KR20190129475A - Transparent electrode, Method of preparing the same and Electronic Device comprising the same - Google Patents

Abstract

The present invention relates to a transparent electrode with increased light transmittance by a surface treatment technique, a manufacturing method thereof, and an electronic element including the same. According to an embodiment of the present invention, the transparent electrode includes a structure in which a substrate, an amine group-containing compound layer on the substrate; a metal layer on the amine group-containing compound layer, a metal oxide layer on the metal layer, and an anti-reflection layer on the metal oxide layer are stacked in order.

Description

Transparent electrode, method of manufacturing the same and electronic device comprising the same {Transparent electrode, Method of preparing the same and Electronic Device comprising the same}

The present invention relates to a transparent electrode, a manufacturing method thereof, and an electronic device including the same.

Recently, as the desire for the ubiquitous era grows, research into the next generation of electronic devices is being actively conducted worldwide. As research on organic displays and organic solar cells is accelerated, development of transparent electrode materials is important for commercialization of such devices. Transparent electrodes for next generation electronic devices are mechanically flexible and require excellent optical properties (light transmittance> 85%, @ 550 nm) and excellent electrical properties (surface resistance <15 Ω / □).

As disclosed in Korean Patent Laid-Open No. 2013-0027991 and the like, the most commonly used transparent electrode is an indium tin oxide (ITO) thin film doped with indium oxide and tin oxide. However, the ITO has the following problems.

(1) In the case of forming an ITO transparent electrode on a glass substrate, it is possible to obtain a high temperature heat treatment of 300 ° C. or more to obtain a crystalline ITO thin film having a low sheet resistance, whereas on an organic substrate such as polyethylene terephthalate (PET) In the case of forming the ITO transparent electrode on the substrate, since the heat treatment is performed at a temperature of 200 ° C. or lower to prevent deformation or damage of the organic material, there is a problem in that an amorphous ITO thin film having high sheet resistance is formed.

(2) ITO transparent electrodes, unlike metal materials and polymer materials, are easily formed with cracks due to bending of the substrate, which makes it difficult to apply the device.

(3) With the explosive increase in demand for flat panel displays, mobile devices, and touch panels using ITO transparent electrodes, the price of indium, the main raw material for ITO transparent electrodes, has been continuously rising, and cost competitiveness has been lowered due to limited reserves. There is a problem.

(4) The process environment that requires high temperature and high vacuum when forming a thin film acts as a reason for the price increase of ITO transparent electrode.

In order to replace the ITO transparent electrode and to achieve a flexible transparent electrode, in addition to the "high transmittance" and "low sheet resistance", it must have "flexibility" and must be "formable at low temperature" so that it can be manufactured on a flexible substrate. do. In order to develop a transparent electrode that satisfies these conditions, research has been actively conducted in various fields such as a conductive polymer, an oxide-metal-oxide (OMO) structure, graphene, and ultra-thin metals. Transparent electrodes satisfying both optical and electrical characteristics have not been developed.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a transparent electrode having improved light transmittance by a surface treatment technology, a method of manufacturing the same, and an electronic device including the transparent electrode.

One preferred embodiment of the present invention for solving the above problems is a substrate; An amine group-containing compound layer on the substrate; A metal layer on the amine group-containing compound layer; A metal oxide layer on the metal layer; And a structure stacked on the metal oxide layer in the order of the antireflection layer, wherein the metal oxide layer is UV-ozone treated.

The metal oxide layer is characterized in that it has a thickness of 30 ~ 40nm.

The metal oxide layer is characterized in that it comprises zinc oxide.

The anti-reflection layer is characterized in that it comprises a poly (3,4-ethylenedioxythiophene) poly (styrene sulfonate) [Poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), (PEDOT: PSS).

The substrate may be an inorganic substrate selected from glass, quartz, Al ₂ O ₃ , SiC, Si, GaAs, InP; Or tons of foil, polyimide (PI), polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), Polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polycarbonate, PC, cellulose triacetate (CTA), cellulose acetate propio Nate (cellulose acetate propionate, CAP) is characterized in that the organic substrate is selected.

The metal of the metal layer is Ag, Cu, Au, Al, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Ti, V, Cr, Mn , Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Tl, Pb, Bi , Ga, Ge, Sb, Ac, Th, and combinations thereof.

Another preferred embodiment of the present invention comprises the step of forming an amine group-containing compound layer on the substrate (S210); Forming a metal layer on the amine group-containing compound layer (S220); Forming a metal oxide layer on the metal layer (S230); And performing a UV-ozone treatment on the metal oxide layer (S240). Forming an anti-reflection layer (S250); to provide a method of manufacturing a transparent electrode comprising a.

The step of forming an amine group-containing compound layer in step S210, the step of forming a metal oxide layer in step S230 and the step of forming an antireflection layer in step S250 are spin coating, roll coating, spray coating, respectively Method, flow coating method, inkjet printing method, nozzle printing method, dip coating method, electrophoretic deposition method, tape casting method, screen printing method, pad printing method, doctor blade coating method, gravure printing method, It is characterized by being carried out by a gravure offset printing method, Langmuir-Blogett method, sputter deposition method, electron beam deposition method, thermal evaporation method, or chemical vapor deposition method.

The step of forming the metal layer in step S220 is characterized in that it is carried out by the sputter deposition method, electron beam deposition method, thermal evaporation method, chemical vapor deposition method, or a solution process.

In the step S240, the UV-ozone treatment is characterized by irradiating short wavelength ultraviolet rays of 185 to 254 nm for 10 to 30 minutes.

Another preferred embodiment of the present invention is to provide an electronic device comprising the above-described transparent electrode.

The transparent electrode and the electronic device including the same according to the present invention have an improved light transmittance by the surface treatment technology and have a low sheet resistance.

1 is a view showing the structure of a transparent electrode according to an embodiment of the present invention.
2 is a view showing a method of manufacturing a transparent electrode according to an embodiment of the present invention.

1, a substrate according to an embodiment of the present invention; An amine group-containing compound layer on the substrate; A metal layer on the amine group-containing compound layer; A metal oxide layer on the metal layer; And a structure stacked on the metal oxide layer in the order of the antireflection layer, wherein the metal oxide layer is UV-ozone treated.

Hereinafter, a transparent electrode having excellent light transmittance of the present invention and an electronic device including the same will be described in detail so that a person skilled in the art can easily carry out the present invention.

The present invention relates to a transparent electrode having excellent light transmittance and an electronic device including the same, and more particularly, to an ultra-thin metal electrode having a multilayer structure. The ultra-thin metal electrode having excellent light transmittance of the present invention may have a structure laminated in the order of a substrate / amine group-containing compound layer / metal layer / metal oxide layer / antireflective layer, and the metal oxide layer is preferably UV-ozone treated. Do.

The transparent electrode according to the present invention includes a structure in which a metal oxide layer is laminated between a metal layer and an antireflection layer, which realizes the maximum transmittance and electrical conductivity desired by the present invention in the transparent electrode including the metal layer and the antireflection layer. In order to do this, it is preferable to laminate a metal oxide layer between the metal layer and the antireflection layer.

Specifically, when the anti-reflective layer is laminated on the metal layer after UV-ozone treatment to improve the coating property of the anti-reflective layer, the transmittance is increased but the metal layer is oxidized during the UV-ozone treatment to increase the resistance value. Since the lamination of the metal oxide layer, the UV-ozone treatment, and the anti-reflection layer, the coating property of the anti-reflection layer is improved and the sheet resistance of the metal layer is prevented from increasing. It can be realized.

It is preferable that the metal oxide layer has a thickness of 30 to 40 nm. If the thickness of the metal oxide layer is less than 30 nm, the specific resistance value is increased to increase the sheet resistance, and if the thickness exceeds 40 nm, the specific resistance value is lowered while the transmittance is lowered.

The metal oxide constituting the metal oxide layer includes all kinds of metal oxides having amphiphilic, for example, titanium oxide (Titanium sub-oxide, TiO _X and Titanium oxide, TiO ₂ ), zinc oxide (Zinc oxide) , ZnO), tungsten oxide (W ₂ O ₃ , WO ₂ , WO ₃ ), molybdenum oxide (Molybdenum oxide, MoO ₂ , MoO ₃ and Molybdenum sub-oxide, MoO _X ) and combinations thereof Or more, and preferably zinc oxide (ZnO) in that it is excellent in permeability and electrical conductivity in the infrared and visible light range, excellent in plasma, processable at low temperature, and low in raw material price. It is good to include.

An inorganic substrate or an organic substrate may be used as the substrate.

The inorganic substrate may be made of glass, quartz, Al 2 O 3, SiC, Si, GaAs, or InP, but is not limited thereto. Examples of the organic substrate include methtone foil, polyimide (PI), polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), and polyethylene naphthalate. , PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polycarbonate (PC), cellulose triacetate (CTA), The cellulose acetate propionate (CAP) may be selected from, but is not limited thereto. Since the electrode of the present invention pursues excellent light transmittance, the inorganic substrate and the organic substrate are more preferably made of a transparent material.

When introducing the organic substrate, flexibility of the electrode can be increased.

Non-limiting examples of the amine group-containing compound include alkylamines which may have substituents, cycloalkylamines which may have substituents, arylamines which may have substituents, polymers containing amine groups derived from these amines, or The polymer containing the amine group may be a combination of two or more, but is not limited thereto.

Specifically, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, isoamylamine, n-hexylamine, 2-ethylhexylamine, n-heptylamine, n-octyl Amine, isooctylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, docodecylamine, cyclopropylamine, cyclopentylamine, cyclohexylamine, arylamine, hydroxyamine, ammonium hydroxide Said, methoxyamine, 2-ethanolamine, methoxyethylamine, 2-hydroxy propylamine, methoxypropylamine, cyanoethylamine, ethoxyamine, n-butoxyamine, 2-hexyloxyamine, methoxy Methoxyethoxyethylamine, methoxyethoxyethoxyethylamine, diethylamine, dipropylamine, diethanolamine, hexamethyleneamine, morpholine, piperidine, piperazine, ethylenediamine, propylenediamine, hexamethylenediamine , Triethylenediamine, 2,2- (ethylenedioxy) bisethyla Min, triethylamine, triethanolamine, pyrrole, imidazole, pyridine, aminoacetaldehyde dimethyl acetal, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, aniline, anisidine, aminobenzonitrile, and An amine selected from the group consisting of benzylamine, polymers containing an amine group derived from the amine, or polymers containing the amine group may include two or more combinations, but is not limited thereto.

Or the polymer containing the said amine group is a conjugated polymer containing all types of amine groups; Alternatively, the present invention may be understood as a concept including a non-conjugated polymer such as polyethyleneimine (PEI), polylysine PLS, or polyarylamine (PAA).

The metal that may be used as the metal layer laminated on the amine group-containing compound layer may include a transition metal, but is not limited thereto. For example, the metal may be Ag, Cu, Au, Al, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Ti, V, Cr , Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Tl, Pb , Bi, Ga, Ge, Sb, Ac, Th, and a combination thereof may be a transition metal selected from the group consisting of.

A conductive polymer may be used for the anti-reflection layer, but is not limited thereto, and metal oxides, electrolytes, or other organic materials may be used.

The conductive polymer used as the antireflection layer may include a conductive polymer that may contain a hetero element selected from the group consisting of nitrogen, oxygen, sulfur, carbon, and combinations thereof, but is not limited thereto.

For example, the conductive polymer may be polyaniline, polythiophene, polyethylenedioxythiophene (PEDOT), polyimide, polystyrenesulfonate (PSS), polypyrrole , Polyacetylene, poly (p-phenylene) [Poly (pphenylene)], poly (p-phenylene sulfide) [Poly (p-phenylene sulfide)], poly (p-phenylene vinylene) [Poly (p-phenylenevinylene)], polythiophene poly (thienylene vinylene) [poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) [Poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate), (PEDOT: PSS)], and combinations thereof, but may be selected from poly (3,4-ethylenedioxyti) in terms of high electrical conductivity, stability and fairness. Offen) poly (styrenesulfonate) [Poly (3,4-ethylenedioxythiophene) poly (styr enesulfonate), (PEDOT: PSS)].

The polymer electrolyte in the electrolyte used as the antireflection layer is, for example, poly [9,9-bis (3 '-(N, N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7 -(9,9-dioctylfluorene)] (poly [(9,9-bis (3 '-(N, N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9 , 9-dioctylfluorene), PFN), poly (9,9-bis (4'-sulfonatobutyl) fluorene-alt-co-1,4-phenylene (poly (9,9-bis (4'- sulfonatobutyl) (fluorine-alt-co-1,4-phenylene, PFP), polystyrene sulfonic acid (PSS), poly (p-quaterphenylene-2,2'-dicarboxylic acid) (poly (p-quaterphenylene-2,2'-dicarboxylic acid)), and the monomolecular electrolyte is, for example, diphenyl fluorenederivative (DPF), tetrakis (1-imidazolyl) borate (Tetrakis (1-imidazolyl) borate, Bim4-).

The method of forming the antireflection layer is the same as the method of applying the amine group-containing compound solution to the substrate, and the redundant description will be omitted below.

According to another preferred embodiment of the present invention, forming an amine group-containing compound layer on the substrate (S210); Forming a metal layer on the amine group-containing compound layer (S220); Forming a metal oxide layer on the metal layer (S230); And performing a UV-ozone treatment on the metal oxide layer (S240). Forming an anti-reflection layer (S250); to provide a method of manufacturing a transparent electrode comprising a.

First, an amine group-containing compound layer is formed on a substrate (S210).

For example, a method of forming an amine group-containing compound layer on the substrate may include, but is not limited to, applying or self-assembling an amine group-containing compound to the surface of the substrate.

When the amine group-containing compound is applied through a solution process, the amine group-containing compound may be dissolved in a solvent such as deionized water or alcohol to prepare a solution and apply the same. The concentration of such a solution and the kind of solvent can be suitably adjusted as needed.

The amine group-containing compound solution is spin coated, roll coated, spray coated, flow coated, inkjet printed, nozzle printing, dip coated, electrophoretic deposition, tape casting, Amine group-containing by coating on the substrate by screen printing, pad printing, doctor blade coating, gravure printing, gravure offset printing, or Langmuir-Blogett method The compound layer may be formed, or the amine group-containing compound layer may be formed using a sputter deposition method, an electron beam deposition method, a thermal deposition method, or a chemical vapor deposition method in addition to the solution process, but is not limited thereto.

Specific examples of the substrate and the amine group-containing compound layer are the same as described above.

A metal layer is formed on the formed amine group-containing compound layer (S220).

The metal layer may be formed on the amine group-containing compound layer by a sputter deposition method, an electron beam deposition method, a thermal deposition method, a chemical vapor deposition method, or a coating method by a solution process.

When the metal layer is formed by a solution process, the metal-containing solution may be prepared by dissolving the metal in an appropriate solvent, and the concentration of the solution may be appropriately adjusted within a range that can be applied to the amine group-containing compound layer by those skilled in the art. have.

The solvent used for preparing the metal-containing solution may include an aqueous solvent, a non-aqueous solvent, or a mixed solvent thereof. For example, the solvent may include alcohols such as water, methanol, ethanol, isopropanol, butanol; Glycols such as ethylene glycol and glycerin; Acetates such as ethyl acetate, butyl acetate and carbitol acetate; Ethers such as diethyl ether, tetrahydrofuran and dioxane; Ketones such as methyl ethyl ketone and acetone; Hydrocarbon systems such as hexane and heptane; Aromatics such as benzene and toluene; And a halogen-substituted solvent such as chloroform, methylene chloride, carbon tetrachloride, and a mixed solvent thereof, but are not limited thereto.

The method of applying the metal-containing solution to the amine group-containing compound layer is the same as the method of applying the amine group-containing compound solution to the substrate, and the redundant description will be omitted below.

In addition, the thickness of the metal layer can be adjusted in the range of 3 ~ 20nm for electrode formation, but is not limited thereto.

Specific examples of the metal layer are the same as described above.

A metal oxide layer is formed on the formed metal layer (S230).

The metal oxide layer may be manufactured by a thin film by sputter deposition, and the specific materials included in the metal oxide layer are the same as described above.

The metal oxide layer may be formed by the sputter deposition method or the thermal evaporation method, but the manufacturing method of the metal oxide layer is not limited thereto.

After the UV-ozone treatment is performed on the formed metal oxide layer (S240), an anti-reflection layer is formed (S250).

The metal oxide layer is preferably subjected to UV-ozone treatment before the antireflection layer is laminated. When the UV-ozone treatment is performed on the metal oxide layer, organic contaminants and various particles are removed, and natural oxide film and metal contamination are removed to improve film quality, thereby improving coating properties.

The UV-ozone treatment is preferably performed for 10 to 30 minutes at a wavelength of 185 nm of short wavelength ultraviolet rays in that it sufficiently removes various contaminants.

The process of forming the anti-reflection layer is spin coating method, roll coating method, spray coating method, flow coating method, inkjet printing method, nozzle printing method, dip coating method, electrophoretic deposition method, tape casting method, The screen printing method, the pad printing method, the doctor blade coating method, the gravure printing method, the gravure offset printing method, the Langmuir-Blogett method can be carried out.

Specific examples of the anti-reflection layer are the same as described above.

Another preferred embodiment of the present invention provides an electronic device including the electrode of the multilayer structure. That is, the electrode of the present invention is a solar cell, a secondary battery or a fuel cell, and a plasma display (PDP), a liquid crystal display (TFT-LCD), an organic light emitting diode (OLED), a flexible display and an organic thin film transistor (OTFT), etc. It is usefully applicable as an electrode, especially a transparent electrode in the same field.

In particular, when the ink is combined with a low-cost manufacturing method such as a printing method together with the development of high-quality metal ink, the manufacturing cost can be significantly lowered, and thus, it is regarded as one of the potential transparent electrodes that can replace ITO.

Example

Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are only for illustrating the present invention more specifically, and the present invention is not limited thereto.

<Example 1>

1.Production sequence of the electrode

1-1. Cleaning of the board

The substrates are immersed in order of deionized water, acetone, and isopropyl alcohol in this order and cleaned by sonication for 10 minutes.

1-2. Drying of the substrate

The washed substrate is dried in an oven maintained at 60 ° C. under a nitrogen atmosphere.

1-3. UV-Ozone Treatment of Substrates

The dried substrate is UV-ozone treated for 20 minutes using a UV-ozone processor. This process is for evenly coating the subsequent amine group-containing compound layer.

1-4. Preparation of Amine Group-Containing Compound Layer

Under a condition of 10% humidity or less, a PEI thin film is prepared by applying a solution in which PEI is dissolved at a concentration of 0.3 wt% to deionized water by spin coating on the dried substrate. The thickness of the PEI thin film is formed to a thickness of several nm. At this time, the coating method and the amine group-containing compound used, the solvent of the solution, the concentration can be changed.

1-5. Heat treatment process

Under conditions of 10% humidity or less, the substrate on which the PEI thin film is formed is dried at 100 ° C. for 20 minutes using a hot plate. At this time, the drying method and temperature can be changed depending on the situation.

1-6. Fabrication of Ag Thin Films

Ag thin film is formed to a thickness of 8nm on the formed PEI thin film by thermal evaporation method. At this time, the formation method of a thin film can be changed.

1-7. Fabrication of metal oxide layer

On the formed Ag thin film, a zinc oxide (ZnO) thin film is formed to have a thickness of 30 to 40 nm by thermal evaporation or sputtering. At this time, the formation method of a thin film can be changed.

1-8 UV-Ozone Treatment

The formed metal oxide thin film is subjected to a UV-ozone treatment process for 20 minutes using a short wavelength of 185 nm ultraviolet light.

1-9. Anti-reflection layer

PEDOT: PSS thin film is manufactured using PEDOT: PSS (Clevios ™ PH1000) solution, which is a kind of conductive polymer, using a spin coating method.

The thickness of the PEDOT: PSS thin film is formed to a thickness of several tens of nm. At this time, the coating method, the polymer used, and the thickness of the PEDOT: PSS thin film can be changed.

<Example 2>

The same method as in Example 1, except that 1-9. The antireflection layer was fabricated using PEDOT: PSS (714 from Clevios ™).

Comparative Example 1

1.Production sequence of the electrode

1-1. Cleaning of the board

The substrates are immersed in order of deionized water, acetone, and isopropyl alcohol in this order and cleaned by sonication for 10 minutes.

1-2. Drying of the substrate

The washed substrate is dried in an oven maintained at 60 ° C. under a nitrogen atmosphere.

1-3. UV-Ozone Treatment of Substrates

The dried substrate is UV-ozone treated for 20 minutes using a UV-ozone processor. This process is for evenly coating the subsequent amine group-containing compound layer.

1-4. Preparation of Amine Group-Containing Compound Layer

Under a condition of 10% humidity or less, a PEI thin film is prepared by applying a solution in which PEI is dissolved at a concentration of 0.3 wt% to deionized water by spin coating on the dried substrate. The thickness of the PEI thin film is formed to a thickness of several nm. At this time, the coating method and the amine group-containing compound used, the solvent of the solution, the concentration can be changed.

1-5. Heat treatment process

Under conditions of 10% humidity or less, the substrate on which the PEI thin film is formed is dried at 100 ° C. for 20 minutes using a hot plate. At this time, the drying method and temperature can be changed depending on the situation.

1-6. Fabrication of Ag Thin Film

The Ag thin film is formed to have a thickness of 8 nm on the formed PEI thin film by thermal evaporation or sputtering. At this time, the formation method of a thin film can be changed.

1-7 UV-Ozone Treatment

The formed Ag thin film is subjected to a UV-ozone treatment process for 20 minutes using a wavelength of 185 nm of short wavelength ultraviolet rays to the formed metal oxide thin film.

1-8. Anti-reflection layer

PEDOT: PSS thin film is manufactured using PEDOT: PSS (Clevios ™ PH1000) solution, which is a kind of conductive polymer, using a spin coating method.

The thickness of the PEDOT: PSS thin film is formed to a thickness of several tens of nm. At this time, the coating method, the polymer used, and the thickness of the PEDOT: PSS thin film can be changed.

Comparative Example 2

In the same manner as in Comparative Example 1, 1-8. The antireflection layer was fabricated using PEDOT: PSS (714 from Clevios ™).

Comparative Example 3

In the same manner as in Comparative Example 1, 1-8. In the preparation of the antireflection layer, 5 wt% of ethylene glycol (EG) and dimethyl sulfoxide (DMSO) were added as a solvent to the PEDOT: PSS (714 of Clevios ™) solution.

<Comparative Example 4>

In the same manner as in Comparative Example 1, 1-7. The substrate was not subjected to UV-ozone treatment, 1-8. In the anti-reflection layer fabrication was carried out using PEDOT: PSS (PH1000 of Clevios ™).

Comparative Example 5

In the same manner as in Comparative Example 1, 1-7. UV-ozone treatment of the substrate was not performed, and 1-8. In the preparation of the antireflection layer, 5 wt% of ethylene glycol (EG) and dimethyl sulfoxide (DMSO) were added as a solvent to the PEDOT: PSS (PH1000 of Clevios ™) solution.

Comparative Example 6

In the same manner as in Comparative Example 1, 1-7. The substrate was not subjected to UV-ozone treatment, 1-8. The antireflection layer was fabricated using PEDOT: PSS (714 from Clevios ™).

Comparative Example 7

In the same manner as in Comparative Example 1, 1-7. UV-ozone treatment of the substrate was not performed, and 1-8. In the preparation of the antireflection layer, 5 wt% of ethylene glycol (EG) and dimethyl sulfoxide (DMSO) were added as a solvent to the PEDOT: PSS (714 of Clevios ™) solution.

[Property evaluation method]

(1) Measurement of transmittance: The average transmittance of 380-780 nm was measured using a UV spectrometer (Konita Minolta, CM-3700d).

(2) Sheet resistance measurement: The sheet resistance was measured by ASTM E313 standard using a sheet resistance meter (FPP-400).

division Permeability (%) Sheet resistance (Ω / □) Example 1 90.88 8.59 Example 2 90.91 8.89 Comparative Example 1 86.69 284.3 kΩ / □ Comparative Example 2 88.84 Not measurable Comparative Example 3 88.22 Not measurable Comparative Example 4 59.45 18.72 Comparative Example 5 53.50 9.37 Comparative Example 6 53.36 3.04 MΩ / □ Comparative Example 7 53.50 9.37

In Comparative Examples 4 to 7, which were not subjected to UV-ozone treatment before formation of the antireflection layer, the transmittance was very low as 50%. In Comparative Examples 5 and 7 in which a dopant was added to the antireflection layer, the sheet resistance was lowered, but the transmittance was further lowered.

In Comparative Examples 1 to 3 subjected to the UV-ozone treatment before the formation of the anti-reflection layer, the transmittance was increased to 86% to 88%, indicating that the coating property of the anti-reflection layer was significantly improved. However, the Ag thin film, which is a metal layer, was oxidized during the UV-ozone treatment, resulting in excessively high sheet resistance. Through the experimental results, it was able to derive the need for the metal oxide layer in order to prevent the side effects of the UV- ozone treatment while still maintaining the synergistic effect of the coating according to the UV- ozone treatment.

On the other hand, in the case of Comparative Example 3 in which a dopant is added to the anti-reflection layer, it can be seen that the transmittance is lowered.

In Examples 1 and 2 compared to the comparative examples, the transmittance was measured to be 90% or more, and the coating property was excellent, and the sheet resistance was also stabilized to a value of 10 (ohm / sq) or less.

Claims (11)

Board;
An amine group-containing compound layer on the substrate;
A metal layer on the amine group-containing compound layer;
A metal oxide layer on the metal layer; And
It includes a structure stacked on the metal oxide layer in the order of the anti-reflection layer,
The metal oxide layer is a UV-ozone treated transparent electrode.
The transparent electrode of claim 1, wherein the metal oxide layer has a thickness of 30 to 40 nm.
The transparent electrode of claim 1, wherein the metal oxide layer comprises zinc oxide.
The method of claim 1, wherein the antireflective layer comprises poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) [Poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), (PEDOT: PSS) Transparent electrode, characterized in that.
The method of claim 1, wherein the substrate comprises: an inorganic substrate selected from glass, quartz, Al ₂ O ₃ , SiC, Si, GaAs, InP; Or tons of foil, polyimide (PI), polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), Polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polycarbonate, PC, cellulose triacetate (CTA), cellulose acetate propio A transparent electrode, characterized in that the organic substrate is selected from cellulose acetate propionate (CAP).
The method of claim 1, wherein the metal of the metal layer is Ag, Cu, Au, Al, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Ti , V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt , Tl, Pb, Bi, Ga, Ge, Sb, Ac, Th and a combination thereof.
Forming an amine group-containing compound layer on the substrate (S210);
Forming a metal layer on the amine group-containing compound layer (S220);
Forming a metal oxide layer on the metal layer (S230);
Performing a UV-ozone treatment on the metal oxide layer (S240); And
Forming an anti-reflection layer on the UV- ozone treated metal oxide layer (S250); manufacturing method of a transparent electrode comprising a.
The method of claim 7, wherein the forming of the amine group-containing compound layer in step S210, the forming of the metal oxide layer in step S230, and the forming of the antireflective layer in step S250 are performed by spin coating and roll, respectively. Coating method, spray coating method, flow coating method, inkjet printing method, nozzle printing method, dip coating method, electrophoretic deposition method, tape casting method, screen printing method, pad printing method, doctor blade coating method The method of manufacturing a transparent electrode, characterized in that carried out by gravure printing method, gravure offset printing method, Langmuir-Blogett method, sputter deposition method, electron beam deposition method, thermal deposition method, or chemical vapor deposition method.
The method of claim 7, wherein the forming of the metal layer in S220 is performed by sputter deposition, electron beam deposition, thermal evaporation, chemical vapor deposition, or a solution process.
The method of manufacturing a transparent electrode according to claim 7, wherein the UV-ozone treatment in step S240 is performed for 10 to 30 minutes at a wavelength of short wavelength ultraviolet light of 185 to 254 nm.
An electronic device comprising the transparent electrode according to any one of claims 1 to 6.

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