KR20190029304A - Manufacturing method of conductive thin film comprising carbon and conductive thin film comprising carbon manufactured by the same - Google Patents

Abstract

One embodiment of the present invention provides a method of manufacturing a carbon nanotube, comprising: preparing a carbon structure comprising at least two planar carbon molecular layers made of carbon atoms; Positioning the carbon structure such that one side of the substrate and one side of the carbon structure face each other; Contacting one surface of the carbon structure with one surface of the substrate; And forming a carbon thin film on one surface of the substrate by causing friction between one surface of the carbon structure and one surface of the substrate, wherein the plane of the carbon molecular layer is parallel to one surface of the carbon structure Containing conductive thin film.

Description

TECHNICAL FIELD [0001] The present invention relates to a method for producing a carbon-containing conductive thin film, and a carbon-containing conductive thin film produced by the method. BACKGROUND OF THE INVENTION 1. Field of the Invention [0002]

The present invention relates to a method for producing a carbon-containing conductive thin film and a carbon-containing conductive thin film produced thereby.

Recently, transparent electrodes have been used in various fields such as touch panels, display devices, and solar cells. The transparent electrode generally includes a conductive transparent thin film. Indium tin oxide (ITO), carbon nanotube (CNT), graphene, or the like is generally used as a material for forming a conductive transparent thin film .

However, in the case of ITO, the raw material indium is expensive, and ITO has brittleness, which is easily broken by external impact. In the case of carbon nanotubes and graphene, the cost of raw materials is relatively high, and the Screen Print technique is used to form a conductive transparent thin film on the substrate in a large area. However, the conductive transparent film having a constant thickness and conductivity on the substrate It is not easy to form a thin film, and a lot of material is wasted, resulting in an increase in manufacturing cost.

Therefore, there is a need for a technique for manufacturing a conductive thin film which can form a conductive thin film over a large area on a substrate and easily adjust the thickness of the conductive thin film.

The present specification intends to provide a method for producing a carbon-containing conductive thin film and a carbon-containing conductive thin film produced thereby.

One embodiment of the present invention provides a method of manufacturing a carbon nanotube, comprising: preparing a carbon structure comprising at least two planar carbon molecular layers made of carbon atoms; Positioning the carbon structure such that one side of the substrate and one side of the carbon structure face each other; Contacting one surface of the carbon structure with one surface of the substrate; And forming a carbon thin film on one surface of the substrate by causing friction between one surface of the carbon structure and one surface of the substrate, wherein the plane of the carbon molecular layer is parallel to one surface of the carbon structure Containing conductive thin film.

Another embodiment of the present invention provides a carbon-containing conductive thin film produced by a method according to an embodiment of the present invention.

According to one embodiment of the present invention, a conductive thin film containing carbon can be easily manufactured through a simple process of generating friction between the carbon structure and the substrate.

According to one embodiment of the present invention, it is possible to easily form a large-area carbon thin film on one surface of a substrate.

According to one embodiment of the present invention, a carbon thin film having excellent conductivity is formed on one surface of a substrate by setting one surface of the carbon structure and one surface of the substrate to be parallel to each other and generating friction between one surface of the carbon structure and one surface of the substrate. .

According to one embodiment of the present invention, it is possible to reduce the manufacturing cost of the carbon-containing conductive thin film and improve the manufacturing efficiency.

FIG. 1 is a schematic view illustrating positioning of a carbon structure and a substrate according to an embodiment of the present invention.
FIG. 2 is a view schematically illustrating formation of a carbon thin film on one surface of a substrate according to an embodiment of the present invention. FIG.

When an element is referred to as "including" an element throughout the specification, it is to be understood that the element may include other elements as well, without departing from the spirit or scope of the present invention.

Further, when a member is referred to herein as being "on " another member, this includes not only when a member is in contact with another member but also when there is another member between the two members.

Hereinafter, the present invention will be described in more detail.

One embodiment of the present invention provides a method of manufacturing a carbon nanotube, comprising: preparing a carbon structure comprising at least two planar carbon molecular layers made of carbon atoms; Positioning the carbon structure such that one side of the substrate and one side of the carbon structure face each other; Contacting one surface of the carbon structure with one surface of the substrate; And forming a carbon thin film on one surface of the substrate by causing friction between one surface of the carbon structure and one surface of the substrate, wherein the plane of the carbon molecular layer is parallel to one surface of the carbon structure Containing conductive thin film.

According to one embodiment of the present invention, a conductive thin film containing carbon can be easily manufactured through a simple process of generating friction between the carbon structure and the substrate.

According to an embodiment of the present invention, the carbon structure may include two or more carbon molecular layers composed of carbon atoms. The carbon molecular layer may be in a planar form, and hexagon planar units having six carbon atoms at apexes may be repeated.

According to an embodiment of the present invention, the carbon structure may be in the shape of a rod or a block extending elongated from one surface to the other surface. In addition, one side of the carbon structure may be a polygonal shape such as a circle, a triangle, a square, or the like, or may have another appropriate shape.

According to an embodiment of the present invention, the plane of the carbon molecular layer may be parallel to one surface of the carbon structure. The plane of each of the two or more carbon molecule layers included in the carbon structure may be parallel to one surface of the carbon structure. That is, the two or more carbon molecular layers may be provided along the other surface direction from one surface of the carbon structural body in a state where the plane thereof is parallel to one surface of the carbon structural body. Specifically, each of the two or more carbon molecular layers may be laminated on one surface of the carbon structural body along the other surface direction. The carbon molecular layers may be spaced apart from each other. Even when the carbon molecular layers are separated from each other, the shape of the carbon structure can be maintained by the van der Waals force between the carbon molecular layers.

According to an embodiment of the present invention, the carbon structure may have a Mohs hardness of 0.5 or more and 1 or less. By using a carbon structure having a Mohs hardness of 0.5 or more and 1 or less, it is possible to more easily form the carbon thin film on one surface of the substrate. When the Mo hardness of the carbon structure is out of the above-mentioned range, in the process of friction between the carbon structure and the substrate, the carbon structure is broken or the efficiency of forming the carbon thin film on one surface of the substrate is decreased Problems can arise.

According to one embodiment of the present invention, the substrate may have conductivity, but preferably it may not have conductivity. The substrate may be one having excellent flatness, and a substrate having a surface roughness capable of appropriately coping with the hardness of the carbon structure may be used. That is, the surface roughness of the substrate can be changed according to the hardness of the carbon structure. For example, the surface roughness Ra of the substrate may be 0.01 탆 or more and 10 탆 or less.

According to one embodiment of the present invention, the substrate may be glass or a resin film. Specifically, transparent glass, opaque glass, surface-treated glass, silica, or the like can be used as the substrate. In addition, a resin film containing at least one of polyimide, polycarbonate, polyurethane, polyvinyl chloride, and polyethylene terephthalate may be used as the base material . However, the type of substrate is not limited.

According to an embodiment of the present invention, the carbon structure may be positioned such that one surface of the substrate and one surface of the carbon structure face each other. Specifically, the carbon structure or the substrate may be positioned such that one side of the substrate and one side of the carbon structure are substantially parallel. As used herein, " substantially parallel " may refer to a fully parallel state, and may also refer to a parallel state involving minor errors in the process.

FIG. 1 is a schematic view illustrating positioning of a carbon structure and a substrate according to an embodiment of the present invention. 1 illustrates a carbon structural body 100 including two or more carbon molecular layers 110 and a plane of each of the carbon molecular layers 110 being parallel to one surface of the carbon structural body 100, As shown in Fig.

According to an embodiment of the present invention, one surface of the base material and one surface of the carbon structural body can be brought into contact with each other while maintaining a state in which one surface of the base material and one surface of the carbon structural body are opposed to each other. The substrate can be moved or the carbon structure can be moved while maintaining a state in which one surface of the substrate and one surface of the carbon structure are parallel to each other.

FIG. 2 is a view schematically illustrating formation of a carbon thin film on one surface of a substrate according to an embodiment of the present invention. FIG. 2 shows a state in which the carbon structural body 100 is pressed in a direction A perpendicular to one surface of the substrate 200 such that one surface of the carbon structural body 100 is in contact with one surface of the substrate 200, The substrate 200 is moved in a direction B parallel to one surface of the substrate 200 and the carbon thin film 300 is formed on one surface of the substrate 200.

According to an embodiment of the present invention, a carbon film may be formed on one surface of the substrate by generating friction between one surface of the carbon structure and one surface of the substrate. Specifically, the substrate is moved in a direction parallel to the one surface of the substrate, or the carbon structure is moved in a direction parallel to one surface of the carbon structure in a state where one surface of the carbon structure is in contact with one surface of the substrate , Friction can be generated between one surface of the carbon structure and one surface of the substrate. The carbon molecular layer in the carbon structure may be transferred onto one surface of the substrate during the friction between one surface of the carbon structure and one surface of the substrate.

2, the position of the carbon structure 100 is fixed while one surface of the carbon structure 100 is in contact with one surface of the substrate 200, and the carbon structure 100 is pressed The carbon structure 100 is prevented from being broken or broken in the process of generating the friction by moving the substrate 200 and the carbon film 300 is easily formed on one surface of the substrate 200 can do.

According to an embodiment of the present invention, a simple method of sliding the carbon structure on one surface of the substrate or sliding the substrate on one surface of the carbon structure in a state where one surface of the carbon structure is in contact with one surface of the substrate , It is possible to easily form a carbon thin film on one surface of the substrate. Also, the area of the carbon thin film formed on the substrate can be controlled by controlling the cross-sectional area of one surface of the carbon structural body. For example, a carbon film having a width of about 10 cm to about 100 cm may be formed on one side of the substrate by using a carbon film having a width of about 10 cm to 100 cm.

According to an embodiment of the present invention, a carbon thin film can be formed on one surface of the substrate through physical friction or abrasion between one surface of the carbon structure and one surface of the substrate. Therefore, It is possible to reduce the manufacturing cost of the carbon-containing conductive thin film and improve the manufacturing efficiency because the step of forming the surrounding atmosphere of the carbon-containing conductive material and / or the substrate is not necessary.

According to an embodiment of the present invention, as the one surface of the substrate and the one surface of the carbon structure are parallel to each other, the plane of the carbon molecular layer included in the carbon structure may be parallel to one surface of the substrate. The carbon molecular layer included in the carbon structural body may be formed in the process of generating friction between one surface of the carbon structural body and one surface of the substrate by making the plane of the carbon molecular layer included in the carbon structural body parallel to the one surface of the substrate, And the carbon molecular layer can be stably transferred onto one surface of the substrate while maintaining the structure. The carbon thin film may be coated on one surface of the substrate while the carbon molecular layer is repeatedly transferred onto one surface of the substrate. As a result, a carbon thin film having excellent electrical conductivity and having a homogeneous quality can be easily formed on one surface of the substrate.

According to an embodiment of the present invention, the step of contacting one surface of the carbon structure with the one surface of the substrate may be performed by applying a pressure of 1 kPa or more and 1,000 kPa or less to the carbon structure, . Specifically, it is preferable that the carbon structure has a carbon structure of 10 kPa or more and 1,000 kPa or less, 50 kPa or more and 900 kPa or less, 100 kPa or more and 850 kPa or less, 200 kPa or more and 700 kPa or less, 300 kPa or more and 500 kPa or less, 350 kPa or more and 450 kPa or less, kPa or more and 900 kPa or less, 50 kPa or more and 800 kPa or less, 100 kPa or more and 700 kPa or less, 150 kPa or more and 500 kPa or less, 200 kPa or more and 450 kPa or less, 250 kPa or more and 350 kPa or less, more specifically, A pressure of not less than 10 kPa and not more than 100 kPa, not less than 100 kPa and not more than 300 kPa, not less than 350 kPa and not more than 500 kPa, not less than 900 kPa and not more than 1,000 kPa, not less than 700 kPa and not more than 850 kPa, and not less than 500 kPa but not more than 650 kPa have.

The carbon thin film is effectively formed on one surface of the substrate by applying pressure in the above-described range to the carbon structure to contact one surface of the substrate with the one surface of the substrate, and then sliding the substrate on one surface of the carbon structure . When the pressure applied to the carbon structure is less than 1 kPa, physical friction or abrasion between one surface of the carbon structure and one surface of the substrate is difficult to be effectively generated, and the efficiency of forming the carbon film on one surface of the substrate is lowered A problem may arise. On the other hand, when the pressure applied to the carbon structure is more than 1,000 kPa, the pressing force of the carbon structure on one surface of the substrate is excessively excessive, so that the carbon structure is broken or the carbon molecules The structure of the layer may be deformed.

According to an embodiment of the present invention, the thickness of the carbon thin film may be 10 nm or more and 400 nm or less. Specifically, the thickness of the carbon thin film is 20 nm or more and 400 nm or less, 350 nm or more and 350 nm or less, 50 nm or more and 300 nm or less, 70 nm or more and 250 nm or less, 100 nm or more and 200 nm or less, , More preferably not less than 15 nm but not more than 300 nm, more preferably not less than 20 nm but not more than 250 nm, more preferably not less than 40 nm and not more than 200 nm, more preferably not less than 50 nm and not more than 150 nm, 250 nm or less, and 300 nm or more and 400 nm or less.

By controlling the thickness of the carbon thin film formed on one surface of the substrate to the above-described range, it is possible to realize a conductive thin film including a carbon thin film having excellent mechanical properties such as durability and conductivity. When the thickness of the carbon thin film formed on one surface of the substrate is less than 10 nm, there may arise a problem that the carbon thin film has a drastically reduced durability. In addition, when the thickness of the carbon thin film formed on one surface of the substrate is more than 400 nm, the conductivity of the thin conductive film containing the carbon thin film may be deteriorated.

According to an embodiment of the present invention, the thickness of the carbon thin film formed on one surface of the substrate can be controlled by adjusting the degree of repetition of the process of generating friction between one surface of the substrate and one surface of the carbon structure. The degree of repetition of the process of sliding the base material 200 in the direction B parallel to one surface of the base material 200 as shown in FIG. 2 in a state where one surface of the above described carbon material is in contact with one surface of the base material, The thickness of the carbon thin film 300 formed on one side of the substrate 200 can be easily controlled.

Therefore, according to one embodiment of the present invention, the thickness of the carbon thin film formed on one surface of the substrate can be controlled by a simple method.

According to an embodiment of the present invention, the carbon structure may be graphite. Therefore, according to an embodiment of the present invention, compared with the conventional method of manufacturing a carbon-containing conductive thin film using expensive carbon nanotube (CNT), graphene, or the like, By using graphite, a carbon-containing conductive thin film can be realized, which can effectively reduce the manufacturing cost of the conductive thin film.

The method for fabricating a carbon-containing conductive thin film according to an embodiment of the present invention may further include patterning the surface of the carbon thin film. The conductive thin film including the carbon thin film may be transparent, and the transparent conductive thin film including the carbon thin film may be used as an electrode of a display device, a solar cell, a touch panel, or a heating layer of a transparent heat generating device. In order to apply the transparent conductive thin film to various fields, a pattern structure may be formed on the surface of the carbon thin film. For example, a pattern structure of a predetermined type can be formed on the surface of the carbon thin film using a CO2 laser or an Nd: YAG laser.

According to an embodiment of the present invention, when a direct current voltage of 4 V to 60 V is applied to the carbon thin film, the carbon thin film may generate heat at a temperature of 20 ° C or more and 100 ° C or less. Specifically, the carbon thin film may generate heat at a temperature of 20 ° C. or more and 80 ° C. or less, 40 ° C. or more and 70 ° C. or less, 60 ° C. or more and 80 ° C. or less, or 80 ° C. or more and 100 ° C. or less. It is possible to provide a transparent heat generating device using a conductive thin film including the carbon thin film which can generate heat at a temperature of 20 ° C to 100 ° C when a direct current voltage of 4 V to 60 V is applied as a heat generating layer .

Another embodiment of the present invention provides a carbon-containing conductive thin film produced by a method according to an embodiment of the present invention.

The carbon-containing conductive thin film according to another embodiment of the present invention includes a carbon thin film having excellent durability and conductivity, and can be applied to various fields. Specifically, the carbon-containing conductive thin film is transparent and may be a transparent conductive thin film, and may be used as an electrode of a display device, a solar cell, a touch panel, or as a heating layer of a transparent heating device.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: carbon structure
110: Carbon molecular layer
200: substrate
300: carbon thin film

Claims (8)

Preparing a carbon structure comprising at least two planar carbon molecular layers made of carbon atoms;
Positioning the carbon structure such that one side of the substrate and one side of the carbon structure face each other;
Contacting one surface of the carbon structure with one surface of the substrate; And
And forming a carbon thin film on one surface of the substrate by generating friction between one surface of the carbon structure and one surface of the substrate,
Wherein the plane of the carbon molecular layer is parallel to one surface of the carbon structure. The method according to claim 1,
Wherein the thickness of the carbon thin film is 10 nm or more and 400 nm or less. The method according to claim 1,
Wherein the step of contacting one surface of the carbon structure with the one surface of the substrate is performed by applying a pressure of 1 kPa or more and 1,000 kPa or less to the carbon structure so that one surface of the carbon structure is in contact with one surface of the substrate, Gt; The method according to claim 1,
Wherein the carbon structure is graphite. The method according to claim 1,
Wherein the substrate is glass or a resin film. The method according to claim 1,
Further comprising the step of patterning the surface of the carbon thin film. The method according to claim 1,
Wherein the carbon thin film generates heat at a temperature of 20 ° C to 100 ° C when a direct current voltage of 4 V to 60 V is applied to the carbon thin film. A carbon-containing conductive thin film produced by the method according to claim 1.

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