KR20190039655A - 반도체 리소그래피용 포토마스크의 임계 치수 균일도를 교정하기 위한 방법 - Google Patents
반도체 리소그래피용 포토마스크의 임계 치수 균일도를 교정하기 위한 방법 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
- 스캐너 동급 CDU 측정에 의해 교정될 CDU를 결정하는 단계,
- 캘리브레이션(calibration) 파라미터로서 전달 계수를 결정하는 단계,
- 픽셀 필드(5)를 기록하여 상기 포토마스크(2)를 교정하는 단계,
- 교정된 상기 포토마스크(2)를 확인하는 단계를 포함하며,
전달 계수는 교정된 상기 포토마스크(2)를 확인하는데 사용되고, 상기 전달 계수는 먼저 측정된 픽셀 필드(5)의 산란 함수로부터 얻어지는 것을 특징으로 한다.
Description
도 1은 기입된 픽셀 필드를 갖는 경우 및 갖지 않는 경우에 대한 스캐너의 실제 조명 조건을 도시한다.
도 2는 스캐너와 WLCD에 대한 조명 필드의 상이한 범위(extent)를 도시한다.
도 3은 포토마스크상의 규칙적인 라인 앤드 스페이스(line-and-spaces) 구조 및 그 회절 이미지를 도시한다.
도 4는 측정된 CDU에 대한 회절 차수의 강도의 비의 플롯(plot)을 도시한다.
도 5는 0의 강도와 제 1 회절 최대값의 일정한 비의 해설(elucidation)을 도시한다.
도 6은 CDC 공정에 의해 야기되는 회절 최대값의 강도의 절대 감쇠(attenuation)의 해설을 도시한다.
2 포토마스크
3 입사 동공
4a, 4b 동공 내 조명 분포
5 픽셀 필드
Claims (6)
- 반도체 리소그래피용 포토마스크(2)의 임계 치수 균일도(critical dimension uniformity; CDU)를 교정하기 위한 방법으로서,
- 스캐너 상당의 CDU 측정에 의해 교정될 CDU를 결정하는 단계,
- 캘리브레이션(calibration) 파라미터로서 전달 계수를 결정하는 단계,
- 픽셀 필드(pixel field)(5)를 기록하여 상기 포토마스크(2)를 교정하는 단계,
- 그렇게 교정된 상기 포토마스크(2)를 확인하는 단계를 포함하며,
전달 계수는 교정된 상기 포토마스크(2)를 확인하는데 사용되고, 상기 전달 계수는 먼저 측정된 픽셀 필드(5)의 산란 함수로부터 얻어지는 것을 특징으로 하는 임계 치수 균일도를 교정하기 위한 방법. - 청구항 1에 있어서,
상기 산란 함수는 상기 전달 계수를 결정하려는 목적으로 마스크 계측 장치 및 스캐너에 대한 개별적으로 적용가능한 적분 한계내에서 적분되는 것을 특징으로 하는 임계 치수 균일도를 교정하기 위한 방법. - 청구항 2에 있어서,
적분의 개별적인 결과로부터 몫(quotient)을 형성하는 것이 상기 전달 계수를 결정하려는 목적으로 수행되는 것을 특징으로 하는 임계 치수 균일도를 교정하기 위한 방법. - 청구항 1 내지 청구항 3 중 어느 한 항에 있어서,
상기 포토마스크(2) 상의 규칙적인 구조들에 의해 유발되는 회절 패턴의 평가 및 전달 계수는 상기 포토마스크(2)를 확인하려는 목적으로 사용되는 것을 특징으로 하는 임계 치수 균일도를 교정하기 위한 방법. - 청구항 4에 있어서,
상기 평가는 상기 픽셀 필드(5)를 기록하기 전과 후의 회절 최대값들의 절대 강도들의 비교를 포함하는 것을 특징으로 하는 임계 치수 균일도를 교정하기 위한 방법. - 청구항 1 내지 청구항 3 중 어느 한 항에 있어서,
마스크 계측 장치 및 스캐너에 대한 상이한 조명 기법들이 상기 전달 계수를 결정할 때 고려되는 것을 특징으로 하는 임계 치수 균일도를 교정하기 위한 방법.
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DE102017123114.5 | 2017-10-05 | ||
DE102017123114.5A DE102017123114B3 (de) | 2017-10-05 | 2017-10-05 | Verfahren zur Korrektur der Critical Dimension Uniformity einer Fotomaske für die Halbleiterlithographie |
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KR20190039655A true KR20190039655A (ko) | 2019-04-15 |
KR102127300B1 KR102127300B1 (ko) | 2020-06-29 |
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US (1) | US10578975B2 (ko) |
KR (1) | KR102127300B1 (ko) |
CN (1) | CN109634054B (ko) |
DE (1) | DE102017123114B3 (ko) |
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DE102019103118B4 (de) * | 2019-02-08 | 2024-02-08 | Carl Zeiss Smt Gmbh | Verfahren zur Bestimmung optischer Eigenschaften einer Photomaske für die Halbleiterlithographie unter Verwendung einer flexiblen Beleuchtungseinheit |
US11366382B2 (en) | 2020-02-24 | 2022-06-21 | Carl Zeiss Smt Gmbh | Method and apparatus for performing an aerial image simulation of a photolithographic mask |
CN111609998A (zh) * | 2020-05-11 | 2020-09-01 | 歌尔股份有限公司 | 光照均匀性的检测方法、检测装置和可读存储介质 |
CN113625525B (zh) * | 2021-08-09 | 2023-04-28 | 长鑫存储技术有限公司 | 光罩及光罩的制备方法 |
Citations (3)
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JP2006179938A (ja) * | 2004-12-22 | 2006-07-06 | Asml Netherlands Bv | サイドローブのプリントを避けるための最適化 |
KR20140051317A (ko) * | 2011-07-20 | 2014-04-30 | 칼 짜이스 에스엠에스 엘티디 | 포토리소그래픽 마스크의 임계 치수 변동을 결정하기 위한 방법 및 장치 |
KR20160008638A (ko) * | 2013-06-12 | 2016-01-22 | 에이에스엠엘 네델란즈 비.브이. | 임계 치수 관련 특성을 결정하는 방법, 검사 장치, 및 디바이스 제조 방법 |
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JP3728495B2 (ja) * | 2001-10-05 | 2005-12-21 | 独立行政法人産業技術総合研究所 | 多層膜マスク欠陥検査方法及び装置 |
US9134112B2 (en) * | 2010-02-23 | 2015-09-15 | Carl Zeiss Sms Ltd. | Critical dimension uniformity correction by scanner signature control |
DE102011078927B4 (de) | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren zum Korrigieren von Fehlern einer photolithographischen Maske |
KR101942388B1 (ko) * | 2012-02-21 | 2019-01-25 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치 및 방법 |
KR101958050B1 (ko) | 2012-04-18 | 2019-07-04 | 케이엘에이-텐코 코포레이션 | 극자외선 레티클의 임계 치수 균일성 모니터링 |
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- 2018-09-26 CN CN201811129008.2A patent/CN109634054B/zh active Active
- 2018-10-04 KR KR1020180118289A patent/KR102127300B1/ko active Active
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JP2006179938A (ja) * | 2004-12-22 | 2006-07-06 | Asml Netherlands Bv | サイドローブのプリントを避けるための最適化 |
KR20140051317A (ko) * | 2011-07-20 | 2014-04-30 | 칼 짜이스 에스엠에스 엘티디 | 포토리소그래픽 마스크의 임계 치수 변동을 결정하기 위한 방법 및 장치 |
KR20160008638A (ko) * | 2013-06-12 | 2016-01-22 | 에이에스엠엘 네델란즈 비.브이. | 임계 치수 관련 특성을 결정하는 방법, 검사 장치, 및 디바이스 제조 방법 |
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DE102017123114B3 (de) | 2019-01-10 |
CN109634054A (zh) | 2019-04-16 |
US20190107783A1 (en) | 2019-04-11 |
US10578975B2 (en) | 2020-03-03 |
KR102127300B1 (ko) | 2020-06-29 |
CN109634054B (zh) | 2022-07-26 |
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