KR20190020572A - 다공성 레이어가 구비된 정전척 - Google Patents
다공성 레이어가 구비된 정전척 Download PDFInfo
- Publication number
- KR20190020572A KR20190020572A KR1020170105695A KR20170105695A KR20190020572A KR 20190020572 A KR20190020572 A KR 20190020572A KR 1020170105695 A KR1020170105695 A KR 1020170105695A KR 20170105695 A KR20170105695 A KR 20170105695A KR 20190020572 A KR20190020572 A KR 20190020572A
- Authority
- KR
- South Korea
- Prior art keywords
- electrostatic chuck
- porous layer
- main body
- cooling
- refrigerant gas
- Prior art date
Links
- 239000003507 refrigerant Substances 0.000 claims abstract description 31
- 238000009423 ventilation Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical group 0.000 claims description 4
- 238000001816 cooling Methods 0.000 abstract description 38
- 230000003068 static effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 9
- 239000002826 coolant Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- -1 alumina Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
도 2는 본 발명의 실시예에 따른 다공성 레이어와 차폐용 관체의 분리 사시도.
100: 유전체 본체 120: 베이스
200: 전극 300: 다공성 레이어
310: 홀
400, 401, 402: 제1 통기관
500: 메사 패턴 510: 골
600: 제2 통기관 620: 차폐용 관체
630: 측면 차폐수단
700A, 700B: 유량 조절기
W: 웨이퍼
Claims (9)
- 유전체 본체; 본체 내부에 매립되는 패턴 전극을 포함하는 정전척에 있어서, 상기 본체 하부에서 상부 표면에 평행하게 배치되어 결합되는 다공성 레이어를 더 포함하고, 상기 다공성 레이어로 냉매가스의 출입을 위한 제1 통기관이 구비된 것을 특징으로 하는 정전척.
- 제1항에 있어서, 상기 유전체 본체 하부에 배치되는 베이스를 더 포함하고, 상기 다공성 레이어는 상기 유전체 본체와 베이스 사이에 배치되는 본딩 결합되는 것을 특징으로 하는 정전척.
- 제1항에 있어서, 상기 정전척 상부 표면에 냉매가스의 유로를 위한 메사 패턴이 구비되고, 상기 본체 내부를 통과하여 상기 메사 패턴으로 연통되는 제2 통기관이 구비된 것을 특징으로 하는 정전척.
- 제3항에 있어서, 상기 제2 통기관은 상기 다공성 레이어를 관통하도록 형성되되, 상기 다공성 레이어외 제2 통기관은 차폐되는 것을 특징으로 하는 정전척.
- 제4항에 있어서, 상기 다공성 레이어를 통과하는 제2 통기관 부분에 차폐용 관체가 제공되는 것을 특징으로 하는 정전척.
- 제4항에 있어서, 상기 다공성 레이어를 통과하는 제2 통기관 부분의 내측에 차폐용 박막이 형성된 것을 특징으로 하는 정전척.
- 제4항에 있어서, 상기 다공성 레이어를 통과하는 제2 통기관 부분에 차폐용 본드가 형성되는 것을 특징으로 하는 정전척.
- 제1 항에 있어서, 상기 다공성 레이어는 금속산화물 또는 세라믹인 것을 특징으로 하는 정전척.
- 제1항에 있어서, 상기 다공성 레이어의 기공률은 40 ~ 50 %인 것을 특징으로 하는 정전척.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170105695A KR101986668B1 (ko) | 2017-08-21 | 2017-08-21 | 다공성 레이어가 구비된 정전척 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170105695A KR101986668B1 (ko) | 2017-08-21 | 2017-08-21 | 다공성 레이어가 구비된 정전척 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190020572A true KR20190020572A (ko) | 2019-03-04 |
KR101986668B1 KR101986668B1 (ko) | 2019-09-30 |
Family
ID=65759901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170105695A KR101986668B1 (ko) | 2017-08-21 | 2017-08-21 | 다공성 레이어가 구비된 정전척 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101986668B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113808928A (zh) * | 2021-08-04 | 2021-12-17 | 北京华卓精科科技股份有限公司 | 一种激光退火方法和具备自主冷却功能的多孔吸盘 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990039626U (ko) * | 1998-04-15 | 1999-11-15 | 김영환 | 웨이퍼 건식각장비의 정전척 구조 |
KR20050021596A (ko) | 2003-08-19 | 2005-03-07 | 주성엔지니어링(주) | 정전척의 냉각 베이스 |
KR100858780B1 (ko) * | 2004-12-01 | 2008-09-17 | 가부시끼가이샤 퓨처 비전 | 피처리 기판의 표면 처리 장치 |
KR101693187B1 (ko) * | 2013-03-29 | 2017-01-05 | 토토 가부시키가이샤 | 정전척 |
-
2017
- 2017-08-21 KR KR1020170105695A patent/KR101986668B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990039626U (ko) * | 1998-04-15 | 1999-11-15 | 김영환 | 웨이퍼 건식각장비의 정전척 구조 |
KR20050021596A (ko) | 2003-08-19 | 2005-03-07 | 주성엔지니어링(주) | 정전척의 냉각 베이스 |
KR100858780B1 (ko) * | 2004-12-01 | 2008-09-17 | 가부시끼가이샤 퓨처 비전 | 피처리 기판의 표면 처리 장치 |
KR101693187B1 (ko) * | 2013-03-29 | 2017-01-05 | 토토 가부시키가이샤 | 정전척 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113808928A (zh) * | 2021-08-04 | 2021-12-17 | 北京华卓精科科技股份有限公司 | 一种激光退火方法和具备自主冷却功能的多孔吸盘 |
Also Published As
Publication number | Publication date |
---|---|
KR101986668B1 (ko) | 2019-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7169319B2 (ja) | ガス孔に開口縮小プラグを有する大電力静電チャック | |
KR101066974B1 (ko) | 플라즈마처리장치 및 플라즈마처리방법 | |
JP7551765B2 (ja) | 基板処理チャンバにおける処理キットのシース及び温度制御 | |
US9972520B2 (en) | Aluminum nitride electrostatic chuck used in high temperature and high plasma power density semiconductor manufacturing process | |
TWI358785B (ko) | ||
US20180076048A1 (en) | Method of etching silicon oxide and silicon nitride selectively against each other | |
CN105355585B (zh) | 基板处理装置的基板载置台 | |
US20100122774A1 (en) | Substrate mounting table and substrate processing apparatus having same | |
KR102718997B1 (ko) | 무선 주파수 커플링을 갖는 고 전력 정전 척 설계 | |
JP2022020732A (ja) | 極めて均一性が高い加熱基板支持アセンブリ | |
JP2011519486A (ja) | ガスベアリング静電チャック | |
JP2007005491A (ja) | 電極アッセンブリ及びプラズマ処理装置 | |
KR102702944B1 (ko) | 프로세스 키트의 시스 및 온도 제어 | |
US20090223449A1 (en) | Cover part, process gas diffusing and supplying unit, and substrate processing apparatus | |
CN101471275B (zh) | 一种被处理体的保持装置 | |
US20240404796A1 (en) | Holding device | |
US11328907B2 (en) | Electrostatic chuck | |
JP2023035856A (ja) | 静電チャック、および処理装置 | |
JP4390629B2 (ja) | 静電吸着装置およびプラズマ処理装置 | |
US20060037702A1 (en) | Plasma processing apparatus | |
JP2004014752A (ja) | 静電チャック、被処理体載置台およびプラズマ処理装置 | |
KR20190020572A (ko) | 다공성 레이어가 구비된 정전척 | |
US11302559B2 (en) | Electrostatic chuck | |
US12074014B2 (en) | Electrostatic chuck and processing apparatus | |
KR20180078067A (ko) | 하이브리드 바이폴라 정전척 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20170821 |
|
PA0201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20180927 Patent event code: PE09021S01D |
|
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20190326 |
|
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20190531 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20190531 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20220210 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20230313 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20240313 Start annual number: 6 End annual number: 6 |