KR20180091785A - Vapor deposition apparatus and method for manufacturing organic light emitting display apparatus - Google Patents

Abstract

The present invention relates to a vapor deposition apparatus which is able to perform efficient deposition process, is able to easily improve a feature of a deposition film, and is for depositing a thin film on a substrate, comprising: a main body portion provided with an upper member and a side member coupled to the upper member; an accommodating portion arranged toward one side of the side member; a stage arranged in the accommodating portion and formed to mount the substrate; a first injection portion arranged in the side member and injecting at least one gas to a space between the side member and the upper member; a second injection portion arranged in the upper member and injecting at least one gas in a space between the upper member and the side member; and a plasma generating portion provided with a coil portion arranged on one surface of the upper member and a power portion connected to the coil portion.

Description

[0001] The present invention relates to a vapor deposition apparatus and an organic light emitting display apparatus,

The present invention relates to a vapor deposition apparatus and a method of manufacturing an organic light emitting display, and more particularly, to a vapor deposition apparatus and a method of manufacturing an organic light emitting display capable of efficiently performing a deposition process and easily improving a vapor deposition characteristic .

Semiconductor devices, display devices, and other electronic devices include a plurality of thin films. There are various methods of forming such a plurality of thin films, one of which is a vapor deposition method.

In the vapor deposition method, at least one gas is used as a raw material for forming a thin film. Such vapor deposition methods include chemical vapor deposition (CVD), atomic layer deposition (ALD), and various other methods.

On the other hand, among the display devices, the organic light emitting display device has a wide viewing angle, excellent contrast, and fast response speed, and is receiving attention as a next generation display device.

The organic light emitting diode display includes an intermediate layer having an organic light emitting layer between a first electrode and a second electrode facing each other, and includes at least one of various thin films. At this time, a deposition process may be used to form a thin film of the organic light emitting display device.

However, as the organic light emitting display device becomes larger and requires a higher resolution, it is difficult to deposit a thin film having a desired area with a desired characteristic. Further, there is a limit in improving the efficiency of the process of forming such a thin film.

The present invention can provide a vapor deposition apparatus and a method for manufacturing an organic light emitting display device that can efficiently perform a deposition process and easily improve a deposition film characteristic.

The present invention relates to a vapor deposition apparatus for depositing a thin film on a substrate and includes a body portion having an upper member and a side member engaged with the upper member, a receiving portion disposed toward one side of the side member, A first injection unit disposed in the side member and configured to inject one or more gases into a space between the side member and the upper member, And a plasma generating part including a second injecting part injecting at least one gas into a space between the side members, a coil part arranged on one surface of the upper member, and a power part connected to the coil part.

In the present invention, the first injection portion may be disposed on one side of the side member and on the other side facing the side member.

The present invention may further include a slit portion disposed between the side member and the accommodating portion and connected to a DC power source.

In the present invention, the accommodating portion may include an exhaust portion, and the exhaust portion may be located below the stage.

The apparatus may further include an exhaust port disposed in the side member and spaced apart from the first injection unit.

In the present invention, the first injection portion may have one end formed to face a space between the side member and the upper member, and the exhaust port may be disposed closer to the upper member than one end of the first injection portion.

The cover part may further include a cover part formed in a direction of the surface of the coil part facing the substrate so as to cover the coil part.

In the present invention, the cover portion may be formed of an insulating material.

The present invention may further include an insulating member disposed on the side member.

In the present invention, the first injection portion may have one end formed to face a space between the side member and the upper member, and the insulating member may be formed so as not to overlap with one end of the first injection portion.

In the present invention, a mask having an opening for depositing a desired pattern on the substrate may be further included.

In the present invention, the upper member and the side member may be formed to be able to be coupled and separated from each other.

According to another aspect of the present invention, there is provided a vapor deposition apparatus having a plurality of modules, a receiving section, and a stage for depositing a thin film on a substrate, wherein each of the plurality of modules includes a top member and a side member A first injection unit which is disposed in the side member and injects at least one gas into a space between the side member and the upper member, a second injection unit which is disposed in the upper member, And a power generating unit connected to the coil unit, wherein the receiving unit is configured to correspond to the plurality of modules as a whole And the stage is disposed in the accommodating portion and is formed to mount the substrate. It discloses a vapor deposition apparatus as.

The apparatus may further include a driving unit that moves the substrate in the accommodating unit in a state where the substrate is mounted on the stage.

In the present invention, the plurality of modules may be arranged in parallel in one direction, and the driving unit may move the substrate in a direction parallel to the one direction.

In the present invention, the driving unit may reciprocate the substrate.

In the present invention, the accommodating portion may include an exhaust portion, and the exhaust portion may be located below the stage.

In the present invention, each of the plurality of modules may further include a slit part disposed between the side member and the accommodating part and connected to a DC power source.

In the present invention, the first injection portion of each of the plurality of modules may be disposed on one side of the side member and on the other side facing the side member.

In the present invention, each of the plurality of modules may further include an exhaust port disposed in the side member and spaced apart from the first injection unit.

In the present invention, the first injection portion may have one end formed to face a space between the side member and the upper member, and the exhaust port may be disposed closer to the upper member than one end of the first injection portion.

In the present invention, each of the plurality of modules may further include a cover portion formed in a direction of the surface of the coil portion facing the substrate so as to cover the coil portion.

In the present invention, the cover portion may be formed of an insulating material.

In the present invention, each of the plurality of modules may further include an insulating member disposed on the side member.

In the present invention, the first injection portion may have one end formed to face a space between the side member and the upper member, and the insulating member may be formed so as not to overlap with one end of the first injection portion.

In the present invention, a mask having an opening for depositing a desired pattern on the substrate may be further included.

In the present invention, each of the plurality of modules can be coupled to and separated from each other, and the upper member and the side member of each of the plurality of modules can be formed to be able to be coupled and separated from each other.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film transistor including a first electrode, an intermediate layer having an organic light emitting layer, and a second electrode formed on a substrate using a vapor deposition apparatus having a plurality of modules, Wherein each of the plurality of modules includes a body portion having an upper member and a side member that engages with the upper member, a body portion disposed on the side member, A first injection unit for injecting at least one gas into a space between the upper members, a second injection unit arranged at the upper member for injecting at least one gas into a space between the upper member and the side member, And a power generating unit connected to the coil unit, wherein the plasma generating unit includes: Wherein the stage is formed to correspond to the plurality of modules and the stage is disposed in the accommodating portion to mount the substrate, the step of forming the thin film includes: mounting the substrate on the stage; And injecting a gas toward the substrate through the first injection portion and the second injection portion of each of the plurality of modules while moving the substrate while the substrate is mounted on the stage .

In the present invention, the step of forming the thin film may include forming an encapsulation layer disposed on the second electrode.

In the present invention, the step of forming the thin film may be to form an insulating film.

In the present invention, the step of forming the thin film may be to form a conductive film.

The vapor deposition apparatus and the method for manufacturing an organic light emitting display according to the present invention can efficiently carry out the vapor deposition process and easily improve the vapor deposition characteristics.

1 is a cross-sectional view schematically showing a vapor deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a vapor deposition apparatus according to another embodiment of the present invention.
FIG. 3 is a cross-sectional view schematically showing an organic light emitting diode display manufactured by a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing a vapor deposition apparatus according to an embodiment of the present invention.

1, the vapor deposition apparatus 100 includes a main body 130, a receiving portion 120, a stage 105, a first injecting portion 141, a second injecting portion 142, and a plasma generating portion 190 ). The body portion 130 includes a side member 131 and an upper member 132. The plasma generating section 190 includes a coil section 191 and a power source section 192.

The upper member 132 and the side member 131 are arranged to define a predetermined space. The side member 131 is of the same shape as a hollow column, for example, the side member 131 has the same shape as a hollow cylinder. And the upper member 132 is disposed on the upper side of the side member 131. [ A predetermined space is provided between the upper member 132 and the side member 131. [ That is, the upper member 132 covers the inner space of the side member 131.

The side member 131 and the upper member 132 are formed so as to be able to be coupled and separated. As a specific example, a flange and a ring may be used when the side member 131 and the upper member 132 are coupled.

The upper member 132 and the side member 131 are separated from each other so that the entire vapor deposition apparatus 100 including the upper member 132 and the side member 131 can be checked and cleaned easily.

The first injection portion 141 is disposed on the side member 131. One end of the first injection part 141 is connected to the outside of the side member 131 to receive the gas and the other end of the first injection part 141 is connected to the space between the side member 131 and the upper member 132 And the gas is injected into the space between the side member 131 and the upper member 132 through the first injection unit 141. In this case, it is preferable that the first injection unit 141 is disposed on one side of the side member 131 and on the other side opposite to the side member 131 to inject gas from both sides of the side member 131.

At this time, the first injecting parts 141 disposed on one side and the other side of the side member 131 may inject the same gas or inject different gases into each other.

The second injection portion 142 is disposed in the upper member 132. The second injection part 142 is preferably disposed at the center of the upper member 132, but may be formed at a desired position in the entire area of the upper member 132 as required. The gas is injected into the lower part of the upper member 132 through the second injection part 142 and the gas is injected between the upper part 132 and the side part 131 as a result.

The plasma generating section 190 includes a coil section 191 and a power supply section 192. Specifically, the coil section 191 is disposed below the upper member 132 and connected to the power source section 192. The power supply unit 192 applies high frequency (RF) power to the coil part 191, and the coil part 191 converts the gas to a plasma state as a kind of induction coil. Specifically, the gas supplied through the second injection portion 142 can be excited into a plasma state. In addition, plasma may be generated using the gas supplied through the second injection unit 142, and the gas supplied through the first injection unit 141 through the plasma may be excited into a plasma state. Further, the coil portion 191 may directly excite the gas supplied through the first injection portion 141 into a plasma state.

A cover portion 160 is disposed on the coil portion 191. The cover portion 160 is formed of an insulating material. The cover portion 160 prevents the coil portion 191 from being damaged by plasma or the like. Of course, the cover portion 160 is formed so as not to overlap with the second injection portion 142. That is, the second injection portion 142 is formed to penetrate the cover portion 160.

An insulating member 170 is formed so as to correspond to the inner surface of the side member 131. The insulating member 170 protects the inner surface of the side member 131 and facilitates efficient generation and maintenance of the plasma. The insulating member 170 is formed so as not to overlap with the first injection portion 141. Specifically, the insulating member 170 is disposed so as not to overlap with one end of the first injection portion 141 which faces the space between the side member 131 and the upper member 132. The insulating member 170 is preferably formed using quartz, but is not limited thereto.

An exhaust port 180 is formed in the side member 131. The exhaust port 180 is connected to a pump (not shown) to exhaust unnecessary gas generated during the vapor deposition process remaining in the space between the side member 131 and the upper member 132. The exhaust port 180 is disposed at the upper end of the side member 131. The first injection unit 141 has one end formed so as to face the space between the side member 131 and the upper member 132. The first injection unit 141 is provided on the upper member 132 rather than one end of the first injection unit 141, The exhaust port 180 is disposed so as to be close to the exhaust port.

The accommodation part 120 is arranged to face the main body part 130. Specifically, the accommodating portion 120 is disposed on one side of the side member 131. The accommodating portion 120 has an exhaust portion 121 at a lower portion thereof. The exhaust part 121 is an outlet for exhausting the gas, and is preferably connected to the pump to facilitate the exhaust.

The stage 105 is disposed in the accommodating portion 120, and particularly disposed above the exhaust portion 121. A substrate 101 is disposed on the stage 105. [ Specifically, the substrate 101 is mounted on the upper surface of the stage 105.

Fixing means (not shown) may be arranged to mount and fix the substrate 101 on the stage 105. [ The fastening means (not shown) may be of various types, such as clamps, pressure means, adhesive materials and the like.

A mask 110 is disposed on the substrate 101. The mask 110 has an opening (not shown) formed in a predetermined shape, and the opening has a shape corresponding to a pattern of the thin film to be formed on the substrate 101. [

The slit portion 151 is disposed between the body portion 130 and the receiving portion 120, specifically between the side member 131 and the receiving portion 120. The slit portion 151 is connected to the DC power supply 150. The slit portion 151 improves the plasma characteristics generated in the space between the side member 131 and the upper member 132 through the coil portion 191. [ In other words, the plasma has uniform characteristics so as to face the substrate 101, improve the characteristics of the thin film formed on the substrate 101, and improve the efficiency of the thin film forming process.

The operation of the vapor deposition apparatus 100 of this embodiment will be briefly described.

And the substrate 101 is mounted on the stage 105. Then, a mask 110 having an opening (not shown) of a desired pattern is disposed on the substrate 101.

Then, the source gas is injected through the first injection portion 141. At this time, the source gas is injected into the space between the side member 131 and the upper member 132. Further, the source gas is directed to the substrate 101 disposed in the accommodating portion 120 through the slit portion 151.

As a specific example, the source gas may be a gas containing aluminum (Al) atoms.

The source gas is adsorbed on the upper surface of the substrate 101. Then, a single layer of the source gas or a plurality of atomic layers of the source gas are formed on the upper surface of the substrate 101 after the evacuation process through the evacuation unit 121. That is, a single layer or multiple layers of aluminum (Al) atoms are formed. At this time, the exhaust process can be formed using a purge gas. The purge gas may be injected through the second injection portion 142. Further, the source gas and the purge gas remaining after the process can be easily removed by using the exhaust port 180 formed in the side member 131. It is possible to easily exhaust the residual gas near the upper member 132 by positioning the exhaust port 180 at the upper end of the side member 131. [

Then, the reactive gas is injected through the second injection portion 142. The reactive gas injected through the second injecting part 142 is excited by the plasma by the plasma generating part 190. The reactive gas component in the state of being excited by the plasma passes through the space between the side member 131 and the upper member 132, passes through the slit part 151, and moves toward the substrate 101. As a specific example, the reactive gas may be a gas containing an oxygen (O) atom.

The reaction gas in a state of being excited by the plasma is adsorbed on the upper surface of the substrate 101. Then, after the exhaust process is performed through the exhaust part 121, an atomic layer or a plurality of atomic layers of a single layer of the reactive gas is formed on the upper surface of the substrate 101. That is, a single layer or plural layers of oxygen atoms are formed. At this time, the exhaust process can be performed using a purge gas. The purge gas may be injected through the second injection portion 142. Further, the source gas and the purge gas remaining after the process can be easily removed by using the exhaust port 180 formed in the side member 131.

Through this, a single-layered atomic layer or a plurality of atomic layers composed of the components of the source gas and the reactive gas are formed on the upper surface of the substrate 101. That is, an aluminum oxide film (AlxOy, x and y can be controlled according to process conditions) is formed. Although the process of forming an aluminum oxide film is described in this embodiment, this is for convenience of description, and the present invention is not limited thereto. That is, it goes without saying that the present invention can be applied to a process of forming various insulating films including an oxide film and a conductive film.

Another specific example of the operation of the vapor deposition apparatus 100 of this embodiment is as follows.

 The source gas and the reactive gas may be injected through the first injection unit 141. [ A separate plasma gas for plasma generation may be injected into the second injection part 142. That is, when the source gas is first injected through the first injecting unit 141, another plasma gas is injected into the second injecting unit 142 at the same time or before the source gas is injected to generate a plasma using the plasma generating unit 190 . This plasma moves in the direction of the substrate 101 and excites the source gas. Then, when the reactive gas is injected through the first injecting part 141, the plasma generated in the plasma generating part 190 excites the reactive gas. At this time, the source gas and the reactive gas are injected through the different first injection parts 141 so as to prevent mixing of the source gas and the reactive gas. That is, the source gas is injected through the first injecting part 141 disposed at one side of the side member 131, and the reactive gas is injected through the first injecting part 141 disposed at the opposite side.

Another specific example of the operation of the vapor deposition apparatus 100 of this embodiment is as follows.

A thin film such as a silicon oxide film (SiO 2) can be formed by a chemical vapor deposition method using the vapor deposition apparatus 100. At this time, the first injection portion 141 injects silane gas and the second injection portion 142 supplies oxygen. And an inert gas such as argon is injected through the second injection portion 142. [ Of course, it is of course possible to inject oxygen by using the first injection part 141 which does not inject the silane gas from the first injection part 141 without using the second injection part 142 when injecting oxygen.

However, this process is only one specific example of the vapor deposition apparatus 100 of the present embodiment, but the present invention is not limited thereto. The vapor deposition apparatus 100 of this embodiment can perform a vapor deposition process in various ways.

The vapor deposition apparatus 100 of the present embodiment includes a main body 130 having an upper member 132 and a side member 131 to inject gas through the side member 131 and the upper member 132. That is, gas is injected into a space defined between the upper member 132 and the side member 131, and at the same time, plasma is generated in the space, thereby efficiently using the space of the vapor deposition apparatus 100, A vapor deposition process for forming a thin film may be performed.

Particularly, the upper member 132 and the side member 131 are not integrally formed and can be separated, so that contamination and damage of the vapor deposition apparatus 100 can be easily checked through repetitive vapor deposition processes, Do.

The accommodating portion 120 in which the substrate 101 is disposed is disposed separately from the body portion 130 to prevent the substrate 101 from being contaminated by undesired impurities. Particularly, the exhaust part 121 is formed in the lower part of the accommodating part 120 to facilitate the exhaust process.

Further, an exhaust port 180 is formed in the side member 131 to easily remove remaining impurity gas without being exhausted through the exhaust part 121. [ Thereby improving the characteristics of the thin film formed on the substrate 101.

A slit part 151 connected to the DC power source 150 is disposed between the body part 130 and the accommodation part 120 so that the plasma generated by the plasma generating part 190 can be efficiently maintained, So that the physical properties of the plasma are uniform and the physical properties such as uniformity and compactness of the thin film formed on the substrate 101 are improved.

2 is a cross-sectional view schematically showing a vapor deposition apparatus according to another embodiment of the present invention.

2, the vapor deposition apparatus 500 includes a plurality of modules A, B, and C, a receiving unit 520, a stage 505, a mask 510, and a driving unit 515. Each of the plurality of modules A, B and C includes a main body 130, 230 and 330, first injection parts 141 and 241 and 341, second injection parts 142, 242 and 342, 190, 290, 390, slit portions 151, 251, 351, and exhaust ports 190, 290, 380.

The module (A) will be described in detail.

The module A includes a body part 130, a first injection part 141, a second injection part 142, and a plasma generation part 190. The body portion 130 includes a side member 131 and an upper member 132. The plasma generating section 190 includes a coil section 191 and a power source section 192.

A cover portion 160 is disposed on the coil portion 191. An insulating member 170 is formed so as to correspond to the inner surface of the side member 131. An exhaust port 180 is formed in the side member 131. The exhaust port 180 is connected to a pump (not shown).

The slit portion 151 is disposed between the body portion 130 and the receiving portion 120, specifically between the side member 131 and the receiving portion 120.

The respective members of the module A are as described in the above embodiment. That is, the members of FIG. 1 having the same reference numerals as those of the respective members of the module A are the same members as the members of FIG. 2, and a detailed description thereof will be omitted.

Since the module B and the module C are the same as the module A, a detailed description of the configuration is omitted.

The module (A), the module (B) and the module (C) are arranged side by side in one direction. That is, in the X-axis direction in Fig. Although three modules are shown in FIG. 2, the present invention is not limited thereto, and the number of modules can be determined as desired.

The receiving portion 520 is formed to correspond to the entire modules A, B, and C. That is, the accommodating portion 520 is disposed at one side of the side members 131, 231, and 31 to correspond to the side members 131, 231, and 331 of the modules A, B, The accommodating portion 520 has an exhaust portion 521 at a lower portion thereof. The exhaust part 521 is an outlet for exhausting the gas, and is preferably connected to the pump to facilitate the exhaust.

The stage 505 is disposed in the accommodating portion 520. A substrate 501 is disposed on the stage 505. Specifically, the substrate 501 is mounted on the upper surface of the stage 505.

Fixing means (not shown) may be arranged to mount and fix the substrate 501 on the stage 505. The fastening means (not shown) may be of various types, such as clamps, pressure means, adhesive materials and the like.

A mask 510 is disposed on the substrate 501. The mask 510 has an opening (not shown) formed in a predetermined shape, and the opening has a shape corresponding to the pattern of the thin film to be formed on the substrate 501.

The driving unit 515 moves the substrate 501 in one direction in a state where the substrate 501 is mounted on the stage 505. [ That is, the driving unit 570 moves the substrate 501 in the arrow direction M parallel to the X-axis direction in FIG. At this time, the driving unit 570 can reciprocate the substrate 501 in the X-axis direction.

The vapor deposition apparatus 100 of the present embodiment can sequentially form a thin film through a vapor deposition process in a plurality of modules A, B, and C while moving the substrate 501 using the driving unit 515. Thus, a thin film having a desired thickness can be easily formed on the substrate 501.

Particularly, the driving unit 515 can reciprocate in the X-axis direction, and the process can be easily performed in the order of the modules A, B, and C or in the reverse order. The module A, the module B, the module C, the module B, the module A, the module B, and the module C in this order. At this time, a gas is injected so as to face the space between the upper member and the side member of each module, and a desired vapor deposition process can be easily performed regardless of the moving direction of the substrate 101.

FIG. 3 is a cross-sectional view schematically showing an organic light emitting diode display manufactured by a method of manufacturing an organic light emitting display according to an embodiment of the present invention. Specifically, FIG. 3 illustrates an organic light emitting display manufactured using the vapor deposition apparatuses 100 and 500 of the present invention.

Referring to FIG. 3, an organic light emitting display apparatus 10 is formed on a substrate 30. The substrate 30 may be formed of a glass material, a plastic material, or a metal material. A buffer layer 31 containing an insulating material is formed on the substrate 30 to provide a flat surface on the substrate 30 and to prevent moisture and foreign matter from penetrating into the substrate 30.

A thin film transistor (TFT) 40, a capacitor 50, and an organic light emitting device 60 are formed on the buffer layer 31. The thin film transistor 40 mainly includes an active layer 41, a gate electrode 42, and a source / drain electrode 43. The organic light emitting device 60 includes a first electrode 61, a second electrode 62, and an intermediate layer 63.

Specifically, an active layer 41 formed in a predetermined pattern is disposed on the upper surface of the buffer layer 31. The active layer 41 may contain a semiconductor material doped with a p-type or n-type dopant. A gate insulating film 32 is formed on the active layer 41. A gate electrode 42 is formed on the gate insulating film 32 to correspond to the active layer 41. An interlayer insulating film 33 is formed so as to cover the gate electrode 42 and a source / drain electrode 43 is formed on the interlayer insulating film 33 so as to be in contact with a predetermined region of the active layer 41. A passivation layer 34 may be formed to cover the source / drain electrode 43 and a separate insulating layer may be formed on the passivation layer 34 for planarization of the thin film transistor 40. [

A first electrode (61) is formed on the passivation layer (34). The first electrode 61 is formed to be electrically connected to the drain electrode 43. The pixel defining layer 35 is formed so as to cover the first electrode 61. A predetermined opening 64 is formed in the pixel defining layer 35 and an intermediate layer 63 having an organic light emitting layer is formed in a region defined by the opening 64. [ And the second electrode 62 is formed on the intermediate layer 63.

An encapsulation layer 70 is formed on the second electrode 62. The sealing layer 70 may contain an organic material or an inorganic material, and may be a structure in which organic materials and inorganic materials are alternately laminated.

The sealing layer 70 can be formed using the vapor deposition apparatuses 100 and 200 of the present invention. That is, the substrate 30 on which the second electrode 62 is formed may be mounted on the stages 105 and 505 of the vapor deposition apparatuses 100 and 500, and the vapor deposition process may be performed to form the sealing layer 70.

However, the present invention is not limited thereto. That is, other insulating films such as the buffer layer 31, the gate insulating film 32, the interlayer insulating film 33, the passivation layer 34, and the pixel defining film 35 of the organic light emitting display device 10 are formed by the vapor deposition apparatus of the present invention You may.

A variety of other thin films such as the active layer 41, the gate electrode 42, the source electrode and the drain electrode 43, the first electrode 61, the intermediate layer 63 and the second electrode 62 may be used in the vapor deposition apparatus Of course, be formed.

In this case, when the vapor deposition apparatus 500 of FIG. 2 is used, an insulating film having a desired thickness or other conductive film, particularly, an insulating film which needs to be formed thicker than the electrodes, such as the sealing layer 70, can be formed quickly.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100, 500: vapor deposition apparatus
101, 501: substrate
110, 510: mask
120, 520:
121, 521:
105, 505: stage
130, 230, 330:
131, 231, 331: side member
132, 232, 332: upper member
141, 241, 341:
142, 242, 342:
190, 290, 390:
191, 291, 391: coil part
192, 292, 392:
151, 251, 351:
180, 280, 380: exhaust port

Claims (29)

The present invention relates to a vapor deposition apparatus for depositing a thin film on a substrate,
A main body having a top member and a side member that engages with the top member;
A receiving portion disposed to face the main body portion so as to overlap at least one region of the main body portion;
A stage disposed in the receiving portion and configured to mount the substrate;
A first injection unit disposed in the side member for injecting one or more gases into a space between the side member and the upper member;
A second injection unit disposed in the upper member for injecting one or more gases into a space between the upper member and the side member;
And a plasma generator having a coil part disposed on one surface of the upper member and a power part connected to the coil part,
Wherein the first injection unit and the second injection unit are controlled to selectively perform the atomic layer deposition method and the chemical deposition method to deposit the thin film. The method according to claim 1,
Wherein the first injection portion is disposed on one side of the side member and on the other side facing the side member. The method according to claim 1,
Wherein the accommodating portion includes an exhaust portion,
And the exhaust part is positioned below the stage. The method according to claim 1,
And an exhaust port disposed in the side member and spaced apart from the first injection portion. 5. The method of claim 4,
Wherein the first injection portion has one end formed to face a space between the side member and the upper member,
Wherein the exhaust port is disposed closer to the upper member than one end of the first injection unit. The method according to claim 1,
And a cover portion formed in a direction of the surface of the coil portion facing the substrate so as to cover the coil portion. The method according to claim 6,
Wherein the cover portion is formed of an insulating material. The method according to claim 1,
And an insulating member disposed on the side member. 9. The method of claim 8,
Wherein the first injection portion has one end formed to face a space between the side member and the upper member,
Wherein the insulating member is not overlapped with one end of the first injection portion. The method according to claim 1,
And a mask having an opening for depositing a desired pattern on the substrate. The method according to claim 1,
Wherein the upper member and the side member are formed to be able to be coupled and separated from each other. A vapor deposition apparatus having a plurality of modules, a receiving section, and a stage for depositing a thin film on a substrate,
A main body having a top member and a side member that engages with the top member;
A first injection unit disposed in the side member for injecting one or more gases into a space between the side member and the upper member;
A second injection unit disposed in the upper member for injecting one or more gases into a space between the upper member and the side member; And
And a plasma generator having a coil part disposed on one surface of the upper member and a power part connected to the coil part,
Wherein the accommodating portion is formed to correspond to the entire plurality of modules, the stage is disposed in the accommodating portion and is configured to mount the substrate,
Wherein the first injection unit and the second injection unit are controlled to selectively perform the atomic layer deposition method and the chemical deposition method to deposit the thin film. 13. The method of claim 12,
And a driving section for moving the substrate in the accommodating section while the substrate is mounted on the stage. 14. The method of claim 13,
Wherein the plurality of modules are arranged side by side in one direction,
Wherein the driving unit moves the substrate in a direction parallel to the one direction. 15. The method of claim 14,
Wherein the driving unit reciprocates the substrate. 13. The method of claim 12,
Wherein the accommodating portion includes an exhaust portion,
And the exhaust part is positioned below the stage. 13. The method of claim 12,
Wherein the first injection portion of each of the plurality of modules is disposed on one side of the side member and the other side facing the side member. 13. The method of claim 12,
Each of said plurality of modules further comprising an exhaust port disposed in said side member and spaced apart from said first injection portion. 19. The method of claim 18,
Wherein the first injection portion has one end formed to face a space between the side member and the upper member,
Wherein the exhaust port is disposed closer to the upper member than one end of the first injection unit. 13. The method of claim 12,
Wherein each of the plurality of modules further includes a cover portion formed in a direction of the surface of the coil portion facing the substrate so as to cover the coil portion. 21. The method of claim 20,
Wherein the cover portion is formed of an insulating material. 13. The method of claim 12,
Wherein each of the plurality of modules further comprises an insulating member disposed in the side member. 23. The method of claim 22,
Wherein the first injection portion has one end formed to face a space between the side member and the upper member,
Wherein the insulating member is not overlapped with one end of the first injection portion. 13. The method of claim 12,
And a mask having an opening for depositing a desired pattern on the substrate. 13. The method of claim 12,
Each of the plurality of modules being connectable and detachable to each other,
Wherein the upper member and the side member of each of the plurality of modules are configured to be able to be coupled and separated from each other. A method of manufacturing an organic light emitting display device including a thin film including at least a first electrode, an intermediate layer having an organic light emitting layer, and a second electrode on a substrate using a vapor deposition apparatus having a plurality of modules, a receiver and a stage , ≪ / RTI &
Wherein each of the plurality of modules comprises:
A main body having a top member and a side member that engages with the top member;
A first injection unit disposed in the side member for injecting one or more gases into a space between the side member and the upper member;
A second injection unit disposed in the upper member for injecting one or more gases into a space between the upper member and the side member; And
And a plasma generator having a coil part disposed on one surface of the upper member and a power part connected to the coil part,
Wherein the accommodating portion is formed to correspond to the entire plurality of modules, and the stage is disposed in the accommodating portion to mount the substrate,
The step of forming the thin film may include: mounting the substrate on the stage; And
And injecting a gas toward the substrate through the first injection portion and the second injection portion of each of the plurality of modules while moving the substrate while the substrate is mounted on the stage,
And selectively depositing the thin film by selectively performing the atomic layer deposition method and the chemical deposition method by controlling the first injection portion and the second injection portion. 27. The method of claim 26,
Wherein the step of forming the thin film forms an encapsulation layer disposed on the second electrode. 27. The method of claim 26,
Wherein the forming of the thin film comprises forming an insulating film. 27. The method of claim 26,
Wherein the forming of the thin film forms a conductive film.

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