KR20190040804A - Oxide semiconductor composition and oxide thin film transistor prepared by using the same - Google Patents
Oxide semiconductor composition and oxide thin film transistor prepared by using the same Download PDFInfo
- Publication number
- KR20190040804A KR20190040804A KR1020170131578A KR20170131578A KR20190040804A KR 20190040804 A KR20190040804 A KR 20190040804A KR 1020170131578 A KR1020170131578 A KR 1020170131578A KR 20170131578 A KR20170131578 A KR 20170131578A KR 20190040804 A KR20190040804 A KR 20190040804A
- Authority
- KR
- South Korea
- Prior art keywords
- graphene
- semiconductor composition
- oxide semiconductor
- oxide
- oxide precursor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000000203 mixture Substances 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 109
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 93
- 239000002270 dispersing agent Substances 0.000 claims abstract description 14
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 46
- 239000012702 metal oxide precursor Substances 0.000 claims description 34
- 239000002904 solvent Substances 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- DQYBDCGIPTYXML-UHFFFAOYSA-N ethoxyethane;hydrate Chemical compound O.CCOCC DQYBDCGIPTYXML-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- UEFGLENGHNNEBY-UHFFFAOYSA-N 1-methoxyethanol hydrate Chemical compound O.COC(C)O UEFGLENGHNNEBY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 16
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 241000220259 Raphanus Species 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229940044658 gallium nitrate Drugs 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- QMYDVDBERNLWKB-UHFFFAOYSA-N propane-1,2-diol;hydrate Chemical compound O.CC(O)CO QMYDVDBERNLWKB-UHFFFAOYSA-N 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- FOSPKRPCLFRZTR-UHFFFAOYSA-N zinc;dinitrate;hydrate Chemical compound O.[Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O FOSPKRPCLFRZTR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
Description
본 발명은 그래핀을 포함하면서도 분산제를 사용하지 않는 산화물 반도체 조성물 및 이를 사용하여 제조한 산화물 박막 트랜지스터에 관한 것이다. The present invention relates to an oxide semiconductor composition which includes graphene but does not use a dispersant, and an oxide thin film transistor manufactured using the oxide semiconductor composition.
박막 트랜지스터(thin film transistor; TFT)는 반도체에 흐르는 전류를 전계를 가하여 제어하는 것으로, 채널층의 반도체의 소재에 따라 비결정 실리콘 박막 트랜지스터(a-Si TFT: amorphous Silicon TFT), 다결정 실리콘 박막 트랜지스터(poli-Si TFT: polycrystalline-Silicon TFT), 및 산화물 박막 트랜지스터(oxide TFT)가 있다. BACKGROUND ART Thin film transistors (TFTs) control an electric current flowing through a semiconductor by applying an electric field. Depending on the material of a semiconductor in a channel layer, an amorphous silicon TFT (a-Si TFT), a polycrystalline silicon thin film transistor poly-Si TFT, polycrystalline-silicon TFT, and oxide TFT.
그 중에서도 산화물 박막 트랜지스터는 이동도(mobility)가 다른 반도체 소재에 비하여 빠르고 누설 전류가 적어 저전력으로 대면적, 고해상도 구현이 가능하다. 특히, 산화물은 가공이 용이하고 플라스틱 기판과 같은 플렉서블 기판에도 적용할 수 있으며, 투명하여 특히 디스플레이 소재에 적용할 수 있다. Among them, the oxide thin film transistor is faster than a semiconductor material having different mobility, and can realize a large area and high resolution with low power because of low leakage current. Particularly, the oxide is easy to process and can be applied to a flexible substrate such as a plastic substrate, and is transparent and particularly applicable to a display material.
한편, 산화물 박막 트랜지스터에서 이동도의 개선이 더욱 요구되고 있으며, 이에 따라 그래핀을 채널층에 첨가하는 방법이 고려되고 있다. 그래핀이 채널층에 첨가되면 그래핀의 우수한 전기적 특성에 의하여 이론적으로 이동도가 개선될 수 있으나, 몇 가지 문제가 있다. On the other hand, improvement of the mobility in the oxide thin film transistor is further required, and accordingly, a method of adding graphene to the channel layer has been considered. When graphene is added to the channel layer, the mobility can be improved theoretically by the excellent electrical properties of graphene, but there are some problems.
먼저, 그래핀을 채널층에 첨가하기 위해서는 채널층을 형성하기 위한 산화물 반도체 조성물에 그래핀을 첨가하여야 하며, 통상 그래핀 분산액을 제조하여 첨가하는 방법을 사용한다. 그런데, 그래핀은 서로 뭉칠려는 경향이 있어 그래핀 분산액 내에서 분산이 용이하지 않다는 문제가 있다. 또한, 그래핀의 분산을 위하여 분산제의 사용을 고려할 수 있으나, 이 경우 분산제도 채널층에 첨가되어 분산제가 불순물로 작용하는 문제가 있다. 유사한 이유로, 그래핀이 채널층에 잘 분산되도록 그래핀을 다소 과량으로 사용하여야 하는데, 이 경우 채널층 내에서 그래핀이 잘 분산되지 않아 일부 뭉치거나 하는 현상이 발생하며, 이는 오히려 이동도를 떨어뜨리는 문제가 있다. First, in order to add graphene to the channel layer, graphene should be added to the oxide semiconductor composition for forming a channel layer, and a graphene dispersion is usually prepared and added. However, there is a problem that graphene tends to aggregate with each other and dispersion is difficult in the graphene dispersion. In addition, although it is possible to consider the use of a dispersant for dispersing graphene, in this case, there is a problem that the dispersant is added to the channel layer to act as an impurity. For similar reasons, the graphene should be used in a somewhat excessive amount so that the graphene is well dispersed in the channel layer. In this case, the graphene is not well dispersed in the channel layer and some clumping occurs. There is a problem to knock.
따라서, 그래핀을 채널층에 적은 함량으로 첨가하면서도 이동도를 개선할 수 있도록, 분산제를 사용하지 않으면서도 그래핀이 잘 분산된 그래핀 분산액의 제조가 필요하다.Therefore, it is necessary to prepare a graphene dispersion in which graphene is well dispersed without using a dispersant, so as to improve mobility while adding graphene to the channel layer in a small amount.
본 발명은 그래핀을 포함하면서도 분산제를 사용하지 않는 산화물 반도체 조성물을 제공하기 위한 것이다. The present invention is to provide an oxide semiconductor composition that contains graphene but does not use a dispersant.
또한, 본 발명은 상기의 산화물 반도체 조성물을 사용하여 제조한 산화물 박막 트랜지스터를 제공하기 위한 것이다. The present invention also provides an oxide thin film transistor manufactured using the oxide semiconductor composition.
상기 과제를 해결하기 위하여, 본 발명은 그래핀; 금속 산화물 전구체; 및 용매를 포함하는 산화물 반도체 조성물에 있어서, 상기 그래핀의 탄소에 대한 산소의 중량비(O/C)는 3.0% 내지 4.2%이고, 상기 그래핀의 농도는 0.0001 내지 0.005 중량%이고, 상기 금속 산화물 전구체의 농도는 1 내지 30 중량%인, 산화물 반도체 조성물을 제공한다. In order to solve the above-mentioned problems, Metal oxide precursors; And a solvent, wherein the weight ratio (O / C) of oxygen to carbon of the graphene is 3.0% to 4.2%, the graphene concentration is 0.0001 to 0.005% by weight, And the concentration of the precursor is 1 to 30 wt%.
이하, 각 구성 별로 본 발명을 상세히 설명한다. Hereinafter, the present invention will be described in detail with respect to each constitution.
그래핀Grapina
본 발명에서 사용하는 그래핀은, 탄소에 대한 산소의 중량비(O/C)는 3.0% 내지 4.2%이다. 상기 중량비는 그래핀의 분산과 관련이 있는 것으로, 상기 중량비 범위 외에는 그래핀의 분산이 어렵다는 문제가 있다. 보다 바람직하게는, 상기 그래핀의 탄소에 대한 산소의 중량비(O/C)는 3.5% 내지 4.1%이다. In the graphene used in the present invention, the weight ratio (O / C) of oxygen to carbon is 3.0% to 4.2%. The weight ratio is related to the dispersion of graphene, and there is a problem that graphene dispersion is difficult outside the weight ratio range. More preferably, the weight ratio (O / C) of oxygen to carbon of the graphene is 3.5% to 4.1%.
또한, 상기 그래핀은 탄소를 91 내지 97 중량%로 포함한다. 또한, 상기 그래핀은 산소를 3 내지 6 중량%로 포함한다. Also, the graphene includes carbon in an amount of 91 to 97 wt%. Further, the graphene contains 3 to 6% by weight of oxygen.
또한, 상기 그래핀은 질소를 포함하지 않거나, 또는 3 중량% 이하로 포함한다. 또한, 상기 그래핀은 탄소, 산소, 및 질소 이외의 원소를 포함하지 않거나, 또는 0.5 중량% 이하로 포함한다. 특히, 상기 그래핀은 금속 원소를 포함하지 않는 것이 바람직하다. Further, the graphene does not contain nitrogen, or contains 3 wt% or less. Further, the graphene does not contain elements other than carbon, oxygen, and nitrogen, or contains 0.5 wt% or less. Particularly, it is preferable that the graphene does not contain a metal element.
한편, 상기 그래핀은 산화물 반도체 조성물 내에서 농도가 0.0001 내지 0.005 중량%이다. 상기와 같이 본 발명에 따른 그래핀은 산화물 반도체 조성물 내에서 우수한 분산성을 나타내어 적은 함량으로도 이동도를 개선할 수 있다. 상기 그래핀 농도가 0.0001 중량% 미만인 경우에는 이동도의 개선이 미미하고, 0.005 중량% 초과인 경우에는 그래핀 함량이 많아 뭉치는 경향이 있어 오히려 이동도가 저하되는 문제가 있다. On the other hand, the concentration of graphene in the oxide semiconductor composition is 0.0001 to 0.005% by weight. As described above, the graphene according to the present invention exhibits excellent dispersibility in the oxide semiconductor composition and can improve the mobility even in a small amount. When the graphene concentration is less than 0.0001% by weight, the improvement of mobility is insignificant. When the graphene concentration is more than 0.005% by weight, the graphene concentration tends to increase and the mobility is lowered.
또한, 상기 그래핀의 입도는 D50을 기준으로 0.2 내지 1.0 um이 바람직하다. The grain size of the graphene is preferably 0.2 to 1.0 mu m based on D50.
금속 산화물 전구체Metal oxide precursor
본 발명의 금속 산화물 전구체는, 산화물 박막 트랜지스터의 채널층의 제조에 사용되는 것이면 특별히 제한되지 않는다. The metal oxide precursor of the present invention is not particularly limited as long as it is used for producing a channel layer of an oxide thin film transistor.
일례로, 본 발명의 금속 산화물 전구체는, 산화 망간 전구체, 산화 인듐 전구체, 산화 갈륨 전구체, 산화 아연 전구체, 산화 주석 전구체, 또는 이의 조합일 수 있다. 구체적으로, 상기 산화 망간 전구체는 산화 마그네슘, 마그네슘 아세테이트, 또는 질산 망간을 들 수 있다. 또한, 상기 산화 인듐 전구체는 산화 인듐, 인듐 클로라이드, 또는 질산 인듐을 들 수 있다. 또한, 상기 산화 갈륨 전구체는, 산화 갈륨, 갈륨 클로라이드, 또는 질산 갈륨을 들 수 있다. 또한, 상기 산화 아연 전구체는, 산화 아연, 징크 클로라이드, 징크 아세테이트, 또는 질산 아연을 들 수 있다. 또한, 상기 산화 주석 전구체는, 산화 주석, 틴 클로라이드, 틴 아세테이트, 또는 질산 주석을 들 수 있다. 바람직하게는, 상기 금속 산화물 전구체는, 산화 인듐 전구체, 산화 갈륨 전구체, 및 산화 아연 전구체를 포함한다. As an example, the metal oxide precursor of the present invention can be a manganese oxide precursor, an indium oxide precursor, a gallium oxide precursor, a zinc oxide precursor, a tin oxide precursor, or a combination thereof. Specifically, the manganese oxide precursor may be magnesium oxide, magnesium acetate, or manganese nitrate. The indium oxide precursor may be indium oxide, indium chloride, or indium nitrate. The gallium oxide precursor may be gallium oxide, gallium chloride, or gallium nitrate. The zinc oxide precursor may be zinc oxide, zinc chloride, zinc acetate, or zinc nitrate. The tin oxide precursor may be tin oxide, tin chloride, tin acetate, or tin nitrate. Preferably, the metal oxide precursor comprises an indium oxide precursor, a gallium oxide precursor, and a zinc oxide precursor.
상기 금속 산화물 전구체는 산화물 반도체 조성물 내에서 농도가 1 내지 30 중량%이다. 상기 농도가 1 중량% 미만이 경우에는 농도가 너무 묽어 산화물 반도체 제조에 어려움이 있고, 상기 농도가 30 중량%를 초과하는 경우에는 농도가 너무 진하여 그래핀의 분산에 문제가 발생할 수 있다. The metal oxide precursor has a concentration of 1 to 30 wt% in the oxide semiconductor composition. If the concentration is less than 1% by weight, the concentration is too low to produce oxide semiconductors. If the concentration exceeds 30% by weight, the concentration may be too low, which may cause dispersion of graphene.
한편, 상기 금속 산화물 전구체에 대한 그래핀의 중량비는 0.001 내지 0.1%가 바람직하다. 상기 중량비가 0.001% 미만인 경우에는 그래핀 첨가량이 적어 이동도의 개선이 미미하고, 상기 중량비가 0.1% 초과인 경우에는, 그래핀 함량이 많아 뭉치는 경향이 있어 오히려 이동도가 저하되는 문제가 있다. 보다 바람직하게는, 상기 금속 산화물 전구체에 대한 그래핀의 중량비는 0.001 내지 0.01%이다. On the other hand, the weight ratio of graphene to the metal oxide precursor is preferably 0.001 to 0.1%. When the weight ratio is less than 0.001%, the amount of graphene added is small and the improvement in mobility is insignificant. When the weight ratio is more than 0.1%, the graphene content tends to be large and aggregation tends to occur, . More preferably, the weight ratio of graphene to the metal oxide precursor is 0.001 to 0.01%.
용매menstruum
본 발명에서 사용하는 용매는, 상술한 그래핀의 분산매와 금속 산화물 전구체의 용매 역할을 하는 것으로, 금속 산화물 전구체를 용해시킬 수 있어야 할 뿐만 아니라 그래핀을 잘 분산시킬 수 있어야 한다. The solvent used in the present invention plays a role of a solvent for the dispersion medium of the graphene and the metal oxide precursor described above and must not only dissolve the metal oxide precursor but also be able to disperse the graphene well.
바람직하게는, 상기 용매로 물, N-메틸피롤리돈, N,N-디메틸포름아미드, 프로필렌 글리콜 메틸 에테르, 2-메톡시에탄올, 또는 이의 조합을 사용할 수 있다. 보다 바람직하게는, 상기 용매로, (i) 물, 및 프로필렌 글리콜 메틸 에테르의 조합, (ii) N-메틸피롤리돈, 또는 (iii) 물, 및 2-메톡시에탄올의 조합을 사용할 수 있다. 한편, 상기 용매 중 (i) 물, 및 프로필렌 글리콜 메틸 에테르의 조합, 또는 (iii) 물, 및 2-메톡시에탄올의 조합을 사용하는 경우에는, 물을 적게 사용하는 것이 바람직하며, 구체적으로 물과 프로필렌 글리콜 메틸 에테르 또는 2-메톡시에탄올의 중량비가 5~50:95~50이 바람직하고, 보다 바람직하게는 5~30:95~70이다. Preferably, water, N-methylpyrrolidone, N, N-dimethylformamide, propylene glycol methyl ether, 2-methoxyethanol, or a combination thereof may be used as the solvent. More preferably, a combination of (i) water and propylene glycol methyl ether, (ii) N-methylpyrrolidone, or (iii) water and 2-methoxyethanol may be used as the solvent . On the other hand, when a combination of (i) water and propylene glycol methyl ether in the above solvent, or (iii) a combination of water and 2-methoxyethanol is used, it is preferable to use less water, And propylene glycol methyl ether or 2-methoxyethanol is preferably 5 to 50:95 to 50, more preferably 5 to 30:95 to 70.
한편, 후술할 바와 같이, 본 발명에 따른 산화물 반도체 조성물은, 그래핀 분산액과 금속 산화물 전구체 용액을 각각 따로 제조하여 혼합하여 제조할 수 있으며, 이때 각 용액의 용매로 상술한 용매를 사용한다. 이때, 상기 그래핀 분산액의 용매와 금속 산화물 전구체 용액의 용매는 서로 동일하거나 상이할 수 있다. Meanwhile, as described later, the oxide semiconductor composition according to the present invention can be prepared by separately preparing and mixing the graphene dispersion and the metal oxide precursor solution, and the solvent described above is used as a solvent for each solution. At this time, the solvent of the graphene dispersion and the solvent of the metal oxide precursor solution may be the same or different.
산화물 반도체 조성물의 제조 방법Method of manufacturing oxide semiconductor composition
상술한, 본 발명에 따른 산화물 반도체 조성물은, 하기의 단계를 포함하는 제조 방법으로 제조할 수 있다:The above-described oxide semiconductor composition according to the present invention can be produced by a manufacturing method comprising the following steps:
1) 그래핀 분산액을 제조하는 단계;1) preparing a graphene dispersion;
2) 금속 산화물 전구체 용액을 제조하는 단계; 및2) preparing a metal oxide precursor solution; And
3) 상기 단계 1의 그래핀 분산액과 상기 단계 2의 금속 산화물 전구체 용액을 혼합하는 단계.3) mixing the graphene dispersion of step 1 and the metal oxide precursor solution of step 2;
상기 단계 1의 그래핀 분산액을 제조하는 단계는, 그래핀을 상술한 용매에 첨가하여 제조하거나, 또는 그라파이트를 상술한 용매에 첨가한 후 그라파이트를 박리하는 방법으로 제조할 수 있다. 후자의 경우, 그라파이트를 박리하는 방법은 상술한 용매 내에서 그래파이트를 박리하는 것이면 특별히 제한되지 않으며, 예를 들어 초음파 박리 방법, 고압 균질화 방법 등을 사용할 수 있다. The step of preparing the graphene dispersion of step 1 may be prepared by adding graphene to the above-mentioned solvent, or adding graphite to the above-mentioned solvent, followed by peeling the graphite. In the latter case, the method of peeling the graphite is not particularly limited as far as the graphite is peeled in the above-mentioned solvent. For example, the peeling method of the ultrasonic wave and the homogenization method of the high pressure can be used.
한편, 상기 그래핀 분산액을 제조한 이후에는, 원심 분리를 통하여 분산이 잘 된 그래핀 분산액을 회수하는 단계를 추가할 수 있다. 구체적으로, 상기 단계 1에서 제조한 그래핀 분산액을 원심 분리한 후, 이의 상층액을 회수하여 사용할 수 있다. On the other hand, after the graphene dispersion is prepared, a step of recovering a well-dispersed graphene dispersion through centrifugation can be added. Specifically, the graphene dispersion prepared in the step 1 may be centrifuged and the supernatant thereof recovered.
상기 단계 2의 금속 산화물 전구체 용액을 제조하는 단계는, 앞서 상술한 금속 산화물 전구체를 앞서 상술한 용매에 첨가하여 제조할 수 있다. The step of preparing the metal oxide precursor solution of step 2 may be performed by adding the metal oxide precursor described above to the solvent described above.
상기 단계 3은 상기 단계 1의 그래핀 분산액과 상기 단계 2의 금속 산화물 전구체 용액을 혼합하는 단계로서, 그래핀의 분산을 위하여 혼합 후 초음파 처리하는 단계를 추가로 포함할 수 있다. The step 3 may be a step of mixing the graphene dispersion of the step 1 and the metal oxide precursor solution of the step 2, and may further include mixing and ultrasonic processing to disperse the graphene.
산화물 박막 트랜지스터Oxide thin film transistor
한편, 본 발명은 상술한 본 발명에 따른 산화물 반도체 조성물로 제조되는, 산화물 박막 트랜지스터를 제공한다. Meanwhile, the present invention provides an oxide thin film transistor fabricated using the oxide semiconductor composition according to the present invention.
상기 산화물 박막 트랜지스터는 그래핀을 사용한다는 점을 제외하고는 종래 금속 산화물 전구체로부터 산화물 박막 트랜지스터를 제조하는 것과 동일하다. 예를 들어, 본 발명에 따른 산화물 반도체 조성물을 기판 상에 코팅한 후, 열처리하여 제조할 수 있다. Except that the oxide thin film transistor uses graphene, which is equivalent to fabricating an oxide thin film transistor from a conventional metal oxide precursor. For example, the oxide semiconductor composition according to the present invention may be coated on a substrate and then heat-treated.
본 발명에 따른 산화물 박막 트랜지스터는 그래핀을 포함할 뿐만 아니라 그래핀의 분산을 위한 별도의 분산제의 사용이 없기 때문에 채널층의 이동도를 개선할 수 있다. 또한, 분산성이 우수한 그래핀을 사용하였기 때문에, 그래핀을 적은 양을 사용함에도 이동도를 현저히 개선할 수 있다. The oxide thin film transistor according to the present invention not only includes graphene but also has no use of a dispersant for dispersing graphene, thereby improving the mobility of the channel layer. Also, since graphene having excellent dispersibility is used, mobility can be remarkably improved even when a small amount of graphene is used.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시한다. 그러나 하기의 실시예는 본 발명을 보다 쉽게 이해하기 위하여 제공되는 것일 뿐, 이에 의해 본 발명의 내용이 한정되는 것은 아니다.Hereinafter, preferred embodiments of the present invention will be described in order to facilitate understanding of the present invention. However, the following examples are provided only for the purpose of easier understanding of the present invention, and the present invention is not limited thereto.
이하, 실시예 및 비교예에서 사용한 그라파이트는 하기 표 1과 같으며, 원소 비율은 다음과 같다. The graphite used in Examples and Comparative Examples are as shown in Table 1 below, and the element ratios are as follows.
2) UP-10-α : 일본흑연공업社
3) BNC30 : IMERYS社1) GNH: Graphene platform company
2) UP-10-α: Japanese Graphite Industry Co., Ltd.
3) BNC30: IMERYS
실시예Example 1 One
단계 1) 그래핀 분산액의 제조Step 1) Preparation of graphene dispersion
그라파이트(GNH)를, PGME(Propylene Glycol Methyl Ether) 및 물의 혼합 용매(PGME:물=80:20(중량비))에 첨가하고, 고압균질기(모델명: JN-100, 제조사: Jokoh社, 200 ㎛ 노즐 이용)를 사용하여 2000 bar에서 순환 방식으로 분산시켰다. 상기 분산액을 원심분리기(모델명: Centrifuge 5810R, 제조사: Eppendorf社)로 4600 G에서 30분 동안 원심분리한 후 상층액을 회수하여 그래핀 분산액을 제조하였다. 상기 그래핀 분산액에서 그래핀의 농도는 0.061 중량%였고, 그래핀의 성분을 분석한 결과, C: 95%, O: 3.8%, N: 1.2%, S: 0% 및 금속원소: 0%로 확인되었다(O/C = 4%). 또한, 상기 그래핀 분산액에 별도의 분산제는 첨가하지 않았다. (GNH) was added to a mixed solvent of PGME (Propylene Glycol Methyl Ether) and water (PGME: water = 80:20 (weight ratio)) and a high pressure homogenizer (model: JN-100, Using a nozzle) was circulated at 2000 bar. The dispersion was centrifuged at 4600 G for 30 minutes using a centrifuge (model: Centrifuge 5810R, manufactured by Eppendorf), and the supernatant was recovered to prepare a graphene dispersion. The concentration of graphene in the graphene dispersion was 0.061% by weight. As a result of analyzing the components of graphene, it was found that the content of C was 95%, O was 3.8%, N was 1.2%, S was 0%, and the metal element was 0% (O / C = 4%). No additional dispersant was added to the graphene dispersion.
단계 2) 금속 산화물 전구체 용액 제조Step 2) Preparation of metal oxide precursor solution
질산 인듐 수화물(indium nitrate hydrate; 0.085 mol), 질산 갈륨 수화물(gallium nitrate hydrate; 0.0125 mol), 및 질산 아연 수화물(zinc nitrate hydrate; 0.0275 mol)을, PGME 및 물의 혼합 용매(PGME:물=80:20(중량비))에 첨가하고, 상온에서 3시간 동안 교반하여 금속 산화물 전구체 용액을 제조하였다. 상기 금속 산화물 전구체 용액에서 금속 산화물 전구체의 농도는 4.14 중량%였고, In:Ga:Zn의 몰비는 6.8:1:2.2였다. 0.095 mol of gallium nitrate hydrate and 0.0275 mol of zinc nitrate hydrate were mixed in a mixed solvent of PGME and water (PGME: water = 80: 20 (weight ratio)), and the mixture was stirred at room temperature for 3 hours to prepare a metal oxide precursor solution. The concentration of the metal oxide precursor in the metal oxide precursor solution was 4.14% by weight, and the molar ratio of In: Ga: Zn was 6.8: 1: 2.2.
단계 3) 산화물 반도체 조성물의 제조Step 3) Preparation of oxide semiconductor composition
상기 단계 1의 그래핀 분산액과, 상기 단계 2의 금속 산화물 전구체 용액을 10분 동안 혼합하고, 이어 10분 동안 초음파 처리하여 산화물 반도체 조성물을 제조하였다. 상기 산화물 반도체 조성물에서, 그래핀의 농도는 0.0002 중량%였고, 금속 산화물 전구체의 농도는 4.126%이었다. The graphene dispersion of step 1 and the metal oxide precursor solution of step 2 were mixed for 10 minutes and then ultrasonicated for 10 minutes to prepare an oxide semiconductor composition. In the oxide semiconductor composition, the concentration of graphene was 0.0002 wt%, and the concentration of the metal oxide precursor was 4.126%.
실시예Example 2 및 3 2 and 3
상기 실시예 1과 동일한 방법으로 제조하되, 하기 표 1과 같이 산화물 반도체 조성물에서, 그래핀의 농도가 각각 0.0004 중량% 및 0.0006 중량%가 되도록 산화물 반도체 조성물을 제조하였다. The oxide semiconductor composition was prepared in the same manner as in Example 1 except that the concentrations of graphene in the oxide semiconductor composition were 0.0004 wt% and 0.0006 wt%, respectively, as shown in Table 1 below.
실시예Example 4 및 5 4 and 5
상기 실시예 1과 동일한 방법으로 제조하되, 하기 표 1과 같이 그래핀 분산액의 용매와 산화물 반도체 용액의 용매를 달리하여, 산화물 반도체 조성물을 제조하였다. The oxide semiconductor composition was prepared in the same manner as in Example 1 except that the solvent of the graphene dispersion and the solvent of the oxide semiconductor solution were changed as shown in Table 1 below.
비교예Comparative Example 1 One
하기 표 2와 같이, 실시예 4와 동일한 방법으로 제조하되, 그래핀 분산액을 사용하지 않고 산화물 반도체 조성물을 제조하였다. The oxide semiconductor composition was prepared in the same manner as in Example 4, except that the graphene dispersion was not used, as shown in Table 2 below.
비교예Comparative Example 2 2
하기 표 2와 같이, 실시예 4와 동일한 방법으로 제조하되, 그래핀 분산액의 용매는 PGME 단독으로 사용하고, 그라파이트 중량 대비 50 중량%의 분산제(DISPERBYK-161, BYK社)를 사용하여 그래핀 농도가 0.895 중량%가 되도록 그래핀 분산액을 제조하여, 산화물 반도체 조성물을 제조하였다. PGME was used alone as a solvent for the graphene dispersion, and the graphene concentration was measured using a dispersant (DISPERBYK-161, manufactured by BYK) of 50 wt% based on the weight of the graphite, as shown in Table 2 below. Was 0.895% by weight, to prepare an oxide semiconductor composition.
비교예Comparative Example 3 3
실시예 1의 단계 1에서, GNH 대신 BNC30을 사용하고, 용매로 PGME 및 물의 혼합 용매(PGME:물=60:40(중량비))를 사용하여 동일한 방법으로 그래핀 분산액을 제조하였다. 그러나, 그래핀이 전혀 분산되지 않았다. A graphene dispersion was prepared in the same manner as in step 1 of Example 1 except that BNC30 was used in place of GNH and a mixed solvent of PGME and water (PGME: water = 60: 40 (weight ratio)) was used as a solvent. However, graphene was not dispersed at all.
비교예Comparative Example 4 4
실시예 1의 단계 1에서, GNH 대신 UP-10-α을 사용하고, 용매로 NMP를 사용하여 동일한 방법으로 그래핀 분산액을 제조하였다. 그러나, 곧바로 그래핀의 침전이 발생하였다. In step 1 of Example 1, a graphene dispersion was prepared in the same manner using UP-10-α instead of GNH and NMP as a solvent. However, precipitation of graphene occurred immediately.
비교예Comparative Example 5 5
실시예 1의 단계 1 및 2와 동일한 방법으로 각각 그래핀 분산액 및 금속 산화물 전구체 용액을 제조하였다. A graphene dispersion and a metal oxide precursor solution were prepared in the same manner as in steps 1 and 2 of Example 1, respectively.
상기 그래핀 분산액과, 금속 산화물 전구체 용액을 10분 동안 혼합하고, 이어 10분 동안 초음파 처리하여 산화물 반도체 조성물을 제조하였다. 상기 산화물 반도체 조성물에서, 그래핀의 농도는 0.0155 중량%이었고, 금속 산화물 전구체의 농도는 3.0911%이었다. The graphene dispersion and the metal oxide precursor solution were mixed for 10 minutes and then ultrasonicated for 10 minutes to prepare an oxide semiconductor composition. In the oxide semiconductor composition, the concentration of graphene was 0.0155 wt%, and the concentration of the metal oxide precursor was 3.0911%.
실험예Experimental Example : 산화물 반도체의 제조: Manufacture of oxide semiconductors
Si/SiO2 wafer를 아세톤으로 10분, 이소프로필 알코올(IPA)로 10분, 및 UV-ozone으로 20분 동안 세척하여 기판을 준비하였다. 상기 기판에, 앞서 실시예 1 내지 5 및 비교예 1, 2, 및 5에서 제조한 각각의 산화물 반도체 조성물을, 500 rpm으로 5초 및 4000 rpm으로 30초의 조건으로 스핀코팅 하고, 50℃에서 5분동안 예비-베이킹(pre-baking) 및 380℃에서 4시간 동안 어닐링(annealing)하여 두께 약 7 내지 10 nm의 산화물 반도체를 제조하였다. 이어, thermal evaporator를 이용하여 Source/Drain 전극을 75 nm 두께로 Aluminum 증착하였다. The substrate was prepared by washing the Si / SiO 2 wafer with acetone for 10 minutes, isopropyl alcohol (IPA) for 10 minutes, and UV-ozone for 20 minutes. Each of the oxide semiconductor compositions prepared in Examples 1 to 5 and Comparative Examples 1, 2, and 5 was spin-coated on the substrate under the conditions of 500 rpm for 5 seconds and 4000 rpm for 30 seconds, Min and pre-baking for 4 minutes and annealing at 380 캜 for 4 hours to prepare an oxide semiconductor having a thickness of about 7 to 10 nm. Next, the source / drain electrode was deposited to a thickness of 75 nm by using a thermal evaporator.
상기 각각 제조한 산화물 반도체에 대하여, 이동도(mobility)를 측정하였다. 구체적으로, Agilent社 4155C 장비를 이용하여, Source/Drain 전압(Vds)을 30V로 고정한 후, Gate 전압을 -30 ~ 30V로 변경하며 drain current를 측정하여 얻어진 I-V curve로부터 saturation mobility를 얻었으며, Gate 전압이 30V일 때의 saturation mobility를 하기 표 2 및 3에 나타내었다. Mobility was measured for each of the oxide semiconductors prepared above. Specifically, the saturation mobility was obtained from the IV curve obtained by measuring the drain current by changing the gate voltage to -30 to 30 V after fixing the source / drain voltage (Vds) to 30 V using the Agilent 4155C equipment. Gate The saturation mobility when the voltage is 30V is shown in Tables 2 and 3 below.
분산액GnP
Dispersion
(80:20)PGME: H 2 O
(80:20)
(80:20)PGME: H 2 O
(80:20)
(80:20)PGME: H 2 O
(80:20)
(90:10)2-ME 1) : H 2 O
(90:10)
[80:20]PGME: H 2 O
[80:20]
[80:20]PGME: H 2 O
[80:20]
[80:20]PGME: H 2 O
[80:20]
(cm2/Vs)Mobility
(cm 2 / Vs)
분산액GnP
Dispersion
(60:40)PGME: H 2 O
(60:40)
(80:20)PGME: H 2 O
(80:20)
[80:20]PGME: H 2 O
[80:20]
(cm2/Vs)Mobility
(cm 2 / Vs)
상기 표 2 및 3에 나타난 바와 같이, 본 발명의 실시예에 따른 산화물 반도체 조성물로 제조한 산화물 반도체는 비교예에 비하여 이동도가 현저히 높음을 확인할 수 있었다. 구체적으로, 비교예 1과 비교하였을 때 그래핀을 포함함에 따라 이동도가 개선됨을 확인할 수 있었다. 또한, 비교예 2와 비교하였을 때 그래핀의 함량은 동일하더라도 분산제가 포함되는 경우에는, 이동도가 오히려 감소함을 확인할 수 있었다. 또한, 비교예 5와 같이 그래핀의 함량이 지나치게 높은 경우에는 이동도가 오히려 감소됨을 확인하였다.As shown in Tables 2 and 3, it was confirmed that the oxide semiconductor prepared from the oxide semiconductor composition according to the embodiment of the present invention has significantly higher mobility than the comparative example. Specifically, when compared with Comparative Example 1, mobility was improved by including graphene. Also, when compared with Comparative Example 2, it was confirmed that even when the content of graphene was the same, the mobility was decreased when a dispersant was included. Also, as in Comparative Example 5, it was confirmed that when the content of graphene was too high, the mobility was rather reduced.
Claims (10)
상기 그래핀의 탄소에 대한 산소의 중량비(O/C)는 3.0% 내지 4.2%이고,
상기 그래핀의 농도는 0.0001 내지 0.005 중량%이고,
상기 금속 산화물 전구체의 농도는 1 내지 30 중량%인,
산화물 반도체 조성물.
Graphene; Metal oxide precursors; And an oxide semiconductor composition comprising a solvent,
The weight ratio (O / C) of oxygen to carbon of the graphene is 3.0% to 4.2%
The concentration of the graphene is 0.0001 to 0.005% by weight,
Wherein the concentration of the metal oxide precursor is 1 to 30 wt%
Oxide semiconductor composition.
상기 그래핀의 탄소에 대한 산소의 중량비(O/C)는 3.5% 내지 4.1%인,
산화물 반도체 조성물.
The method according to claim 1,
Wherein a weight ratio (O / C) of oxygen to carbon of the graphene is 3.5% to 4.1%
Oxide semiconductor composition.
상기 그래핀은 금속 원소를 포함하지 않는,
산화물 반도체 조성물.
The method according to claim 1,
Wherein the graphene comprises no metal element,
Oxide semiconductor composition.
상기 금속 산화물 전구체의 농도는 3 내지 10 중량%인,
산화물 반도체 조성물.
The method according to claim 1,
Wherein the concentration of the metal oxide precursor is 3 to 10 wt%
Oxide semiconductor composition.
상기 금속 산화물 전구체는, 산화 망간 전구체, 산화 인듐 전구체, 산화 갈륨 전구체, 산화 아연 전구체, 산화 주석 전구체, 또는 이의 조합인,
산화물 반도체 조성물.
The method according to claim 1,
Wherein the metal oxide precursor is selected from the group consisting of a manganese oxide precursor, an indium oxide precursor, a gallium oxide precursor, a zinc oxide precursor, a tin oxide precursor,
Oxide semiconductor composition.
상기 금속 산화물 전구체에 대한 그래핀의 중량비는 0.001 내지 0.1%인,
산화물 반도체 조성물.
The method according to claim 1,
Wherein the weight ratio of graphene to the metal oxide precursor is 0.001 to 0.1%
Oxide semiconductor composition.
상기 용매는 물, N-메틸피롤리돈, N,N-디메틸포름아미드, 프로필렌 글리콜 메틸 에테르, 2-메톡시에탄올, 또는 이의 조합인,
산화물 반도체 조성물.
The method according to claim 1,
The solvent may be water, N-methyl pyrrolidone, N, N-dimethylformamide, propylene glycol methyl ether, 2-
Oxide semiconductor composition.
상기 용매는, (i) 물, 및 프로필렌 글리콜 메틸 에테르의 조합, (ii) N-메틸피롤리돈, 또는 (iii) 물, 및 2-메톡시에탄올의 조합인,
산화물 반도체 조성물.
The method according to claim 1,
Wherein the solvent is selected from the group consisting of (i) a combination of water and propylene glycol methyl ether, (ii) N-methylpyrrolidone, or (iii) water and 2-methoxyethanol,
Oxide semiconductor composition.
상기 산화물 반도체 조성물은 분산제를 포함하는 않는,
산화물 반도체 조성물.
The method according to claim 1,
The oxide semiconductor composition may contain a dispersant,
Oxide semiconductor composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170131578A KR102288336B1 (en) | 2017-10-11 | 2017-10-11 | Oxide semiconductor composition and oxide thin film transistor prepared by using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170131578A KR102288336B1 (en) | 2017-10-11 | 2017-10-11 | Oxide semiconductor composition and oxide thin film transistor prepared by using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190040804A true KR20190040804A (en) | 2019-04-19 |
| KR102288336B1 KR102288336B1 (en) | 2021-08-09 |
Family
ID=66283410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170131578A KR102288336B1 (en) | 2017-10-11 | 2017-10-11 | Oxide semiconductor composition and oxide thin film transistor prepared by using the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102288336B1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101526856B1 (en) * | 2013-09-17 | 2015-06-09 | 한국화학연구원 | manufacturing method of surface treatmented nano-metal oxide and surface treatmented nano-metal oxide by the same |
| JP6078218B2 (en) * | 2010-01-26 | 2017-02-08 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Thin film transistor and manufacturing method thereof |
-
2017
- 2017-10-11 KR KR1020170131578A patent/KR102288336B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6078218B2 (en) * | 2010-01-26 | 2017-02-08 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Thin film transistor and manufacturing method thereof |
| KR101526856B1 (en) * | 2013-09-17 | 2015-06-09 | 한국화학연구원 | manufacturing method of surface treatmented nano-metal oxide and surface treatmented nano-metal oxide by the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102288336B1 (en) | 2021-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kim et al. | Stable and high-performance indium oxide thin-film transistor by Ga doping | |
| Xu et al. | Low temperature solution-processed IGZO thin-film transistors | |
| US8907336B2 (en) | Stable amorphous metal oxide semiconductor | |
| EP2786405B1 (en) | Coating liquid for forming metal oxide thin film and method for manufacturing field-effect transistor | |
| KR101284587B1 (en) | P-type transparent oxide semiconductor, transistor having the same, and manufacture method of the same | |
| TWI573280B (en) | Thin film transistor and display device | |
| US20100132788A1 (en) | Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite | |
| Kwo et al. | Advances in high κ gate dielectrics for Si and III–V semiconductors | |
| TW201140700A (en) | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device | |
| CN106489209B (en) | Thin film transistor | |
| Huang et al. | Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors | |
| Lee et al. | Solution-processed ternary alloy aluminum yttrium oxide dielectric for high performance indium zinc oxide thin-film transistors | |
| Chen et al. | ZnO bilayer thin film transistors using H2O and O3 as oxidants by atomic layer deposition | |
| Wu et al. | Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors | |
| Cho et al. | Highly stable, high mobility Al: SnZnInO back-channel etch thin-film transistor fabricated using PAN-based wet etchant for source and drain patterning | |
| Guo et al. | Influences of CuO phase on electrical and optical performance of Cu2O films prepared by middle frequency magnetron sputtering | |
| KR102288336B1 (en) | Oxide semiconductor composition and oxide thin film transistor prepared by using the same | |
| JPWO2014136916A1 (en) | Oxynitride semiconductor thin film | |
| US10475934B2 (en) | Thin film transistor, method for manufacturing same and semiconductor device comprising said thin film transistor | |
| CN107527946A (en) | Oxide semiconductor thin-film, oxide thin film transistor and preparation method thereof | |
| WO2016035503A1 (en) | Thin film transistor | |
| Lou et al. | Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties | |
| KR101596569B1 (en) | P-type amorphous oxide semiconductor comprising gallium, and method of manufacturing the same | |
| Avis et al. | Solution Processed Oxide Thin Film Transistors | |
| WO2019216209A1 (en) | Thin film transistor including oxide semiconductor layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |