KR20190053766A - Pellicle for Extreme Ultraviolet(EUV) Lithography and Method for fabricating the same - Google Patents

Abstract

Disclosed is a pellicle for extreme ultraviolet lithography. The pellicle comprises: a support layer pattern formed by etching a support layer; a pellicle layer formed on an upper portion of the support layer pattern; and an etching stop layer pattern formed between the support layer pattern and the pellicle layer, and formed by etching the etch stop layer to prevent etching of the support layer during etching and, more specifically, to a pellicle for an extreme ultraviolet photomask which maintains high transmittance by minimizing the thickness of exposure light for extreme ultraviolet, and has excellent mechanical strength and thermal characteristics.

Description

TECHNICAL FIELD The present invention relates to a pellicle for extreme ultraviolet lithography and a method of manufacturing the same.

The present invention relates to a pellicle for extreme ultraviolet lithography and a method for producing the same, and more particularly to a pellicle for extreme ultraviolet lithography which has high transmittance to exposure light for extreme ultraviolet rays and can improve mechanical strength will be.

The development of an exposure technique called photo-lithography has enabled high integration of a semiconductor integrated circuit. In order to form a finer circuit pattern on the wafer, the resolution of the exposure equipment, also called resolution, must be increased. When a fine pattern exceeding the resolution limit is transferred, light interference due to diffraction and scattering of light occurs, and a distorted image different from the original mask pattern is transferred.

In the currently commercialized exposure process, a transfer process is carried out with an exposure apparatus using an ArF wavelength band of 193 nm to form a fine pattern on a wafer. However, since a limitation is imposed on formation of a fine pattern of 32 nm or less, Immersion lithography using a refractive index of 1.44, double lithography using two exposures, reversal of the phase of light by 180 °, Various methods such as phase shift technology, optical phase correction for correcting a phenomenon that a pattern size is designed by interference of light and diffraction effect, or rounding of the end portion are being developed.

However, with the exposure technique using the ArF wavelength, it is difficult to realize a finer circuit line width of 32 nm or less, and in addition, the production cost increases and the process complexity increases. As a result, EUV photolithography using Extreme Ultra Violet (EUV) light using a wavelength of 13.5 nm, which is a shorter wavelength than the wavelength of 193 nm as the main exposure wavelength, is attracting attention as a next generation process.

On the other hand, in the lithography process, a photomask is used as a disk for patterning, and the pattern on the photomask is transferred to a wafer. At this time, if impurities such as particles or foreign substances are adhered to the photomask, the exposure light is absorbed or reflected due to impurities, thereby damaging the transferred pattern, resulting in deterioration of the performance and yield of the semiconductor device.

Thus, a method of attaching a pellicle to a photomask is performed to prevent impurities from adhering to the surface of the photomask. The pellicle is disposed on the surface of the photomask. Even if impurities are attached on the pellicle, the focus is on the pattern of the photomask during the photolithography process, so that dust or foreign matter on the pellicle is not focused, do. In recent years, as the circuit line width becomes finer, the size of impurities which may affect the pattern damage is also reduced, and the role of the pellicle for protecting the photomask becomes more important.

When the pellicle is composed of a single film, it is easy to secure permeability by applying a material having a low extinction coefficient to extreme ultraviolet light of 13.5 nm, but it is extremely difficult to secure excellent mechanical and thermal characteristics. Accordingly, a multi-layered pellicle is being studied to supplement the pellicle performance.

The pellicle is basically composed of a pellicle layer having an ultrathin film thickness of 100 nm or less for smooth and excellent transmission of exposure light for extreme ultraviolet rays. The pellicle layer must satisfy the vacuum environment and the mechanical reliability of the movement acceleration of the stage and the thermal reliability to withstand the long exposure process, and the constituent materials and structure are determined in consideration of these factors.

Korean Patent Application No. 2008-0102204 Korean Patent Application No. 200900026939 Korean Patent Application No. 2009-0026940 Korean Patent Application No. 2011-0135209 Korean Patent Application No. 2011-7019106

An object of the present invention is to provide an extreme ultraviolet photomask pellicle excellent in transmittance and mechanical strength to exposure light for extreme ultraviolet rays

According to an aspect of the present invention, there is provided a pellicle for extreme ultraviolet lithography comprising: a support layer pattern formed by etching a support layer; A pellicle layer formed on the support layer pattern; And an etch stop layer pattern formed between the support layer pattern and the pellicle layer, the etch stop layer pattern being formed by etching the etch stop layer to prevent etching of the support layer during etching.

The pellicle layer includes at least one reinforcing layer formed of at least one of a center layer and both surfaces of the center layer and made of a material different from the center layer.

(B), phosphorus (P), arsenic (As), yttrium (Y), zirconium (Zr), niobium (Nb) and the like are added to any one of a single crystal, Molybdenum (Mo), or at least one metal silicide-based material selected from the group consisting of molybdenum silicide (MOSi), tungsten silicide, zirconium silicide (ZrSi), and tantalum silicide.

The center layer preferably has a thickness of 100 nm or less.

The reinforcing layer may be formed of a silicon compound containing at least one of carbon (C), nitrogen (N) and oxygen (O) in silicon (Si), or silicon compound (SiC), boron carbide (B ₄ C) And includes at least one of ruthenium (Ru), molybdenum (Mo), graphene, and carbon nanotube (CNT).

The reinforcing layer is made of a material different from the center layer and the etch stop layer pattern, has a thickness of 2 to 10 nm, and has a tensile stress of 50 to 150 MPa.

The etch stop layer pattern is composed of a silicon (Si) compound containing at least one of carbon (C), nitrogen (N), and oxygen (O) in silicon (Si). The etch stop layer pattern has a thickness of 10 to 500 nm. The etch stop layer pattern includes silicon oxide having compressive stress of 300 MPa or less.

An auxiliary reinforcing layer may be additionally formed on the outer surface of one or more of the reinforcing layers.

The auxiliary reinforcing layer may be formed of a silicon compound containing at least one of carbon (C), nitrogen (N) and oxygen (O) in silicon (Si), silicon compound (SiC), boron carbide (B ₄ C) , Ruthenium (Ru), molybdenum (Mo), graphene, and carbon nanotube (CNT).

The auxiliary reinforcing layer is made of a material different from the center layer and the reinforcing layer, and has a thickness of 2 to 10 nm.

When oxygen (O) is included in the material of the etch stop layer, the support layer pattern is preferably formed by etching the support layer using TMAH.

An etch mask layer may be additionally formed on the outer surface of the reinforcing layer to include a silicon compound including oxygen (O) in a silicon (Si) material.

The silicon (Si) compound forming the etching mask layer may further include at least one of carbon (C) and nitrogen (N), or may further include at least one of metal materials such as chromium, gold, and aluminum.

The reinforcing layer has a nano-sized porous surface on its outer surface.

The porous surface of the reinforcing layer may be formed by forming the center layer as a porous surface.

The porous surface of the center layer may be formed by dry etching, and the dry etching may be performed using XeF ₂ and N ₂ gas.

The roughness of the porous surface is preferably 1 to 10 nm.

The present invention can provide an extreme ultraviolet photomask pellicle having excellent mechanical strength and thermal characteristics while minimizing the thickness of exposure light for extreme ultraviolet rays while maintaining a high transmittance.

1 is a cross-sectional view of a pellicle for extreme ultraviolet lithography according to a first embodiment of the present invention.
2 is a cross-sectional view of a pellicle for extreme ultraviolet lithography according to a second embodiment of the present invention.
3 (a) to 3 (i) sequentially illustrate a method of manufacturing a pellicle for extreme ultraviolet lithography according to the first embodiment shown in Fig. 1; Fig.
4 is a diagram schematically showing a state in which a nanocore is formed in a center layer in the first embodiment of FIG.
Fig. 5 is a view showing a part of the center layer of Fig. 4 so that a nanocore is represented; Fig.

1 is a cross-sectional view showing a pellicle for an EUV photomask according to a first embodiment of the present invention.

Referring to FIG. 1, a pellicle 100 for extreme ultraviolet photomask includes a frame layer 110 and a pellicle layer 120 thereon. The frame layer 110 includes a lower support layer pattern 102a and an upper etch stop layer pattern 103a. The pellicle layer 120 includes a lower stiffening layer 104, a center layer 105, and an upper stiffening layer 106.

The supporting layer pattern 102a serves to support the pellicle layer 110 and facilitates handling and transportation when the pellicle is manufactured. The support layer pattern 102a may be formed of a material capable of a dry / wet etch process, for example, a quartz, SOI, or silicon (Si) wafer may be formed using micromachining techniques.

The supporting layer pattern 102a has a crystal orientation of [100] and has a doping density of 10 ²⁰ ions / cm ² or less so as to easily form a desired shape when patterning the supporting layer 102 of FIG. 3 by wet etching, , 8 inches, etc., and a silicon (Si) wafer having a thickness of 400 mu m to 800 mu m is preferably used.

The etch stop layer pattern 103a is buried between the support layer pattern 102a and the pellicle layer 120 and the etch stop layer pattern 103a is etched at a wet etching rate (Si) compound containing at least one of carbon (C), nitrogen (N), and oxygen (O) in silicon (Si) excellent in selectivity. The etch stop layer pattern 102a is formed of a material different from that of the lower reinforcement layer 104 and the center layer 105 and has a thickness of 10 to 500 nm.

The upper and lower reinforcing layers 104 and 106 are formed on the upper and lower surfaces of the center layer 105 as reinforcing layers for reinforcing the mechanical strength and thermal properties of the pellicle centering layer 105, Has a high transmittance and serves to protect the pellicle film 120 from the high temperatures generated during the EUV process. The upper and lower reinforcing layers 104 and 106 may be formed of a silicon compound containing at least one of carbon (C), nitrogen (N) and oxygen (O) in silicon (Si) ₄ C), are different from the ruthenium (Ru), molybdenum (Mo), graphene (graphene), CNT (Carbon nano tube) comprising the one or more materials of, an etch stop layer 102 and the pinned layer 105 And has a thickness of 2 to 10 nm.

If the thickness of the upper and lower reinforcing layers 104 and 106 is less than 2 nm, the strength of the upper and lower reinforcing layers 104 and 106 may be lowered. If the thickness of the upper and lower reinforcing layers 104 and 106 is greater than 10 nm, Therefore, the optimum thickness is selected in consideration of the transmittance and the mechanical strength of the entire pellicle.

The center layer 105 is formed of a silicon layer having properties of a single crystal, an amorphous or a polycrystalline with high transmittance and is formed of a silicon layer containing boron (B), phosphorus (P), arsenic (Mo), tungsten silicide (ZrSi), tungsten silicide (ZrSi), tungsten silicide (ZrSi), tungsten silicide ), Tantalum silicide, or the like, and may be formed of a material different from the etching stopper layer pattern 103a and the upper and lower reinforcement layers 104 and 106. The center layer 105 has a thickness of 100 nm or less and preferably has a transmittance of 80% or more with respect to EUV exposure light of 13.5 nm.

EUV is absorbed well by any substance and its heat energy is strong because of its short wavelength. Therefore, heat dissipation of the pellicle film is a very important problem. However, conventional methods of solving the heat dissipation problem have focused on finding a substance having a good heat dissipation coefficient. However, in the present invention, consideration is given to the selection of a substance having a good heat release coefficient, and a method of increasing the surface area is further considered. In this method, nanopores are formed on the surface of the center layer 105 to maximize the surface area, thereby increasing the heat radiation effect.

That is, in the present invention, surface treatment is performed on the surface of the center layer 105 to reinforce the thermal properties of the center layer 105. That is, the surface of the center layer 105 is formed as a nano-sized microporous surface, whereby the outer surface of the upper stiffening layer 106 stacked thereon also becomes a porous surface. As a result, the outer surface area of the upper reinforcing layer 106 is increased to increase the heat radiating effect. It is also possible to etch the upper stiffening layer 106 itself to fabricate the upper stiffening layer 106 as a porous surface. However, it is effective to etch the center layer 105 more than to etch the upper reinforcing layer 106 in manufacturing the porous surface by etching due to the characteristics of the material.

At this time, the surface roughness is preferably 1 to 10 nm. (See FIGS. 4 and 5). When the surface roughness of the center layer 105 is a numerical value, the surface roughness of the reinforcing layer 106 is also the above value. More preferably, the surface roughness is 3 to 5 nm. When the surface roughness is about several nanometers, the influence of the transmittance uniformity of the EUV on the surface of the thin film is very small, and when the surface roughness is larger than this, the transmittance uniformity is lowered. That is, the surface roughness is preferably 1 to 10 nm in order to increase the heat dissipation effect while preventing light scattering due to the nanostructure.

In the present embodiment, a lower thin film layer pattern 130a composed of a plurality of patterns 103a, 104a, 105a, and 106a is provided under the frame layer 110. The lower thin film layer pattern 130a is formed by a pellicle (100), which will be described later with reference to FIG. 3.

2 is a cross-sectional view showing a pellicle for extreme ultraviolet lithography according to a second embodiment of the present invention. In the description of this embodiment, substantially the same parts as those in the embodiment shown in FIG. 1 are omitted from the detailed description and given the same reference numerals.

2, the pellicle for extreme ultraviolet lithography according to the second embodiment of the present invention includes a support layer pattern 102a, a frame layer 110 composed of an etching stopper layer pattern 103a, a lower reinforcement layer 104, And a pellicle layer 120 composed of a layer 105 and an upper stiffening layer 106. The pellicle layer 120 is formed of a layer 105 and an upper stiffening layer 106. [ The pellicle of the present embodiment further includes auxiliary reinforcing layers 201 and 202 provided on either or both of the upper surface and the lower surface of the pellicle layer 120.

Also in this embodiment, a lower thin film layer pattern 130a composed of a plurality of patterns 201a, 103a, 104a, 105a, 106a, and 202a is provided under the frame layer 110. [ The lower thin film layer pattern 130a is formed in the process of manufacturing the pellicle of FIG. 2, and is formed by a process similar to that of FIG. 3 described later, and a detailed description thereof will be omitted.

The auxiliary reinforcing layers 201 and 202 may be formed of a silicon compound containing at least one of carbon (C), nitrogen (N) and oxygen (O) in silicon (Si) ₄ C), ruthenium (Ru), molybdenum (Mo), graphene (graphene), CNT (Carbon nano tube) 1 includes at least one material selected from the group consisting of, an etch stop layer pattern (103a), the pinned layer 105 and the reinforcement layer Is formed of a material different from that of the first and second electrodes 104 and 106, and has a thickness of 2 to 10 nm.

Here, as in the first embodiment, the surface of the center layer 105 is subjected to surface treatment in order to improve the thermal characteristics to form a surface having nano-sized microporosity. At this time, the roughness of the surface is preferably 1 to 10 nm.

When the auxiliary reinforcing layers 201 and 202 are additionally provided as in the present embodiment, it is possible to improve the heat radiation characteristics by manufacturing the auxiliary reinforcing layer from a metal-based material.

3 (a) to 3 (i) sequentially illustrate the method of manufacturing the extreme ultraviolet lithography pellicle 100 according to the first embodiment shown in FIG.

First, as shown in FIG. 3A, a support layer 102 used as a base for manufacturing pellicles for another EUV photomask according to the present invention is prepared.

Referring to FIG. 3B, a silicon (Si) material is grown by a chemical vapor deposition (CVD) method, a thermal oxidation process, a sputtering, or an atomic layer deposition An etching stopper layer 103 made of a silicon compound containing at least one of oxygen (O), nitrogen (N), and carbon (C) is formed on the upper surface of the support layer 102. At this time, the same layer as the etch stop layer 103 is formed on the lower surface of the support layer 102.

The etch stop layer 103 is advantageously formed of a material having a high etch selectivity with respect to the support layer 102 during the etching process. Therefore, the etch selectivity is preferably 10 ⁴ or more so that the etch stop layer 103 has a sufficient wet etch selectivity with respect to the support layer 102. It is also desirable that the etch stop layer 103 minimize residual stresses to prevent breakage of the pellicle layer 120 during the pellicle making process. Accordingly, it is preferable that the etch stop layer 103 is formed to include a silicon oxide film having a compressive stress of 300 MPa or less.

Referring to FIG. 3C, the lower reinforcement layer 104 is formed on the upper etch stop layer 103 (see FIG. 3) through chemical vapor deposition (CVD), sputtering, atomic layer deposition (ALD) . At this time, the same layer as the lower reinforcing layer 104 is also formed on the lower surface of the etch stop layer 103.

The lower reinforcing layer 104 is preferably formed to have a tensile stress of 50 to 150 Mpa in consideration of prevention of surface wrinkles of the pellicle layer 120. [ Accordingly, it is preferable that the lower reinforcement layer 104 of the present invention includes silicon nitride having excellent mechanical strength and chemical durability as well as excellent step coverage.

Referring to FIG. 3D, the center layer 105 is formed on the upper surface of the lower reinforcing layer 104 by a method such as epitaxial growth, chemical vapor deposition (CVD), sputtering, . At this time, the same layer as the central layer 105 is also formed on the lower surface of the lower reinforcing layer 104.

In the present invention, the center layer 105 is preferably formed by using poly silicon which is advantageous for micro-machining and has excellent optical, thermal and mechanical properties. Also, as described above, in order to improve the thermal characteristics of the center layer 105, the surface of the center layer 105 is made to have a nano-sized porosity. In order to form microporosity on the surface, a dry method and a wet method can be used, but in the present invention, a dry etching method is preferable. In wet etching, it is difficult to make the surface roughness less than 10 nm, and when the roughness is large, the transmission uniformity to EUV is lowered. As a preferred example, the nanopore structure is fabricated using 25 sccm of XeF ₂ and 100 sccm of N ₂ gas, and the process is performed for a short time of several seconds because of the high etching rate of the polycrystalline silicon (Poly-Si).

Referring to FIG. 3E, the upper reinforcing layer 106 is deposited on the upper surface of the upper center layer 105, and the same layer as the upper reinforcing layer 106 is also formed on the lower surface of the lower central layer 105. At this time, the upper reinforcing layer 106 is formed in the same manner as the lower reinforcing layer 104 described above.

Referring to FIG. 3 (f), a thermal oxidation process, a chemical vapor deposition (CVD), a sputtering, and an atomic layer deposition (ALD) An etch mask layer 107 is formed on the outer surfaces of the upper and lower upper stiffening layers 106.

The etching mask layer 107 has a high etching selectivity with respect to the supporting layer 102 and is easy to remove after etching the supporting layer 102. The etching mask layer 107 is formed of a mixture of carbon (C), nitrogen (N) , Oxygen (O), or a metal material such as chromium, gold, or aluminum. In the present invention, it is preferable to use a silicon oxide film having excellent step coverage and excellent density of the thin film and having relatively no surface defects. The etching mask layer 107 is formed to have a thickness of at least 100 nm or more in consideration of the step of etching the entire thickness of the supporting layer 102. It may be difficult to maintain an accurate thickness since the reinforcing layer 106 or a part of the auxiliary reinforcing layer is etched during etching. In order to prevent this, it is possible to protect the surfaces of the reinforcing layer and the auxiliary reinforcing layer and to control the exact thickness by placing the etching mask layer 107 on the upper surface of the reinforcing layer 106 or the auxiliary reinforcing layer.

3G, the photoresist film pattern 108a is formed on the lower surface of the substrate, and then the photoresist film pattern 108a is used as an etching mask to form an etching mask layer 107 under the supporting layer 102, The bottom layer layer pattern 130a exposing the supporting layer 102 is formed by sequentially etching the reinforcing layer 106, the center layer 105, the bottom reinforcing layer 104 and the etching stop layer 103 through a dry or wet etching process . In the present invention, it is preferable to use dry etching with an excellent etching profile.

Referring to Figure 3h, after removing the photoresist film pattern (108a) deep etcher (Deep etcher), xenon etcher (XeF ₂ Etching of the support layer 102 through a wet etching process using dry etching such as dry etching or potassium hydroxide or potassium hydroxide (hereinafter referred to as KOH) or tetramethylammonium hydroxide (hereinafter referred to as TMAH) Thereby forming a support layer pattern 102a for exposing the etch stop layer 103. [

In the present invention, it is preferable to etch the support layer 102 using TMAH having an etch selectivity of not less than 10 ⁴ with the lower thin film layer pattern 130a. Furthermore, when oxygen (O) is included in the material of the etching stopper film 103, it is particularly preferable to use TMAH for etching the supporting layer 102. [ As described above, the etching mask layer 107 may be formed of a silicon compound containing at least one of oxygen, carbon, and nitrogen in the silicon. In particular, the etching mask layer 107 may be formed of a material containing oxygen The TMAH becomes an etchant more suitable for etching the support layer 102. [

Isopropyl alcohol (hereinafter referred to as IPA), Triton X-100 (hereinafter referred to as " Triton X-100 ") or the like is used to reduce the surface roughness of the support layer 102 for forming the support layer pattern 102a, Of a surfactant may be added.

Referring to FIG. 3I, an etch stop layer pattern 103a for exposing the lower reinforcement layer 104 is formed through a dry or wet etching process, and the etch mask layer 107 is removed. Thus, Thereby completing the production of the lithography pellicle. Etching of the etch stop layer 103 and removal of the etch mask layer 107 can be done simultaneously. For this, the etch stop layer 103 and the etch mask layer 107 are preferably made of a material that is etched by the same etch material.

When the etching mask layer 107 is removed, the alkali-based etching solution remaining on the surface of the pellicle layer 130 is completely removed using the demineralized water, and the etching stopper layer 103 and the etching mask layer 107 are etched and removed. In the present invention, it is preferable to use a hydrofluoric acid (hereinafter referred to as HF) capable of etching and removing the etching stopper layer 103 and the etching mask layer 107 at the same time.

According to the present invention, since the etch stop layer 103 exists between the support layer 102 and the pellicle layer 120, the support layer 102 is etched to form the support layer pattern 102a, Unexpected damage to the pellicle layer 120 by the pellicle layer 120 is prevented. Particularly, since the thickness of the pellicle layer 120 or the thickness of the lower reinforcing layer 104 or the lower auxiliary reinforcing layer 201 is very thin compared to the thickness of the very thick supporting layer 102, the etching selectivity ratio of the supporting layer 102 Even though very large, undesirable etching damage can occur to these layers, which are mainly composed of SiN. Therefore, when the etch stop layer 103 is present as in the present invention, such damage can be further prevented.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It is not used to limit the scope. Therefore, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Accordingly, the true scope of protection of the present invention should be determined by the technical matters of the claims.

100: Pellicle
102: Support layer 102a: Support layer pattern
103: Etch stop layer 103a: Etch stop layer pattern
104: lower reinforcing layer 105: center layer
106: upper reinforcing layer 107: etching mask layer
110: frame layer 120: pellicle layer

Claims (20)

A support layer pattern formed by etching a support layer;
A pellicle layer formed on the support layer pattern; And
An etch stop layer pattern formed between the support layer pattern and the pellicle layer, the etch stop layer pattern being formed by etching an etch stop layer that prevents etching of the support layer during etching;
/ RTI >
Wherein the etch stop layer comprises oxygen (O) as a material and the support layer pattern is formed by etching the support layer using TMAH. ≪ RTI ID = 0.0 > 8. < / RTI >
The method according to claim 1,
Wherein the pellicle layer comprises at least one reinforcing layer formed on at least one of a center layer and both sides of the center layer and made of a material different from the center layer.
3. The method of claim 2,
Wherein the center layer comprises:
(B), phosphorus (P), arsenic (As), yttrium (Y), zirconium (Zr), niobium (Nb) and molybdenum (Mo) in any one of a single crystal, Further comprising one or more substances,
Wherein the pellicle is composed of at least one metal silicide-based material selected from the group consisting of molybdenum silicide (MOSi), tungsten silicide, zirconium silicide (ZrSi), and tantalum silicide.
3. The method of claim 2,
Wherein the center layer has a thickness of 100 nm or less. ≪ RTI ID = 0.0 > 11. < / RTI >
3. The method of claim 2,
The reinforcing layer may be formed of a silicon compound containing at least one of carbon (C), nitrogen (N) and oxygen (O) in silicon (Si), or silicon compound (SiC), boron carbide (B ₄ C) Wherein at least one of ruthenium (Ru), molybdenum (Mo), graphene, and carbon nanotube (CNT) is included in the pellicle.
3. The method of claim 2,
Wherein the reinforcing layer is made of a material different from the center layer and the etch stop layer pattern and has a thickness of 2 to 10 nm.
3. The method of claim 2,
Wherein the reinforcing layer has a tensile stress of 50 to 150 MPa. ≪ RTI ID = 0.0 > 8. < / RTI >
3. The method of claim 2,
Wherein the etch stop layer pattern is comprised of a silicon (Si) compound containing at least one of carbon (C), nitrogen (N), and oxygen (O) in silicon (Si).
9. The method of claim 8,
Wherein the etch stop layer pattern has a thickness of 10 to 500 nm. ≪ RTI ID = 0.0 > 8. < / RTI >
3. The method of claim 2,
Wherein the etch stop layer pattern comprises silicon oxide having a compressive stress of 300 MPa or less. ≪ RTI ID = 0.0 > 8. < / RTI >
3. The method of claim 2,
Further comprising an auxiliary reinforcing layer formed on at least one of the outer surfaces of the reinforcing layers. ≪ RTI ID = 0.0 > 11. < / RTI >
12. The method of claim 11,
The auxiliary reinforcing layer may be formed of a silicon compound containing at least one of carbon (C), nitrogen (N) and oxygen (O) in silicon (Si), silicon compound (SiC), boron carbide (B ₄ C) , Ruthenium (Ru), molybdenum (Mo), graphene, carbon nanotube (CNT), and the like.
12. The method of claim 11,
Wherein the auxiliary reinforcing layer is made of a material different from the center layer and the reinforcing layer and has a thickness of 2 to 10 nm.
3. The method of claim 2,
And an etch mask layer formed on an outer surface of the reinforcing layer and including a silicon compound containing oxygen (O) in a silicon (Si) material.
15. The method of claim 14,
The silicon (Si) compound forming the etching mask layer may further include at least one of carbon (C) and nitrogen (N), or may further include at least one of metal materials such as chromium, gold, and aluminum Pellicle for extreme ultraviolet lithography.
A support layer pattern formed by etching a support layer;
A pellicle layer formed on the support layer pattern; And
An etch stop layer pattern formed between the support layer pattern and the pellicle layer, the etch stop layer pattern being formed by etching an etch stop layer that prevents etching of the support layer during etching;
/ RTI >
Wherein the pellicle layer comprises a central layer and at least one reinforcing layer formed on at least one of both sides of the center layer and made of a material different from the center layer,
Wherein the reinforcing layer is comprised of a nano-sized porous surface on the outer surface. ≪ RTI ID = 0.0 > 8. < / RTI >
17. The method of claim 16,
Wherein the porous surface of the stiffening layer is formed by forming the center layer as a porous surface.
18. The method of claim 17,
Wherein the porous surface of the core layer is formed by dry etching. ≪ RTI ID = 0.0 > 8. < / RTI >
19. The method of claim 18,
The dry etching is a pellicle for EUV lithography, characterized in that is carried out using an N ₂ gas and XeF _2.
20. The method according to any one of claims 16 to 19,
Wherein the porous surface has a roughness of 1 to 10 nm.

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