to the present invention, a large amount of semiconductor light emitting devices can be pixelated on a small wafer and then transferred to a large area substrate. Through this, it is possible to manufacture a large-area display device at low cost.

When performing the self-assembly process described above, several problems arise.

First, as the area of the display increases, the area of the assembly board increases. As the area of the assembly board increases, the problem that the warpage of the substrate increases. When the self-assembly is performed while the assembly board is bent, since the magnetic field is not uniformly formed on the surface of the assembly board, self-assembly is difficult to be performed stably.

Second, since the semiconductor light emitting device cannot be completely uniformly dispersed in the fluid and the magnetic field formed on the surface of the assembly board cannot be perfectly uniform, a problem occurs in which the semiconductor light emitting device is concentrated only on a part of the assembly board. Can be.

The present invention provides not only the above-described problems but also a self-assembly device capable of increasing self-assembly yield.

The self-assembling apparatus according to the present invention may include a substrate surface treatment unit, a substrate chuck 200, a magnetic field forming unit 300, a chip supply unit 400, and an assembly chamber 500. However, the present invention is not limited thereto, and the self-assembly device according to the present invention may include more or less components than those described above.

Prior to describing the self-assembling apparatus according to the present invention, a self-assembly method using the self-assembling apparatus according to the present invention will be briefly described.

10 is a flowchart illustrating a self-assembly method according to the present invention.

First, the surface treatment step S110 of the assembled substrate is performed. This step is not essential, but when the surface of the substrate is hydrophilized, bubbles can be prevented from occurring on the surface of the substrate.

Next, the step (S120) of loading the assembled substrate on the substrate chuck is in progress. The assembly substrate loaded on the substrate chuck 200 is transferred to the assembly position of the assembly chamber. The magnetic field forming portion then approaches the assembly substrate through vertical and horizontal movement.

In this state, step S130 of supplying a chip is performed. Specifically, the step of dispersing the semiconductor light emitting device on the assembly surface of the assembly substrate is in progress. When the semiconductor light emitting device is dispersed near the assembly surface in a state in which the magnetic field forming unit 300 is sufficiently close to the assembly substrate, the semiconductor light emitting devices adhere to the assembly surface by the magnetic field forming unit. The semiconductor light emitting elements are distributed on the assembly surface with an appropriate dispersion.

However, the present invention is not limited thereto, and the semiconductor light emitting device may be dispersed in the fluid in the assembly chamber before the substrate is transferred to the assembly position. That is, the time point at which the chip supply step S130 is performed is not limited to after the assembly substrate is transferred to the assembly position.

The supply method of the semiconductor light emitting device may vary depending on the area of the assembly substrate, the type of the semiconductor light emitting device to be assembled, and the self-assembly speed.

Thereafter, self-assembly is performed, and the step of recovering the semiconductor light emitting device (S140) is performed. Self-assembly will be described later together with the description of the self-assembly according to the present invention. On the other hand, the semiconductor light emitting device does not necessarily have to be recovered after self-assembly. After the self-assembly is completed, the self-assembly of the new substrate may be performed after replenishing the semiconductor light emitting device in the assembly chamber.

Finally, after the self-assembly is completed, a step (S150) of inspecting and drying the assembled substrate and separating the substrate from the substrate chuck may be performed. The inspection of the assembly board may be performed at the position where the self assembly has been performed, and may be performed after transferring the assembly board to another position.

On the other hand, drying of the assembly substrate may be performed after leaving the assembly substrate from the fluid. After drying the assembly substrate, a self-assembly post-process may be performed.

The basic principles of self-assembly, the structure of the substrate (or assembly substrate), and the semiconductor light emitting device are replaced with the contents described with reference to FIGS. 1 to 9. Meanwhile, the vertical moving unit, the horizontal moving unit, the rotating unit, and other moving means described below may be implemented through various known means such as a motor, a ball screw, a rack gear and a pinion gear, a pulley, a timing belt, and the like. Omit.

Meanwhile, the controller 172 described in FIG. 7 controls the movement of the vertical moving part, the horizontal moving part, the rotating part, and other moving means provided in the above-described elements. That is, the controller 172 is configured to control the movement and rotational movement of the x, y, z axis of each component. Although not specifically mentioned herein, the movement of the vertical moving unit, the horizontal moving unit, the rotating unit, and other moving means is generated by the control of the controller 172.

Meanwhile, the electrode 161c provided in the substrate (or assembly substrate 161) described with reference to FIGS. 6 to 9 is referred to as an assembly electrode, and the assembly electrode 161c is connected to the power supply unit described with reference to FIG. 7 through the substrate chuck 200. It is electrically connected to the 171, the power supply unit 171 supplies power to the assembly electrode (161c) under the control of the controller 172. Detailed description thereof will be described later.

Hereinafter, the above-described components will be described.

First, the substrate surface treatment part serves to hydrophilize the substrate surface. Specifically, the self-assembly apparatus according to the present invention performs self-assembly in a state in which the assembly substrate is in contact with the fluid surface. When the assembly surface of the assembly substrate has a heterogeneous property with the fluid surface, bubbles may be generated in the assembly surface, and nonspecific bonding may occur between the semiconductor light emitting device and the assembly surface. To prevent this, the substrate surface can be treated with fluid-friendly properties before self-assembly.

In one embodiment, when the fluid is a polar material such as water, the substrate surface treatment unit may hydrophilize the assembly surface of the substrate.

For example, the substrate surface treatment unit may include a plasma generator. Plasma treatment of the substrate surface allows the formation of hydrophilic functional groups on the substrate surface. Specifically, hydrophilic functional groups may be formed in at least one of the barrier rib and the dielectric layer provided in the substrate through the plasma treatment.

Meanwhile, different surface treatments may be performed on the barrier rib surface and the surface of the dielectric layer exposed to the outside by the cell so as to prevent nonspecific coupling of the semiconductor light emitting device. For example, hydrophilic treatment may be performed on the surface of the dielectric layer exposed to the outside by the cell, and surface treatment may be performed to form hydrophobic functional groups on the surface of the partition wall. Through this, non-specific coupling of the semiconductor light emitting device to the partition surface can be prevented, and the semiconductor light emitting device can be strongly fixed inside the cell.

However, the substrate surface treatment portion is not an essential component in the self-assembly device according to the present invention. The substrate surface treatment unit may not be necessary, depending on the material of the substrate.

The substrate on which the surface treatment is completed by the substrate surface treatment unit is loaded into the substrate chuck 200.

Next, the substrate chuck 200 will be described.

11 is a conceptual diagram illustrating a first state of a substrate chuck, FIG. 12 is a conceptual diagram illustrating a second state of a substrate chuck, FIG. 13 is a plan view of a first frame provided in the substrate chuck, and FIG. A conceptual diagram showing a loaded state.

Referring to the accompanying drawings, the substrate chuck 200 has a substrate support. In an embodiment, the substrate support part includes first and second frames 210 and 220 and a fixing part 230. The first and second frames 210 and 220 are disposed up and down with the loaded substrate interposed therebetween, and the fixing part 230 supports the first and second frames 210 and 220. The substrate chuck 200 may include all of the rotating part 240, the vertical moving part, and the horizontal moving part 250. As illustrated in FIG. 11, the vertical moving unit and the horizontal moving unit 250 may be formed of one device. Meanwhile, the present invention is not limited to the drawings described below, and the rotating part, the vertical and the horizontal moving parts provided in the substrate chuck may be formed of one device.

In the present specification, the first frame 210 is defined as a frame disposed below the substrate in a state in which the assembly surface of the substrate S faces the fluid, and the second frame 220 is a state in which the assembly surface of the substrate faces the fluid. It defines as the frame arrange | positioned above a board | substrate. Due to the rotating part 240, the vertical relationship between the first frame 210 and the second frame 220 may be switched with each other. In the present specification, a state in which the first frame 210 is lower than the second frame 220 is defined as a first state (see FIG. 11), and the first frame 210 is the second frame 220. The state above is defined as a second state (see FIG. 12). The rotating part 240 rotates at least one of the first and second frames 210 and 220 and the fixing part 230 to switch from one of the first and second states to the other. The rotating part 240 will be described later.

The first frame 210 is a frame contacting the filled fluid in the assembly chamber during self-assembly. Referring to FIG. 14, the first frame 210 has a bottom portion 210 ′ and a side wall portion 210 ″.

The bottom portion 210 ′ supports the substrate at the lower side or the upper side of the substrate S when the substrate S is loaded. The bottom portion 210 ′ may be formed in one plate shape, or may be formed in a shape in which a plurality of members forming a plate shape are combined. Referring to FIG. 13, the bottom portion 210 ′ has a hole 210 ′ ″ penetrating the central portion. The hole 210 ′ ″ may expose a substrate, which will be described later, to the outside to be in contact with the fluid. That is, the hole 210 '' 'defines an assembly surface of the substrate. The substrate is loaded such that the four edges of the quadrilateral substrate span the edge of the hole 210 '' 'of the first frame 210. Accordingly, the remaining area except the edge of the substrate overlaps the hole 210 ′ ″ provided in the first frame 210. An area of the substrate overlapping the hole 210 '' 'becomes an assembly surface.

Meanwhile, a sealing part 212 and an electrode connection part 213 may be disposed at an edge of the hole 210 ′ ″.

The sealing part 212 is in close contact with the substrate to prevent the fluid filled in the assembly chamber from penetrating into the first and second frames 210 and 220 during self-assembly. In addition, the sealing part 212 prevents fluid from penetrating into the assembly electrode 161c and the electrode connection part 213. For this purpose, the sealing part 212 should be disposed at a position closer to the hole 210 ′ ″ than the electrode connection part 213.

The sealing part 212 is formed in a ring shape, and the material of the sealing part 212 is not particularly limited. The material constituting the sealing portion 212 may be a known sealing material.

The electrode connector 213 is connected to the assembly electrode formed on the substrate to supply power to the assembly electrode. In an embodiment, the electrode connector 213 may apply power supplied from the power supply unit 171 described with reference to FIG. 7 to the assembly electrode 161c to form an electric field on the substrate.

Meanwhile, the sidewall portion 210 ″ is formed at the edge of the bottom portion 210 ′. The side wall portion 210 ″ prevents fluid from penetrating into the surface opposite to the assembly surface of the substrate during self-assembly. Specifically, the self-assembly apparatus according to the present invention performs self-assembly while the substrate is submerged in the fluid. The side wall portion 210 ″ prevents the fluid from penetrating the surface opposite the assembly surface of the substrate when the substrate is immersed in the fluid.

To this end, the side wall portion 210 ″ is formed to surround the entire edge of the substrate. The height of the side wall portion 210 ″ must be greater than the depth at which the substrate is submerged in the fluid. The side wall portion 210 ″ prevents the fluid from penetrating into the opposite side of the assembly surface of the substrate, thereby preventing the substrate from being damaged and allowing the buoyancy of the fluid to act on only one surface of the substrate. This will be described later.

On the other hand, the second frame 220 serves to press the substrate on the opposite side of the first frame 210 during self-assembly. Like the first frame 210, the second frame 220 has a hole passing through the central portion. The hole formed in the second frame 220 is formed to have a size equal to or larger than that of the hole 210 '″ formed in the first frame 210.

The hole formed in the second frame 220 allows the opposite surface of the assembly surface of the substrate to be exposed to the outside. The opposite side of the assembly surface of the substrate should be exposed to the outside in the same area as the assembly surface or in a larger area than the assembly surface. This is because the magnetic field forming unit 300 forms a magnetic field on the opposite side of the assembly surface of the substrate. In order for the magnetic field forming unit 300 to be close enough to the substrate, the opposite side of the assembly surface of the substrate should be exposed to the outside.

Meanwhile, the substrate S is loaded between the first and second frames 210 and 220 in the second state. Accordingly, the substrate S is loaded while sliding on one surface of the second frame 220. In order to align the substrate to the correct position, at least one of the first and second frames may be provided with a protrusion for guiding the alignment position of the substrate. In an embodiment, referring to FIG. 13, a protrusion 211 guiding an alignment position of the substrate S may be formed in the first frame 210.

Meanwhile, when the substrate S is loaded on the second frame 220, at least one of the first and second frames 210 and 220 performs vertical movement so that the first and second frames 210 and 220 pressurizes the substrate. To this end, the substrate chuck 200 may include a frame moving part disposed on at least one of the fixing part 230, the first frame, and the second frame 210 and 220. At this time, the sealing unit 212 is to press the substrate (S).

In one embodiment, a frame moving part for vertically moving the second frame 220 may be disposed in the fixing part 230. When the substrate S is loaded on the second frame 220 in the second state, the vertical moving part moves the second frame 220 upward, so that the substrate S is It can be strongly fixed between the first and second frames (210 and 220). At this time, the electrode connecting portion 213 provided in the first frame 210 is connected to the assembly electrode of the substrate (S), the sealing portion 212 provided in the first frame 210 is the edge of the substrate (S) Will be pressed. In this state, when the substrate chuck switches to the first state, the substrate chuck has a shape as shown in FIG.

However, the present invention is not limited thereto, and the frame moving unit may be formed to horizontally move any one of the first and second frames 210 and 220 with respect to the other. In this case, the frame moving unit is configured to move one of the first and second frames 210 and 220 vertically and horizontally with respect to the other. When one of the first and second frames 210 and 220 can be moved horizontally with respect to the other, it is possible to change the connection between the electrode connecting portion 213 and the assembly electrode. This can be used to detect whether the assembled electrode is defective.

Meanwhile, the rotating part 240 is disposed at one side of the fixing part 230 provided in the substrate chuck 200. The rotating part 240 rotates the fixing part 230 so that the first and second frames 210 and 220 can be switched up and down. The substrate chuck 200 is switched from one of the first and second states to the other by the rotational movement of the rotary part 240. The rotation speed, rotation degree, rotation direction, etc. of the rotation unit 240 may be controlled by the controller 172 described with reference to FIG. 7.

In one embodiment, before loading the substrate S, the substrate chuck 200 is in a second state, and the controller 172 is rotated by the rotating part 240 after the substrate S is loaded at 180 degrees. Rotation causes the substrate chuck 200 to switch to the first state.

Meanwhile, a vertical moving part and a horizontal moving part are disposed at one side of the fixing part 230.

The horizontal moving unit moves at least one of the fixing unit 230, the first and second frames 210 and 220 so that the assembly surface of the substrate may be aligned at an open position of the assembly chamber after loading the substrate.

The vertical moving part moves at least one of the fixing part 230, the first and second frames 210 and 220 so that the vertical distance between the substrate and the assembly chamber is adjusted. The warpage phenomenon of the substrate S may be corrected through the vertical moving part. This will be described later.

In summary, the substrate S is loaded with the substrate chuck 200 in the second state (see FIG. 12). Thereafter, the substrate chuck 200 is switched to the first state (see FIG. 11) and then aligned with the assembly chamber. In this process, the substrate chuck 200 moves vertically and horizontally so that the assembly surface of the substrate S is in contact with the fluid filled in the assembly chamber. Thereafter, the controller 172 controls the magnetic field forming unit 300.

Next, the magnetic field forming unit 300 will be described.

15 is a perspective view of a magnetic field forming unit according to an embodiment of the present invention, FIG. 16 is a side view of the magnetic field forming unit according to an embodiment of the present invention, and FIG. 17 is a different magnetic field forming unit according to an embodiment of the present invention. 18 is a bottom view, and FIG. 18 is a conceptual diagram illustrating a trajectory of magnets provided in a magnetic field forming unit according to the present invention.

Referring to the drawings, the magnetic field forming unit 300 includes a magnet array 310, a vertical moving unit, a horizontal moving unit and a rotating unit 320. The magnetic field forming unit 300 is disposed above the assembly electrode to form a magnetic field.

In detail, the magnet array 310 includes a plurality of magnets 313. The magnet 313 provided in the magnet array 310 may be a permanent magnet or an electromagnet. The magnets 313 form a magnetic field to guide the semiconductor light emitting devices to the assembly surface of the substrate.

The magnet array 310 may include a support 311 and a magnet moving unit 312. The support part 311 is connected to the vertical and horizontal moving parts 320.

Meanwhile, one end of the magnet moving part 312 is fixed to the support part 311, and the magnet 313 is fixed to the other end of the magnet moving part 312. The magnet moving part 312 is made to be flexible in length, and as the magnet moving part 312 is stretched, the distance between the magnet 313 and the support part 311 changes.

As shown in the accompanying drawings, the magnet moving unit 312 may be configured to vertically move the magnets 313 arranged in one row at a time. In this case, the magnet moving unit 312 may be arranged for each column of the magnet array.

Alternatively, the magnet moving unit 312 may be arranged as many as the number of magnets provided in the magnet array. Accordingly, the distance between each of the plurality of magnets and the support may be adjusted differently.

The plurality of magnet moving parts finely adjust the gap between the magnet 313 and the substrate S, and when the substrate is bent, serves to uniformly adjust the gap between the magnets 313 and the substrate S. FIG. . Self-assembly may be performed in a state in which the magnet 313 is in contact with the substrate S or in a state in which the magnet 313 is spaced apart from the substrate S by a predetermined distance.

On the other hand, the horizontal moving unit may be provided with a rotating unit. When the self-assembly is performed, the horizontal moving part provided in the magnetic field forming part 300 moves the magnet in one direction and rotates it at the same time. Accordingly, the magnet array 310 is rotated about a predetermined axis of rotation and moves in one direction. For example, referring to FIG. 18, the magnet 313 provided in the magnet array 310 may move along a trace P in which a curve and a straight line are mixed.

The semiconductor light emitting device may be supplied while the magnetic field forming unit 300 is close to the substrate S within a predetermined distance.

19 is a conceptual diagram illustrating a state in which a semiconductor light emitting device is supplied.

Referring to FIG. 19, a chip supply unit 400 may be disposed in an assembly chamber 500 to be described later. The chip supply unit 400 aligns the substrate S to the assembly chamber 500, and then supplies the semiconductor light emitting device on the assembly surface of the substrate S. In detail, the chip supply unit 400 may include a chip receiver, a vertical mover, and a horizontal mover configured to accommodate a chip thereon. The vertical and horizontal moving parts allow the chip receptacle to move within the fluid filled in the assembly chamber.

A plurality of semiconductor light emitting devices may be loaded in the chip accommodating part. After the substrate is aligned with the assembly chamber, when the magnetic field forming unit 300 is brought closer to the substrate by a predetermined distance or more, a magnetic field having a predetermined intensity or more is formed on the assembly surface. In this state, when the chip accommodating part approaches the assembly surface within a predetermined distance, the semiconductor light emitting elements loaded in the chip accommodating part contact the substrate. The vertical moving unit provided in the chip supply unit moves the chip receiving unit to a portion of the assembly surface of the substrate within a predetermined distance through vertical movement.

After a predetermined time, the vertical moving part provided in the chip supply part causes the chip receiving part to move away from a partial region of the assembly surface of the substrate by a vertical movement. Thereafter, the horizontal moving unit provided in the chip supply unit horizontally moves the chip receiving unit so that the chip receiving unit overlaps with a region different from a partial region of the assembly surface. Thereafter, the vertical moving unit provided in the chip supply unit moves the chip receiving unit to the other region within a predetermined distance through vertical movement. By repeating this process, the chip supply unit contacts the plurality of semiconductor light emitting devices to the entire assembly surface of the substrate. Self-assembly may be performed in a state in which a plurality of semiconductor light emitting devices are constantly dispersed and in contact with the entire assembly surface of the substrate.

As described above, two problems arise in self-assembly. The second problem is that the semiconductor light emitting device cannot be completely uniformly dispersed in the fluid, and since the magnetic field formed on the surface of the assembly board cannot be perfectly uniform, the semiconductor light emitting device is concentrated only on a part of the assembly board. There is. Using the chip supply unit 400 described above, it is possible to solve the second problem described above.

However, the present invention is not limited thereto, and the chip supply unit is not an essential component of the present invention. Self-assembly may be performed in a state in which the semiconductor light emitting device is dispersed in a fluid, or in a state in which a plurality of semiconductor light emitting devices are dispersed and contacted with an assembly surface of the substrate by a part other than the chip supply unit.

Next, the assembly chamber 500 is demonstrated.

20 is a plan view of an assembly chamber according to an embodiment of the present invention, FIG. 21 is a cross-sectional view taken along the line A-A 'of FIG. 20, and FIGS. 22 and 23 are views of the assembly chamber according to an embodiment of the present invention. It is a conceptual diagram which shows the movement of the equipped gate.

The assembly chamber 500 has a space for accommodating a plurality of semiconductor light emitting devices. The space may be filled with a fluid, and the fluid may include water or the like as an assembly solution. Therefore, the assembly chamber 500 may be a water tank and may be configured as an open type. However, the present invention is not limited thereto, and the assembly chamber 500 may be a closed type in which the space is closed.

In the assembly chamber 500, a substrate S is disposed such that an assembly surface on which the semiconductor light emitting devices 150 are assembled is faced downward. For example, the substrate S is transferred to the assembly position by the substrate chuck 200.

At this time, the assembly surface of the substrate (S) at the assembly position is toward the bottom of the assembly chamber 500. Accordingly, the assembly surface faces the direction of gravity. The assembly surface of the substrate S is disposed to be immersed in the fluid in the assembly chamber 500.

In one embodiment, the assembly chamber 500 may be divided into two regions. In detail, the assembly chamber 500 may be divided into an assembly region 510 and an inspection region 520. In the assembly area 510, the semiconductor light emitting device disposed in the fluid while the substrate S is immersed in the fluid is assembled to the substrate S.

On the other hand, the inspection area 520 is inspected the substrate (S) is completed self-assembly. In detail, the substrate S is assembled to the assembly region and then transferred to the inspection region through the substrate chuck.

The same fluid may be filled in the assembly area 510 and the test area 520. The substrate may be transferred from the assembly area to the inspection area while submerged in the fluid. When the substrate S disposed in the assembly region 510 is taken out of the fluid, the pre-assembled semiconductor light emitting device may be separated from the substrate due to the surface energy between the fluid and the semiconductor light emitting device. For this reason, it is preferable that the said board | substrate is conveyed in the state submerged in the fluid.

The assembly chamber 500 may include a gate 530 configured to be movable up and down so that the substrate may be transferred while being locked in the fluid. As shown in FIG. 22, the gate 530 maintains an elevated state (first state) during self-assembly or during substrate inspection, thereby assembling the assembly area 510 and the inspection area of the assembly chamber 500. Fluids contained in 520 are isolated from each other. The gate 530 separates the assembly region from the inspection region, thereby preventing the semiconductor light emitting device from moving to the inspection region during the self-assembly, thereby preventing the inspection of the substrate.

When the substrate S is transferred, as shown in FIG. 23, the gate 530 is lowered (second state) to remove the boundary between the assembly area 510 and the inspection area 520. Through this, the substrate chuck 200 may transfer the substrate from the assembly area 510 to the inspection area 520 only by horizontal movement without any vertical.

Meanwhile, a sonic generator may be disposed in the assembly area 510 to prevent aggregation of semiconductor light emitting devices. The sonic generator may prevent the plurality of semiconductor light emitting devices from agglomerating with each other through vibration.

Meanwhile, bottom surfaces of the assembly area 510 and the inspection area 520 may be made of a light transmissive material. In an embodiment, referring to FIG. 20, light transmission areas 511 and 512 may be provided on the bottom surfaces of the assembly area 510 and the inspection area 520, respectively. Through this, the present invention enables to monitor the substrate during the self-assembly, or to perform the inspection on the substrate. It is preferable that the area of the said light transmission area | region is larger than the area of the assembly surface of a board | substrate. However, the present invention is not limited thereto, and the assembly chamber may be configured to perform self-assembly and inspection at the same location.

By using the substrate chuck 200, the magnetic field forming unit 300, and the assembly chamber 500 described above, the self-assembly described with reference to FIGS. 8A to 8E can be performed. Hereinafter, a detailed structure and method for solving the problems caused during self-assembly will be described in detail.

First, the structure and method for solving the most critical problems that occur during self-assembly will be described. Specifically, the area of the assembly board increases as the area of the display increases. As the area of the assembly board increases, the warpage of the board increases. When the self-assembly is performed while the assembly board is bent, since the magnetic field is not uniformly formed on the surface of the assembly board, self-assembly is difficult to be performed stably.

24 is a conceptual diagram illustrating a substrate warpage phenomenon generated during self-assembly.

Referring to FIG. 24, when the substrate S maintains a flat state during self-assembly, the distance between the plurality of magnets 313 and the substrate S may be uniform. In this case, the magnetic field may be uniformly formed on the assembly surface of the substrate. However, when actually loading the substrate on the substrate chuck 200, the substrate is bent due to gravity. Since the space between the plurality of magnets 313 and the substrate S 'is not uniform, it is difficult to uniformly assemble the substrate S' in a bent state. Since the magnetic field forming portion is disposed on the upper side of the substrate, it is difficult to arrange a separate mechanism for correcting the warpage of the substrate on the upper side of the substrate. In addition, when a separate mechanism for correcting the warpage of the substrate is disposed below the substrate, it is possible to limit the movement of the semiconductor light emitting devices, a problem that the mechanism obscures a part of the assembly surface. For this reason, it is difficult to arrange a mechanism for correcting warpage of the substrate either above or below the substrate.

The present invention provides a structure and method of a substrate chuck for correcting warpage of the substrate.

25 is a conceptual diagram illustrating a method for correcting warpage of a substrate.

Referring to FIG. 25, after loading the substrate S 'onto the substrate chuck 200, when the assembly surface of the substrate faces the gravity direction, the substrate S' is bent. At least one of the first and second frames 210 and 220 provided in the substrate chuck applies pressure to all four corners of the rectangular substrate in order to minimize bending of the substrate when the substrate is loaded. Nevertheless, when the area of the substrate S 'is large, the substrate is forced to be bent due to gravity.

As shown in the second picture of FIG. 25, after the substrate chuck 200 is moved to the assembly position, the substrate S 'comes into contact with the fluid F when the substrate chuck 200 is lowered by a certain distance. When the substrate S 'is simply in contact with the fluid F, the warpage of the substrate S' is not corrected. Although self-assembly may be performed in the state shown in the second figure of FIG. 25, uniform self-assembly is difficult to be achieved.

The present invention further lowers the substrate chuck 200 while the substrate S 'is in contact with the fluid F in order to correct the warpage of the substrate. At this time, the sealing part 212 provided in the first frame 210 prevents the fluid F from entering the window of the first frame. In addition, the side wall portion 210 ″ provided in the first frame 210 prevents the fluid F from flowing over the first frame to the opposite surface of the assembly surface of the substrate S ′.

Here, the sealing part 212 should be formed to surround all the edges of the substrate. In addition, the height of the side wall portion 210 ″ must be greater than the maximum descending depth based on the state in which the first frame 210 is in contact with the fluid F. FIG. That is, when the substrate chuck 200 descends, the fluid should not penetrate beyond the window and the side wall portion 210 ″ of the first frame 210.

Due to the sealing portion 212 and the side wall portion 210 ″ described above, when the substrate chuck 200 descends, the surface of the fluid F rises. At this time, the buoyancy due to the fluid (F) acts on the substrate (S '). As the surface rising width of the fluid F increases, the buoyancy force acting on the substrate S 'increases.

The present invention measures the degree of bending of the substrate (S '), by adjusting the falling width of the substrate chuck 200 according to the degree of bending of the substrate, so that the buoyancy acting on the substrate is changed. When an appropriate buoyancy is applied to the substrate, as shown in the third figure of FIG. 25, the substrate is kept flat (S).

The magnetic field forming unit 300 is transferred to the upper side of the substrate (S) in a state in which buoyancy is applied to the substrate (S), and then performs horizontal movement along the substrate (S). At this time, the power of the power supply unit 171 is applied to the assembly electrode (161c) through the electrode connector 213. That is, self-assembly proceeds in a state where buoyancy is applied to the assembly surface of the substrate (S).

According to the above, it is possible to correct the warpage phenomenon of the substrate without having to arrange a separate structure on the upper and lower sides of the substrate. Through this, the present invention allows to achieve a high self-assembly yield even when the area of the assembly substrate is large.

On the other hand, the present invention allows the self-assembly can be made in the assembly board as close to the plane as possible. In addition, the present invention minimizes the factors that interfere with self-assembly by controlling the movement of the substrate chuck and prevents the semiconductor light emitting device from being separated from the assembly substrate after self-assembly is completed.

To this end, the controller 172 described in FIG. 7 controls the movement of the substrate chuck. Specifically, the controller 172 is configured to control the movement of the vertical and horizontal moving parts and the rotating part provided in the substrate chuck 200. Meanwhile, the vertical moving part may be configured to vertically move the entire substrate chuck, and at least one of the first and second frames 210 and 220 and the fixing part 230 may be relatively perpendicular to the other components. Can be made to move. In the present specification, the control of the substrate chuck to vertically move the substrate includes not only the meaning of vertically moving the entire substrate chuck, but also the first and second frames 210 and 220 and the fixing unit 230. At least one of) may include the meaning that the relative movement relative to the remaining configuration.

For example, the control of the substrate chuck so that the controller 172 lowers the substrate may include not only lowering the entire substrate chuck, but also the first and second frames 210 and 220 and the fixing unit 230. It means to lower at least one. This may vary depending on the structure of the substrate chuck and is not limited thereto.

Hereinafter, the substrate chuck control method of the controller for applying buoyancy to the substrate described with reference to FIG. 25 will be described in detail.

The controller 172 controls the depth at which the substrate is immersed in the fluid based on the degree of warpage of the substrate. To this end, the present invention further includes a displacement sensor for sensing the degree of warpage of the substrate. In detail, the displacement sensor is configured to sense a distance between the sensor and the measurement target point. Since the displacement sensor utilizes well-known equipment, a detailed description thereof will be omitted.

The displacement sensor may be disposed on any one of the first and second frames 210 and 220 and the fixing unit 230 provided in the substrate chuck, and may be configured to change its position by a separate moving means. .

The displacement sensor senses a vertical distance between the displacement sensor and a point of the substrate above the substrate. Specifically, the displacement sensor moves on a point of the substrate, and then senses the distance between the displacement sensor and the substrate. The displacement sensor then moves onto another point on the substrate and then measures the distance between the other point and the displacement sensor. In this case, the displacement sensor must move horizontally with respect to the reference plane and sense the distance. Since the reference plane to which the displacement sensor is moved is fixed, measuring the distance between each of the plurality of points on the substrate and the displacement sensor can determine the degree of warpage of the substrate.

For example, a displacement sensor disposed above the substrate measures the distance to each of the edge and the center of the substrate. When the substrate is bent in the direction of gravity, the vertical distance between one point of the substrate edge and the displacement sensor is smaller than the vertical distance between one point of the substrate center and the displacement sensor.

The reference height may be set by the user, and the distance measured by the displacement sensor may be converted to the reference value reference. For example, the reference value may be defined as the distance between the assembly surface edge and the displacement sensor. The measurement point for calculating the reference value may be set by the user.

When the distance value measured from the displacement sensor is converted by using the reference value, it may be used as a measure (hereinafter, referred to as a warpage value) indicating an absolute degree of warpage of the substrate. The warpage value may be calculated as in Equation 1 below.

[Equation 1]

Bending value = reference value-distance value measured by displacement sensor

According to Equation 1, when the bending value has a positive value, it can be seen that the substrate is bent in a direction opposite to gravity. In addition, when the warpage value has a negative value, it can be seen that the substrate is bent in the direction of gravity. The controller 172 may determine whether the substrate is raised or lowered according to the sign of the bending value.

In one embodiment, the displacement sensor senses the distance between each of the 25 points on the substrate and the displacement sensor. Thereafter, the controller 172 may convert the sensed values into a warpage value and control the vertical moving distance and the vertical moving direction of the substrate based on the maximum and minimum values of the 25 warpage values. Specifically, when the absolute value of the maximum value among the 25 bending values is greater than the absolute value of the minimum value, the controller 172 determines that the substrate is bent in the opposite direction to gravity as a whole, and controls the substrate chuck to raise the substrate. On the contrary, when the absolute value of the minimum value among the 25 bending values is greater than the absolute value of the maximum value, the controller 172 determines that the substrate is bent in the gravity direction as a whole, and controls the substrate chuck to lower the substrate.

Since the greater the depth of the substrate submerged in the fluid, the greater the magnitude of buoyancy acting on the substrate, the greater the bending value of the substrate, the greater the vertical displacement distance of the substrate. In an embodiment, when the absolute value of the maximum value among the 25 warpage values is greater than the absolute value of the minimum value, the controller 172 determines the rising distance of the substrate in proportion to the absolute value of the maximum value. In contrast, the controller 172 determines the falling distance of the substrate in proportion to the absolute value of the minimum value when the absolute value of the minimum value among the 25 bending values is greater than the absolute value of the maximum value.

The controller 172 may immerse the substrate in the fluid by a predetermined depth, and then measure the bending degree of the substrate by the displacement sensor. Thereafter, the controller 172 determines whether to raise or lower the substrate according to the re-measurement result. In one embodiment, the controller 172 may repeat the above process until at least one of the maximum value and the minimum value of the bending value is within a predetermined value.

In another embodiment, the controller 172 may determine the depth at which the substrate is locked based on experimental data on the substrate. Specifically, before the substrate is submerged in the fluid, the bending degree of the substrate is sensed by the displacement sensor while lowering the substrate by a predetermined distance. Even after the substrate is submerged in the fluid, the bending degree of the substrate is sensed by the displacement sensor while the substrate is lowered by a predetermined distance. By repeating this sensing, it is possible to calculate the correlation between the submerged depth of the substrate and the amount of warpage variation of the substrate. This experiment can be carried out for each type of substrate.

When the specific type of substrate is used for self-assembly, the control unit 172 senses the degree of warpage of the specific type of substrate, and then submerges the fluid in the substrate based on the sensing result and the experimental data for the specific type of substrate. Calculate the depth. Thereafter, the controller 172 controls the substrate chuck so that the substrate is submerged in the fluid by the calculated depth. According to the above-described method, since the bending degree of the substrate does not need to be sensed repeatedly, the process time can be shortened.

Meanwhile, the warpage correction result of the substrate may be utilized for warpage correction of another substrate. Specifically, referring to FIG. 26, the present invention locks the substrate to a predetermined depth according to the above-described experimental data, and then measures the warpage degree of the substrate again.

At this time, the present invention is selected whether to measure the degree of warpage of the entire substrate, or only a part of the substrate through the input unit provided in the control unit 172 (S201).

Subsequently, a target position as a displacement measurement target and a reference position (reference value calculation target position) serving as a reference for the degree of warpage of the substrate are respectively input (S202 to S204).

Thereafter, the controller 172 moves the displacement sensor to a preset measurement position (S205). The displacement sensor senses the distance between the displacement sensor and the substrate (S206). Thereafter, the controller 172 moves the displacement sensor to the next measurement position (S207). Whenever the measurement of the displacement sensor is finished, the controller 172 determines whether sensing of all target positions designated by the user is terminated (S208), and when the sensing is not finished, transfers the displacement sensor to the next measurement position.

When sensing of all target positions is completed, the controller 172 converts the sensing value into a warpage value and determines whether at least one of the maximum value and the minimum value of the warpage value is within a preset range.

When the warpage values are within a preset range, the control unit 172 displays the measurement result in an output unit separately provided (S211), and updates the experimental data for controlling the substrate chuck during warpage correction of the corresponding board (S212). This is used to correct the warpage of other substrates.

On the other hand, when the difference value is out of the predetermined range, the controller 172 raises or lowers the substrate (S210) according to the sensing result, and repeats S205.

Meanwhile, the controller 172 may control the substrate chuck so that the step of contacting the substrate with the fluid and the step of allowing the substrate to be submerged in the fluid are performed step by step. Bubbles may remain on the surface of the substrate while the substrate is in contact with the fluid. The controller 172 performs a control to minimize the bubbles until the substrate is in contact with the fluid, and controls the buoyancy force to the substrate after the substrate is completely in contact with the fluid.

Specifically, the control unit 172 may lower the substrate chuck so that the assembly surface of the substrate is in contact with the fluid, and then further lower the substrate chuck while the assembly surface of the substrate is in contact with the fluid. .

The controller 172 may vary a speed of lowering the substrate until the entire assembly surface of the substrate contacts the fluid and a speed of lowering the substrate when the substrate is further lowered.

In one embodiment, the controller 172 is a substrate chuck so that the rate of lowering the substrate until the entire assembly surface of the substrate is in contact with the fluid is less than the rate of lowering the substrate chuck when further lowering the substrate Can be controlled. In this way, the controller 172 secures sufficient time for the bubble to escape to the edge of the substrate while the substrate is in contact with the fluid.

Additionally, the present invention makes contact with the substrate at an angle to the fluid when contacting the substrate with the fluid to minimize bubbles formed between the substrate and the fluid. To this end, the controller 172 controls the vertical moving unit and the rotating unit provided in the substrate chuck in the process of contacting the substrate with the fluid.

In detail, the controller 172 controls the vertical moving unit until one end of the assembly surface contacts the fluid while the assembly surface of the substrate is disposed obliquely with the surface of the fluid. After the lowering, one end of the assembly surface is in contact with the fluid, the rotating portion is controlled to sequentially contact the fluid along the one direction. Accordingly, the assembly surface of the substrate is in contact with the fluid at an angle. In this process, bubbles formed between the substrate and the fluid are pushed to the edge of the substrate and finally pushed out of the substrate. Through this, the present invention minimizes the bubbles formed between the substrate and the fluid.

Thereafter, the controller 172 controls the vertical moving unit to further lower the substrate.

As described above, the controller 172 minimizes bubbles formed between the substrate and the fluid by contacting the substrate at an angle to the fluid in the process of lowering the substrate into the fluid.

The controller 172 controls the movement of the substrate chuck to prevent the semiconductor light emitting devices from being separated from the substrate after the self-assembly is finished. Specifically, after the self-assembly is completed, the substrate should be separated from the fluid, which may cause a problem that the semiconductor light emitting device is separated from the substrate due to the surface energy between the fluid and the semiconductor light emitting elements during the substrate is separated from the fluid. .

In order to prevent such a problem, after the self-assembly of the controller 172 is completed, the substrate chuck in a state of being submerged in the fluid is raised to a predetermined height, and then the substrate chuck is additionally detached from the fluid. Can be raised. Here, the predetermined height is preferably up to the surface height of the fluid.

The controller 172 may differently control the speed of raising the substrate to the predetermined height and the speed of further raising the substrate. In one embodiment, the control unit 172 ascends the substrate to the surface height of the fluid at a high speed, and then leaves the substrate at a relatively slow speed. In this way, the present invention prevents the assembled semiconductor light emitting device from being separated from the substrate in the process of leaving the substrate from the fluid.

In addition, the controller 172 raises the substrate to a predetermined height, and then drives the vertical moving unit and the rotating unit so that the assembly surface of the substrate is obliquely separated from the fluid. Specifically, the controller 172 raises the substrate to a predetermined height, and then controls the rotating unit so that the assembly surface is sequentially separated from the fluid in one direction.

In this case, the controller 172 may control the rotation speed of the rotating unit to vary with time. In detail, the controller 172 may increase the rotation speed of the rotating unit as time passes so that the substrate may be quickly separated from the fluid.

As described above, the present invention prevents the preassembled semiconductor light emitting device from being separated from the substrate in the process of detaching the substrate from the fluid after the self-assembly is completed.

Claims (10)

An assembly chamber having a space for receiving the fluid;
A magnetic field forming unit having a plurality of magnets for applying magnetic force to the semiconductor light emitting devices dispersed in the fluid and a horizontal moving unit for changing the positions of the magnets so that the semiconductor light emitting devices move in the fluid;
A substrate support part configured to support a substrate having an assembly electrode, a vertical moving part for lowering the substrate so that one surface of the substrate is in contact with the fluid in a state in which the substrate is supported, and the semiconductor light emitting devices are changed by the position change of the magnets; A substrate chuck having an electrode connection part configured to generate an electric field by applying power to the assembly electrode so as to be seated at a predetermined position of the substrate during the movement; And
A control unit for controlling the movement of the magnetic field forming unit and the substrate chuck,
The control unit,
And a depth at which the substrate is immersed in the fluid, based on the degree of warpage of the substrate. The method of claim 1,
Further comprising a displacement sensor for sensing the degree of warp of the substrate,
The control unit,
And a depth at which the substrate is submerged in the fluid based on a sensing result of the displacement sensor. The method of claim 1,
The control unit,
After lowering the substrate so that the assembly surface of the substrate is in contact with the fluid,
And the substrate is further lowered while the assembly surface of the substrate is in contact with the fluid. The method of claim 3,
The substrate chuck,
A rotating part for rotating the substrate support part;
The control unit,
When the assembly surface of the substrate is lowered so that the substrate is in contact with the fluid, the vertical moving portion and the rotating unit is driven so that the assembly surface of the substrate is in contact with the fluid at an oblique angle. Self-assembled device. The method of claim 4, wherein
The control unit,
With the assembly surface of the substrate disposed obliquely to the surface of the fluid,
The vertical moving part is controlled to lower the substrate until one end of the assembly surface contacts the fluid,
After the one end of the assembly surface in contact with the fluid, the self-assembly device of the semiconductor light emitting device, characterized in that for controlling the rotating unit to sequentially contact the fluid in one direction. The method of claim 5,
The control unit,
And the substrate is lowered by controlling the vertical moving part after the entire assembly surface contacts the fluid. The method of claim 4, wherein
The control unit,
After the semiconductor light emitting devices are seated in the predetermined position, after raising the substrate to a predetermined height, the substrate is further raised so that the assembly surface of the substrate is separated from the fluid. Self-assembled device. The method of claim 7, wherein
The control unit,
And raising the substrate to a predetermined height and then driving the vertical moving part and the rotating part so that the assembly surface of the substrate is obliquely separated from the fluid. The method of claim 8,
The control unit,
After raising the substrate to a predetermined height, the self-assembly device of the semiconductor light emitting device, characterized in that for controlling the rotation unit so that the assembly surface is sequentially separated from the fluid in one direction. The method of claim 9,
The control unit,
Self-assembling device of a semiconductor light emitting device, characterized in that for controlling the rotation unit so that the assembly surface is separated from the fluid sequentially in one direction, so that the rotational speed of the rotation unit varies with time.

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