KR20190085255A - Preparation method of Ti3AlC2 tape and the joining method of silicon carbide using the same - Google Patents

Abstract

The present invention relates to a method of producing a Ti_3AlC_2 tape for a bonding material and a method of bonding silicon carbide using the Ti_3AlC_2 tape for the bonding material. When the Ti_3AlC_2 tape for a bonding material produced by the method according to the present invention is used, the method can realize bonding enabling the Ti_3AlC_2 tape for a bonding material to be used as a high temperature structural material or a nuclear reactor structural material by realizing bonding of silicon carbide monolith or silicon carbide fiber-reinforced silicon carbide composite (SiC_f/SiC) which can be used from room temperature to a high temperature of 1,500°C in an atmosphere where oxygen does not exist. Further, bonding uniformity can be improved by using the Ti_3AlC_2 tape for a bonding material produced by the method according to the present invention in bonding of a complicated shape. Further, characteristics′ deterioration due to the presence of a bonding material, an alien substance, is prevented and characteristics of a silicon carbide (SiC) base material can be obtained by providing a bonding method for maintaining the Ti_3AlC_2 tape for a bonding material at high temperatures for a long time, thereby diffusing the Ti_3AlC_2 tape for a bonding material into a bonding base material of silicon carbide (SiC) such that the bonding material is not present.

Description

A method of manufacturing a Ti3AlC2 tape for a bonding material and a bonding method of silicon carbide using a Ti3AlC2 tape for a bonding material,

Keeping the invention is a silicon carbide (SiC) monolith body or a silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC) can be used for bonding junction re-dissolved Ti ₃ AlC ₂ tape production process, and for a long time at a high temperature in the by Ti ₃ AlC ₂ To a bonding method in which a bonding material is not present at a bonded interface by solid-phase diffusion of a bonding material into a silicon carbide (SiC) bonded base material.

Silicon carbide (SiC) is attracting attention as a high-temperature material due to its excellent thermal, mechanical and chemical properties, and can be used as a structural material of a reactor operating at high temperature due to its stability in a neutron irradiation atmosphere.

However, due to the low diffusion coefficient and sinterability due to the strong covalent bond between carbon (C) and silicon (Si) of silicon carbide (SiC), hot sintering, which applies pressure during sintering at high temperature after addition of sintering additive, Densification is achieved.

Since a hot press is sintered using a mold, it is possible to sinter only a generally simple shape including a flat plate. Therefore, in order to manufacture a complex shape necessary for practical application, a bonding material And bonding methods are essential.

Conventional silicon carbide (SiC) bonding methods include solid-state diffusion, glass-ceramic bonding, Si-C reaction bonding and MAX bonding (MAX phase bonding).

MAX means a carbide or nitride of a layered structure having a chemical formula of M _{n + 1} AX _n , where M is a transition element, A is mainly an element of Groups IA and IVA, X is a carbon or nitrogen element , And n = 1 to 3.

The MAX phase is a high-temperature material with a melting point of 3000 ^° C or higher, which is superior in oxidation resistance and mechanical and chemical properties. However, since the material is different from silicon carbide as a base material for bonding, there is a possibility that the bonding performance may be deteriorated due to a difference in thermal expansion coefficient at the bonding interface have.

On the other hand, it is known that the bonding of the silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) is difficult as compared with the case of the short-form SiC [J. Nucl. Mater. 283-287 (2000) 1258-1261, Scr. Mater. 37 (1997) 1151-1154], recently, the bonding of SiC termites using MAX-phase Ti ₃ SiC ₂ has been reported [J. Nucl. Mater. 466 (2015) 322-327, Ceram. Int. 42 (2016) 11463-11468].

However, since the bonding material inserted between the bonding base materials for bonding is a foreign material, it may cause deterioration of various properties including the mechanical properties of the silicon carbide (SiC) as the bonding base material. Therefore, Research and development of methods are needed.

1. Korean Registered Patent No. 0882924 (Notice of Mar. 2, 2009) 2. Korea registered patent No. 1179652 (Notice of August 29, 2012) 3. US Patent No. 7407903 (Published Aug. 5, 2008)

It is an object of the present invention to provide a method of manufacturing a tape by inserting a Ti ₃ AlC ₂ tape having a constant thickness, which can be used for joining a complex shape regardless of the shape of the bonded base material.

(SiC) or silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC) which can be utilized as structural materials for high-temperature structural materials and reactors by maintaining the bonding strength even at room temperature and high temperature of 1500 ^° C. In order to solve the problem.

Based on the understanding of the bonding mechanism of silicon carbide (SiC) using the MAX phase Ti ₃ AlC ₂ , sufficient heat energy and reaction time for the solid-phase diffusion are provided during the bonding process to ensure that the bonding material, Ti ₃ AlC ₂ , And a bonding method in which a bonding material is not present at the interface.

In order to achieve the above object, the present invention provides a method for producing a binder solution, comprising: preparing a binder mixed solution by dissolving a binder, a plasticizer, and a dispersant in a solvent; (Ti ₃ AlC ₂ ) powder is added to the binder mixed solution, followed by ball milling to prepare a Ti ₃ AlC ₂ slurry; And it provides, bonded re-dissolved Ti ₃ AlC ₂ tape manufacturing method of the Ti ₃ AlC ₂ and the slurry was tape-casting (casting tape) comprising the step of manufacturing the tape ₂ AlC Ti _3.

The present invention also provides a Ti ₃ AlC ₂ tape for a joint material produced by the above method.

Further, the present invention provides a method of manufacturing a bonding material, comprising: inserting a Ti ₃ AlC ₂ tape for a bonding material into a cut bonding base material; And a step of applying heat and applying a heat treatment to the joint base material having the Ti ₃ AlC ₂ tape for the joint material inserted thereinto, and a method of joining the joint material using the Ti ₃ AlC ₂ tape for joint material.

Produced by the invention process according bonded re-dissolved Ti ₃ AlC ₂ from room temperature when using the tape 1500 ^o capable of silicon carbide (SiC) monolith bodies or silicon carbide fibers used in a high temperature C reinforced silicon carbide composites (SiC _f / SiC) The junction can be realized in an atmosphere free of oxygen to realize a junction that can be utilized as a structural material of a high-temperature structural material and a reactor.

In addition, the uniformity of the bonding can be improved by using the Ti ₃ AlC ₂ tape for bonding material manufactured by the method of the present invention for bonding of complex shapes.

Further, by keeping the Ti ₃ AlC ₂ tape for bonding material at a high temperature for a long time to diffuse into the base material of silicon carbide (SiC) to provide a joining method in which no joining material is present, property deterioration due to the presence of the joining material The characteristics of the silicon carbide (SiC) base material can be utilized.

1 is a digital image of a silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) bonded by heat treatment at 1750 ° C and 3.5 MPa pressure for 1 hour using a Ti ₃ AlC ₂ tape molded to a thickness of 60 μm;
Fig. 2 is a graph _{showing the} results of a heat treatment of silicon carbide fiber-reinforced silicon carbide (SiC) bonded by heat treatment at a temperature of 1600 캜 (a) and 1750 캜 (b) at a pressure of 3.5 MPa for 1 hour using a Ti ₃ AlC ₂ tape having a thickness of 60 탆 SEM image of the composite (SiC _f / SiC);
Fig. 3 is a graph _{showing the} results obtained by using a Ti ₃ AlC ₂ tape having a thickness of 60 탆 and heat treating it at a temperature of 1600 캜 (a) and 1750 캜 (b) under a pressure of 3.5 MPa for 1 hour to obtain a silicon carbide fiber- XRD pattern for the junction surface of the composite (SiC _f / SiC); And
FIG. 4 is a graph _{showing the} relationship between the SiC content of the bonded silicon carbide (SiC) layer and the bonded silicon carbide (SiC) layer by using a Ti ₃ AlC ₂ tape formed to a thickness of 8.6 탆 at a temperature of 1750 캜 for 7 hours while applying a pressure of 20 MPa. (A) and high-power (b) SEM images of the short-form substance.

Will be described below, the inventors bonded re-dissolved Ti ₃ AlC _2, a tape preparation and the bond re-dissolved Ti ₃ AlC detailed than the bonding method of the silicon carbide with a _second tape.

Based on the understanding of the bonding mechanism of the Ti ₃ AlC ₂ bonding material, the inventors of the present invention have found that by supplying a sufficient amount of heat energy and time during the bonding process, the Ti ₃ AlC ₂ tape for the bonding material is diffused in a solid phase between the silicon carbide (SiC) The present inventors have found that bonding without bonding materials is possible, thereby completing the present invention.

The present invention relates to a process for producing a binder mixed solution, which comprises dissolving a binder, a plasticizer and a dispersant in a solvent to prepare a binder mixed solution; (Ti ₃ AlC ₂ ) powder is added to the binder mixed solution, followed by ball milling to prepare a Ti ₃ AlC ₂ slurry; And it provides, bonded re-dissolved Ti ₃ AlC ₂ tape manufacturing method of the Ti ₃ AlC ₂ and the slurry was tape-casting (casting tape) comprising the step of manufacturing the tape ₂ AlC Ti _3.

The step of preparing the binder mixed solution includes the steps of preparing a first solution by dissolving a binder in a solvent, dissolving a plasticizer in the first solution to prepare a second solution, and dissolving the dispersant in the second solution And a step of preparing a binder mixed solution.

The step of preparing the first solution may be a step of dissolving 30 to 45 parts by weight of the binder in 100 parts by weight of the solvent to prepare the first solution, but the present invention is not limited thereto.

The second solution may be prepared by dissolving 30 to 50 parts by weight of a plasticizer in 100 parts by weight of the binder dissolved in the first solution, but is not limited thereto.

The step of preparing the binder mixed solution may include a step of dissolving 1.25 to 6.25 parts by weight of the dispersant in 100 parts by weight of the binder dissolved in the second solution to prepare a binder mixed solution, but the present invention is not limited thereto.

The binder may be any one selected from the group consisting of polyvinyl butyral, ethyl cellulose, and polyacrylate, but is not limited thereto.

The plasticizer may be any one selected from the group consisting of dioctyl phthalate, n-butyl phthalate, and polyethylene glycol, but is not limited thereto.

The dispersing agent may be any one selected from the group consisting of a polyester and a polyamine compound (Hypermer KD 1), a salt of polyacrylic acid, and oleic acid, but is not limited thereto.

In the step of preparing the Ti ₃ AlC ₂ slurry, 1,000 to 1,500 parts by weight of Ti ₃ AlC ₂ powder is added to 100 parts by weight of the binder dissolved in the binder mixed solution, followed by ball milling to form a Ti ₃ AlC ₂ slurry But it is not limited thereto.

The Ti ₃ AlC ₂ slurry may have a viscosity of 300 to 1000 cPs, but is not limited thereto.

The Ti ₃ AlC ₂ tape may have an average thickness of 5 to 100 μm, but is not limited thereto.

The present invention also provides a Ti ₃ AlC ₂ tape for a joint material produced by the above method.

Further, the present invention provides a method of manufacturing a bonding material, comprising: inserting a Ti ₃ AlC ₂ tape for a bonding material into a cut bonding base material; And a step of applying heat and applying a heat treatment to the joint base material having the Ti ₃ AlC ₂ tape for the joint material inserted thereinto, and a method of joining the joint material using the Ti ₃ AlC ₂ tape for joint material.

The bonding base material may be any one of a silicon carbide (SiC) short-form body or a silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC), but is not limited thereto.

The step of heat-treating and applying pressure to the bonded base material having the Ti ₃ AlC ₂ tape for bonding material is performed by heat treating the bonded base material having the Ti ₃ AlC ₂ tape for bonding material at 1600 to 1750 ° C for 30 minutes to 7 hours, And applying a pressure of 20 MPa to a pressure of 20 MPa.

Bonding method of bonding the base material using the bonding tape re-dissolved Ti ₃ AlC ₂ is inserted into the cut bonded mother material bonded re-dissolved Ti ₃ AlC ₂ is bonded through the tape may be a solid-phase diffusion, without being limited thereto.

Hereinafter, the inventors bonded by the following examples damper Ti ₃ AlC ₂ will be described in the tape production process, and bonding re-dissolved Ti ₃ AlC detailed than the bonding method of the silicon carbide with a _second tape. However, the present invention is not limited by these examples.

≪ Example 1 > ₃ AlC ₂  Tape manufacturing

A first solution was prepared by dissolving 30 to 45 parts by weight of a polyvinyl butyral (PVB) binder having a molecular weight of 55,000 g / mol in 100 parts by weight of a toluene / ethanol mixed solvent (weight ratio of 6: 4) .

40 parts by weight of dioctyl phthalate (DOP) plasticizer was dissolved in 100 parts by weight of the PVB binder dissolved in the first solution to prepare a second solution.

3.75 parts by weight of a polyester / polyamine (Hypermer KD 1) dispersant was dissolved in 100 parts by weight of the PVB binder dissolved in the second solution to prepare a binder mixed solution.

1,250 parts by weight of titanium-aluminum carbide (hereinafter referred to as 'Ti ₃ AlC ₂ ') powder (average particle diameter: 30 μm) was added to 100 parts by weight of the PVB binder dissolved in the binder mixture solution, Hour ball milling to prepare a Ti ₃ AlC ₂ slurry having a viscosity of 300 to 1000 cPs at a shear rate of 60 S ^-1 .

Ti ₃ AlC ₂ slurry was subjected to tape casting to a thickness of 60 탆 to prepare a Ti ₃ AlC ₂ tape for a bonding material.

≪ Example 2 > ₃ AlC ₂  Tape-based silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC)

The Ti ₃ AlC ₂ tape for bonding material prepared according to Example 1 was cut into the bonding surface shape of the silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) used as the bonding base material and inserted into the bonding surface.

BN powder was sprayed on the surface of silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC) and placed in a pressurizable graphite mold to prevent the mold and the bonded body from sticking during the bonding process.

Then, the silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC) was bonded by applying heat at a temperature of 1650 ° C. for 1 hour under a vacuum, nitrogen or argon gas atmosphere and applying a pressure of 3.5 MPa.

≪ Example 3 > ₃ AlC ₂  Tape-based silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC)

The silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) was bonded under the same conditions as in Example 2 except that the heat treatment was performed at a temperature of 1750 ^° C (see FIG. 1).

≪ Experimental Example 1 > ₃ AlC ₂  Tape-bonded silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC)

1. A bonded silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC)

A scanning electron microscope (SEM) (Hitachi S-4800) was used to analyze the structure of the silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) bonded according to Example 2 and Example 3 And the results are shown in Fig.

Figure 2 is a bond of 60 ㎛ thickness damper Ti ₃ AlC ₂ tape (Example 1) of 3.5 MPa at a temperature of 1600 ℃ (a) (Example 2) and 1750 ℃ (b) (Example 3) using SEM images of silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC) bonded by heat treatment for 1 hour under pressure are shown.

2 (a) and 2 (b), a silicon carbide fiber-reinforced silicon carbide composite containing Tyranno SA grade-3 silicon carbide (SiC) fibers in both FIG. 2 (a) SiC _f / SiC) to check for the presence of bonding a light-colored damper Ti ₃ AlC ₂ tape existing between the silicon carbide fiber reinforced silicon carbide composite material (joining of the SiC _f / SiC) interface or junction re-dissolved Ti ₃ AlC ₂ tape It can be seen that stable bonding is obtained without formation of pores or cracks.

In addition, the Ti ₃ AlC ₂ tape (Example 1) for a bonding material having a thickness of 60 μm initially used decreased to a thickness of 20 μm or less in the case of the bonding at 1600 ° C. (Example 2) ) Bonding, it was found that the thickness decreased to 10 μm or less.

This reduction in thickness is too large even when considering the maximum shrinkage of 20 to 30% that can occur during hot press sintering. Therefore, during the joining process, the Ti ₃ AlC ₂ tape for the joining material is a silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC) in the presence of oxygen.

In order to understand the Ti ₃ AlC ₂ tape bonding mechanism for the bonding material in the silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC) bonding, in order to understand the bonding mechanisms of A, B and C shown in FIG. 2 (a) The results of the composition analysis are shown in Table 1.

The point A and the point B are areas of the Ti ₃ AlC ₂ tape for the bonding material, but the presence of Si, which is a component of the silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC) as the bonding base material, Of C and a small amount of Ti are present, the presence of SiC and TiC phases is expected.

In addition, point C, which exists in an acicular form with different brightness from that of Ti ₃ AlC ₂ as a bonding material, can be inferred that TiAl is formed as an intermediate compound in terms of the atomic ratio of Ti and Al.

domain Ti (at.%) Si (at.%) Al (at.%) C (at.%) A 8.34 28.71 0.23 62.71 B 4.20 26.08 - 69.72 C 52.89 - 47.11 -

2. Silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC) bonded interface analysis

X-ray diffraction (XRD) analysis was performed to analyze the bonding interface of the silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) bonded using the Ti ₃ AlC ₂ tape for bonding material. Pan Analytical X'Pert-PRO MPD) was performed, and the results are shown in FIG.

Referring to the XRD analysis results of FIG. 3, the presence of TiAl, TiC, SiC, and TiB ₂ in addition to the Ti ₃ AlC ₂ tape for the bonding material can be grasped.

The presence of these phases can be explained by the formation of TiC and Ti ₂ AlC due to the decomposition of Ti ₃ AlC ₂ as shown in Scheme 1 below.

[Reaction Scheme 1]

Ti ₃ AlC _{2 -} > TiC + Ti ₂ AlC

Further, due to the additional decomposition of Ti ₂ AlC generated in the above reaction formula 1, TiAl and TiC are produced according to the following reaction formula 2.

[Reaction Scheme 2]

Ti ₂ AlC? TiAl + TiC

The existence of TiB ₂ shown in FIG. 3 can be explained by the following Reaction Formula 3 and Reaction Formula 4 by reaction of BN powder and Ti used to facilitate sample separation.

[Reaction Scheme 3]

3Ti + 2BN → 2TiN + TiB ₂

[Reaction Scheme 4]

_{TiN + 2BN → 2TiB 2 + 3} / 2N 2

Further, the joint marked with D re-dissolved Ti ₃ AlC ₂ tape and the silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC) Looking at the interface, the brightness is enhanced other bonding re-dissolved Ti ₃ AlC ₂ tape is silicon carbide fibers of silicon carbide composite ( (SiC _f / SiC) through the pores between SiC fibers of SiC _f / SiC (see FIG. 2 (a)), super plasticity of Ti ₃ AlC ₂ .

Therefore, the bonding re-dissolved Ti ₃ AlC bonded with _two tape of silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC) is a high temperature seconds according to the flow of the dispersion and a high temperature junction re-dissolved Ti ₃ AlC ₂ tape in accordance with the bonding material decomposition It can be inferred that this phenomenon is caused by calcination.

≪ Experimental Example 2 > ₃ AlC ₂  Tape-bonded silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC)

Table 2 shows the bonding strengths of the silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) bonded using the Ti ₃ AlC ₂ tape for bonding materials according to Examples 2 and 3 and the reported bonding strengths of the previously reported Ti ₃ SiC ₂ powder (SiC). The results of 4-point bending strength test for butt-joint specimens are shown for comparison.

No. binder Joint base material Bonding condition Bonding Sensitivity (MPa) One Ti ₃ AlC ₂ tape SiC _f / SiC composite Example 2 100.97 + - 4.79 2 Example 3 161.51 ± 12.41 3 Ti ₃ SiC ₂ powder SiC termite HP: 1600 占 폚, 30 min, 2040 MPa 110.4 4 SPS: 1600 ° C, 5 min, 30 MPa ~ 33 5 Ti ₃ SiC ₂ tape SiC termite SPS: 1500 占 폚, 5 min, 50 MPa
Tape thickness = 60 탆 99.1 6 SPS: 1600 ° C, 5 min, 50 MPa
Tape thickness = 60 탆 79.3

(HP: hot pressing, SPS: spark plasma sintering)

As shown in Table 2, the bonding strength of the silicon carbide fiber-reinforced silicon carbide composite (SiC _f / SiC) bonded using the Ti ₃ AlC ₂ tape for bonding material according to Example 2 and Example 3 was compared with that of the previously reported Ti ₃ SiC ₂ powder or Ti ₃ SiC ₂ tape, it is confirmed that the bonding strength of the silicon carbide (SiC) single body is higher than that of the silicon carbide (SiC).

This phenomenon is due to the result of bonding using silicon carbide fiber reinforced silicon carbide composite (SiCf / SiC), which is generally difficult to bond as compared with silicon carbide (SiC) termites and thus has a relatively low bonding strength.

In the case of using the Ti ₃ SiC ₂ MAX powders mainly used in the previous reports, the uneven bond thickness due to the difference of the powder distribution and the powder used as the bonding material in the case of bonding to the fine pattern The Ti ₃ AlC ₂ tape for bonding material manufactured according to the present invention is inserted into the bonding surface after the fine cutting in conformity with the shape of the bonding surface, It is confirmed that it is preferable to carry out the test.

≪ Example 4 > ₃ AlC ₂  Tape manufacturing

Except that a Ti ₃ AlC ₂ slurry was used to perform tape casting to a thickness of 8.6 탆 to prepare a Ti ₃ AlC ₂ tape for a bonding material.

≪ Example 5 > Ti for bonding material ₃ AlC ₂  Tape-based silicon carbide fiber reinforced silicon carbide composites (SiC _f / SiC)

The Ti ₃ AlC ₂ tape for bonding material produced according to Example 4 was cut into a bonding surface shape of a silicon carbide (SiC) short body used as a bonding base material and inserted into the bonding surface.

BN powder was sprayed on the surface of the silicon carbide (SiC) semispherical body and placed in a pressurizable graphite mold to prevent the mold and the bonded body from sticking to each other during the bonding process.

Then, heat treatment was performed at a temperature of 1750 ° C for 7 hours in a vacuum, nitrogen or argon gas atmosphere, and a pressure of 20 MPa was applied to bond the silicon carbide (SiC).

≪ Experimental Example 3 > ₃ AlC ₂  Analyzing tape removability

Figure 4 (a) and 4 (b) has a joint formed by a 8.6 ㎛ thickness to determine whether the possible removal of the bonding material re-dissolved Ti ₃ AlC ₂ tape (Example 4) 20 at a temperature of 1750 ^o C using (A) and high-power (b) SEM images of the silicon carbide (SiC) terminated material bonded by heat treatment for 7 hours while applying a pressure of 5 MPa.

4 (a) and 4 (b), when the heat treatment is performed for 7 hours while applying a pressure of 20 MPa at a temperature of 1750 ° C, Ti for the bonding material at the bonding interface of the silicon carbide (SiC) ₃ AlC ₂ tape (Example 4) is almost extinguished to such an extent that it is difficult to grasp the shape.

However, as shown in FIG. 4 (b), the presence of the Ti ₃ AlC ₂ tape (Example 4) for the bonding material can be partially observed only in the high magnification SEM image.

4 (a) and 4 (b) show the removal of the Ti ₃ AlC ₂ tape for the bonding material in the silicon carbide (SiC) short body bonded using the Ti ₃ AlC ₂ tape for the bonding material and the distribution of the phase, Table 2 shows the compositional analysis results for the areas A, B, and C shown in FIG.

domain Point A Point B Point C Point D Si 37.74 6.11 40.35 31.09 Ti 2.13 51.61 0.05 18.14 Al 0.33 0.39 0.81 0.45 C 59.80 41.89 58.79 50.32

Referring to Table 3, the presence of Si and C and a small amount of Ti and Al was observed mainly at the point A near the vicinity of the reduced thickness Ti ₃ AlC ₂ tape for the joint material, and the main component was SiC, Can be confirmed to be present in a small amount.

In addition, although Ti ₃ AlC ₂ tape for the initial bonding material was present, it can be confirmed that SiC exists mainly at points A and D where the existence thereof is lost due to high temperature decomposition and diffusion.

However, at point B shown in Fig. 4 (b), it can be inferred that the initial Ti ₃ AlC ₂ tape for bonding material is mainly distributed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It is to be understood that various modifications and changes may be made without departing from the scope of the appended claims.

Claims (16)

Dissolving a binder, a plasticizer, and a dispersant in a solvent to prepare a binder mixed solution;
(Ti ₃ AlC ₂ ) powder is added to the binder mixed solution, followed by ball milling to prepare a Ti ₃ AlC ₂ slurry; And
The step of tape casting the Ti ₃ AlC ₂ slurry to produce a Ti ₃ AlC ₂ tape
Wherein the Ti ₃ AlC ₂ tape for joining material has a thickness of at least ₁₀ mm. The method according to claim 1,
The step of preparing the binder mixed solution includes:
Dissolving the binder in a solvent to prepare a first solution,
Dissolving a plasticizer in the first solution to prepare a second solution, and
Dissolving the dispersant in the second solution to prepare a binder mixed solution
Wherein the Ti ₃ AlC ₂ tape for joining material has a thickness of at least ₁₀ mm. The method of claim 2,
Wherein the step of preparing the first solution comprises:
By dissolving the binder of 30 to 45 parts by weight based on 100 parts by weight of a solvent portion, characterized in that for producing a first solution, re-dissolving the bonding Ti ₃ AlC ₂ Tape method. The method of claim 2,
Wherein the step of preparing the second solution comprises:
And dissolving 30 to 50 parts by weight of a plasticizer in 100 parts by weight of the binder dissolved in the first solution to prepare a Ti ₃ AlC ₂ tape for a joint material. The method of claim 2,
The step of preparing the binder mixed solution includes:
The second solution the binder to 100 parts by weight based on the dispersant by dissolving 1.25 to 6.25 parts by weight, characterized in that for preparing a binder mixture, re-dissolve the bonding Ti ₃ AlC ₂ tape method to dissolve. The method according to claim 1,
Wherein the binder comprises:
A method for producing a Ti ₃ AlC ₂ tape for a joint material, characterized in that it is any one selected from the group consisting of polyvinyl butyral, ethyl cellulose, and poly acrylate. The method according to claim 1,
The above-
A method for producing a Ti ₃ AlC ₂ tape for a joint material, characterized in that it is any one selected from the group consisting of dioctyl phthalate, n-butyl phthalate, and polyethylene glycol. The method according to claim 1,
Preferably,
A method for manufacturing a Ti ₃ AlC ₂ tape for a joint material, characterized in that it is any one selected from the group consisting of a compound consisting of a polyester and a polyamine (Hypermer KD 1), a salt of polyacrylic acid, and oleic acid Way. The method according to claim 1,
The step of preparing the Ti ₃ AlC ₂ slurry may comprise:
Through the binder 100 parts by weight of milling (ball milling) seen after adding Ti ₃ AlC ₂ powder to 1,000 to 1,500 parts by weight with respect to dissolution in the binder mixture, characterized in that for producing the AlC ₂ slurry Ti _3, bonding re-dissolved Ti ₃ AlC ₂ tape manufacturing method. The method according to claim 1,
The Ti ₃ AlC ₂ slurry,
That has a viscosity of 300 ~ 1000 cPs, characterized in, joint damper Ti ₃ AlC ₂ tape method. The method according to claim 1,
In the Ti ₃ AlC ₂ tape,
Wherein the average thickness of the Ti ₃ AlC ₂ tape for bonding material is 5 to 100 탆. A Ti ₃ AlC ₂ tape for bonding materials, produced by the process according to any one of claims 1 to 11. Inserting the Ti ₃ AlC ₂ tape for a joint material according to claim 12 into a cut joint base material; And
Heat-treating the joint base material into which the Ti ₃ AlC ₂ tape for joining material is inserted and applying pressure
Wherein the bonding material is bonded to the base material by using a Ti ₃ AlC ₂ tape for bonding material. 14. The method of claim 13,
The bonding base material,
A method for bonding a base material using a Ti ₃ AlC ₂ tape for a bonding material, characterized in that the base material is any one of a silicon carbide (SiC) simple substance or a silicon carbide fiber reinforced silicon carbide composite (SiC _f / SiC). 14. The method of claim 13,
The step of applying heat and applying pressure to the joint base material having the Ti ₃ AlC ₂ tape for joining material inserted therein,
Said joint damper Ti ₃ AlC ₂ tape with AlC ₂ tape, bonded re-dissolved Ti ₃ of the insert the bonded base material of the 1600 to from 1750 ℃ 30 minutes to heat treatment and 3.5 to 20 MPa for 7 hours the pressure characterized in that it is Joining method of joint base material. 14. The method of claim 13,
The joining method of the joining base material using the Ti ₃ AlC ₂ tape for joining material,
And the Ti ₃ AlC ₂ tape for the bonding material inserted into the cut joint base material is bonded via solid phase diffusion to the bonding material base material using the Ti ₃ AlC ₂ tape for bonding material.

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