KR20180062251A - Organic light emitting diode and organic light emitting display panel and organic light emitting display apparatus using the same - Google Patents

Abstract

The present invention provides an organic light emitting diode, in which an optical compensation layer for compensating a change of optical properties due to a cathode in which the thickness is reduced is provided on the upper end of the cathode, an organic light emitting display panel and an organic light emitting display device using the same. To this end, the organic light emitting diode according to the present invention comprises: an anode used as a first electrode; a light emitting part deposited on the anode, and outputting light; the cathode deposited on the upper end of the light emitting part, being transparent, and used as a second electrode; and the optical compensation layer deposited on the cathode, and being transparent. The optical compensation layer is an insulator, and the thickness of the optical compensation layer is one to five times the thickness of the cathode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED), an organic light emitting diode (OLED) display panel, and an organic light emitting diode (OLED)

The present invention relates to an organic light emitting diode, an organic light emitting display panel using the same, and an organic light emitting display.

Flat panel displays (FPDs) are used in various types of electronic products including mobile phones, tablet PCs, and notebook computers. 2. Description of the Related Art Flat panel displays include liquid crystal displays (LCDs) and organic light emitting display devices (OLEDs). Electrophoretic display devices (EPDs) are also widely used .

Of the flat panel display devices (hereinafter, simply referred to as 'display devices'), the organic light emitting display device has a high response speed of 1 ms or less and low power consumption, It is attracting attention.

FIG. 1 is a view illustrating a conventional organic light emitting diode, and FIG. 2 is a view illustrating a conventional organic light emitting diode with a foreign substance attached thereto.

1, the conventional organic light emitting diode includes an anode 10, a light emitting portion 20 stacked on the anode 10, a light emitting portion 20 for protecting the light emitting portion 20, And a cathode 40 stacked on top of the passivation layer 30. The passivation layer 30 is formed on the top of the passivation layer 30,

The light emitting unit 20 outputs white light. For this, the light emitting unit 20 may include at least three light emitting layers for outputting light of different colors. In Fig. 1, an organic light emitting diode composed of three light emitting layers 21, 22, and 23 is shown.

The organic light emitting diode outputs light in the direction of the cathode 40.

For this purpose, the cathode may be formed of a transparent electrode, for example, indium zinc oxide (IZO) (hereinafter simply referred to as IZO).

In the conventional organic light emitting diode of the top emission type as described above, the IZO used as the cathode 40 is very thick. Therefore, the defective rate of the organic light emitting diode due to the foreign substance is increasing. Further, when defects due to foreign substances are generated, it is difficult to repair the organic light emitting diode.

For example, in a conventional organic light emitting diode, IZO having a thickness of 1300 ANGSTROM is used as the cathode 40. The larger the thickness of the cathode 40, the larger the size of the foreign substance, the higher the incidence of dark spot caused by the increase in the thickness of the cathode 40, and the lower the success rate of the repair. Therefore, the yield of the organic light emitting display using the organic light emitting diode is lowered.

In other words, when the thickness of the cathode 40 is increased, the size of the foreign substance 90 to which the cathode 40 is attached is also increased as shown in FIG. 2, The size of the dark spot also increases.

In addition, when the thickness of the cathode 40 is increased, the size of the contact surface A between the cathode 40 and the anode 10 is increased at the portion recessed by the foreign substance 90. In this case, since the cathode 40 and the anode 10 are short-circuited, the frequency of the dark point of the entire pixel to which the foreign matter is attached becomes high.

In addition, since the contact surface A of the cathode 40 and the anode 10 is large, repairing of the contact surface A becomes difficult. Accordingly, one entire pixel may be displayed as a dark spot.

To this end, it is necessary to reduce the thickness of the cathode (40). However, if the thickness of the cathode 40 is reduced, the overall optical cavity of the organic light emitting diode may vary. Accordingly, the optical characteristics of the organic light emitting diode may be changed, and thus normal light may not be output.

An object of the present invention, which is proposed to solve the above-mentioned problems, is to provide an organic light emitting diode having an optical compensating layer for compensating for a change in optical characteristics due to a cathode having a reduced thickness, Panel and an organic light emitting display.

According to an aspect of the present invention, there is provided an organic light emitting diode display panel including at least one thin film transistor and at least one organic light emitting diode in each of a plurality of pixels, And a driving unit for driving the driving unit.

According to an aspect of the present invention, there is provided an organic light emitting diode display panel including a substrate, pixel driving units formed on the substrate and including thin film transistors, and a plurality of organic light emitting diodes driven by the pixel driving units. .

According to an aspect of the present invention, there is provided an organic light emitting diode comprising: an anode connected to at least one of the thin film transistors; a light emitting unit disposed on the anode and emitting light; A cathode deposited on top of the light emitting portion, transparent and used as a second electrode, and a transparent optical compensation layer deposited on the cathode. Wherein the optical compensation layer is an insulator and the thickness of the optical compensation layer is one to five times the thickness of the cathode.

According to the present invention, the thickness of the cathode can be reduced as compared with the prior art. Accordingly, the yield of the organic light emitting diode of the top emission type and the yield of the organic light emitting display panel including the organic light emitting diode can be improved.

The optical characteristic of the organic light emitting diode according to the present invention is similar to that of a conventional organic light emitting diode having only a cathode since an optical compensation layer for compensating for a change in optical characteristics by a cathode with reduced thickness is provided at the top of the cathode .

1 is an exemplary view showing a conventional organic light emitting diode.
2 is a view showing an example of a conventional organic light emitting diode to which a foreign matter is adhered.
FIG. 3 is a view illustrating an organic light emitting diode according to an embodiment of the present invention. FIG.
4 is a graph comparing the characteristics of the organic light emitting diode according to the present invention with the characteristics of the conventional organic light emitting diode.
FIG. 5 is an exemplary view showing an organic light emitting diode according to the present invention to which a foreign matter is attached. FIG.
FIG. 6 is another example of an organic light emitting diode according to the present invention to which a foreign matter is adhered. FIG.
7 is a view illustrating an organic light emitting display according to an embodiment of the present invention.
8 is a block diagram of a pixel included in an organic light emitting display panel according to an embodiment of the present invention.
9 is a cross-sectional view schematically showing one pixel of an organic light emitting display panel according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. To fully disclose the scope of the invention to a person skilled in the art, and the invention is only defined by the scope of the claims.

It should be noted that, in the specification of the present invention, the same reference numerals as in the drawings denote the same elements, but they are numbered as much as possible even if they are shown in different drawings.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The term " at least one " should be understood to include all possible combinations from one or more related items. For example, the meaning of 'at least one of the first item, the second item and the third item' means not only the first item, the second item or the third item, but also the second item, the second item and the third item, Means any combination of items that can be presented from more than one.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention can be applied to various kinds of display devices using external compensation. Hereinafter, for convenience of explanation, an organic light emitting display device will be described as an example of the present invention.

3 is a block diagram of an organic light emitting diode according to an embodiment of the present invention.

3, the organic light emitting diode OLED according to the present invention includes an anode 110 used as a first electrode, a light emitting portion 120 deposited on the anode 110 and emitting light, A cathode 140 deposited on top of the light emitting portion 120 and transparent and used as a second electrode and a transparent optical compensation layer 150 deposited on the cathode 140.

The anode 110 injects holes into the light emitting unit 120.

The anode 110 may be formed of a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO).

However, since the organic light emitting diode outputs light toward the cathode 140, the anode 110 is not necessarily formed of a transparent material.

Accordingly, the anode 110 may be made of an opaque metal having conductivity. In this case, the anode 110 may function as a reflector that reflects the light output from the light emitting unit 120 toward the cathode 140.

The light emitting unit 120 outputs white light.

For this purpose, the light emitting unit 120 may include at least three light emitting layers 121, 122, and 123. Each of the light emitting layers 121, 122 and 123 outputs light.

For example, the light emitting unit 120 includes a first light emitting layer 121 adjacent to the anode 110 and emitting blue light, a first light emitting layer 121 disposed on the first light emitting layer 121, And a third emission layer 123 provided in the second emission layer 122 and outputting blue (B) light.

In addition, the light emitting unit 120 may include light emitting layers that emit red (R), green (G), and blue (B) Green (RYG), and blue (B) light emitting layers.

As shown in FIG. 3, each of the light emitting layers 121, 122, and 123 includes a hole injection layer (HIL) for injecting holes, a hole injecting layer (HIL) stacked on the hole injecting layer, A hole transport layer (HTL) for transporting holes, an emission material layer (EML) stacked on the hole transport layer and emitting light, and an electron transport layer (EML) And an electron injection layer (EIL) stacked on the electron transport layer and injecting electrons into the electron transport layer.

In this case, the first light emitting layer 121 may further include a layer that functions as a cathode, and the second light emitting layer 122 may include a layer that functions as an anode and a layer that performs a function of a cathode. And the third light emitting layer 123 may further include a layer that functions as an anode.

A protective layer 130 may be deposited on the upper portion of the light emitting portion 120 to protect the light emitting portion 120.

The cathode is formed by a sputtering process in a plasma environment. Accordingly, if the cathode is directly formed on the light emitting portion 120, the light emitting portion 120 may be damaged by a sputtering process in a plasma environment.

In order to prevent this, the protective layer 130 may be deposited on the upper portion of the light emitting portion 120.

That is, the protective layer 130 functions as a buffer, and may be formed of a transparent organic material or a transparent inorganic material.

The thickness from the anode 110 to the protective layer 130 may be the same as the thickness from the anode to the protective layer in a conventional organic light emitting diode. For example, the thickness of the light emitting unit 120 may be in the range of 3000 Å to 4500 Å.

The cathode 140 may be formed of a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO).

The cathode may be formed by a sputtering process.

The thickness of the cathode may be any one of 300 Å to 500 Å in consideration of optical characteristics. The thickness of the cathode is smaller than the thickness of the cathode applied to conventional organic light emitting diodes.

For example, in the conventional organic light emitting diode as shown in FIG. 1, the thickness of the cathode 40 is about 1300 ANGSTROM.

However, in the organic light emitting diode according to the present invention as shown in FIG. 3, the thickness of the cathode 140 may be 300 ANGSTROM to 500 ANGSTROM. In this case, the thickness of the optical compensation layer 150 may be one to five times the thickness of the cathode 140.

The optical compensation layer 150 is deposited on the cathode 140 and is formed of a transparent material.

The optical compensation layer 150 may be formed of an organic material. For example, the optical compensation layer 150 may be formed of a material for forming various insulating films constituting the organic light emitting display panel.

As the optical compensation layer 150, for example, a hole transport layer (HTL) material having a refractive index of 1.7 or more may be used (Aromatic Amine series).

The optical compensation layer 150 may be formed by a thermal evaporation process.

As described above, the thickness of the optical compensation layer 150 may be one to five times the thickness of the cathode 140. That is, the thickness of the optical compensation layer 150 may be variously changed in consideration of the optical characteristics of the cathode 140.

That is, in order to minimize the loss of the light output from the light emitting unit 120, the refractive index of the optical compensation layer 150 is determined by the refractive index of the light emitting unit 120 and the refractive index of the glass Glass). Since the refractive indexes of the glass and the light emitting unit 120 are less than 1.7, the refractive index of the optical compensation layer 150 may be 1.7 or more.

As described above, the refractive index of the optical compensation layer 150 may be 1.7 or more. For example, the refractive index of the optical compensation layer 150 can be any one of 1.7 to 2.2.

In particular, the refractive index of the optical compensating layer 150 may be any of 1.85 to 2.2, which is similar to the refractive index of the material constituting the cathode 140, for example, IZO.

In other words, the refractive index of the optical compensation layer 150 may have a value between 1.85 and 2.2. The optical compensation layer 150 is located, for example, between the cathode and the Fill (Encapulation hardening material) material. In this case, if the refractive index of the optical compensation layer 150 is similar to the refractive index of 1.85 to 2.2, which is the refractive index of IZO forming the cathode, the optical loss due to total internal reflection can be minimized. The total internal reflection is affected by the refractive index (n1) of the light-emitting medium and the refractive index (n2) of the light-emitting medium, and the ratio of the light exiting the medium is proportional to n2 / n1.

Therefore, the refractive index of the optical compensation layer 150 with respect to the cathode IZO must be high at the interface between the cathode IZO 140 and the optical compensation layer 150, Light is largely incident on the optical compensation layer 150. However, when the refractive index of the optical compensation layer 150 is 2.2 or more, the total internal reflection occurs at the interface between the optical compensation layer 150 and the fill, and the optical efficiency decreases (Fill refractive index: 1.5). Therefore, it is preferable that the refractive index of the optical compensation layer 150 has a value between 1.85 and 2.2.

4 is a graph comparing the characteristics of the organic light emitting diode according to the present invention with the characteristics of the conventional organic light emitting diode.

In the organic light emitting diode according to the present invention, in order to solve the problems described in the related art, the thickness of the cathode 140 is reduced as compared with the prior art. However, as described in the related art, if the thickness of the cathode 140 is reduced, the overall optical cavity of the organic light emitting diode may vary. In order to prevent this, in the present invention, the optical compensating layer 150 formed of a transparent organic material or a transparent inorganic material is deposited on the cathode 140.

By virtue of the optical compensation layer 150, the overall optical characteristics of the organic light emitting diode are similar to those of the prior art, so that normal light can be output.

For example, FIG. 4 is a graph comparing the characteristics of the organic light emitting diode according to the present invention and the characteristics of the conventional organic light emitting diode.

In the characteristic comparison chart, optical characteristics of four embodiments of the organic light emitting diode according to the present invention (Pl1, P2, P3, P4) and optical characteristics of a conventional organic light emitting diode (Ref) are described.

In the conventional organic light emitting diode (Ref), the cathode is formed of IZO, the thickness of the cathode is about 1300 ANGSTROM, and the optical compensation layer 150 applied to the present invention is not provided.

In this case, the efficiency (cd / A) of red (R), green (G) and blue (B) is 4.81. 22.0, and 2.36, respectively. Since the efficiency (cd / A) is related to the luminance, the higher the efficiency (cd / A), the better.

The TP color viewing angle corresponds to the color viewing angle in the organic light emitting display panel to which the organic light emitting diode is applied. The lower the TP color viewing angle, the better.

The driving voltage V is a voltage required to drive the organic light emitting diode, and the lower the voltage is, the better.

The external quantum efficiency (EQE) represents the efficiency inside the organic light emitting diode. The higher the external quantum efficiency (EQE), the better.

The efficiency (cd / A), the TP color viewing angle, the driving voltage V and the external quantum efficiency EQE of the conventional organic light emitting diode, the efficiency (cd / A) of the organic light emitting diode according to the present invention, As a result of comparing the driving voltage V and the external quantum efficiency EQE, the optical characteristics of the organic light emitting diode according to the present invention are not significantly different from those of the conventional organic light emitting diode as shown in FIG. Do not.

For example, in the organic light emitting diode according to the first embodiment (P1) of the present invention, the thickness of the cathode 140 is 300 ANGSTROM and the thickness of the optical compensation layer 150 is 1100 ANGSTROM.

In this case, the efficiencies cd / A of red (R), green (G) and blue (B) are 5.88, 20.1 and 2.40, The efficiency (cd / A) of blue (B) is not significantly different from 4.81, 22.0, and 2.36.

The TP color viewing angle is also not significantly different from the TP color viewing angle of a conventional organic light emitting diode of 0.014 and 0.011.

The driving voltage V is also 11.85, which is not significantly different from the driving voltage V of the conventional organic light emitting diode of 11.78.

External quantum efficiency (EQE) is also not significantly different from the external quantum efficiency (EQE) of a conventional organic light emitting diode as a result of simulation and testing.

The optical characteristics of the organic light emitting diodes according to the remaining three embodiments P2, P3, and P4 are also not significantly different from those of the conventional organic light emitting diode.

Specifically, in all four embodiments (P1, P2, P3, P4), the efficiency of red (R) was measured to be higher than the efficiency of red of a conventional organic light emitting diode.

In the third embodiment P3 and the fourth embodiment P4 in which the thickness of the cathode 140 is 300 ANGSTROM and the thickness of the optical compensation layer 150 is 1300 ANGSTROM and 1100 ANGSTROM, Was measured to be higher than the blue efficiency of the conventional organic light emitting diode.

In the second embodiment P2 in which the thickness of the cathode 140 is 300 angstroms and the thickness of the optical compensation layer 150 is 900 angstroms, the TP color viewing angle (0.009) Which is better than the viewing angle (0.011).

As a result of the simulation and the test, in the third embodiment P3 in which the thickness of the cathode 140 is 300 ANGSTROM and the thickness of the optical compensation layer 150 is 1300 ANGSTROM, the external quantum efficiency (EQE) (EQE) of light emitting diodes.

As described above, the organic light emitting diode according to the present invention has an optical characteristic equal to or higher than that of the conventional organic light emitting diode.

FIG. 5 is a view illustrating an organic light emitting diode according to an embodiment of the present invention. FIG. 5 is a view illustrating an organic light emitting diode in which a cathode and an anode are not in contact with a foreign substance. FIG. 6 is a view illustrating another embodiment of the organic light emitting diode according to the present invention. FIG. 6 is a view illustrating an organic light emitting diode in which a cathode and an anode are in contact with a foreign matter.

5, in the organic light emitting diode according to the present invention, since the thickness of the cathode 140 is small, even if a foreign substance is attached to the organic light emitting diode, the cathode 140 and the anode 110 Is not directly contacted. Therefore, only the area corresponding to the size (several 占 퐉) of the foreign substance 90 appears as a dark spot. Since the size of the foreign substance 90 is very small, it may not be recognized by the naked eye.

That is, the smaller the thickness of the cathode 140, the smaller the size of the dark spot caused by the foreign substance 90.

6, in the organic light emitting diode according to the present invention, since the thickness of the cathode 140 is small, even if the cathode 140 and the anode 110 are brought into contact with each other by the foreign substance 90, , The size of the contact surface (K) where the cathode (140) and the anode (110) are in contact is very small as compared with the conventional one.

When the cathode 140 and the anode 110 are in contact with each other, the cathode 140 and the anode 110 are short-circuited, so that the entire pixel to which the foreign matter 90 is attached can be displayed as a dark point.

However, since the size of the contact surface K of the cathode 140 and the anode 110 is not large, the repair of the contact surface K becomes easy. Thus, one pixel is not displayed as a dark spot, and only a region corresponding to the foreign substance 90 appears as a dark spot. That is, if the size of the contact surface K between the cathode 140 and the anode 110 is small, there is a high possibility that an oxide film is formed on the contact surface K by the repair process, Only the area corresponding to the dark spot appears as a dark spot.

That is, the smaller the thickness of the cathode 140, the smaller the size of the dark spot caused by the foreign substance 90.

As described above, the smaller the thickness of the cathode 140, the smaller the amount and size of the foreign substance 90 generated during the manufacturing process of the organic light emitting diode, and the success rate of the repair process for the foreign substance 90 is also increased .

Accordingly, as the thickness of the cathode 140 is reduced, the yield of the organic light emitting diode and the yield of the organic light emitting display panel including the organic light emitting diode can be improved, like the organic light emitting diode according to the present invention.

FIG. 7 is a diagram illustrating an organic light emitting display according to an embodiment of the present invention. FIG. 8 is a diagram illustrating a pixel included in the organic light emitting display panel according to the present invention. Sectional view schematically showing a cross-section of one pixel of the light-emitting display panel. In the following description, the same or similar contents as those described with reference to Figs. 3 to 5 are omitted or briefly described.

As shown in FIG. 7, the organic light emitting display according to the present invention includes an organic light emitting display panel 100 and a driver. The organic light emitting display panel includes a plurality of pixels 111, and at least one thin film transistor 170 and at least one organic light emitting diode (OLED) are provided in each of the pixels 111. The driving unit drives the organic light emitting display panel 100. The driving unit includes at least one of a gate driver 200, a data driver 300, and a controller 400.

8 and 9, the organic light emitting diode display panel 100 includes a substrate 160 and a pixel driver 170, which is formed on the substrate 160 and includes the thin film transistors 170. [ PDCs and a plurality of organic light emitting diodes OLED driven by the pixel driving units PDCs. A flattening film 180 is provided between the thin film transistor 170 and the anode 110 constituting the organic light emitting diode OLED to perform an insulator function and a flattening function.

Each of the organic light emitting diodes (OLED) is used as a first electrode, as described with reference to FIGS. 3 to 6, and includes an anode 110 connected to the thin film transistor 170, A cathode 140 deposited on top of the light emitting portion 120 and transparent and used as a second electrode and a cathode 140 deposited on the cathode 140, Layer 150 as shown in FIG.

The passivation layer 130 may be formed between the light emitting portion 120 and the cathode 140.

Here, the optical compensation layer 150 may be an insulator, and the thickness of the optical compensation layer 150 may be one to five times the thickness of the cathode 140.

The cathode 140 may have a thickness of 300 ANGSTROM to 500 ANGSTROM.

The light emitting unit 120 outputs white light and the light emitting unit 120 includes at least three light emitting layers 121, 122 and 123, and each of the light emitting layers 121, 122, do.

The refractive index of the optical compensation layer 150 may be 1.85 to 2.2.

Next, a plurality of gate lines GL1 to GLg, a plurality of data lines DL1 to DLd, and pixels 111 are formed in the OLED display panel 100. FIG.

Each of the pixels 111 includes an organic light emitting diode (OLED) according to the present invention for outputting light and a pixel driver (PDC) for driving the organic light emitting diode OLED, as shown in FIG. 8 . In each of the pixels 111, signal lines DL, GL, PLA, PLB, SL, and SPL for supplying a driving signal to the pixel driver PDC are formed.

A data voltage Vdata is supplied to the data line DL, a gate pulse GP is supplied to the gate line GL and a first driving power source EVDD is supplied to the power source line PLA. The second driving power source EVSS is supplied to the driving power supply line PLB and the reference voltage Vref is supplied to the sensing line SL and the sensing transistor Tsw2 Is turned on or turned off.

8, the pixel driving part PDC includes a switching transistor Tsw1 connected to the gate line GL and the data line DL, an organic light emitting diode A driving transistor Tdr for controlling the magnitude of a current output to the organic light emitting diode OLED according to a data voltage Vdata transmitted through the switching transistor Tsw1, .

The sensing transistor Tsw2 is connected to the first node n1 and the sensing line SL between the driving transistor Tdr and the organic light emitting diode OLED and is turned on or off by the sensing pulse SP, And senses the characteristics of the driving transistor during a sensing period.

The second node n2 connected to the gate of the driving transistor Tdr is connected to the switching transistor Tsw1. A storage capacitance Cst is formed between the second node n2 and the first node n1.

The pixel driver PDC may have a variety of structures other than the structure shown in FIG.

Lastly, the driver includes a gate driver 200 for driving the gate lines GL1 to GLg, a data driver 300 for driving the data lines DL1 to DLd, and a gate driver 200 for driving the data lines DL1 to DLd. And a controller 400 for controlling the data driver 300.

The controller 400 controls a gate control signal GCS for controlling the gate driver 200 using a timing signal supplied from an external system, for example, a vertical synchronization signal, a horizontal synchronization signal, And outputs a data control signal DCS for controlling the data driver 300.

The controller 400 rearranges the input image data input from the external system and supplies the rearranged digital image data Data to the data driver 300.

That is, the control unit 400 rearranges the input image data supplied from the external system to transmit the rearranged digital image data Data to the data driver 300, and outputs the timing signal A gate control signal GCS for controlling the gate driver 200 and a data control signal DCS for controlling the data driver 300 are generated using the gate driver 200 and the data To the driver (300).

The data driver 300 converts the image data Data input from the controller 400 into an analog data voltage Vdata and supplies the analog data voltage Vdata to the gate line in units of 1 And supplies the data lines (Vdata) of the horizontal line to the data lines.

The gate driver 200 sequentially supplies a gate pulse GP to the gate lines GL1 to GLg of the panel 100 in response to the gate control signal GCS input from the controller 400 do. Accordingly, the switching transistors formed in the respective pixels of the corresponding horizontal line to which the gate pulse GP is input are turned on, so that an image can be output to each pixel 111.

That is, the gate driver 200 shifts a gate start pulse (GSP) transmitted from the control unit 400 according to a gate shift clock (GSC), sequentially shifts the gate lines And a gate pulse GP having a gate-on voltage is supplied to the gate lines GL1 to GLg. The gate driver 200 supplies a gate-off voltage to the gate lines GL1 to GLn during the remaining period when the gate pulse GP is not supplied.

The gate driver 200 may be formed independently from the panel 100 and may be electrically connected to the panel 100 in various ways, (Gate In Panel: GIP) method.

In the above description, the data driver 300, the gate driver 200 and the controller 400 are independently configured. However, the data driver 300, the gate driver 200, One of which may be integrated with the controller 400. [

Hereinafter, the features of the present invention will be summarized.

In the present invention, the thickness of the cathode 140 is reduced to 300 to 500 ANGSTROM, and the thickness of the transparent optical compensation layer 150 made of an insulator is adjusted to adjust the cavity characteristic of the organic light emitting diode. .

According to the present invention, the thickness of the cathode 140 formed of IZO can be reduced. Accordingly, the defect rate due to the foreign matter can be reduced, and the repairing success rate is increased, so that the yield of the organic light emitting diode and the organic light emitting display panel using the organic light emitting diode can be improved.

In addition, the efficiency of the organic light emitting diode can be controlled by adjusting the thickness of the optical compensation layer 150, and the viewing angle of the organic light emitting display panel using the organic light emitting diode can be adjusted.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: panel 200: gate driver
300: Data driver 400:
OLED: organic light emitting diode 110: anode
120: light emitting portion 130:
140: cathode 150: optical compensation layer

Claims (9)

An anode used as a first electrode;
A light emitting part which is deposited on the anode and outputs light;
A cathode deposited on top of the light emitting portion, transparent, and used as a second electrode; And
A transparent optical compensation layer deposited on the cathode,
Wherein the optical compensation layer is an insulator and the thickness of the optical compensation layer is one to five times the thickness of the cathode. The method according to claim 1,
Wherein the thickness of the cathode is 300 ANGSTROM to 500 ANGSTROM. The method according to claim 1,
The light emitting unit outputs white light,
Wherein the light emitting portion includes at least three light emitting layers,
And each of the light emitting layers outputs light. The method according to claim 1,
Wherein the optical compensation layer has a refractive index of from 1.85 to 2.2. Board;
Pixel drivers provided in the substrate and configured by thin film transistors; And
And a plurality of organic light emitting diodes driven by the pixel drivers,
Each of the organic light emitting diodes includes:
An anode used as a first electrode and connected to at least one of the thin film transistors;
A light emitting part which is deposited on the anode and outputs light;
A cathode deposited on top of the light emitting portion, transparent, and used as a second electrode; And
A transparent optical compensation layer deposited on the cathode,
Wherein the optical compensation layer is an insulator,
Wherein the thickness of the optical compensation layer is one to five times the thickness of the cathode. 6. The method of claim 5,
Wherein the cathode has a thickness of 300 ANGSTROM to 500 ANGSTROM. 6. The method of claim 5,
The light emitting unit outputs white light,
Wherein the light emitting portion includes at least three light emitting layers,
Wherein each of the light emitting layers outputs light. 6. The method of claim 5,
Wherein the optical compensation layer has a refractive index of 1.85 to 2.2. An organic light emitting display panel including a plurality of pixels, each of the pixels including at least one thin film transistor and at least one organic light emitting diode; And
And a driving unit for driving the organic light emitting display panel,
The organic light emitting diode includes:
An anode used as a first electrode and connected to the thin film transistor;
A light emitting part which is deposited on the anode and outputs light;
A cathode deposited on top of the light emitting portion, transparent, and used as a second electrode; And
A transparent optical compensation layer deposited on the cathode,
Wherein the optical compensation layer is an insulator,
Wherein the thickness of the optical compensation layer is one to five times the thickness of the cathode.

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