KR20190091763A - Temperature controlling device and Processing apparatus of semiconductor including the same - Google Patents

Abstract

A temperature control device includes: a support plate on which a substrate is mounted; a heat transfer layer provided below the support plate; a temperature control unit provided below the heat transfer layer; and a heat exchange unit provided below the temperature control unit. The temperature control unit can include at least one thermoelectric module. The thermoelectric module can include: a first substrate in contact with the heat transfer layer; a second substrate in contact with the heat exchange unit; and an n-type semiconductor device and a p-type semiconductor device provided between the first substrate and the second substrate.

Description

Temperature controlling device and semiconductor processing apparatus including the same {Temperature controlling device and Processing apparatus of semiconductor including the same}

Embodiments relate to a temperature control device and a semiconductor processing device.

In general, the semiconductor device may be manufactured through various kinds of semiconductor processing apparatus. Such semiconductor processing apparatuses include a deposition apparatus for depositing a semiconductor material on a substrate, an etching apparatus for etching, a cleaning apparatus for cleaning, or an inspection apparatus for inspecting an abnormality of a substrate.

The temperature required for the substrate, that is, the semiconductor device, may be varied to perform the semiconductor process to meet various process conditions. Sometimes the temperature of the substrate must be high to cool, and sometimes the temperature of the substrate must be low and heated.

Conventionally, after cooling the chuck base by lowering the temperature of the chuck, the temperature is adjusted using a heater, and the helium (He) gas is sprayed onto the substrate to cool.

However, the temperature increase of the substrate by the heater or the cooling using helium (He) gas is difficult to precise temperature control due to the limitation of temperature control under severe plasma process conditions.

The embodiment aims to solve the above and other problems.

Another object of the embodiment is to provide a temperature control device and a semiconductor processing device having a novel structure.

Another object of the embodiment is to provide a temperature control device and a semiconductor processing device that can shorten the process time.

Another object of the embodiment to provide a temperature control device and a semiconductor processing device capable of precise temperature control.

According to a first aspect of the embodiment to achieve the above or another object, the temperature control device, the support plate on which the substrate is seated; A heat transfer layer disposed below the support plate; A temperature control unit disposed below the heat transfer layer; And a heat exchanger disposed below the temperature control unit. The temperature controller may include at least one thermoelectric module. The thermoelectric module may include a first substrate in contact with the heat transfer layer; A second substrate in contact with the heat exchanger; And an n-type semiconductor device and a p-type semiconductor device disposed between the first substrate and the second substrate.

According to a second aspect of the embodiment, the temperature control device includes a support plate on which the substrate is seated; A heat transfer layer disposed below the support plate; A temperature control unit disposed below the heat transfer layer; And a heat exchanger disposed below the temperature control unit. The heat transfer layer, a heat transfer plate; A first extension part extending in a lower direction from one side of the heat transfer plate; And a second extension part extending in a lower direction from the other side of the heat transfer plate. The heat exchange unit, a heat dissipation plate; And an extension part extending in an upper direction from one side of the heat dissipation plate. The extension part of the heat exchange part may be located between the first extension part and the second extension part of the heat transfer layer. The temperature controller may include a first thermoelectric module group disposed between the first extension part of the heat transfer layer and the extension part of the heat exchange part; And a second thermoelectric module group disposed between the second extension part of the heat transfer layer and the extension part of the heat exchange part.

According to a third aspect of the embodiment, the temperature control device, the support plate on which the substrate is seated; A heat transfer layer disposed below the support plate; A temperature control unit disposed below the heat transfer layer; And a heat exchanger disposed below the temperature control unit. The heat transfer layer, a heat transfer plate; A first extension part extending in a lower direction from one side of the heat transfer plate; And a second extension part extending in a lower direction from the other side of the heat transfer plate. The heat exchange unit, a heat dissipation plate; And an extension part extending in an upper direction from one side of the heat dissipation plate. The extension part of the heat exchange part may be located between the first extension part and the second extension part of the heat transfer layer. The temperature controller may include a first thermoelectric module group disposed between the first extension part of the heat transfer layer and the extension part of the heat exchange part; A second thermoelectric module group disposed between the second extension part of the heat transfer layer and the extension part of the heat exchange part; And a third thermoelectric module group disposed between the heat transfer plate of the heat transfer layer and an upper side of the extension part of the heat exchange unit.

According to the fourth aspect of the embodiment, the semiconductor processing apparatus comprises: a chamber; And the temperature control device installed at one side of the chamber.

The effects of the temperature control device and the semiconductor processing device according to the embodiment are as follows.

According to at least one of the embodiments, a thermoelectric module is disposed under the support plate on which the substrate is seated to cool or heat the support plate through the temperature control unit, thereby rapidly cooling or heating the substrate to a desired temperature so as to provide a process time. There is an advantage that can be shortened.

In accordance with at least one of the embodiments, a heat exchanger is disposed below the temperature control unit to quickly release heat absorbed through the temperature control unit to the outside, thereby shortening the process time by cooling or heating the substrate to a desired temperature more quickly. There is an advantage.

According to at least one of the embodiments, the substrate is maintained at a constant temperature by cooling or heating the support plate at any time through the control of the temperature control unit during the process, thereby increasing the electrical and optical characteristics of the semiconductor device or the deposition thickness or etching thickness The advantage is that it can be precisely controlled to be uniform.

According to at least one of the embodiments, by controlling the temperature of the support plate primarily by using a refrigerant or cooling water flowing in the heat exchanger to bring the temperature of the substrate close to within the threshold, the temperature control unit when the temperature of the substrate is within the threshold The temperature of the support plate may be secondarily adjusted by the power applied to the substrate to be a temperature required for the substrate, that is, a process temperature. As such, precise temperature control is possible to match the process temperature of the substrate through the primary temperature control by the heat exchanger and the secondary temperature control by the temperature controller, thereby improving reliability of the product.

According to at least one of the embodiments, by configuring a hybrid thermoelectric module is a mixture of a horizontal thermoelectric module and a vertical thermoelectric module, more cooling paths or heating paths are formed to enable faster cooling or heating. In addition, by maintaining the support plate at a desired temperature within a faster time, the process time can be significantly shortened.

According to at least one of the embodiments, the first thermoelectric module group and the second thermoelectric module group including a plurality of thermoelectric modules are disposed on both sides of the extension of the heat exchanger, the third thermoelectric module comprising a plurality of thermoelectric modules above the heat exchanger The thermoelectric module group is arranged to increase the number of thermoelectric modules per unit volume to transfer heat to the heat exchanger more and faster, thereby improving cooling efficiency.

Further scope of the applicability of the embodiments will become apparent from the detailed description below. However, various changes and modifications within the spirit and scope of the embodiments can be clearly understood by those skilled in the art, and therefore, specific embodiments, such as the detailed description and the preferred embodiments, are to be understood as given by way of example only.

1 is a schematic diagram of a thermostat according to an embodiment.
2 shows a temperature regulating device according to a first embodiment.
3 shows a temperature regulating device according to a second embodiment.
4 shows a temperature regulating device according to a third embodiment.
5 shows a temperature regulating device according to a fourth embodiment.
6 shows a temperature regulating device according to a fifth embodiment.
7 shows a temperature regulating device according to a sixth embodiment.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments disclosed herein will be described in detail with reference to the accompanying drawings, and the same or similar components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "unit" for components used in the following description are given or used in consideration of ease of specification, and do not have distinct meanings or roles from each other. In addition, in describing the embodiments disclosed herein, when it is determined that the detailed description of the related known technology may obscure the gist of the embodiments disclosed herein, the detailed description thereof will be omitted. In addition, the accompanying drawings are intended to facilitate understanding of the embodiments disclosed herein, but are not limited to the technical spirit disclosed herein by the accompanying drawings, all changes included in the spirit and scope of the embodiments, It should be understood to include equivalents and substitutes.

1 is a schematic diagram of a thermostat according to an embodiment.

Referring to Figure 1, the temperature control apparatus according to the embodiment may include a support plate 10, the temperature control unit 20 and the heat exchange unit (30).

The support plate 10 may allow the substrate 5 to perform various processes to be seated or supported. For example, after the substrate 5 is seated on the support plate 10, a deposition process or an etching process may be performed using plasma. For example, after the substrate 5 is seated on the support plate 10, the presence of the abnormality of the substrate 5 may be checked using inspection equipment.

The support plate 10 may include an electrostatic chuck plate. The electrostatic chuck plate may be used in a deposition apparatus or an etching apparatus.

The electrostatic chuck plate may fix the substrate 5 by using static electricity. For example, when electric power is applied to the electrostatic chuck plate, opposite charges may be generated on the top and bottom surfaces of the electrostatic chuck plate. By this charge, the substrate 5 can be fixed to the upper surface of the electrostatic chuck plate.

The structure of the electrostatic chuck plate in more detail will be described later.

The support plate 10 may include a probe chuck plate. The probe chuck plate may be a plate on which the substrate 5 is seated so that inspection can be performed.

The temperature control unit 20 may be disposed below the support plate 10. The temperature control unit 20 may be disposed above the heat exchange unit 30. In other words, the temperature controller 20 may be disposed between the support plate 10 and the heat exchanger 30.

The size of the heat exchanger 30 may be equal to or larger than the size of the temperature control unit 20 and / or the size of the support plate 10.

The upper side of the temperature control unit 20 may be in contact with the lower side of the support plate (10). The lower side of the temperature control unit 20 may be in contact with the upper side of the heat exchanger (30).

As an example, the upper side of the temperature control unit 20 may be attached to the lower side of the support plate 10 using a first adhesive (not shown). The lower side of the temperature control unit 20 may be attached to the upper side of the heat exchanger 30 using the second adhesive (not shown). The first and second adhesives may be made of a material having excellent insulation and adhesion.

As another example, the temperature controller 20 may be fastened to the support plate 10 and / or the heat exchanger 30 using bolts or clamps.

The temperature controller 20 may adjust the temperature of the support plate 10 to ultimately adjust the temperature of the substrate 5 seated on the support plate 10.

The temperature control unit 20 may cool the support plate 10. Alternatively, the temperature control unit 20 may heat the support plate 10.

In an embodiment, the temperature control unit 20 may include a thermoelectric module, and the cooling or heating performance of the thermoelectric module may be a power or coolant circulated in the heat exchanger 30 to be described later. It can be determined by the temperature or type of. For example, the greater the magnitude of power applied to the thermoelectric module and / or the lower the temperature of the refrigerant or cooling water circulated in the heat exchanger 30, the faster the temperature of the support plate 10 may be cooled to a desired temperature. The lower the temperature of the refrigerant or cooling water circulated in the heat exchanger 30 will be described later in detail with respect to the temperature of the support plate 10.

In the embodiment, the refrigerant refers to all substances that cause cooling in a broad sense, and mainly heats from the surroundings by evaporating in a low temperature part (evaporator) while circulating inside a cycle of a refrigerating device, a heat pump, an air conditioner, and a small temperature difference thermal energy use engine. It may refer to a working fluid that absorbs and releases heat from the hot portion (condenser). For example, in the embodiment, the refrigerant may include ammonia, freon (ClFC, chloro-fluoro-carbon), hydrochlorochlorofluorocarbon (HCFC), and hydrogen fluorocarbon ( HFC, hydro-fluoro-carbon, hydrogen-fluorinated olefin (HFO), methyl chloride, etc. may be employed, and liquid helium and liquid hydrogen may be used to lower the cryogenic temperature.

Cooling water may refer to water (water) capable of temperature control through heat exchange.

Refrigerant or cooling water may be supplied from a supply not shown. The refrigerant or cooling water supplied from the supply part may be circulated through the heat exchange part 30 and then provided to the supply part again. The coolant or the coolant provided as the supply unit may be cooled and then supplied to the heat exchanger 30.

In an embodiment, the temperature controller 20 may include a plurality of regions in order to maintain a uniform temperature in the entire region of the support plate 10, and the power in each region may be controlled differently. For example, in the embodiment, greater power (second power) is applied to the second area (not shown) than the first area (not shown) in the temperature control part 20, and the second part of the temperature control part 20 is applied. More power (third power) may be applied to the third region (not shown) than to the second region. For example, when temperature control is not performed for each of the first to third regions of the temperature controller 20. During the process, the temperature of the first region of the support plate 10 corresponding to the first region of the temperature controller 20 is about 41 ° C., and the support corresponds to the second region of the temperature controller 20. The temperature of the second region of the plate 10 may be about 48 ° C., and the temperature of the third region of the support plate 10 corresponding to the third region of the temperature controller 20 may be about 55 ° C.

At this time, when the temperature of the entire region of the support plate 10 should be maintained at 15 ° C. during the process, a first power is applied to the first region of the temperature controller 20 so that the first region of the support plate 10 is maintained. The temperature of can be lowered from 41 ℃ to 15 ℃. A second power is applied to the second region of the temperature controller 20 so that the temperature of the second region of the support plate 10 may be lowered from 48 ° C. to 15 ° C. A third power is applied to the third region of the temperature controller 20 so that the temperature of the third region of the support plate 10 may be lowered from 55 ° C to 15 ° C. The second power may be greater than the first power and the third power may be greater than the second power.

 Through this, according to the embodiment, a uniform temperature may be maintained in the entire region of the support plate 10. The thermoelectric module according to the embodiment may be cooled or heated by using a Peltier effect, a phenomenon in which heat is absorbed (or generated) by electric power. The Peltier effect is a phenomenon in which two types of metal ends are connected and a current is flowed therein, where one substrate absorbs heat and the other substrate generates heat in accordance with the current direction. If semiconductors such as bismuth and tellurium having different electric conduction methods are used instead of the two kinds of metals, a Peltier device having an efficient endothermic and exothermic effect can be obtained. The Peltier device can switch between endothermic and exothermic according to the current direction, and the endothermic and exothermic amount can be adjusted according to the amount of current.

In an embodiment, the thermoelectric module may cool or heat the support plate 10 according to the polarity of the applied voltage. The voltage may be, for example, a direct current (DC) voltage, but is not limited thereto.

For example, when a positive voltage is applied to the thermoelectric module, the support plate 10 may be cooled. Specifically, when a positive voltage (+) is applied to the thermoelectric module, one side of the thermoelectric module, for example, an area in contact with the support plate 10 is absorbed, and the other side of the thermoelectric module, for example, an area in contact with the heat exchanger 30. May be exothermic. In this case, the support plate 10 in contact with one side of the thermoelectric module to be absorbed is cooled, the heat exchanger 30 in contact with the other side of the thermoelectric module to generate heat can be heated. That is, the endotherm obtained at one side of the thermoelectric module may be converted to heat generation at the other side of the thermoelectric module.

On the other hand, when a negative voltage (−) is applied to the thermoelectric module, the support plate 10 may be heated. Specifically, when a negative voltage (-) is applied to the thermoelectric module, the support plate 10 in contact with one side of the thermoelectric module to generate heat is heated, and the heat exchanger 30 in contact with the other side of the thermoelectric module to endotherm is cooled. Can be. That is, the endotherm obtained at the other side of the thermoelectric module may be converted to heat generation at one side of the thermoelectric module.

Therefore, the support plate 10 may be cooled or heated depending on the polarity of the voltage applied to the thermoelectric module.

Referring back to FIG. 1, the heat exchanger 30 may be disposed under the temperature control unit 20. Specifically, the upper side of the heat exchanger 30 may be in contact with the lower side of the temperature control unit 20.

The heat exchanger 30 may have the same size as the support plate 10 and / or the temperature control unit 20, but is not limited thereto.

The heat exchanger 30 may heat dissipate the temperature controller 20, that is, the heat exchanger 30 may quickly release heat generated by the temperature controller 20 to the outside. Therefore, the heat exchanger 30 may be referred to as a cooling member, a cooling plate, a heat radiation member, a heat radiation plate, or the like.

A flow path through which a coolant or coolant flows may be disposed in the heat exchange unit 30. These flow paths can be arranged in various forms. The flow path may have, for example, a spiral flow path, but is not limited thereto. The flow path may be formed separately from the heat exchanger 30 and installed in the heat exchanger 30 or may be collectively formed by a molding process when the heat exchanger 30 is manufactured.

The heat exchange part 30 may be formed in a plate shape. The heat exchanger 30 may be made of a material having excellent heat dissipation performance. For example, the heat exchanger 30 may be made of a metal material such as aluminum or an alloy material such as aluminum alloy.

In the temperature control apparatus according to the embodiment, the thermoelectric module is disposed as the temperature controller 20 under the support plate 10 on which the substrate 5 is seated, thereby cooling or supporting the support plate 10 through the temperature controller 20. By heating, the substrate 5 can be rapidly cooled or heated to a desired temperature to shorten the process time.

In the temperature control apparatus according to the embodiment, the heat exchanger 30 is disposed below the temperature control unit 20 to quickly release the heat absorbed through the temperature control unit 20 to the outside, so that the substrate 5 may be more quickly. The process time can be shortened by cooling or heating to the desired temperature.

Temperature control apparatus according to the embodiment by cooling or heating the support plate 10 from time to time through the control of the temperature control unit 20 during the process to maintain a constant temperature of the substrate 5, the electrical and The optical properties, the deposition thickness and the etching thickness can be precisely controlled to be uniform. For example, when the current temperature of the substrate 5 is higher than the process temperature, the support plate 10 may be cooled by the positive voltage applied to the temperature controller 20. For example, when the current temperature of the substrate 5 is lower than the process temperature, the support plate 10 may be heated by a negative voltage applied to the temperature controller 20.

The temperature control apparatus according to the embodiment primarily adjusts the temperature of the support plate 10 by using a coolant or cooling water flowing in the heat exchanger 30 to bring the temperature of the substrate 5 closer to the threshold within the threshold value. When the temperature of) is within the threshold value, the temperature of the support plate 10 may be secondarily adjusted by the voltage applied to the temperature controller 20 so as to be the temperature required for the substrate 5, that is, the process temperature. . In this way, precise temperature control is possible to match the process temperature of the substrate 5 through the primary temperature control by the heat exchange unit 30 and the secondary temperature control by the temperature control unit 20, the reliability of the product This can be improved.

Hereinafter, the temperature control device according to the embodiment will be described in more detail. In particular, the connection structure between the temperature control unit 20 and the support plate 10 and the heat exchange unit 30 will be described in more detail.

2 to 7 is a detailed view of a part of the thermostat shown in FIG.

<First Embodiment>

2 shows a temperature regulating device according to a first embodiment.

Referring to FIG. 2, the temperature adjusting device according to the first embodiment may be provided with a support plate 10 on which the substrate 5 is seated. The temperature control unit 20 may be disposed below the support plate 10. The heat exchanger 30 may be disposed below the temperature control unit 20.

The support plate 10 may include a dielectric layer 101 and an electrode layer 103 disposed under the dielectric layer 101.

The dielectric layer 101 may have a plate shape. For example, the top surface of the dielectric layer 101 may have a shape corresponding to the bottom surface of the substrate 5.

The dielectric layer 101 may be formed of a material having a predetermined dielectric constant and thermal conductivity.

Charges that are opposite to each other may be formed on the top and bottom surfaces of the dielectric layer 101 by the power applied to the electrode layer 103. For example, a negative charge may be formed on the top surface of the dielectric layer 101 by the power applied to the electrode layer 103, and a positive charge may be formed on the bottom surface of the dielectric layer 101. In this case, when the substrate 5 is positively charged, the attractive force is applied by the negative charge formed on the upper surface of the dielectric layer 101, and the attractive force is applied to the substrate 5 by the attractive force. It may be fixed on the support plate (10).

When the power applied to the electrode layer 103 is cut off, since the charges formed on the upper and lower surfaces of the dielectric layer 101 disappear, the attraction force no longer acts between the dielectric layer 101 and the substrate 5. 5) can be unlocked.

For example, when a process is loaded into the chamber and the substrate 5 is seated on the support plate 10, power may be applied to the electrode layer 103 to generate charge on the surface of the dielectric layer 101. . For example, when the substrate 5 is unloaded out of the chamber after the process is performed, the power applied to the electrode layer 103 may be cut off and the fixing of the substrate 5 may be released.

In an embodiment, the electrode layer 103 is described as being disposed under the dielectric layer 101, but the electrode layer 103 may be disposed inside the dielectric layer 101.

Although one electrode layer 103 is described in the embodiment, two or more electrode layers may be used.

The temperature control unit 20 may be disposed below the support plate 10. The temperature control unit 20 may be in contact with the support plate 10.

In an embodiment, the temperature controller 20 may include a thermoelectric module. The thermoelectric module may include a plurality of thermoelectric elements.

The thermoelectric device may include a first substrate 111, an n-type semiconductor device 113, a p-type semiconductor device 115, and a second substrate 117.

The first substrate 111 and the second substrate 117 may be heat transfer layers having excellent thermal conductivity. The first substrate 111 and the second substrate 117 may be an insulating substrate. The first substrate 111 and the second substrate 117 may be, for example, Al 2 O 3, but are not limited thereto.

The first substrate 111 may include a plurality of electrodes. In addition, the second substrate 117 may include a plurality of electrodes. The electrode may be formed of a metal material having excellent electrical conductivity. The electrode may be made of copper (Cu), but is not limited thereto.

The n-type semiconductor device 113 may be formed of a semiconductor material including an n-type dopant, and the p-type semiconductor device 115 may be formed of a semiconductor material including a p-type dopant. The n-type semiconductor device 113 may be electrically connected to an electrode of the first substrate 111 and an electrode of the second substrate 117. The p-type semiconductor device 115 may be electrically connected to an electrode of the first substrate 111 and an electrode of the second substrate 117.

Power may be applied to the electrodes of the first substrate 111 and the electrodes of the second substrate 117. In this case, the first substrate 111 and the second substrate due to the Peltier effect of the n-type semiconductor device 113 and the p-type semiconductor device 115 disposed between the first substrate 111 and the second substrate 117. One of the substrates 117 may endothermic and the other may generate heat.

The heat exchanger 30 may be disposed below the temperature control unit 20. The heat exchanger 30 may be in contact with the bottom surface of the thermoelectric module, specifically, the second substrate 117 of the thermoelectric device.

Therefore, when the first substrate 111 of the thermoelectric module is absorbed by the cooling operation of the temperature controller 20 and the second substrate 117 generates heat, the heat generated from the second substrate 117 is transferred to the heat exchanger ( 30) can be quickly released to the outside.

When the flow path is disposed inside the heat exchange unit 30 and the coolant or the coolant flows through the flow path, the heat dissipation performance may be further improved.

2, the temperature adjusting device according to the first embodiment may further include a heat transfer layer 107. The heat transfer layer 107 may facilitate heat transfer between the support plate 10 and the temperature control unit 20. For example, the heat transfer layer 107 may be formed of a metal material such as aluminum having a plate shape and excellent heat transfer performance.

For example, when the temperature controller 20 is cooled, heat of the support plate 10 may be easily transferred to the heat exchanger 30 through the temperature controller 20. For example, when the temperature control unit 20 is heated, heat generated in the temperature control unit 20 may be easily transferred to the support plate 10 through the heat transfer layer 107.

The size of the heat transfer layer 107 may be the same as the size of the support plate 10, but is not limited thereto.

The temperature regulating device according to the first embodiment may further include an insulating layer 105. The insulating layer 105 may electrically insulate the electrode layer 103 and the heat transfer layer 107 of the support plate 10.

The insulating layer 105 is formed of a material having excellent heat transfer performance and adhesion, and may be used as the heat transfer layer 107 or an adhesive layer. To this end, the insulating layer 105 may be formed of a separate insulating film, for example, SiN, BN, AlN, as well as a resin material such as epoxy, silicon, or thermal grease.

The support plate 10 and the heat transfer layer 107 may be firmly attached by the insulating layer 105. Specifically, the bottom surface of the insulating layer 105 may be attached to the top surface of the heat transfer layer 107 and the top surface of the insulating layer 105 may be attached to the support plate 10, specifically, the bottom surface of the electrode layer 103.

In the thermoelectric module according to the first embodiment, the first substrate 111 and the second substrate 117 of each of the plurality of thermoelectric elements are parallel to the bottom surface of the support plate 10 and / or the top surface of the heat exchange part 30. Can be arranged. Thus, the thermoelectric module may be referred to as a parallel type thermoelectric module.

In this structure of the thermoelectric module, the heat of the support plate 10 is cooled by the thermoelectric element after passing through the insulating layer 105 and the heat transfer layer 107 in a direction perpendicular to the lower surface of the support plate 10. After being discharged through the heat exchange unit 30. In addition, heat artificially generated in the thermoelectric element may be transferred to the support plate 10 via the heat transfer layer 107 and the insulating layer 105 in a direction perpendicular to the bottom surface of the support plate 10.

Second Embodiment

3 shows a temperature regulating device according to a second embodiment.

Referring to FIG. 3, the temperature regulating device according to the second embodiment may be provided with a support plate 10 on which the substrate 5 is seated. The temperature control unit 20 may be disposed below the support plate 10. The heat exchanger 30 may be disposed below the temperature control unit 20.

Since the structure of the support plate 10 is the same as that of the first embodiment, detailed description thereof will be omitted.

The arrangement structure of the temperature control unit 20 is different from that of the first embodiment. That is, the thermostat module 20 of the first embodiment, that is, the thermoelectric module is a horizontal thermoelectric module parallel to the lower surface of the support plate 10, whereas the thermostat module 20a, 20b of the second embodiment, that is, thermoelectric The module may be a vertical type thermoelectric module perpendicular to the bottom surface of the support plate 10.

The arrangement of the heat transfer layer 107 and the heat exchanger 30 is different from that of the first embodiment in order to arrange the vertical thermoelectric module.

The heat transfer layer 107 may include a heat transfer plate 107a, a first extension 107b, and a second extension 107c.

The heat transfer plate 107a, the first extension part 107b, and the second extension part 107c may be integrally formed, but are not limited thereto.

Each of the upper and lower surfaces of the heat transfer plate 107a may have a flat surface. That is, each of the upper and lower surfaces of the heat transfer plate 107a may have a surface parallel to the lower surface of the support plate 10.

The first extension part 107b may extend from the first area of the bottom surface of the heat transfer plate 107a in the lower direction. The second extension part 107c may extend in a downward direction from the second area of the bottom surface of the heat transfer plate 107a. The first region may be defined as the bottom surface of the heat transfer plate 107a adjacent to the first end of the support plate 10. The second region may be adjacent to the second end opposite to the first end of the support plate 10. It may be defined as a lower surface of the heat transfer plate 107a.

The first extension part 107b and the second extension part 107c may be disposed in parallel with each other.

The heat exchange part 30 may include a heat dissipation plate 30a and an extension part 30b.

The top surface of the heat radiation plate 30a may have a flat surface. The top and bottom surfaces of the heat dissipation plate 30a may have flat surfaces. That is, each of the top and bottom surfaces of the heat dissipation plate 30a may have a surface parallel to the bottom surface of the support plate 10.

The extension part 30b may extend from one side of the upper surface of the heat dissipation plate 30a along the upper direction. The heat dissipation plate 30a and the extension part 30b may be integrally formed, but are not limited thereto.

The extension part 30b of the heat exchange part 30 may be located between the first extension part 107b and the second extension part 107c of the heat transfer layer 107. That is, the extension part 30b of the heat exchange part 30 may be spaced apart from the first extension part 107b of the heat transfer layer 107 and may be spaced apart from the second extension part 107c of the heat transfer layer 107.

The first separation distance between the extension part 30b of the heat exchange part 30 and the first extension part 107b of the heat transfer layer 107 is the first distance of the extension part 30b of the heat exchange part 30 and the heat transfer layer 107. The second separation distance between the two extension portions 107c may be the same, but is not limited thereto.

The first length of the extension part 30b of the heat exchange part 30 and the second length of the first extension part 107b of the heat transfer layer 107 are the same, and the first length of the extension part 30b of the heat exchange part 30 is the same. The first length and the third length of the second extension 107c of the heat transfer layer 107 may be the same, but are not limited thereto.

The temperature controller according to the embodiment may include a first temperature controller 20a and a second temperature controller 20b.

The first temperature controller 20a may be disposed between the extension part 30b of the heat exchange part 30 and the first extension part 107b of the heat transfer layer 107. The second temperature controller 20b may be disposed between the extension part 30b of the heat exchanger 30 and the second extension part 107c of the heat transfer layer 107.

Each of the first temperature controller 20a and the second temperature controller 20b may include a thermoelectric module. The thermoelectric module may include a plurality of thermoelectric elements.

For example, an outer surface of the first substrate 111a of the thermoelectric element included in the first temperature controller 20a is in contact with an inner surface of the first extension part 107b of the heat transfer layer 107, and the second substrate ( The outer side surface of 117a may contact the first side surface of the extension portion 30b of the heat exchange portion 30. In this case, a plurality of n-type semiconductor devices 113a and a plurality of p-type semiconductor devices 115a may be included between the first substrate 111a and the second substrate 117a.

In addition, the outer surface of the first substrate 111b of the thermoelectric element included in the second temperature controller 20b is in contact with the inner surface of the second extension part 107c of the heat transfer layer 107, and the second substrate ( The outer side surface of 117b may contact the second side surface of the extension portion 30b of the heat exchanger 30. The second side may be an opposite side of the first side of the extension 30b. A plurality of n-type semiconductor devices 113b and a plurality of p-type semiconductor devices 115b may be included between the first substrate 111b and the second substrate 117b.

Meanwhile, the lower side of the first extension part 107b of the heat transfer layer 107 and the lower side of the second extension part 107c may not contact the upper surface of the heat radiating plate 30a of the heat exchanger 30. The upper side of the extension part 30b of the heat exchange part 30 may not contact the bottom surface of the heat transfer plate 107a. This is to ensure adiabatic between the heat transfer layer 107 and the heat exchanger (30). That is, when the heat transfer layer 107 and the heat exchanger 30 are in contact with each other, the heat of the support plate 10 is transferred directly to the heat exchanger 30, and the first and second temperature control units 20a and 20b The cooling effect is halved, and heat generated in the first and second temperature control units 20a and 20b is transferred to the heat exchange unit 30 through the first and second extensions 107b and 107c of the heat transfer layer 107. The heat transfer effect can be halved.

As another example, the first heat insulating layer 121 may be disposed between the lower side of the first extension part 107b of the heat transfer layer 107 and the top surface of the heat dissipation plate 30a. The second heat insulating layer 123 may be disposed between the lower side of the second extension part 107c of the heat transfer layer 107 and the upper surface of the heat dissipation plate 30a. In addition, the third heat insulating layer 125 may be disposed between the upper side of the extension part 30b of the heat exchange part 30 and the lower surface of the heat transfer plate 107a.

The first to third heat insulating layers 121, 123, and 125 may be formed of an organic material or an inorganic material. Organic materials include cork, cotton, felt, cork carbide, foam rubber, and the like. Inorganic materials include asbestos, glass wool, quartz wool, diatomaceous earth, magnesium carbonate powder, magnesia powder, calcium silicate and pearlite.

In the first temperature control unit 20 and the second temperature control unit 20b according to the second embodiment, the first substrates 111a and 111b and the second substrates 117a and 117b are formed on the bottom surface of the support plate 10. It can be placed perpendicular to. Accordingly, the thermoelectric elements of the first temperature control unit 20a and the second temperature control unit 20b may be referred to as vertical thermoelectric modules.

In the temperature control device according to the second embodiment, a cooling or heating path of at least two support plates 10 may be generated.

For example, as one cooling path, the heat of the support plate 10 is cooled by the first temperature control unit 20a via the insulating layer 105 and the first extension 107b of the heat transfer layer 107. After the heat exchanger 30 can be released via the extension portion 30b and the heat dissipation plate 30a.

For example, as another cooling path, the heat of the support plate 10 is cooled by the second thermostat 20b via the second extension 107c of the insulating layer 105 and the heat transfer layer 107. It may be released via the extension portion 30b and the heat dissipation plate 30a of the heat exchanger 30.

For example, as one heating path, heat generated in the first temperature control unit 20a is transferred to the support plate 10 via the first extension 107b and the insulating layer 105 of the heat transfer layer 107. Can be.

For example, as another heating path, heat generated in the second temperature control unit 20b may be transferred to the support plate 10 via the second extension 107c and the insulating layer 105 of the heat transfer layer 107. Can be.

As described above, in the temperature control device according to the second embodiment, at least two cooling or heating paths are formed, and thus the cooling performance and the heating performance can be significantly improved.

Third Embodiment

4 shows a temperature regulating device according to a third embodiment.

The third embodiment uses the structure of the temperature control unit 20 of the first embodiment together with the structure of the temperature control units 20a and 20b of the second embodiment. That is, the third embodiment may be provided with a temperature control unit having a hybrid type thermoelectric module including a horizontal thermoelectric module in the first embodiment and a vertical thermoelectric module in the second embodiment.

In the third embodiment, the same reference numerals are assigned to components having the same structure, shape, and / or function as the first and second embodiments.

In addition, detailed descriptions of components already described in the first and second embodiments will be omitted.

As shown in Fig. 4, the structure of the heat transfer layer 107 is similar to that of the second embodiment. That is, the heat transfer layer 107 may include a heat transfer plate 107a, a first extension part 107b, and a second extension part 107c.

The first extension part 107b may extend from the first area of the bottom surface of the heat transfer plate 107a in the lower direction. The second extension part 107c may extend in a downward direction from the second area of the bottom surface of the heat transfer plate 107a. The first region may be defined as the bottom surface of the heat transfer plate 107a adjacent to the first end of the support plate 10. The second region may be adjacent to the second end opposite to the first end of the support plate 10. It may be defined as a lower surface of the heat transfer plate 107a.

The heat exchange part 30 may include a heat dissipation plate 30a and an extension part 30b. The extension part 30b may extend from one side of the upper surface of the heat dissipation plate 30a along the upper direction.

The extension part 30b of the heat exchange part 30 may be located between the first extension part 107b and the second extension part 107c of the heat transfer layer 107. That is, the extension part 30b of the heat exchange part 30 may be spaced apart from the first extension part 107b of the heat transfer layer 107 and may be spaced apart from the second extension part 107c of the heat transfer layer 107.

The temperature controller according to the third embodiment may include a first temperature controller 20a, a second temperature controller 20b, and a third temperature controller 20c.

The first temperature controller 20a may be disposed between the extension part 30b of the heat exchange part 30 and the first extension part 107b of the heat transfer layer 107. The second temperature controller 20b may be disposed between the extension part 30b of the heat exchanger 30 and the second extension part 107c of the heat transfer layer 107. The third temperature controller 20c may be disposed between the upper side of the extension part 30b of the heat exchanger 30 and one side of the lower surface of the heat transfer layer 107. One side of the bottom surface of the heat transfer layer 107 may be located between the first extension part 107b and the second extension part 107c of the heat transfer layer 107.

Each of the first temperature controller 20a, the second temperature controller 20b, and the third temperature controller 20c may include a thermoelectric module. The thermoelectric module may include a plurality of thermoelectric elements.

For example, an outer surface of the first substrate 111a of the thermoelectric element included in the first temperature controller 20a is in contact with an inner surface of the first extension part 107b of the heat transfer layer 107, and the second substrate ( The outer side surface of 117a may contact the first side surface of the extension portion 30b of the heat exchange portion 30. In this case, a plurality of n-type semiconductor devices 113a and a plurality of p-type semiconductor devices 115a may be included between the first substrate 111a and the second substrate 117a.

For example, an outer surface of the first substrate 111b of the thermoelectric element included in the second temperature controller 20b is in contact with an inner surface of the second extension part 107c of the heat transfer layer 107, and the second substrate ( The outer side surface of 117b may contact the second side surface of the extension portion 30b of the heat exchanger 30. The second side may be an opposite side of the first side of the extension 30b. A plurality of n-type semiconductor devices 113b and a plurality of p-type semiconductor devices 115b may be included between the first substrate 111b and the second substrate 117b.

For example, an outer surface of the first substrate 111c of the thermoelectric element included in the third temperature controller 20c is in contact with one side of the lower surface of the heat transfer layer 107, and an outer surface of the second substrate 117c is heat exchanged. It may be in contact with the upper side of the extension portion (30b) of the portion (30). A plurality of n-type semiconductor devices 113c and a plurality of p-type semiconductor devices 115c may be included between the first substrate 111c and the second substrate 117c.

Meanwhile, the lower side of the first extension part 107b of the heat transfer layer 107 and the lower side of the second extension part 107c may not contact the upper surface of the heat radiating plate 30a of the heat exchanger 30. This is to ensure adiabatic between the heat transfer layer 107 and the heat exchanger (30).

As another example, the first heat insulating layer 121 may be disposed between the lower side of the first extension part 107b of the heat transfer layer 107 and the top surface of the heat dissipation plate 30a. The second heat insulating layer 123 may be disposed between the lower side of the second extension part 107c of the heat transfer layer 107 and the upper surface of the heat dissipation plate 30a.

In the temperature control device according to the third embodiment, cooling and heating paths of at least three support plates 10 may be generated.

For example, as one cooling path, the heat of the support plate 10 is cooled by the first temperature control unit 20a via the insulating layer 105 and the first extension 107b of the heat transfer layer 107. After the heat exchanger 30 can be released via the extension portion 30b and the heat dissipation plate 30a.

For example, as another cooling path, the heat of the support plate 10 is cooled by the second thermostat 20b via the second extension 107c of the insulating layer 105 and the heat transfer layer 107. It may be released via the extension portion 30b and the heat dissipation plate 30a of the heat exchanger 30. For example, as another cooling path, the heat of the support plate 10 is cooled by the third temperature control unit 20c via the heat transfer plate 107a of the insulating layer 105 and the heat transfer layer 107 and then heat exchange. It may be released via the extension portion 30b of the portion 30 and the heat dissipation plate 30a.

For example, as one heating path, heat generated in the first temperature control unit 20a is transferred to the support plate 10 via the first extension 107b and the insulating layer 105 of the heat transfer layer 107. Can be. For example, as another heating path, heat generated in the second temperature control unit 20b may be transferred to the support plate 10 via the second extension 107c and the insulating layer 105 of the heat transfer layer 107. Can be. For example, as another heating path, heat generated in the third temperature control unit 20c may be transferred to the support plate 10 via the heat transfer plate 107a and the insulating layer 105 of the heat transfer layer 107. have.

As described above, in the temperature control apparatus according to the third embodiment, the hybrid thermoelectric module is a mixture of a horizontal thermoelectric module and a vertical thermoelectric module, whereby more cooling paths or heating paths are formed, thereby enabling faster cooling or heating. . In addition, by maintaining the support plate 10 at a desired temperature within a faster time, the process time can be significantly shortened.

Fourth Example

5 shows a temperature regulating device according to a fourth embodiment.

The fourth embodiment can be configured as a variation of the first embodiment. That is, in the first embodiment, one horizontal thermoelectric module is provided, whereas in the fourth embodiment, at least two horizontal thermoelectric modules may be provided.

As shown in FIG. 5, the temperature controller 20 may be disposed between the support plate 10 and the heat exchanger 30. In detail, the temperature controller 20 may be disposed between the heat transfer layer 107 and the heat exchanger 30.

The temperature controller 20 may include a thermoelectric module group including at least two thermoelectric modules 21 and 22. These two or more thermoelectric modules 21 and 22 may be stacked on each other. Each of the thermoelectric modules 21 and 22 may include a plurality of thermoelectric elements.

For example, the first thermoelectric module 21 may be disposed under the heat transfer layer 107. The second thermoelectric module 22 may be disposed below the first thermoelectric module 21. The upper side of the first thermoelectric module 21 may contact the lower side of the heat transfer layer 107, and the upper side of the second thermoelectric module 22 may contact the lower side of the first thermoelectric module 21. When two thermoelectric modules 21 and 22 are provided, the lower side of the second thermoelectric module 22 may contact the upper side of the heat exchanger 30.

The size of the second thermoelectric module 22 may be larger than the size of the first thermoelectric module 21.

The first thermoelectric module 21 and the second thermoelectric module 22 may have a common substrate 203. That is, the first thermoelectric module 21 may include a first substrate 201, a common substrate 203, and an n-type semiconductor device and a p-type semiconductor device disposed therebetween. The n-type semiconductor device may be electrically connected to an electrode of the first substrate 201 and an electrode of the common substrate 203. The p-type semiconductor device may be electrically connected to an electrode of the first substrate 201 and an electrode of the common substrate 203.

The second thermoelectric module 22 may include a common substrate 203, a second substrate 205, and an n-type semiconductor device and a p-type semiconductor device disposed therebetween. The n-type semiconductor device may be electrically connected to an electrode of the common substrate 203 and an electrode of the second substrate 205. The p-type semiconductor device may be electrically connected to an electrode of the common substrate 203 and an electrode of the second substrate 205. Therefore, the common substrate 203 may be used as the second substrate of the first thermoelectric module 21 and at the same time as the first substrate of the second thermoelectric module 22.

Although not shown in FIG. 5, two or more thermoelectric modules may be stacked.

According to the fourth embodiment, at least two horizontal thermoelectric modules are provided to enable more efficient cooling or heating, and the process time can be significantly shortened by maintaining the support plate 10 at a desired temperature within a faster time. have.

Fifth Embodiment

6 shows a temperature regulating device according to a fifth embodiment.

The fifth embodiment can be configured as a variation of the second embodiment. That is, in the second embodiment, one vertical thermoelectric module is provided, whereas in the fifth embodiment, at least two vertical thermoelectric modules may be provided.

According to the fifth embodiment, since at least two vertical thermoelectric modules are provided, more cooling paths or heating paths are formed, thereby enabling faster cooling or heating. In addition, by maintaining the support plate 10 at a desired temperature within a faster time, the process time can be significantly shortened.

Sixth Example

7 shows a temperature regulating device according to a sixth embodiment.

The sixth embodiment can be configured as a variation of the third embodiment. That is, in the third embodiment, one horizontal thermoelectric module and one vertical thermoelectric module are provided, whereas in the sixth embodiment, at least two horizontal thermoelectric modules and vertical thermoelectric modules may be provided.

According to the sixth embodiment, since at least two of the horizontal type thermoelectric module and the vertical type thermoelectric module are each provided, a cooling path or a heating path is formed in a complex manner, thereby enabling faster cooling or heating. In addition, by maintaining the support plate 10 at a desired temperature within a faster time, the process time can be significantly shortened.

A plurality of horizontal thermoelectric modules, vertical thermoelectric modules, or hybrid thermoelectric modules provided in the first to sixth embodiments may be disposed below the support plate 10. For example, a plurality of horizontal thermoelectric modules (first and fourth embodiments) may be disposed below the support plate 10. A plurality of vertical thermoelectric modules (second and fifth embodiments) may be disposed below the support plate 10. A plurality of hybrid thermoelectric modules (third and sixth embodiments) may be disposed below the support plate 10.

The temperature controller described above may be applied to a semiconductor processing apparatus. That is, the semiconductor processing apparatus may include a chamber for processing the substrate 5 and a temperature controller installed below the chamber. One side of the chamber may be provided with an injector for injecting a gas for processing the substrate (5).

In the process of inspecting the substrate 5, the semiconductor processing apparatus may include an inspection apparatus capable of inspecting the substrate 5 on one side of the chamber in addition to the chamber and the temperature control apparatus.

The above detailed description should not be construed as limiting in all respects but should be considered as illustrative. The scope of the embodiments should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiments are included in the scope of the embodiments.

5: substrate
10: support plate
20: temperature controller
30: heat exchanger
30a: heat dissipation plate
30b: extension
101: dielectric layer
103; Electrode layer
105: insulation layer
107: heat transfer layer
107a: heat transfer plate
107b and 107c: extensions
111, 111a, 111b, 111c: first substrate
113, 113a, 113b, 113c: n-type semiconductor device
115, 115a, 115b, 115c: p-type semiconductor device
117, 117a, 117b, 117c: second substrate
121, 123, 125: heat insulation layer

Claims (13)

A support plate on which the substrate is seated;
A heat transfer layer disposed below the support plate;
A temperature control unit disposed below the heat transfer layer; And
And a heat exchanger disposed below the temperature control unit.
The temperature control unit includes at least one thermoelectric module,
The thermoelectric module,
A first substrate in contact with the heat transfer layer;
A second substrate in contact with the heat exchanger; And
And an n-type semiconductor device and a p-type semiconductor device disposed between the first substrate and the second substrate. The method of claim 1,
The at least one thermoelectric module includes a structure that is stacked along the vertical direction of the support plate, the temperature control device having a size that increases in the vertical direction. A support plate on which the substrate is seated;
A heat transfer layer disposed below the support plate;
A temperature control unit disposed below the heat transfer layer; And
It includes a heat exchanger disposed below the temperature control unit,
The heat transfer layer,
Heat transfer plates;
A first extension part extending in a lower direction from one side of the heat transfer plate; And
And a second extension part extending in a lower direction from the other side of the heat transfer plate.
The heat exchange unit,
Heat dissipation plate; And
Includes; extends extending in an upper direction from one side of the heat dissipation plate,
The extension part of the heat exchange part is located between the first extension part and the second extension part of the heat transfer layer,
The temperature control unit,
A first thermoelectric module group disposed between the first extension part of the heat transfer layer and the extension part of the heat exchange part; And
And a second thermoelectric module group disposed between the second extension part of the heat transfer layer and the extension part of the heat exchange part. The method of claim 3,
A first heat insulating layer disposed between the first extension part of the heat transfer layer and the heat dissipation plate of the heat exchange part;
A second heat insulating layer disposed between the second extension part of the heat transfer layer and the heat dissipation plate of the heat exchange part; And
And a third heat insulating layer disposed between the heat transfer plate of the heat transfer layer and the extension part of the heat exchange unit. The method of claim 3,
The first thermoelectric module group includes a plurality of thermoelectric modules,
The plurality of thermoelectric modules are the temperature control device having a size that gradually increases from the first extension of the heat transfer layer to the extension of the heat exchange unit. The method of claim 5,
The second thermoelectric module group includes a plurality of thermoelectric modules,
And the plurality of thermoelectric modules have a size that increases in size from the second extension part of the heat transfer layer to the extension part of the heat exchange part. A support plate on which the substrate is seated;
A heat transfer layer disposed below the support plate;
A temperature control unit disposed below the heat transfer layer; And
It includes a heat exchanger disposed below the temperature control unit,
The heat transfer layer,
Heat transfer plates;
A first extension part extending in a lower direction from one side of the heat transfer plate; And
And a second extension part extending in a lower direction from the other side of the heat transfer plate.
The heat exchange unit,
Heat dissipation plate; And
Includes; extends extending in an upper direction from one side of the heat dissipation plate,
The extension part of the heat exchange part is located between the first extension part and the second extension part of the heat transfer layer,
The temperature control unit,
A first thermoelectric module group disposed between the first extension part of the heat transfer layer and the extension part of the heat exchange part;
A second thermoelectric module group disposed between the second extension part of the heat transfer layer and the extension part of the heat exchange part; And
And a third thermoelectric module group disposed between the heat transfer plate of the heat transfer layer and an upper side of the extension part of the heat exchange unit. The method of claim 7, wherein
The third thermoelectric module group includes a plurality of thermoelectric modules,
And the plurality of thermoelectric modules have a size that increases in size from the heat transfer plate of the heat transfer layer to the extension of the heat exchange unit. The method of claim 7, wherein
A first heat insulating layer disposed between the first extension part of the heat transfer layer and the heat dissipation plate of the heat exchange part; And
And a second heat insulating layer disposed between the second extension part of the heat transfer layer and the heat dissipation plate of the heat exchange part. The method according to any one of claims 1 to 9,
And an insulating layer disposed between the support play and the heat transfer layer. The method according to any one of claims 1 to 9,
The heat transfer layer is a temperature control device made of a metal material. The method according to any one of claims 1 to 9,
The support plate is a thermostatic chuck plate or probe chuck plate. chamber; And
10. The semiconductor processing apparatus of claim 1, wherein the temperature control device according to any one of claims 1 to 9 is installed at one side of the chamber.

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