KR20200016428A - Gas supplying system for ALD - Google Patents

Gas supplying system for ALD Download PDF

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KR20200016428A
KR20200016428A KR1020180091533A KR20180091533A KR20200016428A KR 20200016428 A KR20200016428 A KR 20200016428A KR 1020180091533 A KR1020180091533 A KR 1020180091533A KR 20180091533 A KR20180091533 A KR 20180091533A KR 20200016428 A KR20200016428 A KR 20200016428A
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precursor
inert gas
head
atomization unit
canister
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KR1020180091533A
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Korean (ko)
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최경현
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제주대학교 산학협력단
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Publication of KR20200016428A publication Critical patent/KR20200016428A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a gas supply system for an atomic layer deposition device, capable of controlling a flow rate while maintaining a constant molecular weight to be injected. To this end, according to the present invention, the gas supply system comprises: a canister in which a liquid precursor is accommodated; an inert gas injection pipe inserted into the canister to inject an inert gas; a precursor discharge pipe transferring a precursor discharged by the pressure of the inert gas toward a head; an atomization unit which vaporizes the precursor transported by the precursor discharge pipe and, at the same time, controls a flow rate; and a head injection tube which transfers the precursor vaporized by the atomization unit to the head. Therefore, according to the present invention, the injection amount and the injection speed of the inert gas, the precursor and the reaction gas injected into the head can be adjusted as desired, thereby achieving precise injection.

Description

원자층 증착장치용 가스 공급시스템{Gas supplying system for ALD}Gas supplying system for atomic layer deposition equipment

본 발명은 원자층 증착장치용 가스 공급시스템에 관한 것이며, 구체적으로 분사되는 분자량을 일정하게 유지하면서 유동속도를 제어할 수 있는 원자층 증착장치용 가스 공급시스템에 관한 것이다.The present invention relates to a gas supply system for an atomic layer deposition apparatus, and more particularly to a gas supply system for an atomic layer deposition apparatus that can control the flow rate while maintaining a constant molecular weight injected.

기판이나 웨이퍼에 박막을 증착시키는 방법으로 원자층 증착(ALD)방법이 있다. 원자층 증착방법은 반응원료를 각각 분리, 공급하여 반응가스 간 화학반응으로 형성된 입자를 기판이나 웨이퍼 표면에 증착하여 박막을 형성시키는 방법이다. 이러한 원자층 증착방법을 이용하면 미세한 박막두께 조절이 가능한 장점이 있다.Atomic layer deposition (ALD) is a method of depositing a thin film on a substrate or a wafer. The atomic layer deposition method is a method of forming a thin film by separating and supplying a reaction raw material and depositing particles formed by chemical reaction between reaction gases on a substrate or a wafer surface. Using such an atomic layer deposition method has an advantage in that fine film thickness can be controlled.

원자층 증착장치는 헤드에서 불활성기체, 전구체 및 반응가스 등이 아래에 있는 기판으로 분사되어 한층한층 증착되게 된다. 이때, 분사되는 가스의 양 및 분사속도가 적절히 제어되어야 양질의 박막을 얻을 수 있다.In the atomic layer deposition apparatus, an inert gas, a precursor, a reaction gas, and the like are injected from a head to a substrate under which it is further deposited. At this time, the amount of the gas to be injected and the injection speed must be properly controlled to obtain a high quality thin film.

도 1에 나타낸 등록특허공보 제10-1764959호를 참조하면, 전구체 저장소(6)에는 반응챔버(1)내로 이송시킬 전구체가 저장되어 있고, 전구체 저장소(6)에서는 전구체를 소정의 온도까지 가열하여 증발시킨다. Referring to Korean Patent Publication No. 10-1764959 shown in FIG. 1, the precursor reservoir 6 stores a precursor to be transferred into the reaction chamber 1, and the precursor reservoir 6 heats the precursor to a predetermined temperature. Evaporate.

또한, 불활성 가스 공급기(2)에서는 불활성 가스를 전구체 저장소 또는 반응챔버로 전송하여 준다. 이때, 불활성 가스는 가스유량제어기(mass flow controller;4,5)를 통해 유량이 제어된다.In addition, the inert gas supplier 2 transmits the inert gas to the precursor reservoir or the reaction chamber. In this case, the flow rate of the inert gas is controlled through a gas flow controller (mass flow controller) 4,5.

상기 전구체 저장소로 들어간 불활성 가스는 전구체와 혼합되어 전구가스가 된다. 이렇게 혼합된 전구가스는 반응챔버 내로 주입된다.The inert gas entering the precursor reservoir is mixed with the precursor to form a precursor gas. The mixed precursor gas is injected into the reaction chamber.

하지만, 이러한 방식의 원자층 증착장치는 전구체의 유량 및 속도제어가 힘들어 헤드 내로 원하는 만큼의 적정한 양과 속도로 분사시키기가 어려운 문제점이 있다.However, the atomic layer deposition apparatus of this type has a problem that it is difficult to control the flow rate and speed of the precursor is difficult to spray the appropriate amount and speed as desired into the head.

즉, 많은 에너지를 가해 기화되는 전구체의 양을 많게 하면 그만큼 유동속도도 빨라져 헤드 내에서 너무 빠른 속도로 분사되고, 기화되는 전구체의 양을 적게 하면 그만큼 유동속도도 느려져 헤드 내에서 너무 느린 속도로 분사되는 문제점이 있다.In other words, if the amount of precursor to be vaporized by applying a lot of energy increases, the flow rate is also increased so that it is injected in the head too fast, and if the amount of precursor to be vaporized is too small, the flow rate is slowed and the spray is too slow in the head. There is a problem.

본 발명은 상기한 문제점을 해결하기 위한 것이며, 전구체 및 반응가스의 분사량을 일정하게 제어하면서 동시에 분사속도를 정밀하게 제어할 수 있는 원자층 증착장치용 가스 공급시스템을 제공하기 위한 것이다.The present invention has been made to solve the above problems, and to provide a gas supply system for an atomic layer deposition apparatus capable of precisely controlling the injection speed while controlling the injection amount of the precursor and the reaction gas.

상기한 목적을 달성하기 위하여, 본 발명은, 액체상태의 전구체가 수용되는 캐니스터; 상기 캐니스터로 삽입되어 불활성기체를 주입시키는 불활성기체주입관; 상기 불활성기체의 압력에 의해 배출되는 전구체를 헤드방향으로 이송하는 전구체배출관; 상기 전구체배출관에 의해 운송된 전구체를 기화시킴과 동시에 유동속도를 제어하는 원자화유닛; 상기 원자화유닛에 의해 기화된 전구체를 헤드로 이송시키는 헤드분사관을 포함하는 원자층 증착장치용 가스 공급시스템을 제공한다.In order to achieve the above object, the present invention is a canister containing a precursor of the liquid state; An inert gas injection tube inserted into the canister to inject an inert gas; A precursor discharge pipe for transferring the precursor discharged by the pressure of the inert gas in a head direction; An atomization unit for vaporizing the precursor transported by the precursor discharge pipe and controlling the flow rate; It provides a gas supply system for an atomic layer deposition apparatus including a head injection pipe for transferring the precursor vaporized by the atomization unit to the head.

상기 원자화유닛은 상기 원자화유닛 내부로 상기 전구체를 기화시켜 분출하는 노즐이 구비되는 것이 바람직하다.The atomization unit is preferably provided with a nozzle for evaporating the precursor in the atomization unit to eject.

상기 원자화유닛은 상기 전구체의 유동속도를 제어하는 불활성기체를 분출하는 유동속도제어부가 구비되는 것이 바람직하다.The atomization unit is preferably provided with a flow rate control unit for ejecting an inert gas for controlling the flow rate of the precursor.

본 발명에 의하면, 헤드로 주입되는 불활성 가스, 전구체 및 반응가스의 분사량 및 분사속도를 각각 원하는 대로 조절할 수 있어 정밀하게 분사시킬 수 있는 이점이 있다.According to the present invention, the injection amount and the injection speed of the inert gas, the precursor and the reaction gas injected into the head can be adjusted as desired, respectively, and thus there is an advantage that the injection can be performed precisely.

또한, 원자화된 가스를 이용함으로써 더욱 균일한 고품질의 박막을 얻을 수 있는 이점이 있다.In addition, there is an advantage that a more uniform high quality thin film can be obtained by using the atomized gas.

도 1은 종래기술에 의한 원자층 증착장치의 전구체 공급장치 구성을 나타내는 구성도;
도 2는 본 발명에 의한 원자층 증착장치용 가스 공급시스템의 구성을 나타내는 구성도;
도 3은 도 2에서 원자화유닛의 구성을 나타내는 구성도.1 is a block diagram showing a configuration of a precursor supply apparatus of an atomic layer deposition apparatus according to the prior art;
2 is a configuration diagram showing a configuration of a gas supply system for an atomic layer deposition apparatus according to the present invention;
3 is a configuration diagram showing the configuration of the atomization unit in FIG.

본 발명의 실시예의 구성 및 작용에 대하여 첨부한 도면을 참조하여 상세하게 설명한다.The configuration and operation of the embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2를 참조하면, 본 발명에 의한 원자층 증착장치용 가스 공급시스템은 캐니스터(100), 제1불활성기체저장소(200), 제2불활성기체저장소(300), 원자화유닛(500), 헤드분사관(550), 불활성기체주입관(250), 전구체배출관(150), 제2불활성기체주입관(350), 제어부(700)를 포함하여 구성된다.2, the gas supply system for an atomic layer deposition apparatus according to the present invention canister 100, the first inert gas reservoir 200, the second inert gas reservoir 300, the atomization unit 500, the head powder The pipe 550, the inert gas injection pipe 250, the precursor discharge pipe 150, the second inert gas injection pipe 350, and the controller 700 are configured to be included.

상기 캐니스터(100)에는 액체상태의 전구체 또는 증착물질이 저장된다. 예를 들어, 상기 전구체는 TMA(Trimethyl Aluminum) 등으로 구성될 수 있다.The canister 100 stores a precursor or a deposition material in a liquid state. For example, the precursor may be composed of TMA (Trimethyl Aluminum) and the like.

상기 캐니스터(100)에는 불활성기체주입관(250) 및 전구체배출관(150)이 내부로 삽입되어 있다. 또한, 상기 제1불활성기체저장소(200)에는 불활성기체가 저장되며, 상기 제1불활성기체저장소에 저장된 불활성기체는 불활성기체주입관(250)을 통해 캐니스터(100)로 이송될 수 있다.An inert gas injection tube 250 and a precursor discharge tube 150 are inserted into the canister 100. In addition, the inert gas is stored in the first inert gas reservoir 200, and the inert gas stored in the first inert gas reservoir may be transferred to the canister 100 through the inert gas injection pipe 250.

상기 불활성기체로는 질소(N2), 헬륨(He), 아르곤(Ar) 등의 가스가 사용될 수 있다.As the inert gas, a gas such as nitrogen (N 2 ), helium (He), argon (Ar), or the like may be used.

상기 전구체배출관(150)은 캐니스터(100)로부터 배출되는 전구체 또는 증착물질을 원자화유닛(500)으로 이송한다. 상기 전구체배출관(150)에는 액체 질량유동제어기(MFC)가 구비되어 이송되는 전구체 또는 증착물질의 양이 조절되는 것이 바람직하다.The precursor discharge pipe 150 transfers the precursor or deposition material discharged from the canister 100 to the atomization unit 500. It is preferable that the precursor discharge pipe 150 is equipped with a liquid mass flow controller (MFC) to control the amount of precursor or deposition material to be transported.

한편, 제2불활성기체저장소(300)에도 불활성기체가 저장되며, 상기 제2불활성기체저장소(300)에 저장된 불활성기체는 캐니스터를 거치지 않고 바로 원자화유닛(500)으로 이송된다.On the other hand, the inert gas is also stored in the second inert gas storage 300, the inert gas stored in the second inert gas storage 300 is transferred directly to the atomization unit 500 without passing through the canister.

상기 캐니스터(100)에 삽입된 불활성기체주입관(250)은 불활성기체를 분사시켜 그 압력으로 내부에 저장된 전구체 또는 증착물질을 전구체배출관(150)을 통해 이송시키는 역할을 한다. The inert gas injection tube 250 inserted into the canister 100 serves to inject the inert gas and transfer the precursor or deposition material stored therein at the pressure through the precursor discharge tube 150.

즉, 상기 불활성기체주입관(250)을 통해 분사되는 불활성기체의 압력에 따라 전구체배출관(150)을 통해 이송되는 전구체 또는 증착물질의 분자량이 조절되며, 상기 전구체배출관(150)을 통해 이송된 전구체 또는 증착물질은 원자화유닛(500)으로 이동된다.That is, the molecular weight of the precursor or the deposition material transferred through the precursor discharge pipe 150 is controlled according to the pressure of the inert gas injected through the inert gas injection pipe 250, the precursor transferred through the precursor discharge pipe 150 Alternatively, the deposition material is transferred to the atomization unit 500.

도 3을 참조하면, 상기 원자화유닛(500)에는 노즐(510)이 구비된다. 즉, 상기 노즐(510)은 전구체배출관(150)의 끝단에 결합되며, 전구체배출관(150)을 통해이송된 전구체 또는 증착물질은 노즐(510)에 의하여 기화하며 원자화유닛(500) 내부로 분사된다.Referring to FIG. 3, the atomization unit 500 is provided with a nozzle 510. That is, the nozzle 510 is coupled to the end of the precursor discharge pipe 150, the precursor or deposition material transported through the precursor discharge pipe 150 is vaporized by the nozzle 510 and injected into the atomization unit 500. .

이와 동시에 제2불활성기체저장소(300)에 저장된 불활성기체가 제2불활성기체주입관(350)을 통해 원자화유닛(500) 내부로 주입된다. 상기 제2불활성기체저장소(300) 및 제2불활성기체주입관(350)은 전구체 또는 증착물질의 유동속도를 제어하는 유동속도제어부를 구성한다.At the same time, the inert gas stored in the second inert gas storage 300 is injected into the atomization unit 500 through the second inert gas injection pipe 350. The second inert gas reservoir 300 and the second inert gas injection tube 350 constitute a flow rate control unit for controlling the flow rate of the precursor or the deposition material.

구체적으로, 상기 노즐(510)에 의해 기화된 전구체 또는 증착물질은 상기 제2불활성기체주입관(350)을 통해 주입되는 불활성기체의 압력에 의하여 유동속도가 높아져 빠른 속도로 헤드분사관(550)을 통하여 헤드로 주입된다.Specifically, the precursor or vapor deposition material vaporized by the nozzle 510 is increased by the pressure of the inert gas injected through the second inert gas injection pipe 350, the head injection pipe 550 at a high speed Is injected into the head through.

즉, 본 발명에 의하면, 제어부(700)에서 제1불활성기체저장소(200) 및 제2불활성기체저장소(300)에 저장된 불활성기체의 압력을 제어하여 전구체 또는 증착물질의 이송되는 분자량 및 유동속도를 각각 제어할 수 있어 최적화된 양과 속도로 전구체 또는 증착물질을 헤드로 주입시켜 고품질의 박막을 얻을 수 있다.That is, according to the present invention, the control unit 700 controls the pressure of the inert gas stored in the first inert gas reservoir 200 and the second inert gas reservoir 300 to determine the molecular weight and flow rate of the precursor or deposition material to be transferred. Each can be controlled to inject a precursor or deposition material into the head in an optimized amount and speed to obtain a high quality thin film.

다음으로, 본 발명에 의한 원자층 증착장치용 가스 공급시스템을 이용한 원자층 증착방법에 대해 설명한다.Next, the atomic layer deposition method using the gas supply system for atomic layer deposition apparatus which concerns on this invention is demonstrated.

캐니스터(100)에는 TMA, H2O와 같은 전구체 또는 증착물질이 액체상태로 밀폐된 상태로 저장된다. In the canister 100, precursors or deposition materials such as TMA and H 2 O are stored in a sealed state in a liquid state.

이때, 제어부(700)에서는 제1불활성기체저장소(200)에 저장된 질소(N2)와 같은 불활성기체를 불활성기체주입관(250)을 통해 캐니스터 내부로 주입시킨다. 그러면, 상기 불활성기체의 압력에 의해 캐니스터 내부에 수용된 전구체 또는 증착물질은 전구체배출관(150)을 통해 이송된다.At this time, the control unit 700 injects an inert gas such as nitrogen (N 2 ) stored in the first inert gas reservoir 200 into the canister through the inert gas injection pipe 250. Then, the precursor or deposition material received in the canister by the pressure of the inert gas is transferred through the precursor discharge pipe 150.

상기 불활성기체주입관(250)의 끝단은 캐니스터 내부에서 상기 전구체 또는 증착물질의 상부에 위치하는 것이 바람직하다. An end of the inert gas injection tube 250 is preferably located above the precursor or the deposition material in the canister.

상기 전구체배출관(150)을 통해 이송된 전구체 또는 증착물질은 원자화유닛(500) 내부에서 노즐을 통해 기화되면서 분사된다. 이때, 제어부(700)에서는 제2불활성기체저장소(300)에 저장된 불활성기체를 원자화유닛(500) 내부로 일정압력으로 분사되도록 한다.The precursor or deposition material transferred through the precursor discharge pipe 150 is sprayed while being vaporized through a nozzle inside the atomization unit 500. At this time, the control unit 700 is to spray the inert gas stored in the second inert gas storage 300 to the atomization unit 500 at a predetermined pressure.

그러면, 원자화유닛(500) 내부에서 기화된 전구체 또는 증착물질은 불활성기체의 압력에 의하여 증속되어 원하는 속도로 헤드로 주입된다.Then, the precursor or deposition material vaporized in the atomization unit 500 is increased by the pressure of the inert gas and injected into the head at a desired speed.

헤드로 주입된 전구체 또는 증착물질은 헤드 내부의 일정 패턴을 거쳐 기판에 분사되며, 상기 전구체와 증착물질은 서로 화학반응에 의하여 박막을 형성하게 된다.The precursor or deposition material injected into the head is sprayed onto the substrate through a predetermined pattern inside the head, and the precursor and the deposition material form a thin film by chemical reaction with each other.

상기에서는 본 발명의 실시예들을 참조하여 설명하였지만, 해당 기술 분야에서 통상의 지식을 가진 자라면 하기의 특허 청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.Although the above has been described with reference to embodiments of the present invention, those skilled in the art may variously modify and modify the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be understood that it can be changed.

100 : 캐니스터 150 : 전구체배출관
200 : 제1불활성기체저장소 250 : 불활성기체주입관
300 : 제2불활성기체저장소 350 : 제2불활성기체주입관
400 : 헤드 600 : 기판
700 : 제어부100: canister 150: precursor discharge pipe
200: first inert gas reservoir 250: inert gas injection pipe
300: second inert gas reservoir 350: second inert gas injection pipe
400: head 600: substrate
700: control unit

Claims (3)

액체상태의 전구체가 수용되는 캐니스터;
상기 캐니스터로 삽입되어 불활성기체를 주입시키는 불활성기체주입관;
상기 불활성기체의 압력에 의해 배출되는 전구체를 헤드방향으로 이송하는 전구체배출관;
상기 전구체배출관에 의해 운송된 전구체를 기화시킴과 동시에 유동속도를 제어하는 원자화유닛;
상기 원자화유닛에 의해 기화된 전구체를 헤드로 이송시키는 헤드분사관을 포함하는 원자층 증착장치용 가스 공급시스템.
A canister in which a liquid precursor is received;
An inert gas injection tube inserted into the canister to inject an inert gas;
A precursor discharge pipe for transferring the precursor discharged by the pressure of the inert gas in a head direction;
An atomization unit for vaporizing the precursor transported by the precursor discharge pipe and controlling the flow rate;
And a head spray pipe for transferring the precursor vaporized by the atomization unit to the head.
제1항에 있어서,
상기 원자화유닛은 상기 원자화유닛 내부로 상기 전구체를 기화시켜 분출하는 노즐이 구비되는 것을 특징으로 하는 원자층 증착장치용 가스 공급시스템.
The method of claim 1,
The atomization unit is a gas supply system for an atomic layer deposition apparatus, characterized in that a nozzle for evaporating and ejecting the precursor into the atomization unit.
제2항에 있어서,
상기 원자화유닛은 상기 전구체의 유동속도를 제어하는 불활성기체를 분출하는 유동속도제어부가 구비되는 것을 특징으로 하는 원자층 증착장치용 가스 공급시스템.The method of claim 2,
The atomization unit is a gas supply system for an atomic layer deposition apparatus, characterized in that the flow rate control unit for ejecting an inert gas for controlling the flow rate of the precursor is provided.
KR1020180091533A 2018-08-07 2018-08-07 Gas supplying system for ALD KR20200016428A (en)

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