KR20190081992A - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

The present invention is to provide an epoxy resin composition for encapsulating a semiconductor device with a high glass transition temperature and low contraction properties in hardening and to a semiconductor device encapsulated by using the same. An epoxy resin composition for encapsulating a semiconductor device of the present invention comprises an epoxy resin, a hardener and an inorganic filler. The epoxy resin comprises a multicore epoxy resin represented by chemical formula 1. In the chemical formula 1, Ar1 is an aromatic group substituted with one or more glycidyl groups; Ar2 is a moiety including two or more glycidyl groups and xanthene structures; and R1 is hydrocarbon having 1-6 carbon atoms.

Description

TECHNICAL FIELD [0001] The present invention relates to an epoxy resin composition for encapsulating semiconductor devices, and a semiconductor device encapsulated with the epoxy resin composition. [0002] EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME [

TECHNICAL FIELD The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed with the epoxy resin composition. More specifically, the present invention relates to an epoxy resin composition for sealing a semiconductor element having a high glass transition temperature and low shrinkage characteristics, and a semiconductor device sealed using the composition.

BACKGROUND ART As a method of packaging a semiconductor device such as IC and LSI and obtaining a semiconductor device, transfer molding using an epoxy resin composition is widely used because of its low cost and suitable for mass production. The epoxy resin composition for semiconductor device encapsulation generally comprises an epoxy resin, a curing agent, an inorganic filler, and the like.

However, due to the miniaturization, light weight, and high performance of electronic products, semiconductor chips are becoming thinner, higher integration and / or surface mounting increases, which can not be solved by conventional epoxy resin compositions. Particularly, there is a problem that, due to thinning of a semiconductor device, defects such as thermal expansion between the substrate and the sealing layer, warping of the package due to heat shrinkage and chip breakage due to highly elastic cured product are liable to occur. Therefore, low shrinkage and low elasticity properties are required in order to solve the problem caused by the warping of the package and the defective problems such as chip breakage caused by the high-elasticity cured product.

There has been proposed a method of reducing the hardening shrinkage of the resin composition by a method of reducing the warpage in a package in which only the one surface on the substrate is substantially sealed with the epoxy resin composition. In organic substrates, resins having a high glass transition temperature (Tg) such as BT resins and polyimide resins are widely used, and they have a higher Tg than the molding temperature of the resin composition, which is around 170 ° C. In this case, in the cooling process from the molding temperature to the room temperature, the linear expansion coefficient of the organic substrate shrinks only in the region of? 1. Therefore, the resin composition also has a high Tg, the same? 1 as the circuit board, and a zero curing shrinkage, the warpage will be almost zero.

On the other hand, a method is known in which the coefficient of linear expansion of a substrate and the coefficient of linear expansion of a cured epoxy resin are brought close to each other in order to reduce warpage. A method of introducing a naphthalene skeleton capable of bringing? 1 closer to a substrate or lowering a linear expansion coefficient by increasing the compounding amount of an inorganic filler by using a resin having a low melt viscosity has been proposed. However, in the case of such a resin composition, fluidity and moldability are likely to be deteriorated. When a resin composition having a high Tg is used to reduce curing shrinkage, the elastic modulus generally increases greatly and is susceptible to external stress due to heat or impact .

Therefore, development of an epoxy resin composition which is excellent in fluidity and moldability and hardly shrinks in shrinkage even at a high inorganic filler ratio is desired.

It is an object of the present invention to provide an epoxy resin composition for sealing semiconductor devices having a high glass transition temperature and low shrinkage characteristics upon curing.

Another object of the present invention is to provide an epoxy resin composition for sealing a semiconductor element which can be used particularly advantageously in a semiconductor package having a one-side sealing structure.

It is still another object of the present invention to provide a semiconductor device sealed with the epoxy resin composition.

One aspect of the present invention relates to an epoxy resin composition for sealing a semiconductor device. Wherein the epoxy resin composition for sealing a semiconductor element comprises an epoxy resin; Curing agent; And an inorganic filler, wherein the epoxy resin comprises a polynuclear epoxy resin represented by the following Formula 1:

[Chemical Formula 1]

(Wherein Ar 1 is an aromatic group substituted with at least one glycidyl group, Ar 2 is a moiety containing at least two glycidyl groups and a xanthene structure, and R 1 is a hydrocarbon group having 1 to 6 carbon atoms)

Ar1 may be a phenyl group or a naphthyl group substituted with at least one glycidyl group.

In an embodiment, the polynuclear epoxy resin may be represented by the following formula 1-1:

[Formula 1-1]

(Wherein Ar 3 represents an aromatic group substituted with at least one glycidyl group, Ar 4 represents an arylene group having 6 to 12 carbon atoms, R 2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms M1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)

In an embodiment, the polynuclear epoxy resin may be represented by any one of the following formulas (1a) to (1d):

In an embodiment, the polynuclear epoxy resin may be contained in an amount of 60 to 100% by weight of the whole epoxy resin.

In an embodiment, the curing agent is selected from the group consisting of a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a xylock type phenol resin, a cresol novolak type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, Dienic phenol resins, novolac phenolic resins synthesized from bisphenol A and resole; Tris (hydroxyphenyl) methane, dihydroxybiphenyl, and the like.

In embodiments, the curing agent may comprise a polynuclear phenolic compound having the structure:

(2)

(Wherein Ar5 is an aromatic group substituted with at least one hydroxyl group, Ar6 is a moiety containing two or more glycidyl groups and a xanthene structure, and R1 is a hydrocarbon group having 1-6 carbon atoms)

The polynuclear phenol compound may be represented by the following Formula 2-1:

[Formula 2-1]

(Wherein Ar7 represents an aromatic group substituted with at least one hydroxyl group, Ar4 represents an arylene group having 6 to 12 carbon atoms, R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, An epoxy group or a glycidyl group, m1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)

The polynuclear phenol compound may be represented by any one of the following formulas (2a) to (2d):

In an embodiment, the epoxy resin composition may include 0.5 to 20% by weight of the epoxy resin, 0.1 to 13% by weight of the curing agent, and 70 to 95% by weight of the inorganic filler.

Another aspect of the present invention relates to a semiconductor device. The semiconductor device is sealed using the epoxy resin composition for sealing a semiconductor device.

In an embodiment, the semiconductor device may comprise a thin one side encapsulation package.

The present invention relates to an epoxy resin composition for sealing semiconductor devices and a method for producing the epoxy resin composition which can exhibit a high glass transition temperature and a low shrinkage property, effectively suppress the occurrence of package warpage, The semiconductor device of the present invention has the effect of providing the semiconductor device sealed with the insulating film.

Hereinafter, the constituent components of the epoxy resin composition according to the present invention will be described in detail.

Epoxy resin

The epoxy resin is characterized by containing a polynuclear epoxy resin represented by the following formula (1)

[Chemical Formula 1]

(Wherein Ar 1 is an aromatic group substituted with at least one glycidyl group, Ar 2 is a moiety containing at least two glycidyl groups and a xanthene structure, and R 1 is a hydrocarbon group having 1 to 6 carbon atoms)

In an embodiment, the polynuclear epoxy resin may be represented by the following Formula 1-1:

[Formula 1-1]

(Wherein Ar 3 represents an aromatic group substituted with at least one glycidyl group, Ar 4 represents an arylene group having 6 to 12 carbon atoms, R 2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms M1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)

In an embodiment, it may be represented by any one of the following formulas (1a) to (1d):

The polynuclear epoxy resin may be prepared by epoxidizing a polynuclear phenol compound having the structure of Formula 2:

(2)

(Wherein Ar5 is an aromatic group substituted with at least one hydroxyl group, Ar6 is a moiety containing two or more glycidyl groups and a xanthene structure, and R1 is a hydrocarbon group having 1-6 carbon atoms)

For example, the polynuclear phenol compound may be prepared by preparing a compound having a xanthene skeleton through a first-order condensation reaction between naphthalene having a hydroxyl group having a valence of 2 or more and Ar4, and then subjecting the compound to a second condensation reaction with Ar3. In addition, the polynuclear epoxy resin can be prepared by epoxidizing the polynuclear phenol compound through EF crohydrin.

In another embodiment of the present invention, another epoxy resin may be used in combination with the above-mentioned polynuclear epoxy resin. Examples thereof include epoxy resins obtained by epoxidation of condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol aralkyl type epoxy resins, phenol novolak type epoxy resins, cresol novolak type epoxy resins, multifunctional epoxy resins, naphthol Novolak type epoxy resins, novolak type epoxy resins such as bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybiphenyl type epoxy resins, dicyclopentadiene epoxy Resin, biphenyl-type epoxy resin, and the like. More specifically, the epoxy resin may be at least one of cresol novolak type epoxy resin, multifunctional epoxy resin, phenol aralkyl type epoxy resin, and biphenyl type epoxy resin together with the polynuclear epoxy resin. In this case, the polynuclear epoxy resin may be contained in an amount of 60 to 100% by weight, preferably 90 to 100% by weight, of the whole epoxy resin. And can have sufficient low shrinkage characteristics in the above range.

The epoxy resin may be contained in an amount of 0.5 to 20% by weight, specifically 3 to 15% by weight in the epoxy resin composition for sealing a semiconductor device. Within this range, sufficient curability can be ensured.

Hardener

In one embodiment, the curing agent is Curing agents generally used for sealing semiconductor devices can be used. Specifically, the curing agent may be a phenolic curing agent. For example, the phenolic curing agent may be a phenol aralkyl type phenol resin, a phenol novolac type phenol resin, a xylock type phenol resin, a cresol novolac type phenol resin, a naphthol type phenol resin, Terpene phenol resin, multifunctional phenol resin, dicyclopentadiene phenol resin, novolac phenol resin synthesized from bisphenol A and resole; Tris (hydroxyphenyl) methane, dihydroxybiphenyl, and the like.

In another embodiment, the curing agent may comprise a polynuclear phenolic compound having the structure:

(2)

(Wherein Ar5 is an aromatic group substituted with at least one hydroxyl group, Ar6 is a moiety containing two or more glycidyl groups and a xanthene structure, and R1 is a hydrocarbon group having 1-6 carbon atoms)

The polynuclear phenol compound may be represented by the following Formula 2-1:

[Formula 2-1]

(Wherein Ar7 represents an aromatic group substituted with at least one hydroxyl group, Ar4 represents an arylene group having 6 to 12 carbon atoms, R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, An epoxy group or a glycidyl group, m1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)

The polynuclear phenol compound may be represented by any one of the following formulas (2a) to (2d):

The curing agent may be used in combination with the polynuclear phenol compound and a conventional curing agent. In an embodiment, the curing agent may comprise from 0 to 40% by weight of the polynuclear phenolic compound and from 60 to 100% by weight of the multifunctional phenolic resin.

The curing agent may be contained in an amount of 0.1 to 13% by weight, preferably 0.1 to 10% by weight, more preferably 0.1 to 9% by weight in the epoxy resin composition for encapsulating semiconductor devices. Within this range, there is an effect that the curability of the composition is not lowered.

The blending ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be from 0.95 to 3, and may be specifically from 1 to 2, more specifically from 1 to 1.75. When the compounding ratio of the epoxy resin and the curing agent is in the above range, excellent strength can be realized after curing the epoxy resin composition.

Inorganic filler

The inorganic filler is intended to improve the mechanical properties and low stress of the epoxy resin composition. As the inorganic filler, general inorganic fillers used for the semiconductor element sealing material can be used without limitation, and are not particularly limited. Examples of the inorganic filler include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, . These may be used alone or in combination.

Preferably, fused silica having a low linear expansion coefficient is used for low stress. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials. Although the shape and the particle diameter of the fused silica are not particularly limited, the spherical fused silica having an average particle diameter of 5 to 30 탆 is contained in an amount of 50 to 99% by weight, the spherical fused silica having an average particle diameter of 0.001 to 1 탆 is contained in an amount of 1 to 50% To 40% by weight to 100% by weight with respect to the total filler. Further, the maximum particle diameter can be adjusted to any one of 45 탆, 55 탆 and 75 탆 according to the application. Since the spherical fused silica may contain conductive carbon as a foreign substance on the surface of the silica, it is also important to select a substance having a small amount of polar foreign substances.

The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In an embodiment, the inorganic filler may be included in the epoxy resin composition for encapsulating semiconductor devices in an amount of 70% by weight to 95% by weight, such as 75% by weight to 94% by weight or 75% by weight to 93% by weight. Within this range, there can be obtained an effect of securing the fluidity and reliability of the composition.

In addition to the above components, the epoxy resin composition according to the present invention may further include at least one of a curing accelerator, a coupling agent, a release agent, and a colorant.

Hardening accelerator

The curing accelerator is a substance that promotes the reaction between the epoxy resin and the curing agent. As the curing accelerator, for example, a tertiary amine, an organometallic compound, an organic phosphorus compound, an imidazole, and a boron compound can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt.

Specific examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine Pin-1,4-benzoquinone adducts and the like. Imidazoles include, but are not limited to, 2-phenyl-4 methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, -Methylimidazole, 2-heptadecylimidazole, and the like, but the present invention is not limited thereto. Specific examples of the boron compound include tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoro Triethylamine, tetrafluoroborane amine, and the like. In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. Diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolac resin salt. However, the present invention is not limited thereto.

More specifically, organic phosphorus compounds, boron compounds, amine-based or imidazole-based curing accelerators may be used alone or in combination as the curing accelerator. As the curing accelerator, it is also possible to use an adduct made by reacting with an epoxy resin or a curing agent.

The curing accelerator may be 0.01% by weight to 2% by weight, specifically 0.02% by weight to 1.5% by weight, more specifically 0.05% by weight to 1% by weight in the epoxy resin composition for encapsulating semiconductor devices. It may be advantageous that the curing of the epoxy resin composition is accelerated within the above-mentioned range and the curing degree is also good.

Coupling agent

The coupling agent is for improving the interface strength by reacting between the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. The silane coupling agent is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interface strength between the epoxy resin and the inorganic filler. Specific examples of the silane coupling agent include epoxy silane, aminosilane, ureidosilane, mercaptosilane, and alkylsilane. The coupling agent may be used alone or in combination.

The coupling agent may be contained in an amount of 0.01 to 5 wt%, preferably 0.05 to 3 wt%, and more preferably 0.1 to 2 wt% in the epoxy resin composition for encapsulating semiconductor devices. The strength of the cured product of the epoxy resin composition in the above range can be improved.

Release agent

As the releasing agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used.

The release agent may be contained in an amount of 0.1 wt% to 1 wt% in the epoxy resin composition for sealing a semiconductor device.

coloring agent

The coloring agent is for laser marking of the semiconductor element sealing material, and coloring agents well known in the art can be used and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, dicopper hydroxide phosphate, iron oxide, mica.

The colorant may be contained in an amount of 0.01 to 5 wt%, preferably 0.05 to 3 wt%, and more preferably 0.1 to 2 wt% in the epoxy resin composition for encapsulating semiconductor devices.

In addition, the epoxy resin composition of the present invention may contain a stress-relieving agent such as a modified silicone oil, a silicone powder, and a silicone resin to the extent that the object of the present invention is not impaired; Antioxidants such as Tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane; A flame retardant such as aluminum hydroxide, and the like may be further added as needed.

Another aspect of the present invention relates to a semiconductor device. The semiconductor device is sealed using the epoxy resin composition for sealing a semiconductor device.

In an embodiment, the semiconductor device may comprise a thin one side encapsulation package.

The epoxy resin composition is prepared by sufficiently mixing the above components uniformly at a predetermined mixing ratio using a Hensel mixer or a Lodige mixer and then melt-kneading the mixture with a roll mill or a kneader Followed by cooling and grinding to obtain a final powder product.

A transfer molding method can generally be used as a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention. However, it is also possible to perform molding by an injection molding method or a casting method. The epoxy resin composition of the present invention as described above can be usefully applied to semiconductor devices, particularly semiconductor devices requiring low shrinkage characteristics. And can be usefully used in a semiconductor package having a one-side sealing structure.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

Example

Specific specifications of the components used in the following examples and comparative examples are as follows.

(A) an epoxy resin

(a1) A compound having a xanthene skeleton is prepared through a first-order condensation reaction of 2,7-dihydroxynaphthalene and o-anisalddehyde using sulfuric acid, followed by a second condensation reaction with phenol and formalin to prepare a polynuclear phenol compound Respectively. An epoxy resin having the following formula (1a) was prepared by epoxidizing the obtained phenol compound through f-clochedrin.

(a2) A compound having a xanthene skeleton is prepared through a first-order condensation reaction of 2,7-dihydroxynaphthalene and o-anisalddehyde using sulfuric acid, followed by a second condensation reaction with 1-naphthol and formalin, Compound. An epoxy resin having the following formula (1b) structure prepared by epoxidizing the phenol compound thus obtained through f-clochedrin was used.

(a3) A compound having a xanthene skeleton is prepared through a first-order condensation reaction of 2,7-dihydroxynaphthalene with 3,4-dimethoxybenzaldehyde using sulfuric acid, followed by a second condensation reaction with phenol and formalin Polynuclear phenol compounds were prepared. An epoxy resin having the following formula (1c) structure prepared by epoxidizing the phenol compound thus obtained through the use of fructohydrin was used.

(a4) A compound having a xanthene skeleton is prepared through a first-order condensation reaction of 2,7-dihydroxynaphthalene and 3,4-dimethoxybenzaldehyde using sulfuric acid. Then, 1-naphthol and formalin are added thereto, To prepare a polynuclear phenol compound. An epoxy resin having a structure of the following formula (1d) prepared by epoxidizing the phenol compound thus obtained through fc clohdrin was used.

(a5) A compound having a xanthene skeleton is prepared through a first-order condensation reaction of 2,7-dihydroxynaphthalene with 3,4-dimethoxybenzaldehyde using sulfuric acid, followed by epoxidation through epichlorohydrin An epoxy resin having the following formula (1e) structure was used.

(a6) HP-4770 (DIC corporation) was used.

(B) Hardener: MEH-7500-3S (Meiwa), a multifunctional phenol resin, was used.

(C) Inorganic filler: A 9: 1 (weight ratio) mixture of spherical fused silica having an average particle diameter of 18 탆 and spherical fused silica having an average particle diameter of 0.5 탆 was used.

(D) Curing accelerator: Triphenylphosphine (Hoko Chemical) was used.

(E) Coupling agent: SZ-6070 (Dow Corning Chemical), methyltrimethoxysilane, was used.

(F) Colorant: Carbon black MA-600 (Matsushita Chemical) was used.

(G) Release agent: Carnauba wax was used.

Examples and Comparative Examples

Each of the above components was weighed according to the composition (unit: wt%) shown in the following Table 1, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. Thereafter, the mixture was melt-kneaded at 90 to 110 ° C using a continuous kneader, followed by cooling and pulverization, thereby preparing an epoxy resin composition for sealing semiconductor devices.

Example Comparative Example One 2 3 4 One 2 (A) an epoxy resin (a1) 11.7 - - - - - (a2) - 11.7 - - - - (a3) - - 11.7 - - - (a4) - - - 11.7 - - (a5) - - - - 11.7 - (a6) - - - - - 11.7 (B) Curing agent 6.6 6.6 6.6 6.6 6.6 6.6 (C) Inorganic filler 80 80 80 80 80 80 (D) Curing accelerator 0.6 0.6 0.6 0.6 0.6 0.6 (E) Coupling agent 0.5 0.5 0.5 0.5 0.5 0.5 (F) Colorant 0.3 0.3 0.3 0.3 0.3 0.3 (G) Releasing agent 0.3 0.3 0.3 0.3 0.3 0.3

The physical properties of the epoxy resin compositions of the examples and comparative examples thus prepared were measured according to the following properties evaluation methods. The measurement results are shown in Table 2.

Property evaluation method

(1) Flowability (inch): An epoxy resin composition was injected into a mold for spiral flow measurement according to EMMI-1-66 at a molding temperature of 175 캜 and a molding pressure of 70 kgf / cm ² using a low pressure transfer molding machine, (Length of idle motion) (unit: inch) was measured. The higher the measured value, the better the fluidity.

(2) Curing Shrinkage (%): Flexural Strength A specimen (125 mm × 12.6 mm × 6.4 mm) was molded using an ASTM mold at 175 ° C. and 70 kgf / cm ² using a transfer molding press . The obtained specimens were post-cured (PMC) in an oven at 170 ° C to 180 ° C for 4 hours, cooled, and then the length of the specimens was measured with a caliper. The hardening shrinkage ratio was calculated from Equation 1 as follows.

[Formula 1]

Cure shrinkage (%) = A - B | / A × 100

A is the length of the mold at 175 DEG C, and B is the length of the specimen obtained after curing the specimen at 170 DEG C to 180 DEG C for 4 hours and cooling the specimen.

(3) 25 ° C modulus (GPa): The epoxy resin composition was cured at a mold temperature of 175 ° C ± 5 ° C, an injection pressure of 1000 psi ± 200psi and a curing time of 120 seconds using a transfer molding machine to prepare a specimen (20 mm × 13 mm × 1.6 mm ). The specimens were post-cured for 2 hours in a hot air drier at 175 ° C ± 5 ° C and then measured with a dynamic mechanical analyzer (DMA) using Q8000 (TA). In the measurement of the modulus, the temperature raising rate was increased from -10 ° C to 300 ° C at a rate of 5 ° C / minute, and the value at 25 ° C was determined by a modulus.

(4) 260 ° C Modulus (MPa): The epoxy resin composition was cured at a mold temperature of 175 ° C ± 5 ° C, an injection pressure of 1000 psi ± 200 psi and a curing time of 120 seconds using a transfer molding machine to prepare a specimen (20 mm × 13 mm × 1.6 mm ). The specimens were post-cured for 2 hours in a hot air drier at 175 ° C ± 5 ° C and then measured with a dynamic mechanical analyzer (DMA) using Q8000 (TA). In the measurement of the modulus, the temperature raising rate was increased from -10 ° C to 300 ° C at a rate of 5 ° C / minute, and the value at 260 ° C was obtained as a storage modulus.

(5) Glass transition temperature (占 폚): Measured using a thermomechanical analyzer (TMA). At this time, the TMA was set to a condition of measuring up to 300 DEG C by raising the temperature by 10 DEG C per minute at 25 DEG C. [

Evaluation items Example Comparative Example One 2 3 4 5 6 Flowability (inch) 68 69 67 70 60 61 Cure shrinkage (%) 0.09 0.08 0.09 0.08 0.13 0.35 25 ° C Elastic modulus (GPa) 14.6 14.0 15.4 15.3 14.6 17.6 260 ° C Elastic modulus (MPa) 801 882 768 789 654 1297 Glass transition temperature (캜) 190 191 188 189 182 140

As shown in Table 2, the epoxy resin composition of the present invention has excellent fluidity, low curing shrinkage, low elastic modulus and high glass transition temperature.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (13)

Epoxy resin; Curing agent; And an inorganic filler,
Wherein the epoxy resin comprises a polycyclic epoxy resin represented by the following formula (1): < EMI ID =
[Chemical Formula 1]

(Wherein Ar 1 is an aromatic group substituted with at least one glycidyl group, Ar 2 is a moiety containing at least two glycidyl groups and a xanthene structure, and R 1 is a hydrocarbon group having 1 to 6 carbon atoms) .
The epoxy resin composition according to claim 1, wherein the polynuclear epoxy resin is represented by the following formula (1-1):
[Formula 1-1]

(Wherein Ar 3 represents an aromatic group substituted with at least one glycidyl group, Ar 4 represents an arylene group having 6 to 12 carbon atoms, R 2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms M1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)
The epoxy resin composition for sealing a semiconductor element according to claim 1, wherein the polynuclear epoxy resin is represented by any one of the following formulas (1a) to (1d):

The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the polynuclear epoxy resin is contained in an amount of 60 to 100% by weight of the whole epoxy resin.
The curing agent according to claim 1, wherein the curing agent is selected from the group consisting of a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a xylock type phenol resin, a cresol novolac type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, A chloropentadiene-based phenol resin, a novolak-type phenol resin synthesized from bisphenol A and resole; Tris (hydroxyphenyl) methane, and dihydroxybiphenyl. The epoxy resin composition for sealing a semiconductor device according to claim 1,
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the curing agent comprises a polynuclear phenol compound having a structure represented by the following formula
[Formula 2-1]

(Wherein Ar7 represents an aromatic group substituted with at least one hydroxyl group, Ar4 represents an arylene group having 6 to 12 carbon atoms, R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, An epoxy group or a glycidyl group, m1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)
7. The epoxy resin composition for sealing a semiconductor device according to claim 6, wherein the polynuclear phenol compound is represented by the following Formula 2-1:
[Formula 2-1]

(Wherein Ar7 represents an aromatic group substituted with at least one hydroxyl group, Ar4 represents an arylene group having 6 to 12 carbon atoms, R2 represents hydrogen, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 30 carbon atoms, An epoxy group or a glycidyl group, m1 and m2 are each independently a natural number of 1 to 3, m3 is independently a natural number of 1 to 5, and n is a natural number of 1 to 6.)
7. The epoxy resin composition for sealing a semiconductor element according to claim 6, wherein the polynuclear phenol compound is represented by any one of the following formulas (2a) to (2d):

The epoxy resin composition according to claim 1,
0.5 to 20% by weight of the epoxy resin,
0.1 to 13% by weight of the curing agent,
And 70 to 95% by weight of the inorganic filler.
According to claim 1, wherein the epoxy resin composition, to and the curing shrinkage ratio in the equation 1 of less than 0.1%, and a modulus at 260 ℃ 750 ~ 1000 MPa after curing, a transfer molding press at 175 ℃, 70kgf / cm ² to ( wherein the flow length measured by a transfer molding press is 65 to 75 inches.
[Formula 1]
Cure shrinkage ratio = | A - B | / A x 100
In the above formula (1), A represents the length of the specimen obtained by transfer molding press at 175kgf / cm < ² > of the epoxy resin composition, B represents the specimen obtained after curing the specimen at 170 DEG C to 180 DEG C for 4 hours, Lt; / RTI >
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the epoxy resin composition has a glass transition temperature of 185 DEG C or higher after curing.
A semiconductor device sealed using the epoxy resin composition for sealing a semiconductor element according to any one of claims 1 to 11.
13. The semiconductor device according to claim 12, wherein the semiconductor device includes a thin one-side sealing package.