KR20180085024A - Matrix-type integrated circuit with defect isolation - Google Patents

Matrix-type integrated circuit with defect isolation Download PDF

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Publication number
KR20180085024A
KR20180085024A KR1020187018616A KR20187018616A KR20180085024A KR 20180085024 A KR20180085024 A KR 20180085024A KR 1020187018616 A KR1020187018616 A KR 1020187018616A KR 20187018616 A KR20187018616 A KR 20187018616A KR 20180085024 A KR20180085024 A KR 20180085024A
Authority
KR
South Korea
Prior art keywords
matrix
integrated circuit
type integrated
defect isolation
defect
Prior art date
Application number
KR1020187018616A
Other languages
Korean (ko)
Other versions
KR101933365B1 (en
Inventor
피에터 루스
Original Assignee
바렉스 이미징 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바렉스 이미징 코포레이션 filed Critical 바렉스 이미징 코포레이션
Publication of KR20180085024A publication Critical patent/KR20180085024A/en
Application granted granted Critical
Publication of KR101933365B1 publication Critical patent/KR101933365B1/en

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Classifications

    • H04N5/367—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/74—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H04N5/376—
KR1020187018616A 2016-01-27 2017-01-27 Matrix-type integrated circuit with defect isolation KR101933365B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/007,312 2016-01-27
US15/007,312 US9947712B2 (en) 2016-01-27 2016-01-27 Matrix type integrated circuit with fault isolation capability
PCT/US2017/015502 WO2017132616A1 (en) 2016-01-27 2017-01-27 Matrix type integrated circuit with fault isolation capability

Publications (2)

Publication Number Publication Date
KR20180085024A true KR20180085024A (en) 2018-07-25
KR101933365B1 KR101933365B1 (en) 2018-12-27

Family

ID=58016846

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187018616A KR101933365B1 (en) 2016-01-27 2017-01-27 Matrix-type integrated circuit with defect isolation

Country Status (6)

Country Link
US (1) US9947712B2 (en)
EP (1) EP3409010B1 (en)
JP (1) JP6542482B2 (en)
KR (1) KR101933365B1 (en)
CN (1) CN108496362B (en)
WO (1) WO2017132616A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9233765B2 (en) * 2011-06-16 2016-01-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multi-dimensional damage detection
EP3382344B1 (en) * 2017-03-30 2021-12-15 Melexis Technologies SA Fault detection
EP3907983B1 (en) * 2020-05-07 2023-06-28 Teledyne Dalsa B.V. Fault detection circuit for image sensor
CN113907808B (en) * 2021-12-14 2022-03-01 极限人工智能有限公司 Split type surgical device and control method thereof

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DE3526485A1 (en) * 1985-07-24 1987-02-05 Heinz Krug CIRCUIT ARRANGEMENT FOR TESTING INTEGRATED CIRCUIT UNITS
US4956602A (en) * 1989-02-14 1990-09-11 Amber Engineering, Inc. Wafer scale testing of redundant integrated circuit dies
US5648661A (en) * 1992-07-02 1997-07-15 Lsi Logic Corporation Integrated circuit wafer comprising unsingulated dies, and decoder arrangement for individually testing the dies
JPH06230086A (en) * 1992-09-22 1994-08-19 Nec Corp Lsi testing circuit
US6115305A (en) * 1999-06-15 2000-09-05 Atmel Corporation Method and apparatus for testing a video display chip
US6734897B1 (en) * 1999-08-10 2004-05-11 Agilent Technologies, Inc Digital imaging circuit and method
US6407770B1 (en) * 1999-08-19 2002-06-18 General Electric Company Apparatus and method for detecting defects in a discrete picture element detector circuit
JP2001155905A (en) * 1999-11-24 2001-06-08 Nec Corp Semiconductor device, trimming method and storage medium
US6876572B2 (en) * 2003-05-21 2005-04-05 Altera Corporation Programmable logic devices with stabilized configuration cells for reduced soft error rates
JP2006049611A (en) * 2004-08-05 2006-02-16 Iwate Toshiba Electronics Co Ltd Cmos image sensor
US7608837B2 (en) * 2006-11-24 2009-10-27 Tower Semiconductor Ltd. High resolution integrated X-ray CMOS image sensor
GB0724983D0 (en) * 2007-12-21 2008-01-30 Cmosis Nv Pixel array with reduced sensitivity to defects
JP4905420B2 (en) * 2008-07-29 2012-03-28 ソニー株式会社 Display device, display device driving method and manufacturing method, and electronic apparatus
CN102753984B (en) * 2010-01-21 2015-05-20 飞思卡尔半导体公司 Chip damage detection device for a semiconductor integrated circuit
FR2971085A1 (en) * 2011-01-31 2012-08-03 Commissariat Energie Atomique RELIABLE ELECTRONIC COMPONENT MATRIX AND DEFECT LOCATION METHOD IN THE MATRIX
CN102445650B (en) * 2011-09-22 2014-09-24 重庆大学 Blind signal separation algorithm-based circuit fault diagnosis method
JP6188433B2 (en) * 2013-06-07 2017-08-30 浜松ホトニクス株式会社 Solid-state imaging device
EP3044951A4 (en) * 2013-09-11 2017-09-06 Varex Imaging Corporation Pixel circuit with constant voltage biased photodiode and related imaging method
FR3016079B1 (en) * 2013-12-30 2015-12-25 Trixell ELECTRONIC DEVICE COMPRISING A MATRIX OF ELEMENTARY ELECTRONIC CIRCUITS
JP2015185860A (en) * 2014-03-20 2015-10-22 株式会社東芝 Solid state image sensor
US9563222B2 (en) * 2014-05-08 2017-02-07 Varian Medical Systems, Inc. Differential reference signal distribution method and system

Also Published As

Publication number Publication date
EP3409010B1 (en) 2021-07-21
EP3409010A1 (en) 2018-12-05
US20170213867A1 (en) 2017-07-27
CN108496362B (en) 2019-08-02
JP2019511145A (en) 2019-04-18
KR101933365B1 (en) 2018-12-27
WO2017132616A1 (en) 2017-08-03
JP6542482B2 (en) 2019-07-10
US9947712B2 (en) 2018-04-17
CN108496362A (en) 2018-09-04

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