KR20190129395A - Passivation With Evaporator - Google Patents
Passivation With Evaporator Download PDFInfo
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- KR20190129395A KR20190129395A KR1020180053968A KR20180053968A KR20190129395A KR 20190129395 A KR20190129395 A KR 20190129395A KR 1020180053968 A KR1020180053968 A KR 1020180053968A KR 20180053968 A KR20180053968 A KR 20180053968A KR 20190129395 A KR20190129395 A KR 20190129395A
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- passivation
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- aluminum
- aluminum oxide
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- 238000002161 passivation Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000008020 evaporation Effects 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims abstract description 14
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L51/0008—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
본 발명은 마이크로 올레드(Micro OLED) 등을 포함한 소자의 패시베이션에 관한 것이다. The present invention relates to passivation of devices including Micro OLEDs and the like.
마이크로 올레드(Micro OLED)는 고해상도와 빠른 응답속도로 인해 VR 기기 등에 적용될 수 있어 수요가 증가할 것으로 보인다. 이러한 마이크로 올레드의 기존 제조공정은 도 1과 같다. 웨이퍼에 유기물 박막을 상향식 증발원으로 형성하고, 전극을 스퍼터링으로 형성한 다음, 웨이퍼를 플립(Flip)시켜 페이스 업(Face Up) 상태가 되게 하고, 원자층 증착법(ALD)을 이용하여 산화알루미늄(Al2O3)을 얇게 형성하여 패시베이션하고 최종적으로 PI 패턴을 프린팅으로 형성하여 마감한다.Micro OLED is expected to increase as it can be applied to VR devices due to its high resolution and fast response speed. Existing manufacturing process of such micro oled is shown in FIG. The organic thin film is formed on the wafer as a bottom-up evaporation source, the electrode is sputtered, and then the wafer is flipped to a face up state, and aluminum oxide (AlD) is used by atomic layer deposition (ALD). 2 O 3 ) to form a thin passivation and finally to form a PI pattern by printing to finish.
상기와 같은 종래의 ALD 패시베이션 공정은 알루미늄 전구체와 산소 기체를 흘려주며 퍼지 가스로 퍼징하는 단계를 거치기 때문에 전구체에 포함된 불순물이 완전히 제거되지 않아 문제될 수 있다. 또한, 반응성을 높이기 위해 플라즈마 ALD를 실시하는 과정에서 기존 박막을 손상시키는 문제도 지닌다. The conventional ALD passivation process as described above may be problematic because the impurities contained in the precursor are not completely removed because the aluminum precursor and the oxygen gas flow through the purge gas. In addition, there is a problem of damaging the existing thin film in the process of performing the plasma ALD to increase the reactivity.
등록특허 10-1318241호는 태양전지의 패시베이션에서 산화알루미늄박막을 ALD로 형성하는 기술에 대해 기재한다. 상기 공보 기술 역시 ALD에 의한 패시베이션이 지니는 상기 문제점을 동일하게 나타낼 수 있다. Patent 10-1318241 describes a technique for forming an aluminum oxide thin film into ALD in passivation of a solar cell. The publication technique may also present the same problem of passivation by ALD.
따라서 본 발명의 목적은 ALD를 대체할 수 있는 새로운 산화알루미늄(Al2O3) 패시베이션 방법을 제공하고자 한다.It is therefore an object of the present invention to provide a novel aluminum oxide (Al 2 O 3 ) passivation method that can replace ALD.
상기 목적에 따라 본 발명은 알루미늄 증발원을 이용하여 알루미늄 증발물을 공급하는 동시에 산소 기체를 공급하여 산화알루미늄(Al2O3) 박막을 형성함으로써 패시베이션 하는 것을 특징으로 하는 산화알루미늄(Al2O3) 패시베이션 방법을 제공한다.The present invention oxidation, characterized in that the passivation by forming an aluminum oxide to aluminum evaporation water supply oxygen gas at the same time for supplying (Al 2 O 3) thin film by using an aluminum evaporation source of aluminum (Al 2 O 3) in accordance with the purpose It provides a passivation method.
본 발명에 따르면 알루미늄 증발원으로부터 알루미늄 증발물이 공급되고 동시에 산소 기체가 공급되어 고온의 알루미늄 증발물이 산소와 반응하여 산화알루미늄 박막을 형성하기 때문에 전구체를 이용할 때와 달리 불순물이 개입하지 않는다. 또한, 증발물은 이온을 형성하지 않기 때문에 아크(arc) 손상을 입힐 염려가 없어 안정적이고 신뢰도 높은 패시베이션이 이루어질 수 있다. According to the present invention, since the aluminum evaporate is supplied from the aluminum evaporation source and at the same time oxygen gas is supplied so that the hot aluminum evaporate reacts with oxygen to form an aluminum oxide thin film, impurities do not intervene unlike when using a precursor. In addition, since the evaporate does not form ions, there is no fear of causing arc damage, so that stable and reliable passivation can be achieved.
도 1은 종래 마이크로 올레드의 제조공정과 여기에 적용된 패시베이션 방법을 보여주는 순서도이다.
도 2는 본 발명에 따른 마이크로 올레드의 제조공정과 여기에 적용된 패시베이션 방법을 보여주는 순서도이다.1 is a flow chart showing a manufacturing process of a conventional micro oled and a passivation method applied thereto.
Figure 2 is a flow chart showing the manufacturing process of the micro-oleed according to the present invention and the passivation method applied thereto.
이하, 첨부도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설명한다. Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
도 2는 본 발명에 따라 증발원을 이용하여 패시베이션을 실시하는 마이크로 올레드 제조공정 순서도이다. Figure 2 is a flow diagram of a micro-oleed manufacturing process for performing passivation using an evaporation source according to the present invention.
마이크로 올레드의 제조과정은 다음과 같다.The manufacturing process of the micro oled is as follows.
웨이퍼에 유기물 박막을 상향식 증발원으로 형성한 다음, 금속 전극은 스퍼터링 방법으로 형성한다. 다음, 웨이퍼를 플립(Flip)시켜 페이스 업(Face Up) 상태가 되게 하는 종래 공정과 달리 플립하지 않은 상태에서 알루미늄 증발원을 사용하여 알루미늄 증발물을 분사하면서 챔버에 산소 기체를 도입하여 알루미늄 증발물이 산소와 반응하여 산화알루미늄 박막으로 형성되게 한다. 즉, 증발 공정을 이용하여 전극 면 위에 산화알루미늄(Al2O3) 박막을 형성함으로써 패시베이션한다. 산화알루미늄(Al2O3)으로 패이베이션 된 웨이퍼를 플립시키고 여기에 PI 패턴을 형성한다. After forming the organic thin film on the wafer as a bottom-up evaporation source, the metal electrode is formed by the sputtering method. Next, unlike the conventional process of flipping the wafer to face up, the aluminum evaporate is introduced by introducing oxygen gas into the chamber while spraying the aluminum evaporate using an aluminum evaporation source without flipping. Reacts with oxygen to form an aluminum oxide thin film. That is, passivation is performed by forming an aluminum oxide (Al 2 O 3 ) thin film on the electrode surface using an evaporation process. Flip the wafer passivated with aluminum oxide (Al 2 O 3 ) and form a PI pattern thereon.
기존의 ALD에 의한 패시베이션을 증발공정으로 대체함으로써 파티클 등의 이물이 잔류하지 않으며, 증발 공정은 전하를 띤 입자없이 박막이 형성되기 때문에 박막 손상없이 패시베이션할 수 있다. By replacing the existing passivation by ALD with an evaporation process, foreign substances such as particles do not remain, and the evaporation process can passivate without damaging the thin film because the thin film is formed without charged particles.
본 발명의 패시베이션 방법은 마이크로 올레드(Micro OLED), 올레드(OLED), 태양전지 등을 포함한 반도체 소자 제조에 적용될 수 있다. The passivation method of the present invention can be applied to the manufacture of semiconductor devices including micro OLEDs, OLEDs, solar cells, and the like.
본 발명의 권리는 위에서 설명된 실시 예에 한정되지 않고 청구범위에 기재The rights of the present invention are not limited to the embodiments described above, but are described in the claims.
된 바에 의해 정의되며, 본 발명의 분야에서 통상의 지식을 가진 자가 청구범위에 기재된 권리범위 내에서 다양한 변형과 개작을 할 수 있다는 것은 자명하다.As defined by the above description, it will be apparent to those skilled in the art that various modifications and adaptations can be made within the scope of the claims.
Claims (3)
상기 유기물 박막 위에 스퍼터링으로 금속 전극을 형성하는 단계;
상기 금속 전극이 형성된 상태에서 제1항의 방법으로 패시베이션 하는 단계; 및
상기 산화알루미늄(Al2O3) 박막으로 패시베이션 된 웨이퍼를 플립시키고 여기에 PI 패턴을 형성하는 단계;를 포함하는 것을 특징으로 하는 마이크로 올레드의 제조방법.
Forming an organic thin film on the wafer as a bottom-up evaporation source;
Forming a metal electrode on the organic thin film by sputtering;
Passivating the metal electrode with the method of claim 1; And
Flipping the wafer passivated with the aluminum oxide (Al 2 O 3 ) thin film and forming a PI pattern thereon.
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| KR20140102565A (en) * | 2013-02-14 | 2014-08-22 | 삼성디스플레이 주식회사 | Organic light emitting device having thin film encapsulation and method for fabricating the same |
| KR101481098B1 (en) * | 2013-07-01 | 2015-01-14 | 주식회사 선익시스템 | In-line deposition system and in-line deposition method |
| US20170009334A1 (en) * | 2015-07-09 | 2017-01-12 | Rubicon Technology, Inc. | Hard aluminum oxide coating for various applications |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20140102565A (en) * | 2013-02-14 | 2014-08-22 | 삼성디스플레이 주식회사 | Organic light emitting device having thin film encapsulation and method for fabricating the same |
| KR101481098B1 (en) * | 2013-07-01 | 2015-01-14 | 주식회사 선익시스템 | In-line deposition system and in-line deposition method |
| US20170009334A1 (en) * | 2015-07-09 | 2017-01-12 | Rubicon Technology, Inc. | Hard aluminum oxide coating for various applications |
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