KR20200001874A - Vertical cylindrical reaction chamber for micro led epitaxy and linear luminant fabrication process - Google Patents

Abstract

The present invention relates to a vertical cylindrical reaction chamber for epitaxy of a micrometer LED and a manufacturing method of a linear light emitting body. Particularly, in the manufacturing method for molding a molding epitaxial wire of a composition light emitting die of a fine LED, a linear light emitting body mostly performs steps of epitaxy, depositing, etching and the like of the linear light emitting body by using the vertical cylindrical reaction chamber. Therefore, cutting and assembling processes can be performed even if a linear epitaxial body has an ultrafine volume and, also, an effect of increasing a yield can be obtained.

Description

VERTICAL CYLINDRICAL REACTION CHAMBER FOR MICRO LED EPITAXY AND LINEAR LUMINANT FABRICATION PROCESS}

The present invention relates to an epitaxial cylindrical reaction chamber for epitaxial micrometer LEDs and a method of manufacturing a linear light emitting body. In particular, the micrometer LED uses a linear body as a crystal base wire, and spray thin film deposition using an upright cylindrical reaction chamber. The present invention relates to a process for producing the same.

Conventional light emitting diodes all have circular wafer substrates A in the manufacturing process (see FIG. 1). The manufacturing process of the chip can reduce the volume of the die (B) in accordance with the development of epitaxial technology, but the reduced size is not enough to be observed or assembled with the naked eye in general. Therefore, how to cut and assemble a fine die is a technique that cannot be solved conventionally. In addition, the fine die (B) has to be assembled by hand or by machine in a single manner, one by one, and has the disadvantage of often leading to a decrease in yield due to instability of the welding quality.

Further, in the manufacturing process of the conventional general light emitting diode of FIG. 2 (described in accordance with the arrow display), the first process C is disposed below the substrate C1 (GSAS); A second step (D) of depositing a first epitaxial layer (n-type epi) D1 and a second epitaxial layer (P-type epi) D2 on the substrate C1; The third deposition layer (ITP) E1 is deposited on top of the first and second epitaxial layers D1 and D2 on the substrate C1. A third step (E) for depositing an N electrode layer (E2) on the bottom surface of the substrate (C1); A fourth step (F) of applying one layer of photoresist layer (F1) onto the third deposited film layer (ITP) E1; A fifth step of forming concave grooves G3 in the center portion by irradiating UV light G2 to the center portion (exposure / development) by using the blocking material G1 at both ends of the upper surface of the photoresist layer F1 (exposure / development) G); A sixth step (H) for depositing a layer of metal deposition layer (P electrode) H1 in the concave groove G3 formed at the center of the upper surface of the photoresist layer F1 and on the upper surface thereof; Seventh step (I) of forming electrode (I1) by etching; An eighth step (J) of performing a half cutting and energizing test on the epitaxial wafer; A ninth process K for completely cutting (or cutting) the epitaxial wafer; A tenth step (L) for performing wafer expansion and appearance inspection; And finally, the eleventh step (M) of packing and receiving.

In addition, the manufacturing process of the conventional light emitting diode die includes approximately 21 processes (having different process sequences according to different display colors). That is, the conventional organometallic vapor deposition chamber and manufacturing process of the light emitting diode (die) (see the flow chart shown in FIG. 3) include: 1. wafer cleaning, 2. epitaxial, 3. photoresist application, 4. first order Photomasking, 5. dry etching, 6. metal deposition, 7. secondary photomasking, 8. chemical etching, 9. metal deposition, 10. third photomasking, 11. chemical etching, 12. fourth photo Masking, 13. metal deposition, 14. chemical etching, 15. thin film deposition, 16. fifth photomasking, 17. chemical etching, 18. precision cutting, 19. die screening, 20. packaging and receiving, 21. assembly and It consists of 21 procedures such as sales. The number of dies used for the display is very large, and when assembling the finished product to the display, it is necessary to proceed in three steps in the order of points, lines, and faces.If the die volume is greatly reduced and then assembled by machine, There is a difficulty that requires considerable technical power. In addition, it is also a disadvantage that the shape can not be formed properly, leading to a decrease in yield.

In addition, referring to the conventional organic metal vapor deposition (MOCVD) manufacturing process (a plan view of the top and front view of the implementation manufacturing shown in Fig. 4), the wafer carrier substrate C1 (GSAS) is placed in the reaction chamber N. To place. Here, a gas inlet N1 is provided at an upper end of the reaction chamber, and a gas nozzle (not shown) is installed at the gas inlet N1. In addition, gas outlets N2 are formed at the left and right sides of the reaction chamber N, respectively, and an RF heater O is installed in the reaction chamber N, whereby a plurality of wafer carrier substrates C and GSAS are formed. The wafer substrate A is subjected to the epitaxial deposition process of the multilayer thin film by the gas ejected from the gas inlet N1 on the upper end of the reaction chamber N in the reaction chamber N. As can be seen from this, in the epitaxial deposition method, a multilayer deposition film is deposited on a wafer surface, and a plurality of dies are formed by cutting, all of which have various disadvantages as described above.

In the conventional manufacturing process, the epitaxial wafer substrate A is obtained and then cut to form a fine die B. However, since the total number of dies B is one by one, the process of transferring the whole and welding each die one by one is practically difficult, and thus, a large difference in yield occurs and product cost increases. It has a big disadvantage.

Therefore, the above-mentioned conventional manufacturing process is cumbersome and complicated, and the process failure rate is high when the die volume is too small. Therefore, the present inventors studied a method of manufacturing a micrometer LED in order to focus on these problems, and as a result, the LED molding die is too small to be assembled and the problem that can be solved at the same time the process yield problem, the present invention A method of manufacturing an upright cylindrical reaction chamber and a linear light-emitting body of a micrometer LED according to the present invention was devised.

In accordance with the above object, a method for producing a linear organometallic vapor deposition chamber and a light emitting diode (crystal wire) according to the present invention comprises: 1. wafer cleaning; 2. first epitaxial process; 3. high temperature fusion; 4. second epitaxial process; 5. high temperature fusion; 6. third epitaxial process; 7. conductive film (ITO); 8. metal deposition; 9. dry etching; 10. cutting length; 11. energization test; 12. Includes about 12 processes, including packaging and receipt.

The present invention can achieve the following several functions after the above technical means.

1. The reaction chamber is manufactured in the shape of an upright cylindrical reaction chamber, and a plurality of linear crystal base wire materials are arranged at equal intervals in a vertical suspension shape inside the upright cylindrical reaction chamber so that they are heated by themselves and the gas is upright. A plurality of chamber epitaxial processes are performed by ejecting from a hole in the top surface of the cylindrical reaction chamber.

2. The epitaxial manufacturing method by the upright cylindrical reaction chamber which concerns on this invention has the characteristic that a large number of epitaxial elements can be completed at once.

3. According to the linear die of the present invention, since the linear bodies are directly arranged and used for a display, they need only be etched in a manufacturing process and do not need to form a single die by performing half cutting or full cutting. Have

4. Since the linear die according to the present invention are integrally connected in series, they can be cut and assembled under minute volume.

5. The linear die according to the invention is a one-piece in series connection. Therefore, unlike the process of reassembling and then reassembling the die in the related art, the linear die according to the present invention has a feature of being arranged in a wire form after epitaxial use.

6. The linear die according to the present invention can be molded into a linear die at one time, so that the number of molded dies is larger than in the conventional wafer fabrication process. Therefore, the cost is lower when the price is set by quantity.

7. The linear epitaxial light emitter according to the present invention can be used in band type LED or neon sign lamp.

1 is a perspective schematic view of a state in which a conventional wafer is molded.
2 is a manufacturing flowchart of a conventional conventional light emitting diode.
3 is a manufacturing flow block diagram of a conventional organometallic vapor deposition chamber and a light emitting diode (die).
4 is a plan view from above and in front of a fabrication of a conventional organometallic vapor deposition chamber (MOCVD).
5 is a manufacturing flow block diagram of a linear organometallic vapor deposition chamber and a light emitting diode (crystal wire) according to the present invention.
6 is a flowchart illustrating the manufacture of a fine light emitting diode by linear organometallic vapor deposition according to the present invention.
7 is a perspective schematic diagram of the manufacturing flow of FIG. 5.
Figure 8 is a plan view from the top and front view of the production of the linear organometallic vapor deposition reaction chamber according to the present invention.
9 is a perspective schematic diagram showing an energization test of a linear crystal wire body according to the present invention.
10 is a perspective schematic view of an embodiment in which the finished product is mounted on the linear crystal wire body according to the present invention.

5, which is a manufacturing flow block diagram of a linear organometallic vapor deposition chamber and a light emitting diode (crystal wire) according to the present invention, mainly, 1. wafer cleaning; 2. primary epitaxial; 3. high temperature fusion; 4. secondary epitaxial; 5. high temperature fusion; 6. tertiary epitaxial; 7. conductive film (ITO); 8. metal deposition; 9. dry etching; 10. cutting length; 11. energization test; 12. Includes about 12 processes, including packaging and receipt.

6 and 7, this is a perspective schematic diagram of a manufacturing flow and manufacturing flow of a linear micro light emitting diode according to the present invention, the manufacturing process (described in accordance with the arrow) is as follows. In the first step (1), the crystal base wire (linear conductive material-P electrode heating) 10 is disposed; In the second process (2), a plurality of epitaxial layers, that is, the first layer N-semiconductor layer (N-type epi) 11, are wrapped in the upright cylindrical reaction chamber 7 so as to surround the periphery of the crystal base wire 10. ), Forming a second layer P-type epi (12); And the energy gap between the first layer N-semiconductor layer (N-type epi) 11 and the second layer P-semiconductor layer (P-type epi) 12 is the light emitting layer 13; In the third process (3), a conductive film (ITO) 14 is further deposited outside the second layer P-type epitaxial layer 12; In the fourth step (4), another layer of metal deposition film (N electrode) 15 is deposited on the conductive film (ITO) 14; In the fifth step (5), the epitaxial wire body 100 is etched; In the sixth step (6), the energization test is conducted by energizing the crystal base wire (P electrode) 10 and the metal deposition film (N electrode) 15; In the seventh step (6), the final packaging is received.

The crystal base wire 10 is a P electrode, and the outermost layer is a metal deposited film (N electrode) 15.

Referring also to Figure 8, which is a plan view from the top and front view of the production of the linear organometallic vapor deposition reaction chamber according to the present invention. Here, the reaction chamber is made of an upright cylindrical reaction chamber 8, and gas inlets 80 and gas outlets 81 are formed at both upper and lower ends, respectively. In addition, the heater 9 is installed at the lower end of the inside of the chamber, so that the crystal base wire 10 is directly seated in the upright cylindrical reaction chamber 8 so that the heat is transferred and self-heated. In addition, a gas nozzle (not shown) is installed at the upper gas inlet 80, and a plurality of arranged through holes 82 are formed at the peripheral end surface of the gas inlet 80. The plurality of arranged through holes 82 is for penetrating the crystal base wire 10 to sag down.

The upper surface of the upright cylindrical reaction chamber 8 is fixed by passing through a plurality of crystal base wires 1 to be drooped down (to be described with reference to FIG. 7), and then an element and an organic atom group to be compounded (有机A gas composed of nets is sprayed from a gas nozzle (not shown) provided in the gas inlet 70 of the upright cylindrical reaction chamber 7, whereby the necessary material thin film is attached to the crystal base wire 10. That is, the epitaxial process is completed through processes such as epitaxial, deposition (ITO), deposition (N electrode), and etching by the reaction chamber.

In the epitaxial epitaxial wire body 100, a plurality of dies 101 are formed in the wire body after etching, and each die 101 has a central crystal base wire (linear conductive material-P electrode heating) 10. The first layer N semiconductor layer (N-type epi) 11 and the second layer P semiconductor layer (P-type epi) 12 are coated on the outside, and the first layer N semiconductor layer ( A light emitting layer 13 is formed between the N-type epi 11 and the second layer P-type epitaxial layer 12, followed by a conductive film (ITO) 14 and a metal deposited film (N electrode). (15) is deposited and the structure provided with the countless die 101 in the epitaxial wire body 100 is completed.

Finally, the epitaxial wire body 100 completes the test of the epitaxial wire body 100 in the final stage through an energization test (see FIG. 9) by the driving IC 200.

Also, referring to FIG. 10, this is a perspective schematic diagram of an embodiment in which the finished product is mounted on the linear crystal wire body according to the present invention. Here, the epitaxial wire body 100 is subjected to an epitaxial process and a plurality of test inspections are arranged in sequence to form a linear type LED display is used to form a curtain.

1st process
10 Crystal Base Wire (P Electrode)
2nd process
11 N semiconductor layer (N-type epi)
12 P semiconductor layer (P-type epi)
13 light emitting layer
3rd process
14 ITO
4th process
15 Metal Deposition Film (N Electrode)
5th process
6 sixth process
7 sixth process
8 upright cylindrical reaction chamber
80 gas inlet
81 gas outlet
82 through hole
9 heater
100 epitaxial wire
101 die
200 drive ICs
A wafer substrate
B die
C first process
C1 substrate (GSAS)
D second process
D1 first epitaxial layer (n-type epi)
D2 second epitaxial layer (P-type epi)
E third process
E1 Deposition Film (ITP)
E2 N electrode layer
F fourth process
F1 photoresist layer
G fifth process
G1 blocker
G2 UV light
G3 concave groove
H 6th process
H1 metal deposition layer (P electrode)
I 7th process
I1 P electrode
J eighth process
K ninth process
L 10th process
M eleventh process
N reaction chamber
N1 gas inlet
N2 gas outlet
O RF heater

Claims (2)

In the method for manufacturing an upright cylindrical reaction chamber for epitaxial micrometer LED and a linear light emitter,
The base body is made of a crystal linear body, the reaction chamber is made of an upright cylindrical reaction chamber structure, and the entire number of the crystal linear bodies are hanged upright in the upright cylindrical reaction chamber in a manner of sagging downward, and the inside of the upright cylindrical reaction chamber is In this case, a heater is installed at a position close to the lower end so as to directly heat transfer to the crystal linear body to self-heat, and at the upper end of the upright cylindrical reaction chamber, a multi-layer epitaxial process is performed by a gas spray method. To have a 360-degree circumferential luminescence function, to obtain a linear die with a very small volume, and to perform effective cutting and assembly. The method of claim 1,
The linear body epitaxial light emitter is used for a band-type LED or neon sign lamp, epitaxial epitaxial reaction chamber for a micrometer LED and a method of manufacturing a linear light emitter.

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