KR20190020112A - Adhesive film for semiconductor wafer processing - Google Patents

Abstract

The adhesive film 100 for semiconductor wafer processing of the present invention is provided with a base layer 10, an antistatic layer 30 and a tacky resin layer 40 in this order and protects the surface of the semiconductor wafer or protects the semiconductor wafer It is used for fixing. The adhesive resin layer 40 includes an ion conductive additive.

Description

Adhesive film for semiconductor wafer processing

The present invention relates to a pressure-sensitive adhesive film for semiconductor wafer processing.

In the process of grinding or cutting a semiconductor wafer in the manufacturing process of the semiconductor device, the adhesive film is attached to the semiconductor wafer in order to fix the semiconductor wafer or prevent damage to the semiconductor wafer.

In general, a film obtained by laminating an ultraviolet curable adhesive resin layer on a base film is used for such a pressure-sensitive adhesive film. This adhesive film is irradiated with ultraviolet rays, and the adhesive resin layer is crosslinked to lower the adhesive force of the adhesive resin layer, so that the adhesive film can be easily peeled off from the semiconductor wafer.

On the other hand, in a manufacturing process of a semiconductor device using such a viscous film, static electricity called peeling electrification sometimes occurs when the adhesive film is peeled from the semiconductor wafer. A circuit formed on the semiconductor wafer is broken (electrostatic breakdown) due to the static electricity generated in this way, and foreign matter such as dust adheres to the circuit formed on the semiconductor wafer in some cases.

Particularly, in recent years, with the increase in the density of the semiconductor wafers and the narrow pitch of the wirings, the semiconductor wafers tend to be more susceptible to static electricity than ever.

In view of such circumstances, it has been desired in recent years to further improve the antistatic performance of a pressure-sensitive adhesive film used for fixing or damaging a semiconductor wafer in the process of manufacturing a semiconductor device.

As a technique related to such a pressure-sensitive adhesive film for semiconductor wafer processing, there is listed, for example, a patent document 1 (Japanese Patent Laid-Open Publication No. 2011-210944).

Patent Document 1 discloses a pressure-sensitive adhesive tape comprising a base film and a photocurable pressure-sensitive adhesive layer, wherein an antistatic layer containing a conductive polymer on at least one side of the base film, a photopolymerizable unsaturated bond in the molecule of the base polymer Wherein the surface resistivity of the pressure-sensitive adhesive layer side before and after the UV curing is 1 × 10 ⁶ to 5 × 10 ¹² Ω / □ and the thickness of the pressure-sensitive adhesive layer is 20 to 250 μm, and the adhesive tape is applied to the silicon mirror wafer Wherein the pressure-sensitive adhesive layer for antistatic semiconductor processing is characterized in that the pressure-sensitive adhesive layer has an ultraviolet-curing 90 degree peel adhesion (in accordance with JIS Z 0237: peeling speed: 50 mm / min) of 0.15 to 0.25 N / have.

Japanese Patent Application Laid-Open No. 2011-210944

As described above in the Background of the Invention, in recent years, the technical level required for the static electricity countermeasure of the pressure-sensitive adhesive film for semiconductor wafer processing has been gradually increased.

According to the studies of the present inventors, it has been found that the antistatic property is not sufficiently satisfied in a pressure-sensitive adhesive film in which a base film, an antistatic layer and a pressure-sensitive adhesive layer are laminated in this order as described in Patent Document 1.

More specifically, it has been found that the pressure-sensitive adhesive film as described in Patent Document 1 significantly increases the saturation voltage of the pressure-sensitive adhesive layer after ultraviolet curing, and the antistatic property is greatly deteriorated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and has an object of providing a semiconductor device which is excellent in antistatic property after ultraviolet curing and can suppress the amount of static electricity generated when peeling off from a semiconductor wafer, And an adhesive film for wafer processing.

Means for Solving the Problems The present inventors have conducted intensive investigations in order to achieve the above object. As a result, in the pressure-sensitive adhesive film comprising the base layer, the antistatic layer and the pressure-sensitive adhesive resin layer in this order, the ionic conductivity additive is added to the pressure-sensitive adhesive resin layer to suppress the rise of the saturation voltage of the pressure- And the present invention has been accomplished.

According to the present invention, there is provided a pressure-sensitive adhesive film for semiconductor wafer processing as described below.

[One]

An adhesive film used for protecting a surface of a semiconductor wafer or fixing a semiconductor wafer,

A base layer, an antistatic layer, and a tacky resin layer in this order,

Wherein the adhesive resin layer comprises an ion conductive additive.

[2]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to [1] above,

Wherein the adhesive resin layer comprises an ultraviolet curable adhesive resin.

[3]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to [2] above,

Wherein the content of the ion conductive additive in the pressure-sensitive adhesive resin layer is 0.01 part by mass or more and 10 parts by mass or less based on 100 parts by mass of the ultraviolet-curable pressure-sensitive adhesive resin.

[4]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [3] above,

Wherein the ion conductive additive comprises at least one selected from a cationic surfactant, an anionic surfactant, a nonionic surfactant, a positive surfactant, and an ionic liquid.

[5]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [4] above,

Wherein the thickness of the pressure-sensitive adhesive resin layer is not less than 5 占 퐉 and not more than 550 占 퐉.

[6]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [5] above,

Which is a back grind tape.

[7]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [6]

Wherein the antistatic layer comprises a conductive polymer.

[8]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [7]

Further comprising a concavo-convex absorbent resin layer between the substrate layer and the antistatic layer.

[9]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [8]

The saturation voltage V ₁ of the surface of the pressure-sensitive adhesive resin layer after ultraviolet curing measured by the following method is 1.0 kV or less.

(Way)

The viscous resin layer was irradiated with ultraviolet rays at a wavelength of 365 nm at an irradiation intensity of 100 mW / cm 2 using a high-pressure mercury lamp under an environment of 25 캜 to cure the adhesive resin layer at an ultraviolet dose of 1080 mJ / cm 2. Subsequently, the voltage was applied to the surface of the adhesive resin layer for 30 seconds under the conditions of an applied voltage of 10 kV and a distance of 20 mm between the sample and the electrode at 25 DEG C and 50% RH. Then, the saturated band on the surface of the adhesive resin layer And calculates the voltage V ₁ .

[10]

In the pressure-sensitive adhesive film for semiconductor wafer processing according to any one of [1] to [9] above,

A pressure-sensitive adhesive film for semiconductor wafer processing, which has a tack force on the surface of the pressure-sensitive adhesive resin layer after ultraviolet curing, measured by the following method, of 0.1 N / cm 2 or less.

(Way)

The adhesive resin layer of the pressure-sensitive adhesive film was laminated on the polyimide film, and ultraviolet rays having a wavelength of 365 nm were irradiated from the base layer side of the pressure-sensitive adhesive film to the polyimide film using a high-pressure mercury lamp under an environment of 25 캜, at an irradiation intensity of 100 mW / / Cm < 2 > to cure the adhesive resin layer. Then, the polyimide film was peeled off from the adhesive film, and a probe having a diameter of 5 mm and a surface of the adhesive resin layer were brought into contact with each other at a speed of 10 mm / sec using a probe tack tester as a measuring device. And then the probe is peeled from the surface of the adhesive resin layer in the vertical direction at a speed of 10 mm / sec. The tack force of the surface of the adhesive resin layer is measured.

INDUSTRIAL APPLICABILITY According to the present invention, there is provided a semiconductor wafer processing adhesive film which is excellent in antistatic property after UV curing, can suppress the amount of static electricity generated when peeling off from a semiconductor wafer, and can stably obtain a semiconductor component with excellent quality can do.

The foregoing and other objects, features and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments thereof with reference to the accompanying drawings.
1 is a cross-sectional view schematically showing an example of the structure of a pressure-sensitive adhesive film for semiconductor wafer processing according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing an example of the structure of a pressure-sensitive adhesive film for semiconductor wafer processing according to an embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and a description thereof will be omitted. Also, the drawing is a schematic view and does not coincide with the actual dimensional ratio. The numerical ranges " A to B " indicate A or more and B or less unless otherwise specified. In the present embodiment, " (meth) acryl " means both acrylic, methacrylic or acrylic and methacrylic.

1 and 2 are cross-sectional views schematically showing an example of the structure of a pressure-sensitive adhesive film for semiconductor wafer 100 according to an embodiment of the present invention.

1, the adhesive film 100 for semiconductor wafer processing according to the present embodiment (hereinafter also referred to as "adhesive film 100") comprises a substrate layer 10, an antistatic layer 30, And a sticky resin layer 40 in this order, and is used for protecting the surface of the semiconductor wafer or fixing the semiconductor wafer. The adhesive resin layer 40 includes an ion conductive additive.

As described above, in recent years, the level of technology required for the static electricity countermeasure of the adhesive film for semiconductor wafer processing is increasing. Particularly, in the case of using a semiconductor wafer in which a bump electrode such as a solder bump or a copper filler bump is formed on a high-density circuit of a semiconductor wafer on which a high-density circuit is arranged, a circuit including a bump electrode This tendency is more conspicuous because there is a tendency that destruction (short) of the substrate is likely to occur.

For this reason, there has been a demand for realizing a pressure-sensitive adhesive film for semiconductor wafer processing which is more excellent in antistatic property.

Here, according to the studies of the present inventors, it has been found that the antistatic property is not sufficiently satisfied in a pressure-sensitive adhesive film in which a base film, an antistatic layer and a pressure-sensitive adhesive layer are laminated in this order as described in Patent Document 1 .

More specifically, it has been found that the pressure-sensitive adhesive film as described in Patent Document 1 significantly increases the saturation voltage of the pressure-sensitive adhesive layer after ultraviolet curing, and the antistatic property is greatly deteriorated.

Means for Solving the Problems The present inventors have conducted intensive investigations in order to achieve the above object. As a result, in the pressure-sensitive adhesive film comprising the base layer, the antistatic layer and the pressure-sensitive adhesive resin layer in this order, the ionic conductivity additive is added to the pressure-sensitive adhesive resin layer to suppress the rise of the saturation voltage of the pressure- For the first time.

That is, the adhesive layer for semiconductor wafer processing according to the present embodiment has excellent antistatic properties after ultraviolet curing and can suppress the amount of static electricity generated when peeling off from the semiconductor wafer, A semiconductor component having excellent quality can be stably obtained.

In the pressure-sensitive adhesive film 100 according to the present embodiment, the saturation voltage V ₁ of the adhesive resin layer 40 after ultraviolet curing, which is measured by the following method, is preferably 1.0 kV or less, more preferably 0.5 kV or less to be.

(Way)

The adhesive resin layer 40 is irradiated with an ultraviolet ray at an irradiation intensity of 1080 mJ / cm 2 at an irradiation intensity of 100 mW / cm 2 using a high-pressure mercury lamp under the environment of 25 ° C to photo-cure the adhesive resin layer 40. Subsequently, a voltage was applied to the surface of the adhesive resin layer 40 for 30 seconds under the conditions of an applied voltage of 10 kV and a distance of 20 mm between the sample and the electrode at 25 DEG C and 50% RH. The voltage of the adhesive resin layer 40 was measured according to JIS L1094 The surface saturation voltage (V ₁ ) is calculated.

By setting the saturation voltage V ₁ of the adhesive resin layer 40 after ultraviolet curing to the upper limit value or less, the antistatic property against the surface of the semiconductor wafer can be further improved.

The lower limit value of the saturation voltage V ₁ of the adhesive resin layer 40 after ultraviolet curing is, for example, 0.01 kV or more, preferably 0 kV.

In the present embodiment, by appropriately adjusting, for example, the types and blending ratios of the components constituting the adhesive resin layer 40, the thickness of the adhesive resin layer 40, and the like, it is possible to control the saturation vs. voltage V ₁ to the upper limit value or less.

Among these, for example, be adhesive resin layer 40 of the ion conductive additive or absence or a saturated logarithmic value desired voltage V ₁ range of the thickness and the like of the adhesive resin layer 40, be tacky after UV curing resin layer 40 of the As shown in Fig.

For example, if the content of the ion conductive additive in the adhesive resin layer 40 is increased or the thickness of the adhesive resin layer 40 is made thinner, the saturation voltage V ₁ can be lowered.

In the pressure-sensitive adhesive film 100 according to the present embodiment, when the saturation voltage at the surface of the adhesive resin layer 40 after ultraviolet curing, which is measured by the following method, is V ₂ , V ₁ / V ₂ is preferably Is 5.0 or less, more preferably 3.0 or less, and further preferably 2.5 or less. When V ₁ / V ₂ is equal to or less than the upper limit value, the amount of static electricity generated when peeling from the semiconductor wafer can be more stably suppressed, so that a semiconductor component with superior quality can be obtained more stably.

(Way)

The adhesive resin layer 40 is irradiated with ultraviolet light having a wavelength of 365 nm at an irradiation intensity of 100 mW / cm < 2 > and an amount of ultraviolet light of 200 mJ / cm < 2 > using a high-pressure mercury lamp under an environment of 25 deg. Subsequently, a voltage was applied to the surface of the adhesive resin layer 40 for 30 seconds under the conditions of an applied voltage of 10 kV and a distance of 20 mm between the sample and the electrode at 25 DEG C and 50% RH. The voltage of the adhesive resin layer 40 was measured according to JIS L1094 And the saturation voltage (V ₂ ) of the surface is calculated.

In the pressure-sensitive adhesive film 100 according to the present embodiment, the half-life period of the saturation voltage V ₁ of the adhesive resin layer 40 after ultraviolet curing is preferably 20 seconds or less, more preferably 10 seconds or less, Preferably 5 seconds or less, and particularly preferably 1 second or less.

Here, until the measurement of the half-life refers to a saturated electrification voltage V ₁ of saturated electrification voltage V _1, and then terminate the application of a voltage to the surface of the adhesive resin layer 40, the value of the large voltage drop by half It says time.

Since the saturation voltage V ₁ of the adhesive resin layer 40 after ultraviolet curing is equal to or less than the upper limit value, the short-time half life can be realized and the pressure-sensitive adhesive film (100) 100).

In the pressure-sensitive adhesive film 100 according to the present embodiment, the surface tension of the adhesive resin layer 40 after ultraviolet curing, measured by the following method, is preferably 0.1 N / cm 2 or less, more preferably 0.05 N / And more preferably 0.01 N / cm 2 or less.

Peeling off the adhesive film 100 from the surface of the semiconductor wafer becomes easier if the tacking force of the surface of the adhesive resin layer 40 after the ultraviolet curing is not more than the upper limit value and a part of the adhesive resin layer 40 It is possible to further suppress the occurrence of a problem in the semiconductor wafer due to the sticking of the adhesive film 100 or the peeling of the adhesive film 100.

(Way)

The adhesive resin layer 40 of the adhesive film 100 is bonded to a polyimide film (product name: Capton 200H, manufactured by DuPont-DuPont), and the pressure-sensitive adhesive film 100 is peeled from the base layer 10 side of the pressure- Using a mercury lamp, the adhesive resin layer 40 is photo-cured by irradiating ultraviolet rays having a wavelength of 365 nm at an irradiation intensity of 100 mW / cm 2 and an ultraviolet ray intensity of 1080 mJ / cm 2. Then, the polyimide film was peeled off from the adhesive film 100, and a polyimide film was peeled off from the adhesive film 100 using a probe tack tester (for example, " TESTING MACHINES Inc. Model 80-02-01 " Was contacted with the surface of the adhesive resin layer 40 at a speed of 10 mm / sec and contacted with a contact load of 0.98 N / cm 2 for 10 seconds, and then the probe was contacted with the surface of the adhesive resin layer 40 at a speed of 10 mm / The tack force on the surface of the adhesive resin layer 40 is measured.

The total thickness of the adhesive film 100 according to the present embodiment is preferably 25 占 퐉 or more and 1000 占 퐉 or less, and more preferably 50 占 퐉 or more and 600 占 퐉 or less, in view of balance between mechanical properties and handling properties.

The adhesive film 100 according to the present embodiment is used for protecting the surface of a semiconductor wafer or for fixing a semiconductor wafer in the process of manufacturing a semiconductor device and more specifically, And is suitably used as a back-grind tape used for protecting the circuit-formed surface (that is, the circuit surface including the circuit pattern) of the semiconductor wafer in the backgrind process.

In the case where the semiconductor wafer to be bonded is a semiconductor wafer having a fine wiring circuit including bump electrodes on its surface, the circuit formed on the semiconductor wafer is broken due to the static electricity generated when the adhesive film is peeled from the semiconductor wafer The electrostatic breakdown or the like tends to occur. However, the use of the adhesive film 100 according to the present embodiment makes it possible to more reliably suppress electrostatic breakdown and the like even for a semiconductor wafer having bump electrodes formed on such a surface.

The semiconductor wafer to which the adhesive film 100 according to the present embodiment can be applied is not particularly limited and may be a silicon wafer or the like.

Next, each layer constituting the adhesive film 100 for semiconductor wafer processing according to the present embodiment will be described.

(Substrate layer)

The base layer 10 is a layer provided for the purpose of improving the handling properties, mechanical properties, and heat resistance of the PSA film 100.

The base layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding an external force applied when processing a semiconductor wafer, and for example, a resin film can be exemplified.

As the resin constituting the resin film, known thermoplastic resins can be used. For example, polyolefins such as polyethylene, polypropylene, poly (4-methyl-1-pentene), poly (1-butene) and the like; Polyesters such as polyethylene terephthalate and polybutylene terephthalate; Polyamides such as nylon-6, nylon-66, and polymethoxyl adipamide; Polyacrylates; Polymethacrylate; Polyvinyl chloride; Polyetherimide; Ethylene-vinyl acetate copolymer; Polyacrylonitrile; Polycarbonate; polystyrene; Ionomers; Polysulfone; Polyethersulfone; Polyphenylene ether, and the like.

Among these, from the viewpoint of semiconductor wafer protection, one or two or more selected from polypropylene, polyethylene terephthalate, polyamide, and ethylene-vinyl acetate copolymer are preferable, and polyethylene terephthalate, ethylene-vinyl acetate copolymer And one or more selected are more preferable.

The substrate layer 10 may be a single layer or two or more layers.

The resin film used for forming the base layer 10 may be a stretched film or a film stretched in the uniaxial or biaxial direction, but may be a film stretched in the direction of improving the mechanical strength of the base layer 10 It is preferable that the film is a film stretched in a uniaxial direction or a biaxial direction.

The thickness of the base layer 10 is preferably 10 占 퐉 or more and 500 占 퐉 or less, more preferably 20 占 퐉 or more and 300 占 퐉 or less, and still more preferably 25 占 퐉 or more and 150 占 퐉 or less, from the viewpoint of obtaining good film characteristics.

The base layer 10 may be subjected to a surface treatment to improve adhesion with other layers. Specifically, corona treatment, plasma treatment, undercoating treatment, primer coating treatment, and the like may be performed.

(Adhesive resin layer)

The adhesive film 100 according to the present embodiment is provided with a pressure-sensitive adhesive resin layer 40.

The adhesive resin layer 40 is a layer that comes into contact with and adheres to the surface of the semiconductor wafer when the adhesive film 100 for semiconductor wafer processing is attached to the semiconductor wafer.

The adhesive resin layer 40 is preferably a layer formed by an ultraviolet curing type pressure-sensitive adhesive containing an ultraviolet curing type pressure-sensitive adhesive resin.

Examples of the ultraviolet curable pressure sensitive adhesive include (meth) acrylic pressure sensitive adhesives, silicone pressure sensitive adhesives, and urethane pressure sensitive adhesives.

The (meth) acrylic pressure sensitive adhesive contains, as an essential component, a (meth) acrylic pressure sensitive adhesive resin as an ultraviolet curable pressure sensitive adhesive resin. The silicone-based pressure-sensitive adhesive contains, as an essential component, a silicone-based pressure-sensitive adhesive resin as an ultraviolet-curable pressure-sensitive adhesive resin. The urethane-based pressure-sensitive adhesive contains, as an essential component, a urethane-based pressure-sensitive adhesive resin as an ultraviolet curable pressure-sensitive adhesive resin.

Of these, a (meth) acrylic adhesive is preferred from the standpoint of facilitating adjustment of the adhesive force.

The (meth) acrylic pressure sensitive adhesive includes a (meth) acrylic adhesive resin having a polymerizable carbon-carbon double bond in its molecule, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds in the molecule, and a photoinitiator, Acrylic pressure sensitive adhesive resin, and a pressure sensitive adhesive obtained by crosslinking the (meth) acrylic pressure sensitive adhesive resin with a crosslinking agent, if necessary.

The (meth) acrylic adhesive resin having a polymerizable carbon-carbon double bond in the molecule is specifically obtained as follows. First, a copolymerizable monomer having an ethylenic double bond and a functional group (P) is copolymerized. Subsequently, the functional group (P) contained in the copolymer is reacted with a monomer having a functional group (Q) capable of causing addition reaction, condensation reaction or the like with the functional group (P) while leaving a double bond in the monomer, A polymerizable carbon-carbon double bond is introduced into the copolymer molecule.

Examples of the monomer having an ethylenic double bond include acrylic acid alkyl esters such as methyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, butyl (meth) acrylate and ethyl Ester monomers, vinyl esters such as vinyl acetate, monomers having ethylenic double bonds such as (meth) acrylonitrile, (meth) acrylamide and styrene.

Examples of the copolymerizable monomer having the functional group (P) include (meth) acrylic acid, maleic acid, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, ) Acryloyloxyethyl isocyanate and the like. One of these may be used alone or two or more of them may be used in combination. The proportion of the monomer having an ethylenic double bond and the copolymerizable monomer having a functional group (P) is preferably 30 to 1% by mass relative to 70 to 99% by mass of the former. More preferably, the latter is 20 to 5% by mass relative to 80 to 95% by mass of the former.

Examples of the monomer having the functional group (Q) include the same monomer as the copolymerizable monomer having the functional group (P).

As a combination of a functional group (P) and a functional group (Q) which are reacted when a polymerizable carbon-carbon double bond is introduced into a copolymer of a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) An epoxy group, a carboxyl group and an aziridyl group, and a hydroxyl group and an isocyanate group. Further, any reaction may be used as far as it is a reaction capable of easily introducing a polymerizable carbon-carbon double bond such as a condensation reaction of a carboxylic acid group and a hydroxyl group, without being limited to an addition reaction.

Examples of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetraacrylate, pentaerythritol Tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like. These may be used alone or in combination of two or more. The amount of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass, more preferably 5 to 20 parts by mass, per 100 parts by mass of the (meth) acrylic adhesive resin. 18 parts by mass.

Examples of the photoinitiator include benzoin, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl Ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one and the like. These may be used alone or in combination of two or more. The amount of the photoinitiator to be added is preferably 0.1 to 15 parts by mass, more preferably 5 to 10 parts by mass, based on 100 parts by mass of the (meth) acrylic adhesive resin.

A crosslinking agent may be added to the ultraviolet curable pressure sensitive adhesive. Examples of the crosslinking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether and diglycerol polyglycidyl ether, tetramethylol methane-tri- N'-diphenylmethane-4,4'-bis (1-aziridine carboxamide), N, N'-diphenylmethane- Aziridine compounds such as hexamethylene-1,6-bis (1-aziridine carboxamide), and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate and polyisocyanate. The ultraviolet curable pressure sensitive adhesive may be any of a solvent type, an emulsion type, and a hot melt type.

The content of the crosslinking agent is usually in a range such that the number of functional groups in the crosslinking agent is not more than the number of functional groups in the (meth) acrylic adhesive resin. However, it may be contained in excess as required, for example, in the case where a new functional group is generated in the crosslinking reaction or when the crosslinking reaction is slow.

The content of the crosslinking agent in the (meth) acrylic pressure-sensitive adhesive is preferably 0.1 part by mass or more and 15 parts by mass or less per 100 parts by mass of the (meth) acrylic adhesive resin from the viewpoint of improving the balance with heat resistance and adhesion of the pressure- .

The adhesive resin layer 40 according to the present embodiment includes an ion conductive additive. As a result, the antistatic property of the adhesive resin layer 40 can be improved. In addition, it is possible to suppress an increase in saturation voltage of the PSA film 100 after ultraviolet curing.

Examples of the ion conductive additives include cationic surfactants, anionic surfactants, nonionic surfactants, amphoteric surfactants, and ionic liquids. From the viewpoint of further improving the antistatic property of the adhesive resin layer 40, at least one species selected from a cationic surfactant and an anionic surfactant is preferable, and a cationic surfactant is more preferable.

Examples of the cationic surfactant include dodecyltrimethylammonium chloride, tetradecyldimethylbenzylammonium chloride, cetyldimethylbenzylammonium chloride, stearyldimethylbenzylammonium chloride, tetradecyltrimethylammonium chloride, hexadecyltrimethylammonium chloride, octadecyltrimethyl Ammonium chloride, dodecyldimethylammonium chloride, ditetradecyldimethylammonium chloride, dihexadecyldimethylammonium chloride, dioctadecyldimethylammonium chloride, dodecylbenzyldimethylammonium chloride, hexadecylbenzyldimethylammonium chloride, octadecylbenzyldimethylammonium chloride , Palmityl trimethyl ammonium chloride, oleyl trimethyl ammonium chloride, dipalmityl benzyl methyl ammonium chloride, and dioleyl benzyl methyl ammonium chloride.

Examples of the cationic surfactant include a quaternary ammonium salt or an amine salt type, and a quaternary ammonium salt is preferable.

Among them, at least one member selected from tetradecyldimethylbenzylammonium chloride, cetyldimethylbenzylammonium chloride and stearyldimethylbenzylammonium chloride is preferable.

Examples of the anionic surfactant include alkyldiphenyl ether disulfonate salts such as diammonium dodecyldiphenyl ether disulfonate, sodium dodecyl diphenyl ether disulfonate, calcium dodecyl diphenyl ether disulfonate and sodium alkyl diphenyl ether disulfonate ; Alkylbenzene sulfonic acid salts such as sodium dodecylbenzenesulfonate and ammonium dodecylbenzenesulfonate; Alkyl sulfuric acid ester salts such as sodium lauryl sulfate and ammonium lauryl sulfate; Aliphatic carboxylic acid salts such as sodium fatty acid and potassium oleate; Sulfuric acid ester salts containing polyoxyalkylene units (for example, polyoxyethylene alkyl ether sulfate sulfuric acid ester salts such as sodium polyoxyethylene alkyl ether sulfate and ammonium polyoxyethylene alkyl ether sulfate, sodium polyoxyethylene alkylphenyl ether sulfate, polyoxyethylene Polyoxyethylene alkylphenyl ether sulfuric acid ester salts such as ammonium alkylphenyl ether sulfate and the like; polyoxyethylene polycyclic phenyl ether sulfuric acid ester salts such as polyoxyethylene polycyclic phenyl ether sulfuric acid sodium salt and polyoxyethylene polycyclic phenyl ether sulfuric acid ammonium salt; Naphthalenesulfonic acid formalin condensate such as naphthalenesulfonic acid formalin condensate sodium; Alkylsulfosuccinates such as sodium dialkylsulfosuccinate and disodium monoalkylsulfosuccinate; Polyoxyethylene-polyoxypropylene glycol ether sulfate; A sulfonic acid salt or a sulfuric acid ester group and a surfactant having a polymerizable carbon-carbon (unsaturated) double bond in the molecule.

Examples of the nonionic surfactant include polyoxyalkylene alkyl ether compounds such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene tridecyl ether and polyoxyethylene oleyl ether, polyoxyalkylene alkyl ether compounds such as polyoxyethylene octyl Polyoxyalkylene unit-containing ether compounds such as polyoxyalkylene alkylphenyl ether compounds such as phenyl ether and polyoxyethylene nonylphenyl ether, and polyoxyalkylene polycyclic phenyl ether compounds such as polyoxyethylene polycyclic phenyl ether; Polyoxyalkylene alkyl ester compounds such as polyoxyethylene monolaurate, polyoxyethylene monostearate, and polyoxyethylene monooleate; Polyoxyalkylene alkylamine compounds such as polyoxyethylene alkylamine; And sorbitan compounds such as sorbitan monolaurate, sorbitan monostearate, sorbitan trioleate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monooleate, and the like.

Examples of the amphoteric surfactant include lauryl betaine and lauryldimethylamine oxide.

These ion conductive additives may be used singly or in combination of two or more kinds.

The content of the ion conductive additive in the adhesive resin layer 40 is preferably 0.01 parts by mass or more and 10 parts by mass or less, more preferably 0.1 parts by mass or more and 5 parts by mass or less, and most preferably 0.1 parts by mass or less, relative to 100 parts by mass of the ultraviolet- And more preferably not less than 2 parts by mass.

The adhesive resin layer 40 can be formed, for example, by applying a pressure-sensitive adhesive coating liquid on the antistatic layer 30.

As a method of applying the pressure-sensitive adhesive application liquid, conventionally known coating methods such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coating method, a comma coater method, a die coater method, The drying conditions of the applied pressure-sensitive adhesive are not particularly limited, but it is generally preferable to dry the pressure-sensitive adhesive in a temperature range of 80 to 200 캜 for 10 seconds to 10 minutes. More preferably, it is dried at 80 to 170 캜 for 15 seconds to 5 minutes. In order to sufficiently accelerate the crosslinking reaction between the crosslinking agent and the (meth) acrylic adhesive resin, after the drying of the pressure-sensitive adhesive coating liquid is completed, it may be heated at 40 to 80 캜 for about 5 to 300 hours.

In the pressure-sensitive adhesive film 100 according to the present embodiment, the thickness of the pressure-sensitive adhesive resin layer 40 is usually 5 占 퐉 or more and 550 占 퐉 or less, preferably 10 占 퐉 or more and 400 占 퐉 or less, Mu m or less, particularly preferably 50 mu m or more and 250 mu m or less. When the thickness of the adhesive resin layer 40 is within the above range, the adhesive property to the surface of the semiconductor wafer and the handling property are well balanced.

When the adhesive film 100 according to the present embodiment further includes the concave-convex absorbent resin layer 20 described later, the thickness of the adhesive resin layer 40 is preferably 100 占 퐉 or less, more preferably 50 占 퐉 or less More preferably less than 30 占 퐉, further preferably 25 占 퐉 or less, even more preferably less than 20 占 퐉, and particularly preferably 15 占 퐉 or less. Thereby, the distance between the surface of the adhesive resin layer 40 and the antistatic layer 30 can be reduced, and as a result, the antistatic property of the adhesive film 100 can be improved. When the adhesive film 100 according to the present embodiment further includes the concave-convex absorbent resin layer 20 described later, the lower limit value of the thickness of the adhesive resin layer 40 is not particularly limited. However, More preferably at least 0.5 mu m, more preferably at least 1.0 mu m, even more preferably at least 3.0 mu m, and particularly preferably at least 5.0 mu m.

(Antistatic layer)

The adhesive film 100 according to the present embodiment is provided with an antistatic layer 30. As a result, the antistatic property of the adhesive film 100 can be improved while the adhesiveness of the adhesive film 100 is maintained, and the amount of static electricity generated when the adhesive film 100 is peeled from the semiconductor wafer can be suppressed .

It is preferable that the material constituting the antistatic layer 30 includes a conductive polymer in view of reducing the surface resistance value of the antistatic layer 30 and suppressing generation of static electricity accompanying peeling.

Examples of the conductive polymer include a polythiophene conductive polymer, a polypyrrole conductive polymer, a polyaniline conductive polymer, a poly (p-phenylene vinylene) conductive polymer, and a polyquinoxaline conductive polymer.

A polythiophene-based conductive polymer is preferable from the viewpoint of good balance of optical characteristics, appearance, antistatic property, coating property, stability and the like. Examples of the polythiophene conductive polymer include polyethylene dioxythiophene and polythiophene.

These conductive polymers may be used singly or in combination of two or more kinds.

The material for forming the antistatic layer 30 may further include, for example, a dopant, a binder resin, and the like.

The dopant functions as a dopant to more reliably impart (or dope) conductivity to the conductive polymer, and includes, for example, a sulfonic acid-based compound.

Examples of the sulfonic acid compound include p-toluenesulfonic acid, benzenesulfonic acid, ethylbenzenesulfonic acid, octylbenzenesulfonic acid, dodecylbenzenesulfonic acid, mesitylenesulfonic acid, m-xylenesulfonic acid, polystyrenesulfonic acid and polyvinylsulfonic acid. From the viewpoint of improving the solubility and water dispersibility of the conductive polymer, polystyrene sulfonic acid and polyvinyl sulfonic acid are preferable.

The sulfonic acid compound may be used singly or in combination of two or more kinds.

By adding such a dopant, the conductive polymer and the sulfonic acid-based compound partially react to form a sulfonic acid salt, and the antistatic function of the antistatic layer 30 is further improved by the action of the sulfonic acid salt.

The mixing ratio of the dopant is, for example, 100 to 300 parts by mass with respect to 100 parts by mass of the conductive polymer.

As a combination of the conductive polymer and the dopant, a combination of polyethylene dioxythiophene (PEDOT) and polystyrenesulfonic acid (PSS) is preferable because it is more excellent in antistatic property.

The material constituting the antistatic layer 30 may further include a binder resin from the viewpoint of improving film formability and adhesion.

Examples of the binder resin include polyurethane resins, polyester resins, (meth) acrylic resins, polyether resins, cellulose resins, polyvinyl alcohol resins, epoxy resins, polyvinyl pyrrolidone, polystyrene resins, Polyethylene glycol, pentaerythritol, and the like.

The binder resins may be used alone or in combination of two or more. The content of the binder resin is, for example, 10 to 500 parts by mass based on 100 parts by mass of the conductive polymer.

The thickness of the antistatic layer 30 is preferably from 0.01 to 10 mu m, more preferably from 0.01 to 5 mu m, and further preferably from 0.01 to 1 mu m, from the viewpoint of antistatic performance.

(Concave-convex absorbent resin layer)

2, it is preferable that the adhesive film 100 according to the present embodiment further includes a concavo-convex absorbent resin layer 20 between the base layer 10 and the antistatic layer 30. [

This makes it possible to make the thickness of the adhesive resin layer 40 thinner while gradually increasing the concavo-convex absorptivity of the adhesive film 100, thereby reducing the distance between the surface of the adhesive resin layer 40 and the antistatic layer 30 As a result, the antistatic property of the adhesive film 100 can be improved.

The density of the concavo-convex absorbent resin layer 20 is preferably 800 to 990 kg / m 3, more preferably 830 to 980 kg / m 3, and even more preferably 850 to 970 kg / m 3 from the viewpoint of balance between mechanical strength and uneven follow- .

The resin constituting the unevenness absorbent resin layer 20 is not particularly limited as long as it exhibits irregularly absorbing properties, and for example, a thermoplastic resin can be used.

More specifically, it is possible to use an olefin resin, an ethylene / polar monomer copolymer, an ABS resin, a vinyl chloride resin, a vinylidene chloride resin, a (meth) acrylic resin, a polyamide resin, a fluorine resin, a polycarbonate resin, Resins and the like.

Among these, at least one kind selected from an olefin resin and an ethylene / polar monomer copolymer is preferable.

Examples of the olefin resin include ethylene /? - olefin copolymers including linear low density polyethylene (LLDPE), low density polyethylene, high density polyethylene, polypropylene, ethylene and? -Olefins of 3 to 12 carbon atoms, Propylene /? - olefin copolymer containing an? -Olefin of 1 to 12 carbon atoms, an ethylene / cyclic olefin copolymer, an ethylene /? - olefin / cyclic olefin copolymer and the like.

Examples of the ethylene / polar monomer copolymer include ethylene / (meth) acrylate copolymers such as ethylene / (meth) acrylate copolymer, ethylene / (meth) acrylate copolymer, ethylene Unsaturated carboxylic acid ester copolymer; Ethylene / vinyl ester copolymers such as ethylene / vinyl acetate copolymer, ethylene / propionate vinyl copolymer, ethylene / butyric acid vinyl copolymer and ethylene / stearic acid vinyl copolymer.

The resin constituting the unevenness absorbent resin layer 20 may be used alone, or two or more resins may be blended.

Examples of the? -Olefin having 3 to 12 carbon atoms in the ethylene /? - olefin copolymer include propylene, 1-butene, 1-pentene, 3-methyl-1-butene, 1-pentene, 3-methyl-1-pentene, 1-heptene, 1-octene, 1-decene and 1-dodecene. Preferred are propylene and 1-butene.

Of these, low density polyethylene, polyethylene terephthalate, polyethylene terephthalate, polyethylene terephthalate, Polypropylene; Ethylene /? - olefin copolymers such as ethylene / propylene copolymer, ethylene / 1-butene copolymer, ternary copolymer of ethylene / propylene and? -Olefin having 4 to 12 carbon atoms; A ternary copolymer of propylene, 1-butene, and an -olefin having 5 to 12 carbon atoms; Ethylene-vinyl acetate copolymer, and the like, and it is more preferable to use at least one selected from an ethylene-propylene copolymer and an ethylene-vinyl acetate copolymer.

The thickness of the concavo-convex absorbent resin layer 20 is not particularly limited as long as it can fill the unevenness of the concave-convex forming surface of the semiconductor wafer. For example, the thickness is preferably 10 탆 or more and 500 탆 or less, More preferably 30 μm or more and 300 μm or less, and particularly preferably 50 μm or more and 250 μm or less.

In the adhesive film 100 according to the present embodiment, an adhesive layer (not shown) may be provided between each layer. According to this adhesive layer, the adhesiveness between the respective layers can be improved.

Further, the adhesive film 100 according to the present embodiment may be further laminated with a release film.

Next, an example of a manufacturing method of the pressure-sensitive adhesive film for semiconductor wafer processing 100 according to the present embodiment will be described.

First, the concave-convex absorbent resin layer 20 is extruded on one side of the substrate layer 10 and formed by the lamination method. Next, an antistatic layer 30 is formed by applying a predetermined conductive material onto a release film prepared separately and dried, and the antistatic layer 30 is laminated on the concave-convex absorbent resin layer 20. [ Subsequently, a tacky coating liquid is applied on the antistatic layer 30 and dried to form the tacky resin layer 40, and the tacky film 100 is obtained.

The base layer 10 and the concavoconvex absorbent resin layer 20 may be formed by coextrusion molding or may be formed by laminating (laminating) the film base substrate layer 10 and the concave-convex absorbent resin layer 20 on the film do.

Next, an example of a back grinding method (also referred to as back grinding) of a semiconductor wafer using the adhesive film 100 for semiconductor wafer processing according to the present embodiment will be described. The back grinding method of the semiconductor wafer according to the present embodiment is characterized in that the back side grinding of the semiconductor wafer is used as the back grinding tape of the semiconductor wafer processing adhesive film 100 according to the present embodiment.

The release film is peeled from the adhesive resin layer 40 of the adhesive film 100 to expose the surface of the adhesive resin layer 40 and the circuit forming surface of the semiconductor wafer is exposed on the adhesive resin layer 40 I affix it. Subsequently, the semiconductor wafer is fixed to the chuck table of the grinder through the base layer 10 of the adhesive film 100, and the back surface (non-circuit forming surface) of the semiconductor wafer is ground. After grinding is completed, the adhesive film 100 is peeled off. After the grinding of the back surface of the semiconductor wafer is completed, a chemical etching process may be carried out before peeling off the adhesive film 100. After peeling off the adhesive film 100 as required, the surface of the semiconductor wafer is subjected to treatment such as washing with water and plasma cleaning.

In such a back-grinding operation, the semiconductor wafer is usually ground to about 100 to 600 mu m in thickness, depending on the type of the semiconductor chip or the like, as compared with the thickness before grinding, which is usually 500 to 1000 mu m. If necessary, it may be cut to a thickness smaller than 100 탆. The thickness of the semiconductor wafer before grinding is appropriately determined according to the diameter, kind, etc. of the semiconductor wafer, and the thickness of the wafer after grinding is appropriately determined according to the size of the obtained chip, the type of circuit, and the like.

The operation of attaching the semiconductor wafer to the adhesive film 100 may be performed by a person's hand, but is generally performed by an apparatus called an automatic adhesive machine provided with a roll-like adhesive film.

As the back-side grinding method, a known grinding method such as a through-feed method or an in-feed method is employed. Each grinding is performed while cooling the water by sprinkling the water on the semiconductor wafer and the grinding stone. After the back side grinding, the chemical etching is performed as necessary. The chemical etching is performed in a state in which the adhesive film 100 is attached to an etching solution selected from the group consisting of an acidic aqueous solution consisting of a single or a mixture of hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc. or an aqueous alkaline solution such as an aqueous potassium hydroxide solution or an aqueous sodium hydroxide solution Or by dipping a semiconductor wafer. The etching is carried out for the purpose of removing deformation on the back surface of the semiconductor wafer, further thinning of the wafer, removal of the oxide film, etc., and pretreatment for forming the electrode on the back surface. The etching solution is appropriately selected according to the above purpose.

After the back side grinding and the chemical etching, the adhesive film 100 is peeled from the surface of the semiconductor wafer. This series of operations may be performed by human hands, but is generally performed by an apparatus called an automatic peeler.

The surface of the semiconductor wafer after peeling off the adhesive film 100 is cleaned if necessary. Examples of the cleaning method include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the case of wet cleaning, ultrasonic cleaning may be used in combination. These cleaning methods are appropriately selected depending on the contamination situation of the semiconductor wafer surface.

Although the embodiments of the present invention have been described above, they are examples of the present invention, and various configurations other than those described above may be employed.

Example

Hereinafter, the present invention will be described in detail with reference to examples and comparative examples, but the present invention is not limited thereto.

Details of the materials used for the production of the adhesive film are as follows.

<Base layer>

A polyethylene terephthalate film (thickness 50 탆)

&Lt; Resin for forming concave and convex absorbent resin layer &

Irregularly water absorbent resin 1: Ethylene-vinyl acetate copolymer (density: 960 kg / m 3, "EVAPLEX EV150" manufactured by Mitsui DuPont Polychemical Co., Ltd.)

&Lt; Antistatic Layer Forming Material >

Antistatic Layer Formation Material 1: Conductive material (trade name: Denatron P-504CT, manufactured by Nagase ChemteX Corporation) containing polyethylene dioxythiophene / polystyrenesulfonic acid (PEDOT / PSS)

<Ionic Conductivity Additive>

Ionic Conductivity Additive 1: Tetradecyldimethylbenzylammonium chloride (Nichia-like agent, trade name: Nissan Cation M ₂ -100)

<Photo initiator>

Photoinitiator 1: benzyl dimethyl ketal (trade name: Irgacure 651, manufactured by BASF)

&Lt; Coating liquid 1 for adhesive resin layer >

77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate and 0.5 part by mass of benzoyl peroxide as a polymerization initiator were mixed. This was added dropwise to a nitrogen replacement flask containing 20 parts by mass of toluene and 80 parts by mass of ethyl acetate with stirring at 85 ° C over 5 hours, and the mixture was reacted for further 5 hours. After the completion of the reaction, the solution was cooled, and 10 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, product name: CALENS MOI) and 0.02 parts by mass of dibutyltin dilaurate And the mixture was reacted at 85 캜 for 12 hours while blowing air to obtain a solution of a pressure-sensitive adhesive polymer 1 into which a polymerizable carbon-carbon double bond was introduced.

To 100 parts by mass of the copolymer (solid content), 7 parts by mass of benzyldimethyl ketal (Irgacure 651, manufactured by BASF Corporation) as a photoinitiator and 18 parts by mass of an isocyanate-based crosslinking agent (trade name: (Trade name: Aronix M (trade name) manufactured by Dow Corning Toray Co., Ltd.) as a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in one molecule, -400), and 0.5 parts by mass of ion conductive additive 1: tetradecyldimethylbenzylammonium chloride (manufactured by Nissan Chemical Co., Ltd., Nissan Cation M ₂ -100) were added to obtain a coating liquid 1 for a pressure-sensitive adhesive resin layer.

&Lt; Coating liquid 2 for adhesive resin layer >

A coating liquid 2 for a pressure-sensitive adhesive resin layer was obtained in the same manner as the coating liquid 1 for a pressure-sensitive adhesive resin layer except that the ionic conductivity additive 1 was not added.

<Coating Solution 3 for Adhesive Resin Layer>

48 parts by mass of ethyl acrylate, 27 parts by mass of 2-ethylhexyl acrylate, 20 parts by mass of methyl acrylate, 5 parts by mass of glycidyl methacrylate and 0.5 parts by mass of benzoyl peroxide as a polymerization initiator were mixed. This was added dropwise to a nitrogen-containing flask containing 65 parts by mass of toluene and 50 parts by mass of ethyl acetate with stirring at 80 DEG C over 5 hours, followed by further stirring for 5 hours. After completion of the reaction, the solution was cooled, and 25 parts by mass of xylene, 2.5 parts by mass of acrylic acid and 1 part by mass of ion conductive additive, and 0.5 part by mass of tetradecyldimethylbenzylammonium chloride were added thereto and reacted at 85 DEG C for 32 hours while blowing air thereinto To obtain a solution of a pressure-sensitive adhesive polymer 3 into which a polymerizable carbon-carbon double bond was introduced.

To 100 parts by mass of the copolymer (solid content), 7 parts by mass of benzyldimethyl ketal (Irgacure 651, manufactured by BASF Corporation) as a photoinitiator and 18 parts by mass of an isocyanate-based crosslinking agent (trade name: (Trade name: Aronix M (trade name) manufactured by Dow Corning Toray Co., Ltd.) as a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in one molecule, -400) was added to obtain a coating liquid 3 for a pressure-sensitive adhesive resin layer.

[Example 1]

On the polyethylene terephthalate film serving as the base layer, the concavo-convex water absorbent resin 1 to be the concave-convex absorbent resin layer was extruded to a thickness of 195 mu m and laminated to obtain a laminated film of two layers.

Subsequently, an antistatic film was formed by applying an antistatic layer-forming material 1 on a separately prepared release film and drying it, and this antistatic film was laminated on the concavoconvex absorbent resin layer to form an antistatic layer having a thickness of 0.1 占 퐉.

Subsequently, the coating liquid 1 for a pressure-sensitive adhesive resin layer was coated on the antistatic layer of the obtained laminated film and dried to form a 40 mu m thick adhesive resin layer to obtain a pressure-sensitive adhesive film.

The obtained pressure sensitive adhesive film was evaluated in the following manner. The obtained results are shown in Table 1.

[Examples 2 and 3, Comparative Examples 1 to 4]

A pressure-sensitive adhesive film was produced in the same manner as in Example 1 except that the antistatic layer was formed, the thickness of the pressure-sensitive adhesive resin layer, the kind of the coating liquid for the pressure-sensitive adhesive resin layer, and the like were changed as shown in Table 1.

The obtained pressure-sensitive adhesive films were evaluated in the following manner. The obtained results are shown in Table 1, respectively.

<Evaluation>

(1) Measurement of saturation voltage

The adhesive resin layer in the adhesive film was irradiated with an ultraviolet ray at an irradiation intensity of 100 mW / cm 2 at an irradiation dose of 1080 mJ / cm 2 using a high-pressure mercury lamp (UVX-02528S1AJA02 manufactured by Usuio Denki Co., Ltd.) Lt; / RTI &gt; Subsequently, a voltage of 10 kV was applied to the surface of the adhesive resin layer under the conditions of an applied voltage of 10 kV, a distance of 20 mm between the sample and the electrode, and 25 ° C and 50% RH using a static Hornstrom meter H-0110-S4 manufactured by Shishido Semiconductor Co., is subjected to 30 seconds, it was calculated for the saturation voltage (V ₁₎ and the half-life of saturated electrification voltage V ₁ of the surface of the adhesive resin layer can be in accordance with JIS L1094, respectively.

The saturation voltage vs. saturation voltage vs. saturation voltage of the surface of the adhesive resin layer was measured in the same procedure as the measurement of the saturation voltage (V ₁ ), except that the ultraviolet dose was changed to 200 to 540 mJ / cm 2 .

(2) Measurement of the tack force

The adhesive resin layer of the pressure-sensitive adhesive film was laminated to a polyimide film (product name: Capton 200H, manufactured by DuPont-Dupont Co.) under the environment of 25 ° C, and ultraviolet rays having a main wavelength of 365 nm were irradiated from the base layer side of the pressure- And irradiated with ultraviolet light of 1080 mJ / cm 2 at 100 mW / cm 2 to cure the adhesive resin layer. Then, the polyimide film was peeled off from the adhesive film, and a probe having a diameter of 5 mm and a pressure-sensitive adhesive resin layer (thickness: 0.5 mm) were peeled off using a probe tack tester ("TESTING MACHINES Inc., Model 80-02-01" The surface of the adhesive resin layer was brought into contact with the surface of the adhesive resin layer at a speed of 10 mm / sec, contacted with a contact load of 0.98 N / cm 2 for 10 seconds, and then peeled from the surface of the adhesive resin layer in the vertical direction at a rate of 10 mm / Tactile force was measured.

The tack force on the surface of the pressure-sensitive adhesive resin layer was measured in the same procedure as that for the measurement of the tack force, except that the amount of ultraviolet light was changed to 200 to 540 mJ / cm 2.

(3) Evaluation of antistatic property

The antistatic property of the adhesive film was evaluated according to the following criteria.

A: Saturation voltage V ₁ of 1.0 kV or less

○: Saturation voltage V ₁ exceeding 1.0 kV and not more than 2.0 kV

X: Saturation voltage V ₁ exceeding 2.0 kV

(4) Evaluation of Adhesion to Semiconductor Wafer Surface

Adhesion to the surface of the semiconductor wafer was evaluated according to the following criteria.

?: The tack force of the adhesive resin layer not irradiated with ultraviolet rays (i.e., the ultraviolet ray amount of 0 mJ / cm 2) was 10 N / cm 2 or more

X: The tack force of the adhesive resin layer not irradiated with ultraviolet rays was less than 10 N / cm 2

(5) Evaluation of stain resistance on the surface of a semiconductor wafer

The stain resistance of the semiconductor wafer surface was evaluated according to the following criteria.

?: The tack force of the adhesive resin layer photocured by irradiation with ultraviolet light of 1080 mJ / cm 2 was 0.1 N / cm 2 or less

占: The tack force of the adhesive resin layer photocured by irradiation with an ultraviolet ray of 1080 mJ / cm 2 exceeded 0.1 N / cm 2

(6) Evaluation of irregularity absorbability

Good: The bump electrode was not broken when the semiconductor wafer having the bump electrode was attached to the bump electrode formation surface, and the adhesion to the semiconductor wafer was good

X: The bump electrode was broken or the adhesion with the semiconductor wafer was poor when the semiconductor wafer having the bump electrode was attached to the bump electrode formation surface

A bump-equipped semiconductor wafer on which bumps having a bump height of 80 mu m, a bump pitch of 300 mu m, and a bump diameter of 150 mu m were arranged was used for the evaluation of the concavity and convexity absorptivity. The adhesive laminate was adhered by a roll laminator (product name: DR3000II, manufactured by Nitto Seimitsu Co., Ltd.) At a roll speed of 2 mm / sec, a roll pressure of 0.4 MPa, and a table temperature of 80 캜, and the concavo-convex absorptivity after the application was evaluated using an optical microscope.

The pressure-sensitive adhesive films of Examples 1 to 3, in which the substrate layer, the antistatic layer, and the adhesive resin layer were provided in this order and the adhesive resin layer included the ion conductive additive, had a balance of adhesion to the surface of the semiconductor wafer and stain resistance And excellent antistatic property. That is, according to the adhesive film 100 for semiconductor wafer processing according to the present embodiment, the antistatic property after ultraviolet curing is excellent, the amount of the static electricity generated when the semiconductor wafer is peeled off can be suppressed, Can be stably obtained.

On the other hand, the pressure-sensitive adhesive films of Comparative Examples 1 to 3, in which the pressure-sensitive adhesive resin layer does not contain an ion conductive additive, and the pressure-sensitive adhesive films of Comparative Examples 3 and 4,

This application claims priority based on Japanese Patent Application No. 2016-130822, filed on June 30, 2016, the entire disclosure of which is incorporated herein by reference.

Claims (10)

An adhesive film used for protecting a surface of a semiconductor wafer or fixing a semiconductor wafer,
A base layer, an antistatic layer, and a tacky resin layer in this order,
Wherein the adhesive resin layer comprises an ion conductive additive. The pressure-sensitive adhesive film for semiconductor wafer processing according to claim 1, wherein the pressure-sensitive adhesive resin layer comprises an ultraviolet-curable pressure-sensitive adhesive resin. The pressure-sensitive adhesive film for semiconductor wafer processing according to claim 2, wherein the content of the ion conductive additive in the pressure-sensitive adhesive resin layer is 0.01 parts by mass or more and 10 parts by mass or less based on 100 parts by mass of the ultraviolet-curable pressure-sensitive adhesive resin. The ionically conductive composition according to any one of claims 1 to 3, wherein the ion conductive additive is at least one selected from cationic surfactants, anionic surfactants, nonionic surfactants, amphoteric surfactants and ionic liquids By weight based on the total weight of the composition. The adhesive film for semiconductor wafer processing according to any one of claims 1 to 4, wherein the thickness of the adhesive resin layer is 5 占 퐉 or more and 550 占 퐉 or less. The adhesive film for semiconductor wafer processing according to any one of claims 1 to 5, which is a back grind tape. The adhesive film for semiconductor wafer processing according to any one of claims 1 to 6, wherein the antistatic layer comprises a conductive polymer. The adhesive film for semiconductor wafer processing according to any one of claims 1 to 7, further comprising a concavo-convex absorbent resin layer between the base layer and the antistatic layer. 9. The pressure-sensitive adhesive film for semiconductor wafer processing according to any one of claims 1 to 8, wherein the saturation voltage V ₁ of the surface of the pressure-sensitive adhesive resin layer after ultraviolet curing is 1.0 kV or less,
(Way)
The viscous resin layer was irradiated with ultraviolet rays at a wavelength of 365 nm at an irradiation intensity of 100 mW / cm 2 using a high-pressure mercury lamp under an environment of 25 캜 to cure the adhesive resin layer at an ultraviolet dose of 1080 mJ / cm 2. Subsequently, the voltage was applied to the surface of the adhesive resin layer for 30 seconds under the conditions of an applied voltage of 10 kV and a distance of 20 mm between the sample and the electrode at 25 DEG C and 50% RH. Then, the saturated band on the surface of the adhesive resin layer And calculates the voltage V ₁ . 10. The pressure-sensitive adhesive film for semiconductor wafer processing according to any one of claims 1 to 9, wherein the surface tension of the pressure-sensitive adhesive resin layer after ultraviolet curing measured by the following method is 0.1 N / cm 2 or less.
(Way)
The adhesive resin layer of the pressure-sensitive adhesive film was laminated on the polyimide film, and ultraviolet rays having a wavelength of 365 nm were irradiated from the base layer side of the pressure-sensitive adhesive film to the polyimide film using a high-pressure mercury lamp under an environment of 25 캜, at an irradiation intensity of 100 mW / / Cm &lt; 2 &gt; to cure the adhesive resin layer. Then, the polyimide film was peeled off from the adhesive film, and a probe having a diameter of 5 mm and a surface of the adhesive resin layer were brought into contact with each other at a speed of 10 mm / sec using a probe tack tester as a measuring device. And then the probe is peeled from the surface of the adhesive resin layer in the vertical direction at a speed of 10 mm / sec. The tack force of the surface of the adhesive resin layer is measured.

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