KR20190023038A - High power duty sputtering target and Cathode backing plate - Google Patents

High power duty sputtering target and Cathode backing plate Download PDF

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Publication number
KR20190023038A
KR20190023038A KR1020170108344A KR20170108344A KR20190023038A KR 20190023038 A KR20190023038 A KR 20190023038A KR 1020170108344 A KR1020170108344 A KR 1020170108344A KR 20170108344 A KR20170108344 A KR 20170108344A KR 20190023038 A KR20190023038 A KR 20190023038A
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South Korea
Prior art keywords
backing plate
sputtering target
sputtering
target
high power
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KR1020170108344A
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Korean (ko)
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이성우
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이성우
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a high power and high temperature endurable sputtering target and cathode backing plate for a coating wheel process of a vehicle using a sputtering method, capable of preventing use efficiency of a target from being deteriorated. According to the present invention, when a sputtering target (the length is equal to or greater than 1m), the sputtering target is divided, wherein a divided edge is obliquely processed by 30 to 45 degrees, thereby preventing the backing plate from being exposed during sputtering.

Description

스퍼터링 기법을 이용한 자동차용 코팅 휠 공정용 고전력 및 고온에 견디는 스퍼터링 타겟 및 캐소드 Backing plate { High power duty sputtering target and Cathode backing plate } BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a high power and high temperature sputtering target and a cathode backing plate for an automotive coating wheel process using a sputtering technique,

진공 증착, 코팅Vacuum deposition, coating

스퍼터링, 플라즈마Sputtering, plasma

자동차용 휠을 진공 챔버 ( 대기압 ~ 10^-5 mbar 이하 )의 진공 가변 챔버에Automotive wheels are placed in a vacuum chamber (atmospheric pressure ~ 10 ^ -5 mbar or less)

장입하고 아르곤 가스와 질소 가스를 투입하여 챔버 진공도를 10^-3 mbar로       And the argon gas and the nitrogen gas were introduced to adjust the chamber vacuum to 10 ^ -3 mbar

유지 후 챔버에 장착된 스퍼터링 캐소드에 20 ~ 50kW의 DC 전원을 인가하여 플라즈마를 형성 시키고 캐소드 후면의 마그네트 모듈로 플라즈마 장을 구속 하여 스퍼터링 타겟 (알루미늄, 티타늄 또는 니켈크롬 )에 아르곤 및 질소 입자가 전자기장 의 구속력으로 인한 충돌로 인하여 타겟 물질이 자동차용 휠에 코팅되어 지는 공정에서 아르곤은 플라즈마 장을 유지 시켜 주며 코팅 물질을 물리적인 충돌로 용사 되는 역활을 하며 질소는 용사되는 물질과 화 학결합하여 질화 된 금속이 자동차용 휠에 코팅 되어 지게 되는데 이러한 공 정에서 스퍼터링 캐소드 및 챔버 내부의 고온 ( 300 ~ 550 도)이 발생하여 스퍼터링 타겟의 열팽창 및 이로 인한 연속적인 공정 사용으로 인한 피로 파 괴 발생 및 스퍼터링 캐소드의 자력 감소 및 리크(Leak)가 발생하여 전기적 인 아킹 이 발생하게 된다. 이러한 전기적인 아킹은 스퍼터링시 거대 입자의 방출로 인하여 자동차용 휠의 표면 품질 저하 및 양산 품질 저하를 가져 오고 연속적인 아킹은 스퍼터링 타겟의 열변형을 초래하여 사용시간 및 횟수의 감 소를 초래하게 된다.       After holding, a DC power source of 20 to 50 kW is applied to a sputtering cathode mounted on the chamber to form a plasma, and a plasma field is restrained by a magnet module on the rear side of the cathode, so that argon and nitrogen particles are injected into the sputtering target (aluminum, titanium or nickel chrome) In the process of coating the target material on the automobile wheel due to the collision due to the binding force of argon, the argon maintains the plasma field and serves to spray the coating material in a physical collision. Nitrogen is chemically combined with the material to be sprayed, (300-550 degrees) in the sputtering cathode and the chamber is generated in this process. This causes thermal expansion of the sputtering target and fatigue fracture due to continuous process use due to the sputtering target and sputtering Cathode And electrical leakage arises due to the occurrence of electric arc. Such electrical arcing causes deterioration of surface quality and mass production quality of the automobile wheel due to the emission of large particles during sputtering, and continuous arcing causes thermal deformation of the sputtering target, resulting in reduction of the use time and frequency .

1.스퍼터링 타겟의 열팽창을 고려하여 각 타겟 별 부분 절단을 하여 팽창        1. Expansion by partial cutting for each target in consideration of thermal expansion of the sputtering target

크기 만큼 틈을 주되 타겟 후면 Back plate가 스퍼터 되지 않도록 측면을 사선으로 가공하여 아르곤이 Back plate로 침범하지 못하도록 함.        The back side of the target is not sputtered, but the sides are made oblique so that the argon can not penetrate the back plate.

(도면 1)       (Fig. 1)

2. 스퍼터링 캐소드의 냉각수 채널의 냉각수 흐름 부분을 개선하여 더 많은 2. By improving the cooling water flow portion of the cooling water channel of the sputtering cathode,

냉각수가 흐르고 냉각수 열교환이 잘 되도록 fin을 설치 함.Fins are installed so that coolant flows and coolant heat exchanges well.

(도면 2)(Figure 2)

1. 고 전력 스퍼터링 시 타겟의 열 변형으로 인한 타겟 사용 효율 저하 방지1. Prevention of deterioration of target use efficiency due to thermal deformation of target during high-power sputtering

스퍼터링 타겟의 고열로 인한 열팽창에도 타겟 조립 클램프 및 Backing Target assembly clamp and backing for thermal expansion due to high temperature of sputtering target

plate에 영향을 미치지 않에 냉각수 Leak 발생 방지Prevents cooling water leaks without affecting plate

2. 냉각수 열교환 개선으로 인한 열 변형 최소화 및 Backing plate의 구조2. Minimization of thermal deformation due to improvement of cooling water heat exchange and structure of backing plate

적 강도 개선   Reduced Strength

(도면 1 ) : 스퍼터링 캐소드의 열 변형 및 backing plate 노출 방지 구조의 스퍼터링 타겟
(도면 2) : Backing Plate의 냉각 finn 구조 (FIG. 1): Sputtering target with thermal deformation of the sputtering cathode and backing plate exposure prevention structure
(Figure 2): Cooling finn structure of backing plate

1.기존 스퍼터링 타겟을 절단하여 사선으로 측면을 가공하여 (도면1)과 같이1. Cutting the existing sputtering target and machining the sides with oblique lines (Figure 1)

열팽창 크기를 고려하여 틈을 만들어 준다.It creates a gap considering the size of thermal expansion.

2. Backing plate 판 내부의 두께를 기존 3mm 에서 9mm로 높이고 내부를 2. Increase the backing plate thickness from 9mm to 3mm.

포켓가공하여 열 교환이 잘 될 수 있도록 Finn을 가공한다.   Finn is processed so that heat exchange can be done by pocketing.

Claims (2)


스퍼터링 타겟(길이 1m 이상) 을 제조시 타겟을 분활 하되 분할된 모서리를
30 ~ 45도 사선 가공하여 Backing plate가 스퍼터링시 노출되지 않도록 하는 구조(도면1)
Sputtering target (length of 1 m or more) is divided into two parts:
30 ~ 45 degree angle machining to prevent the backing plate from being exposed during sputtering (figure 1)
스퍼터링 캐소드 Backing plate 내부에 (도면2)와 같이 finn 을 각각 3개
(폭 3mm 높이 5mm이하)을 포켓 가공하여 냉각수로 열전달을 최대화
하는 구조


Sputtering Cathode As shown in Figure 2, inside the backing plate, three finn
(Width 3mm, height 5mm or less) is pocked to maximize heat transfer with cooling water
Structure


KR1020170108344A 2017-08-27 2017-08-27 High power duty sputtering target and Cathode backing plate KR20190023038A (en)

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KR1020170108344A KR20190023038A (en) 2017-08-27 2017-08-27 High power duty sputtering target and Cathode backing plate

Publications (1)

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KR20190023038A true KR20190023038A (en) 2019-03-07

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