KR20200018981A - Apparatus for controlling temperature of substrate, apparatus for treating substrate comprising the same and method for treating substrate - Google Patents

Abstract

Disclosed is a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space therein; a gas supply unit supplying gas to the chamber; plasma power applying RF power for generating plasma from the gas supplied to the chamber; a support plate positioned in the chamber and supporting the substrate; a plurality of heating units installed in an area different from each other of the support plate to heat the substrate; and a control part controlling the plurality of heating units and controlling the substrate at predetermined temperature, wherein the control part includes: a plurality of controllers respectively corresponding to one of a plurality of process steps; and a switching part switching one of the plurality of controllers so that one of the plurality of controllers controls the plurality of heating units in accordance with a process performed in the chamber.

Description

Substrate temperature control device, substrate processing apparatus and substrate processing method including the same {APPARATUS FOR CONTROLLING TEMPERATURE OF SUBSTRATE, APPARATUS FOR TREATING SUBSTRATE COMPRISING THE SAME AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate temperature control apparatus, a substrate processing apparatus including the same, and a substrate processing method, and more particularly, to a substrate temperature control apparatus for controlling a temperature of a substrate for each region, a substrate processing apparatus including the same, and a substrate processing method. It is about.

There is a need for a substrate temperature control device for controlling the temperature of a substrate in a semiconductor manufacturing process. In particular, in the etching process, it is important to control the temperature of the substrate, and the temperature of the electrostatic chuck supporting the substrate is greatly influenced by external factors such as chucking and etching.

Conventionally, the temperature of the substrate is controlled by using a controller for a plurality of regions of the substrate, but factors affecting the temperature of the electrostatic chuck are different for each process step, so it is difficult to design a controller suitable for all process steps. there was. For example, when the controller is designed considering only the RF power that affects the temperature of the electrostatic chuck, there is a problem that it takes a long time to switch to a steady state in the chucking step due to a large gain value.

Therefore, there is a need for a technology capable of performing more precise temperature control in all regions of the substrate by designing a controller in consideration of factors influencing the temperature of the electrostatic chuck at every process step.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate temperature control device capable of performing precise temperature control in all regions of a substrate by switching a controller suitable for each process step, a substrate processing apparatus including the same, and a substrate processing method.

A substrate processing apparatus according to an embodiment of the present invention for achieving the above object, in the apparatus for processing a substrate, a chamber having a processing space therein, a gas supply unit for supplying gas to the chamber, to the chamber A plasma power supply for applying RF power for generating plasma from the supplied gas, a support plate positioned in the chamber to support the substrate, a plurality of heating units installed in different regions of the support plate to heat the substrate, and the plurality of heatings And a controller configured to control a unit to control the substrate to a predetermined temperature, wherein the controller includes a plurality of controllers corresponding to any one of a plurality of process steps and a process performed in the chamber. Either one includes a switching unit for switching to control the plurality of heating units.

Here, the plurality of process steps may include at least one of a chucking step, an etching step, and a de-chucking step.

Here, the controller corresponding to the chucking step among the plurality of controllers may be a controller which is converted into a stable state within a predetermined time after the chucking voltage is applied to the support plate.

In addition, the controller corresponding to the dechucking step among the plurality of controllers may be a controller which is converted into a stable state within a predetermined time after the chucking voltage is removed from the support plate.

In addition, the controller corresponding to the etching step of the plurality of controllers may be a controller for controlling the plurality of heating units based on the plasma generated in the chamber.

On the other hand, the substrate temperature control apparatus according to an embodiment of the present invention, in the apparatus for controlling the temperature of the substrate, a plurality of heating is provided in a different region of the support plate for supporting the substrate, the support plate is heated And a controller configured to control the substrate and the plurality of heating units to control the substrate to a predetermined temperature, wherein the controller includes a plurality of controllers corresponding to any one of a plurality of process steps and a process performed on the substrate. Accordingly, any one of the plurality of controllers includes a switching unit for switching to control the plurality of heating units.

Here, the plurality of process steps may include at least one of a chucking step, an etching step, and a de-chucking step.

Here, the controller corresponding to the chucking step among the plurality of controllers may be a controller which is converted into a stable state within a predetermined time after the chucking voltage is applied to the support plate.

In addition, the controller corresponding to the dechucking step among the plurality of controllers may be a controller which is converted into a stable state within a predetermined time after the chucking voltage is removed from the support plate.

In addition, the controller corresponding to the etching step of the plurality of controllers may be a controller for controlling the plurality of heating units based on the plasma supplied to the substrate.

On the other hand, the substrate processing method according to an embodiment of the present invention, according to a process performed in a chamber having a processing space for processing a substrate, which controls a plurality of heating units for heating the substrate of a plurality of controllers Selecting one controller and controlling the plurality of heating units using the selected controller, the plurality of controllers corresponding to any one of a plurality of process steps, respectively.

Here, the plurality of process steps may include at least one of a chucking step, an etching step, and a de-chucking step.

Herein, the controller corresponding to the chucking step of the plurality of controllers may be a controller which is converted into a stable state within a predetermined time after the chucking voltage is applied to the support plate supporting the substrate.

In addition, the controller corresponding to the dechucking step among the plurality of controllers may be a controller which is converted into a stable state within a predetermined time after the chucking voltage is removed from the support plate supporting the substrate.

In addition, the controller corresponding to the etching step of the plurality of controllers may be a controller for controlling the plurality of heating units based on the plasma generated in the chamber.

According to various embodiments of the present disclosure as described above, by controlling a plurality of controllers corresponding to a plurality of process steps, the temperature of the substrate may be controlled using a controller suitable for each process step, and thus, more precisely. Temperature control for each region of the substrate may be performed.

The effects of the present invention are not limited to the effects described above. Effects that are not mentioned will be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
2 is a view for explaining a method of switching a plurality of controllers according to an embodiment of the present invention in comparison with the prior art.
3 is a diagram for describing a plurality of controllers used in a plurality of process steps according to an exemplary embodiment.
4 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Other advantages and features of the present invention, and a method of achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims.

If not defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly accepted by universal techniques in the prior art to which this invention belongs. Terms defined by general dictionaries may be interpreted as having the same meaning as in the related description and / or text of the present application, and are not conceptualized or overly formal, even if not expressly defined herein. Will not. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, the term 'comprises' and / or the various uses of the verb, for example, 'comprises', 'comprising', 'comprising', 'comprising', and the like may refer to compositions, ingredients, components, The steps, operations and / or elements do not exclude the presence or addition of one or more other compositions, components, components, steps, operations and / or elements. Also, 'have' and 'have' should be interpreted in the same way.

According to the present invention, by controlling a plurality of heating units using a controller suitable for each process step by switching a plurality of controllers respectively corresponding to a plurality of process steps, temperature control of a plurality of regions of the substrate can be performed more precisely. Can be. That is, since a plurality of heating units are conventionally controlled using only one controller, it is difficult to control the temperature of the substrate according to external factors in each process step. However, the substrate processing apparatus according to the present invention corresponds to each process step. Switching on multiple controllers solves this problem.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 processes the substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate (W). The substrate processing apparatus 10 may include a chamber 100, a substrate support assembly 200, a shower head 300, and a gas supply unit 400.

The chamber 100 may provide a processing space in which a substrate processing process is performed. The chamber 100 has a processing space therein and may be provided in a sealed shape. The chamber 100 may be provided with a metal material. According to one embodiment, the chamber 100 may be provided of aluminum material. Chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber 100. The exhaust hole 102 may be connected to the exhaust line 151. Reaction by-products generated during the process and the gas remaining in the internal space of the chamber may be discharged to the outside through the exhaust line (151). The interior of the chamber 100 may be reduced to a predetermined pressure by the exhaust process.

In an example, the liner 130 may be provided inside the chamber 100. The liner 130 may have a cylindrical shape with open top and bottom surfaces. The liner 130 may be provided to contact the inner side of the chamber 100. The liner 130 may protect the inner wall of the chamber 100 to prevent the inner wall of the chamber 100 from being damaged by arc discharge. In addition, impurities generated during the substrate processing process may be prevented from being deposited on the inner wall of the chamber 100. Optionally, liner 130 may not be provided.

The support plate 200 may be located inside the chamber 100. The support plate 200 may support the substrate (W). The support plate 200 may include an electrostatic chuck 210 that absorbs the substrate W by using electrostatic force. Specifically, when a voltage is applied to the electrostatic chuck 210, an electrostatic force acts on the electrostatic chuck 210, thereby adsorbing the substrate W to the electrostatic chuck 210. Alternatively, the support plate 200 may support the substrate W in various ways such as mechanical clamping. Hereinafter, the supporting plate 200 including the electrostatic chuck 210 will be described.

The substrate support assembly 200 may include an electrostatic chuck 210, a bottom cover 250, and a plate 270. The substrate support assembly 200 is positioned to be spaced apart from the bottom of the chamber 100 in the chamber 100.

The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and a focus ring 240. The electrostatic chuck 210 may support the substrate (W).

The dielectric plate 220 may be located at the top of the electrostatic chuck 210. The dielectric plate 220 may be provided as a disc-shaped dielectric substance. The substrate W may be disposed on an upper surface of the dielectric plate 220. The top surface of the dielectric plate 220 may have a radius smaller than that of the substrate (W). An edge region of the substrate W may be located outside the dielectric plate 220.

The dielectric plate 220 may include a first electrode 223, a heater 225, and a first supply flow path 221 therein. The first supply passage 221 may be provided from the top surface of the dielectric plate 210 to the bottom surface. A plurality of first supply flow paths 221 may be formed to be spaced apart from each other, and may be provided as a passage through which a heat transfer medium is supplied to the bottom of the substrate W.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be installed between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by ON / OFF of the switch 223b. When the switch 223b is turned on, a direct current may be applied to the first electrode 223. An electrostatic force acts between the first electrode 223 and the substrate W by a current applied to the first electrode 223, and the substrate W may be absorbed by the dielectric plate 220 by the electrostatic force.

The heating unit 225 may be located under the first electrode 223. The heating unit 225 may be electrically connected to the second power source 225a. The heating unit 225 may generate heat by resisting a current applied from a power source. The generated heat may be transferred to the substrate W through the dielectric plate 220. The substrate W may be maintained at a predetermined temperature by the heat generated by the heating unit 225. The heating unit 225 may include a spiral coil. The heating unit 225 may be provided in plural to correspond to each region of the substrate W in order to control the temperature of each region of the substrate W. FIG.

The body 230 may be positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the body 230 may be bonded by the bonding unit 236. The body 230 may be provided of aluminum material. The upper surface of the body 230 may be stepped so that the central area is positioned higher than the edge area. The upper center area of the body 230 may have an area corresponding to the bottom of the dielectric plate 220, and may be bonded to the bottom of the dielectric plate 220. The body 230 may have a first circulation passage 231, a second circulation passage 232, and a second supply passage 233 therein.

The first circulation passage 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation channel 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation channel 231 may be disposed such that ring-shaped channels having different radii have the same center. Each of the first circulation passages 231 may communicate with each other. The first circulation passages 231 may be formed at the same height.

The second circulation passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation channel 232 may be formed in a spiral shape inside the body 230. Alternatively, the second circulation flow path 232 may be arranged such that ring-shaped flow paths having different radii have the same center. Each second circulation flow path 232 may be in communication with each other. The second circulation passage 232 may have a larger cross-sectional area than the first circulation passage 231. The second circulation passages 232 may be formed at the same height. The second circulation passage 232 may be located below the first circulation passage 231.

The second supply flow path 233 may extend upward from the first circulation flow path 231 and may be provided as an upper surface of the body 230. The second supply flow path 243 may be provided in a number corresponding to the first supply flow path 221, and may connect the first circulation flow path 231 and the first supply flow path 221.

The first circulation passage 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium storage unit 231a may store a heat transfer medium. The heat transfer medium may comprise an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. The helium gas may be supplied to the first circulation channel 231 through the supply line 231b, and may be sequentially supplied to the bottom surface of the substrate W through the second supply channel 233 and the first supply channel 221. Can be. The helium gas serves as a medium for transferring heat transferred from the plasma to the substrate W to the electrostatic chuck 210.

The second circulation passage 232 may be connected to the cooling fluid storage unit 232a through the cooling fluid supply line 232c. Cooling fluid may be stored in the cooling fluid storage unit 232a. The cooler 232b may be provided in the cooling fluid reservoir 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, cooler 232b may be installed on cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c may circulate along the second circulation passage 232 and cool the body 230. As the body 230 is cooled, the dielectric plate 220 and the substrate W may be cooled together to maintain the substrate W at a predetermined temperature.

Body 230 may include a metal plate. In one example, the entire body 230 may be provided as a metal plate. The body 230 may be electrically connected to the third power source 235a. The first power source 235a may be provided as a high frequency power source generating high frequency power. The high frequency power source may be provided as an RF power source. The body 230 may receive high frequency power from the first power source 235a. As a result, the body 230 may function as an electrode.

The shower head unit 300 includes a shower head 310, a gas jet plate 320, and a support 330. The shower head 310 is spaced apart from the upper surface of the chamber 100 by a predetermined distance. The upper surface of the gas injection plate 310 and the chamber 100 is formed a constant space therebetween. The shower head 310 may be provided in a plate shape having a constant thickness. The bottom surface of the shower head 310 may be anodized to prevent arc generation by plasma. The cross section of the shower head 310 may be provided to have the same shape and cross-sectional area as the support plate 200. The shower head 310 includes a plurality of injection holes 311. The injection hole 311 penetrates the upper and lower surfaces of the shower head 310 in the vertical direction. The shower head 310 includes a metal material.

The shower head 310 may be electrically connected to the fourth power source 351. The fourth power source 351 may be provided as a high frequency power source. Alternatively, the shower head 310 may be electrically grounded. The shower head 310 may be electrically connected to the second power source 351 or grounded to serve as an electrode.

The gas supply unit 400 supplies a process gas into the chamber 100. The gas supply unit 400 includes a gas feeder 410, a gas supply pipe 420, and a gas storage unit 430. The gas feeder 410 is installed at the center of the upper surface of the chamber 100. Process gas is supplied from the gas feeder 410 into the chamber 100.

The control unit 700 controls the plurality of heating units 225 to control the substrate to a predetermined temperature. For example, the controller 700 supplies power to the plurality of heating units 225 when the temperature of the substrate is lower than the preset temperature, and powers the plurality of heating units 225 when the temperature of the substrate is higher than the preset temperature. To block. As another example, the controller 700 measures the temperature of each region of the substrate, and when the temperature of each region of the substrate is lower than the preset temperature, supplies the power to the heating unit 225 corresponding to the region, and the temperature of the region of the substrate. When is higher than the predetermined temperature may cut off the power supplied to the heating unit 225 corresponding to the area.

Hereinafter, a method of controlling a plurality of heating units by controlling a plurality of controllers by the controller of the present invention will be described with reference to FIG. 2.

As shown in FIG. 2 (a), unlike the conventional control of a plurality of heating units using one controller, the control unit 700 according to an embodiment of the present invention, as shown in FIG. 720 controls the plurality of heating units 225 by switching the plurality of controllers 711, 712, 713, 714 respectively corresponding to any one of the plurality of process steps. In detail, the switching unit 720 determines a process step performed in the chamber 100, and includes a controller corresponding to a process step currently performed in the chamber 100 among the plurality of controllers 711, 712, 713, and 714. By selecting 711, 712, 713, 714, the selected controller 711, 712, 713, 714 can switch to control the plurality of heating units 225. For example, the plurality of process steps may be any one of a chucking step, an etching step, and a de-chucking step, and include a first of the plurality of controllers 711, 712, 713, and 714. The controller 711 may correspond to the chucking step, the second controller 712 and the third controller 713 may correspond to the etching step, and the fourth controller 714 may correspond to the dechucking step. Here, the second and third controllers 712 and 713 corresponding to the etching step may correspond to the second controller 712 when the RF power source for generating the plasma is a source and a bias RF. In this case, the third controller 713 may correspond. However, the present invention is not limited thereto, and the plurality of controllers 711, 712, 713, and 714 may be provided as two or three controllers or may be configured as five or more controllers. Process may be included.

3 is a diagram for describing a plurality of controllers used in a plurality of process steps according to an exemplary embodiment.

In order to describe the controllers 711, 712, 713, and 714 according to an embodiment of the present disclosure, a plurality of process steps may include a chucking step 810, an etching step 820, and a dechucking step 830. It explains. However, the present invention is not limited thereto and may be implemented by a plurality of controllers corresponding to various process steps.

First, referring to FIG. 3, the first controller 711 may correspond to the chucking step 810. The first controller 711 may be configured as a controller that can be converted into a steady state within a predetermined time after the chucking voltage is applied to the support plate 200. That is, in the chucking step 810, a high voltage is applied to the support plate 200 so that a sufficient clamping force is provided to the substrate during the process, and the etching process proceeds after the chucking of the substrate is completed, thereby switching to a stable state within a short time. Should be. Accordingly, when the first controller 711 is configured as a controller that can be converted to a stable state within a predetermined time after the chucking voltage (high voltage) is applied, the process efficiency can be improved. For example, the preset time may be 1ms to 10ms, but is not limited thereto and may be adjusted by a user to correspond to each process.

The second controller 712 and the third controller 713 may be controllers that control the plurality of heating units 225 based on the plasma generated in the chamber 100. Specifically, when the plasma is generated in the chamber 100 in the etching step 820, since the generated plasma may affect the temperature of the substrate, the plurality of heating units 225 may be removed in consideration of the influence of the generated plasma. A controller for controlling can be designed. In addition, when the RF power is applied by the plasma power supply, since the temperature change characteristic of the substrate varies according to whether the source RF or the bias RF is applied, the second controller 712 may include the chamber 100 when the RF power source is the source RF. May be a controller that controls the plurality of heating units 225 based on the plasma in the plurality of heating units. The third controller 713 may include a plurality of heating units based on the plasma in the chamber 100 when the RF power source is a bias RF. 225 may be a controller for controlling. Accordingly, the second controller 712 and the third controller 713 of the present invention control the plurality of heating units 225 in consideration of the plasma effect in the chamber 100, thereby performing temperature control of the substrate more precisely. Can be.

The fourth controller 714 may be a controller which is converted into a stable state within a predetermined time after the chucking voltage supplied to the support plate 200 is removed. That is, in the dechucking step 830, since the voltage for maintaining the clamping force is removed, the fourth controller 714 may be quickly changed to a stable state until the next substrate is input. After removal, the controller may be configured to switch to a stable state within a predetermined time. For example, the preset time may be 1ms to 10ms, but is not limited thereto and may be adjusted by a user to correspond to each process. Accordingly, when the dechucking process of the substrate is in progress, the fourth controller 714 switches to a stable state within a short time so that the next substrate can be introduced, thereby improving process efficiency.

4 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 4, when the target temperature of the electrostatic chuck (substrate) is set (S410) for controlling the temperature of the substrate, it is determined whether to switch the controller by determining a process step currently performed in the chamber (S420). do. Specifically, if there is a change in the process step (S420, Y), change to the controller corresponding to the current process step (S430), if there is no change in the process step (S420, N), the controller connected to a plurality of heating units The temperature control of the substrate is performed by using.

Here, the temperature control of the substrate measures the temperature of the current electrostatic chuck (substrate) (S440), calculates an error between the set target temperature and the measured temperature (S450), and if the target temperature is higher than the measured temperature (S450). , +), The substrate is heated by supplying power to the plurality of heating units, and when the target temperature is lower than the measured temperature (S450,-), the substrate is cooled by cutting off the power supplied to the plurality of heating units. Thereafter, the process of measuring the temperature of the electrostatic chuck (substrate) and heating or cooling the substrate by supplying or cutting off power to the plurality of heating units may be repeatedly performed until the measurement temperature and the target temperature coincide.

According to various embodiments of the present disclosure as described above, by controlling a plurality of controllers corresponding to a plurality of process steps, the temperature of the substrate may be controlled using a controller suitable for each process step, and thus, more precisely. Temperature control for each region of the substrate may be performed.

The substrate processing method as described above may be implemented as a computer-executable program and executed in an application form or stored in a computer-readable recording medium. Here, the computer-readable recording medium may include volatile memory such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), read only memory (ROM), programmable ROM (PROM), and electrically programmable ROM (EPROM). , Non-volatile memory such as electrically erasable and programmable ROM (EEPROM), flash memory devices, phase-change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), ferroelectric RAM (FRAM), floppy disks, hard disks Alternatively, the present invention may be a storage medium in the form of an optical reading medium (eg, CD-ROM, DVD, etc.), but is not limited thereto.

The above embodiments are presented to aid the understanding of the present invention, and do not limit the scope of the present invention, from which it should be understood that various modifications are within the scope of the present invention. The technical protection scope of the present invention should be defined by the technical spirit of the claims, and the technical protection scope of the present invention is not limited to the literary description of the claims, but the scope of the technical equivalents is substantially equal. It should be understood that the invention extends to.

10: substrate processing apparatus 100: chamber
200: support plate 225: heating unit
700: control unit 710: controller
720: switching unit

Claims (15)

In the apparatus for processing a substrate,
A chamber having a processing space therein;
A gas supply unit supplying gas to the chamber;
A plasma power supply for applying RF power for generating plasma from the gas supplied to the chamber;
A support plate located in the chamber and supporting a substrate;
A plurality of heating units installed in different regions of the support plate to heat the substrate; And
And a controller configured to control the plurality of heating units to control the substrate to a predetermined temperature.
The control unit,
A plurality of controllers each corresponding to any one of a plurality of process steps; And
And a switching unit configured to switch any one of the plurality of controllers to control the plurality of heating units, according to a process performed in the chamber. The method of claim 1,
The plurality of process steps,
A substrate processing apparatus comprising at least one of a chucking step, an etching step, and a de-chucking step. The method of claim 2,
The controller corresponding to the chucking step of the plurality of controllers,
And a controller which switches to a steady state within a predetermined time after a chucking voltage is applied to the support plate. The method of claim 2,
The controller corresponding to the dechucking step of the plurality of controllers,
And a controller which is converted into a stable state within a predetermined time after the chucking voltage is removed from the support plate. The method of claim 2,
The controller corresponding to the etching step of the plurality of controllers,
And a controller that controls the plurality of heating units based on the plasma generated in the chamber. In the apparatus for controlling the temperature of the substrate,
A support plate for supporting the substrate;
A plurality of heating units installed in different regions of the support plate to heat the substrate; And
And a controller configured to control the plurality of heating units to control the substrate to a predetermined temperature.
The control unit,
A plurality of controllers each corresponding to any one of a plurality of process steps; And
And a switching unit configured to switch one of the plurality of controllers to control the plurality of heating units, according to a process performed on the substrate. The method of claim 6,
The plurality of process steps,
A substrate temperature control device comprising at least one of a chucking step, an etching step, and a de-chucking step. The method of claim 7, wherein
The controller corresponding to the chucking step of the plurality of controllers,
And a controller for converting to a steady state within a predetermined time after a chucking voltage is applied to the support plate. The method of claim 7, wherein
The controller corresponding to the dechucking step of the plurality of controllers,
And a controller for converting to a stable state within a predetermined time after the chucking voltage is removed from the support plate. The method of claim 7, wherein
The controller corresponding to the etching step of the plurality of controllers,
And a controller for controlling the plurality of heating units based on the plasma supplied to the substrate. In the method of processing a substrate,
Selecting, according to a process performed in a chamber having a processing space for processing a substrate, one of the plurality of controllers for controlling a plurality of heating units for heating the substrate; And
Controlling the plurality of heating units using the selected controller;
The plurality of controllers respectively correspond to any one of a plurality of process steps. The method of claim 11,
The plurality of process steps,
A substrate processing method comprising at least one of a chucking step, an etching step, and a de-chucking step. The method of claim 12,
The controller corresponding to the chucking step of the plurality of controllers,
And a controller which switches to a steady state within a predetermined time after a chucking voltage is applied to the support plate supporting the substrate. The method of claim 12,
The controller corresponding to the dechucking step of the plurality of controllers,
And a controller which switches to a stable state within a predetermined time after the chucking voltage is removed from the support plate supporting the substrate. The method of claim 12,
The controller corresponding to the etching step of the plurality of controllers,
And a controller for controlling the plurality of heating units based on the plasma generated in the chamber.

Images