KR20190131292A - Emit concentrate high power light emitting diode package - Google Patents

Abstract

The present invention provides a light emitting concentration high power light emitting diode package. According to an embodiment of the present invention, the light emitting concentration high power light emitting diode package comprises: an electrode receiving power from the outside; a substrate provided at an upper part of the electrode and having an electric circuit receiving the power from the electrode and transferring the power; a light emitting unit provided at an upper part of the substrate and emitting first light by receiving the power through the electric circuit; an encapsulment formed to be in contact with the light emitting unit to protect the light emitting unit by including a fluorescent body converting the first light into second light; and a light guide unit formed to be in contact with each of an upper part of the substrate in which the light emitting unit is not provided and the encapsulment and guiding a progress direction of the first light. The fluorescent body has a portion of 75% or greater of an encapsulment content.

Description

Emit concentrate high power light emitting diode package

The present invention relates to a light emitting intensive type high power light emitting diode package, and in particular, even when a high power is supplied, stable heat emission is achieved and uniform light can be emitted, and light emission can concentrate light emission by limiting the light emitting area. A concentrated high power light emitting diode package.

In the general light emitting diode, an electrode receiving power from the outside, a substrate formed on the electrode to transfer power to the light emitting unit, a light emitting unit formed on the substrate to receive power from the substrate to emit the first light, If necessary, it is formed of a phosphor formed on the light emitting part to convert the first light emitted from the light emitting part into second light having a different wavelength, and an encapsulant for protecting the light emitting part and the phosphor and increasing durability.

In this case, the phosphor may be present between the light emitting unit and the encapsulant, but may be mixed with the encapsulant and included in the encapsulant layer according to a position used and a user's request, thereby realizing miniaturization of the light emitting diode.

Recently, light emitting diodes have been used in fields requiring high power efficiency, such as automobiles, by taking advantage of power efficiency. However, the light emitting diode has a disadvantage in that the lifetime and performance of the light emitting diode are deteriorated due to heat unless temperature control through sufficient heat radiation is preceded.

This disadvantage is that when the light emitting diode is supplied with high power to emit bright light, the light output of the light emitting diode decreases due to heat, and this decrease in light output causes a problem that it is difficult to output a uniform color. . In addition, such a problem may cause another problem that it is difficult to apply a light emitting diode to an automotive exterior device where high output and uniform color maintenance are important.

KR 10-2016-0133484 A

In order to solve the problems of the prior art as described above, an embodiment of the present invention can maintain a uniform light output and color uniformity even when the temperature rises at a high output can be used as a device for automotive exterior, as well as using a light emitting area An object of the present invention is to provide a light-emitting focused high power LED package.

According to an aspect of the present invention for solving the above problems, there is provided a light emitting focused high power light emitting diode package. The light emitting intensive type high power light emitting diode package may include an electrode receiving power from an outside; A substrate provided on the electrode and having an electric circuit configured to receive and transfer the power from the electrode; A light emitting unit provided on the substrate and emitting the first light by receiving the power through the electric circuit; An encapsulant formed in contact with the light emitting part to include the phosphor converting the first light into the second light to protect the light emitting part; And a light guide part which is formed to be in contact with an upper portion of the substrate and the encapsulant not provided with the light emitting part, and guides a direction in which the first light travels.

The light guide part may be formed to be in contact with the other surface of the light emitting part except for the upper surface of the encapsulant and the surface of the encapsulant contacting the light emitting part.

The light guide part may have a surface in contact with the encapsulant as a reflective plate.

The light guide part may further perform a heat sink function of receiving heat from at least one of the substrate, the light emitting part, and the encapsulant to radiate heat to the outside.

The phosphor may have a specific gravity of 85% or less of the encapsulant content.

The first light may be blue light emitted from a blue light emitting diode, and the second light may be amber light.

The light emitting part may be bonded to the substrate by an eutectic process for thermal stability.

The light emitting part may be formed to be spaced apart from each side of the substrate by at least 300 μm.

The encapsulant may transmit the first light at 6% or less of the second light.

The encapsulant may be uniformly dispersed by performing at least two stirring operations.

The encapsulant may be formed to a thickness of 300um to 400um on the light emitting part.

The substrate may be formed of aluminum nitride (AlN) or aluminum oxide (Al ₂ O ₃ ) -based ceramic.

The light emitting intensive type high output light emitting diode package according to the exemplary embodiment of the present invention has an effect of maintaining light emitting characteristics even when a high output is received.

In addition, the light emitting intensive type high power light emitting diode package according to an embodiment of the present invention has an effect of providing uniform light emitting characteristics even when the temperature is increased.

In addition, the light emission type high output light emitting diode package according to the embodiment of the present invention has an effect of stably providing an amber color.

In addition, the light emitting intensive type high output light emitting diode package according to the exemplary embodiment of the present invention may not only concentrate the light emitting area by limiting the light emitting area, but also may adjust the light emitting angle.

1 is a cross-sectional view of a light emitting intensive type high power light emitting diode according to an exemplary embodiment of the present invention.
2 is a view briefly showing a state of bonding a light emitting unit and a substrate according to an embodiment of the present invention.
3 is a graph showing a thermal resistance-heat capacity simulation result according to an embodiment of the present invention.
4 is a view comparing light emission performance according to an interval between a light emitting unit and a substrate according to an exemplary embodiment of the present invention.
5 is a graph illustrating color coordinate performance test results according to phosphor content and a degree of transmission of first light according to an embodiment of the present invention.
6 is a view comparing the phosphor dispersion according to the number of times of stirring of the phosphor according to an embodiment of the present invention.
FIG. 7 is a diagram illustrating detailed measurement results of a light emitting intensive type high output light emitting diode according to an exemplary embodiment of the present invention and a general high output light emitting diode in which light is not concentrated.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description.

However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

In describing the drawings, similar reference numerals are used for similar elements.

Terms such as first, second, A, and B may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. The term and / or includes a combination of a plurality of related items or any item of a plurality of related items.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be.

On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art.

Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting intensive type high power light emitting diode according to an embodiment of the present invention, and FIG. 2 is a view briefly showing a process of bonding a light emitting unit and a substrate according to an embodiment of the present invention. 3 is a graph showing a thermal resistance-thermal capacity simulation result according to an embodiment of the present invention, Figure 4 is a view comparing the light emission performance according to the interval between the light emitting unit and the substrate according to an embodiment of the present invention. 5 is a graph showing the results of color coordinate performance experiments according to the phosphor content and the degree of transmission of the first light according to an embodiment of the present invention, Figure 6 is a phosphor dispersion according to the number of times of stirring of the phosphor according to an embodiment of the present invention, 7 is a view illustrating a comparison of shapes, and FIG. 7 illustrates detailed measurement results of a light emission type high power light emitting diode according to an exemplary embodiment of the present invention and a general high power light emitting diode in which light emission is not concentrated. It is Nando.

Hereinafter, a high power light emitting diode package according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 7, but the present invention is not limited thereto.

Referring to FIG. 1, the high power light emitting diode package 100 according to an embodiment of the present invention includes an electrode 110, a substrate 120, a light emitting unit 130, an encapsulant 140, and a light guide unit 150. It is formed, including.

The electrode 110 receives power from the outside and supplies it to the substrate 120 to be described later. To this end, the electrode 110 may be formed such that one side thereof contacts the substrate 120. In addition, the electrode 110 may receive DC power, and at this time, the electrode 110 is formed in two so that different polarities may be connected to each other in order to prevent short circuits that may occur when both poles of the DC power contact each other. May be

The substrate 120 receives power from the electrode 110 and supplies power to the light emitting unit 130 to be described later. In this case, the substrate 120 may further include an internal or external electrical circuit for supplying power from the electrode 110 to the light emitting unit 130, and a surface corresponding to the surface in contact with the electrode 110 may be a light emitting unit. It is formed to contact 130. That is, the substrate 120 may be formed such that the electrode 110 is in contact with the lower portion and the light emitter 130 is in contact with the upper portion as shown in FIG. 1.

In addition, the substrate 120 is an aluminum nitride (AlN) or aluminum oxide (Al ₂ O ₃ ) -based ceramic in order to heat radiation stably to receive heat generated from the light emitting unit 130 to be described later by increasing the thermal conductivity It may be formed of a substrate.

The light emitter 130 is formed to be in contact with the substrate 120 to receive power through an electric circuit formed on the substrate 120 to emit the first light. In this case, the light emitter 130 may be formed on the substrate 120 and may be formed of a blue light emitting diode emitting blue light which is the first light in a direction opposite to the substrate 120.

Meanwhile, referring to FIGS. 2 and 3, the substrate 120 and the light emitter 130 may be adhered to each other using an eutectic process as shown in FIG. 2B. FIG. 2A is an X-ray diagram illustrating the bonding between the substrate 120 and the light emitting unit 130 using a solder process, and FIG. 2B illustrates a substrate (using a eutectic process). 120 and the light emitting unit 130 are bonded to each other.

In addition, in the thermal resistance-heat capacity graph of FIG. 3, Test 1 included in the range of B is a result of supplying various sizes of current to the LED package to which the solder process is applied, and C is a LED to which the eutectic process is applied. This is the result of supplying various amounts of current to the package.

As a result of comparing the difference between the two processes, the solder process, when supplying a current of various sizes, it was confirmed that a large difference in the heat capacity value at a high heat resistance value (Fig. 3 B range). On the other hand, in the eutectic process, most of the thermal resistance values for the same heat capacity value are higher than those of the solder process in the range that the heat capacity value does not exceed 0.1, but the constant value is maintained even when various currents are supplied. It was confirmed that the heat resistance value of magnitude was shown.

This is because, in the case of the solder process, an empty space represented by A of FIG. 2A is generated on the bonding surface between the substrate 120 and the light emitting unit 130. In this case, the solder process is more stable as the output increases. Not only may heat dissipation occur, but non-heated heat may cause defects such as carbonization of light emitting devices.

Therefore, the high power LED package 100 according to the embodiment of the present invention applies a eutectic process for bonding between the substrate 120 and the light emitting unit 130, thereby applying a conventional solder process. In contrast, stable heat dissipation at high power may be possible.

In addition, the light emitting unit 130 may be formed on the upper portion of the substrate 120 spaced apart from each side of the substrate 120 by at least 300um. FIG. 4 illustrates an experimental result of a change in performance according to a separation distance between the light emitting unit 130 and the substrate 120 according to an exemplary embodiment of the present invention.

FIG. 4A illustrates a distance between one side of the substrate 120 and one side of the light emitting unit 130 as D, and is a result of photographing light emission performance at 300 μm. FIG. 4B illustrates one side of the substrate 120. And the distance between one side of the light emitting unit 130 is represented by E, and the result of the experiment photographing the light emission performance at 250um.

4A and 4B, in the high output light emitting diode package according to the exemplary embodiment of the present invention, when the substrate spacing is less than 300 μm, the amber color may be implemented in the central portion of the light emitting unit 130 as shown in FIG. 4B. As it moves to the side, the blue light, which is the first light, may be smaller than the amber phosphor described later, and the reflecting area that may reflect the red light may appear.

On the other hand, in the case of Figure 4a, since the distance to the substrate has a sufficient separation distance of 300um or more, the high power light emitting diode package 100 according to an embodiment of the present invention is a stable amber color in all areas of the light emitting unit 130 We have confirmed that we implement.

Therefore, in the high output light emitting diode package 100 according to the embodiment of the present invention, the light emitting unit 130 is bonded by setting the separation distance between the substrate 120 and the light emitting unit 130 to be at least 300 μm, thereby causing the conventional light emission. In contrast to the diode package, there is an effect that can implement a stable amber color in the entire region of the light emitting unit 130.

The encapsulant 140 converts the first light emitted from the light emitter 130 into second light and protects the light emitter 130. To this end, the encapsulant 140 may be formed to include a certain amount of phosphor, and in particular, may be formed to contact the upper portion of the light emitting unit 130 to protect the light emitting unit 130.

The encapsulant 140 may be formed to include an amber phosphor as a phosphor for converting the first light into the second light, and may be formed to have a thickness of 0.38 to 0.48 mm on the light emitter 130. In this case, the amber phosphor may be included in the encapsulant 140 to have a specific gravity of 75% to 85% of the content of the encapsulant 140.

The simulation results related to this are shown in FIG. 5A. Referring to FIG. 5A, when the phosphor content is 95%, the encapsulant 140 according to an embodiment of the present invention is located at the lower right side of the color coordinates and is out of the color coordinates, when the phosphor content is 80%. As a result, it can be seen that the color reproduction rate decreases. In addition, even in the case where the phosphor content is 80%, in FIG. 5A, four more experiments were performed by varying the thickness of the encapsulant 140. As a result, the phosphor content is 80% and the encapsulant 140 is 0.40 thick. When it is from 0.45mm it was confirmed that the best inclusion in the color coordinate system.

In this case, when the phosphor content is 80%, the encapsulant 140 is included in the color coordinate system from the case where the thickness of the encapsulant 140 is 0.38 mm, and the encapsulant 140 immediately before leaving the color coordinate system has a thickness of 0.48 mm.

However, the present invention is not limited thereto, and when the phosphor content is to be controlled, the thickness of the encapsulant 140 may be adjusted through additional experiments so that the second light may be included in the color coordinate system at other phosphor contents.

In addition, the encapsulant 140 may be formed to transmit the first light to 6% or less of the second light. Referring to FIG. 5B, when the light finally emitted through the encapsulant 140 according to the exemplary embodiment of the present invention includes 6% or more of blue light in the amber color light, which is the second light, the color reproduction rate decreases and the color coordinates are reduced. It can be seen that is formed in the F region deviating from, and when the blue light is included in the amber color light 6% or less, it can be seen that formed in the G region inside the color coordinates.

On the other hand, the encapsulant 140 may be formed by uniformly dispersing the phosphor in order to increase the color reproducibility. To this end, the encapsulant 140 may perform at least two stirring operations, and the results of performing the stirring operations once, twice, and three times are shown in FIG. 6, and the stirring conditions for the evaluation of stirring are particularly It was applied as shown in the table shown in Figure 6a, it was discharged using a pump in the form of a screw and then stirred.

Analyzing the agitation result according to the number of phosphor agitation operation according to an embodiment of the present invention, Figure 6b is a result of performing agitation once, in this case, the stirring is not smoothly made by the phosphor particle size, etc. in the screw pump Phenomenon of the phosphor and the metal is generated, it can be seen that the phenomenon that the phosphor and the foreign material is applied together. Therefore, the result of the stirring discharge may cause a failure of the light emitting diode device in which uniform color reproduction is impossible.

In addition, Figure 6d is a result of performing agitation three times, in this case, the temporary hardening of the encapsulant occurs by the heat generated during the stirring operation, the phenomenon that the phosphor sinks, it is difficult to maintain the optical characteristics of the light emitting diode element constant You can check it.

On the other hand, Fig. 6c shows the result of performing the stirring twice. Referring to FIG. 6C, the result of performing the two stirring operations is that the phosphor is more stably dispersed in the encapsulant 140 than when stirring three times, and the phosphor and the metal formed when the stirring is performed once in the screw pump It can be seen that the splitting is also improved.

Finally, the light guide part 150 is formed to contact the upper portion of the substrate 120 except for the light emitting part 130. The light guide part 150 may be formed to surround the encapsulant 140 formed on the upper surface of the light emitting part 130. In FIG. 1, for convenience of description, the light guide part 150 is illustrated to be formed so that the light goes straight toward the upper direction of the light emitting part 130. However, the present invention is not limited thereto, and the light is output in a direction desired by the user. The light guide part 150 may be formed.

On the other hand, the light guide unit 150 may be formed using a material that does not leak light in order not to reduce the light efficiency, in particular, a high reflectance that can reflect without absorbing light in the portion in contact with the encapsulant 140 By forming or coating with a material having a, the output of light output from the light emitting unit 130 may pass through the encapsulant 140 without reducing. By using the reflection on the contact surface, the light guide unit 150 has an effect of guiding the light output from the light emitting unit 130 in a desired direction.

In summary, the light guide part 150 is formed to surround the encapsulant 140 to limit the optical path so that the first light emitted from the light emitter 130 moves only in the direction in which the encapsulant 140 is formed. In this case, the light emitting diode package 100 of the present invention may be formed to emit light in a desired direction according to a user's setting or need during manufacturing.

In addition, the light guide unit 150 is formed of a material having a high thermal conductivity, and thus also serves as a heat sink for easily dissipating heat generated in the substrate 120, the light emitting unit 130, and the encapsulant 140 to the outside. There is an effect that can be performed simultaneously.

On the other hand, Figure 7 is a view showing a detailed measurement result of the light emitting intensive type high output light emitting diode according to an embodiment of the present invention and the general high power light emitting diode that is not concentrated.

In the light emitting intensive type high output light emitting diode (hereinafter, referred to as “light emitting type”) according to an embodiment of the present invention, it can be seen that optical performance of 10% to 14% is increased compared to a general high output light emitting diode (hereinafter, referred to as a general type).

In the case of luminescent concentrating, the minimum luminous intensity was 49.19cd, the maximum luminous intensity was 54.72cd, and the average luminous intensity was measured as 51.70cd.In the general type, the minimum luminous intensity was 43.01cd, the maximum luminous intensity was 49.78cd, and the average luminous intensity was 46.14cd. Was measured. At this time, the light emission type based on the general light intensity was confirmed to improve the performance of 14% at the minimum brightness, 10% at the maximum brightness, 12% at the average brightness.

In addition, in the color coordinates represented by the emission type, a deviation of 0.0025 occurs in the case of CIE x and a deviation of 0.0012 in the case of CIE y, but a deviation of 0.0104 occurs in the case of CIE x in the color coordinates represented by the general type. In this case, a deviation of 0.0033 occurred, and it was confirmed that the luminescent concentrated type represented a more uniform color than the general type.

Furthermore, the wavelength range of the luminescence concentration type ranges from 590.44 nm to 590.56 nm, showing a difference between the maximum wavelength and the minimum wavelength of 0.12 nm, whereas in the general type, the difference between the maximum wavelength and the minimum wavelength varies from 0.18 nm to 589.88 nm and 590.06 nm. It was confirmed that the wavelength range of the luminescence concentration type had a smaller error.

Although one embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiments set forth herein, and those skilled in the art who understand the spirit of the present invention may add components within the same scope. Other embodiments may be easily proposed by changing, deleting, adding, and the like, but this will also fall within the spirit of the present invention.

100: high power light emitting diode package
110 electrode 120 substrate
130: light emitting unit 140: sealing material
150: light guide portion

Claims (12)

An electrode receiving power from the outside;
A substrate provided on the electrode and having an electric circuit configured to receive and transfer the power from the electrode;
A light emitting unit provided on the substrate and emitting the first light by receiving the power through the electric circuit;
An encapsulant formed in contact with the light emitting part to include the phosphor converting the first light into the second light to protect the light emitting part; And
A light guide part formed to be in contact with an upper portion of the substrate and the encapsulant not provided with the light emitting part, and to guide a traveling direction of the first light;
The phosphor is a light emitting intensive high power light emitting diode package having a specific gravity of at least 75% of the encapsulant content. The method of claim 1,
The light guide part is a light emitting intensive type high power light emitting diode package formed to be in contact with the other side of the light emitting portion except the surface of the encapsulant and the encapsulant in contact with the light emitting portion. The method of claim 2,
The light guide part is a light emitting intensive high power light emitting diode package having a surface in contact with the encapsulant formed of a reflecting plate. The method of claim 3, wherein
The light guide part, the light emitting centralized high power light emitting diode package further performs a heat sink function to receive heat from at least one of the substrate, the light emitting portion and the encapsulant to radiate heat to the outside. The method of claim 4, wherein
The phosphor has a specific gravity of 85% or less of the encapsulant content of the light emitting intensive type high power light emitting diode package. The method of claim 5,
The first light is blue light emitted from a blue light emitting diode, and the second light is amber light. The method of claim 6,
The light emitting unit is a light emitting intensive high power light emitting diode package is bonded to the substrate by a eutectic (Eutectic) process for thermal stability. The method of claim 7, wherein
The light emitting unit is a light emitting intensive high power light emitting diode package formed to be spaced apart from each side of the substrate by at least 300um. The method of claim 8,
The encapsulant transmits the first light to 6% or less of the second light. The method of claim 9,
The encapsulant is a light emitting intensive type high power light emitting diode package in which the phosphor is uniformly dispersed by performing at least two stirring operations. The method of claim 10,
The encapsulation material is a light emitting intensive type high power light emitting diode package formed on the light emitting part to a thickness of 300 to 400um. The method of claim 11,
The substrate is a light emitting intensive high power light emitting diode package formed of aluminum nitride (AlN) or aluminum oxide (Al ₂ O ₃ ) -based ceramic.

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