KR20190133746A - Underfill material, underfill film, and manufacturing method of semiconductor device using same - Google Patents

Underfill material, underfill film, and manufacturing method of semiconductor device using same Download PDF

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KR20190133746A
KR20190133746A KR1020197032035A KR20197032035A KR20190133746A KR 20190133746 A KR20190133746 A KR 20190133746A KR 1020197032035 A KR1020197032035 A KR 1020197032035A KR 20197032035 A KR20197032035 A KR 20197032035A KR 20190133746 A KR20190133746 A KR 20190133746A
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South Korea
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mass
semiconductor chip
underfill
parts
circuit board
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KR1020197032035A
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Korean (ko)
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KR102325868B1 (en
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다이스케 모토무라
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데쿠세리아루즈 가부시키가이샤
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    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
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Abstract

저압 실장 및 보이드리스 실장을 실현할 수 있는 언더필재, 및 이를 이용한 반도체 장치의 제조 방법을 제공한다. 언더필재는, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물을 포함하는 주조성물로 이루어지며, 아크릴 폴리머는 100질량부의 주조성물 중에 10질량부 이상 60질량부 이하의 범위로 함유되어 있으며, 말레이미드 화합물은 100질량부의 주조성물 중에서 20질량부 이상 70질량부 이하의 범위로 함유되어 있다. 저압 실장 및 보이드리스 실장을 실현할 수 있다An underfill material capable of realizing low pressure mounting and voidless mounting, and a method of manufacturing a semiconductor device using the same. The underfill material consists of a cast product containing an acrylic polymer, an acrylic monomer, and a maleimide compound, and the acrylic polymer is contained in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product. The compound is contained in the range of 20 parts by mass or more and 70 parts by mass or less in 100 parts by mass of the cast product. Low pressure mounting and voidless mounting can be realized.

Figure P1020197032035
Figure P1020197032035

Description

언더필재, 언더필 필름, 및 이를 이용한 반도체 장치의 제조 방법Underfill material, underfill film, and manufacturing method of semiconductor device using same

본 발명은, 언더필재, 언더필 필름, 및 이를 이용한 반도체 장치의 제조 방법에 관한 것이다.The present invention relates to an underfill material, an underfill film, and a manufacturing method of a semiconductor device using the same.

최근, 반도체 칩의 실장 방법에 있어서, 공정 단축을 목적으로, 반도체 IC(Integrated Circuit)의 전극 상에 언더필 필름을 붙이는 「선공급형 언더필 필름(PUF : Pre-applied Underfill Film)」의 사용이 검토되고 있다. 이 선공급형 언더필 필름을 사용한 실장 방법은, 예를 들면, 이하와 같이 행해진다(특허문헌 1 참조).Recently, in the method of mounting a semiconductor chip, the use of a "pre-applied underfill film (PUF)" for attaching an underfill film on an electrode of a semiconductor IC (Integrated Circuit) for the purpose of shortening the process is considered. have. The mounting method using this pre-supply type underfill film is performed as follows, for example (refer patent document 1).

공정 A : 웨이퍼에 언더필 필름을 붙이고, 웨이퍼를 다이싱하여 반도체 칩을 얻는다.Step A: An underfill film is attached to the wafer, and the wafer is diced to obtain a semiconductor chip.

공정 B : 언더필 필름이 붙여진 상태로, 반도체 칩을 위치 맞춤하여 회로 기판 상에 배치한다.Step B: The semiconductor chip is aligned and placed on a circuit board while the underfill film is pasted.

공정 C : 반도체 칩을 열 압착하여, 땜납 범프의 금속 결합에 의한 도통 확보, 및 언더필 필름의 경화에 의한 접착을 행한다.Step C: The semiconductor chips are thermocompressed to secure conduction by metal bonding of the solder bumps, and adhesion by curing the underfill film.

반도체 칩의 실장 방법에 있어서, 땜납 범프를 접합하는 접착제로서는, 예를 들면 에폭시 수지를 이용한 열경화 접착제가 제안되어 있다(특허문헌 2 참조). 또, 저흡습성, 양호한 경화성, 및 장기의 가사 시간(pot life)의 관점에서, 비스말레이미드류 등의 경화성 수지의 검토도 이루어지고 있다(특허문헌 3 참조).In the mounting method of a semiconductor chip, as an adhesive agent which joins a solder bump, the thermosetting adhesive which used the epoxy resin, for example is proposed (refer patent document 2). Moreover, from the viewpoint of low hygroscopicity, favorable curability, and long pot life, studies of curable resins such as bismaleimide have also been made (see Patent Document 3).

언더필 기술에 대해서는, 최근에는, 저압 실장 및 보이드리스 실장을 실현할 수 있는 언더필 필름이 얻어지는 언더필재가 요구되고 있다.Regarding the underfill technology, an underfill material in which an underfill film capable of realizing low pressure mounting and voidless mounting is obtained in recent years has been demanded.

일본국 특허공개 2005-028734호 공보Japanese Patent Publication No. 2005-028734 일본국 특허공개 2006-335817호 공보Japanese Patent Publication No. 2006-335817 일본국 특허공개 2014-169450호 공보Japanese Patent Publication No. 2014-169450

본 기술은, 이러한 종래의 실정을 감안하여 창작된 것이며, 저압 실장 및 보이드리스 실장을 행할 수 있는 언더필재, 언더필 필름, 및 이를 이용한 반도체 장치의 제조 방법을 제공한다.The present technology was created in view of such a conventional situation, and provides an underfill material, an underfill film, and a method of manufacturing a semiconductor device using the same, which can be subjected to low pressure mounting and voidless mounting.

본 발명의 발명자들은, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물을 주조성물로서 함유하는 언더필재 중의, 아크릴 폴리머와 말레이미드 화합물의 함유량을 특정 범위로 함으로써, 상기 과제를 해결할 수 있는 것을 알아내었다.The inventors of the present invention have found that the above problems can be solved by setting the content of the acrylic polymer and the maleimide compound in the underfill material containing the acrylic polymer, the acrylic monomer, and the maleimide compound as a cast product. .

본 발명은, 반도체 칩과 회로 기판의 사이에 배치되고, 경화되면 상기 반도체 칩을 상기 회로 기판에 고정하는 미경화 언더필재로서, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물로 이루어지는 주조성물을 포함하고, 상기 아크릴 폴리머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유되며, 상기 말레이미드 화합물은, 상기 주조성물의 100질량부 중에 20질량부 이상 70질량부 이하의 범위로 함유된 언더필재이다.The present invention is an uncured underfill material which is disposed between a semiconductor chip and a circuit board and, when cured, fixes the semiconductor chip to the circuit board, and includes a cast product composed of an acrylic polymer, an acrylic monomer, and a maleimide compound. The acrylic polymer is contained in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product, and the maleimide compound is 20 parts by mass or more and 70 parts by mass or less in 100 parts by mass of the cast product. It is an underfill material contained in the range of.

본 발명은, 상기 아크릴 모노머는, 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유된 언더필재이다.The present invention is an underfill material containing the acrylic monomer in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product.

본 발명은, 상기 주조성물 중의 상기 아크릴 폴리머는, 중량 평균 분자량(Mw)이, 100000 이상 1200000 이하의 범위인 언더필재이다.In this invention, the said acrylic polymer in the said cast product is an underfill material whose weight average molecular weight (Mw) is the range of 100000 or more and 1200000 or less.

본 발명은, 상기 아크릴 모노머는 플루오렌계 아크릴레이트를 포함하는 언더필재이다.In the present invention, the acrylic monomer is an underfill material containing fluorene acrylate.

본 발명은, 상기 말레이미드 화합물은, 1분자 중에 말레이미드기를 2개 이상 포함하는 언더필재이다.This maleimide compound is an underfill material which contains two or more maleimide groups in 1 molecule.

본 발명은, 상기 말레이미드 화합물은 비스말레이미드인 언더필재이다.This maleimide compound is an underfill material which is bismaleimide.

본 발명은, 페놀 화합물을 더 포함하는 언더필재이다.This invention is an underfill material which further contains a phenolic compound.

본 발명은, 반도체 칩과 회로 기판의 사이에 배치되고, 경화되면 상기 반도체 칩을 상기 회로 기판에 고정하는 미경화 언더필 필름으로서, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물로 이루어지는 주조성물을 함유하고, 상기 아크릴 폴리머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위가 되며, 상기 말레이미드 화합물은 상기 주조성물의 100질량부 중에 20질량부 이상 70질량부 이하의 범위가 된 언더필 필름이다.The present invention is an uncured underfill film disposed between a semiconductor chip and a circuit board and, when cured, to fix the semiconductor chip to the circuit board. The present invention includes a cast product comprising an acrylic polymer, an acrylic monomer, and a maleimide compound. The acrylic polymer is in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product, and the maleimide compound is in a range of 20 parts by mass or more and 70 parts by mass or less in 100 parts by mass of the cast product. It became an underfill film.

본 발명은, 상기 아크릴 모노머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유된 언더필 필름이다.This acrylic monomer is the underfill film contained in the range of 10 mass parts or more and 60 mass parts or less in 100 mass parts of the said casting products.

본 발명은, 상기 주조성물 중의 상기 아크릴 폴리머는, 중량 평균 분자량(Mw)이 100000 이상 1200000 이하의 범위인 언더필 필름이다.This acrylic polymer in the said cast product is an underfill film whose weight average molecular weights (Mw) are 100000 or more and 1200000 or less.

본 발명은, 상기 아크릴 모노머는 플루오렌계 아크릴레이트를 포함하는, 언더필 필름이다.This invention is an underfill film in which the said acrylic monomer contains a fluorene acrylate.

본 발명은, 상기 말레이미드 화합물은, 1분자 중에 말레이미드기를 2개 이상 포함하는 언더필 필름이다.This maleimide compound is an underfill film which contains two or more maleimide groups in 1 molecule.

본 발명은, 상기 말레이미드 화합물은 비스말레이미드인 언더필 필름이다.This invention is an underfill film whose said maleimide compound is bismaleimide.

본 발명은, 페놀 화합물을 더 포함하는 언더필 필름이다.This invention is an underfill film containing a phenol compound further.

본 발명은, 인장 파단 강도의 값이 0.01MPa 이상 5.0MPa 이하의 범위에 포함되는 언더필 필름이다.This invention is an underfill film in which the value of tensile breaking strength is contained in the range of 0.01 MPa or more and 5.0 MPa or less.

본 발명은, 반도체 칩의 범프가 설치된 표면과 회로 기판의 표면의 사이에 언더필 필름을 배치하고, 상기 언더필 필름에 의해 상기 반도체 칩과 상기 회로 기판을 접착시켜 반도체 장치를 제조하는 반도체 장치의 제조 방법으로서, 상기 언더필 필름은, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물로 이루어지는 주조성물을 함유하고, 상기 아크릴 폴리머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유되며, 상기 말레이미드 화합물은, 상기 주조성물의 100질량부 중에 20질량부 이상 70질량부 이하의 범위로 함유된 반도체 장치의 제조 방법이다.The present invention provides a method of manufacturing a semiconductor device in which an underfill film is disposed between a surface on which a bump of a semiconductor chip is provided and a surface of a circuit board, and the semiconductor chip is bonded to the circuit board by the underfill film. As the underfill film, a cast product comprising an acrylic polymer, an acrylic monomer, and a maleimide compound is contained, and the acrylic polymer is contained in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product. The said maleimide compound is a manufacturing method of the semiconductor device contained in the range of 20 mass parts or more and 70 mass parts or less in 100 mass parts of the said casting products.

본 발명은, 상기 반도체 칩과 상기 회로 기판의 사이에 상기 언더필 필름이 배치된 상태로 상기 반도체 칩을 가열하면서 상기 회로 기판에 압압(押壓)하여, 상기 반도체 칩과 상기 회로 기판의 사이에 위치하는 상기 언더필 필름의 일부를 상기 반도체 칩과 상기 회로 기판의 사이로부터 밀어내어, 상기 반도체 칩의 범프를 상기 회로 기판의 기판 전극에 접촉시키는 가고정 공정과, 상기 가고정 공정에서 승온된 온도보다 높은 온도로 상기 반도체 칩과 상기 회로 기판과 상기 언더필 필름을 승온시켜, 상기 범프를 용융시킨 후, 상기 반도체 칩과 상기 언더필 필름과 상기 회로 기판을 강온시켜, 용융된 상기 범프를 상기 기판 전극과 접촉한 상태로 고화시키는 탑재 공정을 갖는 반도체 장치의 제조 방법이다.The present invention is pressed between the semiconductor chip and the circuit board while heating the semiconductor chip while the underfill film is disposed between the semiconductor chip and the circuit board, and positioned between the semiconductor chip and the circuit board. A part of the underfill film to be pushed out from between the semiconductor chip and the circuit board to bring the bumps of the semiconductor chip into contact with the substrate electrodes of the circuit board, and a temperature higher than the temperature elevated in the temporary fixing step. After heating the semiconductor chip, the circuit board and the underfill film at a temperature to melt the bumps, the semiconductor chip, the underfill film and the circuit board were lowered to bring the molten bump into contact with the substrate electrode. It is a manufacturing method of the semiconductor device which has a mounting process which solidifies in a state.

본 발명에 이용된 말레이미드 화합물과 아크릴 모노머는, 가열이나 자외선 조사에 의해 공중합 반응을 진행시켜 공중합체를 형성할 수 있다. 아크릴 폴리머와 공중합체는 폴리머 상용성이 있으며, 장기간 성능 열화가 없는 안정된 언더필재와 언더필 필름을 얻을 수 있다.The maleimide compound and the acrylic monomer used in the present invention can advance a copolymerization reaction by heating or ultraviolet irradiation to form a copolymer. Acrylic polymers and copolymers have polymer compatibility, and stable underfill materials and underfill films without performance degradation for a long time can be obtained.

말레이미드 화합물과 아크릴 모노머의 공중합체는 내열성이 우수하며, 또, 공중합체와 반도체 칩 사이의 밀착력이나, 공중합체와 회로 기판 사이의 밀착력도 높기 때문에 반도체 칩의 박리가 없다.Since the copolymer of a maleimide compound and an acrylic monomer is excellent in heat resistance, and the adhesive force between a copolymer and a semiconductor chip and the adhesive force between a copolymer and a circuit board are also high, there is no peeling of a semiconductor chip.

본 발명에 의하면, 언더필재는 가열에 의해 유동화하여, 압압력이 작은 실장을 행할 수 있다. 또, 공중합 반응이 기포를 발생시키지 않으므로, 반도체 칩과 회로 기판의 사이에 기포를 포함시키지 않고 반도체 칩을 탑재할 수 있다.According to the present invention, the underfill material can be fluidized by heating, and mounting with a small pressing force can be performed. Moreover, since a copolymerization reaction does not generate | occur | produce a bubble, a semiconductor chip can be mounted without including a bubble between a semiconductor chip and a circuit board.

도 1은, 다이싱 필름에 지그와 웨이퍼를 붙인 상태를 설명하기 위한 사시도이다.
도 2는, 웨이퍼 상에 언더필 필름을 붙이는 공정의 일례를 설명하기 위한 사시도이다.
도 3은, 웨이퍼를 다이싱하는 공정의 일례를 설명하기 위한 사시도이다.
도 4는, 반도체 칩을 회로 기판에 탑재하는 공정의 일례를 모식적으로 나타낸 사시도이다.
도 5는, 픽업 공정을 설명하기 위한 사시도이다.
도 6은, 반도체 장치의 사시도이다.
도 7(a)는 조성물을 도포하는 공정을 설명하기 위한 단면도이며, 그 도 (b)는 도포된 조성물층을 건조시키는 공정을 설명하기 위한 단면도이다.
도 8(a)~(d)는 반도체 장치를 제조하는 공정을 설명하기 위한 단면도이다.
도 9(a)~(d)는 탑재 공정을 설명하기 위한 단면도이다.1: is a perspective view for demonstrating the state which stuck the jig and the wafer to the dicing film.
It is a perspective view for demonstrating an example of the process of sticking an underfill film on a wafer.
3 is a perspective view for explaining an example of a step of dicing a wafer.
4 is a perspective view schematically showing an example of a step of mounting a semiconductor chip on a circuit board.
5 is a perspective view for explaining a pickup process.
6 is a perspective view of a semiconductor device.
FIG.7 (a) is sectional drawing for demonstrating the process of apply | coating a composition, FIG. (B) is sectional drawing for demonstrating the process of drying the apply | coated composition layer.
8A to 8D are cross-sectional views for explaining a step of manufacturing a semiconductor device.
9 (a) to 9 (d) are cross-sectional views for explaining the mounting process.

이하, 본 발명의 실시형태에 대해 상세하게 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail.

＜언더필재＞<Underfill material>

본 발명의 언더필재는 언더필 필름을 구성하는 재료이며, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물을 포함하는 주조성물을 함유하고 있다.The underfill material of this invention is a material which comprises an underfill film, and contains the cast material containing an acrylic polymer, an acryl monomer, and a maleimide compound.

［아크릴 폴리머］[Acrylic polymer]

아크릴 폴리머는, (메타)아크릴레이트 성분에 유래하는 구성 단위를 포함하는 폴리머이며, 언더필재의 택성이 너무 강해지지 않고, 반도체의 실장 공정에서 작업성을 해칠 우려가 적은 것이 바람직하다. (메타)아크릴레이트 성분으로서는, 예를 들면, 메틸(메타)아크릴레이트, 에틸(메타)아크릴레이트, 부틸(메타)아크릴레이트, 이소부틸(메타)아크릴레이트, tert-부틸(메타)아크릴레이트, 부톡시에틸(메타)아크릴레이트, 이소아밀(메타)아크릴레이트, 헥실(메타)아크릴레이트, 2-에틸헥실(메타)아크릴레이트, 헵틸(메타)아크릴레이트, 옥틸헵틸(메타)아크릴레이트, 노닐(메타)아크릴레이트, 데실(메타)아크릴레이트, 운데실(메타)아크릴레이트, 라우릴(메타)아크릴레이트 등을 이용할 수 있다.An acrylic polymer is a polymer containing the structural unit derived from a (meth) acrylate component, It is preferable that the tackiness of an underfill material does not become strong too much, and there is little possibility that it may damage workability in the mounting process of a semiconductor. As the (meth) acrylate component, for example, methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, Butoxyethyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octylheptyl (meth) acrylate, nonyl (Meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, lauryl (meth) acrylate, etc. can be used.

아크릴 폴리머는, 상술한 (메타)아크릴레이트 성분 이외에, 상술한 (메타)아크릴레이트 성분과 공중합 가능한 다른 모노머 성분에 대응하는 구성 단위를 더 포함하고 있어도 된다. 다른 모노머 성분으로서는, 예를 들면, 카복실기 함유 모노머(예를 들면, (메타)아크릴산), 에폭시기 함유 모노머(예를 들면, 글리시딜(메타)아크릴레이트), 니트릴기 함유 모노머(예를 들면, 아크릴로니트릴 등)를 이용할 수 있다.The acrylic polymer may further include the structural unit corresponding to the other monomer component copolymerizable with the above-mentioned (meth) acrylate component other than the above-mentioned (meth) acrylate component. As another monomer component, for example, a carboxyl group-containing monomer (for example, (meth) acrylic acid), an epoxy group-containing monomer (for example, glycidyl (meth) acrylate), a nitrile group-containing monomer (for example , Acrylonitrile and the like) can be used.

예를 들면, 아크릴 폴리머로서는, 부틸아크릴레이트, 메틸아크릴레이트, 아크릴산, 글리시딜메타크릴레이트 및 아크릴로니트릴에 대응하는 구성 단위를 포함하는 것을 이용할 수 있다.For example, as an acrylic polymer, the thing containing the structural unit corresponding to butyl acrylate, methyl acrylate, acrylic acid, glycidyl methacrylate, and acrylonitrile can be used.

아크릴 폴리머는, 상술한 (메타)아크릴레이트 성분이나 다른 모노머 성분을 중합함으로써 얻을 수 있다. 중합 방법은, 용액 중합, 유화 중합, 괴상 중합, 현탁 중합 등을 들 수 있다. 아크릴 폴리머의 중합 반응의 종류로서는, 예를 들면, 라디칼 중합, 양이온 중합, 음이온 중합, 리빙 라디칼 중합, 리빙 양이온 중합, 리빙 음이온 중합, 배위 중합 등을 들 수 있다.An acrylic polymer can be obtained by polymerizing the above-mentioned (meth) acrylate component and another monomer component. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, suspension polymerization, and the like. As a kind of polymerization reaction of an acrylic polymer, radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anion polymerization, coordination polymerization, etc. are mentioned, for example.

아크릴 폴리머의 중량 평균 분자량(Mw)은, 특별히 제한되지 않지만, 예를 들면, 100000 이상 1200000 이하의 범위에 포함되도록 할 수 있으며, 500000 이상 1000000 이하의 범위에 포함되도록 할 수도 있다.Although the weight average molecular weight (Mw) of an acrylic polymer is not specifically limited, For example, it can be contained in the range of 100000 or more and 1200000 or less, and can also be contained in the range of 500000 or more and 1000000 or less.

언더필재 중의 아크릴 폴리머와 아크릴 모노머와 말레이미드 화합물을 주조성물이라고 칭하기로 하면, 아크릴 폴리머는, 100질량부의 주조성물 중에, 10질량부 이상 60질량부 이하의 범위로 함유되고, 바람직하게는 10질량부 이상 45질량부 이하의 범위로 함유되며, 더욱 바람직하게는 15질량부 이상 40질량부 이하의 범위로 함유된다. 아크릴 폴리머의 함유량이 10질량부 미만이면, 보이드의 배제가 곤란해지는 경향이 있다. 또, 아크릴 폴리머의 함유량이 60질량부를 초과하면, 저압 실장을 실현하는 것이 곤란한 경향이 있으며, 접속성도 악화되는 경향이 있다.When the acrylic polymer in the underfill material, an acrylic monomer, and a maleimide compound are called a cast product, an acrylic polymer is contained in 100 mass parts of cast products in the range of 10 mass parts or more and 60 mass parts or less, Preferably it is 10 mass parts It is contained in the range of 45 parts by mass or more and more preferably 15 parts by mass or more and 40 parts by mass or less. When content of an acrylic polymer is less than 10 mass parts, there exists a tendency for removal of a void to become difficult. Moreover, when content of an acrylic polymer exceeds 60 mass parts, it exists in the tendency which is difficult to implement low pressure mounting, and also there exists a tendency for connection property to deteriorate.

아크릴 폴리머는, 1종류의 아크릴 폴리머를 단독으로 주조성물에 함유시켜도 되고, 2종류 이상의 아크릴 폴리머를 병용하여 함유시켜도 된다. 아크릴 폴리머를 2종류 이상 병용하는 경우, 언더필재 중의 아크릴 폴리머의 함유량의 합계는, 상술한 범위 내가 바람직하다.An acrylic polymer may be contained in a cast product individually by 1 type, and may contain and use two or more types of acrylic polymers together. When using two or more types of acrylic polymers together, the sum total of content of the acrylic polymer in an underfill material has preferable inside of the range mentioned above.

［아크릴 모노머］[Acrylic monomer]

아크릴 모노머로서는, 단관능 (메타)아크릴레이트, 2관능 이상의 (메타)아크릴레이트를 이용할 수 있다. 아크릴 모노머로서는, 예를 들면, 이소시아누르산 EO 변성 디아크릴레이트(토아 합성 주식회사제), 이소시아누르산 EO 변성 트리아크릴레이트(토아 합성 주식회사제), 디펜타에리스리톨 및 테트라아크릴레이트(토아 합성 주식회사제), 2-히드록시-3-페녹시프로필아크릴레이트(토아 합성 주식회사제), 9,9-비스[4-(2-아크릴로일옥시에톡시)페닐]플루오렌(신나카무라 화학 공업 주식회사제), 트리시클로데칸디메탄올디아크릴레이트(신나카무라 화학 공업 주식회사제), 에톡시화 비스페놀 A 디아크릴레이트(신나카무라 화학 공업 주식회사제), 플루오렌계 아크릴레이트(예를 들면, 제품명 : 오그솔 EA0200, EA0300, 오사카 가스 케미컬 주식회사제) 등을 들 수 있다. 이들 아크릴 모노머 중에서도, 내열성 등을 고려하면, 고내열성인 플루오렌계 아크릴레이트가 바람직하다.As an acryl monomer, monofunctional (meth) acrylate and (meth) acrylate more than bifunctional can be used. Examples of the acrylic monomer include isocyanuric acid EO-modified diacrylate (manufactured by Toa Synthetic Co., Ltd.), isocyanuric acid EO-modified triacrylate (manufactured by Toa Synthetic Co., Ltd.), dipentaerythritol, and tetraacrylate (toa synthesis). Corporation), 2-hydroxy-3-phenoxypropyl acrylate (made by Toa Synthetic Co., Ltd.), 9,9-bis [4- (2-acryloyloxyethoxy) phenyl] fluorene (Shin-Nakamura Chemical Industry Co., Ltd.) Corporation), tricyclodecane dimethanol diacrylate (made by Shin-Nakamura Chemical Industry Co., Ltd.), ethoxylated bisphenol A diacrylate (made by Shin-Nakamura Chemical Industry Co., Ltd.), fluorene acrylate (for example, product name: Ogg Sole EA0200, EA0300, and Osaka Gas Chemical Co., Ltd.) etc. are mentioned. Among these acrylic monomers, in consideration of heat resistance and the like, a high heat resistance fluorene acrylate is preferable.

언더필재 중의 아크릴 모노머는, 100질량부의 주조성물 중에서, 10질량부 이상 60질량부 이하의 범위로 함유되고, 바람직하게는 10질량부 이상 55질량부 이하의 범위로 함유되며, 보다 바람직하게는 10질량부 이상 50질량부 이하의 범위로 함유되도록 할 수 있다. 아크릴 모노머의 함유량이 10질량부 미만이면, 접속성이 악화되는 경향이 있다. 또, 아크릴 모노머의 함유량이 60질량부를 초과하면, 보이드의 배제가 곤란해지는 경향이 있다.The acrylic monomer in the underfill material is contained in a range of 10 parts by mass to 60 parts by mass in a cast product of 100 parts by mass, preferably 10 parts by mass or more and 55 parts by mass or less, more preferably 10 It can be made to contain in the range of 50 mass parts or more and 50 mass parts or less. If content of an acrylic monomer is less than 10 mass parts, there exists a tendency for connection property to deteriorate. Moreover, when content of an acrylic monomer exceeds 60 mass parts, there exists a tendency for removal of a void to become difficult.

아크릴 모노머는, 1종류의 아크릴 모노머를 단독으로 함유시켜도 되고, 2종류 이상의 아크릴 모노머를 병용하여 함유시켜도 된다. 아크릴 모노머를 2종류 이상 병용하는 경우, 언더필재 중의 아크릴 모노머의 함유량의 합계는, 상술한 범위 내가 바람직하다.An acrylic monomer may contain one type of acryl monomer independently, and may contain and use two or more types of acryl monomers together. When using two or more types of acrylic monomers together, the sum total of content of the acrylic monomer in an underfill material has preferable inside of the range mentioned above.

［말레이미드 화합물］[Maleimide compound]

말레이미드 화합물로서는, 예를 들면, 1분자 중에 말레이미드기를 2개 이상 갖는 화합물을 이용할 수 있으며, 비스말레이미드가 바람직하다. 말레이미드 화합물로서는, 예를 들면, 4-메틸-1,3-페닐렌비스말레이미드, 4,4-비스말레이미드디페닐메탄, m-페닐렌비스말레이미드, 비스페놀 A 디페닐에테르비스말레이미드, 3,3'-디메틸-5,5'-디에틸-4,4'-디페닐메탄비스말레이미드 등을 들 수 있다. 이들 중에서도, 방향족 비스말레이미드가 바람직하고, 특히, 언더필 필름의 제조 공정에 있어서의 작업성을 고려하면, 용제 용해성이나 플로우성이 양호한 3,3'-디메틸-5,5'-디에틸-4,4'-디페닐메탄비스말레이미드가 바람직하다.As a maleimide compound, the compound which has two or more maleimide groups in 1 molecule can be used, for example, bismaleimide is preferable. As a maleimide compound, 4-methyl-1, 3-phenylene bis maleimide, 4, 4-bis maleimide diphenylmethane, m-phenylene bis maleimide, bisphenol A diphenyl ether bis maleimide, for example And 3,3'-dimethyl-5,5'-diethyl-4,4'-diphenylmethanebismaleimide. Among these, aromatic bismaleimide is preferable, and in consideration of workability in the manufacturing process of the underfill film, in particular, 3,3'-dimethyl-5,5'-diethyl-4 having good solvent solubility and flowability , 4'-diphenylmethanebismaleimide is preferred.

언더필재 중의 말레이미드 화합물은, 100질량부의 주조성물 중에서, 20질량부 이상 70질량부 이하의 범위로 함유되고, 바람직하게는 20질량부 이상 60질량부 이하의 범위로 함유되며, 보다 바람직하게는 20질량부 이상 55질량부 이하의 범위로 함유된다. 말레이미드 화합물의 함유량이 20질량부 미만이면, 저압 실장을 실현하는 것이 곤란한 경향이 있으며, 접속성도 악화되는 경향이 있다. 또, 말레이미드 화합물의 함유량이 70질량부를 초과하면, 저압 실장 및 보이드리스 실장이 곤란해지는 경향이 있다.The maleimide compound in the underfill material is contained in a range of 20 parts by mass to 70 parts by mass in a cast product of 100 parts by mass, preferably contained in a range of 20 parts by mass to 60 parts by mass, more preferably. It is contained in the range of 20 mass parts or more and 55 mass parts or less. When content of a maleimide compound is less than 20 mass parts, it exists in the tendency which is difficult to implement low pressure mounting, and there exists a tendency for connection property to deteriorate. Moreover, when content of a maleimide compound exceeds 70 mass parts, there exists a tendency for low pressure mounting and voidless mounting to become difficult.

언더필재에 이용하는 조성물은, 목적에 따라, 상술한 주조성물을 구성하는 성분 이외의 다른 성분을 더 함유해도 된다. 다른 성분으로서는, 예를 들면, 페놀 화합물, 필러 등을 들 수 있다.The composition used for an underfill material may further contain other components other than the component which comprises the cast product mentioned above according to the objective. As another component, a phenol compound, a filler, etc. are mentioned, for example.

［페놀 화합물］[Phenol compound]

페놀 화합물은, 상술한 말레이미드 화합물용의 경화제로서 이용할 수 있지만, 페놀을 함유하지 않아도 열경화 반응을 개시시킬 수 있다. 페놀 화합물로서는, 예를 들면, 알릴화 비스페놀을 이용할 수 있으며, 구체적으로는, 2,2'-디알릴 비스페놀 A(제품명 : DABPA), 4,4'-(디메틸메틸렌)비스[2-(2-프로페닐)페놀], 4,4'-메틸렌비스[2-(2-프로페닐)페놀], 4,4'-(디메틸메틸렌)비스[2-(2-프로페닐)-6-메틸페놀］등을 이용할 수 있다. 이들 중에서도, 2,2'-디알릴 비스페놀 A가 바람직하다.Although a phenol compound can be used as a hardening | curing agent for maleimide compounds mentioned above, a thermosetting reaction can be started even if it does not contain a phenol. As the phenolic compound, for example, allylated bisphenol can be used, and specifically, 2,2'-diallyl bisphenol A (product name: DABPA), 4,4 '-(dimethylmethylene) bis [2- (2 -Propenyl) phenol], 4,4'-methylenebis [2- (2-propenyl) phenol], 4,4 '-(dimethylmethylene) bis [2- (2-propenyl) -6-methylphenol ] Etc. can be used. Among these, 2,2'- diallyl bisphenol A is preferable.

페놀 화합물을 함유시키는 경우의 페놀 화합물의 함유량은, 예를 들면, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물과, 페놀 화합물의 합계 100질량부에 대해 15질량부 이하로 할 수 있다. 페놀 화합물은, 1종류의 페놀 화합물을 단독으로 함유시켜도 되고, 2종류 이상의 페놀 화합물을 병용하여 함유시켜도 된다. 페놀 화합물을 2종류 이상 병용하는 경우, 언더필재 중의 페놀 화합물의 함유량의 합계는, 상술한 범위 내가 바람직하다.Content of a phenol compound in the case of containing a phenol compound can be 15 mass parts or less with respect to a total of 100 mass parts of an acrylic polymer, an acryl monomer, a maleimide compound, and a phenol compound, for example. A phenol compound may contain one type of phenol compounds independently, and may contain and use two or more types of phenol compounds together. When using two or more types of phenol compounds together, the sum total of content of the phenol compound in an underfill material has preferable inside of the range mentioned above.

［필러］[filler]

필러로서는, 무기 충전제, 유기 충전제, 도전성 입자 등을 이용할 수 있다. 특히, 선팽창률의 저감이나 신뢰성 향상의 관점에서, 무기 충전제(예를 들면 실리카 필러)를 이용하는 것이 바람직하다.As a filler, an inorganic filler, an organic filler, electroconductive particle, etc. can be used. In particular, it is preferable to use an inorganic filler (for example, a silica filler) from the viewpoint of reducing the linear expansion coefficient and improving the reliability.

필러를 이용하는 경우, 필러의 함유량은, 예를 들면, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물과, 필러의 합계 100질량부에 대해 30질량부 이하로 할 수 있다. 필러는, 1종류의 필러를 단독으로 함유시켜도 되고, 2종류 이상의 필러를 병용하여 함유시켜도 된다. 필러를 2종류 이상 병용하는 경우, 언더필재 중의 필러의 함유량의 합계는, 상술한 범위 내가 바람직하다.When using a filler, content of a filler can be 30 mass parts or less with respect to a total of 100 mass parts of an acrylic polymer, an acrylic monomer, a maleimide compound, and a filler, for example. A filler may contain one type of filler independently and may contain two or more types of fillers together. When using two or more types of fillers together, the sum total of content of the filler in an underfill material has preferable inside of the range mentioned above.

이상과 같이, 본 실시형태에 따른 언더필재는 주조성물을 함유하며, 100질량부의 주조성물 중에는, 아크릴 폴리머가, 10질량부 이상 60질량부 이하의 범위로 함유되도록 한다. 또한, 언더필재는, 말레이미드 화합물이, 주조성물의 100질량부에 대해, 20질량부 이상 70질량부 이하의 범위로 함유되도록 한다. 아크릴 모노머는, 100질량부의 주조성물 중에서, 10질량부 이상 60질량부 이하의 범위로 함유되도록 할 수 있다.As mentioned above, the underfill material which concerns on this embodiment contains a cast material, and in 100 mass parts of cast products, an acrylic polymer is contained in the range of 10 mass parts or more and 60 mass parts or less. In addition, an underfill material is made to contain a maleimide compound in the range of 20 mass parts or more and 70 mass parts or less with respect to 100 mass parts of castings. An acrylic monomer can be contained in 100 mass parts of castings in the range of 10 mass parts or more and 60 mass parts or less.

이러한 언더필재를 이용함으로써, 저압 실장 및 보이드리스 실장을 실현할 수 있으며, 접속성을 양호하게 할 수 있다. 또, 저압 실장의 실현에 의해, 칩의 저휨화나, 실장 시에 땜납이 흘러 버리는 현상을 억제할 수 있다. 또, 칩의 다핀(다범프)화에 대해, 범용 본더의 압압력으로 대응할 수 있다. 또한, 저압 실장 및 보이드리스 실장을 실현하기 위해, 예를 들면, 언더필재를 저탄성률화(저점도화)하는 방법도 생각할 수 있다. 그러나, 이 방법에서는 보이드의 제거성이 악화되는 경향이 있다.By using such an underfill material, low pressure mounting and voidless mounting can be implement | achieved and connection can be made favorable. Moreover, the realization of low pressure mounting can reduce the chip | tip of chip | tip and the phenomenon which a solder flows at the time of mounting can be suppressed. In addition, it is possible to cope with the multi-pinning of the chip by the pressure of the general-purpose bonder. In addition, in order to realize low pressure mounting and voidless mounting, for example, a method of low elastic modulus (low viscosity) of the underfill material can be considered. However, in this method, the void removal tends to deteriorate.

상술한 언더필재는, 예를 들면 언더필재가 막상으로 형성된 언더필 필름으로서 이용할 수 있다. 이러한 언더필 필름의 제조 방법의 일례에 대해 설명한다. 우선, 상술한 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물을 포함하는 조성물을, 용제에 용해시켜, 언더필재를 제작한다. 용제는, 예를 들면, 톨루엔, 아세트산에틸, 또는 이들의 혼합 용제 등을 이용할 수 있다.The underfill material mentioned above can be used, for example as an underfill film in which the underfill material was formed in the film form. An example of the manufacturing method of such an underfill film is demonstrated. First, the composition containing the above-mentioned acrylic polymer, an acrylic monomer, and a maleimide compound is melt | dissolved in a solvent, and an underfill material is produced. Toluene, ethyl acetate, these mixed solvents, etc. can be used for a solvent, for example.

다음에, 제작한 언더필재를 박리 기재 상에 도포한다. 도 7(a)의 부호 22는 박리 기재이며, 도포에 의해 형성된 막상의 언더필재층(18)이 형성되어 있다. 언더필재의 도포는, 예를 들면 코팅 장치를 이용하여 행할 수 있다. 박리 기재(22)는, 예를 들면, 실리콘 등의 박리제를 PET(Poly Ethylene Terephthalate), OPP(Oriented Polypropylene), PMP(Poly-4-methlpentene-1), PTFE(Polytetrafluoroethylene) 등에 도포한 적층 구조로 이루어지며, 조성물의 건조를 방지함과 더불어, 조성물의 형상을 유지한다.Next, the produced underfill material is apply | coated on a peeling base material. Reference numeral 22 in FIG. 7A is a release substrate, and a film-like underfill material layer 18 formed by coating is formed. Application of an underfill material can be performed using a coating apparatus, for example. The release substrate 22 is, for example, in a laminated structure in which a release agent such as silicone is applied to a poly ethylene terephthalate (PET), an oriented polypropylene (OPP), a poly-4-methlpentene-1 (PMP), a polytetrafluoroethylene (PTFE), or the like. And prevents drying of the composition, while maintaining the shape of the composition.

다음에, 박리 기재(22) 상에 도포된 언더필재층(18)을, 열 오븐, 가열 건조 장치 등에 의해 건조시킨다. 이에 따라, 도 7(b)에 나타낸 바와 같이, 박리 기재(22)의 표면에 소정 두께의 언더필 필름(12)이 형성된다.Next, the underfill material layer 18 apply | coated on the peeling base material 22 is dried by a heat oven, a heat drying apparatus, etc. As a result, as shown in FIG. 7B, an underfill film 12 having a predetermined thickness is formed on the surface of the release substrate 22.

본 실시형태에 따른 언더필재를 이용한 언더필 필름(12)은, 상온(5℃ 이상 35℃ 이하 : JIS Z 8703)에서 고체이므로, 장치 오염이나 두께의 불균일화 등이 발생하는 것을 억제할 수 있으며, 취급이 용이해짐과 더불어, 접착 신뢰성도 양호하다. 한편, 상술한 특허문헌 2, 3에 기재된 기술에서는, 상온에서 액체의 경화성 수지를 이용하고 있으므로, 장치 오염이나 두께의 불균일화 등이 발생하여, 취급하기 곤란한 경향이 있다. 또, 상술한 특허문헌 2, 3에 기재된 기술에서는, 반도체 소자를 개편화(個片化)하기 위한 다이싱 공정에 있어서, 접착제가 비산·변형되어 버려, 접착 신뢰성이 손상된다.Since the underfill film 12 using the underfill material which concerns on this embodiment is solid at normal temperature (5 degreeC or more and 35 degrees C or less: JIS Z 8703), it can suppress that apparatus contamination, thickness nonuniformity, etc. generate | occur | produce, In addition to being easy to handle, the adhesion reliability is also good. On the other hand, in the above-described techniques described in Patent Documents 2 and 3, since the liquid curable resin is used at normal temperature, device contamination, unevenness in thickness, etc. occur, and it tends to be difficult to handle. Moreover, in the technique of patent document 2, 3 mentioned above, in the dicing process for individualizing a semiconductor element, an adhesive agent scatters and deforms, and adhesive reliability is impaired.

또, 본 실시형태에 따른 언더필 필름(12)은, 경화 전 상태에서의 인장 파단 강도의 값이 0.01MPa 이상 5.0MPa 이하의 범위에 포함되도록 할 수 있으며, 0.1MPa 이상 3.0MPa 이하의 범위에 포함되도록 할 수도 있으며, 또, 0.3MPa 이상 1.0MPa 이하의 범위에 포함되도록 할 수도 있다. 인장 파단 강도는, 후술하는 필름 파단 강도의 평가 방법으로 측정한 값을 말한다.Moreover, the underfill film 12 which concerns on this embodiment can make the value of the tensile strength at break in the state before hardening be contained in the range of 0.01 MPa or more and 5.0 MPa or less, and includes it in the range of 0.1 MPa or more and 3.0 MPa or less. In addition, it may be included in the range of 0.3MPa or more and 1.0MPa or less. Tensile breaking strength says the value measured by the evaluation method of the film breaking strength mentioned later.

＜반도체 장치의 제조 방법＞<Method for Manufacturing Semiconductor Device>

다음에, 상술한 언더필 필름(12)을 이용한 반도체 장치의 제조 방법의 일례에 대해 설명한다. 반도체 장치의 제조 방법은, 예를 들면, 웨이퍼 상에 언더필 필름(12)을 붙여, 웨이퍼를 다이싱하여, 반도체 칩을 픽업하여, 반도체 칩을 회로 기판에 탑재하는 것이다.Next, an example of the manufacturing method of the semiconductor device using the underfill film 12 mentioned above is demonstrated. In the manufacturing method of a semiconductor device, for example, the underfill film 12 is stuck on a wafer, the wafer is diced, the semiconductor chip is picked up, and the semiconductor chip is mounted on a circuit board.

도 1의 부호 13은, 링형 형상의 틀체인 지그이며, 지그(13)의 이면에는 다이싱 필름(21)이 붙여져 있다. 지그(13)의 링형 형상의 내측에는, 다이싱 필름(21)의 접착면이 노출되어 있다. 지그(13)의 내측의 다이싱 필름(21) 상에는, 지그(13)의 내주보다 소경의 웨이퍼(11)가 붙여져 웨이퍼(11)가 지그(13)에 고정되어 있다. 지그(13)와 웨이퍼(11)는 다이싱 필름(21)에 붙여진 상태로 받침대(20) 상에 배치되어 있다.Reference numeral 13 in FIG. 1 denotes a jig which is a ring-shaped frame, and a dicing film 21 is attached to the rear surface of the jig 13. The adhesive surface of the dicing film 21 is exposed inside the ring shape of the jig 13. On the dicing film 21 inside the jig 13, a wafer 11 smaller in diameter than the inner circumference of the jig 13 is pasted, and the wafer 11 is fixed to the jig 13. The jig 13 and the wafer 11 are arrange | positioned on the base 20 in the state stuck to the dicing film 21. As shown in FIG.

도 8(a)는, 다이싱 필름(21)과 웨이퍼(11)의 단면도이며, 웨이퍼(11)에는, 복수의 IC(Integrated Circuit)의 회로부(4)가 형성되어 있고, 각 회로부(4)는, 스크라이브 라인(10)에 의해 구분되어 있다. FIG. 8A is a cross-sectional view of the dicing film 21 and the wafer 11, in which a circuit portion 4 of a plurality of integrated circuits (ICs) is formed on the wafer 11, and each circuit portion 4 is formed. Are separated by the scribe lines 10.

회로부(4)의 소정 장소의 표면 상에는, 회로부(4)에 형성된 전기 회로와 전기적으로 접속된 범프(6)가 설치되어 있다. 회로부(4)의 내부의 전자 회로 중, 범프(6)에 접속되는 부분 이외의 개소는, 절연막(5)에 의해 범프(6)와 절연되어 있다. 도 1~도 5에서는, 범프(6)와 스크라이브 라인(10)은 생략되어 있다.On the surface of the predetermined part of the circuit part 4, the bump 6 electrically connected with the electrical circuit formed in the circuit part 4 is provided. In the electronic circuit inside the circuit part 4, portions other than the part connected to the bump 6 are insulated from the bump 6 by the insulating film 5. In FIGS. 1-5, the bump 6 and the scribe line 10 are abbreviate | omitted.

이러한 웨이퍼(11)의 2개의 표면 중, 범프(6)가 형성된 표면에 언더필 필름(12)이 붙여진다. The underfill film 12 is stuck to the surface in which the bump 6 was formed among these two surfaces of the wafer 11.

도 2의 부호 19는, 필름상의 박리 기재(22)와, 박리 기재(22)에 접착된 언더필 필름(12)으로 이루어지는 박리지가 부착된 언더필 필름(23)이 감겨진 롤러이며, 이 롤러(19)로부터 박리지가 부착된 언더필 필름(23)을 풀어, 언더필 필름(12)이 노출된 면을 지그(13)와 웨이퍼(11)에 접촉시켜 압압하여, 언더필 필름(12)을 웨이퍼(11)에 붙인다. 도 8(b)는, 다이싱 필름(21)과 박리지가 부착된 언더필 필름(23)이 붙여진 웨이퍼(11)의 단면도이다.Reference numeral 19 in FIG. 2 denotes a roller on which a film-like release substrate 22 and an underfill film 23 with release paper composed of an underfill film 12 adhered to the release substrate 22 are wound. ), The underfill film 23 with release paper attached thereto is released, and the surface on which the underfill film 12 is exposed is brought into contact with the jig 13 and the wafer 11 to press the underfill film 12 to the wafer 11. Attach. 8B is a cross-sectional view of the wafer 11 to which the dicing film 21 and the underfill film 23 with release paper are attached.

또한, 다이싱 필름(21)을 대신하여 웨이퍼(11)의 이면에 언더필 필름(12)을 접착시켜, 언더필 필름(12)을, 웨이퍼(11)의 다이싱 시에 웨이퍼(11)를 보호·고정하고, 픽업 시에 유지하는 다이싱 필름으로서 기능시킬 수도 있다.In addition, the underfill film 12 is adhered to the back surface of the wafer 11 instead of the dicing film 21 to protect the wafer 11 when the underfill film 12 is diced. It can also function as a dicing film fixed and held at the time of pick-up.

도 8(c)는, 웨이퍼(11)에 붙인 박리지가 부착된 언더필 필름(23)을 절단하여 롤(19)로부터 분리시킨 후, 웨이퍼(11)에 붙인 박리지가 부착된 언더필 필름(23)으로부터 박리 기재(22)를 제거한 상태가 나타나 있으며, 언더필 필름(12)이 붙여진 웨이퍼(11)는, 다이싱 필름(21)에 붙여진 상태로 다이싱 장치의 받침대(33) 상으로 이동되고 있다.8C shows that the underfill film 23 with release paper attached to the wafer 11 is cut and separated from the roll 19, and then the underfill film 23 with release paper attached to the wafer 11 is attached. The state from which the peeling base material 22 was removed is shown, and the wafer 11 to which the underfill film 12 was stuck is moving on the base 33 of the dicing apparatus in the state stuck to the dicing film 21.

다음에, 도 3은, 웨이퍼(11)를 분할하기 위한 다이싱 공정의 일례를 설명하기 위한 사시도이며, 절단 기구(25)에 설치된 원반상의 블레이드(14)를 회전시키면서 언더필 필름(12)의 표면에 접촉시켜, 압압하여 언더필 필름(12)을 절단하면서 블레이드(14)를 강하시켜, 웨이퍼(11)의 스크라이브 라인(10)에 접촉시킨다. 그 상태로부터 추가로 블레이드(14)를 압압하여, 웨이퍼(11)를 언더필 필름(12)과 함께 절단하면서 블레이드(14)를 강하시킨다. 블레이드(14)의 강하는, 웨이퍼(11)를 관통하면 다이싱 필름(21)이 절단되기 전에 정지되며, 웨이퍼(11)의 스크라이브 라인(10)이 형성된 직선상의 장소를, 다이싱 필름(21)과 평행한 상태로 스크라이브 라인(10)을 따라 이동하여 웨이퍼(11)를 절단한다. 부호 26a, 26b는, 웨이퍼(11)의 절단에 의해 형성된 절단면이다.Next, FIG. 3 is a perspective view for explaining an example of a dicing step for dividing the wafer 11, and the surface of the underfill film 12 while rotating the disk-shaped blade 14 provided in the cutting mechanism 25. The blade 14 is lowered while being pressed to cut the underfill film 12 to be pressed into contact with the scribe line 10 of the wafer 11. The blade 14 is further pressed from the state, and the blade 14 is lowered while cutting the wafer 11 together with the underfill film 12. The drop of the blade 14 stops before the dicing film 21 is cut | disconnected when penetrating the wafer 11, and the dicing film 21 places the linear place where the scribe line 10 of the wafer 11 was formed. ) And move along the scribe line 10 in parallel with each other to cut the wafer 11. Reference numerals 26a and 26b denote cut surfaces formed by cutting the wafer 11.

이러한 블레이드(14)에 의한 절단에 의해, 도 4에 나타낸 바와 같이, 복수의 평행한 절단면(26a)과, 그 절단면(26a)과 직각으로 교차하는 복수의 절단면(26b)이 형성되면, 웨이퍼(11)는, 복수의 반도체 칩(15)으로 분할된다. 반도체 칩(15)은, 4개의 절단면(26a, 26b)에 의해 둘러싸여 있으며, 각각 직각사변형 형상의 반도체 칩(15)으로 되어 있다. 도 8(d)은 웨이퍼(11)가 반도체 칩(15)으로 분할된 상태의 단면도이다.By cutting with such a blade 14, as shown in FIG. 4, when the several parallel cutting surface 26a and the several cutting surface 26b which cross | intersect the cutting surface 26a at right angles are formed, a wafer ( 11 is divided into a plurality of semiconductor chips 15. The semiconductor chip 15 is surrounded by four cutting surfaces 26a and 26b, and is each a semiconductor chip 15 having a rectangular quadrangle shape. FIG. 8D is a cross-sectional view of the state in which the wafer 11 is divided into semiconductor chips 15.

언더필 필름(12)은 웨이퍼(11)와 함께 절단되어 있으며, 반도체 칩(15)의 표면에는 절단된 언더필 필름(12)이 붙여져 있다. 각 반도체 칩(15)의 이면은 절단되어 있지 않은 상태의 다이싱 필름(21)에 붙여져 있다.The underfill film 12 is cut | disconnected with the wafer 11, and the cut | disconnected underfill film 12 is stuck to the surface of the semiconductor chip 15. As shown in FIG. The back surface of each semiconductor chip 15 is attached to the dicing film 21 in the state which is not cut | disconnected.

도 5는, 그러한 반도체 칩(15)의 픽업 공정을 설명하기 위한 사시도이다. 픽업 장치(27)의 하단에 설치된 흡착 패드(28)를, 절단된 1개의 반도체 칩(15) 상의 언더필 필름(12)과 접촉시켜, 언더필 필름(12)을 흡착하여, 다이싱 필름(21)의 바닥면 하에 배치된 핀을 상승시키면 핀의 상단이 다이싱 필름(21)을 관통하여 칩(15)의 바닥면과 접촉하여, 핀에 반도체 칩(15)을 위쪽으로 압압시킴과 더불어, 픽업 장치(27)를 위쪽으로 이동시키면 흡착 패드(28)에 흡착된 반도체 칩(15)이 다이싱 필름(21)으로부터 박리되어 위쪽으로 이동된다.5 is a perspective view for explaining a pickup process of such a semiconductor chip 15. The adsorption pad 28 provided in the lower end of the pick-up apparatus 27 is contacted with the underfill film 12 on the cut | disconnected semiconductor chip 15, the underfill film 12 is adsorb | sucked, and the dicing film 21 Raising the pin disposed under the bottom surface of the pin passes through the dicing film 21 to contact the bottom surface of the chip 15, thereby pressing the semiconductor chip 15 upwards, and picking up the pin. When the device 27 is moved upward, the semiconductor chip 15 adsorbed on the suction pad 28 is peeled off from the dicing film 21 and moved upward.

부호 24는, 위쪽으로 이동된 반도체 칩(15)에 의해 형성된 공동이며, 바닥면에는 다이싱 필름(21)이 노출되고, 측면에는 다이싱 필름(21) 상에 위치하는 반도체 칩(15)의 절단면과 언더필 필름(12)의 절단면이 노출되어 있다.Reference numeral 24 denotes a cavity formed by the semiconductor chip 15 moved upwards, the dicing film 21 is exposed on the bottom surface, and the semiconductor chip 15 positioned on the dicing film 21 on the side surface. The cut surface and the cut surface of the underfill film 12 are exposed.

다음에, 반도체 칩(15) 표면의 언더필 필름(12)을, 반도체 칩(15)이 탑재되는 회로 기판의 표면과 대면시켜, 언더필 필름(12)을 회로 기판과 접촉시킨다.Next, the underfill film 12 on the surface of the semiconductor chip 15 faces the surface of the circuit board on which the semiconductor chip 15 is mounted, and the underfill film 12 is brought into contact with the circuit board.

도 9(a)의 부호 16은 반도체 칩(15)이 탑재되는 회로 기판이며, 회로 기판(16)은 기판 본체(35)와 기판 본체(35)의 표면에 설치된 금속 배선(29)을 갖고 있다. 금속 배선(29)의 일부는, 범프(6)와 전기적으로 접속되는 기판 전극(7)으로 되어 있다.Reference numeral 16 in FIG. 9A denotes a circuit board on which the semiconductor chip 15 is mounted, and the circuit board 16 has a substrate main body 35 and a metal wiring 29 provided on the surface of the substrate main body 35. . Part of the metal wiring 29 is a substrate electrode 7 electrically connected to the bump 6.

기판 전극(7)은, 범프(6)가 배치된 패턴에 대응한 위치에 배치되어 있으며, 반도체 칩(15)은, 범프(6)가 언더필 필름(12)을 통해 기판 전극(7)과 대면하도록 위치 맞춤된 후, 언더필 필름(12)과 회로 기판(16)이 접촉되어 있다. 언더필 필름(12)은, 그 일부가 기판 본체(35)와 접촉되고, 다른 일부가 금속 배선(29)에 접촉되어 있다.The board | substrate electrode 7 is arrange | positioned in the position corresponding to the pattern in which the bump 6 was arrange | positioned, and the semiconductor chip 15 faces bump 6 with the board | substrate electrode 7 through the underfill film 12. After being positioned so that the underfill film 12 is in contact with the circuit board 16. A part of the underfill film 12 is in contact with the substrate main body 35, and another part is in contact with the metal wiring 29.

이 때, 범프(6)와 기판 전극(7)의 사이에는 언더필 필름(12)이 위치하고 있으며, 범프(6)와 기판 전극(7)은 비접촉 상태에 있다.At this time, the underfill film 12 is located between the bump 6 and the substrate electrode 7, and the bump 6 and the substrate electrode 7 are in a non-contact state.

다음에, 범프(6)와 기판 전극(7)을 접촉시키는 가고정 공정을 설명하면, 도 9(b)의 부호 32는, 다이본더 장치가 갖는 가열편(32)이며, 가열편(32)은 가열용 전원에 의해 통전되어, 발열하도록 구성되어 있다. 통전에 의해 발열하여, 승온된 가열편(32)을 반도체 칩(15)의 이면에 접촉시켜, 압압하면 반도체 칩(15)이 가열되어, 승온되고, 반도체 칩(15)에 접촉하고 있는 언더필 필름(12)이 가열되어, 승온된다. Next, the temporary fixation step of bringing the bump 6 into contact with the substrate electrode 7 will be described. Reference numeral 32 in FIG. 9B denotes a heating piece 32 included in the die bonder device, and the heating piece 32. Is energized by a heating power supply and configured to generate heat. The underfill film which generates heat by energization, heats up the heated piece 32 to the back surface of the semiconductor chip 15, and pressurizes it, and when it presses, the semiconductor chip 15 is heated and heated up and contacting the semiconductor chip 15. (12) is heated and heated up.

언더필 필름(12)에 함유되는 아크릴 폴리머는 승온되면 연화하는 성질을 갖고 있으며, 승온된 언더필 필름(12)의 점도는, 승온 전의 점도보다 작아진다.The acrylic polymer contained in the underfill film 12 has the property of softening when heated up, and the viscosity of the underfill film 12 heated up becomes smaller than the viscosity before temperature rise.

언더필 필름(12)의 점도가 작아지면, 가열편(32)이 반도체 칩(15)을 압압하는 압압력(「압압력」은 압압하는 힘이며 「하중」이라고도 한다)에 의해, 반도체 칩(15)과 기판 전극(7) 사이의 언더필 필름(12)이, 반도체 칩(15)과 기판 전극(7)과의 사이로부터 반도체 칩(15)의 외측으로 밀려나와, 그 결과, 반도체 칩(15)과 회로 기판(16) 사이의 거리가 작아져, 범프(6)가 기판 전극(7)에 접촉한다.When the viscosity of the underfill film 12 decreases, the semiconductor chip 15 is caused by the pressing force ("pressure pressure" is a force to press and is also called "load") in which the heating piece 32 presses the semiconductor chip 15. ) And the underfill film 12 between the substrate electrode 7 is pushed out of the semiconductor chip 15 from between the semiconductor chip 15 and the substrate electrode 7, and as a result, the semiconductor chip 15 And the distance between the circuit board 16 becomes small, and the bump 6 comes into contact with the substrate electrode 7.

가열편(32)에 의해 반도체 칩(15)을 가열할 때에는, 범프(6)는, 범프(6)가 용융되는 온도보다 저온으로 승온되고 있으며, 따라서 범프(6)는 용융되지 않는다.When heating the semiconductor chip 15 by the heating piece 32, the bump 6 is heated up at a temperature lower than the temperature at which the bump 6 is melted, and therefore the bump 6 is not melted.

언더필 필름(12)은, 주조성물 중의 모노머가 경화 반응을 발생시키는 온도보다 낮은 온도로 승온되고 있지만, 언더필 필름(12)의 표면에는 접착력이 발현되고 있어, 반도체 칩(15)은, 언더필 필름(12)의 접착력에 의해 회로 기판(16)의 표면에 붙여진다.Although the underfill film 12 is heated up at a temperature lower than the temperature at which the monomer in the cast product generates a curing reaction, the adhesive force is expressed on the surface of the underfill film 12, and the semiconductor chip 15 is an underfill film ( It adheres to the surface of the circuit board 16 by the adhesive force of 12).

언더필 필름(12)의 연화에 의한 부착을 가고정 공정이라고 칭하면, 가고정 공정의 온도는 예를 들면 60℃ 이상 150℃ 이하의 온도 범위이다. 또, 반도체 칩(15)과 회로 기판(16)의 사이에 인가하는 압압력의 조건은 인가하는 압압력의 값을, 예를 들면 90N 이하로 할 수 있고, 70N 이하로 할 수도 있으며, 40N 이하로 할 수도 있다.When the adhesion by softening of the underfill film 12 is called a temporary fixation process, the temperature of a temporary fixation process is a temperature range of 60 degreeC or more and 150 degrees C or less, for example. In addition, the condition of the pressure applied between the semiconductor chip 15 and the circuit board 16 may be, for example, 90 N or less, 70 N or less, or 40 N or less. You can also do

또, 가고정을 위해서는 가열 본더에 의한 가열을 하면서 압압력을 인가하는 시간 조건은, 예를 들면, 1초 이상 120초 이하의 시간 범위로 할 수 있다. 이에 따라, 가열 본더가 가열·압력을 인가하는 가고정 공정의 사이에 범프(6)가 용융되지 않고 기판 전극(7)과 접하고 있는 상태로 할 수 있으며, 또한, 언더필 필름(12)이 경화되어 있지 않은 상태로 할 수 있다. 도 9(c)는 가고정된 상태를 나타내고 있다.In addition, for temporary fixation, the time condition of applying a pressing pressure while heating with a heating bonder can be, for example, a time range of 1 second or more and 120 seconds or less. Thereby, the bump 6 can be made into the state which contact | connects the board | substrate electrode 7, without melt | fusing during the temporarily fixing process which a heating bonder applies heating and pressure, and the underfill film 12 hardens | cures You can leave it without. 9C shows a temporarily fixed state.

가고정 공정에서는, 낮은 온도로 반도체 칩(15)을 회로 기판(16)에 가고정하므로, 반도체 칩(15)을 회로 기판(16)에 접착할 때의 보이드의 발생을 억제하여, 반도체 칩(15)에 대한 데미지를 저감할 수 있다.In the temporary fixing step, since the semiconductor chip 15 is temporarily fixed to the circuit board 16 at a low temperature, generation of voids when the semiconductor chip 15 is adhered to the circuit board 16 is suppressed and the semiconductor chip ( 15) damage can be reduced.

가고정 공정 후에는 반도체 칩(15)을 회로 기판(16)에 본고정하는 탑재 공정을 행한다. 범프(6)는 저온에서 용융되는 금속으로 구성되어 있으며, 탑재 공정에서는, 예를 들면 언더필 필름(12)에 의해 가고정된 반도체 칩(15)과 회로 기판(16)을 승온된 리플로우 노(furnace)의 내부에 반입하여, 리플로우 노에 의해 반도체 칩(15)과 언더필 필름(12)과 회로 기판(16)을 가열하여 가고정에서 승온된 온도보다 높은 온도로 승온시켜, 범프(6)를 용융시킨다. 용융된 범프(6)는 기판 전극(7)과 접촉되어 있으며, 접촉한 상태로 리플로우 노에서 빼내어, 강온시키면 범프(6)는, 기판 전극(7)과의 사이에 금속 결합을 형성한 상태로 고화된다. 리플로우 노 중에서는, 승온된 언더필 필름(12)의 조성물은 화학 반응하여, 언더필 필름(12)이 경화하여, 가열된 회로 기판(16)과 반도체 칩(15)이 냉각되면, 반도체 칩(15)이 회로 기판(16)에 고정됨과 더불어, 반도체 칩(15)과 회로 기판(16)이 전기적으로 접속된 반도체 장치가 얻어진다. 도 9(d)의 부호 9는 반도체 장치를 나타내고 있으며, 부호 24는 경화된 언더필 필름을 나타내고 있다. 도 6은 반도체 장치(9)의 사시도이다.After the temporary fixing step, a mounting step of main fixing the semiconductor chip 15 to the circuit board 16 is performed. The bump 6 is made of a metal that is melted at a low temperature, and in the mounting step, for example, the reflow furnace (heating the semiconductor chip 15 and the circuit board 16 temporarily fixed by the underfill film 12) brought into the inside of a furnace, the semiconductor chip 15, the underfill film 12, and the circuit board 16 are heated by a reflow furnace to raise the temperature to a temperature higher than the temperature elevated in the temporary fixing, and the bump 6 Melt. The molten bump 6 is in contact with the substrate electrode 7 and is removed from the reflow furnace in the contacted state, and when the temperature is lowered, the bump 6 forms a metal bond with the substrate electrode 7. Is solidified. In the reflow furnace, when the composition of the heated underfill film 12 is chemically reacted, the underfill film 12 is cured, and the heated circuit board 16 and the semiconductor chip 15 are cooled, the semiconductor chip 15 ) Is fixed to the circuit board 16, and a semiconductor device in which the semiconductor chip 15 and the circuit board 16 are electrically connected is obtained. 9 (d) has shown the semiconductor device, and 24 has shown the hardened underfill film. 6 is a perspective view of the semiconductor device 9.

탑재 공정의 가열 온도 조건은, 땜납 등의 범프에 이용된 금속의 종류에도 의하지만, 예를 들면, 200℃ 이상 280℃ 이하의 온도 범위로 범프(6)를 승온시켜 본고정할 수 있다. 또, 가열 시간의 조건은, 예를 들면, 5초 이상 500초 이하의 시간 범위로 할 수 있다. 범프(6)와 기판 전극(7) 사이의 금속 결합에 의해, 범프(6)와 기판 전극(7)이 전기적, 기계적으로 접속됨과 더불어, 반도체 칩(15)과 회로 기판(16)을 접착한 상태로 언더필 필름(12)이 경화됨으로써, 반도체 칩(15)을 회로 기판(16)에 고정시킴과 더불어 전기적으로 접속시키는 본고정을 행한다.Although the heating temperature conditions of a mounting process are based also on the kind of metal used for bumps, such as solder, it can fix this by raising the bump 6 in the temperature range of 200 degreeC or more and 280 degrees C or less, for example. Moreover, the conditions of a heating time can be made into the time range of 5 second or more and 500 second or less, for example. By the metal bonding between the bump 6 and the substrate electrode 7, the bump 6 and the substrate electrode 7 are electrically and mechanically connected, and the semiconductor chip 15 and the circuit board 16 are bonded together. The underfill film 12 is cured in the state, thereby fixing the semiconductor chip 15 to the circuit board 16 and performing main fixing to electrically connect the semiconductor chip 15.

이와 같이 본 실시형태에 따른 반도체 장치(9)의 제조 방법은, 상술한 언더필 필름(12)을 통해, 범프(6)를 갖는 반도체 칩(15)을 회로 기판(16) 상에 가고정하는 가고정 공정과, 반도체 칩(15)을 회로 기판(16)에 본고정하는 탑재 공정을 갖는다. 가고정 공정과 탑재 공정의 2개의 공정에 의해 반도체 칩(15)을 회로 기판(16)에 탑재하므로, 반도체 칩(15)을 비교적 저압압력(예를 들면 90N 이하)으로 탑재할 수 있다. 즉 저압 실장을 실현할 수 있으므로, 반도체 칩(15)에 대한 데미지를 저감할 수 있다.Thus, the manufacturing method of the semiconductor device 9 which concerns on this embodiment temporarily fixes the semiconductor chip 15 which has the bump 6 on the circuit board 16 via the underfill film 12 mentioned above. And a mounting step of main fixing the semiconductor chip 15 to the circuit board 16. Since the semiconductor chip 15 is mounted on the circuit board 16 by two steps of a temporary fixing step and a mounting step, the semiconductor chip 15 can be mounted at a relatively low pressure (for example, 90 N or less). That is, since the low pressure mounting can be realized, the damage to the semiconductor chip 15 can be reduced.

[실시예]EXAMPLE

이하, 본 발명의 실시예에 대해 설명한다. 또한, 본 발명은 이들 실시예에 한정되는 것은 아니다.EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described. In addition, this invention is not limited to these Examples.

［평가］[evaluation]

본 발명의 언더필재는 언더필 필름을 구성하는 조성물이며, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물을 함유한다.The underfill material of this invention is a composition which comprises an underfill film, and contains an acrylic polymer, an acryl monomer, and a maleimide compound.

본 발명의 실시예의 언더필재의 조성과 평가 결과를 하기 표 1에 기재하며, 비교예의 언더필재의 조성과 평가 결과를 하기 표 2에 기재한다.The composition and evaluation result of the underfill material of the Example of this invention are described in Table 1, and the composition and evaluation result of the underfill material of a comparative example are described in Table 2 below.

［필름 파단 강도］[Film breaking strength]

표 1, 2의 조성으로 제작된 언더필 필름(두께 40μm)을 1cm×3cm의 크기로 절단하여, 인장·압축 시험기(텐실론)로 인장 속도 300mm/min로 언더필 필름을 잡아당겨, 언더필 필름이 파단되었을 때의 하중을 계측하여, 하중/단면적을 파단 강도로서 측정하였다. 실용상, 파단 강도의 값이 0.01MPa 이상 5.0MPa 이하의 범위인 것이 바람직하고, 파단 강도가 이 범위 내인 경우를 합격이라고 평가하고, 그 이외를 불합격이라고 평가하였다.The underfill film (40 micrometers in thickness) produced by the composition of Tables 1 and 2 was cut | disconnected to the magnitude | size of 1 cm x 3 cm, and the underfill film was pulled out by the tension and compression tester (tensilon) at the tensile speed of 300 mm / min, and the underfill film broke The load at the time of the measurement was measured and the load / section area was measured as the breaking strength. In practice, it is preferable that the value of the breaking strength is in the range of 0.01 MPa or more and 5.0 MPa or less, and the case where the breaking strength is in this range was evaluated as pass, and the other was evaluated as fail.

［실장 압압력］[Mounting pressure]

실장 개시로부터 종료까지의 사이에 있어서의, 플립칩 본더의 최대의 압압력(범프수 20000)을, 가고정하는 압압력으로 하였다. 실용상, 가고정하는 압압력은 90N 이하가 바람직하고, 40N 이하가 보다 바람직하다.The maximum pressing pressure (number of bumps 20 000) of the flip chip bonder between the start of mounting and the end was set as the pressing force for temporarily fixing. In practical use, 90 N or less is preferable and 40 N or less of the press pressure to temporarily fix is more preferable.

［보이드］[Void]

초음파 영상 장치(SAT : Scanning Acoustic Tomography)를 이용하여 비파괴에서 보이드의 유무를 평가하였다. 구체적으로는, 260℃의 가열 온도, 표 1, 2에 기재한 압압력으로 반도체 칩을 테스트용의 기판 전극(TEG : Test Element Group)에 가고정한 후, 200℃로 승온시킨 오븐 큐어에 의해 4시간 가열한 후 강온시켜 본고정하여, 샘플을 작성하여, 초음파 영상 장치에 의해 촬영한 초음파 화상을 관찰하였다. 화상을 관찰한 결과, 화상 중에 백색이 없다고 판단한 샘플을 합격이라고 평가하고, 백색이 관찰된 샘플을 불합격이라고 평가하였다. 하기 표 1, 2의 「보이드리스/SAT 화상」의 란에는, 평가 결과가 합격인 경우를 「OK」라고 기재하고, 불합격인 경우를 「NG」라고 기재하였다.Ultrasonic imaging (SAT) was used to assess the presence of voids in nondestructive conditions. Specifically, after the semiconductor chip was temporarily fixed to the test substrate electrode (TEG: Test Element Group) at a heating temperature of 260 ° C and the pressing pressures shown in Tables 1 and 2, the oven was heated to 200 ° C. After heating for a time, the temperature was lowered to fix the sample, a sample was prepared, and the ultrasonic image photographed by the ultrasonic imaging apparatus was observed. As a result of observing the image, the sample judged that there was no white in the image was evaluated as pass, and the sample in which white was observed was evaluated as fail. In the column of "voidless / SAT images" shown in Tables 1 and 2 below, a case in which the evaluation result was a pass was described as "OK", and a case in which a disqualified test was "NG".

［접속성(도통)］[Connection (conduction)]

테스트용의 기판 전극에는, 반도체 칩의 범프의 전기적 접속을 확인할 수 있는 데이지 체인의 배선 패턴이 TEG로서 형성되어 있으며, 반도체 칩을 TEG에 탑재하여, 범프의 접속 상태의 확인을 행하였다. 모든 도통 경로의 접속을 확인할 수 있었던 경우를 합격이라고 평가하고, 1개소라도 접속할 수 없는 경우를 불합격이라고 평가하였다. 표 1, 2의 「접속성(도통)」의 란에는, 평가 결과가 합격인 경우에 「OK」라고 기재하고, 불합격인 경우에 「NG」라고 기재하였다.The wiring pattern of the daisy chain which can confirm the electrical connection of the bump of a semiconductor chip was formed as TEG on the board | substrate electrode for a test, The semiconductor chip was mounted in TEG, and the bump connection state was confirmed. The case where the connection of all the conduction paths could be confirmed was evaluated as pass, and the case where it was not possible to connect even one place was evaluated as fail. In the column of "Connectivity (conduction)" of Tables 1 and 2, when the evaluation result is a pass, it described as "OK", and when it was a failure, it described as "NG".

［판정］[Judgment]

종합 판정을 이하의 기준으로 행하였다.The comprehensive determination was made based on the following criteria.

A : 상술한 필름 파단 강도, 보이드, 접속성의 평가 결과가 합격이며, 또한, 압압력이 40N 이하.A: The evaluation result of the film breaking strength, voids, and connectivity described above is a pass, and the pressure is 40 N or less.

B : 상술한 필름 파단 강도, 보이드, 접속성의 평가 결과가 합격이며, 또한, 압압력이 40N보다 크고 90N 이하.B: The evaluation result of the film breaking strength, voids, and connectivity described above is a pass, and the pressing force is larger than 40N and 90N or less.

C : 상술한 필름 파단 강도, 보이드, 접속성의 평가 결과 중 적어도 1개가 불합격이거나, 또는, 압압력이 90N보다 크다.C: At least one of the evaluation results of the film breaking strength, voids, and connectivity described above is rejected, or the pressure is greater than 90N.

＜실시예 1＞<Example 1>

［조성물의 조제］[Preparation of composition]

아크릴 폴리머(Mw=1000000)와, 아크릴 모노머(제품명 : 오그솔 EA0200, 오사카 가스 케미컬 주식회사제)와, 말레이미드 화합물(제품명 : BMI5100, 다이와 화성 공업 주식회사제)과, 비스페놀(제품명 : DABPA, 다이와 화성 공업 주식회사제)과, 필러(실리카 필러, 제품명 : MEK-AC-2140Z, 닛산 화학 공업 주식회사제)와, 메틸에틸케톤을, 표 1에 나타내는 질량부(또는 함유량 wt%)가 되도록 칭량하여, 이 조성물을 상온의 볼밀로 12시간 이상 24시간 이하의 시간 범위에서 혼합·분산하여, 균일하게 용해 혼합된 조성물을 얻었다.Acrylic polymer (Mw = 1000000), acrylic monomer (product name: Ogsol EA0200, manufactured by Osaka Gas Chemical Co., Ltd.), maleimide compound (product name: BMI5100, manufactured by Daiwa Kasei Kogyo Co., Ltd.), bisphenol (product name: DABPA, Daiwa Kasei) Industrial Co., Ltd.), filler (silica filler, product name: MEK-AC-2140Z, manufactured by Nissan Chemical Industry Co., Ltd.), and methyl ethyl ketone are weighed so as to be a mass part (or content wt%) shown in Table 1, and The composition was mixed and dispersed in a time range of 12 hours or more and 24 hours or less with a ball mill at room temperature to obtain a composition that was dissolved and mixed uniformly.

［언더필 필름의 제작］[Production of underfill film]

얻어진 조성물을, 소정의 시트 두께가 되도록 갭 조정된 콤마 코터(등록 상표)로 박리 기재에 도포하여, 연속적으로 70℃의 오븐에서 건조시켜 언더필 필름을 제작하였다. 건조 시간은, 약 3분 이상 5분 이하의 시간 범위로 하고, 제작한 언더필 필름의 용제 잔분이 2wt% 이하가 되도록 건조 시간을 조정하였다.The obtained composition was apply | coated to a peeling base material with the comma coater (trademark) gap-adjusted so that it might become predetermined | prescribed sheet thickness, and it continuously dried in 70 degreeC oven and produced the underfill film. Drying time was made into the time range of about 3 minutes or more and 5 minutes or less, and drying time was adjusted so that the solvent residue of the produced underfill film might be 2 wt% or less.

［실장 공정］[Mounting process]

제작한 언더필 필름을 웨이퍼에 접착하기 위해, 다이어프램식 라미네이터(주식회사 메이키 제작소)를 이용하여, 60초간 진공에서 가온(60℃) 접합을 행하여, 언더필 필름이 부착된 웨이퍼를 제작하였다.In order to adhere | attach the produced underfill film to a wafer, using a diaphragm type laminator (Meiki Corporation), the heating (60 degreeC) bonding was performed for 60 second in vacuum, and the wafer with an underfill film was produced.

언더필 필름이 부착된 웨이퍼를, 웨이퍼 다이싱 장치(주식회사 디스코제)를 사용하여, 각 칩 사이즈로 다이싱하여, 언더필 필름이 부착된 칩을 제작하였다.The wafer with an underfill film was diced into each chip size using the wafer dicing apparatus (made by Disco Co., Ltd.), and the chip | tip with an underfill film was produced.

언더필 필름이 부착된 칩에 대해, 플립칩 본더(파나소닉 주식회사제)로 회로 기판에 대해 얼라인먼트 조정을 실시한 후, 소정의 장소에 본딩, 실장하여, 땜납 접합시켰다.About the chip | tip with an underfill film, after carrying out alignment adjustment with respect to a circuit board with flip chip bonder (made by Panasonic Corporation), it bonded and mounted at the predetermined place and solder-bonded.

＜실시예 2~8, 비교예 1~9＞ <Examples 2-8, Comparative Examples 1-9>

표 1, 2에 나타낸 함유량으로 조성물을 조제한 것 이외는, 표 1, 2에 기재한 조건에 따라, 실시예 1과 동일한 제조 공정으로, 실시예 2~8, 비교예 1~9의 언더필 필름을 제작하였다. 또한, 하기 표 중, 아크릴 폴리머, 아크릴 모노머 및 말레이미드 화합물의 란의 상단에 기재한 수치(예를 들면 실시예 1의 아크릴 폴리머에서는 100)와, 필러 및 페놀 화합물의 란에 기재한 수치는, 각 성분의 배합량(질량부)을 나타낸다. 또, 하기 표 1, 2 중, 아크릴 폴리머, 아크릴 모노머 및 말레이미드 화합물의 란의 하단에 기재한 수치(예를 들면 실시예 1의 아크릴 폴리머에서는 30.3wt%)는, 언더필재 중의, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물을 합계한 질량부의 값에 대한 각 성분의 질량부의 값인 함유량(wt%)을 나타낸다.Except having prepared the composition by content shown to Table 1, 2, the underfill films of Examples 2-8 and Comparative Examples 1-9 were manufactured by the same manufacturing process as Example 1 according to the conditions described in Table 1, 2. Produced. In addition, in the following table, the numerical value (for example, 100 in the acrylic polymer of Example 1) and the numerical value described in the column of a filler and a phenol compound are described at the top of the column of an acrylic polymer, an acrylic monomer, and a maleimide compound, The compounding quantity (mass part) of each component is shown. In addition, the numerical value (for example, 30.3 wt% in the acrylic polymer of Example 1) described in the lower end of the column of an acryl polymer, an acryl monomer, and a maleimide compound in following Tables 1 and 2 is an acryl polymer in an underfill material, And content (wt%) which is the value of the mass part of each component with respect to the value of the mass part which totaled the acryl monomer and the maleimide compound.

[표 1]TABLE 1

Figure pct00001
Figure pct00001

[표 2]TABLE 2

Figure pct00002
Figure pct00002

비교예 1~9는, 100질량부의 주조성물 중에, 아크릴 폴리머가 10질량부 이상 60질량부 이하의 범위로 함유시키는 조건과, 100질량부의 주조성물 중에, 말레이미드 화합물이 20질량부 이상 70질량부 이하의 범위로 함유시키는 조건 중, 적어도 어느 하나의 조건을 만족하지 않는 언더필재를 이용하였으므로, 저압 실장이나 보이드리스 실장을 실현할 수 없었다.In Comparative Examples 1-9, in a cast product of 100 mass parts, 20 mass parts or more and 70 mass parts of a maleimide compound are contained in 100 mass parts cast material, and the conditions which an acrylic polymer contains in a range of 10 mass parts or more and 60 mass parts or less. Since the underfill material which does not satisfy at least any one of the conditions contained in the below-mentioned range was used, low-pressure mounting and voidless mounting could not be implement | achieved.

한편, 실시예 1~8은 100질량부의 주조성물 중에 아크릴 폴리머가 10질량부 이상 60질량부 이하의 범위로 함유되고, 또한, 100질량부의 주조성물 중에 말레이미드 화합물이 20질량부 이상 70질량부 이하의 범위로 함유된 언더필재를 이용하였으므로, 저압 실장 및 보이드리스 실장을 실현할 수 있었다.On the other hand, Examples 1-8 contain the acrylic polymer in the range of 10 mass parts or more and 60 mass parts or less in 100 mass parts cast product, and 20 mass parts or more and 70 mass parts of maleimide compounds in 100 mass parts cast product Since the underfill material contained in the following range was used, low-pressure mounting and voidless mounting were realizable.

6: 범프 7: 기판 전극
9: 반도체 장치 11: 웨이퍼
12: 언더필 필름 13: 지그
15: 반도체 칩 16: 회로 기판6: bump 7: substrate electrode
9: semiconductor device 11: wafer
12: underfill film 13: jig
15: semiconductor chip 16: circuit board

Claims (17)

반도체 칩과 회로 기판의 사이에 배치되고, 경화되면 상기 반도체 칩을 상기 회로 기판에 고정하는 미경화 언더필재로서,
아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물로 이루어지는 주조성물을 포함하고,
상기 아크릴 폴리머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유되며,
상기 말레이미드 화합물은, 상기 주조성물의 100질량부 중에 20질량부 이상 70질량부 이하의 범위로 함유된, 언더필재.As an uncured underfill material which is disposed between a semiconductor chip and a circuit board and, when cured, fixes the semiconductor chip to the circuit board.
A cast product composed of an acrylic polymer, an acrylic monomer, and a maleimide compound,
The acrylic polymer is contained in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product,
The said maleimide compound contained in the range of 20 mass parts or more and 70 mass parts or less in 100 mass parts of the said casting products. 청구항 1에 있어서,
상기 아크릴 모노머는, 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유된, 언더필재.The method according to claim 1,
The underfill material contained the said acrylic monomer in the range of 10 mass parts or more and 60 mass parts or less in 100 mass parts of the said casting products. 청구항 1 또는 청구항 2에 있어서,
상기 주조성물 중의 상기 아크릴 폴리머는, 중량 평균 분자량(Mw)이, 100000 이상 1200000 이하의 범위인, 언더필재.The method according to claim 1 or 2,
The said acrylic polymer in the said cast product is underfill material whose weight average molecular weights (Mw) are the range of 100000 or more and 1200000 or less. 청구항 1에 있어서,
상기 아크릴 모노머는 플루오렌계 아크릴레이트를 포함하는, 언더필재.The method according to claim 1,
The acrylic monomer includes a fluorene-based acrylate, the underfill material. 청구항 1에 있어서,
상기 말레이미드 화합물은, 1분자 중에 말레이미드기를 2개 이상 포함하는, 언더필재.The method according to claim 1,
The said maleimide compound is an underfill material containing two or more maleimide groups in 1 molecule. 청구항 1에 있어서,
상기 말레이미드 화합물은 비스말레이미드인, 언더필재.The method according to claim 1,
The said maleimide compound is bismaleimide, the underfill material. 청구항 1에 있어서,
페놀 화합물을 더 포함하는, 언더필재.The method according to claim 1,
The underfill material which further contains a phenolic compound. 반도체 칩과 회로 기판의 사이에 배치되고, 경화되면 상기 반도체 칩을 상기 회로 기판에 고정하는 미경화 언더필 필름으로서,
아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물로 이루어지는 주조성물을 함유하고,
상기 아크릴 폴리머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위가 되며,
상기 말레이미드 화합물은 상기 주조성물의 100질량부 중에 20질량부 이상 70질량부 이하의 범위가 된, 언더필 필름.An uncured underfill film disposed between a semiconductor chip and a circuit board and, when cured, fixes the semiconductor chip to the circuit board.
Containing a cast product composed of an acrylic polymer, an acrylic monomer, and a maleimide compound,
The acrylic polymer is in the range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product,
The said maleimide compound became the range of 20 mass parts or more and 70 mass parts or less in 100 mass parts of the said cast products. 청구항 8에 있어서,
상기 아크릴 모노머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유된, 언더필 필름.The method according to claim 8,
The said acrylic monomer contained in the range of 10 mass parts or more and 60 mass parts or less in 100 mass parts of the said cast products. 청구항 8에 있어서,
상기 주조성물 중의 상기 아크릴 폴리머는, 중량 평균 분자량(Mw)이 100000 이상 1200000 이하의 범위인, 언더필 필름.The method according to claim 8,
The said acrylic polymer in the said cast product is an underfill film whose weight average molecular weights (Mw) are the range of 100000 or more and 1200000 or less. 청구항 8에 있어서,
상기 아크릴 모노머는 플루오렌계 아크릴레이트를 포함하는, 언더필 필름.The method according to claim 8,
The acrylic monomers, fluorene-based acrylate, the underfill film. 청구항 8에 있어서,
상기 말레이미드 화합물은, 1분자 중에 말레이미드기를 2개 이상 포함하는, 언더필 필름.The method according to claim 8,
The maleimide compound includes two or more maleimide groups in one molecule. 청구항 8에 있어서,
상기 말레이미드 화합물은 비스말레이미드인, 언더필 필름.The method according to claim 8,
The maleimide compound is bismaleimide, the underfill film. 청구항 8에 있어서,
페놀 화합물을 더 포함하는, 언더필 필름.The method according to claim 8,
An underfill film, further comprising a phenolic compound. 청구항 8에 있어서,
인장 파단 강도의 값이 0.01MPa 이상 5.0MPa 이하의 범위에 포함되는, 언더필 필름.The method according to claim 8,
The underfill film whose value of tensile strength at break is contained in the range of 0.01 MPa or more and 5.0 MPa or less. 반도체 칩의 범프가 설치된 표면과 회로 기판의 표면의 사이에 언더필 필름을 배치하고, 상기 언더필 필름에 의해 상기 반도체 칩과 상기 회로 기판을 접착시켜 반도체 장치를 제조하는 반도체 장치의 제조 방법으로서,
상기 언더필 필름은, 아크릴 폴리머와, 아크릴 모노머와, 말레이미드 화합물로 이루어지는 주조성물을 함유하고,
상기 아크릴 폴리머는 상기 주조성물의 100질량부 중에 10질량부 이상 60질량부 이하의 범위로 함유되며,
상기 말레이미드 화합물은, 상기 주조성물의 100질량부 중에 20질량부 이상 70질량부 이하의 범위로 함유된, 반도체 장치의 제조 방법.A method of manufacturing a semiconductor device, wherein an underfill film is disposed between a surface on which a bump of a semiconductor chip is provided and a surface of a circuit board, and the semiconductor chip is bonded to the circuit board by the underfill film to produce a semiconductor device.
The underfill film contains a cast product composed of an acrylic polymer, an acrylic monomer, and a maleimide compound,
The acrylic polymer is contained in a range of 10 parts by mass to 60 parts by mass in 100 parts by mass of the cast product,
The said maleimide compound was contained in 100 mass parts of said casting products in the range of 20 mass parts or more and 70 mass parts or less, The manufacturing method of the semiconductor device. 청구항 16에 있어서,
상기 반도체 칩과 상기 회로 기판의 사이에 상기 언더필 필름이 배치된 상태로 상기 반도체 칩을 가열하면서 상기 회로 기판에 압압(押壓)하여, 상기 반도체 칩과 상기 회로 기판의 사이에 위치하는 상기 언더필 필름의 일부를 상기 반도체 칩과 상기 회로 기판의 사이로부터 밀어내어, 상기 반도체 칩의 범프를 상기 회로 기판의 기판 전극에 접촉시키는 가고정 공정과,
상기 가고정 공정에서 승온된 온도보다 높은 온도로 상기 반도체 칩과 상기 회로 기판과 상기 언더필 필름을 승온시켜, 상기 범프를 용융시킨 후, 상기 반도체 칩과 상기 언더필 필름과 상기 회로 기판을 강온시켜, 용융된 상기 범프를 상기 기판 전극과 접촉한 상태로 고화시키는 탑재 공정을 갖는, 반도체 장치의 제조 방법.The method according to claim 16,
The underfill film positioned between the semiconductor chip and the circuit board by pressing the circuit chip while heating the semiconductor chip with the underfill film disposed between the semiconductor chip and the circuit board. A temporarily fixed step of pushing a part of the semiconductor chip from the circuit board to contact the bump of the semiconductor chip with a substrate electrode of the circuit board;
After heating up the semiconductor chip, the circuit board, and the underfill film to a temperature higher than the temperature elevated in the temporary fixing step, after melting the bumps, the semiconductor chip, the underfill film, and the circuit board are lowered and melted. The manufacturing method of the semiconductor device which has a mounting process which solidifies the said bump in the state which contacted the said board | substrate electrode.
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