KR20180101033A - Deposition apparatus based on 4-divided domain chamber, deposition system based on multi-divided domain chamber, and deposition method thereof - Google Patents

Abstract

The present invention relates to a deposition apparatus based on a 4-division chamber, a deposition system based on a multi-division chamber, and a deposition method using the same. The deposition apparatus based on a 4-division chamber comprises a fourth chamber; a third chamber (130) having a transfer robot (130a) formed thereon; a first chamber (110); a second chamber (120); and a deposition apparatus main body (100a). An upper transfer robot may continuously perform multi-supply of a semiconductor substrate, such as a mask for deposition or a glass substrate, for each division chamber.

Description

TECHNICAL FIELD [0001] The present invention relates to a chamber-based deposition apparatus, a multi-chamber deposition system, and a deposition method using the same. [0002]

More particularly, the present invention relates to a multi-chamber deposition system, and more particularly, to a multi-chamber deposition system and a multi-chamber deposition system using the same. More particularly, A chamber-based deposition apparatus, a multiple division chamber-based deposition system, and a deposition method using the same, which are capable of continuously supplying a semiconductor substrate such as a glass substrate or a glass substrate.

Deposition refers to the formation of a thin film such as CVD, PVD, or evaporation on the surface of a substrate such as a wafer for semiconductor manufacturing, a substrate for LCD manufacturing, or a substrate for OLED manufacturing.

In the case of a substrate for manufacturing an OLED, a process for forming a thin film on the surface of a substrate by evaporating an organic material, an inorganic material, or a metal in the deposition of a deposition material is widely used.

The evaporator for evaporating the evaporation material to form a thin film includes a chamber in which the evaporation donor substrate is loaded and a deposition region for evaporating the evaporation material to evaporate the evaporation material to the substrate to evaporate the evaporation material, Lt; / RTI >

In addition, the deposition region of the OLED evaporator is configured to evaporate the evaporation material to evaporate the evaporation material on the substrate, and various structures are possible according to the evaporation method.

On the other hand, OLED manufacturing substrates are becoming larger in productivity, and OLED evaporators for manufacturing OLED manufacturing substrates are also becoming larger in accordance with demand of large panels, and deposition must be performed several times.

Accordingly, in the related art, there is a desperate need for an optimized structure capable of performing a multi-layer thin film deposition process, which is a deposition process of a plurality of times during the deposition of an OLED, in a single mechanical configuration.

Korean Patent Laid-Open Publication No. 10-2015-0104419 "Nozzle of linear source for OLED deposition apparatus" Korean Patent Registration No. 10-1416590 entitled " Opening and closing apparatus of OLED evaporation device " Korean Patent Laid-Open Publication No. 10-2014-0115484 entitled " An apparatus for aligning substrates in OLED deposition system "

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a transfer robot for transferring a semiconductor substrate such as a multi- A multi-chamber chamber-based deposition system, and a deposition method using the same.

In addition, since each chamber can be used independently in deposition on a semiconductor substrate such as a mask or a glass substrate in each vapor deposition region, the vapor deposition apparatus 4 having a single vapor deposition region A chamber-based deposition apparatus, a multi-chamber-based deposition system, and a deposition method using the chamber-based deposition apparatus.

Further, the present invention can connect the deposition apparatus having the quadrant chamber and the quadrant chamber to the structure capable of automatically distributing to each deposition zone in series or in parallel, so that the connection can be made infinite so that when a circular chamber is used A chamber-based deposition apparatus, a multi-chamber-based deposition system, and a deposition method using the chamber-based deposition apparatus.

In addition, the present invention requires at least four materials to be deposited for the vacuum deposition of an OLED. In the past, a single material was deposited in one chamber at a time, which took a long time and necessitated replacement with a new material. A quadrant chamber-based deposition apparatus, a multi-chamber-based deposition system, and a deposition system using the same, to solve the problems and to be able to automatically distribute to the quadrant chamber and each deposition zone, thereby shortening the time and solving the hassle. And to provide a deposition method.

However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a quartz-chamber-based deposition apparatus including: a fourth chamber; A third chamber 130 formed with a transfer robot 130a; A first chamber 110 formed to stack semiconductor substrates 1 to n (n is a natural number of 2 or more) from the top and formed on one outer surface about the third chamber 130; When the semiconductor substrate stacked in the first chamber 110 is transferred by the transfer robot 130a formed in the third chamber 130, the transferred semiconductor substrate is cleaned and etched by the plasma surface treatment A second chamber (120) for holding the second chamber (120); And a third chamber 130 and first to fourth deposition areas 151 to 154 are formed on the upper surface of the semiconductor substrate and the semiconductor substrate having been cleaned and etched in the second chamber 120, Is transferred from the transfer robot 130a controlled by the transfer robot 130a to the first deposition area 151 and is divided on the transferred semiconductor substrate about the third chamber 130 in which the transfer robot 130a is formed A space for performing unloading from the fourth deposition region 154 to the fourth chamber after the deposition is performed in the four deposition regions 4 zones in which the deposition is performed using different materials is performed A main body 100a of the deposition apparatus; . ≪ / RTI >

In this case, the first chamber 110 may be formed at a position orthogonal to the second chamber 120 and the deposition apparatus main body 100a .

In addition, in the quadrant chamber-based deposition apparatus according to another embodiment of the present invention, the second chamber 120 includes a first chamber 110 and a second chamber 110 between the first chamber 110 and the fourth chamber 130, And the fourth chamber 130 are formed at positions orthogonal to the third chamber 130 so as to load the semiconductor substrate transferred from the first chamber 110 by the transfer robot 130a, It is preferable to provide a space to be transferred to the first deposition region 151 for each deposition process by the transfer robot 130a after completion of the etching process.

In addition, in the quadrant chamber-based deposition apparatus according to yet another embodiment of the present invention, the transfer robot 130a controls the first chamber 110 to the second chamber 110 for each semiconductor substrate under the control of the controller 160, Movement from the second chamber 120 to the first deposition region 151, movement from the first deposition region 151 to the second deposition region 152, movement to the second deposition region 152 ) To the third deposition region 153, the third deposition region 153 to the fourth deposition region 154, and the fourth deposition region 154 to the fourth chamber 140 .

In addition, in the quartz chamber-based deposition apparatus according to another embodiment of the present invention, the fourth chamber 140 may be configured such that the transfer robot 130a of the third chamber 130 is connected to the first to fourth deposition regions 151 to 154 for performing the unloading on the semiconductor substrate after the first to fourth deposition processes, and the second chamber 130 is formed around the third chamber 130 of the deposition apparatus main body 100a, Is formed at a position spaced by 90 [deg.] In the clockwise direction from the base plate 120.

In addition, in the quadrant chamber-based deposition apparatus according to another embodiment of the present invention, the first deposition region 151 may be formed by a first deposition process for the semiconductor substrate that has been cleaned and etched in the second chamber 120 It is preferable that the third chamber 130 is formed in the third quadrant of the quadrant of the plane of the deposition apparatus main body 100a formed.

In addition, in the quadrant chamber-based deposition apparatus according to another embodiment of the present invention, the second deposition region 152 may be formed in the first deposition region 151, The transfer robot 130a of the chamber 130 performs a second deposition process in which the first chamber 130a is divided into four quadrants on the plane of the deposition apparatus main body 100a on which the third chamber 130 is formed, And is formed at an upward position about the deposition region 152.

In addition, in the quadrant chamber-based deposition apparatus according to another embodiment of the present invention, the third deposition region 153 is formed in the second deposition region 152, The third deposition process is performed by the transfer robot 130a of the chamber 130 and a second deposition process is performed in a quadrant of the quadrant of the quadrant on the plane of the deposition apparatus main body 100a in which the third chamber 130 is formed. And is formed at a position in the rightward direction with respect to the region 152.

Further, in the quadrant chamber-based deposition apparatus according to another embodiment of the present invention, the fourth deposition region 154 is formed in the third deposition region 153 with respect to the third semiconductor substrate on which the second deposition process is performed, The third deposition process is performed by the transfer robot 130a of the chamber 130 and a third deposition process is performed on the plane of the deposition apparatus main body 100a on which the third chamber 130 is formed, The first chamber 110 and the second chamber 120 are formed at a position downward about the region 153 and relatively closer to the fourth chamber 140 than the first chamber 110 and the second chamber 120.

In a quartz-chamber-based deposition apparatus, a multiple division chamber-based deposition system, and a deposition method using the same, an upper transfer robot is installed on an upper portion of the deposition chamber, Can be continuously supplied for each of the divided chambers.

Further, the quartz chamber-based deposition apparatus, the multiple division chamber-based deposition system, and the deposition method using the quartz-chamber-based deposition apparatus according to another embodiment of the present invention may be applied to a semiconductor substrate such as a mask or glass substrate in each deposition region It is possible to provide the effect of providing four deposition units having one deposition region in a cluster system because each chamber can be used independently.

In addition, according to another embodiment of the present invention, a quartz-chamber-based deposition apparatus, a multi-chamber-based deposition system, and a deposition method using the same are provided with a quartz chamber and an automatically distributable structure The deposition apparatus having a quadrant chamber can be connected in series or in parallel and can be connected in an endless manner to provide an advantage of providing layout advantages for space use compared with a case using a circular chamber.

In addition, according to another embodiment of the present invention, a quartz chamber-based deposition apparatus, a multi-chamber-based deposition system, and a deposition method using the same are required to deposit at least four materials for vacuum deposition of an OLED, Conventionally, a single substance is deposited in one chamber at a time, which takes a long time and can be automatically distributed to the quartz chamber and each deposition region by solving the troublesome and inefficient problems such as the necessity of replacing with a new substance, And it is possible to solve the troublesomeness.

FIG. 1 is a block diagram showing the main components of a subdivision chamber-based deposition apparatus 100 according to an embodiment of the present invention.
2 is a plan view showing a deposition apparatus 100 based on the quadrant chamber of FIG.
3 is a flowchart illustrating a deposition method based on a quadrant chamber-based deposition apparatus 100 according to an embodiment of the present invention.
FIG. 4 is a view showing that a quartz chamber-based deposition apparatus 100 according to an embodiment of the present invention is systematically connected in parallel.
Figure 5 is a block diagram illustrating the major components of the multi-chambered deposition system of Figure 4;

The present invention can be variously modified and may have various embodiments, and specific embodiments will be described in detail with reference to the drawings. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another.

For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the meaning in the context of the relevant art and are to be construed as ideal or overly formal in meaning unless explicitly defined in the present application Do not.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a quasi-chamber-based deposition apparatus and a deposition method according to the present invention will be described with reference to the accompanying drawings. In this process, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation. In addition, the terms described below are defined in consideration of the functions of the present invention, which may vary depending on the intention or custom of the user, the operator. Therefore, definitions of these terms should be made based on the contents throughout this specification.

FIG. 1 is a block diagram showing the main components of a subdivision chamber-based deposition apparatus 100 according to an embodiment of the present invention. 2 is a plan view showing a deposition apparatus 100 based on the quadrant chamber of FIG.

Referring to FIGS. 1 and 2, a quadrant chamber-based deposition apparatus 100 includes a deposition apparatus body 100a, a first chamber 110, a second chamber 120, A third chamber 130, a transfer robot 130a, a fourth chamber 140, a first deposition region 151, a second deposition region Deposition # 2, 152, a third deposition region 153, a fourth deposition region 154, and a control unit 160.

Herein, the deposition apparatus main body 100a is configured such that the first to fourth deposition regions 151 to 154 are disposed on the transfer robot 130a of the third chamber 130 among the upper planes of the deposition apparatus main body 100a Thereby forming four deposition regions (4 zones). Because of this structure, the first to fourth chambers 110 to 140 can be used independently in the vapor deposition apparatus main body 100a when depositing the vapor deposition mask on each vapor deposition mask or a semiconductor substrate such as a glass substrate, It is possible to provide the effect of four deposition apparatuses having one deposition region as a cluster system.

 The first chamber 110 is formed for loading 1 to n semiconductor substrates (n is a natural number of 2 or more) from the top and is formed on one outer surface about the third chamber 130, And is formed at a position orthogonal to the second chamber 120, which will be described later, about the evaporation apparatus main body 100a.

The second chamber 120 may be configured such that when the semiconductor substrate loaded in the first chamber 110 is transferred by the transfer robot 130a formed in the third chamber 130, (Plasma Treatment). The second chamber 120 is positioned between the first chamber 110 and the fourth chamber 130 such that both the first chamber 110 and the fourth chamber 130 are positioned at a position orthogonal to the third chamber 130 The semiconductor substrate transferred from the first chamber 110 by the transfer robot 130a is loaded and then the transfer robot 130a again performs a first deposition process for each deposition process, Area 151 to be transported.

In the second chamber 120, an etching process and a cleaning process for etching and patterning the semiconductor thin film are performed. Among them, the semiconductor manufacturing facility for performing the etching process can be divided into a wet etching facility and a dry etching facility. There is a plasma processing apparatus using a plasma gas.

Typically, the plasma processing apparatus provided in the second chamber 120 includes a process chamber, a gas supply unit installed inside the process chamber to supply a source gas necessary for generating a plasma gas into the process chamber, An electrode unit including a cathode electrode and an anode electrode provided so as to face the electrode; and gas distributing means for uniformly injecting the source gas supplied from the gas supply unit toward the wafer.

RF power is applied to the anode electrode during the etching process using the plasma processing apparatus.

Therefore, a large amount of particles are generated in the process chamber of the conventional plasma processing apparatus due to the stress caused by the RF power applied to the anode electrode, and the particles are deposited on the inner wall of the process chamber or on the surface of other components do.

The particles also flow into the chamber through the source gas and also from the wafer during the plasma processing process.

However, the particles must be periodically cleaned to prevent yield loss due to wafer contamination. After the wafer is etched, the chamber is cleaned by a wet cleaning process with the etching chamber being opened to the atmosphere.

And, after wet cleaning, the chamber and its inner surface are pumped down for a long period of time to provide consistent chamber characteristics. In the pumped-down process, the chamber is pumped down to a high vacuum environment for a predetermined time to evacuate moisture and other volatile species trapped in the chamber during the wet cleaning process. A series of etching processes can then be performed on the dummy wafer and seasoned.

Next, a third chamber 130 is formed in a central region of the upper surface of the deposition apparatus main body 100a, and a transfer robot 130a is formed.

Accordingly, the transfer robot 130a moves from the first chamber 110 to the second chamber 120 with respect to each semiconductor substrate under the control of the controller 160, the transfer from the second chamber 120 to the first deposition region 151, move from the first deposition area 151 to the second deposition area 152, move from the second deposition area 152 to the third deposition area 153, the third deposition area 153 To the fourth deposition region 154, and from the fourth deposition region 154 to the fourth chamber 140. In this case,

The fourth chamber 140 is connected to the transfer robot 130a of the third chamber 130 on the semiconductor substrate after the first to fourth deposition processes in the first to fourth deposition regions 151 to 154 And is formed at a position spaced by 90 degrees clockwise from the second chamber 120 about the third chamber 130 of the deposition apparatus main body 100a.

The first deposition region (Deposition # 1) 151 is formed in the second chamber 120 in order to perform a first deposition process for the semiconductor substrate cleaned and etched in the second chamber 120, Can be formed in the triple quadrant region of the quadrant on the plane of the substrate 100a.

When the second deposition region 152 is transferred by the transfer robot 130a of the third chamber 130 to the semiconductor substrate on which the first deposition process has been performed in the first deposition region 151, The deposition process proceeds. For this, the second deposition area 152 is located at an upward position about the first partial deposition area 152 in the quadrant of the quadrant on the plane of the deposition apparatus main body 100a having the third chamber 130 formed therein .

When the third deposition region 153 is transported by the transfer robot 130a of the third chamber 130 to the semiconductor substrate on which the second deposition process has been performed in the second deposition region 152, The deposition process proceeds. To this end, the third deposition region 153 is positioned in a quadrant of the quadrant of the deposition apparatus main body 100a on which the third chamber 130 is formed, that is, a position in the rightward direction around the second deposition region 152 As shown in FIG.

The fourth deposition region 154 is transferred from the third deposition region 153 to the semiconductor substrate on which the second deposition process has been performed by the transfer robot 130a of the third chamber 130, The deposition process proceeds. For this, the fourth deposition region 152 is located in a quadrant of the quadrant of the deposition apparatus main body 100a on which the third chamber 130 is formed, that is, a downward position about the third deposition region 153 And may be formed at a position relatively closer to the fourth chamber 140 than the first chamber 110 and the second chamber 120.

3 is a flowchart illustrating a deposition method based on a quadrant chamber-based deposition apparatus 100 according to an embodiment of the present invention.

Referring to FIG. 3, the controller 160 controls the stacking of the first to n semiconductor substrates in the first chamber 110 (S11).

After step S11, the controller 160 controls the transfer robot 130a of the third chamber 130 to move the first semiconductor substrate loaded on the uppermost layer of the first chamber 110 to the second chamber The second chamber 120 is cleaned and etched by plasma treatment (S12).

In the step S12, the first chamber 110 and the second chamber 120 are formed on the other outer surface of the evaporation apparatus body 100a, respectively, Referring to FIG. 1, the first chamber 110 may be positioned on the left side of the deposition apparatus main body 100a, and the second chamber 110 may be positioned on the upper side of the deposition apparatus main body 100a.

After the step S12, the controller 160 controls the transfer robot 130a to load the first semiconductor substrate of the second chamber 120 into the first deposition area 151 and then performs the first deposition process (S13). Here, the first deposition area 151 is formed in the third quadrant area with respect to the plane of the evaporation apparatus main body 100a, and the first deposition area 151 is formed in a 90 ° counterclockwise direction from the position of the second chamber 120 about the third chamber 130 To 180 DEG, preferably 120 DEG.

Meanwhile, in step S13, the controller 160 controls the transfer robot 130a of the third chamber 130 during the first deposition process after loading the first semiconductor substrate into the first deposition area 151 And the second semiconductor substrate corresponding to the first semiconductor substrate mounted on the first chamber 110 is charged into the second chamber 120 and cleaned and etched by the plasma surface treatment.

After step S13, the controller 160 controls the transfer robot 130a to load the first semiconductor substrate in the first deposition area 151, which has been subjected to the first deposition process, to the second deposition area 152, Then, the second deposition process is performed (S14).

Here, the second deposition area 152 is formed in the movable partition surface region with respect to the plane of the deposition apparatus main body 100a, and is spaced from the first deposition area 151 in the clockwise direction about the third chamber 130 Is preferably formed at a position between 占 0 and 115 占 preferably 90 占.

During the second deposition process after the first semiconductor substrate is loaded into the second deposition region 152 in step S14, the controller 160 controls the plasma processing in the second chamber 120 The second semiconductor substrate is cleaned and etched by the first deposition region 151 and then the first deposition process is performed.

After the second semiconductor substrate is loaded into the first deposition area 151 in step S14 and the first deposition process is in progress, the controller 160 controls the transfer robot 130a to move the first chamber 110, The third semiconductor substrate corresponding to the second semiconductor substrate subordinate to the second semiconductor substrate 120 is loaded into the second chamber 120 to perform cleaning and etching by plasma treatment.

After the step S14, the controller 160 controls the transfer robot 130a to load the first semiconductor substrate, which has undergone the second deposition process, in the second deposition area 152 into the third deposition area 153, 3 deposition process (S15). Here, the third deposition region 154 is formed in the first quadrant region with respect to the plane of the deposition apparatus main body 100a, and extends from the position of the second deposition region 152 in the clockwise direction about the third chamber 130 Is preferably formed at a position between 占 0 and 115 占 preferably 90 占.

In step S15, the controller 160 loads the first semiconductor substrate into the third deposition area 153 and then performs the third deposition process. In addition, the controller 160 controls the second deposition area 151 to perform the second deposition The transfer robot 130a is controlled so as to load the semiconductor substrate into the second deposition region 153 to proceed the second deposition process.

In addition, in step S15, the controller 160 controls the second semiconductor substrate to be cleaned and etched by the plasma treatment in the second chamber 120, Is loaded into the first deposition region 151 under the control of the transfer robot 130a to control the first deposition process to proceed.

The control unit 160 controls the transfer robot 130a to move the fourth semiconductor substrate loaded in the first chamber 110 to the second chamber 110 in the second deposition process of the third semiconductor substrate in step S15, And the plasma is put into the chamber 120 to perform cleaning and etching by the plasma surface treatment.

After the step S15, the controller 160 controls the transfer robot 130a to load the first semiconductor substrate, which has undergone the third deposition process, in the third deposition area 153 into the fourth deposition area 154, 4 deposition process (S15). Herein, the fourth deposition area 154 is formed in a quadrant of the deposition apparatus main body 100a with respect to the plane. The fourth deposition area 154 extends from the position of the third deposition area 153 in the clockwise direction about the third chamber 130 The first chamber 110 and the second chamber 120 may be formed at a position between the first chamber 110 and the second chamber 120, desirable.

In step S15, the controller 160 proceeds to the fourth deposition area 153 of the first semiconductor substrate and the second deposition area 151 in the second deposition area 151, The third deposition region 153 is loaded with respect to the third deposition process.

In step S15, the control unit 160 controls the transfer robot 130a in conjunction with the third deposition process of the second semiconductor substrate to perform the third deposition process in the first deposition zone 153, After the semiconductor substrate is loaded into the second deposition region 152, the second deposition process is controlled to proceed.

In addition, in step S15, the controller 160 controls the fourth semiconductor substrate, which has been cleaned and etched by the plasma surface treatment in the second chamber 120, during the second deposition process of the third semiconductor substrate And is loaded into the first deposition area 151 under the control of the transfer robot 130a to proceed with the first deposition process.

The control unit 160 controls the transfer robot 130a while the first deposition process is being performed in the first deposition area 151 to control the temperature of the fourth semiconductor substrate The fifth semiconductor substrate of a subordinate order is put into the second chamber 120 to perform cleaning and etching by the plasma surface treatment.

After step S15, the controller 160 controls the transfer robot 130a to unload the first semiconductor substrate, which has undergone the fourth deposition process in the fourth deposition area 154, into the fourth chamber 140 (Step S16).

In step S16, the controller 160 sequentially cleans and etches the second to fifth semiconductor substrates corresponding to the rear semiconductor substrate, and the sixth to n-th semiconductor substrates, When the deposition process is completed, unloading is performed to the fourth chamber 140.

FIG. 4 is a view showing that a quartz chamber-based deposition apparatus 100 according to an embodiment of the present invention is systematically connected in parallel. Figure 5 is a block diagram illustrating the major components of the multi-chambered deposition system of Figure 4;

Referring to FIGS. 4 and 5, the multi-chamber-based deposition system may be configured such that the first quadrant chamber-based deposition apparatus 200 and the second quadrant chamber-based deposition apparatus 300 are connected in parallel . First, in the multi-chambered deposition system, the first quadrant chamber-based deposition apparatus 200 includes a first deposition apparatus body 100a, a first chamber 110, a second chamber 120, a third chamber A first transfer robot 130a, a buffer chamber 140a, a first deposition region 151, a second deposition region 152, a third deposition region 153, 1 to 3 and the deposition method based thereon are performed by using the quartz chamber-based deposition apparatus 100 and the control unit 160. The buffer chamber 140a is formed instead of the fourth chamber 140, Can be used.

Here, the buffer chamber 140a is a chamber in which the semiconductor substrate unloading of the first quadrant chamber-based deposition apparatus 200, the chamber commonly used for the semiconductor substrate loading of the second quadrant chamber-based deposition apparatus 300, to be.

Accordingly, the deposition apparatus 300 based on the second quadrant chamber does not have a chamber for loading, and the second deposition apparatus main body 100a ', the second' chamber 120 ', the third' The first 'deposition region 151', the second 'deposition region 152', the third 'deposition region 153', the second transfer robot 130a ', the fourth' chamber 140b, ), And a fourth 'deposition region 154'.

3, the controller 160 may perform the first to fourth deposition on the semiconductor substrate, and then perform the second to fourth deposition on the second quadrant chamber-based deposition apparatus 200. In this case, It is possible to unload the multi-deposited semiconductor substrate to the fourth chamber 140b by controlling the fifth through eighth deposition to be repeatedly performed again in the deposition apparatus 300. [

As described above, preferred embodiments of the present invention have been disclosed in the present specification and drawings, and although specific terms have been used, they have been used only in a general sense to easily describe the technical contents of the present invention and to facilitate understanding of the invention , And are not intended to limit the scope of the present invention. It is to be understood by those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

100: Quadrant chamber-based deposition apparatus
100a: evaporation apparatus main body, first evaporation apparatus main body
100a ': a second evaporation apparatus body
110: 1st chamber
120: 2nd chamber
120 ': second chamber
130: Third chamber (3rd chamber)
130 ': Third chamber
130a: transfer robot, first transfer robot
130a ': the second transfer robot
140: Fourth chamber (4th chamber)
140a: buffer chamber
140b: fourth chamber
151: a first deposition region (Deposition # 1)
151 ': first' deposition region
152: second deposition area (Deposition # 2)
152 ': second' deposition area
153: Deposition region 3 (Deposition # 3)
153 ': third deposition region
154: fourth deposition region (Deposition # 4)
154 ': Fourth deposition area
160:
200: First Quarter Chamber-Based Deposition Device
300: Second Quarter-chamber-based deposition apparatus

Claims (9)

A fourth chamber (4th chamber);
A third chamber 130 formed with a transfer robot 130a;
A first chamber 110 formed to stack semiconductor substrates 1 to n (n is a natural number of 2 or more) from the top and formed on one outer surface about the third chamber 130;
When the semiconductor substrate stacked in the first chamber 110 is transferred by the transfer robot 130a formed in the third chamber 130, the transferred semiconductor substrate is cleaned and etched by the plasma surface treatment A second chamber (120) for holding the second chamber (120); And
The third chamber 130 and the first to fourth deposition areas 151 to 154 are formed on the upper surface of the semiconductor substrate and the semiconductor substrate cleaned and etched in the second chamber 120 is transferred to the controller 160 The transfer robot 130a is controlled by the transfer robot 130a and is transferred to the first deposition area 151. The transfer chamber 130 is divided into a third chamber 130 in which the transfer robot 130a is formed, The deposition is performed in four deposition zones (4 zones) for performing deposition with different materials, and then a space is provided for performing unloading from the fourth deposition zone (154) to the fourth chamber (4th chamber) A deposition apparatus main body 100a; Wherein the deposition chamber comprises a first chamber and a second chamber.
2. The apparatus of claim 1, wherein the first chamber (110)
Is formed at a position orthogonal to the second chamber (120) and the deposition apparatus main body (100a).
The apparatus of claim 2, wherein the second chamber (120)
Between the first chamber 110 and the fourth chamber 130, both the first chamber 110 and the fourth chamber 130 are formed at positions orthogonal to the third chamber 130, After the semiconductor substrate transferred from the first chamber 110 is loaded by the transfer robot 130a after the cleaning and etching process, the transfer robot 130a transfers the semiconductor substrate to the first deposition region 151 for each deposition process. Wherein the deposition chamber is provided with a space for the deposition chamber.
The transfer robot (130a) according to claim 1,
Movement from the first chamber 110 to the second chamber 120 with respect to each semiconductor substrate under control of the control unit 160, movement from the second chamber 120 to the first deposition region 151, Movement from the first region 151 to the second deposition region 152, from the second deposition region 152 to the third deposition region 153, and from the third deposition region 153 to the fourth deposition region 154, To the fourth chamber (140), and to move from the fourth deposition area (154) to the fourth chamber (140).
The apparatus of claim 1, wherein the fourth chamber (140)
The transfer robot 130a of the third chamber 130 is formed to perform the unloading of the semiconductor substrate after the first to fourth deposition processes in the first to fourth deposition regions 151 to 154 And is formed at a position spaced 90 ° clockwise from the second chamber 120 about the third chamber 130 of the deposition apparatus main body 100a.
The method according to claim 1, wherein the first deposition area (151)
In order to proceed with the first deposition process for the semiconductor substrate that has been cleaned and etched in the second chamber 120, the third chamber 130 is formed on the plane of the deposition apparatus main body 100a in the third quadrant of the quadrant Wherein the deposition chamber is formed with a plurality of chambers.
The method of claim 6, wherein the second deposition region (152)
The third chamber 130 is transferred to the semiconductor substrate having undergone the first deposition process in the first deposition area 151 by the transfer robot 130a of the third chamber 130, Is formed on a plane of the deposition apparatus main body (100a) formed on the first deposition region (152) at an upward position around the first deposition region (152) in a quadrant of the quadrant.
8. The method of claim 7, wherein the third deposition region (153)
The third deposition process is performed by the transfer robot 130a of the third chamber 130 with respect to the semiconductor substrate on which the second deposition process has been performed in the second deposition area 152, Is formed at a position on the right side of the second deposition region (152) which is a quadrant of the quadrant of the quadrant on the plane of the formed deposition apparatus main body (100a).
The method of claim 8, wherein the fourth deposition region (154)
The third deposition chamber 153 is transferred to the semiconductor substrate on which the second deposition process has been performed by the transfer robot 130a of the third chamber 130 and the fourth deposition process is performed, The deposition chamber is formed at a downward position around a third deposition region 153 which is a quadrant of the quadrant of the formed deposition apparatus main body 100a and is formed at a lower position relative to the first chamber 110 and the second chamber 120, And is formed at a position adjacent to the fourth chamber (140).

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