KR102223765B1 - Apparatus and method for treating substrate - Google Patents

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus includes: a chamber having a space for processing a substrate therein, a substrate support unit located in the chamber and including a support plate for supporting a substrate, a gas supply unit for supplying gas into the chamber, and a gas in the chamber in a plasma state. A plasma generating unit excited by the furnace and a temperature control unit for controlling the temperature of the substrate, wherein the temperature control unit includes a heating member including a first heater and a second heater installed on the support plate to heat the substrate, and power to the heating member And a control member for controlling the power supply to supply power and the power of the power source to be supplied to the second heater when there is an abnormality in the first heater.

Description

Substrate processing apparatus and substrate processing method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method for controlling the temperature of each region of the substrate.

Since the semiconductor process is very sensitive to temperature, it is very important to control the temperature of the substrate in the semiconductor process. In a substrate processing apparatus in which a semiconductor process is performed, an electrostatic chuck on which a substrate is placed includes a plurality of heaters that control the temperature of the substrate so that the temperature is uniform in all regions of the substrate. Here, a plurality of heaters are controlled by a plurality of switches. When several switches connected to the plurality of heaters are simultaneously closed, current may flow back to other heaters. Accordingly, a rectifier diode is installed between the switch and the heater to prevent the current from flowing backward, and the temperature is uniformly controlled in all regions of the substrate through precise heater control, thereby increasing the process yield.

In addition, since a number of heaters are integrally manufactured with the electrostatic chuck, even if a problem occurs in one heater, the electrostatic chuck has to be replaced. That is, since the operation of opening the chamber and replacing the electrostatic chuck has to be performed due to a heater failure of one of the numerous multi-zone heaters, there is a problem that the cost increases and the work time increases.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method including an extra spare heater.

In addition, the present invention can detect an abnormality in the heater and automatically control the temperature of the substrate by the spare heater.

A substrate processing apparatus according to an embodiment of the present invention for achieving the above object is an apparatus for processing a substrate, a chamber having a space for processing a substrate therein, located in the chamber, and supporting the substrate. A substrate support unit including a support plate, a gas supply unit supplying gas into the chamber, a plasma generating unit that excites the gas in the chamber into a plasma state, and a temperature control unit controlling a temperature of the substrate, wherein the temperature The control unit includes a heating member including a first heater and a second heater installed on the support plate to heat the substrate, a power supply supplying power to the heating member, and power of the power supply when there is an abnormality in the first heater And a control member that controls to be supplied to the second heater.

Here, the first heater and the second heater may be disposed to heat the same area on the substrate.

Here, the first heater and the second heater may be provided at different heights within the support plate.

Here, the first heater and the second heater may be disposed at positions overlapping each other when viewed from above.

Here, the control member may include an operational amplifier (OP-AMP) and a first transistor.

Here, the first transistor is a PMOS transistor, and in the operational amplifier, an input part is connected to one end of the first heater and an output part is connected to a gate of the first transistor. And a drain may be connected to one end of the second heater.

In addition, the temperature control unit may further include a driving notification member that displays whether or not the heating member is driven.

Here, the driving notification member may include a second transistor, a switching device, a first light emitting device, and a second light emitting device.

Here, in the second transistor, a gate is connected to an output of the operational amplifier, a source and a drain are connected to the switching element, and the switching element is controlled by the second transistor to be controlled by the first light emitting element or the Electric power may be supplied to the second light emitting device.

Here, the switching element may be a relay coil, and the first light-emitting element and the second light-emitting element may be LED elements.

Here, the driving notification member may include a plurality of diodes.

In addition, the power source may be a DC power source.

On the other hand, in the substrate processing method according to an embodiment of the present invention, in the method of processing a substrate, a first heater provided in a support plate supporting a substrate or a first heater disposed in a different position from the first heater in the support plate 2 The substrate is heated using a heater, and when there is an abnormality in the first heater, power supplied to the first heater is controlled to be supplied to the second heater.

Here, the first heater and the second heater may be disposed to heat the same area on the substrate.

Here, the first heater and the second heater are provided at different heights within the support plate, and may be disposed at positions overlapping each other when viewed from above.

Here, the power is controlled by a control member having one end connected to the first heater and the other end connected to the second heater, and the control member may include an operational amplifier and a first transistor.

Here, the first transistor is a PMOS transistor, and in the operational amplifier, an input unit is connected to one end of the first heater and an output unit is connected to a gate of the first transistor to determine whether the first heater is abnormal. The first transistor may supply the power to the first heater or the second heater by having a source connected to a power source and a drain connected to one end of the second heater.

In addition, whether the first heater and the second heater are driven may be displayed.

Here, whether the driving notification member has one end connected to the operational amplifier indicates whether or not the driving notification member is driven, and the driving notification member may include a second transistor, a switching device, a first light-emitting device, and a second light-emitting device.

Here, the second transistor has a gate connected to the operational amplifier and a source and a drain connected to the switching element to control the switching element, and the switching element is the first light emitting element or the second light emitting element By supplying power to the device, whether or not the first heater and the second heater are driven may be displayed.

According to the various embodiments of the present disclosure as described above, even if an abnormality occurs in the heater, it is not necessary to replace the electrostatic chuck, so that the replacement cost and operation time can be reduced.

In addition, the present invention allows the operator to easily grasp the area where the abnormality occurred in the heater.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.
2 is a view showing a temperature control unit according to an embodiment of the present invention.
3 is a view showing a temperature control unit according to another embodiment of the present invention.
4 is a diagram illustrating a case in which a plurality of heating members are provided according to an embodiment of the present invention.
5 is a graph showing changes in current flowing through a plurality of heating members according to an embodiment of the present invention.
6 is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention.

Other advantages and features of the present invention, and a method of achieving them will become apparent with reference to embodiments to be described later in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. It is provided to completely inform the scope of the invention to the possessor, and the invention is only defined by the scope of the claims.

Even if not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by universal technology in the prior art to which this invention belongs. Terms defined by general dictionaries may be construed as having the same meaning as the related description and/or the text of this application, and not conceptualized or excessively formalized, even if not clearly defined herein. Won't.

The terms used in this specification are for describing exemplary embodiments and are not intended to limit the present invention. In this specification, the singular form also includes the plural form unless specifically stated in the phrase. As used in the specification,'include' and/or various conjugated forms of this verb, for example,'include','include','include','include', etc. refer to the mentioned composition, ingredient, component, Steps, operations and/or elements do not exclude the presence or addition of one or more other compositions, components, components, steps, operations and/or elements. In the present specification, the term'and/or' refers to each of the listed components or various combinations thereof.

1 is a diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 processes a substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. The substrate processing apparatus 10 includes a chamber 620, a substrate support unit 200, a shower head 300, a gas supply unit 400, a baffle unit 500, a plasma generation unit 600, and a temperature control unit 70. ) Can be included.

The chamber 620 may provide a processing space in which a substrate processing process is performed. The chamber 620 may have a processing space therein and may be provided in a sealed shape. The chamber 620 may be made of a metal material or may be made of an aluminum material. Also, the chamber 620 may be grounded. An exhaust hole 102 may be formed on the bottom surface of the chamber 620. The exhaust hole 102 may be connected to the exhaust line 151. The reaction by-products generated during the process and gas remaining in the internal space of the chamber may be discharged to the outside through the exhaust line 151. The interior of the chamber 620 may be reduced to a predetermined pressure by the exhaust process.

According to an embodiment of the present invention, a liner 130 may be provided inside the chamber 620. The liner 130 may have a cylindrical shape with open upper and lower surfaces. The liner 130 may be provided to contact the inner surface of the chamber 620. The liner 130 may protect the inner wall of the chamber 620 to prevent damage to the inner wall of the chamber 620 due to arc discharge. In addition, it is possible to prevent impurities generated during the substrate processing process from being deposited on the inner wall of the chamber 620. Optionally, the liner 130 may not be provided.

The substrate support unit 200 may be located inside the chamber 620. The substrate support unit 200 may support the substrate W. The substrate support unit 200 may include an electrostatic chuck 210 that adsorbs the substrate W using electrostatic force. Alternatively, the substrate support unit 200 may support the substrate W in various ways such as mechanical clamping. Hereinafter, the substrate support unit 200 including the electrostatic chuck 210 will be described.

The substrate support unit 200 may include an electrostatic chuck 210, a lower cover 250 and a plate 270. The substrate support unit 200 may be located inside the chamber 620 to be spaced apart from the bottom surface of the chamber 620 to the top.

The electrostatic chuck 210 may include a dielectric plate 220, a body 230 and a focus ring 240. The electrostatic chuck 210 may support the substrate W. The dielectric plate 220 may be positioned on the top of the electrostatic chuck 210. The dielectric plate 220 may be provided with a disk-shaped dielectric substance. A substrate W may be placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 may have a radius smaller than that of the substrate W. Therefore, the edge region of the substrate W may be located outside the dielectric plate 220.

The dielectric plate 220 may include a first electrode 223, a heating member 225, and a first supply passage 221 therein. The first supply passage 221 may be provided from an upper surface to a lower surface of the dielectric plate 210. A plurality of first supply passages 221 may be formed to be spaced apart from each other, and may be provided as passages through which a heat transfer medium is supplied to the bottom surface of the substrate W.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be installed between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by ON/OFF of the switch 223b. When the switch 223b is turned on, a direct current may be applied to the first electrode 223. Electrostatic force acts between the first electrode 223 and the substrate W by the current applied to the first electrode 223, and the substrate W may be adsorbed to the dielectric plate 220 by the electrostatic force.

The heating member 225 may be positioned under the first electrode 223. The heating member 225 may be electrically connected to the second power source 225a. The second power source 225a may be a DC power source. The heating member 225 may generate heat by resisting the current applied from the second power source 225a. The generated heat may be transferred to the substrate W through the dielectric plate 220. The substrate W may be maintained at a predetermined temperature by the heat generated by the heating member 225. The heating member 225 may include a spiral-shaped coil. In addition, a plurality of heating members 225 may be installed in different regions of the dielectric plate 220.

The body 230 may be positioned under the dielectric plate 220. The lower surface of the dielectric plate 220 and the upper surface of the body 230 may be bonded by an adhesive 236. The body 230 may be made of an aluminum material. The upper surface of the body 230 may be positioned such that the center region is positioned higher than the edge region. The central region of the upper surface of the body 230 has an area corresponding to the lower surface of the dielectric plate 220 and may be adhered to the lower surface of the dielectric plate 220. The body 230 may have a first circulation passage 231, a second circulation passage 232, and a second supply passage 233 formed therein.

The first circulation passage 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation passage 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation flow path 231 may be arranged such that ring-shaped flow paths having different radii from each other have the same center. Each of the first circulation passages 231 may communicate with each other. The first circulation passages 231 may be formed at the same height.

The second circulation passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation passage 232 may be formed in a spiral shape inside the body 230. Alternatively, the second circulation passage 232 may be arranged so that ring-shaped passages having different radii from each other have the same center. Each of the second circulation passages 232 may communicate with each other. The second circulation passage 232 may have a larger cross-sectional area than the first circulation passage 231. The second circulation passages 232 may be formed at the same height. The second circulation passage 232 may be located under the first circulation passage 231.

The second supply passage 233 extends upward from the first circulation passage 231 and may be provided as an upper surface of the body 230. The second supply passage 243 is provided in a number corresponding to the first supply passage 221, and may connect the first circulation passage 231 and the first supply passage 221.

The first circulation passage 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium may be stored in the heat transfer medium storage unit 231a. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. The helium gas is supplied to the first circulation passage 231 through the supply line 231b, and may be supplied to the bottom of the substrate W through the second supply passage 233 and the first supply passage 221 in sequence. . The helium gas may serve as a medium through which heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 210.

The second circulation passage 232 may be connected to the cooling fluid storage unit 232a through the cooling fluid supply line 232c. The cooling fluid may be stored in the cooling fluid storage unit 232a. A cooler 232b may be provided in the cooling fluid storage unit 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c may circulate along the second circulation passage 232 to cool the body 230. As the body 230 is cooled, the dielectric plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The body 230 may include a metal plate. According to an example, the entire body 230 may be provided as a metal plate.

The focus ring 240 may be disposed in an edge region of the electrostatic chuck 210. The focus ring 240 has a ring shape and may be disposed along the circumference of the dielectric plate 220. The upper surface of the focus ring 240 may be positioned such that the outer portion 240a is higher than the inner portion 240b. The inner portion 240b of the upper surface of the focus ring 240 may be positioned at the same height as the upper surface of the dielectric plate 220. The inner portion 240b of the upper surface of the focus ring 240 may support an edge region of the substrate W positioned outside the dielectric plate 220. The outer portion 240a of the focus ring 240 may be provided to surround the edge region of the substrate W. The focus ring 240 may control the electromagnetic field so that the plasma density is uniformly distributed over the entire area of the substrate W. Accordingly, plasma is uniformly formed over the entire area of the substrate W, so that each area of the substrate W can be uniformly etched.

The lower cover 250 may be located at the lower end of the substrate support unit 200. The lower cover 250 may be positioned to be spaced apart from the bottom surface of the chamber 620 to the top. The lower cover 250 may have a space 255 with an open top surface formed therein. The outer radius of the lower cover 250 may be provided with the same length as the outer radius of the body 230. In the inner space 255 of the lower cover 250, a lift pin module (not shown) for moving the conveyed substrate W from an external conveying member to the electrostatic chuck 210 may be located. The lift pin module (not shown) may be positioned at a predetermined interval from the lower cover 250. The bottom surface of the lower cover 250 may be made of a metal material. Air may be provided in the inner space 255 of the lower cover 250. Since air has a lower dielectric constant than an insulator, it may serve to reduce an electromagnetic field inside the substrate support unit 200.

The lower cover 250 may have a connection member 253. The connection member 253 may connect the outer surface of the lower cover 250 and the inner wall of the chamber 620. A plurality of connection members 253 may be provided on the outer surface of the lower cover 250 at regular intervals. The connection member 253 may support the substrate support unit 200 inside the chamber 620. In addition, the connection member 253 may be connected to the inner wall of the chamber 620 so that the lower cover 250 may be electrically grounded. A first power line 223c connected to the first power source 223a, a second power line 225c connected to the second power source 225a, and a heat transfer medium supply line 231b connected to the heat transfer medium storage unit 231a In addition, the cooling fluid supply line 232c connected to the cooling fluid storage unit 232a may extend into the lower cover 250 through the inner space 255 of the connection member 253.

A plate 270 may be positioned between the electrostatic chuck 210 and the lower cover 250. The plate 270 may cover the upper surface of the lower cover 250. The plate 270 may be provided with a cross-sectional area corresponding to the body 230. The plate 270 may include an insulator. According to an example, one or more plates 270 may be provided. The plate 270 may serve to increase the electrical distance between the body 230 and the lower cover 250.

The shower head 300 may be located above the substrate support unit 200 in the chamber 620. The shower head 300 may be positioned to face the substrate support unit 200.

The shower head 300 may include a gas distribution plate 310 and a support part 330. The gas distribution plate 310 may be positioned at a predetermined distance from the upper surface of the chamber 620 to the lower portion. A certain space may be formed between the gas distribution plate 310 and the upper surface of the chamber 620. The gas distribution plate 310 may be provided in a plate shape having a constant thickness. The bottom surface of the gas distribution plate 310 may be anodized in order to prevent arcing due to plasma. The cross-section of the gas distribution plate 310 may be provided to have the same shape and cross-sectional area as the substrate support unit 200. The gas distribution plate 310 may include a plurality of injection holes 311. The injection hole 311 may penetrate the upper and lower surfaces of the gas distribution plate 310 in a vertical direction. The gas distribution plate 310 may include a metal material. The support part 330 may support a side part of the gas distribution plate 310. The upper end of the support part 330 may be connected to the upper surface of the chamber 620, and the lower end may be connected to the side part of the gas distribution plate 310. The support part 330 may include a non-metal material.

The gas supply unit 400 may supply process gas into the chamber 620. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 may be installed in the center of the upper surface of the chamber 620. An injection hole may be formed at the bottom of the gas supply nozzle 410. The injection port may supply a process gas into the chamber 620. The gas supply line 420 may connect the gas supply nozzle 410 and the gas storage unit 430. The gas supply line 420 may supply the process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 may be installed in the gas supply line 420. The valve 421 opens and closes the gas supply line 420 and may adjust the flow rate of the process gas supplied through the gas supply line 420.

The baffle unit 500 may be positioned between the inner wall of the chamber 620 and the substrate support unit 200. The baffle 510 may be provided in an annular ring shape. A plurality of through holes 511 may be formed in the baffle 510. The process gas provided in the chamber 620 may pass through the through holes 511 of the baffle 510 and be exhausted to the exhaust hole 102. The flow of the process gas may be controlled according to the shape of the baffle 510 and the shape of the through holes 511.

The plasma generation unit 600 may excite the process gas in the chamber 620 into a plasma state. According to an embodiment of the present invention, the plasma generating unit 600 may be configured as an inductively coupled plasma (ICP) type. In this case, as shown in FIG. 1, the plasma generating unit 600 includes a high frequency power supply 610 that supplies high frequency power, a first coil 621 and a second coil electrically connected to the high frequency power to receive high frequency power. It may include a coil 622.

The first coil 621 and the second coil 622 may be disposed at positions facing the substrate W. For example, the first coil 621 and the second coil 622 may be installed above the chamber 620. The diameter of the first coil 621 is smaller than the diameter of the second coil 622 and is located inside the upper portion of the chamber 620, and the second coil 622 may be located outside the upper portion of the chamber 620. The first coil 621 and the second coil 622 receive high-frequency power from the high-frequency power source 610 to induce a time-varying magnetic field in the chamber, and accordingly, the process gas supplied to the chamber 620 is excited as plasma. Can be. Hereinafter, a process of processing a substrate using the substrate processing apparatus described above will be described.

When the substrate W is placed on the substrate support unit 200, a direct current may be applied from the first power source 223a to the first electrode 223. Electrostatic force acts between the first electrode 223 and the substrate W by the direct current applied to the first electrode 223, and the substrate W may be adsorbed to the electrostatic chuck 210 by the electrostatic force. When the substrate W is adsorbed on the electrostatic chuck 210, the process gas may be supplied into the chamber 620 through the gas supply nozzle 410. The process gas may be uniformly injected into the inner region of the chamber 620 through the injection hole 311 of the shower head 300. The high-frequency power generated by the high-frequency power source may be applied to the plasma source, thereby generating electromagnetic force in the chamber 620. The electromagnetic force may excite the process gas between the substrate support unit 200 and the shower head 300 with plasma. Plasma is provided as the substrate W to process the substrate W. Plasma may perform an etching process.

The temperature control unit 70 may control the temperature of each region of the substrate by controlling power applied to the heating member 225. The temperature control unit 700 may include a plurality of heaters for each region.

Referring to FIG. 2, the temperature control unit 70 includes a heating member 225, a power source 225a, and a control member 700. The control member 700 may include an operational amplifier 710 and a first transistor 720. The control member 700 detects whether the first heater 225-1 among the plurality of heating members 225 is abnormal, and when there is an abnormality in the first heater 225-1, the power of the power source 225a is reduced. 2 It can be controlled to be supplied to the heater (225-2). Accordingly, when there is an abnormality in the first heater 225-1 that controls the temperature in one area of the substrate, the temperature can be controlled by the second heater 225-1 instead of the first heater 225-1. , It is possible to solve the defect of the heater without replacing the electrostatic chuck 210.

Specifically, a plurality of heaters 225-1 and 225-2 may be provided for each region of the electrostatic chuck 210. The first heater 225-1 and the second heater 225-2 may be disposed to heat the same area on the substrate. The first heater 225-1 and the second heater 225-2 may be provided at different heights within the electrostatic chuck 210. The first heater 225-1 and the second heater 225-2 may be disposed at positions overlapping each other when viewed from the top. The control member 700 may provide power from the power source 225a to the first heater 225-1 or the second heater 225-2. The control member 700 may have an input part connected to the first heater 225-1 and an output part connected to the gate of the first transistor 720. The first transistor 720 may have a source connected to the power source 225a and a drain connected to the second heater 225-2. The first transistor 720 may be a PMOS transistor. For example, when the first heater 225-1 is in a normal state, a current is applied to the input of the operational amplifier 710 and a positive voltage is output to the output to be applied to the gate of the first transistor 720. Accordingly, since current does not flow between the source and the drain of the first transistor 720, the second heater 225-2 does not operate. As another example, when there is an abnormality in the first heater 225-1, current is not applied to the input of the operational amplifier 710, and a negative voltage is output to the output to be applied to the gate of the first transistor 720. Accordingly, since a current flows between the source and the drain of the first transistor 720, the second heater 225-2 operates. That is, the control member 700 of the present invention is composed of an operational amplifier 710 and a first transistor 720 to detect whether the first heater 225-1 is abnormal, and the first heater 225-1 When there is an abnormality, the second heater 225-2 is operated, so that even when a heater failure occurs, control for each region of the substrate can be smoothly performed without replacing the electrostatic chuck 210.

In addition, referring to FIG. 3, the temperature control unit 70 according to an embodiment of the present invention may further include a driving notification member 800. The driving notification member 800 may display whether the heating member 225 is driven. Specifically, the driving notification member 800 includes a second transistor 810, a switching device 820, a first light emitting device 830, and a second light emitting device 840. The second transistor 810 may have a gate connected to the output of the operational amplifier 710 and a source and a drain connected to the switching element 820. A voltage may be applied to the source of the second transistor 810. The second transistor 810 may be a PMOS transistor. The switching element 820 is connected to the first light emitting element 830 and the second light emitting element 840 to apply a voltage to the first light emitting element 830 or the second light emitting element 840. The switching element 820 may be a relay coil. The first light emitting device 830 and the second light emitting device 840 may be LED devices.

For example, when the first heater 225-1 is in a normal state, a current is applied to the input unit of the operational amplifier 710 and a positive voltage is output to the output unit. Since a positive voltage is applied to the gate of the second transistor 810, current does not flow between the source and the drain of the second transistor 810. In this case, since the switching element 820 does not perform a switching operation, a voltage is applied to the first light emitting element 830 to operate the first light emitting element 830. As another example, when there is an abnormality in the first heater 225-2, current is not applied to the input unit of the operational amplifier 810 and a negative voltage is output to the output unit. Since a negative voltage is applied to the gate of the second transistor 810, a current flows between the source and the drain of the second transistor 810, and the switching element 820 performs a switching operation. Accordingly, a voltage is applied to the second light-emitting device 840 to operate the second light-emitting device 840. That is, when the first heater 225-1 operates to heat the substrate by the first heater 225-1, the first light emitting element 830 operates, and the second heater 225-2 When the substrate is heated by, the second light-emitting element 840 operates, so the operator can know which heater operates according to whether the first light-emitting element 830 or the second light-emitting element 840 emits light. Accordingly, it is possible to easily identify a region in which a defect has occurred in the heater.

In addition, the driving notification member 800 may include a plurality of diodes 801 and 802. Specifically, diodes 801 and 802 are provided between the first light emitting element 830 and the second light emitting element 840 and the switching member 820, respectively, to prevent the current from flowing back to the switching member 820. have.

In addition, the temperature control unit 70 according to an embodiment of the present invention is provided in a plurality of regions, respectively, as shown in FIG. 4, so that temperature control for each region of the substrate may be performed. That is, a plurality of heaters are provided for each region of the substrate, and when there is an abnormality in the first heater, the second heater may be automatically operated to perform temperature control of the corresponding region.

5 is a graph showing changes in current flowing through a plurality of heating members according to an embodiment of the present invention. Referring to FIG. 5, when current flows through the first heater (green line), no current flows through the second heater (red line), and when no current flows through the first heater, it can be confirmed that the current flows through the second heater. have.

6 is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention.

Referring to FIG. 6, first, a substrate is heated using a first heater provided in the support plate or a second heater disposed in a different position from the first heater in the support plate (S610). In this case, the first heater and the second heater may be disposed to heat the same area on the substrate. In addition, the first heater and the second heater are provided at different heights within the support plate, and may be disposed at positions overlapping each other when viewed from above.

Subsequently, when there is an abnormality in the first heater, the power supplied to the first heater is controlled to be supplied to the second heater (S620). Also, whether or not the first heater and the second heater are driven may be displayed. Specifically, it is possible to display whether the first heater and the second heater are driven by allowing the first light emitting device or the second light emitting device to operate.

According to various embodiments of the present invention as described above, a plurality of heaters for heating the same area of the substrate are disposed for each area of the substrate, and when there is an abnormality in the first heater, the heating operation of the corresponding area is performed by the second heater. can do. Accordingly, even if a heater failure occurs, since the electrostatic chuck may not be replaced, replacement cost and operation time may be reduced.

In addition, according to the present invention, an operator can easily grasp a region of a substrate on which another heater operates because an abnormality occurs in the heater.

The substrate processing method as described above can be implemented as a program that can be executed by a computer and executed in the form of an application, and can be stored in a computer-readable recording medium.

The computer-readable recording medium includes volatile memories such as SRAM (Static RAM), DRAM (Dynamic RAM), SDRAM (Synchronous DRAM), etc., Read Only Memory (ROM), Programmable ROM (PROM), Erasable Programmable ROM (EPROM), Nonvolatile memory such as EEPROM (Electrically Erasable Programmable ROM), flash memory device, PRAM (Phase-change RAM), MRAM (Magnetic RAM), RRAM (Resistive RAM), FRAM (Ferroelectric RAM), floppy disk, hard disk, or optical The reading medium may be, for example, a storage medium such as a CD-ROM or a DVD, but is not limited thereto.

It should be understood that the above embodiments have been presented to aid understanding of the present invention, and do not limit the scope of the present invention, and various deformable embodiments may also fall within the scope of the present invention. For example, each component shown in the exemplary embodiment of the present invention may be distributed and implemented, and conversely, several distributed components may be combined and implemented. Therefore, the technical protection scope of the present invention should be determined by the technical idea of the claims, and the technical protection scope of the present invention is not limited to the literal description of the claims itself, but substantially equals technical value. It should be understood that it extends to one category of inventions.

10: substrate processing apparatus 70: temperature control unit
200: substrate support unit 225: heating member
400: gas supply unit 600: plasma generating unit
700: control member 710: operational amplifier
720: first transistor 800: driving notification member
810: second transistor 820: switching member
830: first light-emitting member 840: second light-emitting member

Claims (20)

In the apparatus for processing a substrate,
A chamber having a space for processing a substrate therein;
A substrate support unit located in the chamber and including a support plate supporting the substrate;
A gas supply unit supplying gas into the chamber;
A plasma generating unit that excites the gas in the chamber into a plasma state; And
Including; a temperature control unit for controlling the temperature of the substrate,
The temperature control unit,
A heating member installed on the support plate and including a first heater and a second heater for heating the substrate;
A power supply for supplying electric power to the heating member; And
And a control member configured to control the power of the power source to be supplied to the second heater when there is an abnormality in the first heater. The method of claim 1,
The first heater and the second heater are disposed to heat the same area on the substrate. The method of claim 2,
The first heater and the second heater are provided at different heights within the support plate. The method of claim 3,
The first heater and the second heater are disposed at positions overlapping each other when viewed from above. The method of claim 4,
The control member includes an operational amplifier (OP-AMP) and a first transistor. The method of claim 5,
The first transistor is a PMOS transistor,
In the operational amplifier, an input part is connected to one end of the first heater and an output part is connected to a gate of the first transistor,
The first transistor has a source connected to the power source and a drain connected to one end of the second heater. The method of claim 5,
The temperature control unit,
A substrate processing apparatus further comprising a driving notification member that displays whether or not the heating member is driven. The method of claim 7,
The drive notification member includes a second transistor, a switching element, a first light-emitting element, and a second light-emitting element. The method of claim 8,
In the second transistor, a gate is connected to an output of the operational amplifier, a source and a drain are connected to the switching element,
The switching element is controlled by the second transistor to supply power to the first light emitting element or the second light emitting element. The method of claim 9,
The switching element is a relay coil,
The first light-emitting element and the second light-emitting element are LED elements. The method of claim 10,
The drive notification member includes a plurality of diodes. The method according to any one of claims 1 to 11,
The power supply is a DC power supply. In the method of processing a substrate,
Heating the substrate using a first heater provided in a support plate supporting the substrate or a second heater disposed in a different position from the first heater in the support plate,
When there is an abnormality in the first heater, the substrate processing method of controlling the power supplied to the first heater to be supplied to the second heater. The method of claim 13,
The first heater and the second heater are disposed to heat the same area on the substrate. The method of claim 14,
The first heater and the second heater are provided at different heights within the support plate, and are disposed at positions overlapping each other when viewed from above. The method of claim 15,
The power is controlled by a control member having one end connected to the first heater and the other end connected to the second heater,
The control member includes an operational amplifier and a first transistor. The method of claim 16,
The first transistor is a PMOS transistor,
In the operational amplifier, an input part is connected to one end of the first heater and an output part is connected to a gate of the first transistor to determine whether the first heater is abnormal,
The first transistor has a source connected to a power source supplying the power and a drain connected to one end of the second heater to supply the power to the first heater or the second heater. The method of claim 16,
A substrate processing method for indicating whether the first heater and the second heater are driven. The method of claim 18,
Whether the driving is displayed by a driving notification member connected to the operational amplifier at one end,
The driving notification member includes a second transistor, a switching element, a first light-emitting element, and a second light-emitting element. The method of claim 19,
The second transistor has a gate connected to the operational amplifier and a source and a drain connected to the switching element to control the switching element,
The switching element supplies power to the first light emitting element or the second light emitting element to display whether the first heater and the second heater are driven.

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