KR20190079471A - Sputter film deposition device and sputter film deposition method - Google Patents

Abstract

The present invention provides a sputter film forming device and a sputter film forming method which can form a deposition film of a two-layer structure without distributing different chambers to improve production efficiency. A pair of target units are arranged in parallel with each other and separated from each other in a relative moving direction with respect to a substrate to be processed to prevent scattering areas of target particles from targets from being overlapped. The pair of target units are integrated to move simultaneously. A film of a second layer is deposited by a target unit positioned behind on a film of a first layer formed on the substrate to be processed by a target unit positioned on a front side in the relative moving direction.

Description

TECHNICAL FIELD [0001] The present invention relates to a sputter deposition apparatus, a sputter deposition apparatus, and a sputter deposition apparatus.

More particularly, the present invention relates to a sputtering apparatus of a magnetron type in which a magnet is disposed inside a target and a loop-shaped magnetic flux is formed in the vicinity of the target surface to capture electrons and concentrate the plasma, ≪ / RTI >

As a conventional sputtering film forming apparatus of this kind, for example, there is known one described in Patent Document 1.

That is, a pair of rotating cathodes (target units) arranged opposite to the substrate (substrate to be processed) are provided, and a sputtering power source for supplying sputtering power to each rotating cathode. The rotating cathode includes a cylindrical base member, a cylindrical target covering the outer periphery of the base member, and a magnet unit disposed inside the base member and forming a magnetic field on the surface of the target.

A pair of rotating cathodes are disposed in a processing space opposite to each other with a predetermined distance therebetween. A power is supplied from a sputter power source to generate a plasma in the vicinity of the surface of the target, and from the target of the two rotating cathodes, The sputter particles are scattered toward the film formation portion on the conveyance path of the substrate, and the substrate is moved so as to pass the substrate along the conveying surface a plurality of times of the conveyed film forming portions, thereby forming the film on the substrate surface.

Japanese Patent Application Laid-Open No. 2017-066427

However, in the sputtering film forming apparatus of Patent Document 1, the same material is formed on a substrate by using two rotating cathodes. In the case of forming a laminated film of different materials, in a different chamber for each film forming material, It is necessary to form a film by using the film, and the production efficiency is not good.

An object of the present invention is to provide a sputtering film forming apparatus and a film forming method which can form a laminated film having a two-layer structure without distributing the other chambers, thereby increasing production efficiency.

In order to achieve the above object,

A chamber,

And a pair of target units disposed in the chamber so as to be movable relative to the target substrate,

The target unit includes a target, an electrode member to which electric power is supplied from a power source, and a magnet that forms a magnetic field on a surface of the target opposite to the target substrate,

A sputtering apparatus for sputtering a target substrate,

The pair of target units are arranged in parallel with a predetermined interval in a relative movement direction with respect to the substrate to be processed so that the scattering regions of the target particles from the respective targets do not overlap,

Wherein the pair of target units move together and simultaneously move on a film of the first layer formed on the substrate to be processed by the target unit positioned at the head side in the relative movement direction by a target unit positioned rearward And a film of the second layer is laminated.

According to another aspect of the present invention,

And a pair of target units disposed in the chamber so as to be movable relative to the target substrate,

The target unit includes a target, an electrode member to which electric power is supplied from a power source, and a magnet that forms a magnetic field on a surface of the target opposite to the target substrate,

A target substrate, and a target substrate,

Wherein the pair of target units move together and simultaneously move on a film of the first layer formed on the substrate to be processed by the target unit positioned at the head side in the relative movement direction by a target unit positioned rearward And a film of the second layer is laminated,

Wherein the power source is a bipolar power source and a waveform of an opposite polarity is outputted to the electrode members of the pair of target units and the duty ratio is controlled to independently control the film thicknesses of the first layer and the second layer do.

According to the present invention, the two-layer laminated film can be formed without distributing the other chambers, thereby improving the production efficiency.

FIG. 1 (A) is a schematic view of a sputtering film forming apparatus according to an embodiment of the present invention, and FIG. 1 (B) is a view showing a voltage application state.
Fig. 2 (A) is a perspective view of the magnet, and Fig. 2 (B) is a diagram showing an example of the arrangement of magnets.
3 (A) to 3 (C) are diagrams showing examples of arrangement of different magnets.
4 is an explanatory diagram of voltage control of the power source.
FIG. 5A is a perspective view showing an overall configuration example of FIG. 1A, and FIG. 5B is a front view.
Fig. 6 (A) is a top view of the apparatus of Fig. 5 (A), and Fig. 6 (B) is a side view.
7 is a diagram showing a general configuration of an organic EL panel.

Hereinafter, the present invention will be described in detail based on embodiments of the present invention. However, the following embodiments are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to such configurations. In addition, the manufacturing conditions, dimensions, materials, shapes, and the like in the following description are not intended to limit the scope of the present invention to such a bar as long as no specific description is given.

First, a basic configuration of the sputtering film forming apparatus of the present invention will be described with reference to Fig. 1 (A).

This sputtering film forming apparatus 1 is used, for example, in the production of an organic EL panel. In the case of an organic EL panel, as shown in Fig. 7, a structure is generally formed in the order of an anode, a hole injecting layer, a hole transporting layer, an organic light emitting layer (organic film), an electron transporting layer, an electron injecting layer and a cathode. In this embodiment, a laminated film such as a metal or an oxide used for the electron injecting layer and the electrode is formed on the organic film by sputtering. In addition, the present invention is not limited to film formation on an organic film, and lamination film formation on various surfaces is possible if it is a combination of materials that can be formed by sputtering such as a metal material or an oxide material.

The sputter deposition apparatus 1 includes a vacuum chamber 10 to which an inert gas such as argon is supplied and a pair of rotary target units 20A to 20d arranged opposite to the target substrate 5 to be supplied into the vacuum chamber 10. [ And 20B.

Each of the rotary target units 20A and 20B includes a cylindrical rotary target 21, a cylindrical cathode 22 to which electric power is supplied from the power source 40, And a magnet unit (30) for forming a magnetic field on the surface opposite to the magnet unit (5).

The pair of rotating target units 20A and 20B are moved relative to the target substrate 5 by moving the rotating target units 20A and 20B in a state where the target substrate 5 is stopped , And the target particles are formed on the substrate 5 to be processed. The pair of rotating target units 20A and 20B are arranged in parallel with a predetermined interval in the relative moving direction with respect to the substrate 5 so as not to overlap the scattering regions Ta and Tb of the target particles, So that they move integrally and simultaneously. On the film 5a of the first layer formed on the substrate 5 to be processed by the rotating target unit 20A located at the head side in the moving direction of the rotating target units 20A and 20B, The film 5b of the second layer is laminated by the rotating target unit 20B. The lamination film formation by the relative movement of the rotary target units 20A, 20B on the substrate 5 to be processed is performed in one scanning stroke.

Hereinafter, the configuration of each part will be described in detail with reference to Fig. 2 (A), Fig. 5, and Fig.

FIG. 5A is a perspective view showing an internal structure, FIG. 6B is a front sectional view, FIG. 6A is a top view, and FIG.

A pair of guide rails 11 for guiding the rotary target units 20A and 20B are arranged in parallel in the horizontal direction on the lower side of the vacuum chamber 10. The rotary target units 20A, And is driven and conveyed in the horizontal direction from the upstream side to the downstream side. The conveying surface is supported by the guide rail 11 in a horizontal plane maintain.

Hereinafter, when the direction parallel to the guide rails 11 is the Y axis, the vertical direction is the Z axis, and the direction orthogonal to the guide rails 11 in the horizontal plane is the X axis, the carrying surface is the XY plane.

The rotary target units 20A and 20B are arranged such that the rotary shafts of the rotary targets 21 are parallel to each other with a predetermined gap therebetween in the Y axis direction.

The drive mechanism of the end block 12 may be a linear motor or a variety of drive mechanisms such as a mechanism using a ball screw or the like for converting the rotational motion of the rotary motor into a linear motion.

On the other hand, the substrate 5 to be processed is arranged on the ceiling side of the vacuum chamber 10 parallel to the conveying surface of the rotary target, that is, horizontally, and both side edges along the conveying direction are supported by the substrate holder 55 .

The substrate 5 to be processed is transported, for example, from an entrance gate (not shown) provided on the side wall of the vacuum chamber 10, moved to a film formation position, stopped during film formation, .

Arrangement of magnet unit

The magnet unit 30 includes a center magnet 31 extending in a direction orthogonal to the moving direction of the rotary target units 20A and 20B, a peripheral magnet 32 surrounding the center magnet 31, (33). As shown in Fig. 2A, the peripheral magnet 32 includes a pair of linear portions 32a and 32b extending in parallel with the center magnet 31, and a pair of linear portions 32a and 32b extending in parallel to the center magnet 31, And rotation parts 32c and 32c to be connected.

It is necessary that the pair of rotating target units 20A and 20B be set so that the scattering regions of the target particles do not overlap on the film formation surface of the substrate 5 to be treated so that the target particles do not mix.

2 (B), in one of the magnet unit 30 of the rotary target units 20A and 20B, the center magnet 31 of the peripheral magnet 32 The magnetization direction of the opposing linear target portions 32a and 32a is set to be the same as the magnetization direction of the processing target Is inclined to the opposite side of the other target unit side with respect to the vertical plane (V) orthogonal to the film formation plane of the substrate (5).

In the illustrated example, the linear portion 32b is linearly stood up from the yoke plate 33, and along the side surface thereof, the reference line Ua, Ua indicating the magnetization direction is formed. The magnetization direction is the direction of the magnetic flux passing through the linear portion 32b. Ub). The reference lines Ua and Ub are inclined toward the film formation surface of the substrate 5 to be widened.

In the illustrated example, the pair of rectilinear sections 32a and 32b and the center magnet 31 stand parallel to each other in a direction orthogonal to the yoke plate 33, and the rising direction of the center magnet 31 Is inclined toward the film formation surface of the target substrate 5 in a widening direction with respect to a vertical plane V orthogonal to the film formation side of the target substrate 5. [ Further, the center magnet 31 is disposed on a plane passing through the rotation center line.

The magnetic field in the vicinity of the surface of the rotary target 20 has a magnetic line of force that returns from the magnetic pole of the center magnet 31 toward the straight portions 32a and 32a of the peripheral magnet 32 in a loop shape, Electrons are trapped and the plasma is concentrated in the vicinity of the surface of the rotary target 20, whereby the efficiency of sputtering can be increased.

1 (A), a loop of an ellipse described near the surface of the rotary target 20 schematically shows a portion where the plasma L is concentrated, and a loop in the normal direction of the surface of the rotary target 20 The sputter particles are scattered intensively from the point where the density component is zero and the scattering region is on the film forming surface of the substrate 5 to be widened in the conveying direction. However, by tilting the magnet unit 30, Even if the intervals between the scattering regions 20A and 20B are short, the scattering regions Ta and Tb can be separated from each other at the position of the deposition surface.

1 (A), the shielding member 50 may be disposed as shown by the broken line in order to limit the scattering range of the target particles. In the illustrated example, the film is disposed between the scattering regions Ta and Tb in the direction orthogonal to the film formation surface. The position of the lower end of the shielding member 50 may extend between the rotary target units 20A and 20B as shown in Fig. 5B.

In the configuration example of these rotary target units 20A and 20B, although the magnet units of both the pair of rotary target units 20A and 20B are inclined, only one of them is tilted and the other is vertical There may be.

3 (A), the rectilinear section 32b is not inclined at right angles to the yoke plate 33, but inclined in the direction tilting in the height direction from the yoke plate 33 There may be. 3B and 3C, the inclination angle of the linear portion 32b is set so that the direction perpendicular to the film forming surface of the substrate 5 to be processed and the direction of the surface of the substrate 5 to be processed That is, between 90 ° and 0 ° between the parallel directions with respect to the film formation surface. That is, in order to prevent the scattering regions of the target particles from the rotary target units 20A and 20B from overlapping on the film formation surface of the substrate 5 to be processed It is good to leave.

The magnetic pole units 40 of the rotary target units 20A and 20B may be arranged so as to be spaced apart from each other as shown in Figs.3B and 3B as far as they can be separated sufficiently so that the scattering regions of the target particles from the rotary target units 20A and 20B do not overlap. Likewise, the magnetization direction of the linear portion of the peripheral magnetic pole may be orthogonal to the film formation surface of the substrate 5 to be processed.

Next, the power supply control of the sputtering film deposition apparatus will be described with reference to Fig.

The power source 40 is a bipolar power source and outputs a waveform having an opposite polarity to the cathodes 22 and 22 of the pair of rotating target units 20A and 20B as shown in Fig. So that the film thicknesses of the first layer and the second layer can be controlled independently of each other.

That is, the bipolar power supply 40 outputs a waveform whose polarity is opposite at the output A and the output B. FIG. 4A shows the voltage applied to the output A, and FIG. 4B shows the voltage applied to the output B. FIG. The output A and the output B have the same cycle, and when the output A is in a period of positive t1 and the interval of t2 is negative, the output B is in a relationship in which the interval between t1 is minus and the interval between t2 is plus. Fig. 1B is a view showing the combination of the output A and the output B. Fig.

The duty ratio is variable. In the present embodiment, the duty ratio can be controlled within a range of about 5 to 95%. The frequency is variable in the range of several hundreds Hz to several tens of kHz, in this embodiment, in the range of 500 Hz-50 kHz.

Assuming a negative duty ratio, the duty ratio of the output A is t2 / (t1 + t2) = t1 / T, and the duty ratio of the output B is t1 / t1 + t2) = t1 / T.

Therefore, by controlling the duty ratio, the relative ratio of the film thicknesses of the first layer and the second layer can be determined, and one of them can be made thicker, the other can be made thinner, or equivalently set.

In addition, since positive voltage can be applied to the other cathode while minus is applied to one of the cathodes, positive charge (positive ions) on the target surface is excluded and arc is suppressed.

In addition, the case where the power source is a bipolar power source has been described. However, a separate DC power source may be provided for each of the pair of rotating target units 20A, 20B.

In the above-described embodiment, the target has been described as a target to which the target is rotationally driven. However, the present invention is also applicable to a flat target, not to a rotating target.

1: Sputter deposition apparatus
5: substrate to be processed
5a: Membrane (first layer)
5b: film (second layer)
10: Vacuum chamber
20A: rotating target unit
20B: Rotating target unit
21: Rotational target
30: magnet unit
31: center magnet
32: Peripheral magnet
32a:
32b:
32c:
40: Power supply

Claims (9)

A chamber,
And a pair of target units disposed in the chamber so as to be movable relative to the target substrate,
The target unit includes a target, an electrode member to which electric power is supplied from a power source, and a magnet that forms a magnetic field on a surface of the target opposite to the target substrate,
A sputtering apparatus for sputtering a target substrate,
The pair of target units are arranged in parallel with a predetermined interval in a relative movement direction with respect to the substrate to be processed so that the scattering regions of the target particles from the respective targets do not overlap,
Wherein the pair of target units move together and simultaneously move on a film of the first layer formed on the substrate to be processed by the target unit positioned at the head side in the relative movement direction by a target unit positioned rearward And the second layer is laminated on the second layer. The method according to claim 1,
The magnet includes a center magnet extending in a direction perpendicular to the relative moving direction and a peripheral magnet surrounding the center magnet,
The magnetization direction of the other side of the target unit side with respect to the center magnet of the peripheral magnet in the magnet of at least one target unit is opposite to the side of the other target unit in the direction perpendicular to the film formation surface of the substrate to be processed Tilt, sputter deposition apparatus. 3. The method according to claim 1 or 2,
Wherein the power source is a bipolar power source capable of applying voltages of opposite polarities to the pair of target units so that an applied voltage time to the pair of target units can be controlled. 4. The method according to any one of claims 1 to 3,
Wherein the lamination film formation by the relative movement of the pair of target units to the substrate to be processed is performed in one scanning stroke. 5. The method according to any one of claims 1 to 4,
Wherein a shielding member for shielding the sputter particles is provided between the pair of target units. 6. The method according to any one of claims 1 to 5,
Wherein the substrate to be processed forms an electrode of an EL device. 7. The method according to any one of claims 1 to 6,
Wherein the target is a cylindrical member rotationally driven. 7. The method according to any one of claims 1 to 6,
Wherein the target is a flat plate member. And a pair of target units disposed in the chamber so as to be movable relative to the target substrate,
The target unit includes a target, an electrode member to which electric power is supplied from a power source, and a magnet that forms a magnetic field on a surface of the target opposite to the target substrate,
A target substrate, and a target substrate,
Wherein the pair of target units move together and simultaneously move on a film of the first layer formed on the substrate to be processed by the target unit positioned at the head side in the relative movement direction by a target unit positioned rearward And a film of the second layer is laminated,
Wherein the power source is a bipolar power source and a waveform of an opposite polarity is outputted to the electrode members of the pair of target units and the duty ratio is controlled to independently control the film thicknesses of the first layer and the second layer .

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