KR20190055658A - Epoxy resin composition for encapsulating semiconductor device and semiconductor device prepared using the same - Google Patents

Abstract

The present invention relates to an epoxy resin composition for encapsulating a semiconductor device containing an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a (meth)acrylate-based compound. Specifically, provided are the epoxy resin composition for encapsulating the semiconductor device, in which 0.1 to 2 wt% of the (meth)acrylate compound is contained among the epoxy resin composition for encapsulating the semiconductor device; and the semiconductor device manufactured by using the same. The present invention provides the epoxy resin composition for encapsulating the semiconductor device that can improve rigidity and reliability of a semiconductor package.

Description

EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PREPARED USING THE SAME Technical Field [1] The present invention relates to an epoxy resin composition for semiconductor device encapsulation,

The present invention relates to an epoxy resin composition for sealing semiconductor devices and a semiconductor device manufactured using the same. More particularly, the present invention relates to an epoxy resin composition for semiconductor device encapsulation, which comprises a (meth) acrylic compound in an epoxy resin composition for encapsulating a semiconductor device to improve toughness, improve reliability of a semiconductor package, And a semiconductor device manufactured using the epoxy resin composition.

BACKGROUND ART As a method of packaging a semiconductor device such as IC and LSI and obtaining a semiconductor device, transfer molding using an epoxy resin composition is widely used because of its low cost and suitable for mass production. The epoxy resin composition for semiconductor encapsulation generally comprises an epoxy resin, a curing agent, an inorganic filler, and the like.

However, due to the miniaturization, light weight, and high performance of electronic products, semiconductor chips have become thinner, higher integration and / or surface mounting have increased, which can not be solved by conventional epoxy resin compositions. Particularly, when the toughness of the epoxy resin composition is low, the reliability of the semiconductor package can be lowered.

There has been a method of increasing rigidity by adjusting the content of conventional inorganic filler. However, when the content of the inorganic filler is controlled, there is a problem that the moisture absorption rate is increased.

An object of the present invention is to provide an epoxy resin composition for semiconductor device encapsulation which can increase the rigidity of a semiconductor package.

Another object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device which can increase the reliability of a semiconductor package.

It is still another object of the present invention to provide a semiconductor device which is sealed by using the epoxy resin composition.

The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and a (meth) acrylate-based compound, wherein the (meth) acrylate- To 0.1% by weight to 2% by weight.

The semiconductor device of the present invention may be sealed using the epoxy resin composition of the present invention.

The present invention provides an epoxy resin composition for semiconductor device encapsulation which can enhance the rigidity of a semiconductor package.

The present invention provides an epoxy resin composition for semiconductor device encapsulation capable of enhancing the reliability of a semiconductor package.

The present invention provides a semiconductor device sealed with the above epoxy resin composition.

1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.
2 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.

As used herein, the term " (meth) acrylate-based " means acrylate-based and / or methacrylate-based.

The inventor of the present invention has found that the toughness can be increased and the reliability of the semiconductor package can be increased and the fluidity can be increased by including the curable (meth) acrylate compound in the composition at 0.1 wt% to 2 wt% .

The epoxy resin composition for semiconductor device encapsulation according to the present invention comprises an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and a (meth) acrylate-based compound, wherein the (meth) acrylate- To 0.1% by weight to 2% by weight. Within the above range, it is possible to increase rigidity and increase the reliability of the semiconductor package, and prevent the deterioration of the fluidity of the composition. Preferably 0.1 By weight to 1% by weight.

Hereinafter, each component of the epoxy resin composition of the present invention will be described in detail.

Epoxy resin

Examples of the epoxy resin include bisphenol-type epoxy resins such as biphenyl-type epoxy resins, multifunctional epoxy resins, biphenyl novolak type epoxy resins, bisphenol A type epoxy resins and bisphenol F type epoxy resins, phenol novolak type epoxy resins, Catechol type epoxy resin, naphthalene type epoxy resin, glycidylamine type epoxy resin, phenol aralkyl type epoxy resin, cresol novolak type epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, Resin, cyclohexanedimethanol type epoxy resin, halogenated epoxy resin, and the like. These may be included singly or in combination of two or more.

In one embodiment, the epoxy resin may be at least one of a biphenyl-type epoxy resin, a multifunctional epoxy resin,

(2)

(Wherein R is an alkyl group having 1 to 4 carbon atoms, and n has an average value of 0 to 7).

The epoxy resin may be contained in an amount of 0.5 to 20% by weight, preferably 3 to 15% by weight based on the solid content of the epoxy resin composition. Within this range, the curability of the composition may not be deteriorated.

The epoxy resin may be used alone or as an additive compound prepared by a linear reaction such as a curing agent, a curing accelerator, a releasing agent, a coupling agent, an additive such as a stress relaxation agent, and a melt master batch.

Hardener

The curing agent may be selected from cresol novolak type phenol resins including novolak type phenol resins, phenol aralkyl type phenol resins, phenol novolac type phenol resins, xylock type phenol resins and orthocresol novolac type phenol resins, naphthol type phenol resins, (Phenoxy resin), a polyhydric phenol resin, a dicyclopentadiene phenol resin, a novolak phenol resin synthesized from bisphenol A and resole, a polyhydric phenol compound including tris (hydroxyphenyl) methane, dihydroxybiphenyl, Acid anhydrides including maleic anhydride and phthalic anhydride, aromatic amines such as meta-phenylenediamine, diaminodiphenylmethane and diaminodiphenylsulfone, and the like. The curing agent may be a phenol resin having at least one hydroxyl group.

In one embodiment, the curing agent may comprise at least one of a multifunctional phenolic resin of formula (3), an orthocresol novolac phenolic resin.

(3)

(The average value of n in the above formula (3) is 1 to 7).

The curing agent may be contained in an amount of 0.1 to 13% by weight, preferably 0.1 to 10% by weight based on the solid content of the epoxy resin composition. Within this range, the curability of the composition may not be deteriorated.

The curing agent may be used singly or as an additive compound prepared by subjecting an additive such as an epoxy resin, a curing accelerator, a releasing agent, a coupling agent, and a stress relieving agent to a linear reaction such as a melt master batch.

Hardening accelerator

As the curing accelerator, tertiary amines, organometallic compounds, organic phosphorus compounds, imidazole compounds, and boron compounds can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris ) Phenol and tri-2-ethylhexyl acid salt. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like. Organic phosphorus compounds include tris (4-methoxyphenyl) phosphine, triphenylphosphine, triphenylborane, triphenylphosphine-1,4-benzoquinone adducts and the like. Imidazole compounds include 2-phenyl-4-methyl-5-hydroxymethyl imidazole, 2-methylimidazole, 2-phenyl imidazole, 2-amino-imidazole, 2-methyl-1-vinyl imidazole 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like. Examples of the boron compound include triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborantriethylamine, tetrafluoroboraneamine, and the like . In addition, 1,5-diazabicyclo [4.3.0] non-5-ene (1,5-diazabicyclo [4.3.0] non-5-ene: DBN), 1,8-diazabicyclo [5.4. 1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts. As the curing accelerator, it is also possible to use an adduct prepared by turning the epoxy resin or the curing agent.

The curing accelerator may be included in the solid base composition in an amount of 0.01 to 10 wt%, for example, 0.01 to 5 wt%. Within this range, the curing reaction time is not delayed and the fluidity of the composition can be ensured.

Inorganic filler

The inorganic filler can improve mechanical properties and low stress of the composition. Examples of inorganic fillers may include one or more of fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, have.

Preferably, fused silica having a low linear expansion coefficient is used for low stress. The fused silica refers to amorphous silica having a true specific gravity of 2.3 or less and includes amorphous silica obtained by melting crystalline silica or synthesized from various raw materials. Although the shape and the particle diameter of the fused silica are not particularly limited, the spherical fused silica having an average particle diameter of 5 to 30 탆 is contained in an amount of 50 to 99% by weight, the spherical fused silica having an average particle diameter of 0.001 to 1 탆 is contained in an amount of 1 to 50% To 40% by weight to 100% by weight with respect to the total filler. Further, the maximum particle diameter can be adjusted to any one of 45 탆, 55 탆 and 75 탆 according to the application. Since the molten spherical silica may contain conductive carbon as a foreign substance on the surface of silica, it is also important to select a substance having a small amount of polar foreign substances.

The amount of the inorganic filler to be used varies depending on required properties such as moldability, low stress, and high temperature strength. In embodiments, the inorganic filler may comprise from 70% to 95%, such as from 75% to 92% by weight of the epoxy resin composition based on solids. Within the above range, flame retardancy, fluidity and reliability of the epoxy resin composition can be secured.

( Mat ) Acrylate series  compound

(Meth) acrylate-based compound is cured and polymerized through a cross-linking reaction, whereby the rigidity of the epoxy resin composition for sealing a semiconductor device can be enhanced and the reliability of the semiconductor package can be increased. The (meth) acrylate-based compound may be a compound having two or more functional groups and preferably a (meth) acrylate group having five to six functional groups.

In one embodiment, the (meth) acrylate-based compound may be represented by the following formula (1).

≪ Formula 1 >

(Wherein R ₁ , R ₂ , R ₃ , R ₄ , R ₅ and R ₆ are each independently hydrogen or a methyl group).

The compound of formula (1) includes a linking structure of carbon and oxygen excluding a (meth) acrylate group and a curable (meth) acrylate group. Accordingly, a small amount of the additive is added to improve the reliability of the semiconductor package by improving the rigidity at the time of curing without inhibiting the fluidity of the composition. In addition, there is no increase in the moisture absorption rate by controlling the content of the inorganic filler in order to increase the rigidity.

The (meth) acrylate-based compound of Formula 1 may be synthesized by a conventional method known to those skilled in the art, or a commercially available product may be used.

(Meth) acrylate compound may be contained in an amount of 0.1 to 2% by weight, for example, 0.1 to 1% by weight, based on the solid content of the epoxy resin composition. Within this range, it is possible to increase the rigidity of the composition, increase the reliability of the semiconductor package, and prevent the deterioration of the fluidity of the composition.

additive

The epoxy resin composition may contain conventional additives. In embodiments, the additive may include one or more of a coupling agent, a release agent, a stress relieving agent, a colorant, a crosslinking enhancer, and a leveling agent.

The coupling agent may be at least one of epoxy silane, aminosilane, mercaptosilane, alkylsilane, and alkoxysilane, but is not limited thereto. The coupling agent may be contained in an amount of 0.1 to 1% by weight based on the solid epoxy resin composition.

As the releasing agent, at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt can be used. The release agent may be contained in an amount of 0.1 to 1% by weight based on the solid epoxy resin composition.

The stress relieving agent may be at least one selected from the group consisting of modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but is not limited thereto. The stress relieving agent may be contained in an amount of 0 to 6.5% by weight, for example, 0 to 1% by weight, for example, 0.1 to 1% by weight, based on the solid content of the epoxy resin composition.

The colorant may be carbon black or the like, and may be contained in an amount of 0.1 to 3% by weight based on the solid content of the epoxy resin composition.

The additive may be included in the epoxy resin composition based on the solid basis in an amount of 0.1% by weight to 10% by weight, for example, 0.1% by weight to 3% by weight.

The method for producing the epoxy resin composition is not particularly limited, but the components contained in the composition may be homogeneously mixed using a Henschel mixer or a Lodige mixer, and then melt-kneaded at 90 ° C to 120 ° C in a roll mill or kneader , Followed by cooling and grinding.

The epoxy resin composition of the present invention can be used for sealing semiconductor devices. As a method of sealing a semiconductor device using the composition of the present invention, a low pressure transfer molding method is most commonly used. However, it can also be formed by a method such as an injection molding method or a casting method. By the above method, a lead frame pre-plated with a copper lead frame, an iron lead frame, or one or more materials selected from the group consisting of nickel, copper, and palladium on the lead frame or a semiconductor element of an organic laminate frame can do.

The semiconductor device of the present invention can be sealed using the above epoxy resin composition.

1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention. 1, a semiconductor device 100 according to an embodiment of the present invention includes a wiring board 10, a bump 30 formed on the wiring board 10, and a semiconductor chip 20 formed on the bump 30, The gap between the wiring board 10 and the semiconductor chip 20 can be sealed with the epoxy resin composition 40 and the epoxy resin composition can be the epoxy resin composition of the embodiment of the present invention.

2 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention. 2, a semiconductor device 200 according to another embodiment of the present invention includes a wiring board 10, a bump 30 formed on the wiring board 10, and a semiconductor chip 20 formed on the bump 30, The gap between the wiring substrate 10 and the semiconductor chip 20 and the entire upper surface of the semiconductor chip 30 can be sealed with the epoxy resin composition 40. The epoxy resin composition can be used as the epoxy resin composition for sealing semiconductor devices . ≪ / RTI >

In Figs. 1 and 2, sizes of the wiring board, bumps, and semiconductor chips, the number of bumps, and the like are arbitrarily shown and can be changed.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

Specific specifications of the components used in the following Examples and Comparative Examples are as follows.

(A) an epoxy resin

(A1) Biphenyl-type epoxy resin: YX-4000, JER

(A2) Multifunctional epoxy resin: EPPN-501, Nippon Kayaku

(B) Curing agent

(B1) Multifunctional phenol resin: MEH-7500, MEIWA

(B2) Orthocresol novolac phenolic resin: HF-1,4,5M, MEIWA

(C) Curing accelerator: phosphonium system (TPP, manufactured by HOKKO)

(D) Inorganic filler: a mixture of spherical fused silica having an average particle diameter of 20 탆 and spherical fused silica having an average particle diameter of 0.5 탆 (Tathumori, MSR Series) at a weight ratio of 9:

(E) (meth) acrylate compound: In the above formula (1), R ₁ to R ₆ are all hydrogen compounds (Nippon Kayaku, Kayarad series)

(F) Colorant: Carbon black (MA-100R, manufactured by Mitsubishi Chemical Corporation)

(G) Release agent: Carnauba wax

(H) Coupling agent: epoxy silane (KBM-303, Shinetsu), mercaptosilane (KBM-803, Shinetsu)

Example  One

Each component was mixed according to the following Table 1 (unit: parts by weight) and uniformly mixed using a Henschel mixer to obtain a powdery composition. Then, the mixture was melt-kneaded at 95 ° C using a continuous kneader, and then cooled and pulverized to prepare an epoxy resin composition.

Example  2 to Example  4 and Comparative Example  1 to Comparative Example  3

An epoxy resin composition was prepared in the same manner as in Example 1, except that the content of each component was changed as shown in Table 1 below.

The properties of the epoxy resin compositions prepared in Examples and Comparative Examples were evaluated in the following Table 1.

(1) Fluidity (unit: inch): The flow length was measured using a transfer molding press at 175 ° C and 70 kgf / cm ² using an evaluation mold according to EMMI-1-66. The higher the measured value, the better the fluidity.

(2) rigidity (toughness, unit: kgf / mm): Example and the resin composition to 170 ℃ ~ 180 ℃, the clamp pressure produced in Comparative Example 70kgf / cm ^2, feed pressure 1,000psi, feed rate 0.5 ~ 1cm / s , And a curing time of 120 seconds to obtain cured specimens having a diameter of 12.78 mm, a thickness of 6.43 mm, and a length of 127.1 mm. The cured specimens were measured by a 3 point vending method using a universal testing machine (UTM) and the toughness value was calculated from the displacement value (mm) to the fracture point and the load value (kgf) to the fracture point (The descending velocity of the jig at 3 point vending is 1 mm / min).

(3) Moisture absorption rate (unit:%): The resin compositions prepared in Examples and Comparative Examples were heated at a mold temperature of 170 ° C to 180 ° C, a clamp pressure of 70 kgf / cm ² , a feed pressure of 1000 psi, a feed rate of 0.5 to 1 cm / Hour for 120 seconds to obtain a disk-shaped cured specimen having a diameter of 50 mm and a thickness of 1 mm. The obtained specimens were placed in an oven at 170 ° C to 180 ° C and post cured for 4 hours. The samples were allowed to stand at 85 ° C and 85% relative humidity for 168 hours. The moisture absorption rate was calculated by Equation (1).

<Formula 1>

Moisture absorption rate (%) = (weight of test piece after moisture absorption-weight of test piece before moisture absorption) ÷ (weight of test piece before moisture absorption) × 100

(4) Reliability: BOC Type (14 mm in width, 12 mm in thickness, 0.45 mm in thickness) After the package was dried at 125 ° C for 24 hours, 5 cycles (1 cycle was performed for 10 minutes at -65 ° C, Lt; 0 &gt; C for 10 minutes at 150 &lt; 0 &gt; C). After the pre-conditioning condition in which the package is left for 168 hours at 85 ° C and 60% relative humidity and then passed once through the IR reflow for 30 seconds at 260 ° C, And observed with a microscope. Then, the occurrence of peeling between the epoxy resin composition and the lead frame was evaluated by using a non-destructive inspection C-SAM (Scanning Acoustic Microscopy). When the appearance of the package is cracked or the peeling between the epoxy resin composition and the lead frame occurs, the reliability of the package can not be secured.

Example Comparative Example One 2 3 4 One 2 3 Epoxy resin Biphenyl-type epoxy resin 5.151 5.013 4.89 4.545 5.236 4.199 5.219 Multifunctional epoxy resin 5.151 5.013 4.89 4.545 5.236 4.199 5.219 Hardener Multifunctional phenolic resin 2.284 2.222 2.146 1.992 2.299 1.839 2.291 Orthocresol novolac phenolic resin 2.284 2.222 2.146 1.992 2.299 1.839 2.291 Hardening accelerator 0.03 0.03 0.028 0.026 0.03 0.024 0.03 Inorganic filler 84 84 84 84 84 84 84 (Meth) acrylate compound 0.1 0.5 One 2 0 3 0.05 coloring agent 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Release agent 0.3 0.3 0.2 0.2 0.2 0.2 0.2 Coupling agent
(Epoxy silane) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Coupling agent
(Mercaptosilane) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 total 100 100 100 100 100 100 100 liquidity 40 38 35 30 42 21 40 rigidity 32 46 55 48 27 46 30 Moisture absorption rate 0.35 0.33 0.34 0.35 0.36 0.35 0.34 responsibility

Exterior cracks can occur 0 0 0 0 2 0 2 Number of peeling occurrences 0/146 0/146 0/146 0/146 3/146 0/146 3/146 Number of tested semiconductors 146 146 146 146 146 146 146

As shown in Table 1, the epoxy resin composition for semiconductor device encapsulation of the present invention has high rigidity, excellent reliability in a semiconductor package, and excellent fluidity.

On the other hand, Comparative Example 1 containing no (meth) acrylate-based compound had poor rigidity and poor reliability. Comparative Example 2 containing more than 2% by weight of the (meth) acrylate-based compound in an amount of 3% by weight had poor fluidity. Comparative Example 3 containing 0.05 wt% of the (meth) acrylate-based compound and less than 0.1 wt% of the (meth) acrylate-based compound had poor rigidity and poor reliability of the semiconductor package.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (6)

An epoxy resin composition for semiconductor device encapsulation comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and a (meth) acrylate compound,
Wherein the (meth) acrylate compound is contained in an amount of 0.1 wt% to 2 wt% of the epoxy resin composition for sealing a semiconductor device.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the (meth) acrylate compound is represented by the following formula (1)
&Lt; Formula 1 >

(Wherein R ₁ , R ₂ , R ₃ , R ₄ , R ₅ and R ₆ are each independently hydrogen or a methyl group).
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the (meth) acrylate compound is contained in an amount of 0.1 to 1% by weight in the epoxy resin composition for sealing a semiconductor device.
The composition according to claim 1, wherein the epoxy resin is 0.5 to 20 wt%, the curing agent is 0.1 to 13 wt%, the curing accelerator is 0.01 to 10 wt%, the (meth) 0.1% by weight to 2% by weight of the inorganic filler, and 70% by weight to 95% by weight of the inorganic filler.
The epoxy resin composition for sealing a semiconductor device according to claim 1, wherein the composition further comprises at least one of a coupling agent, a releasing agent, a colorant, a stress relieving agent, a crosslinking promoter, and a leveling agent.
A semiconductor device encapsulated with an epoxy resin composition for encapsulating semiconductor devices according to any one of claims 1 to 5.

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