KR20180136863A - Apparatus for drying substrate, manufacturing equipment of semiconductor device, substrate drying method using the same - Google Patents

Abstract

According to the present invention, disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate drying apparatus, a semiconductor device manufacturing facility, and a substrate drying method using the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method, and more particularly, to a substrate drying apparatus, a semiconductor device manufacturing facility, and a substrate drying method.

A semiconductor device is manufactured through various processes including a photolithography process for forming a circuit pattern on a substrate such as a silicon wafer. During this process, various foreign substances such as particles, organic contaminants and metal impurities are generated . These foreign substances cause defects on the substrate, and therefore, they act as a factor directly affecting the yield of semiconductor devices. Therefore, in the semiconductor manufacturing process, a cleaning process for removing such foreign substances is essentially involved.

Generally, in the conventional cleaning process, the substrate is washed with pure water (DI-water: deionized water) and dried using isopropyl alcohol (IPA). However, in such a drying process, when the circuit pattern of the semiconductor device is minute, the drying efficiency is low and the pattern collapse frequently occurs in which the circuit pattern is damaged during the drying process. Therefore, Inappropriate.

Therefore, in recent years, researches on a technique of drying a substrate using a supercritical fluid, which can overcome such disadvantages, have been actively conducted.

A problem to be solved by the present invention is to provide a substrate drying apparatus which provides a substrate drying apparatus capable of shortening a drying time.

In addition, the problem of the present invention is to provide a substrate drying apparatus capable of reducing particle generation.

The present invention discloses a substrate drying apparatus. The apparatus includes a chamber for drying the substrate to a first temperature; A first storage for storing a first supercritical fluid having a second temperature lower than the first temperature; A second storage for storing a second supercritical fluid having a third temperature higher than the first temperature; And a supply connected between the first and second reservoirs and the chamber, for supplying the first supercritical fluid and the second supercritical fluid into the chamber.

According to an aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device, comprising: a substrate polishing apparatus for polishing a substrate; A substrate cleaning apparatus for cleaning the substrate; And a substrate drying apparatus for drying the substrate. Here, the substrate drying apparatus may include: a chamber for drying the substrate to a first temperature; A first storage for storing a first supercritical fluid having a second temperature lower than the first temperature; A second storage for storing a second supercritical fluid having a third temperature higher than the first temperature; And a supply connected between the first and second reservoirs and the chamber, for supplying the first supercritical fluid and the second supercritical fluid into the chamber.

A method for drying a substrate according to an exemplary embodiment of the present invention includes: heating a substrate in a chamber to a first temperature; Providing a first supercritical fluid on the substrate having a second temperature below the first temperature; And providing a second supercritical fluid having a third temperature above the first temperature on the substrate.

A substrate drying apparatus in accordance with embodiments of the present invention is configured to supply a first supercritical fluid of a second temperature lower than a first temperature of the process chamber into the process chamber to shorten the drying time of the substrate, A second supercritical temperature of a third temperature higher than the critical point of the critical fluid may be supplied to the chamber to reduce particle generation.

1 is a configuration diagram showing a substrate drying apparatus according to an embodiment of the present invention.
2 is a graph showing pressure and temperature changes in the process chamber of FIG.
Figs. 3 and 4 are exemplary configuration diagrams illustrating the process chamber of Fig.
5 is an exemplary configuration diagram illustrating the supercritical fluid storage of FIG.
6 to 8 are block diagrams showing a substrate processing apparatus according to embodiments of the present invention.
Fig. 9 is an exemplary configuration diagram specifically showing the heating apparatuses of Figs. 6 to 8. Fig.
10A to 10C are perspective views showing the heat exchange member of FIG.
Fig. 11 is an exemplary perspective view specifically showing the heating apparatuses of Figs. 6 to 8. Fig.
12 and 13 are cross-sectional views corresponding to the heating apparatus of Fig.
14 is a configuration diagram showing a manufacturing apparatus for a semiconductor device including a substrate processing apparatus according to embodiments of the present invention.
15 is a cross-sectional view of the substrate cleaning apparatus of Fig.
16 is a flowchart showing a method for drying a substrate according to an embodiment of the present invention.

Fig. 1 shows an example of a substrate drying apparatus 1 according to the concept of the present invention.

Referring to Fig. 1, the substrate drying apparatus 1 may be a supercritical drying apparatus. According to one example, the substrate drying apparatus 1 can dry the cleaning solution on the substrate (S in FIG. 3) using a supercritical fluid. In this specification, a supercritical fluid may mean a supercritical process fluid. Here, the supercritical state means a state in which the material reaches a critical state in which the critical temperature and the critical pressure are exceeded, and the liquid and the gas can not be distinguished from each other. In a supercritical state, a material has a molecular density close to a liquid, but a viscosity is close to a gas. Such supercritical materials are highly advantageous for chemical reactions because of their high diffusivity, permeability, and solubility. In addition, since the supercritical material has a very low surface tension, it does not apply an interfacial tension to the microstructure, so that the drying efficiency during the drying process of the semiconductor device is excellent and it is possible to avoid watermarking and / have.

According to one embodiment, the substrate drying apparatus 1 may include a process chamber 100, a supercritical fluid supply unit 200, and a source fluid supply unit 300.

The process chamber 100 may perform a drying process of the substrate S using a supercritical fluid. That is, the process chamber 100 provides an interior space in which the drying process is performed, and may have sufficient strength and airtightness to maintain the supercritical state of the supercritical fluid. For example, the process chamber 100 may be a high pressure chamber. The supercritical process performed in process chamber 100 may include various unit processes for fabricating semiconductor devices. For example, the etching process may include an etching process using a supercritical fluid as an etchant, a cleaning process cleaning the etched substrate with a supercritical fluid, or a drying process to dry the cleaned substrate. Accordingly, the supercritical fluid supplied to the process chamber 100 can be provided in various types according to a supercritical process. Hereinafter, the supercritical process will be described as a drying process. The process chamber 100 may be heated to a temperature higher than normal temperature. When the substrate is cleaned with isopropylene alcohol (IPA), the process chamber 100 can be heated to a temperature lower than the vaporization point (ex 82.5 ° C) of the isopropylene alcohol. For example, the process chamber 100 may heat the substrate to a first temperature (T 1) of about 40 ° C to 80 ° C. The first pressure (not shown) in the process chamber 100 may vary.

For example, when a substrate S having a fine pattern structure having a high aspect ratio with an aspect ratio of 10 to 50 and a cleaning process using an organic chemical solution is loaded into the process chamber 100, a drying process using a supercritical fluid By performing this process in the process chamber 100, it is possible to efficiently remove the cleaning liquid while preventing damage to the pattern structure having a high aspect ratio. The drying process can process the substrate without damage to the high aspect ratio pattern by using solvent substitution with a supercritical fluid containing an additive such as a surfactant.

Supercritical fluids are liquids at temperatures and pressures above the critical point and have gas-like diffusivity, viscosity and surface tension and are liquid-like solubility. Thus, impurities can be easily removed from the high aspect ratio pattern by solvent substitution in the supercritical state. For example, the organic chemical liquid may be ethyl glycol, 1-propanol, tetrahydraulic franc, 4-hydroxy, 4-methyl, 2- butanol, pentanol, 1-butanol, 2-butanol, methanol, ethanol, n-propyl alcohol, dimethylether, . The process fluid for removing the organic chemical liquid in the supercritical state includes carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4) (C2H3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), acetone (C3H8O), or combinations thereof. Hereinafter, supercritical fluid of carbon dioxide (CO2), which is mainly used for drying the substrate, will be described, but the components and kinds of the supercritical fluid are not limited thereto.

The supercritical fluid supply unit 200 may convert the source fluid supplied from the source fluid supply unit 300 into supercritical fluid and supply it to the process chamber 100. For example, supercritical fluid supply unit 200 may include supercritical fluid reservoirs 210 for converting and storing source fluids into supercritical fluid, and supercritical fluid reservoirs 210 for storing supercritical fluid reservoirs 210, And a supercritical fluid supply unit 230 for supplying supercritical fluid. Here, the source fluid may refer to a process fluid in a gaseous or liquid state. The source fluid supplied to the supercritical fluid reservoir 210 may be converted to a supercritical fluid by being pressurized and heated above a critical point. The converted supercritical fluid may be supplied to the process chamber 100 from the supercritical fluid storage 210 via the supercritical fluid supply line 220.

According to the concept of the present invention, supercritical fluid storage 210 may be provided in a plurality of. The plurality of supercritical fluid reservoirs 210 are connected in parallel with each other and can store supercritical fluids of different process conditions, respectively. For example, supercritical fluids stored in each of the plurality of supercritical fluid reservoirs 210 may have different temperatures and different pressures. As another example, the supercritical fluids stored in each of the plurality of supercritical fluid reservoirs 210 may have different temperatures, and the pressures may be equal to each other. In the above examples, the supercritical fluids may be the same kind of process fluids, but the embodiments of the present invention are not limited thereto.

According to one embodiment, the plurality of supercritical fluid reservoirs 210 includes a first reservoir 211 storing a first supercritical fluid 210_1 of a second temperature T2 and a second pressure P2, The second storage portion 213 storing the second supercritical fluid 210_2 of the third temperature T3 and the third pressure P3 and the third storage portion 213 of the third temperature T4 and the fourth pressure P4, And a third storage unit 215 storing the supercritical fluid 210_3. The second to fourth temperatures T2 to T4 are different from each other, and the second to fourth pressures P2 to P4 may be the same or different from each other. The second temperature T2 may be lower than the first temperature T1 and the third temperature T3 may be higher than the first temperature T1 and the fourth temperature T4 may be equal to the first temperature T1 . For example, when the first supercritical fluid 210_1 includes carbon dioxide, the second temperature T2 is between about 30 캜 and about 39 캜 (ex, 31.1 캜), the third temperature T4 is between about 100 캜 And the fourth temperature (T4) may be about 40 [deg.] C to 80 [deg.] C. Even if a separate heating device is provided in the supercritical fluid supply part 230, due to the high flow velocity of the first to third supercritical fluids 210_1, 210_2 and 210_3 flowing in the supercritical fluid supply line 220, The heat transfer rate from the heating device to the first to third supercritical fluids 210_1, 210_2 and 210_3 may be limited. The embodiments of the present invention are not limited thereto. On the other hand, the second to fourth pressures P2 to P4 may be 80 to 300 bar, and they may be the same or different from each other. Although the number of the supercritical fluid reservoirs 210 is three in this embodiment, the number of the supercritical fluid reservoirs 210 is not limited thereto. The plurality of supercritical fluid reservoirs 210 may be two or more than four. The specific configuration of the supercritical fluid storage unit 210 will be described later.

The supercritical fluid supply 230 may provide a first supercritical fluid 210_1, a second supercritical fluid 210_2 and a third supercritical fluid 210_3 in the process chamber 100. According to one example, the supercritical fluid supply 230 may include a supercritical fluid supply line 220, forward control valves 234, rear control valves 238, and filters 239 .

The supercritical fluid supply line 220 includes front supply lines 222 connected to the plurality of supercritical fluid reservoirs 210, a connection line 224 connected in common with the front supply lines 222, And back supply lines 226 branched from the process chamber 224 and connected to the process chamber 100, respectively. For example, the front supply lines 222 include a first front supply line 222_1 having one end connected to the first storage unit 211, a second front supply line 222_1 having one end connected to the second storage unit 213, Line 222_2, and a third forward supply line 222_3 having one end coupled to the third storage 215. The third forward supply line 222_2 has a first end connected to the third storage 215,

The back feed lines 226 include a first back feed line 226_1 connected to the top of the process chamber 100, a second back feed line 226_2 connected to the bottom of the process chamber 100, And a third back feed line 226_3 connected to the sides of the second back feed line 226_3.

The front control valves 234 may include first to third front control valves 232a, 232b, 232c. The first to third front control valves 232a, 232b and 232c may be fastened to the first to third front supply lines 222_1, 222_2 and 222_3, respectively. The first to third front control valves 232a, 232b and 232c can selectively open and close the first to third front supply lines 222_1, 222_2 and 222_3, respectively. The first to third front control valves 232a, 232b and 232c are connected to the first to third supercritical fluids 210_1 to 210_3 flowing through the first to third front supply lines 222_1, 222_2 and 222_3, 210_2, and 210_3, respectively.

 The rear control valves 238 may include first to third rear control valves 2236a, 236b, 236c. The first to third rear control valves 2236a, 236b, 236c may be fastened to the first to third rear supply lines 226_1, 226_2, 226_3, respectively. The first to third rear control valves 236a, 236b, and 236c can selectively open and close the first to third rear supply lines 226_1, 226_2, and 226_3, respectively. The first to third rear control valves 236a, 236b and 236c are connected to the first to third supercritical fluids 210_1 to 210d flowing through the first to third rear supply lines 226_1, 226_2 and 226_3, 210_2, and 210_3, respectively.

The filters 239 may be fastened to the front supply lines 222 or the back supply lines 226. The filters 239 can remove particles of the first through third supercritical fluids 210_1, 210_2, and 210_3. Each of the filters 239 may comprise a metal sintered filter. The filters 239 can remove particles having a size of about 10 n to 100 nm or more. The filters 239 can remove particles in the first through third supercritical fluids 210_1, 210_2, and 210_3. According to one example, the filters 239 may include a first filter 237_1_, a second filter 237_2, and a third filter 237_3. The first filter 237_1_, the second filter 237_2 and the third filter 237_3 may be fastened to the first to third front supply lines 222_1, 222_2 and 222_3, respectively. Alternatively, the first filter 237_1_, the second filter 237_2, and the third filter 237_3 may be fastened to the first to third rear supply lines 226_1, 226_2, and 226_3, respectively.

Since the inner space before the first to third supercritical fluids 210_1, 210_2 and 210_3 is supplied to the process chamber 100 is set to a pressure lower than the supercritical state, 1 to the third supercritical fluids 210_1, 210_2 and 210_3 may be condensed by the thermal expansion to be formed into particles. Such particles may act as a bad source for the substrate in the process chamber 100. Accordingly, in the initial stage in which the first to third supercritical fluids 210_1, 210_2 and 210_3 are supplied, the lower part of the process chamber 100 (that is, the process located below the substrate) through the second rear supply line 226_2 And a pressure gradient between the internal pressure of the process chamber 100 and the supply pressure of the first to third supercritical fluids 210_1, 210_2 and 210_3 is lowered to an allowable range The supercritical fluid is also simultaneously supplied to the first back feed line 226_1 or the third back feed line 226_3 so that the first to third supercritical fluids 210_1, 210_2 and 210_3 of the process chamber 100 The supply time can be shortened.

Alternatively, one or both of the first to third rear supply lines 226_1, 226_2, 226_3 may be omitted. As an example, the third back feed line 226_3 may be omitted. As another example, one of the third backward feed line 226_3 and the first and second backward feed lines 226_1 and 226_2 may be omitted.

The control unit 10 may control the process chamber 100 and the supercritical fluid supply unit 200. The control unit can control opening and closing of the front control valves 232a, 232b and 232c and the rear control valves 2236a, 236b and 236c.

FIG. 2 shows the pressure and temperature variations within the process chamber 100 of FIG.

Referring to FIG. 2, the first through third supercritical fluids 210_1, 210_2 and 210_3 may be sequentially supplied according to the pressure of the process chamber 100. The pressure of the process chamber 100 may have a rising section S212, a saturation section S214 and a falling section 216 depending on the time of the drying process.

For example, supercritical fluid supply unit 200 within the rising section S212 of the process chamber 100 pressure may include a first supercritical fluid 210_1 and a second supercritical fluid 210_2 Can be supplied. The first supercritical fluid 210_1 may be provided in the process chamber 100 at the beginning of the drying process of the substrate S. [ The first supercritical fluid 210_1 may have a density higher than that of the second supercritical fluid 210_2 and the third supercritical fluid 210_3. The first supercritical fluid 210_1 may be filled faster than the second supercritical fluid 210_2 and the third supercritical fluid 210_3 in the subsequent flow. The drying time can be shortened.

When the pressure in the process chamber 100 reaches the critical point 217 of the first supercritical fluid 210_1, the supercritical fluid supply unit 200 supplies the second supercritical fluid 210_2 into the process chamber 100 . The critical point 217 may be defined as a positive pressure at which the first supercritical fluid 210_1 changes from a gas phase to a liquid phase within the process chamber 100. The critical point 217 of the first supercritical fluid 210_1 may be 72 bar.

The second supercritical fluid 210_2 may be supplied before the saturation interval S214 of the process chamber 100 pressure. The pressure of the process chamber 100 in the saturation interval S214 may be about 150 bar. The second supercritical fluid 210_2 may prevent particle formation in the process chamber 100. [ For example, when the first supercritical fluid 210_1 is heated in the process chamber 100, the particles may be generated by the expansion of the first supercritical fluid 210_1. Particle generation in the process chamber 100 can be minimized and / or reduced since the second supercritical fluid 210_2 is provided in the process chamber 100 after the particles have been removed by the second filter 237_2 .

The supercritical fluid supply unit 200 can supply the third supercritical fluid 210_3 into the process chamber 100 when the pressure of the process chamber 100 reaches the saturation interval S214. The third supercritical fluid 210_3 may dissolve and dry the cleaning solution and / or organic solution on the substrate S.

When the pressure of the process chamber 100 reaches the lowering period S216, the supercritical fluid supply unit 200 is operated to discharge the first supercritical fluid 210_1, the second supercritical fluid 210_2, 210_3 can be stopped. The first supercritical fluid 210_1, the second supercritical fluid 210_2 and the third supercritical fluid 210_3 may be evacuated in the process chamber 100.

The first to third supercritical fluids 210_1, 210_2, and 210_3, which are required according to the steps of the semiconductor manufacturing process (e.g., the minimum line width, pattern density, or aspect ratio of the fine pattern formed on the substrate) 210_3) may vary. According to each step, the first to third supercritical fluids 210_1, 210_2 and 210_3 may be optimized to prevent collapse of the fine pattern formed on the substrate or to minimize the generation of particles in the process chamber 100 It may be required to be. The first to third supercritical fluids 210_1, 210_2 and 210_3 stored in the supercritical fluid reservoir 210 are supplied to the supercritical fluid reservoir 210 to satisfy the required characteristics of the first to third supercritical fluids 210_1, 210_2 and 210_3. ) Can be adjusted. Particularly, since the temperatures of the first through third supercritical fluids 210_1, 210_2 and 210_3 flowing into the process chamber 100 closely affect the generation of particles, the first through third supercritical fluids 210_1 , 210_2, and 210_3 need to be finely adjusted.

In the case where the substrate drying apparatus 1 includes one supercritical fluid storage unit 210, the first to third supercritical fluids 210_1, 210_2, 210_3 may not be smoothly generated and supplied. Particularly, since it takes a long time to adjust the temperatures of the first through third supercritical fluids 210_1, 210_2 and 210_3 through heating or cooling, the first through third supercritical fluids 210_1, 210_2, and 210_3 may not be easily provided. However, according to the embodiments of the present invention, since the substrate drying apparatus 1 has a plurality of supercritical fluid reservoirs 210 capable of respectively storing supercritical fluids at preset temperature and pressure conditions, It is possible to easily supply the first to third supercritical fluids 210_1, 210_2 and 210_3 satisfying the supercritical characteristics (for example, the required temperature and / or pressure) to the process chamber 100. As a result, the efficiency of the drying process using the substrate drying apparatus 1 can be improved.

The source fluid supply unit 300 may supply the source fluid to a plurality of supercritical fluid reservoirs 210. For example, the source fluid supply unit 300 may include a source fluid reservoir 310 for storing the source fluid and a source fluid 310 for providing a flow path of the source fluid from the source fluid reservoir 310 to the supercritical fluid reservoirs 210. [ And may include a supply line 320.

The source fluid reservoir 310 may be provided as a storage cylinder or storage tank having an interior space for storing the source fluid. The source fluid may be supplied from the outside to the source fluid reservoir 310. For example, the source fluid reservoir 310 may be supplied with a source fluid through a separate tubing. The source fluid reservoir 310 may store the source fluid in a liquid or gaseous state. In addition, the interior of the source fluid reservoir 310 may be maintained above a certain pressure to increase the amount of source fluid stored in the liquid state, thereby increasing the amount of total source fluid stored therein.

The source fluid supply line 320 includes a main line 322 connected to the source fluid reservoir 310 and source lines 322 branched from the main line 322 and connected to the plurality of supercritical fluid reservoirs 210 324). For example, the source lines 324 include a first source line 324_1 having one end connected to the first storage unit 211, a second source line 324_2 having one end connected to the second storage unit 213, And a third source line 324_3 having one end connected to the third storage unit 215. [ The main valve 322 is provided with the main valve 332 and the first to third source valves 334_1, 334_2 and 334_3 are respectively installed in the first to third source lines 324_1, 324_2 and 324_3 . The main valve 332 can control the opening and closing of the main line 322 and the flow rate of the source fluid flowing through the main line 322. The first through third source valves 334_1 334_2 334_3 open and close the first through third source lines 324_1 324_2 324_3 and the first through third source lines 324_1 324_2 324_3, The flow rate of the flowing source fluid can be adjusted individually.

Pumps 340 may be coupled to source lines 324, respectively. Pumps 340 may pressurize the source fluid flowing through source lines 324 beyond the critical point to supercritical fluid reservoirs 210. That is, the pumps 340 may raise the internal pressure of the supercritical fluid reservoirs 210 above the critical point of the source fluid. If the source fluid is gaseous, a condenser (not shown) may be installed in the main line 322 or in each of the source lines 324. The condenser (not shown) may convert the gaseous source fluid into a liquid phase to increase the flow rate of the source fluid supplied to the supercritical fluid reservoirs 210. Alternatively, a source filter (not shown) may be provided in the main line 322 or in each of the source lines 324. A source filter (not shown) may remove impurities in the source fluid supplied from the source fluid reservoir 310.

A discharge line 242 may be connected to the bottom of the process chamber 100. The first to third supercritical fluids 210_1, 210_2 and 210_3 in the process chamber 100 may be discharged to the outside through the discharge line 242. [ The first to third supercritical fluids 210_1, 210_2 and 210_3 discharged through the discharge line 242 may be discharged into the atmosphere or may be stored in the recovery tank 250. The discharge line 242 may be provided with a discharge valve 244. The discharge valve 244 can regulate the flow rates of the first through third supercritical fluids 210_1, 210_2 and 210_3 flowing through the opening and closing line 242 of the discharge line 242 and the discharge line 242.

FIGS. 3 and 4 are exemplary configuration diagrams illustrating the process chamber 100 of FIG.

Referring first to FIG. 2, the process chamber 100 may include a housing 110, a support member 120, a heating member 130, a supply port 140, and a discharge port 150.

The housing 110 may provide a space in which the drying process is performed. During the performance of the drying process, the interior of the housing 110 may be sealed from the outside. The housing 110 may be provided with a material capable of withstanding a high pressure exceeding a critical pressure.

The support member 120 may be provided inside the housing 110 to support the substrate S. [ According to one embodiment, the support member 120 may be fixed to the lower wall of the housing 110. Alternatively, the support member 120 may be provided in a rotatable structure instead of being fixed, so as to rotate the substrate S placed on the support member 120. However, the embodiments of the present invention are not limited thereto. The shape of the support member 120 for supporting the substrate S may be variously provided.

When the first to third supercritical fluids 210_1, 210_2 and 210_3 are heated to a supercritical state by heating the supercritical fluid to a critical temperature or more, or when the supercritical fluid is liquefied, the heating member 130 heats the interior of the housing 110 . For example, the heating member 130 may heat the substrate S to a first temperature T1 of about 40 [deg.] C to about 80 [deg.] C. The heating member 130 may be embedded in the side wall of the housing 110. For example, the heating member 130 may be provided as a heater that receives power from the outside and generates heat. The position of the heating member 130 is not limited thereto and can be installed at a different position.

The supply port 140 may supply the first through third supercritical fluids 210_1, 210_2, 210_3 into the process chamber 100. The supply port 140 may be formed in the housing 110, and may be provided singularly or plurally. For example, the supply port 140 may include an upper supply port 140_1 formed on the upper wall of the housing 110, a lower supply port 140_2 formed on the lower wall of the housing 110, And a side supply port 140_3 formed therein. The upper, lower, and side supply ports 140_1, 140_2, and 140_3 may be connected to the first, second, and third rear supply lines 226_1, 226_2, and 226_3, respectively. Optionally, one or both of the top, bottom, and side feed ports 140_1, 140_2, 140_3 may be omitted. The process chamber 100 may further include a gas supply port (not shown) provided on the upper wall of the housing 110. A gas supply port (not shown) may be connected to a gas supply line (not shown) to provide an inert gas into the interior of the housing 110. For example, the inert gas may include helium (He), neon (Ne), or argon (Ar), including nitrogen (N2).

 The discharge port 150 may be provided in the lower wall of the housing 110. The discharge port 150 is connected to the discharge line 242 to discharge the first to third supercritical fluids 210_1, 210_2 and 210_3 or the inert gas inside the housing 110 to the outside. For example, in the latter stage of the drying process, the first to third supercritical fluids 210_1, 210_2 and 210_3 are discharged from the process chamber 100 and the inner pressure thereof is lowered below the critical pressure, 210_1, 210_2, and 210_3 may be liquefied. The liquefied supercritical fluid can be discharged to the outside through the discharge port 150 by gravity.

Unlike the above, the support member 120 may be installed on the upper portion of the housing 110. 3, the support member 120 may be provided on the lower surface of the upper wall of the housing 110 and extend vertically downward, and may be provided with a structure in which the support member 120 is bent perpendicularly in the horizontal direction at the lower end thereof. In this case, the process chamber 100 may further include a blocking member 160. The blocking member 160 includes a shielding plate 162 disposed between the lower supply port 140_2 and the support member 120 and support bars 162 installed on the lower wall of the housing 110 to support the shielding plate 162 164). The blocking plate 162 may block the first through third supercritical fluids 210_1, 210_2 and 210_3 supplied through the lower supply port 140_2 from being directly sprayed onto the substrate S. [ The supports 164 may be spaced along the circumference of the blocking plate 162 to provide a flow path for the first through third supercritical fluids 210_1, 210_2, 210_3.

An upper space US and a lower space LS can be defined inside the process chamber 100 by the support member 120 and the blocking member 160. [ The upper and lower spaces US and LS can communicate with each other. The first to third supercritical fluids 210_1, 210_2 and 210_3 may be supplied to the lower space LS of the process chamber 100 through the lower supply port 140_2 at the initial stage of the supply. Thereafter, when the pressure gradient between the internal pressure of the process chamber 100 and the supply pressure of the supercritical fluid becomes sufficiently small, the first to third supercritical fluids 210_1, 210_2 and 210_3 are supplied to the upper supply port 140_1, To the upper space US. In this embodiment, the discharge port 150 may be located under the blocking plate 162. Further, the side supply port 140_3 may be omitted, but the embodiments of the present invention are not limited thereto.

5 is an exemplary configuration diagram illustrating the supercritical fluid storage of FIG.

5, the supercritical fluid reservoir 210 may include a supercritical reservoir 212, a heater 214, and a detection sensor 218.

The supercritical storage tank 212 may provide an internal space in which the process fluid (i.e., the source fluid or the first through third supercritical fluids 210_1, 210_2, 210_3) is stored. The supercritical storage tank 212 may be provided in a shape that is resistant to pressure changes in the internal space. For example, supercritical storage tank 212 may be provided in a cylindrical or spherical shape. The supercritical storage tank 212 may also be made of a stainless steel material capable of withstanding an internal pressure of between 80 and 300 bar at a temperature of 30 to 300 ° C.

The supercritical storage tank 212 may be provided with a first connection port 216a connected to the source line 324 and a second connection port 216b connected to the front supply line 222. [ The first connection port 216a and the second connection port 216b may be provided in the supercritical storage tank 212 considering the flow of the process fluid in the internal space. For example, the first connection port 216a and the second connection port 216b may be connected to each other in the supercritical storage tank 212, respectively. The supercritical storage tank 212 may be elongated in the direction in which the first connection port 216a and the second connection port 216b face each other.

The heater 214 may heat the process fluid supplied to the supercritical storage tank 212. According to one embodiment, the heater 214 may be provided in a form embedded in the supercritical storage tank 212. That is, the heater 214 may be embedded in the wall of the supercritical storage tank 212 or attached to the inner wall of the supercritical storage tank 212. The heater 214 may be attached to the inner wall of the supercritical storage tank 212 (e.g., the bottom) and the first built-in heater 214a embedded in the wall of the supercritical storage tank 212, And may include a second built-in heater 214b that extends. The second built-in heater 214b may be provided in an elongated form along the longitudinal direction of the supercritical storage tank 212. [ Accordingly, the contact area between the second built-in heater 241b and the process fluid can be increased to increase the heat exchange efficiency. However, the embodiments of the present invention are not limited thereto. According to another embodiment, the heater 214 may be provided to attach to the outer wall of the supercritical storage tank 212.

The heater 214 may heat the process fluid (i.e., source fluid) contained in the supercritical storage tank 212 to reach a critical temperature. The source fluid may be expanded in the process of being heated by the heater 214 to increase the pressure. The pump 340 (see FIG. 1) coupled to the source line 324 may raise the pressure in the interior space of the supercritical storage tank 212. The source fluid may not be able to reach the critical pressure in the interior space due to expansion upon heating. Accordingly, the pump 3102 can increase the pressure of the inner space to the critical pressure by raising the pressure of the inner space.

In short, the source fluid can be supplied to the interior of the supercritical storage tank 212 by the source line 324, filled above the critical pressure, and heated by the heater 214 above the critical temperature. Accordingly, first through third supercritical fluids 210_1, 210_2 and 210_3, which are supercritical process fluids, may be stored in the supercritical storage tank 212. [ The temperature and pressure inside the supercritical storage tank 212 can be detected and maintained in the required supercritical state by the detection sensor 218 including the temperature sensor 218a and the pressure sensor 218b.

Optionally, a third connection port 216c may be provided in the supercritical storage tank 212. A vent line 223 may be connected to the third connection port 216c. The vent line 223 can discharge the process fluid in the supercritical storage tank 212. The vent line 223 can be selectively opened and closed. The vent line 223 is also provided with an adjustable degree of opening so that the amount of process fluid exiting through the vent line 223 can be adjusted. For example, the vent line 223 may be provided with a safety valve, and if the internal pressure of the supercritical storage tank 212 exceeds the allowable pressure, the safety valve may be driven to automatically reduce the internal pressure.

FIGS. 6 to 8 are block diagrams showing embodiments of the supercritical fluid supply unit 230 of the supercritical fluid supply unit 200 of FIG.

Referring to FIGS. 6-8, the supercritical fluid supply 230 may include a temperature controller 260. The process chamber 100, the supercritical fluid reservoirs 210, the front control valves 234, the rear control valves 238, the filters 239, the discharge line 242 and the discharge valve 244, 1 < / RTI > A detailed description of the redundant configuration will be omitted for the sake of simplicity.

The temperature regulator 260 may be fastened to the third rear supply lines 226_3. The temperature controller 260 may include first to third temperature controllers 260_1, 260_2 and 260_3. The first to third temperature regulating devices 260_1, 260_2, and 260_3 may be connected to the first to third rear supply lines 226_1, 226_2, and 226_3, respectively. The temperature of the first to third temperature regulators 260_1, 260_2, and 260_3 can be controlled by controlling the temperature of the first to third supercritical fluids 210_1, 210_2, and 210_3. Each of the temperature regulating devices 260 may include a heating device 262 and a cooling device 264. For example, the heating device 262 may be provided as an inline heater or an adsorption column, and the cooling device 264 may be provided as a cooler using cooling water as a coolant. Optionally, in each of the temperature regulating devices 260, one of the heating device 262 and the cooling device 264 may be omitted.

Referring to FIG. 6, the heating device 262 and the cooling device 264 of each of the first to third temperature regulating devices 260_1, 260_2 and 260_3 may be connected to each other in series. For example, the heating device 262 and the cooling device 264 of the first temperature regulating device 260_1 are connected in series to the first back feed line 226_1 and the second back feed line 226_2 is provided with the 2 heating device 262 and the cooling device 264 of the temperature control device 260_2 may be provided in series. Likewise, the third rear supply line 226_3 may be provided with a heating device 262 and a cooling device 264 of the third temperature regulating device 260_3 connected in series. The serially connected heating device 262 and the cooling device 264 may be selectively driven by a control unit (not shown).

The temperature controller 260 can more effectively control the temperatures of the first through third supercritical fluids 210_1, 210_2 and 210_3 supplied to the process chamber 100. Particularly, since the temperature regulating device 260 includes not only the heating device 262 but also the cooling device 264, it is possible to regulate the temperature rise as well as the temperature rise of the first to third supercritical fluids 210_1, 210_2 and 210_3 . As a result, the first to third supercritical fluids 210_1, 210_2 and 210_3 satisfying the required characteristics can be more effectively provided to the process chamber 100. [

According to another embodiment, the heating device 262 and the cooling device 264 of each of the temperature regulating devices 260 may be connected in parallel with each other. Referring to FIG. 7, the supercritical fluid supply line 220 may further include branch lines 228 connected in parallel to the backward supply lines 226, respectively. A heating device 262 is provided at one of the back feed line 226 and the branch line 228 between two points where the back feed line 226 and the branch line 228 are connected, (264) may be provided. Valves (not shown) are also provided in the back feed line 226 and the branch lines 228, respectively, between the two points where the back feed line 226 and the branch line 228 are connected, The third supercritical fluids 210_1, 210_2, and 210_3 may be adjusted to selectively flow into either the back feed line 226 or the branch line 228. [

For example, the first branch line 228_1 is connected in parallel to the first back feed line 226_1, and the heating device 262 and the cooling device 264 of the first temperature regulating device 260_1 are connected in parallel And may be provided respectively to the first back feed line 226_1 and the first branch line 228_1 to be connected. The second branch line 228_2 is connected in parallel to the second rear supply line 226_2 and the heating device 262 and the cooling device 264 of the second temperature regulating device 260_2 are connected in parallel with each other And may be provided to the second rear supply line 226_2 and the second branch line 228_2, respectively. Similarly, the third branch line 228_3 is connected in parallel to the third rear supply line 226_3, and the heating device 262 and the cooling device 264 of the third temperature regulating device 260_3 are connected in parallel to each other May be provided to the third rear supply line 226_3 and the third branch line 228_3, respectively, so as to be connected.

According to another embodiment, as shown in FIG. 8, each of the temperature regulating devices 260 may include a plurality of heating devices 262a and 262b connected in parallel with each other. For example, the first heating device 262a and the second heating device 264a of the first temperature regulating device 260_1 are connected to the first back feed line 226_1 and the first branch line 228_1 so as to be connected to each other in parallel And the second back feed line 226_2 and the second back feed line 226_2 are arranged such that the first heating device 262a and the second heating device 264a of the second temperature regulating device 260_2 are connected in parallel with each other, (228_2), respectively. Similarly, the first heating device 262a and the second heating device 264a of the third temperature regulating device 260_3 are connected to the third back feed line 226_3 and the third branch line 228_3 so as to be connected to each other in parallel Respectively. At this time, the set temperatures of the first heating device 262a and the second heating device 262b may be different from each other.

Fig. 9 is an exemplary configuration diagram specifically showing the heating apparatuses of Figs. 6 to 8. Fig. 10A to 10C are perspective views showing the heat exchange member of FIG.

9, the heating device 262 may be provided as an inline heater. For example, the heating device 262 may include a body 2621, a heating source 2622, and a heat exchange member 2623.

The body 2621 has an inlet 2624 and an outlet 2625 and may be provided in a cylindrical shape to provide a flow path of the first through third supercritical fluids 210_1, 210_2 and 210_3 therein . The body 2621 can be elongated in the direction in which the inlet port 2624 and the outlet port 2625 face each other. A back feed line 226 or a branch line 268 may be connected to each of the inlet port 2624 and the outlet port 2625.

The heating source 2622 can heat the first through third supercritical fluids 210_1, 210_2 and 210_3 flowing in the body 2621. [ For example, the heating source 2622 may be provided to be embedded in the side wall of the body 2621, but is not limited thereto. The heating source 2622 may be provided to be attached to the inner wall of the body 2621. [

The heat exchange member 2623 may be provided in the inner space of the body 2621. The heat exchange member 2623 may be fixed to the inner wall of the body 2621 or may be spaced apart from the inner wall by a predetermined distance. The heat exchange member 2623 may be provided in a shape corresponding to the shape of the inner space of the body 2621. [ For example, the heat exchange member 2623 may be elongated along the longitudinal direction of the body 2621. The heat exchange member 3232 may be provided with a metal having a high thermal conductivity. Further, the heat exchange member 2623 can be provided with a metal having high corrosion resistance to the process fluid in a supercritical state. The contact area between the first to third supercritical fluids 210_1, 210_2 and 210_3 flowing in the body 2621 through the heat exchange member 2623 and the heat source is increased or the contact area between the first The third supercritical fluids 210_1, 210_2 and 210_3 may be flowed in a turbulent flow manner to increase the thermal diffusion coefficient between the heat source and the fluid. As a result, the heat exchange efficiency of the heating device 262 can be increased. Hereinafter, with reference to Figs. 10A to 10C, the shape of the heat exchanging member will be described in detail.

Referring to FIG. 10A, the heat exchange member 2623 may be provided in a cylindrical shape having a plurality of holes 2623h. The holes 2623h provide a path through which the first through third supercritical fluids 210_1, 210_2 and 210_3 flow and improve the fluidity of the first through third supercritical fluids 210_1, 210_2 and 210_3 . Alternatively, holes 2623h may be omitted.

Referring to FIG. 10B, the heat exchange member 2623 may include a first heat exchange member 2623a and a second heat exchange member 2623b. The first heat exchange member 2623a may be provided in a rod shape. For example, the first heat exchange member 2623a may be provided in a cylindrical or prismatic shape. The first heat exchange member 2623a may be fixed to the inner wall of the body 2621. [ The second heat exchange member 2623b may be fixed to the outer surface of the first heat exchange member 2623a. The second heat exchange member 2623b may be provided in a plate shape and may include a plurality of holes 2623c. For example, the second heat exchanging member 2623b may be provided in the form of a plate or polygonal plate. The second heat exchange members 2623b may be provided in a plurality and may be spaced from each other along the longitudinal direction of the first heat exchange member 2623a.

Referring to FIG. 10C, the second heat exchange member 2623d may be provided in a spiral shape on the outer surface of the first heat exchange member 2623a. The first to third supercritical fluids 210_1, 210_2, and 210_3 may flow spirally along the second heat exchange member 2623d. Accordingly, the first to third supercritical fluids 210_1, 210_2 and 210_3 can flow in the body 2621 in the form of turbulent flow.

Fig. 11 is an exemplary perspective view specifically showing the heating apparatuses of Figs. 6 to 8. Fig. 12 and 13 are cross-sectional views corresponding to the heating apparatus of Fig.

11 and 12, the heating device 262 may be provided as an adsorption column. For example, the heating device 262 may include a body 2630, an adsorbent 2632, and a temperature sensor 2640.

The body 2630 may be provided in a cylindrical shape to receive the adsorbent 2632 and to provide a flow path for the first through third supercritical fluids 210_1, 210_2, and 210_3. For example, the body 2630 may have a hollow rectangular parallelepiped shape, but is not limited thereto. An inlet pipe 2634 and an outlet pipe 2636 may be provided at both ends in the longitudinal direction of the body 2630. A back feed line 226 or a branch line 268 can be connected to each of the inlet pipe 2634 and the outlet pipe 2636.

An adsorbent 2632 may be provided inside the body 2630. The adsorbent 2632 may be provided as a material capable of absorbing the impurities contained in the first through third supercritical fluids 210_1, 210_2 and 210_3. For example, the sorbent 2632 may comprise ceramics such as alumino silicate or zeolite. Impurities of the first through third supercritical fluids 210_1, 210_2 and 210_3 introduced into the body 2630 through the inlet pipe 2634 can be absorbed by the adsorbent 2632. [ The first to third supercritical fluids 210_1, 210_2 and 210_3, which flow in the body 2630 due to the heat generated by the adsorption phenomenon, may be heated .

The temperature sensor 2640 can sense the temperatures of the first through third supercritical fluids 210_1, 210_2 and 210_3 flowing in the body 2630. [ The temperature sensor 2640 may be connected to the inlet pipe 2634 and the outlet pipe 2636, but is not limited thereto. In one example, the temperature sensor 2640 may sense the difference between the temperature of the supercritical fluid flowing into the body 2630 and the temperature of the supercritical fluid discharged from the body 2630. Accordingly, it is possible to monitor whether the supercritical fluid meets a required temperature condition and at the same time to monitor the temperature of the adsorbent 2632 using the temperature difference of the first to third supercritical fluids 210_1, 210_2 and 210_3, The replacement cycle can be determined. When the heating device 262 is provided in the form of an adsorption column, the temperature of the supercritical fluid can be controlled and the cleanliness of the first through third supercritical fluids 210_1, 210_2 and 210_3 can be improved.

According to another embodiment, the heating device 262 may further include an additional heating member 2638, as shown in Fig. The additional heating member 2638 may heat the first through third supercritical fluids 210_1, 210_2, 210_3 flowing in the interior of the body 2630. The additional heating member 2638 may be provided as a heater that receives power from the outside and generates heat. For example, the additional heating element 2638 may be provided buried in the side wall of the body 2630, but is not limited thereto. The temperature of the first through third supercritical fluids 210_1, 210_2 and 210_3 can be more easily controlled by the additional heating member 2638.

Hereinafter, a semiconductor manufacturing facility including the above-described substrate processing apparatus will be described. 14 is a configuration diagram showing a manufacturing facility of a semiconductor device including a substrate drying apparatus according to the embodiments of the present invention.

Referring to FIG. 14, the semiconductor device manufacturing facility 500 may include a wet process system. For example, the semiconductor device fabrication facility 500 may include substrate transfer devices 520, substrate polishing devices 530, substrate cleaning devices 540, and substrate drying devices 1.

The substrate transfer apparatus 520 moves along the guide rail 522 to transfer the substrate S to the substrate polishing apparatuses 530, the substrate cleaning apparatuses 540 and the substrate drying apparatuses 1 . The substrate S can be loaded / unloaded onto the carriers 512 on the load ports 514 by the substrate transfer apparatus 520. The load ports 514 may be disposed at one side edge of the guide rail 522.

The substrate polishing apparatuses 530 may be disposed at the other side edge of the guide rail 522 opposite to the load ports 514. When the carriers 512 transfer the substrate S to the substrate polishing apparatuses 530, the substrate polishing apparatuses 530 can polish the substrate S using a slurry (not shown). The substrate S can be planarized.

The substrate cleaning apparatuses 540 may be disposed between the substrate polishing apparatuses 530 and the substrate drying apparatuses 1. The substrate cleaning apparatuses 540 may clean the slurry on the substrate S with a cleaning solution. The cleaning solution may comprise a chemical, de-ionized water, or an organic solvent (ex, methane alcohol, or isopropylene alcohol).

The substrate drying apparatuses 1 may be disposed adjacent to the load ports 514. The substrate drying apparatuses 1 can dry the cleaning solution on the substrate S. The substrate drying apparatuses 1 can clean the substrate S using the first through third supercritical fluids 210_1, 210_2 and 210_3 to prevent the watermark or the nodule phenomenon of the substrate S. But is not limited thereto. The substrate drying apparatuses 1 may correspond to the substrate drying apparatus 1 described with reference to Figs.

Hereinafter, the substrate cleaning apparatus 540 will be described.

Fig. 15 is a sectional view of the substrate cleaning apparatus 540 of Fig.

Referring to Figs. 14 and 15, the substrate cleaning apparatus 540 includes a housing and a processing unit 5400. Fig.

The housing forms an outer wall in the substrate drying apparatus 1 and the substrate polishing apparatus 530, and the processing unit 5400 is located inside the housing to perform a cleaning process. The processing unit 5400 may include a spin head 5410, a fluid supply member 5420, a recovery cylinder 5430, and an elevating member 5440.

The substrate S is seated on the spin head 5410 and rotates the substrate S while the process is in progress. The spin head 5410 may include a support plate 5411, a support pin 5412, a chucking pin 5413, a rotation axis 5414, and a motor 5415.

The support plate 5411 is provided such that the upper portion has a shape, i.e., a circle, which is substantially similar to the substrate S. A plurality of support pins 5412 on which the substrate S is placed and a plurality of chucking pins 5413 for fixing the substrate S are formed on the support plate 5411. A rotating shaft 5414 rotated by a motor 5415 is fixedly coupled to the lower surface of the support plate 5411. The motor 5415 generates a rotational force by using an external power source and rotates the support plate 5411 through the rotation shaft 5414. Accordingly, the substrate S is seated on the spin head 5410, and the support plate 5411 rotates to rotate the substrate S during the first process.

The support pins 5412 protrude in a direction perpendicular to the upper surface of the support plate 5411, and the plurality of support pins 5412 are disposed apart from each other at predetermined intervals. The arrangement of the overall support pins 5412 when viewed from above can be in the form of an annular ring. The rear surface of the substrate S is raised on the support pin 5412. [ The substrate S is seated by the support pins 5412 at a distance at which the support pins 5412 protrude from the upper surface of the support plate 5411. [

The chucking pins 5413 protrude longer than the support pins 5412 in a direction perpendicular to the upper surface of the support plate 5411 and are disposed at positions farther from the center of the support plate 5411 than the support pins 5412. The chucking pins 5413 can move between the fixed position and the pickup position along the radial direction of the support plate 5411. [ Here, the fixed position is a distance corresponding to the radius of the substrate S from the center of the support plate 5411, and the pickup position is a position farther away from the center of the support plate 5411 than the fixed position. The chucking pins 5413 are positioned at the pick-up position when the substrate S is loaded on the spin head 5410 by the substrate transferring apparatus 520 and are moved to the fixed position when the substrate S is loaded and the process proceeds The substrate S is brought into contact with the side surface of the substrate S to fix the substrate S in the correct position and when the substrate transfer apparatus 520 picks up the substrate S and the substrate S is unloaded, . ≪ / RTI > Accordingly, the chucking pins 5413 can prevent the substrate S from being displaced from the correct position by the rotational force when the spin head 5410 rotates.

The fluid supply member 5420 may include a nozzle 5421, a support 5422, a support shaft 5423, and a driver 5424. The fluid supply member 5420 supplies fluid to the substrate S.

The support shaft 5423 is provided along a direction perpendicular to the longitudinal direction, and a driver 5424 is coupled to a lower end of the support shaft 5423. The driver 5424 rotates the support shaft 5423 or moves it up and down. A support stand 5422 is vertically coupled to the upper portion of the support shaft 5423. The nozzle 5421 is provided on the bottom surface of one end of the supporter 5422. The nozzle 5421 can move between the process position and the standby position by the rotation and elevation of the support shaft 5423 by the driver 5424. Here, the process position is a position where the nozzle 5421 is disposed at the vertical upper portion of the support plate 5411, and the standby position is the position at which the nozzle 5421 is out of the vertical upper portion of the support plate 5411.

The processing unit 5400 may be provided with one or a plurality of fluid supply members 5420. When there are a plurality of fluid supply members 5420, each fluid supply member 5420 supplies different fluids to each other. For example, the plurality of fluid supply members 5420 may respectively supply a cleaning agent, a rinsing agent, or an organic solvent. Here, as a cleaning agent, a solution of hydrogen peroxide (H 2 O 2) solution or hydrogen peroxide solution mixed with ammonia (NH 4 OH), hydrochloric acid (HCl) or sulfuric acid (H 2 SO 4) or a hydrofluoric acid (HF) solution is used. As the organic solvent, isopropyl alcohol may be used. The organic solvent may also be ethyl glycol, 1-propanol, tetra hydraulic franc, 4-hydroxy, 4-methyl, 2-pentanone, Butanol, 2-butanol, methanol, ethanol, n-propyl alcohol, dimethylether and the like can be used. For example, the first fluid supply member 5420a injects ammonia hydrogen peroxide solution, the second fluid supply member 5420b injects pure water, and the third fluid supply member 5420c injects the isopropyl alcohol solution .

The fluid supply member 5420 may move from the standby position to the process position and supply the above described fluid to the top of the substrate S when the substrate S is seated on the spin head 5410. [ For example, a chemical process, a cleaning process, and a first drying process may be performed, respectively, as the fluid supply portion supplies a cleaning agent, a rinsing agent, and an organic solvent. During the process, the spin head 5410 may be rotated by the motor 5415 so that the fluid is evenly supplied to the upper surface of the substrate S.

The recovery tank 5430 provides a space in which the first process is performed, and recovers the fluid used in the process. The recovery cylinder 5430 is arranged to surround the spin head 5410 when viewed from above, and the upper portion is opened. The processing unit 5400 may be provided with one or a plurality of recovery cans 5430. Hereinafter, a process unit 5400 having three recovery cylinders 5430 including a first recovery tank 5430a, a second recovery tank 5430b, and a third recovery tank 5430c will be described as an example. However, the number of the collection tubes 5430 may be selected differently depending on the number of fluids to be used and the conditions of the first process.

The first recovery cylinder 5430a, the second recovery cylinder 5430b, and the third collection cylinder 5430c are provided in an annular ring shape surrounding the spin head 5410, respectively. Is disposed away from the center of the spin head 5410 in the order of the first recovery cylinder 5430a, the second recovery cylinder 5430b, and the third collection cylinder 5430c. The first recovery tank 5430a surrounds the spin head 5410. The second recovery tank 5430b surrounds the first recovery tank 5430a and the third recovery tank 5430c surrounds the second recovery tank 5430b. To be wrapped. The first return tube 5430a is provided with a first inlet 5431a by an inner space of the first collection tube 5430a. A second inlet 5431b is provided in the second recovery tank 5430b by a space between the first recovery tank 5430a and the second collection tank 5430b. The third inlet 5430c is provided with a third inlet 5431c by a space between the second collection container 5430b and the third collection container 5430c. A collection line 5432 extending downward is connected to the bottom of each of the collection bins 5430a, 2430b, and 2430c in a vertical direction. Each of the recovery lines 5432a, 2432b, and 2433c discharges the recovered fluid to each of the recovery cylinders 5430a, 2430b, and 2430c, and supplies the recovered fluid to an external fluid regeneration system (not shown). A fluid regeneration system (not shown) can regenerate the recovered fluid for reuse.

The elevating member 5440 includes a bracket 5441, an elevating shaft 5442, and an elevator 5443. The elevating member 5440 moves the recovery cylinder 5430 in the vertical direction. The relative height with respect to the spin head 5410 of the collection cylinder 5430 is changed so that the inlet 5431 of one of the collection bins 5430 is positioned on the horizontal plane of the substrate S placed on the spin head 5410 . The bracket 5441 is fixed to the recovery cylinder 5430 and an elevation shaft 5442 which is moved in the vertical direction by the elevator 5443 is fixed and joined to one end of the bracket 5441. When there are a plurality of the collection bins 5430, the brackets 5441 can be coupled to the outermost collection bins 5430. The lifting member 5440 is movable in the direction of the path of the substrate transfer apparatus 520 for transferring the substrate S when the substrate S is loaded on the spin head 5410 or unloaded from the spin head 5410. [ It is possible to move the collection container 5430 downward so as not to interfere with the container 5430. [

The lifting member 5440 is moved by centrifugal force from the substrate S in accordance with the rotation of the substrate S while the fluid is supplied by the fluid supply unit and the spin head 5410 rotates to perform the first process It is possible to adjust the inlet 5431 of the recovery container 5430 to be positioned on the same horizontal plane as the substrate S by moving the recovery container 5430 in a vertical direction so as to recover the fluid. For example, when the first process is performed by a chemical process using a cleaning agent, followed by a cleaning process using a rinsing agent, and then followed by a first drying process using an organic solvent, when the cleaning agent is supplied, The first inlet 5431a is moved to the horizontal plane of the substrate S while the second inlet 5431b is supplied to supply the organic solvent and the third inlet 5431c is supplied to the first and second collecting cylinders 5430a, The recovery tank 5430b, and the third recovery tank 5430c can collect the respective fluids. As described above, recovery of the used fluid is advantageous in that the environmental pollution is prevented and the expensive fluid can be recycled, thereby reducing the manufacturing cost of the semiconductor.

On the other hand, the elevating member 5440 may have a structure for moving the spin head 5410 in a vertical direction instead of moving the recovery cylinder 5430. [

Hereinafter, the substrate drying method using the above-described substrate drying apparatus will be described. 16 is a flowchart for explaining a substrate drying method using a substrate drying apparatus according to embodiments of the present invention. In this embodiment, a substrate processing process for performing a supercritical drying process on a substrate, which has been exemplified as a wet cleaning process, is disclosed. However, it is apparent that the present invention can be applied to various substrate processing processes such as a cleaning process performed on a substrate on which an etching process is completed.

1 to 12 and 15, when a substrate S is provided to the process chamber 100, the process chamber 100 heats the substrate S to a first temperature T1 (S110) . For example, the substrate S may have been subjected to a wet process such as etching or cleaning in the process chamber 100 for wet process according to the stage of the semiconductor manufacturing process, and may be a fine pattern having a high aspect ratio such as an aspect ratio of 10 to 50 Structure. The fine pattern structure may be formed to have a high aspect ratio through an etching process on a multilayer film formed on a semiconductor substrate such as a wafer, and a cleaning and rinsing process may be performed to remove etch residues and byproducts. For example, a substrate S having a fine pattern structure with a high aspect ratio is cleaned by a chemical of deionized water, hydrofluoric acid, buffered oxide etchant (BOE), ammonia water, hydrogen peroxide water, and the first to third supercritical fluids 210_1 , 210_2, 210_3) or may be rinsed with an organic solvent of isopropyl alcohol (IPA). The process chamber 100 may heat the substrate S to a first temperature (T1) of about 40 ° C to 80 ° C below the vaporization point of the isopropylene alcohol.

Supercritical fluid supply unit 200 provides a first supercritical fluid 210_1 within process chamber 100 (S120). The first supercritical fluid 210_1 may have a second temperature T2 lower than the first temperature T1. The second temperature (T2) may be from about 30 캜 to about 39 캜 (ex, 31.1 캜). If the first supercritical fluid 210_1 is provided, the pressure in the process chamber 100 may increase. For example, the first supercritical fluid 210_1 may be provided in the process chamber 100 up to a pressure of the critical point 217. The first supercritical fluid 210_1 may be provided for about 20 seconds to about 30 seconds in the process chamber 100.

When the pressure of the critical point 217 of the first supercritical fluid 210_1 is reached, the supercritical fluid supply unit 200 provides the second supercritical fluid 210_2 in the process chamber 100 (S130). The pressure at the critical point 217 of the first supercritical fluid 210_1 may be about 72 bar. The second supercritical fluid 210_2 may have a third temperature T3 that is higher than the first temperature T1. The third temperature T3 may be between about 100 [deg.] C and about 200 [deg.] C. When the second supercritical fluid 210_2 is provided, the pressure in the process chamber 100 may increase. For example, the pressure in process chamber 100 may increase to saturation interval S214. The pressure of the saturation section S214 may be the critical point of the second supercritical fluid 210_2. For example, the pressure in the saturation interval S214 may be about 150 bar. The second supercritical fluid 210_2 may be provided in the process chamber 100 for about 10 seconds to about 20 seconds. For example, when the process chamber 100 heats the first supercritical fluid 210_1 to about 100 ° C or more, the first supercritical fluid 210_1 may generate a large amount of particles to cause the substrate S and / The process chamber 100 can be contaminated.

When the pressure in the process chamber 100 reaches the saturation interval S214, the supercritical fluid supply unit 200 provides the third supercritical fluid 210_3 in the process chamber 100 (S140). The third supercritical fluid 210_3 may have a fourth temperature T4 equal to the first temperature T1. The fourth temperature T4 may be from about 40 [deg.] C to about 80 [deg.] C. The third supercritical fluid 210_3 can dry the organic solvent of the substrate S. [ The third supercritical fluid 210_3 may be provided in the process chamber 100 for about 100 seconds.

When the pressure in the process chamber 100 reaches the falling section S216, after the supply of the first through third supercritical fluids 210_1, 210_2 and 210_3 is stopped, the first through third supercritical fluids 210_1 , 210_2, and 210_3 are exhausted through the exhaust line 242 (S150). The pressure in the process chamber 100 may decrease. The first to third supercritical fluids 210_1, 210_2 and 210_3 may be evacuated for about 150 seconds. The first to third supercritical fluids 210_1, 210_2 and 210_3 can cause the first to third supercritical fluids 210_1, 210_2 and 210_3 to dry the substrate S without a watermark and / While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. It can be understood that It is therefore to be understood that the above-described embodiments are illustrative and not restrictive in every respect.

Claims (20)

A chamber for drying the substrate to a first temperature;
A first storage for storing a first supercritical fluid having a second temperature lower than the first temperature;
A second storage for storing a second supercritical fluid having a third temperature higher than the first temperature; And
And a supply connected between the first and second reservoirs and the chamber and supplying the first supercritical fluid and the second supercritical fluid into the chamber.
The method according to claim 1,
Wherein the supply unit sequentially supplies the first and second supercritical fluids into the chamber to increase the pressure in the chamber.
In the second aspect,
Wherein the supply section supplies the second supercritical fluid into the process chamber when the first supercritical fluid in the process chamber reaches a critical point.
The method of claim 3,
Wherein the critical point is 72 bar when the second temperature is < RTI ID = 0.0 > 31 C. < / RTI >
The method according to claim 1,
Wherein the first temperature is 40 占 폚 to 80 占 폚.
6. The method of claim 5,
And a third reservoir for storing a fourth supercritical fluid having the first temperature.
The method according to claim 1,
Wherein the supply section supplies the third supercritical fluid into the process chamber when the second supercritical fluid reaches a pressure in the saturation section.
8. The method of claim 7,
Wherein the pressure of the saturation section is 150 bar.
The method according to claim 1,
Wherein the supply unit comprises:
Supply lines connecting the first and second reservoirs to the chamber;
Valves coupled to the supply lines for interrupting supply of the first and second supercritical fluids; And
And a filter coupled to the supply lines to filter contaminants in the first and second supercritical fluids.
10. The method of claim 9,
Wherein each of the filters comprises a metal sintered filter.
A substrate polishing apparatus for polishing a substrate;
A substrate cleaning apparatus for cleaning the substrate; And
And a substrate drying apparatus for drying the substrate,
Wherein the substrate drying apparatus comprises:
A chamber for drying the substrate to a first temperature;
A first storage for storing a first supercritical fluid having a second temperature lower than the first temperature;
A second storage for storing a second supercritical fluid having a third temperature higher than the first temperature; And
And a supply part connected between the first and second reservoirs and the chamber and supplying the first supercritical fluid and the second supercritical fluid into the chamber.
12. The method of claim 11,
The substrate cleaning apparatus may further comprise: rinsing the substrate with isopropyl alcohol,
Wherein the first temperature is lower than the vaporization temperature of the isopropyl alcohol.
13. The method of claim 12,
Wherein the first temperature is 40 占 폚 to 80 占 폚.
14. The method of claim 13,
And the second temperature is 30 占 폚 to 39 占 폚.
14. The method of claim 13,
And the third temperature is 100 占 폚 to 200 占 폚.
Heating the substrate in the chamber to a first temperature;
Providing a first supercritical fluid on the substrate having a second temperature below the first temperature; And
And providing a second supercritical fluid having a third temperature above the first temperature on the substrate.
17. The method of claim 16,
Wherein when the first supercritical fluid reaches a critical point, the second supercritical fluid is provided on the substrate.
18. The method of claim 17,
Wherein the critical point is 72 bar when the second temperature of the first supercritical fluid is < RTI ID = 0.0 > 31 C. < / RTI >
17. The method of claim 16,
Wherein the first temperature is between 40 ° C and 80 ° C, and the third temperature is between 100 ° C and 200 ° C.
17. The method of claim 16,
And when the second supercritical fluid reaches a saturation pressure, providing a third supercritical fluid on the substrate having a fourth temperature equal to the first temperature.

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