KR20200044424A - A surface-emitting laser device and light emitting device including the same - Google Patents

Abstract

An embodiment of the present invention relates to a surface light emitting laser element capable of preventing a divergence angle from being increased due to a sharp interface, and a light emitting device including the same. According to the embodiment of the present invention, the surface light emitting laser element comprises: a substrate; a first reflection layer disposed on the substrate; an active layer disposed on the first reflection layer; and a second reflection layer disposed on the active layer and including an aperture area. The aperture area may include a first insulating layer and a second insulating layer disposed on the first insulating layer. A length of the first insulating layer may be longer than a length of the second insulating layer.

Description

Surface light emitting laser element and light emitting device including the same {A SURFACE-EMITTING LASER DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

The embodiment relates to a semiconductor device, and more particularly, to a surface light emitting laser device and a light emitting device including the same.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages such as having a wide and easy to adjust band gap energy, and can be used in various ways as light emitting devices, light receiving devices, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductor group 3 or 2-6 compound semiconductor materials of semiconductors are red, green, and green due to the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and white light with high efficiency can be realized by using fluorescent materials or combining colors. Low power consumption, semi-permanent life, and quick response compared to conventional light sources such as fluorescent and incandescent lamps It has the advantages of speed, safety and environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group 3 or 2-6 compound semiconductor material of a semiconductor, development of the device material absorbs light in various wavelength regions to generate a photocurrent. By doing so, it is possible to use light in various wavelength ranges from gamma rays to radio wavelength ranges. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, and thus can be easily used for power control or microwave circuits or communication modules.

Therefore, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD) display device, a white light emission that can replace a fluorescent lamp or an incandescent light bulb Applications are expanding to diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire.

In addition, applications can be expanded to high-frequency application circuits, other power control devices, and communication modules. For example, among conventional semiconductor light source device technologies, there is a vertical-cavity surface-emitting laser (VCSEL), which is used in optical communication, optical parallel processing, and optical connection. Meanwhile, in the case of a laser diode used in such a communication module, it is designed to operate at a low current.

On the other hand, the response speed was important in the existing data communication structure, but as it is recently applied to a sensor high voltage package (High Power PKG), optical output and voltage efficiency are important characteristics.

For example, a 3D sensing camera is a camera capable of capturing depth information of an object, and has recently been spotlighted by augmented reality. Meanwhile, a separate sensor is mounted for depth sensing of the camera module, and is divided into two types: a structured light (SL) method and a time of flight (ToF) method.

In the structured light (SL) method, after emitting a laser of a specific pattern to a subject, the depth of the pattern is analyzed by analyzing the degree of deformation of the pattern according to the shape of the subject's surface, and the result is synthesized with a picture taken by an image sensor to obtain a 3D image.

On the other hand, the ToF method is a method in which the laser returns to the subject, measures the return time, calculates the depth, and then synthesizes it with the picture taken by the image sensor to obtain 3D shooting results.

Accordingly, while the SL method requires the laser to be positioned very accurately, the ToF technology has an advantage in mass production in that it relies on an improved image sensor, and one method or both methods can be employed in one mobile phone. It might be.

For example, a 3D camera called True Depth can be implemented on the front side of a mobile phone in the SL method, and a ToF method can be applied on the back side.

However, when the VCSEL is applied to a ToF sensor, a structured light sensor, or a LDAF (Laser Diode Autofocus), it operates at a high current, resulting in problems such as a decrease in luminous power output or an increase in a threshold current.

In other words, the response structure of the previous VCSEL (Vertical Cavity Surface Emitting Laser) structure was important in the structure of the existing data optical communication, but the light output and voltage when developing a high voltage package for sensors (High Power PKG) Efficiency is an important characteristic.

In particular, in the VCSEL package for sensors, the field-of-view (FOV) is determined by the combination of the divergence angle of beams in the VCSEL chip and the beam angle in the diffuser. It is important to control the beam divergence angle of the chip, but there is a problem in that the beam divergence angle of the VCSEL chip is not controlled and increases as shown below.

Figure 1a is a high-order mode (higher mode) oscillation picture generated when applying a high current in the prior art, Figure 1b is the divergence angle (divergence angle of beams) data according to the applied current.

As shown in FIG. 1A, in the prior art, when a low current is applied, a dominant mode is oscillated in an aperture, which is a diverging region of a beam, as shown in FIG. 1A (a). However, as a high current is applied, a higher mode is oscillated as shown in (b) to (d) of FIG. 1A.

In addition, it can be seen that the divergence angle of the beams increases as the applied current increases from low current to high current from 3mA to 10mA as shown in FIG. 1B.

As described above, in the prior art, there is a technical problem in that the divergence angle of the beam is unintentionally increased while light emission is increased at the aperture edge due to a higher mode oscillation occurring when a high current is applied.

In addition, according to FIG. 1B, when the high current is applied, not only the beam divergence angle is increased, but the intensity of the entire emitter region being laser beam is not uniform, and the brightness at the aperture edge is abnormally increased. However, there is a technical problem that the brightness of the center is further deteriorated.

Particularly, in the prior art, an oxidation layer is disposed to define an aperture, which is an emission region of the beam. When the oxide layer has an abrupt interface in the aperture edge region, the beam divergence angle is intended. In addition to being increased, stress caused by a sudden compositional difference is generated, causing problems in current characteristics and reliability.

Next, FIG. 1C is carrier density data according to the position of the aperture region in the prior art (R). In FIG. 1C, the x-axis is a distance r from the aperture center to the aperture edge, and the y-axis is a carrier according to its location, for example, hole density data.

According to FIG. 1C, current crowding (C) occurs in which the hole density at the aperture edge rapidly increases as the current is applied from the low current to the high current density at the aperture edge. Thereby, a higher mode is oscillated, and such a higher mode oscillation increases the divergence angle of the beams.

In addition, in the prior art, a diffraction phenomenon of light is generated at an aperture edge, and such a diffraction phenomenon increases the divergence angle of the beams.

In addition, the divergence angle may be influenced by the position of the oxidation layer defining the aperture in the prior art. In the prior art, the divergence of the beam as the position of the oxide layer is disposed between the node and the antinode in the optical field. ) Has a problem of widening.

An embodiment is to provide a surface light emitting laser device and a light emitting device including the same, which can solve the problem of increasing the divergence angle of beams.

In addition, an embodiment of the present invention is to provide a surface light emitting laser element and a light emitting device including the same, which can prevent a current crowding phenomenon at an aperture edge.

The surface-emitting laser device according to the embodiment includes a substrate, a first reflective layer disposed on the substrate, an active layer disposed on the first reflective layer, and a second reflective layer disposed on the active layer and including an aperture region. In addition, the aperture region may include a first insulating layer and a second insulating layer disposed on the first insulating layer.

The length of the first insulating layer may be longer than the length of the second insulating layer.

The length of the first insulating layer may range from 1.1 to 2.0 times the length of the second insulating layer.

Further comprising a third insulating layer disposed a predetermined distance inward from the outer side of the second reflective layer, the length of the second insulating layer is longer than the third insulating layer, may be shorter than the length of the first insulating layer have.

The thickness of the second insulating layer may be thinner than the thickness of the first insulating layer.

The AlGa-based transition layer is disposed between the active layer and the second reflective layer, and the Al composition is graded, and the AlGa-based transition layer is the first AlGa-based transition disposed in the first region above the first insulating layer. A layer and a second AlGa-based transition layer disposed under the first insulating layer may be included.

The composition of Al in the first AlGa series transition layer is graded in the first range of 0.12 to 0.80, and the composition of Al in the second AlGa series transition layer may be graded in the second range of 0.30 to 0.65.

The surface emitting laser device according to the embodiment includes a first reflective layer 220, an active layer 232 on the first reflective layer 220, a first insulating layer 242b, and an aperture 241, and the active layer The aperture region 240 is disposed on the 232, the second reflective layer 250 on the aperture region 240, and is disposed between the active layer 232 and the second reflective layer 250, The Al composition may include an AlGa-based transition layer 242 graded and a second insulating layer 242e disposed between the active layer 232 and the second reflective layer 250.

The second insulating layer 242e may extend from the end of the first insulating layer 242b in the direction of the aperture 241 to be disposed on the first insulating layer 242b.

The second insulating layer 242e may be an insulating layer in which a part of the AlGa-based transition layer is oxidized.

The AlGa-based transition layer 242 includes a first AlGa-based transition layer 242a1 disposed in a first region above the first insulating layer 242b, and the second insulating layer 242e is the first The 2-1 insulating layer 242e1 may be disposed in the upper second region of the insulating layer 242b.

The AlGa-based transition layer 242 may further include a second AlGa-based transition layer 242a2 disposed under the first insulating layer 242b.

The second insulating layer 242e may further include a second-2 insulating layer 242e2 disposed under the first insulating layer 242b.

The 2-1 length L21 of the 2-1 insulating layer 242e1 may be shorter than the first length L1 of the first insulating layer 242b.

The 2-2 length L22 of the 2-2 insulating layer 242e2 may be shorter than the 2-1 length L21 of the 2-1 insulating layer 242e1.

The second reflective layer 250

The third insulating layer 243 is disposed at a predetermined distance from the outer side of the second reflective layer 250 to the inside, and the second length of the second insulating layer 242e is that of the third insulating layer 243. It may be longer than the third length (L3).

The 2-1 thickness T21 of the 2-1 insulating layer 242e1 may be thinner than the first thickness T1 of the first insulating layer 242b.

The first thickness T1 of the first insulating layer 242b may be thinner than the third thickness T3 of the third insulating layer 243.

The composition of Al in the first AlGa-based transition layer 242a1 may be graded in a first range of 0.12 to 0.80.

The composition of Al in the second AlGa-based transition layer 242a2 may be graded in a second range of 0.30 to 0.65.

The second composition range graded in the second AlGa series transition layer 242a2 may be within the first composition range of Al graded in the first AlGa series transition layer 242a1.

The first insulating layer 242b may be positioned at a node position of a laser oscillated from the active layer 232.

The second insulating layer 242e may be positioned at a node position of a laser oscillated from the active layer 232.

In addition, the light emitting device according to the embodiment may include the surface emitting laser element.

The embodiment can provide a surface light emitting laser element and a light emitting device including the same, which can solve the problem of increasing the beam divergence angle at the aperture edge.

For example, as the second insulating layer 242e extends in the direction of the aperture 241 from the end of the first insulating layer 242b, the first insulating layer 242b is disposed on the first insulating layer 242b. The interface of the first insulating layer 242b at the boundary between the layer 242b and the aperture 241 may implement a sharp state, and the divergence angle may be prevented from increasing due to the sharp interface SI.

In addition, the embodiment may provide a surface light emitting laser element and a light emitting device including the same, which improves reliability by improving crystal quality at the aperture edge, and can produce uniform light output in the entire aperture region.

Also, for example, as the second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 and is disposed on the first insulating layer 242b, 1 Since the crystal quality of the insulating layer 242b can be maintained or improved, and the crystal quality of the aperture 241 can also be maintained or improved, it is more uniform than the aperture edge as well as the entire area including the center than the conventional one. It is possible to provide a surface light emitting laser element capable of generating one light output and a light emitting device including the same.

In addition, the embodiment can solve the problem of increasing the divergence angle of the beam by preventing high-mode oscillation by preventing current crowding at the aperture edge. It is possible to provide a surface light emitting laser element and a light emitting device including the same.

For example, as the second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 and is disposed on the first insulating layer 242b, the defect Determination of the first insulating layer 242b by blocking the expansion of the (DL) to the first insulating layer 242b, which is an oxide layer defining the aperture 241 by current confinement, thereby protecting the first insulating layer 242b. The quality can be maintained or improved than the existing one, thereby improving electrical reliability, and accordingly, acceleration in a higher mode can be prevented even when a high current is applied.

In an embodiment, the second insulating layer 242e extends a certain distance from the end of the first insulating layer 242b in the direction of the aperture 241, and thus is disposed on the first insulating layer 242b. The problem that the divergence angle of the beam is increased at the aperture edge can be solved, and the reliability is improved by improving the crystal quality of the first insulating layer 242b and the aperture 241 at the aperture edge, thereby improving uniformity in the entire aperture region. There is a complex technical effect that can produce one light output.

Figure 1a is a high-order mode (higher mode) oscillation photo generated when applying a high current in the prior art.
Figure 1b is the divergence angle of the beam according to the applied current in the prior art (divergence angle of beams) data.
Figure 1c is carrier density data according to the position of the aperture (aperture) region in the prior art.
2 is a cross-sectional view of a surface light emitting laser device according to an embodiment.
3 is an enlarged view of a first area A1 of the surface light emitting laser device according to the embodiment shown in FIG. 2.
4A is a first enlarged view of a second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 2.
4B is an enlarged photograph of a third area A3 of the second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 4A.
5 is a partially enlarged view of a surface light emitting laser device according to the background art.
6A and 6B show a near field image and a far field spectrum of a surface light emitting laser device according to the background art.
7A and 7B show a near field image and a far field spectrum of a surface light emitting laser device according to an embodiment.
8 is an enlarged view of a composition example of a fourth region A4 of the surface light emitting laser device according to the embodiment shown in FIG. 4A.
9 is a second enlarged view of the second region A2 of the surface light emitting laser device according to the embodiment shown in FIG. 2.
FIG. 10 is a third enlarged view of the second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 2.
11 is a surface light emitting laser package to which the surface light emitting laser device according to the embodiment is applied.
12 is a cross-sectional view of a surface light emitting laser device according to another embodiment.
13 is a perspective view of a mobile terminal to which a surface light emitting laser device according to an embodiment is applied according to an embodiment.

Hereinafter, exemplary embodiments that can be specifically implemented for solving the above problems will be described with reference to the accompanying drawings.

In the description of the embodiment, when described as being formed on "on (under) or under (under)" (on or under) of each element, the top (top) or bottom (bottom) (on or under) is This includes both two elements directly contacting each other or one or more other elements formed indirectly between the two elements. Also, when expressed as "on (up) or down (on or under)", it may include the meaning of the downward direction as well as the upward direction based on one element.

(Example)

2 is a cross-sectional view of the surface light emitting laser device 200 according to the embodiment, and FIG. 3 is an enlarged view of the first area A1 of the surface light emitting laser device according to the embodiment shown in FIG. 2.

Referring to FIG. 2, the surface light emitting laser device 200 according to the embodiment includes a first electrode 215, a substrate 210, a first reflective layer 220, an active layer 232, an aperture region 240, The second reflective layer 250 and the second electrode 280 may include any one or more. The aperture region 240 may include an aperture 241 (aperture) and a first insulating layer 242b. The first insulating layer 242b may be referred to as an oxide layer, and the aperture region 240 may be referred to as an oxidation region or an opening region, but is not limited thereto.

Also, the embodiment may include an AlGa-based transition layer 242 and a second insulating layer 242e. The AlGa-based transition layer 242 may include a first AlGa-based transition layer 242a1 and a second AlGa-based transition layer 242a2. The second insulating layer 242e may include a 2-1 insulating layer 242e1 and a 2-2 insulating layer 242e2.

For example, referring to FIG. 2, the surface light emitting laser device 200 according to the embodiment includes a first reflective layer 220, an active layer 232 disposed on the first reflective layer 220, and a first insulation An aperture region 240 disposed on the active layer 232 having a layer 242b and an aperture 241, a second reflective layer 250 disposed on the aperture region 240, and the The AlGa-based transition layer 242, which is disposed between the active layer 232 and the second reflective layer 250, and which Al composition is graded, and the second insulation disposed between the active layer 232 and the second reflective layer 250. Layer 242e may be included. The embodiment may further include a second contact electrode 255 and a passivation layer 270.

Hereinafter, technical features of the surface light emitting laser device 200 according to the embodiment will be described with reference to FIGS. 2 and later. In the drawing of the embodiment, the direction of the x-axis may be a direction parallel to the longitudinal direction of the substrate 210, and the y-axis may be a direction perpendicular to the x-axis.

<Substrate, first electrode>

Referring to FIG. 2, in an embodiment, the substrate 210 may be a conductive substrate or a non-conductive substrate. When a conductive substrate is used, a metal having excellent electrical conductivity can be used, and the heat generated during operation of the surface light emitting laser element 200 must be sufficiently dissipated, so a GaAs substrate with high thermal conductivity or a metal substrate or silicon ( Si) A substrate or the like can be used.

Further, the substrate 210 of the embodiment may use a semiconductor material, and doping may be performed. For example, the substrate 210 may be a semiconductor material doped with an n-type conductivity type, but embodiments are not limited thereto.

In the embodiment, when a non-conductive substrate is used as the substrate 210, an AlN substrate, a sapphire (Al ₂ O ₃ ) substrate, or a ceramic-based substrate may be used.

In an embodiment, the first electrode 215 may be disposed under the substrate 210, and the first electrode 215 may be disposed in a single layer or multiple layers of a conductive material. For example, the first electrode 215 may be a metal, and at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au) may be used. It can be formed in a single-layer or multi-layer structure to improve the electrical characteristics, thereby increasing the light output.

<First reflective layer, second reflective layer>

3 is an enlarged view of a first area A1 of the surface light emitting laser device according to the embodiment shown in FIG. 2, referring to FIG. 3, the first reflective layer 220 may be doped with a first conductivity type You can. For example, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, and Te.

In addition, the first reflective layer 220 may include a gallium-based compound, for example, AlGaAs, but is not limited thereto. The first reflective layer 220 may be a Distributed Bragg Reflector (DBR). For example, the first reflective layer 220 may have a structure in which a first layer and a second layer made of a material having different refractive indices are alternately stacked at least once or more.

For example, as shown in FIG. 3, the first reflective layer 220 is disposed on the first group first reflective layer 221 and the first group first reflective layer 221 disposed on the substrate 210. The second group first reflective layer 222 may be included.

The first group first reflective layer 221 and the second group first reflective layer 222 may include a plurality of layers made of a semiconductor material having a composition formula of Al _x Ga _(1-x) As (0 <x <1). When the Al in each layer increases, the refractive index of each layer decreases, and when Ga increases, the refractive index of each layer may increase.

In addition, the thickness of each layer may be λ / 4n, λ may be a wavelength of light generated in the active layer 232, and n may be a refractive index of each layer for light having the above-described wavelength. Here, λ may be 650 to 980 nanometers (nm), and n may be a refractive index of each layer. The first reflective layer 220 having such a structure may have a reflectivity of 99.999% with respect to light in a wavelength region of about 940 nanometers.

The thickness of the layer in each first reflective layer 220 may be determined according to each refractive index and the wavelength λ of light emitted from the active layer 232.

Also, as shown in FIG. 3, the first group first reflective layer 221 and the second group first reflective layer 222 may be formed of a single layer or a plurality of layers, respectively.

For example, the first group first reflective layer 221 may include about 30 to 40 pairs of the first group first-first layer 221a and the first group first-second layer 221b. have. The first group first-first layer 221a may be formed thicker than the first group first-second layer 221b. For example, the first group first-first layer 221a may be formed at about 40-60 nm, and the first group first-second layer 221b may be formed at about 20-30 nm.

Also, the second group first reflective layer 222 may also include about 5 to 15 pairs of the second group first-first layer 222a and the second group first-second layer 222b. The second group first-first layer 222a may be formed thicker than the second group 1-2 layer 222b. For example, the second group first-first layer 222a may be formed at about 40-60 nm, and the second group 1-2 layer 222b may be formed at about 20-30 nm.

Also, as shown in FIG. 3, the second reflective layer 250 may include a gallium-based compound, for example, AlGaAs, and the second reflective layer 250 may be doped with a second conductivity type dopant. The second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr or Ba. Meanwhile, the first reflective layer 220 may be doped with a p-type dopant, and the second reflective layer 250 may be doped with an n-type dopant.

The second reflective layer 250 may also be a Distributed Bragg Reflector (DBR). For example, the second reflective layer 250 may have a structure in which a plurality of layers made of materials having different refractive indices are alternately stacked at least once or more.

Each layer of the second reflective layer 250 may include AlGaAs, and may be made of a semiconductor material having a composition formula of Al _x Ga _(1-x) As (0 <x <1). Here, as Al increases, the refractive index of each layer decreases, and when Ga increases, the refractive index of each layer may increase. In addition, the thickness of each layer of the second reflective layer 250 is λ / 4n, λ may be a wavelength of light emitted from the active layer, and n may be a refractive index of each layer for light having the above-described wavelength.

The second reflective layer 250 having such a structure may have a reflectivity of 99.9% with respect to light in a wavelength region of about 940 nanometers.

The second reflective layer 250 may be formed by alternately stacking layers, and the number of pairs of layers in the first reflective layer 220 may be greater than the number of pairs of layers in the second reflective layer 250. At this time, as described above, the reflectivity of the first reflective layer 220 is about 99.999%, which may be greater than the reflectance of the second reflective layer 250, 99.9%.

In an embodiment, the second reflective layer 250 is spaced apart from the active layer 232 than the first group second reflective layer 251 and the first group second reflective layer 251 disposed adjacent to the active layer 232. The second group second reflective layer 252 may be included.

As shown in FIG. 3, the first group second reflective layer 251 and the second group second reflective layer 252 may also be formed of single or multiple layers, respectively.

For example, the first group second reflective layer 251 may include about 1 to 5 pairs of the first group 2-1 layer 251a and the first group second-2 layer 251b. have. The first group 2-1 layer 251a may be formed thicker than the first group 2-2 layer 251b. For example, the first group 2-1 layer 251a may be formed of about 40-60 nm, and the first group second-2 layer 251b may be formed of about 20-30 nm.

In addition, the second group second reflective layer 252 may also include about 5 to 15 pairs of the second group 2-1 layer 252a and the second group second-2 layer 252b. The second group 2-1 layer 252a may be formed thicker than the second group 2-2 layer 252b. For example, the second group 2-1 layer 252a may be formed at about 40-60 nm, and the second group second-2 layer 252b may be formed at about 20-30 nm.

<Active layer>

3, the active layer 232 may be disposed between the first reflective layer 220 and the second reflective layer 250.

The active layer 232 may include any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure.

The active layer 232 may include a well layer 232a and a barrier layer 232b using a compound semiconductor material of a group III-V element. The well layer 232a may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer 232b. The active layer 232 may be formed of 1 to 3 pair structures such as InGaAs / AlxGaAs, AlGaInP / GaInP, AlGaAs / AlGaAs, AlGaAs / GaAs, GaAs / InGaAs, but is not limited thereto. A dopant may not be doped into the active layer 232.

<Cavity>

The embodiment may include at least one or more cavities 231 and 233 above or below the active layer 232. In an embodiment, the cavities 231 and 233 may be disposed in contact with the active layer 232, respectively, and the first cavity 231 and the active layer 232 disposed between the active layer 232 and the first reflective layer 220 ) And a second cavity 233 disposed between the second reflective layer 250 to allow laser light to be emitted from the active layer 232.

The first cavity 231 and the second cavity 233 may be formed of Al _y Ga _(1-y) As (0 <y <1) material, but are not limited thereto. For example, the first cavity 231 and the second cavity 233 may each include a plurality of layers of Al _y Ga _(1-y) As.

For example, the first cavity 231 may include a 1-1 cavity layer 231a and a 1-2 cavity layer 231b. The first-first cavity layer 231a may be spaced apart from the active layer 232 compared to the first-second cavity layer 231b. The 1-1 cavity layer 231a may be formed thicker than the 1-2 cavity layer 231b, but is not limited thereto.

In addition, the second cavity 233 may include a 2-1 cavity layer 233a and a 2-2 cavity layer 233b. The 2-2 cavity layer 233b may be spaced apart from the active layer 232 compared to the 2-1 cavity layer 233a. The 2-2 cavity layer 233b may be formed thicker than the 2-1 cavity layer 233a, but is not limited thereto. At this time, the 2-2 cavity layer 233b is formed to be about 60-70 nm, and the 1-1 cavity layer 231a can be formed to be about 40-55 nm, but is not limited thereto.

<Aperture region, AlGa-based transition layer and insulation region>

Referring back to FIG. 2, in an embodiment, the aperture region 240 may include a first insulating layer 242b and an aperture 241. The aperture region 240 may also be referred to as an opening region or an oxidation region.

The first insulating layer 242b may be formed of an insulating layer, for example, aluminum oxide, to act as a current blocking region, and the aperture 241, which is a light emitting region, may be defined by the first insulating layer 242b. .

For example, when the aperture region 240 includes aluminum gallium arsenide (AlGaAs), AlGaAs of the aperture region 240 reacts with H ₂ O to change the edge to aluminum oxide (Al ₂ O ₃ ). Accordingly, the first insulating layer 242b may be formed, and the central region not reacting with H ₂ O may be an aperture 241 made of AlGaAs.

According to an embodiment, light emitted from the active layer 232 through the aperture 241 may be emitted to the upper region, and the light transmittance of the aperture 241 may be excellent compared to the first insulating layer 242b. You can.

Referring to FIG. 3 again, the first insulating layer 242b may include a plurality of layers, for example, a 1-1 insulating layer 242b1 and a 1-2 insulating layer 242b2. have. The thickness of the first-first insulating layer 242b1 may be the same as or different from that of the first-second insulating layer 242b2.

On the other hand, one of the technical problems of the embodiment is to provide a surface light emitting laser element and a light emitting device including the same, which can solve the problem of increasing the divergence angle of the beam.

In addition, one of the technical problems in the embodiment is to provide a surface light emitting laser element capable of preventing a current crowding phenomenon in an aperture edge and a light emitting device including the same.

Hereinafter, technical features of the implementation for solving the above technical problem will be described in detail with reference to FIGS. 4A to 10.

First, FIG. 4A is a first enlarged view of a second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 2.

Referring to FIG. 4A, the embodiment is disposed on the active layer 232, and the AlGa series transition layer 242 in which the Al composition is graded and the second disposed between the active layer 232 and the second reflective layer 250 Including the insulating layer 242e has a technical effect that can solve the problem of increasing the divergence angle of the beam (divergence angle of beams).

In addition, the embodiment improves reliability by improving crystal quality at the aperture edge by including the AlGa-based transition layer 242 and the second insulating layer 242e where the Al composition is graded, thereby uniform light output in the entire aperture region. It is possible to provide a surface light emitting laser element capable of emitting light and a light emitting device including the same.

Specifically, referring to FIG. 4A, the second insulating layer 242e extends from the end of the first insulating layer 242b toward the aperture 241 and is disposed on the first insulating layer 242b. Can be. In an embodiment, the second insulating layer 242e may be an insulating layer in which a part of the AlGa-based transition layer 242 is oxidized.

In this case, the AlGa-based transition layer 242 may include a first AlGa-based transition layer 242a1 disposed above the first insulating layer 242b. In addition, the AlGa-based transition layer 242 may include a second AlGa-based transition layer 242a2 disposed under the first insulating layer 242b.

In addition, in the embodiment, the second insulating layer 242e may include a 2-1 insulating layer 242e1 disposed above the first insulating layer 242b. The 2-1 insulating layer 242e1 may be an insulating layer in which a portion of the first AlGa-based transition layer 242a1 is oxidized.

In addition, the second insulating layer 242e may further include a second-2 insulating layer 242e2 disposed under the first insulating layer 242b. The 2-2 insulating layer 242e2 may be an insulating layer in which a portion of the second AlGa-based transition layer 242a2 is oxidized.

In addition, in the embodiment, the second reflective layer 250 may include a third insulating layer 243 disposed at a predetermined distance inward from the outer side of the second reflective layer 250. The third insulating layer 243 is the second reflective layer 250 of the first part of the second part of the second layer 251b and the second group of the second part of the second layer 252b is oxidized insulation It can be a layer.

4B is an enlarged photograph of the third area A3 of the second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 4A, wherein the second insulating layer 242e is the first insulation It may include a 2-1 insulating layer 242e1 disposed above the layer 242b and a 2-2 insulating layer 242e2 disposed below the first insulating layer 242b. In addition, the second reflective layer 250 may include a third insulating layer 243 disposed at a predetermined distance inward from the outer side of the second reflective layer 250.

Referring to FIG. 4A again, in the embodiment, before and after the first insulating layer 242b, which is an oxide layer, the second AlGa-based transition layer 242a2 and the first AlGa-based transition layer 242a1 are formed. 4B, a part of the second AlGa-based transition layer 242a2 and the second AlGa-based transition layer 242a2 is oxidized before and after the high Al oxidation layer from the MESA etching interface. layer), a 2-2 insulating layer 242e2 and a 2-1 insulating layer 242e1 may be formed.

On the other hand, Figure 5 is a partially enlarged view of the surface light emitting laser device according to the background technology.

According to the background art, in the case of DBR layers 51 and 52 having a high Al composition of 88% or more among p-DBR, which is the second reflective layer 50, as shown in FIG. 5, the mesa (MESA) etching interface of the second reflective layer 50 A part of the outer insulating layer 43 is oxidized, and the outer insulating layer 43 has a defect (DL) due to a thickness of 50 nm or more and stress due to oxidation.

These defects (DL) affect the oxidation layer (oxidation layer) (42b) defining the aperture (41) may cause a crack (crack) due to the oxidation (oxidation layer damage) of the oxide layer.

In particular, in order to decrease the beam divergence, the oxidation layer 42b must be formed thinner. The thinner the oxide layer 42b, the greater the damage caused by the defect (DL) can be. There is a technical contradiction.

Accordingly, in the background art, the oxide layer 42b is thickly formed, and in this case, an abrupt interface (AI) is provided in the boundary region with the aperture 41, and the abrupt oxidation layer interface AI designates the divergence angle. There is a problem of increasing coverage.

For example, FIGS. 6A and 6B are a near field image and a far field spectrum of a surface light emitting laser device according to the background technology.

Referring to FIG. 6A, as the defects (DLs) damage the oxidation layer 42b, the crystal quality of the oxide layer 42b defining the aperture 41 by the current confinement decreases, thereby improving electrical reliability. There is a problem that a higher order mode is further caused when a high current is applied.

Also, referring to FIG. 6B, as the oxide layer 42b has an abrupt interface (AI) in the background, there is a problem in that the divergence angle of the beams increases to about 29 degrees.

Meanwhile, FIGS. 7A and 7B are a near field image and a far field spectrum of the surface light emitting laser device according to the embodiment.

7A and 4A, a second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 on the first insulating layer 242b. As disposed, the defects (DLs) are prevented from expanding to the first insulating layer 242b, which is an oxide layer defining the aperture 241 by current confinement, so that the first insulating layer 242b is protected to protect the first insulating layer. The crystal quality of the layer 242b can be maintained or improved compared to the conventional one, thereby improving electrical reliability, and accordingly, acceleration to a higher mode may be prevented even when a high current is applied.

Referring also to FIGS. 7A and 4A, a second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 on the first insulating layer 242b. According to the degree of oxygen supply when the oxidation process proceeds by supplying oxygen from the mesa (MESA) etching interface to the inside as it is disposed on, the thickness of the first insulating layer inside may be formed to be thinner. The interface of the first insulating layer 242b at the boundary between the 242b and the aperture 241 may implement a sharp state. The embodiment can prevent the divergence angle from being increased by the stiff interface SI of the first insulating layer 242b. For example, referring to FIG. 7A, as the first insulating layer 242b has a sloping interface SI, a divergence angle of beams may be controlled to about 21 degrees.

7B, the second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 and is disposed on the first insulating layer 242b. Accordingly, it is possible to maintain or improve the crystal quality of the first insulating layer 242b, and in particular, to maintain or improve the crystal quality of the aperture 241, as well as the entire aperture including the center as well as the aperture edge than before. It is possible to provide a surface light emitting laser element capable of uniform light output in a region and a light emitting device including the same.

FIG. 8 is an enlarged exemplary composition of the fourth area A4 of the surface light emitting laser device according to the embodiment shown in FIG. 4A, and FIG. 9 is a surface light emitting laser device according to the embodiment shown in FIG. 2. It is the 2nd enlarged view A22 with respect to the 2nd area A2.

In an embodiment, the second insulating layer 242e extends a certain distance from the end of the first insulating layer 242b in the direction of the aperture 241, and thus is disposed on the first insulating layer 242b. The problem that the divergence angle of the beam is increased at the aperture edge can be solved, and the reliability is improved by improving the crystal quality of the first insulating layer 242b and the aperture 241 at the aperture edge, thereby improving uniformity in the entire aperture region. There is a complex technical effect that can produce one light output.

In an embodiment, the length of the second insulating layer 242e may be controlled according to the Al composition of the AlGa-based transition layer 242. The AlGa-based transition layer 242 may have an Al _x Ga _1-x As composition.

First, referring to FIG. 8, the composition of Al in the first AlGa-based transition layer 242a1 may be graded in the range of 0.01 to 0.99. For example, the composition of Al in the first AlGa-based transition layer 242a1 may be graded in a first range (12% to 80%) of 0.12 to 0.80. For example, the composition of Al in the first AlGa-based transition layer 242a1 may be reduced in the first range of 0.80 to 0.12 in the direction of the first group 2-1 layer 251a in the active layer 232.

 In addition, the composition of Al in the second AlGa-based transition layer 242a2 may be graded in the range of 0.01 to 0.99. For example, the composition of Al in the second AlGa-based transition layer 242a2 may be graded in a second range of 0.30 to 0.65. For example, the composition of Al in the second AlGa-based transition layer 242a2 may be graded in the second range of 0.30 to 0.65 in the direction of the first group 2-1 layer 251a in the active layer 232.

Accordingly, in the embodiment, the second composition range graded in the second AlGa series transition layer 242a2 may be within the first composition range of Al graded in the first AlGa series transition layer 242a1.

In an embodiment, the composition of Al in the aperture 241 region may be about 0.99, but is not limited thereto, and the composition of Al in the first group 2-1 layer 251a may be 0.12, but is not limited thereto. no.

Accordingly, referring to FIG. 9, the 2-1 length L21 of the 2-1 insulating layer 242e1 may be controlled to be shorter than the first length L1 of the first insulating layer 242b. The 2-2 length L22 of the 2-2 insulating layer 242e2 may be controlled to be shorter than the 2-1 length L21 of the 2-1 insulating layer 242e1.

In addition, the 2-1 length L21 of the 2-1 insulating layer 242e1 may be controlled to be less than or equal to the remaining length L1r in addition to the first length L1 of the first insulating layer 242b.

For example, the 2-1 length L21 of the 2-1 insulating layer 242e1 is 0.1 to 1 times the remaining length L1r in addition to the first length L1 of the first insulating layer 242b. It can be controlled in the ship range.

In addition, the 2-1 length L21 of the 2-1 insulating layer 242e1 may be longer than the third length L3 of the third insulating layer 243. For example, the second lengths L21 and L22 of the second insulating layer 242e are greater than the third length L3 of the third insulating layer 243 but may be 5 times or less.

The 2-1 length L21 of the 2-1 insulating layer 242e1 may be 0.5 to 10 μm, but is not limited thereto.

Accordingly, in the embodiment, the 2-1 insulating layer 242e1 extends a length of 2-1 in the direction of the aperture 241 from the end of the first insulating layer 242b to the first insulating layer ( As it is disposed on 242b), the defect DL is effectively blocked to improve reliability by improving the crystal quality of the first insulating layer 242b and the aperture 241 at the aperture edge, thereby improving uniformity in the entire aperture region. One light output can be produced, and the divergence angle of the beam at the aperture edge is controlled by controlling the first insulating layer 242b at the interface between the first insulating layer 242b and the aperture 241 as a sharp interface SI. The increasing problem can be solved.

In an embodiment, when the 2-1 length L21 of the 2-1 insulating layer 242e1 is longer than the remaining length L1r of the first insulating layer 242b, the beam divergence may increase, If the 2-1 length L21 of the 2-1 insulating layer 242e1 is shorter than the third length L3 of the third insulating layer 243, the protection function from the defect DL may be weakened.

Next, FIG. 10 is a third enlarged view A23 of the second area A2 of the surface light emitting laser device according to the embodiment shown in FIG. 2.

In an embodiment, the 2-1 thickness T21 of the 2-1 insulating layer 242e1 may be thinner than the first thickness T1 of the first insulating layer 242b. The second-second thickness T22 of the second-second insulating layer 242e2 may be thinner than the first thickness T1 of the first insulating layer 242b. The first thickness T1 of the first insulating layer 242b may be about 5 to 50 nm, but is not limited thereto.

In addition, the first thickness T1 of the first insulating layer 242b may be thinner than the third thickness T3 of the third insulating layer 243.

In an exemplary embodiment, the first insulating layer 242b is positioned at a node position NP of a laser oscillated from the active layer 232, and thus has a technical effect of reducing a beam divergence.

In addition, the second insulating layer 242e is positioned at the node position of the laser oscillating from the active layer 232, and thus has a technical effect of reducing beam divergence.

In addition, in the embodiment, when the 2-2 thickness T22 of the 2-2 insulating layer 242e2 is thicker than the 2-1 thickness T21 of the 2-1 insulating layer 242e1, the insulating region 242 ) Is close to the optical NP (node position), there is a technical effect to reduce the beam divergence (beam divergence).

In addition, when the 2-1 thickness T21 of the 2-1 insulating layer 242e1 is thicker than the 2-2 thickness T22 of the 2-2 insulating layer 242e2, it is first from the defect DL. The effect of protecting the insulating layer 242b can be enhanced.

Accordingly, the 2-1 thickness T21 of the 2-1 insulation layer 242e1 may be controlled to 0.2 to 3 times the 2-2 thickness T22 of the 2-2 insulation layer 242e2.

The thickness of the second insulating layer 242e may range from 1 to 150 nm, but is not limited thereto.

In practice, the first insulating layer 242b or the second insulating layer 242e may be located between about 100 to 250 nm from the top of the active layer 232.

<Electrode, passivation layer>

Referring to FIG. 2 again, the second contact electrode 255 may be disposed on the second reflective layer 250. In the region between the second contact electrodes 255, the second reflective layer 250 is exposed. It may correspond to the aperture 241 which is the central region of the aperture region 240 described above. The contact electrode 255 may improve contact characteristics between the second reflective layer 250 and the second electrode 255 described below.

Next, the passivation layer 270 disposed on the contact electrode 255 may have a thickness on the top surface of the light emitting structure that is thinner than the second contact electrode 255, where the second contact electrode 255 is the passivation layer. (270) may be exposed to the top.

The passivation layer 270 may include at least one of polymide, silica (SiO ₂ ), or silicon nitride (Si ₃ N ₄ ).

Next, a second electrode 280 that is in electrical contact with the exposed second contact electrode 255 may be disposed. The second electrode 280 is disposed to extend above the passivation layer 270 and is disposed from the outside. Current can be supplied.

The second electrode 255 may be made of a conductive material, for example, metal. For example, the second electrode 255 includes at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It can be formed of.

The above-described semiconductor device may be a laser diode, and the interior of the two reflective layers may act as a resonator. At this time, electrons and holes are supplied from the first reflective layer 220 of the first conductivity type and the second reflective layer 250 of the second conductivity type to the active layer, and the light emitted from the active layer 232 is reflected inside the resonator and amplified When the threshold current is reached, it may be discharged to the outside through the aperture 241 described above.

The light emitted from the semiconductor device according to the embodiment may be single-wavelength and single-phase light, and a single wavelength region may vary according to the composition of the first reflective layer 220, the second reflective layer 250, and the active layer 232. .

The embodiment can provide a surface light emitting laser element and a light emitting device including the same, which can solve the problem of increasing the beam divergence angle at the aperture edge.

For example, as the second insulating layer 242e extends in the direction of the aperture 241 from the end of the first insulating layer 242b, the first insulating layer 242b is disposed on the first insulating layer 242b. The interface of the first insulating layer 242b at the boundary between the layer 242b and the aperture 241 may implement a sharp state, and the divergence angle may be prevented from increasing due to the sharp interface SI.

In addition, the embodiment may provide a surface light emitting laser element and a light emitting device including the same, which improves reliability by improving crystal quality at the aperture edge, and can produce uniform light output in the entire aperture region.

Also, for example, as the second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 and is disposed on the first insulating layer 242b, 1 Since the crystal quality of the insulating layer 242b can be maintained or improved, and the crystal quality of the aperture 241 can also be maintained or improved, it is more uniform than the aperture edge as well as the entire area including the center than the conventional one. It is possible to provide a surface light emitting laser element capable of generating one light output and a light emitting device including the same.

In addition, the embodiment can solve the problem of increasing the divergence angle of the beam by preventing high-mode oscillation by preventing current crowding at the aperture edge. It is possible to provide a surface light emitting laser element and a light emitting device including the same.

For example, as the second insulating layer 242e extends from the end of the first insulating layer 242b in the direction of the aperture 241 and is disposed on the first insulating layer 242b, the defect Determination of the first insulating layer 242b by blocking the expansion of the (DL) to the first insulating layer 242b, which is an oxide layer defining the aperture 241 by current confinement, thereby protecting the first insulating layer 242b. The quality can be maintained or improved than the existing one, thereby improving electrical reliability, and accordingly, acceleration in a higher mode can be prevented even when a high current is applied.

In an embodiment, the second insulating layer 242e extends a certain distance from the end of the first insulating layer 242b in the direction of the aperture 241, and thus is disposed on the first insulating layer 242b. The problem that the divergence angle of the beam is increased at the aperture edge can be solved, and the reliability is improved by improving the crystal quality of the first insulating layer 242b and the aperture 241 at the aperture edge, thereby improving uniformity in the entire aperture region. There is a complex technical effect that can produce one light output.

<Package>

Next, FIG. 11 is a surface light emitting laser package to which a surface light emitting laser device according to an embodiment is applied.

Referring to FIG. 11, the surface light emitting laser package 100 according to the embodiment may include a housing 110, a surface emitting laser device 201, and a diffusion unit 140. For example, the surface emitting laser package 100 according to the embodiment includes a housing 110 having a cavity C, a surface emitting laser element 201 and the housing 110 disposed in the cavity C. It may include a diffusion unit 140 disposed on.

The surface light emitting laser device 201 may be a surface light emitting laser device 200 according to the above-described embodiment.

The housing 110 of the embodiment may include a single body or a plurality of bodies. For example, the housing 110 may include a first body 110a, a second body 110b, and a third body 110c. The second body 110b may be disposed on the first body 110a, and the third body 110c may be disposed on the second body 110b.

Next, the embodiment may include a first electrode portion 181 and a second electrode portion 182. The first electrode part 181 and the second electrode part 182 may be disposed on the housing 110. Specifically, the first electrode part 181 and the second electrode part 182 may be disposed to be spaced apart from each other on the upper surface of the first body 110a. The surface emitting laser device 201 may be electrically connected to the second electrode unit 182 by a predetermined wire 187.

In addition, the embodiment may include a third electrode part 183 and a fourth electrode part 184 that are spaced apart from the lower side of the first body 110a, and also penetrate through the first body 110a. A fifth electrode part 185 and a sixth electrode part 186 may be included.

In an embodiment, the housing 110 may include a seating portion 110bt on which the diffusion portion 140 is disposed. For example, a portion of the upper surface of the second body 110b may function as a seating portion 110bt. The embodiment may include an adhesive member 155 disposed between the seating portion 110bt of the housing 110 and the diffusion portion 140.

Next, in the embodiment, the diffusion unit 140 may include a glass layer 141 having a first thickness and a polymer layer 145 having a second thickness and disposed on the glass layer 141. In FIG. 11, the polymer layer 145 is illustrated as being disposed under the glass layer 141, but in the manufacturing process, the polymer layer 145 may be disposed on the upper side of the glass layer 141 in a printing process. The polymer layer 145 may include a pattern including a curved surface, and the pattern may be regular or irregular. In addition, the pattern may not be present at a portion where the adhesive member 155 contacts, and may be formed on a relatively flat surface than the pattern.

(Flip chip type surface emitting laser device)

Next, FIG. 12 is another cross-sectional view of the surface emitting laser device according to the embodiment.

The surface emitting laser device according to the embodiment may be applied to the flip chip type surface emitting laser device shown in FIG. 12.

In addition to the vertical type, the surface emitting laser device according to the embodiment may have a flip chip type in which the first electrode 215 and the second electrode 282 face the same direction as shown in FIG. 12.

For example, the flip-chip surface emitting laser device illustrated in FIG. 12 includes first electrode units 215 and 217, a substrate 210, a first reflective layer 220, an active layer 232, and an aperture region 240, The second reflective layer 250, the second electrode units 280 and 282, the first passivation layer 271, the second passivation layer 272, and any one of the non-reflective layer 290 may be included. In this case, the reflectivity of the second reflective layer 250 may be designed to be higher than that of the first reflective layer 220.

In addition, the flip-chip surface light emitting laser device is disposed between the active layer 232 and the second reflective layer 250, the Al composition of the AlGa series transition layer (not shown) and the active layer 232 and the second A second insulating layer 242e disposed between the reflective layers 250 may be included.

At this time, the first electrode units 215 and 217 may include a first electrode 215 and a first pad electrode 217, and the first electrode on the first reflective layer 220 exposed through a predetermined mesa process. 215 is electrically connected, and the first pad electrode 217 may be electrically connected to the first electrode 215.

The first electrode portions 215 and 217 may be made of a conductive material, for example, metal. For example, the first electrode 215 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au), or a single-layer or multi-layer structure. It can be formed of. The first electrode 215 and the first pad electrode 217 may include the same metal or different metals from each other.

When the first reflective layer 220 is an n-type reflective layer, the first electrode 215 may be an electrode for the n-type reflective layer.

The second electrode parts 280 and 282 may include a second electrode 282 and a second pad electrode 280, and the second electrode 282 is electrically connected to the second reflective layer 250, The second pad electrode 280 may be electrically connected to the second electrode 282.

When the second reflective layer 250 is a p-type reflective layer, the second electrode 282 may be a p-type electrode.

The second electrode according to the above-described embodiment may be equally applied to the second electrode 282 of the flip-chip type surface emitting laser device.

The first insulating layer 271 and the second insulating layer 272 may be made of an insulating material, for example, may be made of nitride or oxide, for example, polyimide (Polymide), silica (SiO ₂ ), Alternatively, at least one of silicon nitride (Si ₃ N ₄ ) may be included.

(Mobile terminal)

Next, FIG. 13 is a perspective view of a mobile terminal to which a surface light emitting laser element according to an embodiment is applied.

13, the mobile terminal 1500 of the embodiment may include a camera module 1520, a flash module 1530, and an auto focus device 1510 provided on the rear side. Here, the autofocus device 1510 may include one of the packages of the surface light emitting laser device according to the above-described embodiment as a light emitting unit.

The flash module 1530 may include a light emitting device that emits light therein. The flash module 1530 may be operated by camera operation of a mobile terminal or user control.

The camera module 1520 may include an image capturing function and an auto focus function. For example, the camera module 1520 may include an auto focus function using an image.

The autofocus device 1510 may include an autofocus function using a laser. The autofocus device 1510 may be mainly used in a condition in which an autofocus function using an image of the camera module 1520 is deteriorated, for example, in a proximity or dark environment of 10 m or less. The autofocus device 1510 may include a light emitting unit including a vertical cavity surface emitting laser (VCSEL) semiconductor element, and a light receiving unit converting light energy such as a photodiode into electrical energy.

Features, structures, and effects described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, and the like exemplified in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the embodiments have been mainly described above, these are merely examples and do not limit the embodiments, and those skilled in the art to which the embodiments belong may not be exemplified in the above without departing from the essential characteristics of the embodiments. You will see that it is possible to modify and apply branches. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of embodiments set forth in the appended claims.

Claims (17)

Board;
A first reflective layer disposed on the substrate;
An active layer disposed on the first reflective layer;
A second reflective layer disposed on the active layer and including an aperture region, wherein the aperture region includes a first insulating layer and a second insulating layer disposed on the first insulating layer,
The length of the first insulating layer is a surface light emitting laser device longer than the length of the second insulating layer. According to claim 1,
The length of the first insulating layer is a surface light emitting laser device in the range of 1.1 times to 2.0 times the length of the second insulating layer. According to claim 1,
Further comprising a third insulating layer disposed a predetermined distance inward from the outer side of the second reflective layer,
The length of the second insulating layer is longer than the length of the third insulating layer, the surface light emitting laser device shorter than the length of the first insulating layer. According to claim 1,
The thickness of the second insulating layer is less than the thickness of the first insulating layer surface light emitting laser device. According to claim 1,
It is disposed between the active layer and the second reflective layer, and further comprises an AlGa-based transition layer that is graded Al composition,
The AlGa-based transition layer includes a first AlGa-based transition layer disposed in an upper first region of the first insulating layer and a second AlGa-based transition layer disposed under the first insulating layer,
The composition of Al in the first AlGa-based transition layer is graded in a first range of 0.12 to 0.80,
A surface light emitting laser device in which the composition of Al is graded in a second range of 0.30 to 0.65 in the second AlGa-based transition layer. A first reflective layer;
An active layer on the first reflective layer;
An aperture region having a first insulating layer and an aperture and disposed on the active layer;
A second reflective layer on the aperture region;
An AlGa-based transition layer disposed between the active layer and the second reflective layer, the Al composition being graded; And
Including; a second insulating layer disposed between the active layer and the second reflective layer,
The second insulating layer extends from the end of the first insulating layer in the aperture direction and is disposed on the first insulating layer,
The second insulating layer includes a second-1 insulating layer disposed in a second region above the first insulating layer,
The 2-1 length of the 2-1 insulating layer is shorter than the first length of the first insulating layer surface light emitting laser device. The method of claim 6,
The second insulating layer is a surface light emitting laser device in which a part of the AlGa-based transition layer is an oxidized insulating layer. The method of claim 6,
The AlGa-based transition layer is a surface light emitting laser device including a first AlGa-based transition layer disposed in the first region above the first insulating layer. The method of claim 8,
The AlGa-based transition layer further includes a second AlGa-based transition layer disposed below the first insulating layer,
The second insulating layer further includes a second-2 insulating layer disposed below the first insulating layer. The method of claim 9,
The 2-2 length of the 2-2 insulating layer is shorter than the 2-1 length of the 2-1 insulating layer. The method of claim 10,
The second reflective layer
And a third insulating layer disposed a predetermined distance inward from the outer side of the second reflective layer,
The second length of the second insulating layer is longer than the third length of the third insulating layer surface light emitting laser device. The method of claim 11,
The 2-1 thickness of the 2-1 insulating layer is thinner than the first thickness of the first insulating layer surface light emitting laser device. The method of claim 12,
The composition of Al in the first AlGa-based transition layer is graded in a first range of 0.12 to 0.80,
A surface light emitting laser device in which the composition of Al is graded in a second range of 0.30 to 0.65 in the second AlGa-based transition layer. The method of claim 13,
The second composition range that is graded in the second AlGa-based transition layer is a surface light emitting laser device within the first composition range of Al that is graded in the first AlGa-based transition layer. The method according to any one of claims 1 to 14,
The first insulating layer is a surface light emitting laser device positioned at a node position of a laser oscillated from the active layer. The method according to any one of claims 1 to 14,
The second insulating layer is a surface light emitting laser device positioned at the node position of the laser oscillated from the active layer. A light emitting device comprising any one of claims 1 to 14, a surface light emitting laser element.

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