KR20190115862A - A surface-emitting laser device and light emitting device including the same - Google Patents

Abstract

The present invention relates to a surface-emitting laser device and a light emitting device including the same which can prevent current crowding on an aperture edge. According to embodiments of the present invention, the surface-emitting laser device comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region which is arranged on the first reflection layer and includes a cavity; an opening region which is arranged on the active region and includes an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged on the opening region. The thickness of the insulation region becomes thinner towards the aperture. The delta doping layer is arranged on the aperture. The aperture includes an AlGa-based layer. The delta doping layer is arranged on the AlGa-based layer of the aperture.

Description

Surface light emitting laser device and light emitting device including the same {A SURFACE-EMITTING LASER DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

Embodiments relate to semiconductor devices, and more particularly, to a surface light emitting laser device and a light emitting device including the same.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors, and low power consumption, semi-permanent life, and quick response compared to conventional light sources such as fluorescent and incandescent lamps. It has the advantages of speed, safety and environmental friendliness.

In addition, when a light receiving device such as a photo detector or a solar cell is also manufactured using a group 3-5 or 2-6 compound semiconductor material of a semiconductor, the development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, car headlights and traffic lights, and sensors that detect gas or fire.

In addition, applications can be extended to high frequency application circuits, other power control devices, and communication modules. For example, in the conventional semiconductor light source device technology, there is a vertical-cavity surface-emitting laser (VCSEL), which is used for optical communication, optical parallel processing, optical connection, and the like. On the other hand, the laser diode used in such a communication module is designed to operate at a low current.

However, when the VCSEL is applied to a structured light sensor, a laser diode autofocus (LDAF), and the like, since the VCSEL operates at a high current, there is a problem of decreasing the light output or increasing the threshold current.

In other words, the epitaxial structure of the conventional VCSEL (Vertical Cavity Surface Emitting Laser) is important in the structure of the existing data optical communication, but the response speed is important, but when developing the high power PKG for the sensor, the light output and voltage Efficiency is an important characteristic.

In particular, in the sensor VCSEL package, the field-of-view (FOV) is determined by the combination of the divergence angle of the beams in the VCSEL chip and the beam angle in the diffuser. It is important to control the divergence angle of the beam in the chip, but there is a problem that the divergence angle of the beam in the VCSEL chip is uncontrolled and increases.

FIG. 1A is a higher mode oscillation photograph generated when a high current is applied in the prior art, and FIG. 1B is divergence angle of beams data according to an applied current.

As shown in FIG. 1A, when a low current is applied, a dominant mode is oscillated in an aperture, which is an emission region of a beam, as shown in (a). However, as the high current is applied, the higher mode is oscillated as shown in (b) to (d).

In addition, as shown in FIG. 1B, as the applied current increases from 3 mA to 10 mA from low to high current, the divergence angle of beams increases.

As described above, in the related art, there is a technical problem that the divergence angle of the beam is unintentionally increased while light emission is increased at the aperture edge due to higher mode oscillation generated when high current is applied.

In addition, according to FIG. 1B, when the high current is applied, not only the beam divergence angle is increased but also the intensity of the entire emitter region is not uniform, and the luminance at the aperture edge is abnormally increased. However, there is a technical problem that the brightness of the center is further lowered.

FIG. 1C is carrier density data according to the position of the aperture region in the prior art R. FIG. In FIG. 1C, the x-axis is the distance r from the aperture center to the aperture edge direction, and the y-axis is carrier, for example, hole density data according to the position.

According to FIG. 1C, current crowding C occurs in which the hole density at the aperture edge increases rapidly as it is applied from a low current to a high current, and the current density at the aperture edge is generated. The higher mode is oscillated and such higher order oscillation increases the divergence angle of beams.

In addition, in the prior art, a light diffraction phenomenon occurs at an aperture edge, and the diffraction angle of beams is increased due to the diffraction phenomenon.

Embodiments provide a surface light emitting laser device capable of preventing a current crowding phenomenon at an aperture edge and a light emitting device including the same.

In addition, the embodiment is to provide a surface light emitting laser device capable of alleviating the diffraction of light at the aperture edge and a light emitting device including the same.

The surface emitting laser device according to the embodiment may include a first electrode 215; A substrate 210 disposed on the first electrode 215; A first reflective layer 220 disposed on the substrate 210; An active region 230 disposed on the first reflective layer 220 and including a cavity; An opening region 240 disposed on the active region 230 and including an aperture 241 and an insulating region 242; A second reflective layer 250 disposed on the opening region 240; A second electrode 280 disposed on the second reflective layer 250; And a delta doping layer 241c disposed in the opening region 240.

The thickness of the insulating region 242 may be thinner in the direction of the aperture 241.

The delta doped layer 241c may be disposed on the aperture 241.

The aperture 241 may include an AlGa-based layer 241a, and the delta doped layer 241c may be disposed on the AlGa-based layer 241a of the aperture 241.

In addition, the light emitting device according to the embodiment may include the surface emitting laser device.

The embodiment can solve the problem of increasing the divergence angle of beams by preventing current crowding at the aperture edge to prevent higher mode oscillation. A light emitting laser device and a light emitting device including the same can be provided.

Embodiments can provide a surface light emitting laser device and a light emitting device including the same, which can prevent current condensation at the aperture edge to produce a uniform light output in the entire aperture area according to current diffusion.

In addition, the embodiment can provide a surface light emitting laser device and a light emitting device including the same that can solve the problem that the diffraction phenomenon of the light at the aperture edge to increase the divergence angle of the beam.

1A is a higher mode oscillation photograph generated when a high current is applied in the prior art.
FIG. 1B shows divergence angle of beams data according to an applied current in the prior art. FIG.
1C shows carrier density data according to the position of an aperture region in the prior art.
2 is a cross-sectional view of a surface light emitting laser device according to an embodiment.
3 is an enlarged view of a first region A of the surface light emitting laser device according to the embodiment shown in FIG. 2.
FIG. 4A is an enlarged view of the first embodiment of the second region B of the surface light emitting laser element according to the embodiment shown in FIG. 2.
4B shows carrier density data according to the position of the aperture region in an embodiment.
FIG. 4C is a manufacturing conceptual diagram of the first embodiment of the second region B shown in FIG. 4A.
5 is oxidation degree data according to the doping concentration in the surface light emitting laser device according to the embodiment.
6A is an enlarged view of a second embodiment of a second region B of the surface light emitting laser element according to the embodiment shown in FIG. 2.
FIG. 6B is a manufacturing conceptual diagram of the second embodiment of the second region B shown in FIG. 6A.
7A is an enlarged view of a third embodiment of a second region B of the surface light emitting laser element according to the embodiment shown in FIG. 2.
FIG. 7B is a manufacturing conceptual diagram of the third embodiment of the second region B shown in FIG. 7A.
FIG. 7C is a conceptual diagram of the 2DHG effect in the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 7A.
8A is an enlarged view of a fourth embodiment of a second region B of the surface light emitting laser element according to the embodiment shown in FIG. 2.
FIG. 8B is a manufacturing conceptual diagram of the fourth embodiment of the second region B shown in FIG. 8A.
9A is an enlarged view of a fifth embodiment of a second region B of the surface light emitting laser element according to the embodiment shown in FIG. 2.
FIG. 9B is a manufacturing conceptual diagram of the fifth embodiment of the second region B shown in FIG. 9A.
10 is a conceptual diagram of a 2DHG effect in the second region B of the surface light emitting laser device according to the embodiment shown in FIGS. 8A and 9A.
11A to 16 are cross-sectional views illustrating a process of manufacturing a semiconductor device according to the embodiment.
17 is a perspective view of a mobile terminal to which the surface light emitting laser device according to the embodiment is applied.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiments, when described as being formed on the "on or under" of each element, the on or under is It includes both the two elements are in direct contact with each other, or one or more other elements are formed indirectly between the two elements. In addition, when expressed as "on" or "under", it may include the meaning of the downward direction as well as the upward direction based on one element.

(Example)

2 is a cross-sectional view of the surface light emitting laser device 200 according to the embodiment, FIG. 3 is an enlarged view of the first region A of the surface light emitting laser device according to the embodiment shown in FIG. 2, and FIG. 4A. Is a first enlarged view of a second region B of the surface light emitting laser element according to the embodiment shown in FIG. 2.

2, the surface light emitting laser device 200 according to the embodiment may include a first electrode 215, a substrate 210, a first reflective layer 220, an active region 230, an opening region 240, One or more of the second reflective layer 250 and the second electrode 280 may be included. The opening area 240 may include an aperture 241 and an insulating area 242. The saving region 242 may be referred to as an oxide layer, and the opening region 240 may be referred to as an oxidation region, but is not limited thereto.

The embodiment may include a delta doping layer 241c disposed between the active region 230 and the second reflective layer 250. For example, the opening region 240 may include an insulating region 242, an aperture 241, and a delta doping layer 241c.

For example, the surface light emitting laser device 200 according to the embodiment may be disposed on the first electrode 215, the substrate 210 disposed on the first electrode 215, and the substrate 210. The first reflective layer 220, the active region 230 disposed on the first reflective layer 220, and including an active layer 232 (see FIG. 3), and disposed on the active region 230. An opening region 240 including an aperture 241 and an insulating region 242, a second reflective layer 250 disposed on the opening region 240, and a second reflective layer 250. It may include a second electrode 280 disposed and a delta doping layer 241c disposed between the active region 230 and the second reflective layer 250. The embodiment may further include a second contact electrode 255 and a passivation layer 270. Hereinafter, the technical features of the surface light emitting laser device 200 according to the embodiment will be described with reference to FIG. 2, and the technical effects will be described with reference to FIGS. 3 to 10. In the drawings of the embodiment, the direction of the x-axis may be a direction parallel to the longitudinal direction of the substrate 210, the y-axis may be a direction perpendicular to the x-axis.

<Substrate, first electrode>

Referring to FIG. 2, in an embodiment, the substrate 210 may be a conductive substrate or a non-conductive substrate. In the case of using a conductive substrate, a metal having excellent electrical conductivity may be used, and since the heat generated when operating the surface light emitting laser device 200 should be sufficiently dissipated, a GaAs substrate having a high thermal conductivity, or a metal substrate may be used. Si) substrate etc. can be used.

In the case of using a non-conductive substrate, an AlN substrate, a sapphire (Al ₂ O ₃ ) substrate, or a ceramic substrate may be used.

In an embodiment, the first electrode 215 may be disposed below the substrate 210, and the first electrode 215 may be disposed in a single layer or multiple layers with a conductive material. For example, the first electrode 215 may be a metal and at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). Including a single layer or a multi-layer structure to improve the electrical characteristics can increase the light output.

<1st reflective layer, 2nd reflective layer>

Referring to FIG. 2, an embodiment may include a first reflective layer 220, an active region 230, an insulating region 242, and a second reflective layer 250 disposed on the substrate 210. 2 is an enlarged view of the first region A of the surface light emitting laser device according to the embodiment shown in FIG. 2, and the surface light emitting laser device according to the embodiment of the embodiment will be described below with reference to FIG. 3.

The first reflective layer 220 may be doped with a first conductivity type. For example, the first conductivity type dopant may include an n type dopant such as Si, Ge, Sn, Se, Te, or the like.

In addition, the first reflective layer 220 may include a gallium-based compound, for example, AlGaAs, but is not limited thereto. The first reflective layer 220 may be a distributed bragg reflector (DBR). For example, the first reflective layer 220 may have a structure in which a first layer and a second layer made of materials having different refractive indices are alternately stacked at least once.

For example, as shown in FIG. 3, the first reflective layer 220 is disposed on the first group first reflective layer 221 and the first group first reflective layer 221 disposed on the substrate 210. The second group first reflective layer 222 may be included.

The first group first reflective layer 221 and the second group first reflective layer 222 may include a plurality of layers made of a semiconductor material having a compositional formula of Al _x Ga _(1-x) As (0 <x <1). As the Al in each layer increases, the refractive index of each layer may decrease, and as Ga increases, the refractive index of each layer may increase.

In addition, the thickness of each layer may be λ / 4n, λ may be a wavelength of light generated in the active region 230, and n may be a refractive index of each layer with respect to light having the aforementioned wavelength. Here, λ may be 650 to 980 nanometers (nm), and n may be the refractive index of each layer. The first reflective layer 220 having such a structure may have a reflectance of 99.999% for light in a wavelength region of about 940 nanometers.

The thickness of the layer in each of the first reflective layers 220 may be determined according to the refractive index and the wavelength λ of the light emitted from the active region 230.

In addition, as shown in FIG. 3, the first group first reflective layer 221 and the second group first reflective layer 222 may also be formed of a single layer or a plurality of layers, respectively.

For example, the first group first reflective layer 221 may include about 30-40 pairs of the first group first-first layer 221a and the first group first-second layer 221b. have. The first group first-first layer 221a may be formed thicker than the first group first-second layer 221b. For example, the first group first-first layer 221a may be formed at about 40 to 60 nm, and the first group first-2 layer 221b may be formed at about 20-30 nm.

In addition, the second group first reflective layer 222 may also include about 5 to 15 pairs of the second group first-first layer 222a and the second group first-second layer 222b. The second group first-first layer 222a may be formed thicker than the second group first-second layer 222b. For example, the second group 1-1 layer 222a may be formed at about 40 nm to about 60 nm, and the second group 1-2 layer 222 b may be formed at about 20 nm to about 30 nm.

In addition, as shown in FIG. 3, the second reflective layer 250 may include a gallium-based compound, for example, AlGaAs, and the second reflective layer 250 may be doped with a second conductivity type dopant. The second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like. Meanwhile, the first reflective layer 220 may be doped with a p-type dopant, and the second reflective layer 250 may be doped with an n-type dopant.

The second reflective layer 250 may also be a distributed Bragg reflector (DBR). For example, the second reflective layer 250 may have a structure in which a plurality of layers made of materials having different refractive indices are alternately stacked at least once.

Each layer of the second reflective layer 250 may include AlGaAs, and in detail, may be formed of a semiconductor material having a compositional formula of Al _x Ga _(1-x) As (0 <x <1). Herein, when Al increases, the refractive index of each layer may decrease, and when Ga increases, the refractive index of each layer may increase. In addition, each layer of the second reflective layer 250 may have a thickness of λ / 4n, λ may be a wavelength of light emitted from the active layer, and n may be a refractive index of each layer with respect to light having the aforementioned wavelength.

The second reflective layer 250 having such a structure may have a reflectance of 99.9% with respect to light in a wavelength region of about 940 nanometers.

The second reflective layer 250 may be formed by alternately stacking layers, and the number of pairs of layers in the first reflective layer 220 may be greater than the number of pairs of layers in the second reflective layer 250. In this case, as described above, the reflectance of the first reflective layer 220 may be about 99.999%, which may be greater than 99.9% of the reflectance of the second reflective layer 250.

In an embodiment, the second reflective layer 250 is spaced apart from the first region second reflecting layer 251 and the first group second reflecting layer 251 adjacent to the active region 230 in the active region 230. The second group second reflective layer 252 may be disposed.

As shown in FIG. 3, the first group second reflective layer 251 and the second group second reflective layer 252 may also be formed of a single layer or a plurality of layers, respectively.

For example, the first group second reflective layer 251 may include about 1 to 5 pairs of the first group 2-1 layer 251a and the first group 2-2 layer 251b. have. The first group 2-1 layer 251a may be formed thicker than the first group 2-2 layer 251b. For example, the first group 2-1 layer 251a may be formed at about 40-60 nm, and the first group 2-2 layer 251b may be formed at about 20-30 nm.

In addition, the second group second reflection layer 252 may also include about 5 to 15 pairs of the second group 2-1 layer 252a and the second group 2-2 layer 252b. The second group 2-1 layer 252a may be formed thicker than the second group 2-2 layer 252b. For example, the second group 2-1 layer 252a may be formed at about 40 to 60 nm, and the second group 2-2 layer 252b may be formed at about 20 to 30 nm.

<Active area>

3, the active region 230 may be disposed between the first reflective layer 220 and the second reflective layer 250.

The active region 230 may include an active layer 232 and at least one cavity 231 and 233. For example, as shown in FIG. 3, the active region 230 includes an active layer 232, a first cavity 231 disposed below the active layer 232, and a second cavity 233 disposed above the active layer 232. It may include. In an exemplary embodiment, the active region 230 may include both the first cavity 231 and the second cavity 233, or may include only one of the two.

The active layer 232 may include any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, and a quantum line structure.

The active layer 232 may include a well layer 232a and a barrier layer 232b using a compound semiconductor material of group III-V elements. The well layer 232a may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer 232b. The active layer 232 may be formed in a 1 to 3 pair structure such as InGaAs / AlxGaAs, AlGaInP / GaInP, AlGaAs / AlGaAs, AlGaAs / GaAs, GaAs / InGaAs, but is not limited thereto. Dopants may not be doped in the active layer 232.

Next, the first cavity 231 and the second cavity 233 may be formed of Al _y Ga _(1-y) As (0 <y <1) material, but is not limited thereto. For example, the first cavity 231 and the second cavity 233 may each include a plurality of layers made of Al _y Ga _(1-y) As.

For example, the first cavity 231 may include a first-first cavity layer 231a and a first-second cavity layer 231b. The first-first cavity layer 231a may be further spaced apart from the active layer 232 than the first-second cavity layer 231b. The first-first cavity layer 231a may be formed thicker than the first-second cavity layer 231b, but is not limited thereto.

In addition, the second cavity 233 may include a 2-1 cavity layer 233a and a 2-2 cavity layer 233b. The 2-2 cavity layer 233b may be further spaced apart from the active layer 232 than the 2-1 cavity layer 233a. The 2-2 cavity layer 233b may be formed thicker than the 2-1 cavity layer 233a, but is not limited thereto. In this case, the second-second cavity layer 233b may be formed to about 60 to 70 nm, and the first-first cavity layer 231a may be formed to about 40 to 55 nm, but is not limited thereto.

<Opening area>

Referring back to FIG. 2, in an embodiment, the opening region 240 may include an insulating region 242, an aperture 241, and a delta doping layer 241c.

The insulating region 242 may be formed of an insulating layer, for example, aluminum oxide, to act as a current blocking region, and the aperture 241 may be defined by the insulating region 242.

For example, when the opening region 240 includes aluminum gallium arsenide (AlGaAs), the AlGaAs of the opening region 240 reacts with H ₂ O to change its edge into aluminum oxide (Al ₂ O ₃ ). An insulating region 242 may be formed, and a central region that does not react with H ₂ O may be an aperture 241 made of AlGaAs.

According to an embodiment, the light emitted from the active region 230 through the aperture 241 may be emitted to the upper region, and the light transmittance of the aperture 241 may be superior to that of the insulating region 242. have.

Referring to FIG. 3 again, the insulating region 242 may include a plurality of layers, for example, a first insulating layer 242a and a second insulating layer 242b. The first insulating layer 242a may have a thickness that is the same as or different from that of the second insulating layer 242b.

4A is an enlarged view of the first embodiment of the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 2.

One of the technical problems in the embodiment is to provide a surface light emitting laser device capable of preventing current crowding at the aperture edge and a light emitting device including the same.

Another object of the embodiments is to provide a surface light emitting laser device capable of alleviating diffraction of light at an aperture edge, and a light emitting device including the same.

In order to solve this technical problem, the surface light emitting laser device according to the embodiment as shown in Figs. 2 and 4a is a delta doping layer disposed between the active region 230 and the second reflective layer 250. ) 241c.

In detail, as illustrated in FIG. 4A, the delta doped layer 241c may be disposed on the aperture 241. The delta doped layer 241c may be a layer doped with a second conductivity type element. For example, the delta doped layer 241c may be doped with any one or more of Be, Mg, C, and Zn, but is not limited thereto. The delta doped layer 241c may be a delta functional doping in the y-axis direction, which is the growth direction of the epitaxial layer, and there may be no difference in the doping concentration in the x-axis direction, which is the plane direction.

FIG. 4B is carrier density data E according to the position of the aperture region in the embodiment. For example, the x-axis of FIG. 4B is data of hole density according to the distance r from the center of the aperture.

In the prior art (R), a current crowding (C) occurs in which the hole density at the aperture edge rapidly increases as it is applied from a low current to a high current, and the current density at this aperture edge is generated. The higher mode is oscillated, and this higher order oscillation has a problem of increasing the divergence angle of beams.

According to the embodiment, the current density is concentrated at the aperture edge by distributing the delta doped layer 241c doped with the second conductivity type element to the aperture 241 by the even current diffusion in the aperture 241. By preventing the phenomenon there is a technical effect that can provide a surface light emitting laser device and a light emitting device including the same that can produce a uniform light output in the entire area of the aperture in accordance with the current diffusion. In Example (E), the second conductivity type element was carbon (C), and the concentration was about 8 × 10 ¹⁸ cm ⁻³ .

In addition, the embodiment arranges the delta doped layer 241c doped with the second conductivity type element in the aperture 241 so that the current crowding in the aperture by current diffusion in the aperture 241. The phenomenon can be prevented. Accordingly, the embodiment prevents a current crowding phenomenon at the aperture edge to prevent higher mode oscillation, thereby increasing the divergence angle of the beams. There is a technical effect.

In addition, in the embodiment, a current flowing from the second electrode 280 to the first electrode 215 flows toward the center of the opening region 240 by the delta doped layer 241c doped with a second conductivity type element. Therefore, there is a technical effect to prevent the current density phenomenon at the aperture edge to prevent higher mode oscillation and to increase the divergence angle of the beams.

Next, FIG. 4C is a manufacturing conceptual diagram of the first embodiment of the second region B shown in FIG. 4A.

As shown in FIG. 4C, an AlGa-based layer 241a for forming the opening region 240 is formed on the active region 230, and is doped by a second conductivity type element during the growth of the AlGa-based layer 241a. The delta doped layer 241c may be disposed in the AlGa based layer 241a. The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto.

The delta doped layer 241c may be a delta functional doping with respect to the y-axis direction, which is the growth direction of the AlGa-based layer 241a, and there may be no difference in doping concentration in the x-axis direction, which is the plane direction. .

In some embodiments, the delta doped layer 241c may be doped with a second conductivity type element, but is not limited thereto. For example, the delta doped layer 241c may be doped with any one or more of Be, Mg, C, and Zn, but is not limited thereto.

On the other hand, Figure 5 is the data of the degree of oxidation according to the doping concentration in the surface light emitting laser device according to the embodiment.

Referring to FIG. 5, as the doping concentration increases from the first doping concentration D1 to the second doping concentration D2, oxidation may be promoted to increase the thickness of the oxide layer.

Therefore, according to the embodiment, the oxidized process is performed after the delta doped layer 241c is formed on the AlGa series layer 241a as shown in FIG. 4C, and thus the insulating region 242 is delta-doped with the second conductivity type element. The oxidation rate in the x-axis direction can be controlled, and sharp edges can be realized by selective or predominant oxidation of the delta-doped region as shown in FIG. 4A.

In the exemplary embodiment, the delta doped layer, which was present at the insulating layer 242, is difficult to function as a conductive layer due to oxidation, and may exist as an oxide combined with oxygen, exist as pores, or partially oxidize in the insulating layer 242. It may be present in an unassigned state.

Referring to FIG. 4A, an inner end of the insulating region 242 may overlap the delta doped layer 241c in a first direction (x-axis direction).

In an embodiment, the minimum thickness of the insulating region 242 may be in contact with the delta doped layer 241c. For example, sharp edges due to dominant oxidation of the insulating region 242 may be in contact with the delta doped layer 241c positioned in the aperture 241.

According to the embodiment, as shown in FIG. 4A, while the delta doping layer 241c is present in the aperture 241, the thickness of the insulating region 242 may be formed to be thinner in the direction of the aperture 241. For example, in an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

Accordingly, according to the exemplary embodiment, the insulating region 242 may have the second thickness T2 in the inner region adjacent to the aperture 241 to be thinner than the first thickness T1 in the outer region. The problem of increasing the divergence angle of the beams can be solved by alleviating the diffraction of the light.

In an embodiment, the first thickness T1 of the outer region of the insulating region 242 may be about 5 nm to 50 nm. If the thickness of the insulating region 242 is less than 5 nm, problems may occur in current and optical confinement. On the other hand, when the thickness of the insulating region 242 exceeds 50nm, there is a problem of increasing the driving voltage or increasing the beam divergence angle. In addition, since the thickness of the insulating region 242 is controlled to 10 nm to 30 nm, the effects of current and optical restraint may be further increased, and the problem of increase in the divergence angle of the beam may be minimized.

In an embodiment, the doping concentration of the delta doping layer 241c may be about 1X10 ¹⁶ to 1X10 ²⁰ atoms / cm ^{3. When} the oxidation process is performed on the AlGa-based layer 241a through the doping concentration in this range, As the oxidation proceeds preferentially along the delta doping layer 241c, the thickness of the insulating region 242 may be formed to be thinner in the direction of the aperture 241 as shown in FIG. 4A.

The dope concentration of the delta-doped layer 241c may be ¹ × ^{10 16} atoms / cm ^{3 or} more, which is a background carrier density, and the dope concentration of the delta-doped layer 241c may be ¹ × ^{10 20} atoms /. If cm ³ is exceeded, deterioration of crystal quality may occur.

In addition, in the embodiment, the doping concentration of the delta doped layer 241c is preferably controlled at about 1X10 ¹⁷ to 1X10 ¹⁹ atoms / cm ³ , so that the oxidation is more preferentially performed in the delta doped layer 241c, so that the inner side is sharper. By implementing the insulating region 242, the diffraction phenomenon of light at the edge of the aperture 241 may be remarkably alleviated to prevent an increase in the divergence angle of the beam, and the crystal quality of the AlGa series layer 241a may be further improved. Can be.

Also, in an embodiment, the dopant concentration of the delta doped layer 241c may be higher than the dopant concentration doped in another layer. For example, in an embodiment, the dopant concentration of the delta doped layer 241c may be higher than that of the second conductivity type dopant of the second reflective layer 250, so that oxidation proceeds preferentially along the delta doped layer 241c. As a result, the insulating region 242 may be formed to be thinner in the direction of the aperture 241.

In an embodiment, the delta doped layer 241c may be formed in atomic unit thickness, and may be confirmed by an analytical device such as SIMS. According to the embodiment, the oxidation rate of the insulating region 242 is controlled by delta doping of the second conductivity type element to implement sharp edges by selective or predominant oxidation of the delta-doped region. The second thickness T2 in the inner region adjacent to the aperture 241 of 242 is formed to be thinner than the first thickness T1 in the outer region, thereby alleviating the diffraction of light in the aperture 241 to reduce the beam The problem of increasing the divergence angle of beams can be solved.

6A is an enlarged view of the second embodiment of the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 2.

The second embodiment may employ the technical features of the first embodiment, and will be described below with reference to the technical features of the second embodiment.

In the second embodiment, the aperture 241 may include a plurality of AlGa-based layers 241a, and may include, for example, a first AlGa-based layer 241a1 and a second AlGa-based layer 241a2. And the Al concentration may be different. The first AlGa-based layer 241a1 and the second AlGa-based layer 241a2 may include different materials.

For example, the first AlGa-based layer 241a1 may include Al _z1 Ga _{(1- z1 )} As (0 <Z1 <1), and the second AlGa-based layer 241a2 may be Al _z2 Ga _{( 1- z2 )} N (0 <Z2 <1) may be included, but is not limited thereto.

For example, the second Al concentration of the second AlGa-based layer 241a2 may be higher than that of the first Al of the first AlGa-based layer 241a1. In addition, the delta doped layer 241c may be disposed on the second AlGa-based layer 241a2 having a high Al concentration.

In this case, the Al concentration of Al _z2 Ga _{(1- z2 )} N (0 <Z2 <1) of the second AlGa-based layer 241a2 may be graded.

For example, the Al concentration of the second AlGa-based layer 241a2 may have the highest Al concentration at its center, and gradually increase in the growth direction (y-axis direction) or the opposite direction (-y-axis direction). Can be lowered.

A manufacturing method of the second embodiment of the second region B shown in FIG. 6A will be described with reference to FIG. 6B.

According to the second embodiment, to form the opening region 240, the AlGa-based layer 241a includes a first AlGa-based layer 241a1 having a first Al concentration, and at the center thereof, a second higher than the first concentration. The Al concentration may include the second AlGa-based layer 241a2.

For example, in the second embodiment, the first AlGa-based layer 241a1 may be a first AlGaAs layer having a first Al concentration, and the second AlGa-based layer 241a2 may be a second AlGaN layer having a second Al concentration. have.

In addition, the second embodiment may include a delta doping layer 241c in the second AlGa-based layer 241a2.

According to the second exemplary embodiment, since the second AlGa-based layer 241a2 having a high Al concentration is included in the center, the oxidation process is predominantly performed in the second AlGa-based layer 241a2 in the x-axis direction in the oxidation process. Likewise, the insulating region 242 may be formed to be thinner in the direction of the aperture 241. For example, in an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

In addition, in the second embodiment, when the second AlGa-based layer 241a2 includes Al _z Ga _(1-z) N (0 <z <1), the Al _z Ga _(1-z) N (0 < The Al concentration of z <1) can be graded. For example, the Al concentration may be the highest in the central portion of the second AlGa-based layer 241a2 itself, and the Al concentration may gradually decrease in the -y axis direction opposite to the y axis direction.

According to the embodiment, by providing the second AlGa-based layer 241a2 in which the Al concentration is graded, oxidization is predominantly performed at the center thereof, so that sharper edges can be realized.

In some embodiments, the delta doped layer 241c may be disposed on the second AlGa-based layer 241a2.

Accordingly, as the oxidized process is performed after the delta doped layer 241c is formed on the second AlGa based layer 241a2 in the second embodiment, the delta doped layer 241c exists in the aperture 241 as shown in FIG. 6A. The thickness of the insulating region 242 may be formed in a sharp edge shape toward the aperture 241.

For example, in an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

According to an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region. Accordingly, in the embodiment, the second thickness T2 in the inner region adjacent to the aperture 241 of the insulating region 242 is formed to be thinner than the first thickness T1 in the outer region, so that the light in the aperture 241 is reduced. The problem of increasing the divergence angle of the beams can be solved by alleviating the diffraction phenomenon of the beam.

According to the second embodiment, as Al concentration is graded in the second AlGa-based layer 241a2, oxidation may be predominantly performed at the center thereof, and at the same time, delta doping is performed in the second AlGa-based layer 241a2. The layer 241c may be disposed to implement sharper edges.

Accordingly, according to the second exemplary embodiment, the second thickness T2 in the inner region adjacent to the aperture 241 of the insulating region 242 is formed to be thinner than the first thickness T1 in the outer region. In 241, light diffraction may be alleviated to increase the divergence angle of beams.

In addition, in the second embodiment, the delta-doped layer 241c doped with the second conductivity type element is disposed in the aperture 241 so that current is concentrated in the aperture by current diffusion in the aperture 241. Surface light emitting laser device capable of solving the problem of increasing the divergence angle of beams by preventing high mode oscillation at the aperture edge by preventing crowding phenomenon and the same It can provide a light emitting device comprising.

Next, FIG. 7A is an enlarged view of the third embodiment of the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 2.

The third embodiment may employ the technical features of the first and second embodiments, and will be described below with reference to the technical features of the third embodiment.

In the third embodiment, the aperture 241 may include a first AlGa-based layer 241a1 and a GaAs-based layer 241a3.

For example, the first AlGa-based layer 241a1 may include Al _z Ga _(1-z) As (0 <z <1), and the GaAs-based layer 241a3 may include a GaAs layer. However, it is not limited thereto.

In addition, the third embodiment may include a delta doping layer 241c in the GaAs-based layer 241a3.

A manufacturing method of the third embodiment of the second region B shown in FIG. 7A will be described with reference to FIG. 7B.

According to the third embodiment, in order to form the opening region 240, the first AlGa-based layer 241a1 may be included, and a GaAs-based layer 241a3 may be included at the center thereof.

In this case, a delta doped layer 241c may be disposed on the GaAs-based layer 241a3.

According to the third exemplary embodiment, the delta doped layer 241c may be disposed on the GaAs-based layer 241a3.

Accordingly, after the delta doped layer 241c is formed on the GaAs-based layer 241a3 in the third embodiment, as the oxidation process proceeds, the delta doped layer 241c exists in the aperture 241 as shown in FIG. 7A. The thickness of the region 242 may be formed in the shape of a sharp edge in the direction of the aperture 241.

For example, in an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

According to an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region. Accordingly, in the embodiment, the second thickness T2 in the inner region adjacent to the aperture 241 of the insulating region 242 is formed to be thinner than the first thickness T1 in the outer region, so that the light in the aperture 241 is reduced. The problem of increasing the divergence angle of the beams can be solved by alleviating the diffraction phenomenon of the beam.

In addition, the third embodiment arranges the delta-doped layer 241c doped with the second conductivity type element in the aperture 241 so that current is concentrated in the aperture by current diffusion in the aperture 241. Surface light emitting laser device capable of solving the problem of increasing the divergence angle of beams by preventing high mode oscillation at the aperture edge by preventing crowding phenomenon and the same It can provide a light emitting device comprising.

7C is a conceptual diagram of 2DHG (2D hole gas) effect in the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 7A.

According to the third embodiment, as shown in FIG. 7A, a GaAs-based layer 241a3 is disposed between the first AlGa-based layers 241a1, thereby forming 2D dimensional hole gas (2DHG) as shown in FIG. 7C to spread current through 2DHG. (current spreading) can significantly improve carrier distribution uniformity in the aperture region.

In addition, according to the third embodiment, a GaAs layer, which is a GaAs series layer 241a3, is disposed between an AlGaAs layer, which is an AlGa series layer 241a, to form 2D dimensional hole gas (2DHG), thereby providing current spreading through 2DHG. Prevents current crowding at the aperture and prevents higher mode oscillations at the aperture edge, thereby increasing the divergence angle of beams. It is possible to provide a surface light emitting laser device and a light emitting device including the same.

FIG. 8A is a fourth embodiment of a second region B of the surface light emitting laser device according to the embodiment shown in FIG. 2, and FIG. 8B is a manufacturing process diagram of the fifth embodiment shown in FIG. 8A.

The fourth embodiment may employ the technical features of the first to third embodiments, and will be described below with reference to the technical features of the fourth embodiment.

According to the fourth embodiment, the delta doped layer 241c may be disposed in the lower region 241b of the aperture 241.

Referring to FIG. 8B, an AlGa-based layer 241a for forming the opening region 240 is formed on the active region 230, and the doping of the second conductivity type element during the growth of the AlGa-based layer 241a is performed. The delta doped layer 241c may be disposed in the lower region 241b of the AlGa series layer 241a.

The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto. The delta doped layer 241c may be doped with a second conductivity type element, but is not limited thereto. For example, the delta doped layer 241c may be doped with any one or more of Be, Mg, C, and Zn, but is not limited thereto.

According to the fourth embodiment, the delta doped layer 241c doped with the second conductivity type element is disposed in the lower region 241b of the aperture 241 so that the aperture edge can be spread evenly in the aperture 241. The present invention can provide a surface light emitting laser device capable of generating a uniform light output in the entire aperture according to current diffusion by preventing a current density phenomenon at the aperture edge, and a light emitting device including the same.

In addition, in the fourth embodiment, the delta-doped layer 241c doped with the second conductivity type element is disposed in the lower region 241b of the aperture 241 so as to be apertured by current diffusion in the aperture 241. ) Can prevent current crowding. Accordingly, the embodiment prevents a current crowding phenomenon at the aperture edge to prevent higher mode oscillation, thereby increasing the divergence angle of the beams. The present invention provides a surface light emitting laser device and a light emitting device including the same.

In addition, according to the fourth embodiment, as shown in FIG. 8A, while the delta doping layer 241c is present in the aperture 241, the thickness of the insulating region 242 may be formed to be thinner in the direction of the aperture 241. For example, in an embodiment, the thickness in the outer region of the insulating region 242 may be thicker than the thickness in the inner region adjacent to the aperture 241.

Accordingly, according to the embodiment, the insulating region 242 has a thickness in the inner region adjacent to the aperture 241 to be thinner than the thickness in the outer region, thereby alleviating the diffraction of light in the aperture 241 to reduce the beam The problem of increasing the divergence angle of beams can be solved.

FIG. 10 is a conceptual view of a 2DHG effect in the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 8A, wherein the delta doping layer 241c is between an AlGa-based layer and a p-AlGaAs layer. Can be placed in. For example, the second reflective layer 250 may include a p-AlGaAs layer, the second cavity 233 may include a GaAs layer, and the delta doped layer 241c may have a second reflective layer 250. It is disposed between the second cavity 233 may be able to spread the current through the 2DHG effect.

According to the embodiment, the oxidization rate of the insulating region 242 may be controlled by delta doping of the second conductivity type element to implement sharp edges by selective or predominant oxidation of the delta doped region. As shown in FIG. 8A, a 2D dimensional hole gas (2DHG) is formed by the growth of a delta doping layer (241c) in the lower region 241b of the aperture 241, and the current spreading through the 2DHG is performed. Carrier distribution uniformity can be improved in the aperture region.

Accordingly, according to the fourth exemplary embodiment, the delta doped layer 241c doped with the second conductivity type element is disposed in the lower region 241b of the aperture 241 so that the aperture can be spread evenly in the aperture 241. A surface light emitting laser device capable of improving current injection efficiency by improving current injection efficiency by preventing current condensation at an edge and a light emitting device including the same can be provided.

In addition, in the fourth exemplary embodiment, the aperture doped by the current diffusion in the aperture 241 by disposing the delta doped layer 241c doped with the second conductivity type element in the lower region 241b of the aperture 241. A surface light emitting laser device capable of solving a problem of increasing divergence angle of beams by preventing higher mode oscillation at an edge and a light emitting device including the same can be provided.

Next, FIG. 9A is a fifth embodiment of the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 2, and FIG. 9B is a manufacturing process diagram of the fifth embodiment shown in FIG. 9A.

The fifth embodiment may employ the technical features of the first to fourth embodiments, and will be described below with reference to the technical features of the fifth embodiment.

According to the fifth embodiment, the delta doped layer 241c may be disposed in the upper region 241t of the aperture 241.

Referring to FIG. 9B, an AlGa-based layer 241a for forming the opening region 240 is formed on the active region 230, and the doping of the second conductivity type element during the growth of the AlGa-based layer 241a is performed. The delta doped layer 241c may be disposed in the upper region 241t of the AlGa series layer 241a. The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto.

FIG. 10 is a conceptual diagram of a 2DHG effect in the second region B of the surface light emitting laser device according to the embodiment shown in FIG. 9A, wherein the delta doping layer 241c is formed between an AlGa-based p-AlGaAs layer and a GaAs layer. Can be placed in. The delta doped layer 241c may be disposed in the upper region 241t of the AlGa series layer 241a.

For example, the second reflective layer 250 may include a p-AlGaAs layer, the second cavity 233 may include a GaAs layer, and the delta doped layer 241c may have a second reflective layer 250. It is disposed between the second cavity 233 may be able to spread the current through the 2DHG effect.

According to the fifth exemplary embodiment, the stiff edge may be implemented by selective or predominant oxidation of the delta-doped region by controlling the oxidation rate of the insulating region 242 by delta doping of the second conductivity type element. As shown in FIG. 9A, a 2D dimensional hole gas (2DHG) is formed in the upper region 241t of the aperture 241 by the growth of a delta doping layer 241c, and current spreading through the 2DHG is performed. As a result, carrier distribution uniformity may be improved in the aperture region.

Accordingly, according to the fifth exemplary embodiment, the delta doped layer 241c doped with the second conductivity type element is disposed in the aperture 241 so that even current spreading in the aperture 241 is performed at the edge of the aperture 241. It is possible to provide a surface light emitting laser device and a light emitting device including the same, which can improve current injection efficiency by preventing current condensation of the light, thereby improving light output and voltage efficiency.

In addition, in the fifth embodiment, an aperture edge is formed by the current diffusion in the aperture 241 by placing the delta doped layer 241c doped with the second conductivity type element in the upper region 241t of the aperture 241. A surface light emitting laser device capable of solving a problem of increasing divergence angle of beams by preventing higher mode oscillation at an edge and a light emitting device including the same can be provided.

<2nd contact electrode, passivation layer, 2nd electrode>

Referring back to FIG. 2, the surface-emitting laser device 200 according to the embodiment is mesa etched from the second reflective layer 250 to the insulating region 242 and the active region 230 in the region around the aperture 241. Can be. In addition, even a part of the first reflective layer 220 may be mesa etched.

The second contact electrode 255 may be disposed on the second reflective layer 250, and the area where the second reflective layer 250 is exposed in the area between the second contact electrodes 255 is the aperture 241 described above. May correspond to

The contact electrode 255 may improve the contact property between the second reflective layer 250 and the second electrode 280 described later.

In FIG. 2, a passivation layer 270 may be disposed on the side and top surfaces of the mesa-etched light emitting structure and the top surface of the first reflective layer 220. The passivation layer 270 may also be disposed on the side surface of the surface emission laser device 200 separated by device units to protect and insulate the surface emission laser device 200. The passivation layer 270 may be made of an insulating material, for example, nitride or oxide. For example, the passivation layer 270 may include at least one of polymide, silica (SiO ₂ ), or silicon nitride (Si ₃ N ₄ ).

The passivation layer 270 may be thinner than the second contact electrode 255 at the top surface of the light emitting structure, and thus the second contact electrode 255 may be exposed to the upper portion of the passivation layer 270. The second electrode 280 may be disposed in electrical contact with the exposed second contact electrode 255. The second electrode 280 extends above the passivation layer 270 to supply current from the outside. I can receive it.

The second electrode 280 may be made of a conductive material, for example, may be a metal. For example, the second electrode 280 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed into a structure.

The embodiment can solve the problem of increasing the divergence angle of beams by preventing current crowding at the aperture edge to prevent higher mode oscillation. A light emitting laser device and a light emitting device including the same can be provided.

Embodiments can provide a surface light emitting laser device and a light emitting device including the same, which can prevent current condensation at the aperture edge to produce a uniform light output in the entire aperture area according to current diffusion.

In addition, the embodiment can provide a surface light emitting laser device and a light emitting device including the same that can solve the problem that the diffraction phenomenon of the light at the aperture edge to increase the divergence angle of the beam.

Hereinafter, a method of manufacturing a surface light emitting laser device according to an embodiment will be described with reference to FIGS. 11A through 16, including the method of each embodiment.

First, as shown in FIG. 11A, a light emitting structure including a first reflective layer 220, an active region 230, and a second reflective layer 250 is formed on a substrate 210.

The substrate 210 may be formed of a material suitable for growth of a semiconductor material or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate.

For example, when the substrate 210 is a conductive substrate, a metal having excellent electrical conductivity may be used, and a GaAs substrate having high thermal conductivity because it must be able to sufficiently dissipate heat generated when the surface light emitting laser device 200 is operated. Or a metal substrate, or a silicon (Si) substrate or the like.

In addition, when the substrate 210 is a non-conductive substrate, an AlN substrate, a sapphire (Al ₂ O ₃ ) substrate, or a ceramic substrate may be used.

In addition, in the exemplary embodiment, a substrate of the same type as the first reflective layer 220 may be used as the substrate 210. For example, when the substrate 210 is a GaAs substrate of the same type as the first reflective layer 220, the lattice constant coincides with the first reflective layer 210, so that a defect such as lattice mismatch does not occur in the first reflective layer 220. Can be.

Next, a first reflective layer 220 may be formed on the substrate 210, and FIG. 11B is an enlarged view of the first-second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 11A. to be.

Hereinafter, a surface light emitting laser device according to an exemplary embodiment will be described with reference to FIGS. 11A and 11B.

The first reflective layer 220 may be grown using a chemical vapor deposition method (CVD) or a molecular beam epitaxy (MBE) or a sputtering or hydroxide vapor phase epitaxy (HVPE).

The first reflective layer 220 may be doped with a first conductivity type. For example, the first conductivity type dopant may include an n type dopant such as Si, Ge, Sn, Se, Te, or the like.

The first reflective layer 220 may include a gallium-based compound, for example, AlGaAs, but is not limited thereto. The first reflective layer 220 may be a distributed bragg reflector (DBR). For example, the first reflective layer 220 may have a structure in which layers made of materials having different refractive indices are alternately stacked at least once.

For example, as shown in FIG. 11B, the first reflective layer 220 is disposed on the first group first reflective layer 221 and the first group first reflective layer 221 disposed on the substrate 210. The second group first reflective layer 222 may be included.

The first group first reflective layer 221 and the second group first reflective layer 222 may include a plurality of layers made of a semiconductor material having a compositional formula of Al _x Ga _(1-x) As (0 <x <1). If the Al in each layer increases, the refractive index of each layer may decrease, and if the Ga increases, the refractive index of each layer may increase.

In addition, as shown in FIG. 11B, the first group first reflective layer 221 and the second group first reflective layer 222 may also be formed of a single layer or a plurality of layers, respectively. For example, the first group first reflective layer 221 may include about 30-40 pairs of the first group first-first layer 221a and the first group first-second layer 221b. have. In addition, the second group first reflective layer 222 may also include about 5 to 15 pairs of the second group first-first layer 222a and the second group first-second layer 222b.

Next, the active region 230 may be formed on the first reflective layer 220.

As illustrated in FIG. 11B, the active region 230 may include an active layer 232, a first cavity 231 disposed under the active layer 232, and a second cavity 233 disposed above. In an exemplary embodiment, the active region 230 may include both the first cavity 231 and the second cavity 233, or may include only one of the two.

 The active layer 232 may include a well layer 232a and a barrier layer 232b using a compound semiconductor material of group III-V elements. The active layer 232 may be formed in a 1 to 3 pair structure such as InGaAs / AlxGaAs, AlGaInP / GaInP, AlGaAs / AlGaAs, AlGaAs / GaAs, GaAs / InGaAs, but is not limited thereto. Dopants may not be doped in the active layer 232.

The first cavity 231 and the second cavity 233 may be formed of Al _y Ga _(1-y) As (0 <y <1) material, but is not limited thereto. For example, the first cavity 231 and the second cavity 233 may each include a plurality of layers made of Al _y Ga _(1-y) As.

For example, the first cavity 231 may include a first-first cavity layer 231a and a first-second cavity layer 231b. In addition, the second cavity 233 may include a 2-1 cavity layer 233a and a 2-2 cavity layer 233b.

Next, an AlGa series layer 241a for forming the opening region 240 may be formed on the active region 230.

In example embodiments, the delta-doped layer 241c may be disposed in the AlGa-based layer 241a by the doping of the second conductivity type element during the growth of the AlGa-based layer 241a. The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto.

The AlGa-based layer 241a may include a conductive material, and may include the same material as the first reflective layer 220 and the second reflective layer 250, but is not limited thereto.

For example, when the AlGa-based layer 241a includes an AlGaAs-based material, the AlGa-based layer 241a is a semiconductor material having a composition formula of Al _x Ga _(1-x) As (0 <x <1). It may be made by, for example, can have a composition formula of Al _{0 .98 0 .02} Ga as, but the embodiment is not limited thereto.

Technical features of the AlGa series layer 241a and the delta doped layer 241c will be described later with reference to FIGS. 13A to 13E.

Next, a second reflective layer 250 may be formed on the AlGa-based layer 241a.

The second reflective layer 250 may include a gallium-based compound, for example AlGaAs. For example, each layer of the second reflective layer 250 may include AlGaAs, and in detail, may be formed of a semiconductor material having a compositional formula of Al _x Ga _(1-x) As (0 <x <1). .

The second reflective layer 250 may be doped with a second conductivity type dopant. For example, the second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. Meanwhile, the first reflective layer 220 may be doped with a p-type dopant, and the second reflective layer 250 may be doped with an n-type dopant.

The second reflective layer 250 may also be a distributed Bragg reflector (DBR). For example, the second reflective layer 250 may have a structure in which a plurality of layers made of materials having different refractive indices are alternately stacked at least once.

For example, the second reflective layer 250 may be disposed in the active region 230 than the first group second reflective layer 251 and the first group second reflective layer 251 disposed adjacent to the active region 230. The second group may include a second reflective layer 252 spaced apart from.

In addition, the first group second reflecting layer 251 and the second group second reflecting layer 252 may be formed of a single layer or a plurality of layers, respectively. For example, the first group second reflective layer 251 may include about 1 to 5 pairs of the first group 2-1 layer 251a and the first group 2-2 layer 251b. In addition, the second group second reflective layer 252 may also include about 5 to 15 pairs of the second group 2-1 layer 252a and the second group 2-2 layer 252b. .

Next, as shown in FIG. 12, the light emitting structure may be mesa-etched using a predetermined mask 300. In this case, the mesa may be etched from the second reflective layer 250 to the AlGa series layer 241a and the active region 230, and may be mesa etched to a part of the first reflective layer 220. In mesa etching, the AlGa-based layer 241a and the active region 230 may be removed from the second reflective layer 250 in the peripheral region by an inductively coupled plasma (ICP) etching method. It can be etched.

In this case, referring to 12, in the surface light emitting laser device according to the embodiment, the second region B represents the AlGa series layer 241a and the delta doped layer 241c, and Each embodiment is shown in FIGS. 13A-13E and will be described in detail later.

Next, as shown in FIG. 14, the edge region of the AlGa-based layer may be changed to the insulating region 242, and may be changed to, for example, wet oxidation. As a result, the opening region 240 including the insulating region 242 and the aperture 241 which is a non-oxidation region may be formed.

For example, when oxygen is supplied from an edge region of the AlGa-based layer 241a, AlGaAs of the AlGa-based layer may react with H ₂ O to form aluminum oxide (Al ₂ O ₃ ). At this time, by adjusting the reaction time, the center region of the AlGa-based layer does not react with oxygen, and only the edge region reacts with oxygen to form an insulating region 242 of aluminum oxide.

In addition, the embodiment may change the edge region of the AlGa based layer into the insulating region 242 through ion implantation, but is not limited thereto. During ion implantation, photons may be supplied with energy of 300 keV or more.

After the reaction process described above, conductive AlGaAs may be disposed in the central region of the opening region 240 and non-conductive Al ₂ O ₃ may be disposed in the edge region. AlGaAs in the central region may be defined as the aperture 241 as a portion where the light emitted from the active region 230 proceeds to the upper region.

In this case, referring to 14, in the surface light emitting laser device according to the embodiment, the second region B includes the insulating region 242 and the delta doped layer 241c, and Each embodiment is shown in FIGS. 15A-15E, which will be described below in conjunction with FIGS. 13A-13E.

First, FIGS. 13A and 15A are conceptual views of the first embodiment B1 of the second region B shown in FIGS. 12 and 14.

As shown in FIG. 13A, an AlGa-based layer 241a for forming the opening region 240 is formed on the active region 230, and is doped by a second conductivity type element during the growth of the AlGa-based layer 241a. The delta doped layer 241c may be disposed in the AlGa based layer 241a. The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto.

The delta doped layer 241c may be a delta functional doping with respect to the y-axis direction, which is the growth direction of the AlGa-based layer 241a, and there may be no difference in doping concentration in the x-axis direction, which is the plane direction. .

In some embodiments, the delta doped layer 241c may be doped with a second conductivity type element, but is not limited thereto. For example, the delta doped layer 241c may be doped with any one or more of Be, Mg, C, and Zn, but is not limited thereto.

According to the embodiment, the oxidation process is performed after the oxidization is promoted as the doping concentration is increased to form the delta doping layer 241c on the AlGa-based layer 241a using the principle that the thickness of the oxide layer is increased. As shown in FIG. 15A, the oxidation rate in the x-axis direction of the insulating region 242 can be controlled by the delta doping of the second conductivity type element, and the saffron can be selected by the selective or predominant oxidation of the delta-doped region. Sharp edges can be implemented.

As shown in FIG. 15A, an inner end of the insulating region 242 may overlap the delta doped layer 241c in a first direction (x-axis direction). In an embodiment, the minimum thickness of the insulating region 242 may be in contact with the delta doped layer 241c.

According to the first embodiment, as shown in FIG. 15A, while the delta doping layer 241c is present in the aperture 241, the thickness of the insulating region 242 may be made thinner in the direction of the aperture 241. For example, in the first embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

Accordingly, according to the first embodiment, the insulating region 242 is formed such that the second thickness T2 in the inner region adjacent to the aperture 241 is thinner than the first thickness T1 in the outer region. In 241, light diffraction may be alleviated to increase the divergence angle of beams.

In the first embodiment, the first thickness T1 of the outer region of the insulating region 242 may be about 5 nm to 50 nm. If the thickness of the insulating region 242 is less than 5 nm, problems may occur in current and optical confinement. On the other hand, when the thickness of the insulating region 242 exceeds 50nm, there is a problem of increasing the driving voltage or increasing the beam divergence angle. In addition, since the thickness of the insulating region 242 is controlled to 10 nm to 30 nm, the effects of current and optical restraint may be further increased, and the problem of increase in the divergence angle of the beam may be minimized.

In the first embodiment, the doping concentration of the delta doping layer 241c may be about 1X10 ¹⁶ to 1X10 ²⁰ atoms / cm ³ , and the oxidation process is performed on the AlGa-based layer 241a through the doping concentration in this range. As the oxidation proceeds preferentially along the delta doping layer 241c, the insulating region 242 may be formed to be thinner in the direction of the aperture 241 as shown in FIG. 15A.

The dope concentration of the delta-doped layer 241c may be ¹ × ^{10 16} atoms / cm ^{3 or} more, which is a background carrier density, and the dope concentration of the delta-doped layer 241c may be ¹ × ^{10 20} atoms /. If cm ³ is exceeded, deterioration of crystal quality may occur.

In addition, in the first embodiment, the doping concentration of the delta doped layer 241c is preferably controlled at about 1 × ^{10 17} to 1 × ^{10 19} atoms / cm ³ , so that oxidation is more preferentially performed in the delta doped layer 241c, so By implementing the sharp insulating region 242, the diffraction phenomenon of light at the edge of the aperture 241 can be remarkably alleviated to prevent an increase in the divergence angle of the beam, and the crystal quality of the AlGa series layer 241a is further improved. Can be improved.

In an embodiment, the delta doped layer 241c may be formed in atomic unit thickness, and may be confirmed by an analytical device such as SIMS.

According to the first embodiment, the oxidization rate of the insulating region 242 is controlled by the delta doping of the second conductivity type element, so that the sharp edge is implemented by the selective or predominant oxidation of the delta-doped region. The second thickness T2 in the inner region adjacent to the aperture 241 of the region 242 is formed to be thinner than the first thickness T1 in the outer region, thereby alleviating the diffraction of light in the aperture 241. The problem of increasing the divergence angle of beams can be solved.

13B and 15B are conceptual views of the second embodiment B2 of the second region B shown in FIGS. 12 and 14.

The second embodiment may employ the technical features of the first embodiment, and will be described below with reference to the technical features of the second embodiment.

Referring to FIG. 13B, in order to form the opening region 240 according to the second embodiment, the AlGa-based layer 241a includes a first AlGa-based layer 241a1 having a first Al concentration, and is formed at the center thereof. The second AlGa-based layer 241a2 having a second Al concentration higher than one concentration may be included.

For example, in the second embodiment, the first AlGa-based layer 241a1 may be a first AlGaAs layer having a first Al concentration, and the second AlGa-based layer 241a2 may be a second AlGaN layer having a second Al concentration. have.

In addition, the second embodiment may include a delta doping layer 241c in the second AlGa-based layer 241a2.

According to the second embodiment, since the second AlGa-based layer 241a2 having a high Al concentration is included in the center, the oxidation process is predominantly performed in the second AlGa-based layer 241a2 in the x-axis direction in the oxidation process, and thus, FIG. Likewise, the insulating region 242 may be formed to be thinner in the direction of the aperture 241. For example, in an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

In addition, in the second embodiment, when the second AlGa-based layer 241a2 includes Al _z Ga _(1-z) N (0 <z <1), the Al _z Ga _(1-z) N (0 < The Al concentration of z <1) can be graded. For example, the Al concentration may be the highest in the central portion of the second AlGa-based layer 241a2 itself, and the Al concentration may gradually decrease in the -y axis direction opposite to the y axis direction.

According to the embodiment, by providing the second AlGa-based layer 241a2 in which the Al concentration is graded, oxidization is predominantly performed at the center thereof, so that sharper edges can be realized.

In addition, according to the second exemplary embodiment, the delta doped layer 241c may be disposed on the second AlGa-based layer 241a2.

Accordingly, as the oxidized process is performed after the delta doped layer 241c is formed on the second AlGa-based layer 241a2 in the second embodiment, the delta doped layer 241c exists in the aperture 241 as shown in FIG. 15B. The thickness of the insulating region 242 may be formed in a sharp edge shape toward the aperture 241.

For example, in an embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

According to the second embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region. Accordingly, in the second embodiment, the second thickness T2 in the inner region adjacent to the aperture 241 of the insulating region 242 is formed to be thinner than the first thickness T1 in the outer region, thereby opening the aperture 241. The problem of increasing the divergence angle of the beams can be solved by alleviating the diffraction of the light.

According to the second embodiment, as Al concentration is graded in the second AlGa-based layer 241a2, oxidation may be predominantly performed at the center thereof, and at the same time, delta doping is performed in the second AlGa-based layer 241a2. The layer 241c may be disposed to implement sharper edges.

Accordingly, according to the second exemplary embodiment, the second thickness T2 in the inner region adjacent to the aperture 241 of the insulating region 242 is formed to be thinner than the first thickness T1 in the outer region. In 241, light diffraction may be alleviated to increase the divergence angle of beams.

In addition, in the second embodiment, the delta-doped layer 241c doped with the second conductivity type element is disposed in the aperture 241 so that current is concentrated in the aperture by current diffusion in the aperture 241. Surface light emitting laser device capable of solving the problem of increasing the divergence angle of beams by preventing high mode oscillation at the aperture edge by preventing crowding phenomenon and the same It can provide a light emitting device comprising.

13C and 15C are conceptual views of the third embodiment B3 of the second region B shown in FIGS. 12 and 14.

The third embodiment may employ the technical features of the first and second embodiments, and will be described below with reference to the technical features of the third embodiment.

According to the third embodiment, in order to form the opening region 240, the first AlGa-based layer 241a1 may be included, and a GaAs-based layer 241a3 may be included at the center thereof.

According to the third exemplary embodiment, the delta doped layer 241c may be disposed on the GaAs-based layer 241a3.

Accordingly, as the oxidized process is performed after the delta doped layer 241c is formed on the GaAs-based layer 241a3 in the third embodiment, as shown in FIG. 15C, the delta doped layer 241c exists in the aperture 241 and is insulated. The thickness of the region 242 may be formed in the shape of a sharp edge in the direction of the aperture 241.

For example, in the third embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region adjacent to the aperture 241.

According to the third embodiment, the first thickness T1 in the outer region of the insulating region 242 may be thicker than the second thickness T2 in the inner region. Accordingly, in the third embodiment, the second thickness T2 in the inner region adjacent to the aperture 241 of the insulating region 242 is formed to be thinner than the first thickness T1 in the outer region, thereby opening the aperture 241. The problem of increasing the divergence angle of the beams can be solved by alleviating the diffraction of the light.

In addition, the third embodiment arranges the delta-doped layer 241c doped with the second conductivity type element in the aperture 241 so that current is concentrated in the aperture by current diffusion in the aperture 241. Surface light emitting laser device capable of solving the problem of increasing the divergence angle of beams by preventing high mode oscillation at the aperture edge by preventing crowding phenomenon and the same It can provide a light emitting device comprising.

According to the third embodiment, as shown in FIG. 15C, a GaAs-based layer 241a3 is disposed between the first AlGa-based layers 241a1, thereby forming a 2D dimensional hole gas (2DHG) as shown in FIG. 7C to spread current through 2DHG. (current spreading) can significantly improve carrier distribution uniformity in the aperture region.

In addition, according to the third embodiment, a GaAs layer, which is a GaAs series layer 241a3, is disposed between an AlGaAs layer, which is an AlGa series layer 241a, to form 2D dimensional hole gas (2DHG), thereby providing current spreading through 2DHG. Prevents current crowding at the aperture and prevents higher mode oscillations at the aperture edge, thereby increasing the divergence angle of beams. It is possible to provide a surface light emitting laser device and a light emitting device including the same.

13D and 15D are conceptual views of the fourth embodiment B4 of the second region B shown in FIGS. 12 and 14.

The fourth embodiment may employ the technical features of the first to third embodiments, and will be described below with reference to the technical features of the fourth embodiment.

Referring to FIG. 13D, an AlGa-based layer 241a for forming the opening region 240 is formed on the active region 230, and as shown in FIG. 15D, a second conductivity type is formed during the growth of the AlGa-based layer 241a. The delta doped layer 241c may be disposed in the lower region 241b of the AlGa-based layer 241a by the element doping.

The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto. The delta doped layer 241c may be doped with a second conductivity type element, but is not limited thereto. For example, the delta doped layer 241c may be doped with any one or more of Be, Mg, C, and Zn, but is not limited thereto.

According to the fourth embodiment, the delta doped layer 241c doped with the second conductivity type element is disposed in the lower region 241b of the aperture 241 so that the aperture edge can be spread evenly in the aperture 241. The present invention can provide a surface light emitting laser device capable of generating a uniform light output in the entire aperture according to current diffusion by preventing a current density phenomenon at the aperture edge, and a light emitting device including the same.

In addition, in the fourth exemplary embodiment, a current crowding phenomenon is performed at an aperture edge by disposing a delta doped layer 241c doped with a second conductivity type element in the lower region 241b of the aperture 241. A surface light emitting laser device and a light emitting device including the same may be provided to prevent a problem of increasing divergence angle of beams by preventing higher mode oscillation.

In addition, according to the fourth embodiment, as shown in FIG. 15D, while the delta doping layer 241c is present in the aperture 241, the thickness of the insulating region 242 may be formed to be thinner in the direction of the aperture 241. For example, in an embodiment, the thickness in the outer region of the insulating region 242 may be thicker than the thickness in the inner region adjacent to the aperture 241.

Accordingly, according to the embodiment, the insulating region 242 has a thickness in the inner region adjacent to the aperture 241 to be thinner than the thickness in the outer region, thereby alleviating the diffraction of light in the aperture 241 to reduce the beam The problem of increasing the divergence angle of beams can be solved.

According to the fourth embodiment, the oxidization rate of the insulating region 242 may be controlled by delta doping of the second conductivity type element to implement sharp edges by selective or predominant oxidation of the delta doped region. As shown in FIG. 15D, 2D dimensional hole gas (2DHG) is formed in the lower region 241b of the aperture 241 by the growth of a delta doping layer 241c, and current spreading through the 2DHG is performed. As a result, carrier distribution uniformity may be improved in the aperture region.

Accordingly, according to the fourth exemplary embodiment, the delta doped layer 241c doped with the second conductivity type element is disposed in the aperture 241 so that even current spreading in the aperture 241 is performed at the edge of the aperture 241. It is possible to provide a surface light emitting laser device and a light emitting device including the same, which can improve current injection efficiency by preventing current condensation of the light, thereby improving light output and voltage efficiency.

In addition, in the fourth exemplary embodiment, the aperture doped by the current diffusion in the aperture 241 by disposing the delta doped layer 241c doped with the second conductivity type element in the lower region 241b of the aperture 241. A surface light emitting laser device capable of solving a problem of increasing divergence angle of beams by preventing higher mode oscillation at an edge and a light emitting device including the same can be provided.

13E and 15E are conceptual views of the fifth embodiment B5 of the second region B shown in FIGS. 12 and 14.

The fifth embodiment may employ the technical features of the first to fourth embodiments, and will be described below with reference to the technical features of the fifth embodiment.

Referring to FIG. 13E, an AlGa-based layer 241a for forming the opening region 240 is formed on the active region 230, and the doping of the second conductivity type element during the growth of the AlGa-based layer 241a is performed. The delta doped layer 241c may be disposed in the upper region 241t of the AlGa series layer 241a. The AlGa-based layer 241a may include a material such as Al _z Ga _(1-z) As (0 <z <1), but is not limited thereto.

The delta doped layer 241c may be disposed between the p-AlGaAs layer and the GaAs layer, which are AlGa series layers. The delta doped layer 241c may be disposed in the upper region 241t of the AlGa series layer 241a.

As shown in FIG. 15E, according to the fifth embodiment, the oxidative rate of the insulating region 242 is controlled by the delta doping of the second conductivity type element so that sharp edges are selected by selective or predominant oxidation of the delta doped region. ) Can be implemented.

Accordingly, as shown in FIG. 9A, a 2D dimensional hole gas (2DHG) is formed by growing a delta doping layer (241c) in the upper region 241t of the aperture 241, and current spreading through 2DHG is performed. May improve carrier distribution uniformity in the aperture region.

According to the fifth embodiment, the delta-doped layer 241c doped with the second conductivity type element is disposed in the aperture 241 so that the current at the edge of the aperture 241 can be spread evenly in the aperture 241. It is possible to provide a surface light emitting laser device and a light emitting device including the same, which can improve current injection efficiency by preventing a compaction phenomenon, thereby improving light output and voltage efficiency.

In addition, in the fifth embodiment, an aperture edge is formed by the current diffusion in the aperture 241 by placing the delta doped layer 241c doped with the second conductivity type element in the upper region 241t of the aperture 241. A surface light emitting laser device capable of solving a problem of increasing divergence angle of beams by preventing higher mode oscillation at an edge and a light emitting device including the same can be provided.

Next, as shown in FIG. 16, the second contact electrode 255 may be disposed on the second reflective layer 250, and the second reflective layer 250 is exposed in an area between the second contact electrodes 255. The area may correspond to the aperture 241 which is the center area of the opening area 240 described above. The contact electrode 255 may improve contact characteristics between the second reflective layer 250 and the second electrode 255, which will be described later.

Next, the passivation layer 270 disposed on the contact electrode 255 may have a thickness at the top surface of the light emitting structure to be thinner than the second contact electrode 255, where the second contact electrode 255 is the passivation layer. 270 may be exposed to the top.

The passivation layer 270 may include at least one of polymide, silica (SiO ₂ ), or silicon nitride (Si ₃ N ₄ ).

Next, a second electrode 280 that is in electrical contact with the exposed second contact electrode 255 may be disposed, the second electrode 280 is extended to the top of the passivation layer 270 is disposed from the outside Current can be supplied.

The second electrode 255 may be made of a conductive material, for example, may be a metal. For example, the second electrode 255 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It can be formed as.

In addition, a first electrode 215 may be disposed under the substrate 210. Before disposing the first electrode 215, a portion of the bottom surface of the substrate 210 may be removed through a predetermined grinding process to improve heat dissipation efficiency.

The first electrode 215 may be made of a conductive material, for example, metal. For example, the first electrode 215 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed into a structure.

The above-described semiconductor device may be a laser diode, and two reflection layers may act as resonators. At this time, electrons and holes are supplied to the active layer from the first reflective layer 220 of the first conductivity type and the second reflective layer 250 of the second conductivity type, and the light emitted from the active region 230 is reflected inside the resonator. When amplified and the threshold current is reached, it can be emitted to the outside through the aperture 241 described above.

The light emitted from the semiconductor device according to the embodiment may be light of a single wavelength and a single phase, and the single wavelength region may vary according to the composition of the first reflective layer 220, the second reflective layer 250, and the active region 230. have.

17 is a perspective view of a mobile terminal to which the surface light emitting laser device according to the embodiment is applied.

As illustrated in FIG. 17, the mobile terminal 1500 of the embodiment may include a camera module 1520, a flash module 1530, and an auto focusing device 1510 provided at a rear surface thereof. Here, the auto focus device 1510 may include one of a package of the surface light emitting laser device according to the above-described embodiment as a light emitting unit.

The flash module 1530 may include a light emitting device that emits light therein. The flash module 1530 may be operated by camera operation of a mobile terminal or control of a user.

The camera module 1520 may include an image capturing function and an auto focus function. For example, the camera module 1520 may include an auto focus function using an image.

The auto focus device 1510 may include an auto focus function using a laser. The auto focus device 1510 may be mainly used in a condition in which the auto focus function using the image of the camera module 1520 is degraded, for example, a proximity or a dark environment of 10 m or less. The auto focus device 1510 may include a light emitting unit including a vertical cavity surface emitting laser (VCSEL) semiconductor device, and a light receiving unit converting light energy such as a photodiode into electrical energy.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, but are not necessarily limited to one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to this combination and modification are included in the scope of the embodiments.

Although the above description has been made with reference to the embodiments, these are merely examples and are not intended to limit the embodiments, and those of ordinary skill in the art to which the embodiments pertain may have various examples that are not illustrated above without departing from the essential characteristics of the embodiments. It will be appreciated that eggplant modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the embodiments set forth in the appended claims.

The first electrode 215, the substrate 210, the first reflective layer 220, the active region 230,
Aperture 241 (aperture), insulating region 242, opening region 240,
Second reflective layer 250, second electrode 280, delta doping layer 241c

Claims (15)

A first electrode;
A substrate disposed on the first electrode;
A first reflective layer disposed on the substrate;
An active region disposed on the first reflective layer and including a cavity;
An opening region disposed on the active region and including an aperture and an insulating region;
A second reflective layer disposed on the opening region;
A second electrode disposed on the second reflective layer; And
And a delta doping layer disposed in the opening region.
The thickness of the insulating region is thinned in the aperture direction,
And a delta doped layer disposed in the aperture. According to claim 1,
And a first thickness in an outer region of the insulating region is thicker than a second thickness in an inner region adjacent to the aperture. According to claim 1,
And an inner end of the insulating region overlapping the delta doped layer in a first direction. The method of claim 1,
And the minimum thickness of the insulating region is in contact with the delta doped layer. According to claim 1,
The aperture includes a first AlGa-based layer and a second AlGa-based layer,
And a second Al concentration of the second AlGa based layer is higher than that of the first Al of the first AlGa based layer. The method of claim 5,
And a delta doped layer disposed in the second AlGa-based layer having the second Al concentration. The method of claim 6,
And the first AlGa-based layer and the second AlGa-based layer include different materials. The method of claim 7, wherein
The first AlGa-based layer includes Al _z Ga _(1-z) As (0 <z <1), and the second AlGa-based layer is Al _z Ga _(1-z) N (0 <z <1). Surface emitting laser device comprising a. The method of claim 8,
And Al concentration of Al _z Ga _(1-z) N (0 <z <1) of the second AlGa-based layer is graded. According to claim 1,
The aperture includes a first AlGa-based layer and a GaAs-based layer surface-emitting laser device. The method of claim 10,
The first AlGa-based layer includes Al _z Ga _(1-z) As (0 <z <1), and the GaAs-based layer includes a GaAs layer. The method of claim 11,
Surface-emitting laser device wherein the delta doping layer is disposed in the GaAs-based layer. According to claim 1,
And the delta doped layer is disposed in the lower region of the aperture. According to claim 1,
And the delta doped layer is disposed in an upper region of the aperture. A light emitting device comprising the surface emitting laser device of any one of claims 1 to 14.