KR20190114642A - Single crystal growth device and single crystal growth method of using the same - Google Patents

Abstract

The purpose of the present invention is to provide a single crystal growing device which increases efficiency and convenience of a silicon carbide single crystal growing process by observing microcrystal growth patterns of a seed crystal within a crucible and effectively blocking heat emission; and a single crystal growing method using the same. According to an embodiment of the present invention, the single crystal growing device using a solution method includes: a chamber; the crucible disposed inside the chamber; a blocking member including a first blocking member which is disposed at an upper portion of the crucible and a second blocking member which is disposed in parallel with the first blocking member at an upper side of the first blocking member; a pulling shaft passing through the blocking member; and a moving unit having one end coupled to the blocking member and the other end brought into contact with the chamber, and rotationally moved around the pulling shaft with the blocking member, wherein the first blocking member has a first opening unit formed therein, the second blocking member has a second opening unit formed therein, and reciprocal disposition of the first opening unit and the second opening unit is changed by rotational movement of at least one of the first blocking member and the second blocking member.

Description

SINGLE CRYSTAL GROWTH DEVICE AND SINGLE CRYSTAL GROWTH METHOD OF USING THE SAME}

The present invention relates to a single crystal growth apparatus and a single crystal growth method using the same.

Silicon carbide (SiC) single crystal is widely used as a component material for semiconductor, electronics, automobiles, and mechanical fields because of its excellent mechanical strength, heat resistance, and corrosion resistance.

Silicon carbide single crystal growth methods include the Acheson method of reacting carbon and silica in a high temperature electric furnace of more than 2000 degrees Celsius, the chemical vapor deposition method, the sublimation method of growing a single crystal by sublimation at a high temperature of 2000 degrees Celsius using silicon carbide as a raw material. And a solution method using a crystal pulling method.

However, the Acheson method is very difficult to obtain a high purity silicon carbide single crystal, and the chemical vapor deposition method has a problem that the thickness is limited to the thin film level. The sublimation method is also generally performed at a high temperature of more than 2400 degrees Celsius, and there are limitations in terms of production cost due to the possibility of various defects such as micro pipes and lamination defects. As a solution method without the above limitations, silicon carbide There is a continuous study of solution methods.

The silicon carbide solution method is a method of extracting a solid phase single crystal from a liquid raw material containing silicon and carbon contained in a crucible. The temperature control in the solution method not only influences the precipitation driving force of the single crystal, but also affects the concentration of raw materials in the solution and the circulation of the solution. Temperature control of the solution in the crucible is an important factor affecting the single crystal growth.

In particular, the solution method is more sensitive to temperature conditions due to the limited solubility of carbon due to the nature of the use of liquid metal, and in fact, the precipitation and growth patterns change rapidly with a slight temperature change when silicon carbide single crystals are precipitated and grown. As a result, process errors may occur.

It is necessary to reduce the temperature variation of the solution in the crucible to prevent unnecessary precipitation in the crucible, but if the open holes on the upper side of the crucible are closed to block heat dissipation, the growth process of silicon carbide cannot be observed. The problem arises.

As described above, in the case of the conventional solution method, there is a limitation in the process of blocking heat dissipation, and thus, it is necessary to develop a technology capable of effectively blocking heat dissipation.

Embodiments of the present invention have been proposed to solve the above problems of the conventionally proposed methods, and by observing the microcrystalline growth behavior of the crucible internal seed crystals and effectively blocking the heat dissipation, the efficiency of the silicon carbide single crystal growth process It is an object of the present invention to provide a single crystal growing apparatus and a single crystal growing method using the same, which improves convenience.

However, the problem to be solved by the embodiments of the present invention is not limited to the above-described problem can be variously extended within the scope of the technical idea included in the present invention.

A single crystal growth apparatus according to an embodiment of the present invention, a single crystal growth apparatus using a solution method, the chamber; A crucible disposed inside the chamber; A barrier member including a first barrier member disposed above the crucible, and a second barrier member disposed above the first barrier member in parallel with the first barrier member; A pulling shaft passing through the barrier member; And a moving part having one end coupled to the diaphragm member and the other end contacting the chamber, the moving part rotating along with the diaphragm member about the pulled shaft, wherein a first opening is formed in the first diaphragm member. And a second opening is formed in the second barrier member, and the arrangement of the first opening portion and the second opening portion by a rotational movement of at least one of the first barrier member and the second barrier member is performed. Can change.

The barrier member may be a heat insulating member.

The first opening and the second opening may have different shapes.

The first barrier member and the second barrier member may each independently move.

The chamber may further include a guide part having a groove shape disposed along a moving path of the moving part at a portion in contact with the moving part.

The guide part may be disposed on one or more of the top, bottom, and side surfaces of the chamber.

A plurality of moving parts may be coupled to the barrier member.

It may further include a heat insulating part disposed on the outer circumferential surface of the crucible.

The outer surface of the heat insulating part may be combined with one end of the moving part.

The heating unit may further include a heat generating unit disposed outside the heat insulating unit.

Single crystal growth method using a single crystal growth apparatus according to an embodiment of the present invention, the seed crystal provided at the bottom of the pulled shaft to move to the solution in the crucible to grow a single crystal; And a diaphragm member including a first diaphragm member and a second diaphragm member disposed above the crucible, respectively, to open and close an observation window by moving positions of openings having different shapes provided in the diaphragm members, respectively. Adjusting the.

According to the embodiments of the present invention, the growth process of the silicon carbide is observed through the observation window of the barrier member, and the opening and closing of the observation window can be controlled to effectively block the heat dissipated through the observation window, thereby increasing the efficiency of the single crystal growth process. And convenience can be increased.

1 is a view showing a single crystal growth apparatus according to an embodiment of the present invention.
2 is a block diagram showing the configuration of the barrier member in the single crystal growth apparatus according to an embodiment of the present invention.
3 is a view showing a first barrier member and a second barrier member in the single crystal growth apparatus according to the embodiment of the present invention.
4 is a view showing a rotation direction of the barrier member in the single crystal growth apparatus according to the embodiment of the present invention.
FIG. 5 is a view showing an observation window opened in the single crystal growth apparatus according to the embodiment of the present invention.
6 is a view showing a state in which the observation window is closed in the single crystal growth apparatus according to an embodiment of the present invention.
7 is a flow chart of a single crystal growth method using a single crystal growth apparatus according to an embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In order to clearly describe the present invention, parts irrelevant to the description are omitted, and like reference numerals designate like elements throughout the specification.

In addition, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to the illustrated. In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

In addition, when a part of a layer, film, region, plate, etc. is said to be "on" or "on" another part, it includes not only when the other part is "right on" but also another part in the middle. . On the contrary, when a part is "just above" another part, there is no other part in the middle. In addition, to be referred to as "on" or "on" the reference part is to be located above or below the reference part, and to mean "to" or "on" necessarily toward the opposite direction of gravity. no.

In addition, throughout the specification, when a part is said to "include" a certain component, it means that it may further include other components, without excluding the other components unless otherwise stated.

1 is a view showing a single crystal growth apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the single crystal growth apparatus 10 according to the exemplary embodiment of the present invention is a single crystal growth apparatus using a solution method, and includes a chamber 100, a crucible 200 disposed inside the chamber 100, The barrier member 300 having the opening 330, the pulling shaft 400 penetrating the barrier member 300, and one end thereof are combined with the barrier member 300, and the other end thereof is in contact with the chamber 100. The moving shaft 500 rotates together with the barrier member 300 about the pull shaft 400. The barrier member 300 is disposed in parallel with the first barrier member 310 disposed above the first barrier member 310 and the first barrier member 310 disposed above the crucible 200. And a second barrier member 320 to be formed. An opening 330 is formed in each of the first barrier member 310 and the second barrier member 320. The opening 330 formed in the first barrier member 310 may be a first opening, and the opening 330 formed in the second barrier member 320 may be a second opening. Rotational movement of at least one of the first barrier member 310 and the second barrier member 320 changes the mutual arrangement of the first and second openings, thereby resulting from overlapping the openings 330. Opening and closing of the observation window can be adjusted.

First, the crucible 200 may be disposed in the chamber 100, and may have a container shape having an open upper side. However, the present invention is not limited thereto and may be in any form for forming silicon carbide single crystal. The crucible 200 may be charged with a molten raw material injected into the growth of silicon carbide.

When the crucible 200 is heated, the solution 110 contained in the crucible 200 is changed into a solution 110 containing carbon (C) and silicon (Si), and the crucible 200 is heated to continue the solution. When 110 is in a supersaturation state, silicon carbide single crystals may be grown on seed crystals 410 in contact with the solution 110.

The barrier member 300 is disposed above the crucible 200 and may include one or more openings 330. The barrier member 300 according to an embodiment of the present invention serves to block heat dissipated to the upper side of the crucible 200, and at the same time, to observe the growth process of silicon carbide through the opening 330. Play a role. The barrier member 300 will be described in detail with reference to FIGS. 2 to 4.

Next, the pulling shaft 400 serves to inject the seed crystal 410 into the solution 110 contained in the crucible 200. The silicon carbide seed crystal 410 may be connected to an end of the pulling shaft 400, and the seed crystal 410 may be moved into the crucible 200 through the vertical movement of the pulling shaft 400.

The moving unit 500 is coupled to the barrier member 300 to serve to rotate the barrier member 300 and at the same time, the barrier member 300 is rotated when the barrier member 300 is rotated. To play a supporting role.

The moving part 500 according to an embodiment may include a first contact part contacting the barrier member 300, a second contact part contacting the chamber 100, and a support part connecting and supporting the first contact part and the second contact part. It may be configured as, but the configuration of the moving unit 500 is not limited only to the configuration described above.

As shown in FIG. 1, two moving parts 500 may be coupled to one barrier member 300, but the number and shape of the barrier members 300 are not limited thereto. One or more moving parts 500 may be coupled to each other.

The guide part 510 is a moving path of the moving part 500 and serves to guide the moving part 500. The guide part 510 may be disposed along a moving path of the moving part 500 in a portion of the chamber 100 that is in contact with the moving part 500. In some embodiments, the guide part 510 may be a moving part 500. ) May be in the form of a recessed groove so as to rotate in a fitted state.

In FIG. 1, the guide part 510 is disposed along the side of the chamber 100, according to an embodiment, but the arrangement of the guide part 510 is not limited to only the side of the chamber 100. Accordingly, the guide part 510 may be disposed on one or more of the top, bottom, and side surfaces of the chamber 100.

The heat insulation part 600 may be disposed on an outer circumferential surface of the crucible 200 and serves to block heat emitted from the crucible 200. That is, the heat insulation part 600 may function to maintain the temperature inside the crucible 200 at the single crystal growth temperature.

Since silicon carbide single crystal growth requires a high temperature state, according to an embodiment, graphite felt manufactured by compressing graphite fibers to a predetermined thickness or more may be used as the heat insulating part 600. In addition, the heat insulating part 600 may be formed in a plurality of layers to surround the crucible 200, but the shape of the heat insulating part 600 is not limited thereto.

Although the moving part 500 is mainly coupled to the barrier member 300 to rotate the barrier member 300, according to another exemplary embodiment, the moving part 500 rotates the heat insulating part 600. You can also do In this case, one end of the moving part 500 may be coupled to an outer surface of the heat insulating part 600.

As described above with reference to FIG. 1, the moving part 500 may be coupled to the barrier member 300. Hereinafter, an exemplary embodiment in which the moving part 500 and the heat insulation part 600 are combined will be described. The coupling of the moving part 500 and the barrier member 300 may be the same coupling method as that of the moving part 500 and the heat insulating part 600 which will be described below.

First, as a coupling method according to an embodiment, the coupling of one end of the moving part 500 and the outer surface of the heat insulating part 600 may be a method using a bolt. In connection with the coupling of the heat insulating part 600 and the moving part 500, a fastening part (not shown) may be formed at a part of the heat insulating part 600 which contacts one end of the moving part 500, and the moving part 500 One end of the) may be formed with a bolt (not shown) coupled with the fastening portion (not shown). The fastening part (not shown) is a part fastened with a bolt (not shown), and may have a hole shape having a screw line. The bolt (not shown) is a ceramic material having high temperature durability, a graphite material may be used, and the fastening part (not shown) may be the same material as the heat insulating part 600.

According to another embodiment, the coupling of the moving part 500 and the heat insulating part 600 may include a protrusion provided at one end of the moving part 500 in a groove (not shown) provided in the outer wall of the heat insulating part 600. (Not shown) may be a fastening method.

The heat insulating part 600 surrounding the outer circumferential surface of the crucible 200 may be formed of one member, but may be formed of a plurality of members. For example, when the two barrier members 300 are disposed in the vertical direction, the first heat insulation is disposed between the barrier member 300 disposed on the upper side and the barrier member 300 disposed on the lower side. Consists of a portion 600 and a second heat insulating portion 600 disposed at the lower end of the barrier member 300 disposed below and surrounding the outside of the crucible 200 disposed below the barrier member 300. Can be. In this case, as each of the moving parts 500 rotates, each of the insulating parts 600 coupled to the moving parts 500 rotates, and each of the barrier members connected to each of the insulating parts 600 is rotated. 300 can be rotated together. However, according to another exemplary embodiment, each of the barrier members 300 and each of the insulating parts 600 disposed at the lower end of each of the barrier members 300 may be independently rotated.

The heat generating part 700 is disposed outside the heat insulating part 600 and serves to heat the crucible 200. According to an exemplary embodiment, the heating part 700 may be an induction coil, and in this case, by heating a crucible 200 by applying a current to the induction coil, the solution 110 charged in the crucible 200 may be heated. .

Hereinafter, the barrier member 300 will be described in more detail.

First, although FIG. 1 and FIG. 2 to FIG. 7 to be described below, a case in which two barrier members 300 are illustrated as an embodiment of the present invention, the number of the barrier members 300 is not limited thereto. .

FIG. 2 is a block diagram illustrating a structure of a barrier member in a single crystal growth apparatus according to an exemplary embodiment of the present invention, and FIG. It is a figure which shows a state.

As shown in FIG. 2, a plurality of barrier members 300 according to an embodiment of the present invention may be formed, and the first barrier member 310 disposed on the crucible 200 may be formed of a plurality of barrier members 300. The second barrier member 320 may be disposed above the barrier member 310 to be parallel to the first barrier member 310.

FIG. 3A illustrates the first barrier member 310, FIG. 3B illustrates the second barrier member 320, and the first barrier member 310 and the second barrier member 310. The 320 may have different openings 330. As such, by using the openings 300 having different shapes, an optimum angle of view for observing the silicon carbide seeds in contact with the solution 110 in the crucible 200 is ensured, so that the observation can be made more clearly. Can be. In addition, by arranging the openings 300 of different shapes in a staggered manner, there is an effect of minimizing heat dissipation through a straight path open to the outside as compared with the case of using the openings of the same shape.

By moving the position of each of the openings 330 while rotating the respective barrier member 300, the opening and closing of the observation window can be adjusted by adjusting the position where the openings 330 of the two barrier members 300 overlap. Will be. Specifically, when the openings 330 overlap, an observation window is generated. Otherwise, the opening 330 of one of the barrier members 300 is hidden by the other barrier member 300 so that the observation window is closed. It does not occur Here, the observation window refers to a portion where the opening 330 of the first barrier member 310 and the opening 330 of the second barrier member 320 overlap in a direction in which the pulling shaft 400 extends.

Specifically, in relation to the rotational movement of the barrier member 300, one of the first barrier member 310 and the second barrier member 320 may be fixed and only the other thereof may be rotated. For example, the first barrier member 310 disposed below is fixed to arrange the position of the opening 330 provided in the first barrier member 310 to be fixed at a predetermined position. The position of the opening 330 provided in the second barrier member 320 may be moved by rotating the second barrier member 320 disposed on the member 310. As such, by rotating only the second barrier member 320, the first barrier member 310 and the second barrier member 320 may be aligned or shifted so that the openings 330 provided in each of the second barrier member 320 are aligned. The opening and closing of the observation window can be adjusted. Alternatively, the second barrier member 320 may be fixed, and the first barrier member 310 may be rotated. Alternatively, the first barrier member 310 and the second barrier member 320 may both be rotated as shown in FIG. 4.

4 is a view showing a rotation direction of the barrier member in the single crystal growth apparatus according to the embodiment of the present invention.

FIG. 4A illustrates the first barrier member 310 and the second barrier member 320 being rotated in the same direction, and FIG. 4B illustrates the first barrier member 310 and the second barrier member 320. The barrier member 320 is rotated in the opposite direction. As described above, the first barrier member 310 and the second barrier member 320 may each independently rotate and may have different rotational speeds.

In some embodiments, the barrier member 300 may be configured as a heat insulating member. In the case of the barrier member 300 formed of the heat insulating member, the upper side of the crucible 200 is structured to be wrapped with the heat insulating member, thereby reducing heat dissipation.

FIG. 5 is a view showing an observation window opened in the single crystal growth apparatus according to the embodiment of the present invention.

In FIG. 5A, each of the openings 330 of the first barrier member 310 and the openings 330 of the second barrier member 320 are arranged in a line so that the observation window 350 may be arranged. 5 (b) is a view showing a state in which the barrier member 300 of FIG. 5 (a) is viewed from above. As shown in FIG. 5 (b), it is disposed below the second barrier member 320 and the second barrier member 320 and is visible through the opening 330 of the second barrier member 320. A portion of the first barrier member 310 may be confirmed, and the observation window 350 in the open state may be confirmed by overlapping the openings 330. That is, the observation window 350 in FIG. 5 (b) in the open state means that the openings 330 of the first barrier member 310 and the second barrier member 320 are arranged to overlap each other. This means that the inside of the crucible 200 can be observed through the observation window 350 shown in FIG. 5 (b). The size of the open observation window 350 through which the inside of the crucible 200 can be observed may vary depending on the size and position of the opening 330 of each of the barrier members 300, and each of the barrier members 300. The angle of rotation may also vary.

6 is a view showing a state in which the observation window is closed in the single crystal growth apparatus according to an embodiment of the present invention.

While the barrier members 300 of FIG. 5 are rotated so that the respective openings 330 are arranged in a line, the barrier members 300 of FIG. 6 are rotated so that the respective openings 330 are offset. Therefore, in FIG. 6, only the second barrier member 320 and the first barrier member 310 are shown, and the observation window in the open state as shown in FIG. 5, in which each of the openings 330 is overlapped. 350 is not visible. As such, when the observation window 350 is closed, the inside of the crucible 200 cannot be observed at all through the observation window 350. Therefore, when the observation window 350 is closed, it may block the heat exiting to the top of the crucible 200.

As described above, the single crystal growth apparatus 10 of the present invention blocks the upper side of the crucible 200 with the barrier member 300 to increase the heat blocking effect as compared with the conventional single crystal growth apparatus, and at the same time, the first barrier member It is possible to easily control the opening and closing of the observation window 350 by rotating the 310 and the second barrier member 320 so that the inside of the crucible 200 during the single crystal growth can be easily observed, thereby increasing the degree of freedom of observation during the process. It is significant in that respect.

7 is a flow chart of a single crystal growth method using a single crystal growth apparatus according to an embodiment of the present invention.

As shown in FIG. 7, in the single crystal growth method using the single crystal growth apparatus according to an embodiment of the present invention, the seed crystals provided at the bottom of the pulling shaft move to a solution inside the crucible to grow single crystals (S100). And a barrier member including a first barrier member and a second barrier member disposed above the crucible, respectively, to rotate the position of the openings having different shapes provided in the barrier members. It may include adjusting (S200).

As described above, the single crystal growth method using the single crystal growth apparatus according to the embodiment of the present invention, by adjusting the opening and closing of the observation window provided in the barrier member, it is possible to observe the growth process of the silicon carbide to improve the convenience of the process To increase the efficiency of the process by effectively blocking the heat dissipated through the observation window.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

10: single crystal growth device
100: chamber
110: solution
200: crucible
300: barrier member
310: first barrier member
320: second barrier member
330: opening
350: observation window
400: pulling shaft
410: seed crystal
500: moving part
510: guide part
600: insulation
700: heating unit

Claims (11)

As a single crystal growth apparatus using a solution method,
chamber;
A crucible disposed inside the chamber;
A barrier member including a first barrier member disposed above the crucible, and a second barrier member disposed in parallel with the first barrier member above the first barrier member;
A pulling shaft passing through the barrier member; And
One end is coupled to the diaphragm member and the other end is in contact with the chamber, and includes a moving portion that rotates with the diaphragm member about the pulled shaft,
A first opening is formed in the first barrier member, and a second opening is formed in the second barrier member, and the first barrier member is rotated by at least one of the first barrier member and the second barrier member. The single crystal growth apparatus in which the arrangement | positioning of 1st opening part and said 2nd opening part changes mutually. The method of claim 1,
The barrier member,
A single crystal growth apparatus that is an insulating member. The method of claim 1,
The single crystal growth apparatus of which the first opening portion and the second opening portion have different shapes. The method of claim 1,
And the first barrier member and the second barrier member each independently rotate. The method of claim 1,
The chamber is
And a groove-shaped guide part disposed along a moving path of the moving part in a portion in contact with the moving part. The method of claim 5,
The guide unit,
The single crystal growth apparatus is disposed on at least one of the top, bottom and side surfaces of the chamber. The method of claim 1,
Single crystal growth apparatus coupled to the barrier member a plurality of moving parts. The method of claim 1,
Single crystal growth apparatus further comprises a heat insulating portion disposed on the outer peripheral surface of the crucible. The method of claim 8,
The outer surface of the heat insulating portion is coupled to one end of the single crystal growth apparatus. The method of claim 8,
Single crystal growth apparatus further comprises a heat generating portion disposed outside the heat insulating portion. In the single crystal growth method,
Seed crystals provided at the bottom of the pulling shaft move to a solution in the crucible to grow single crystals; And
A barrier member including a first barrier member and a second barrier member disposed above the crucible is rotated, respectively, to open and close the observation window by moving the positions of the openings having different shapes provided in each of the barrier members. A single crystal growth method comprising the step of controlling.

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