KR20180048290A - Substrate processing apparatus, monitoring program and method of manufacturing semiconductor device - Google Patents

Abstract

Provided is a substrate processing apparatus, monitoring a state of a device by detecting abnormality of device data so as to detect an abnormal event. According to the present invention, the apparatus comprises: a pipeline heater to heat a gas pipeline; a temperature detection unit installed in the pipeline heater and detecting a temperature of the gas pipeline; a control unit to control the temperature of the gas pipeline while outputting device data, which represents power based on the device data representing the temperature acquired from the temperature detection unit, to the pipeline heater; a storage to store a monitoring table in which an item representing an abnormal event, a device data type set to detect abnormality, statistics calculated from the device data, and a diagnosis rule are defined; and a device state monitoring unit to store the device data in the storage unit while collecting the device data from the control unit, and storing the statics in the storage unit.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus, a monitoring program, and a manufacturing method of a semiconductor device. 2. Description of the Related Art [0002] Substrate Processing Apparatus,

The present invention relates to a substrate processing apparatus, a monitoring program, and a method of manufacturing a semiconductor device.

In the field of semiconductor manufacturing, in order to improve the operation rate or the production efficiency of the apparatus, information of the apparatus is accumulated, and the information of the apparatus is used to analyze the trouble of the apparatus and monitor the status of the apparatus. For example, SPC (Statistical Process Control) or the like is used based on measured value information reported from the monitored object to check whether an abnormality occurs. As to the production management of such a substrate processing apparatus, Patent Document 1 describes a technique for managing data integrity using SPC.

Patent Document 2 discloses a technique for detecting the shape of a raw material gas as a fluid inside a pipe by a temperature change of the pipe. However, if only the measured temperature value (only one monitor data) is monitored, the temperature of the pipe is controlled to be maintained at the set temperature by the pipe heater, so that the actual temperature change in the pipe may not be confirmed.

As described above, with the recent increase in the amount of data due to the miniaturization of devices, more detailed and more precise data management is required than ever.

1. Patent No. 5855841 2. Japanese Patent Laid-Open Publication No. 2015-185824

An object of the present invention is to provide a configuration for detecting an anomaly by detecting an abnormality in device data and monitoring the status of the apparatus.

According to one aspect of the present invention, there is provided a gas heating apparatus comprising: a pipe heater for heating a gas pipe; A temperature detecting unit installed in the piping heater for detecting the temperature of the gas piping; A control unit for controlling the temperature of the gas piping while outputting device data representing power based on the device data indicating the temperature acquired from the temperature detection unit to the piping heater; A device data type set for detecting an abnormality of the item, a statistic amount calculated from device data corresponding to the device data type, a period for collecting device data for calculating a statistical amount, A storage unit that at least stores a monitoring table in which a rule for diagnosing an abnormality of device data is defined; And a device state monitoring section for storing the device data in the storage section while collecting the device data from the control section and for storing the statistic amount calculated from the device data corresponding to the device data type in the storage section, The unit acquires the device data representing the temperature and the device data representing the power from the collected device data, calculates the statistical amount of the device data indicating the acquired temperature and the device data representing the acquired temperature, And the statistical amount of the device data indicating the last calculated temperature stored in the storage unit is compared with each other and the statistic calculated in the period defined in the monitoring table of the device data indicating the power when the variation of the statistical amount meets the reference value And a storage unit Times compared to the statistics for the device data indicating the calculated power, the fluctuation of the comparison statistic is configured to monitor is within a threshold.

According to the above configuration, it is possible to detect the occurrence of an abnormality in the apparatus by grasping an abnormal phenomenon of the apparatus data.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a substrate processing apparatus suitably used in an embodiment of the present invention; Fig.
2 is a functional block diagram of a control system preferably used in an embodiment of the present invention.
3 is a diagram illustrating a functional configuration of a device management controller preferably used in an embodiment of the present invention.
4 is a flow chart showing a substrate processing process preferably used in an embodiment of the present invention.
5A is an enlarged view of a portion indicated by A in Fig.
Fig. 5B is a view for explaining a piping heater preferably used in an embodiment of the present invention. Fig.
5C is a view for explaining a piping heater preferably used in an embodiment of the present invention.
6 is a view showing watched contents preferably used in an embodiment of the present invention.
7 is a diagram showing a functional configuration of a device state monitoring unit preferably used in an embodiment of the present invention.
8 is a view showing a processing flow of a monitoring program executed by a device status monitoring unit preferably used in an embodiment of the present invention.
FIG. 9 is a diagram showing a result of a processing flow of a monitoring program executed in the apparatus state monitoring section preferably used in an embodiment of the present invention. FIG.
10 is a diagram showing a result of execution of an analysis program executed in an anomaly analysis support section preferably used in an embodiment of the present invention.
11 is a view showing a problem caused by a decrease in piping temperature.

(1) Configuration of substrate processing apparatus

Hereinafter, embodiments will be described with reference to the drawings. In the following description, the same constituent elements are denoted by the same reference numerals, and repetitive description thereof may be omitted. In the drawings, the width, thickness, shape, and the like of each portion are schematically shown as an example in order to make the description more clear, but it is an example only. But does not limit the interpretation.

(By processing)

As shown in Fig. 1, a reaction tube 203, which is a processing vessel for processing a wafer 200 as a substrate, is provided inside a heater 207 which is a first heating section. An inlet flange 210 as a nose portion is provided at the lower end of the reaction tube 203. The inlet flange 210 is connected to an O-ring 220 which is a hermetic member by a seal cap 219 as a lid It becomes airtight (closed). The process chamber 201 is formed by at least the reaction tube 203, the inner tube 204, the inlet flange 210, and the seal cap 219. Further, the inner tube 204 is mounted on the inlet flange 210. The seal cap 219 is provided with a boat 217 which is a substrate holding portion (holding portion) with a quartz cap 218 interposed therebetween. The quartz cap 218 and the boat 217 are carried in and out of the processing chamber 201. In the boat 217, a plurality of wafers 200 to be subjected to batch processing are horizontally stacked in multiple stages. The heater 207 heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.

A gas pipe 10 as a gas pipe for supplying a first process gas (source gas) and a gas pipe 11 for supplying a second process gas (reaction gas) are connected to the process chamber 201. The gas piping 10 is provided with a gas feeder 4 for supplying a first raw material gas as a first process gas from the upstream side, a flow controller 41 for controlling the flow rate of the first raw material gas from the gas feeder 4 Flow controller: MFC) and a valve 34 for opening and closing the flow path of the first raw material gas. The first process gas is supplied from the gas pipe 10 through the nozzle 234 provided in the process chamber 201 via the gas feeder 4, the MFC 41 and the valve 34, do. The first gas supply system is constituted by the gas piping 10, the flow controller 41, the valve 34 and the nozzle 234.

The gas piping 11 is provided with a gas feeder 5 for feeding a first reaction gas as a second process gas from the upstream side, a flow controller 32 for controlling the flow rate of the first reaction gas from the gas feeder 5, 1, a valve 35 for opening and closing the flow path of the reaction gas is provided. The second processing gas is supplied from the gas piping 11 to the processing chamber 201 through the nozzle 233 provided in the processing chamber 201 via the gas feeder 5, the flow controller 32 and the valve 35 . The second process gas supply system is constituted by the gas pipe 11, the MFC 32, the valve 35 and the nozzle 233.

A gas piping heater 22 for heating the gas piping 10 is installed around the gas piping 10 from the gas supply unit 4 to the processing chamber 201. The jacket heater 310 as the second heating unit according to the embodiment is used for the gas piping heater 22 (hereinafter also referred to as the first piping heater). A gas piping 40 for supplying an inert gas to the gas piping 10 is connected to the downstream side of the valve 34 via a valve 39. In this embodiment, the heater for the gas piping is not provided in the second process gas supply system, but the jacket heater 310 according to the present embodiment may be appropriately provided in accordance with the second process gas.

The treatment chamber 201 is connected to the vacuum pump 246 via an APC valve 243 by an exhaust pipe 231 serving as an exhaust gas pipe for exhausting gas. The exhaust pipe 231, the APC valve 243, and the vacuum pump 246 constitute a gas exhaust system. Around the exhaust pipe 231 from the reaction pipe 203 to the vacuum pump 246 is provided a heater 20 for exhaust pipe (hereinafter also referred to as a second pipe heater) as a third heating unit for heating the exhaust pipe 231, Respectively. The jacket heater 310 is also used for the exhaust pipe heater 20. Thereafter, the exhaust pipe heater 20 and the gas pipe heater 22 may be collectively referred to as a piping heater 310. Similarly, the gas piping 10, 11, 40, and 231 may be simply referred to as a gas piping.

A nozzle 234 extends from the lower part of the reaction tube 203 to the upper part in the longitudinal direction. The nozzle 234 is provided with a plurality of gas supply holes for supplying a source gas. This gas supply hole is opened at a position between the wafer 200 and the wafer 200 opposed to each other via the inner tube 204, and the process gas is supplied to the wafer 200. The nozzle 233 is installed at a position away from the position of the nozzle 234 in the inner circumferential direction of the reaction tube 203 in the same manner as the nozzle 234. A plurality of gas supply holes are similarly provided in the nozzle 233. The nozzle 234 communicates with the gas piping 10 as described above and supplies the first process gas into the process chamber 201 and the inert gas from the gas piping 40 connected to the gas piping 10. The nozzle 233 communicates with the gas piping 11 as described above and supplies inert gas from the gas piping 6 connected to the second processing gas and the gas piping 11 in the processing chamber 201. The processing gas is supplied alternately from the nozzle 234 and the nozzle 233 to the processing chamber 201 to perform film formation.

A boat 217 for placing a plurality of wafers 200 in multiple stages at equal intervals is provided in the inner tube 204 and the boat 217 is made to be able to enter and exit the processing chamber 201 by a boat elevator . In order to improve the uniformity of the processing, a boat rotation mechanism 267, which is rotation means for rotating the boat 217, is provided, and a boat (not shown) 217).

[Configuration of control system 300]

2, the control system 300 includes a main controller 321 as a control unit and a device management controller 215 for collecting device data transmitted from the control unit 321 and monitoring the device data .

Here, the device data includes data (e.g., set values, measured values) relating to the substrate processing such as a processing temperature at which the substrate processing apparatus 200 processes the substrate 200, a processing pressure, a flow rate of the processing gas, (Set value, measured value) of the data relating to the constituent parts (reaction tube, heater, valve, MFC, etc.) of the substrate processing apparatus 100, And data generated by operating the respective components when the substrate processing apparatus processes the substrate 200. [

The measured value data of a specific interval collected during execution of the recipe, for example, actual value data from the start of the recipe to the end of the recipe and the statistical quantity data of each step in the recipe (which may simply be omitted as a statistic) may be referred to as process data, May also be included in the device data. Typically, statistical data includes maximum, minimum, and average values. It is also possible to display event data (e.g., maintenance history) indicating various device events during recipe execution, when the recipe is not executed (for example, during maintenance such as replacement of parts constituting the idle apparatus in which no substrate is inserted into the apparatus) Data) is included in the device data.

[Functional Configuration of Main Controller 321]

Next, the control unit 321 will be described with reference to Fig.

The control unit 321 includes a heater 207, a heater 22 for gas piping, a heater 20 for exhaust piping, MFCs 32, 33 and 41, valves 34, 35, 36 and 39, The heater 207 is connected to the APC valve 243, the vacuum pump 246, the boat rotation mechanism 267 and the boat elevating mechanism. The heater 207, the heater 22 for gas piping, The opening and closing operations of the valves 34, 35, 36 and 39 and the APC valve 243, the starting and stopping of the vacuum pump 246, the control of the flow rate of the flow controllers 32, 33 and 41, Control of the rotational speed of the rotating mechanism 267, control of the lifting operation of the boat lifting mechanism, and the like are performed.

The control unit 321 is configured as a computer having a CPU 321a (Central Processing Unit), a RAM 321b (Random Access Memory), a storage device 321c, and an I / O port 321d. The RAM 321b, the storage device 321c and the I / O port 321d are configured to exchange data with the CPU 321a via the internal bus 321e. The control section 321 is connected to an operation display section 322 which is an input / output device configured as, for example, a touch panel.

The storage device 321c is constituted by, for example, a flash memory or the like. In the storage device 321c, a control program for controlling the operation of the substrate processing apparatus, a process recipe describing the order and condition of substrate processing to be described later, and the like are stored so as to be readable. In addition, the process recipe is combined so as to obtain predetermined results by executing the respective procedures in the substrate processing step including the substrate carrying-in step (S102) to the substrate carrying-out step (S106) described later on the control part 321. The RAM 321b is configured as a memory area (work area) in which programs and data read by the CPU 321a are temporarily held.

The I / O port 321d is connected to the flow controllers 32, 33 and 41, the valves 34, 35, 36 and 39, the pressure sensor APC valve 243, the vacuum pump 246, the heater 207, A piping heater 310 (gas piping heater 22, exhaust piping heater 20), a thermocouple 550 as a temperature detecting portion, a rotating mechanism 267, a boat elevator, and the like.

The CPU 321a is configured to read and execute the control program from the storage device 321c and to read the process recipe from the storage device 321c in response to an input of an operation command from the operation display section 322 which is an input / . The CPU 321a controls the flow rate of various gases by the flow controllers 32 and 41 and the opening and closing operations of the valves 34 and 35 and the APC valve 243 so as to follow the contents of the read process recipe. And a pressure adjusting operation based on the pressure sensor by the APC valve 243, a temperature adjusting operation of the heater 207 based on the temperature sensor installed in each zone, a piping heater 310 based on the thermocouple 550 (The heater 22 for the gas piping and the heater 20 for the exhaust piping), the start and stop of the vacuum pump 246, the rotation and rotation of the boat 217 by the rotation mechanism 267 A speed adjusting operation, an elevating operation of the boat 217 by a boat elevator, and the like.

The control unit 321 can be configured by installing the above-described program stored in the external storage device 323 (for example, a semiconductor memory such as a USB memory or a memory card) in the computer. The storage device 321c and the external storage device 323 are configured as a computer-readable recording medium. Hereinafter, they are simply referred to as recording media. In the present specification, the term " recording medium " refers to a case where only one storage device 321c is included, a case where only one external storage device 323 is included, or both cases have. Further, the program may be provided to the computer without using the external storage device 323, and communication means such as the Internet or a dedicated line may be used.

[Functional Configuration of Device Management Controller 215]

3, the apparatus management controller 215 includes a screen display section 215a, a screen display control section 215b, a device status monitoring section 215e, an abnormality analysis support section 215f, and a control section 321 A communication unit 215g that performs transmission and reception of device data of the substrate processing apparatus 100 between the substrate processing apparatus 100 and the substrate processing apparatus 100 (a control unit 321), a memory And a portion 215h.

[Screen display unit 215a]

The screen display unit 215a is configured to display the function of the device management controller 215. [ Alternatively, instead of the screen display section 215a, the display may be configured to be displayed using the operation display section 322 of the control section 321, or may be replaced with an operation terminal or the like.

[Screen display control unit 215b]

The screen display control section 215b processes the device data collected by executing the screen display program into data for screen display and creates and updates the screen display data and displays it on the screen display section 215a or the operation display section 322 . Further, in the present embodiment, not the screen display section 215a but the display on the operation display section 322 is configured.

[Parts management control unit 215d]

The parts management control unit 215d has a parts life monitoring function and executes the parts management program. The part management data stored in the storage unit 215h is updated based on the part management data (the number of times of use of the part or the use time), which is one of the device data of the substrate processing apparatus 100 received from the control unit 321. [

[Device state monitoring unit 215e]

The device status monitoring unit 215e includes a device status monitoring program (hereinafter also referred to as a monitoring program) in a memory (e.g., the storage unit 215h) to execute the device status monitoring function. 7, the apparatus state monitoring unit 215e includes a setting unit 311, an FDC (Fault Detection and Classification) monitoring unit 313, and a diagnosis unit 315. [ Here, FDC is a technique for classifying the above types by monitoring the output of each semiconductor manufacturing apparatus and, when an abnormality is detected, by statistically processing the result. The piping temperature error monitoring program in this embodiment, which is one of the monitoring programs executed by the device status monitoring control unit 215e, will be described later.

The setting unit 311 sets the designation value of the upper limit value and the designation value of the lower limit value related to the device data from the device data to be monitored specified by the input (operation command input, etc.) from the operation display unit 322, And instructs the monitoring unit 313 and the diagnosis unit 315. [

The FDC monitoring unit 313 generates reference data to be targeted (including, for example, a temporal waveform of the reaction room temperature, an upper limit value, a lower limit value, and the like) based on the device data set by the setting unit 311, To monitor the apparatus data of the substrate processing apparatus 100. [ That is, the device data transmitted every second from the substrate processing apparatus 100, and the reference data, and determines that the device data is abnormal if the device data deviates from a predetermined range determined from the reference data. For example, to indicate that the operation display section 322 has detected an abnormality.

The diagnosis unit 315 performs diagnosis of the device data or statistical amount data using a predetermined abnormality diagnosis rule. When the abnormality is diagnosed as an abnormality, for example, the operation display section 322 is configured to display an indication of abnormality.

(Hereinafter referred to as U.FDC in Fig. 9, which will be described later), which is one of the FDCs executed in the abnormal device status monitoring unit 215e. In U.FDC, SPC items (such as the temperature of the reaction chamber) that are the minimum necessary for semiconductor manufacturing are diagnosed.

The device status monitoring unit 215e executes the monitoring program to collect the device data from the start to the end of the process recipe at specific intervals along with various information defined in the monitoring content to be described later, (For example, a maximum value of the device data, a minimum value of the device data, and an average value of the device data) at the time of termination. The device status monitoring and controlling section 215e is configured to store these device data in the storage section 215h as production history information for each batch process.

The device status monitoring unit 215e in the present embodiment is also configured to store the event data including the maintenance information while the process recipe is not executed in the storage unit 215h. According to this configuration, since the association between the statistical amount of the device data and the maintenance operation can be displayed on the operation display unit 322 or the like, it is possible to display a phenomenon that can not be displayed with numerical values (event data relating to an event such as maintenance, The fluctuation factor of the data can be confirmed efficiently.

[Error Analysis Supporting Unit (215f)]

The anomaly analysis support unit 215f executes analytical data for analyzing the cause of the abnormality when the abnormality phenomenon (for example, the film thickness of the substrate which is a product) occurs by executing the data analysis program on the operation display unit 322, As shown in FIG. This contributes to a reduction in analysis time due to a shortening of the analysis time and a deviation in the skill of the repair source.

As described above, the device management controller 215 is connected to the control unit 321 via a LAN line, collects device data from the control unit 321, processes the accumulated device data and displays it on the operation display unit 322 It is possible. The device management controller 215 has a device status monitoring function or a part life monitoring function and displays the operation status of the device as shown in FIG. 10 on the operation display unit 322).

The hardware configuration of the device management controller 215 is the same as that of the control unit 321 described above. Further, the device management controller 215 can be realized using a normal computer system instead of a dedicated system as in the control unit 321. [ The device management controller 215 can be configured by installing various programs stored in an external storage device 323 (for example, a semiconductor memory such as a USB memory) in the computer in the same manner as the control section 321. The control section 321, The means for supplying various programs is arbitrary.

(Device status monitored item)

Here, the subject of the device status monitoring will be briefly described with reference to FIG. As shown in Fig. 9, a reaction chamber, a transfer chamber, is shown as an area " area " of the substrate processing apparatus 100. As shown in Fig. Also, temperature, pressure, gas, exhaust, water (water) are shown as items "modules" in the reaction chamber. The oxygen concentration is also shown as an item " module "

U.FDC is a diagnostic method using SPC described above. U.FDC is an abbreviation of User Fault Detection & Classification, and is a simple setting for specifying a recipe, a step, an item (e.g., temperature), and the like by a user of the substrate processing apparatus 100 .

The SFDC is a monitoring item for checking whether the state of the constituent (for example, the opening / closing valve, the heater, or the MFC) of the substrate processing apparatus 100 is within the normal range. S.FDC is an abbreviation of "Special Fault Detection & Classification" and is executed by expanding surveillance contents as surveillance tables created by the maker of the substrate processing apparatus 100 into a device status monitoring program.

Here, the monitoring content includes a phenomenon (an item) at the time of occurrence of an abnormality as an abnormal phenomenon, a device data type set for detecting an abnormality of the item, At least a rule for diagnosing abnormality of (or a value of) the device data is defined at least for the statistical amount of the device data corresponding to the device data type, the monitoring period for calculating the statistic amount from the device data, and the like.

In the present embodiment, the S.FDC is used, for example, for diagnosing the temperature drop of the piping. For example, device data indicating power as device data to be monitored, for example, device data indicating the heater power value (unit:%) and temperature of the piping heater, The heater power value of the pipe heater is diagnosed as being within the threshold value when the measured temperature value of the pipe heater satisfies a predetermined condition (when it indicates a normal value).

Here, the difference between the average value of the heater power values of the pipe heater and the average value of the heater power values calculated last time is judged when the difference between the average value of the actual measured values of the pipe and the average value of the measured temperature values obtained last is less than ± 5 ° C. Also, no comparison is made regarding the heater power value when the difference is greater than ± 5 ° C.

The " part " is an item for diagnosing the maintenance time of a part by comparing data (use time, number of times of use, etc.) related to the service life of the parts constituting the substrate processing apparatus 100 and a recommended value of the part maker.

If the abnormality is found in each of the diagnosis items, the device status monitoring result data (for example, icon A indicating abnormality) is displayed at a predetermined place (location). For example, in FIG. 9, the icon A displayed on the operation display unit 322 is confirmed, and it is found that the abnormality related to the "exhaust" as an item in the reaction chamber is judged to be abnormal as a result of monitoring by S.FDC.

(3) Substrate processing step

Next, the outline of a substrate processing process for processing a substrate using a substrate processing apparatus as a semiconductor manufacturing apparatus will be described. This substrate processing step is a step for manufacturing a semiconductor device, for example. In the following description, the operation and processing of each part constituting the substrate processing apparatus are controlled by the control section 321. [

Here, an example in which a film is formed on the wafer 200 by alternately supplying the first process gas (source gas) and the second process gas (reaction gas) to the wafer 200 as the substrate will be described. (Silicon nitride) film is formed as a thin film on the wafer 200 by using hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCDS) gas as a source gas and NH ₃ (ammonia) Will be described. Further, for example, a predetermined film may be formed on the wafer 200 in advance, or a predetermined pattern may be formed in advance on the wafer 200 or a predetermined film.

The substrate processing process will be described with reference to FIG.

[Substrate carrying-in step (S102)]

First, the wafer 200 is loaded on the boat 217 and carried into the processing chamber 201 to carry out the substrate carrying-in step (S102).

[Film forming step (S104)]

Next, a film forming step (S104) for forming a thin film on the surface of the wafer 200 is performed. The film forming process sequentially executes the following four steps. During the steps 1 to 4, the wafer 200 is heated to a predetermined temperature by the heater 207. The heater 22 for gas piping also heats the gas piping 10 to a first specified temperature. The first specified temperature is appropriately set in accordance with the raw material gas. In the present embodiment, since Si ₂ Cl ₆ is used as the source gas, it is heated to 180 ° C or higher, for example, as the first specified temperature during the film formation step (S 104). The exhaust pipe heater 20 is heated to at least 100 캜 during the film forming step (S104).

[Step 1]

In step 1, Si ₂ Cl ₆ gas is flowed. The valve 34 provided in the gas pipe 10 and the APC valve 243 provided in the exhaust pipe 231 are opened together and the flow rate controller 41 controls the flow rate of Si ₂ Cl ₆ Gas is exhausted from the exhaust pipe 231 while passing through the gas pipe 10 and supplied into the process chamber 201 from the gas supply hole of the nozzle 234. [ At this time, the heater 22 for gas piping heats the gas piping 10 and the heater 20 for the exhaust piping heats the exhaust piping 231 to a predetermined temperature. At this time, the pressure in the processing chamber 201 is maintained at a predetermined pressure. Thereby forming a silicon thin film on the surface of the wafer 200.

[Step 2]

In step 2, the valve 34 of the gas pipe 10 is closed to stop the supply of the Si ₂ Cl ₆ gas. The APC valve 243 of the exhaust pipe 231 is opened to exhaust the processing chamber 201 by the vacuum pump 246 and exclude the residual gas from the processing chamber 201. A valve 39 provided in the gas pipe 40 is opened to supply an inert gas such as N ₂ to the process chamber 201 from the gas pipe 40 to purge the process chamber 201, And the gas is discharged to the outside of the processing chamber 201. At this time, the heater 22 for gas piping heats the gas piping 10 and the heater 20 for the exhaust piping heats the exhaust piping 231. The valve 36 provided in the gas pipe 6 is opened and an inert gas such as N ₂ whose flow rate is controlled by the flow rate controller 33 is supplied from the gas pipe 6 to the processing chamber 201.

[Step 3]

In step 3, NH ₃ gas is flowed. The valve 35 provided in the pipe 11 and the APC valve 243 provided in the exhaust pipe 231 are opened together and the NH ₃ gas whose flow rate is adjusted by the flow controller 32 is supplied from the gas feeder 5 to the gas pipe 11 And is exhausted from the exhaust pipe 231 while being supplied to the process chamber 201 from the gas supply hole of the nozzle 233. [ At this time, the heater 20 for the exhaust pipe heats the exhaust pipe 231. Further, the pressure in the treatment chamber 201 is adjusted to a predetermined pressure. By the supply of the NH ₃ gas, the Si thin film formed on the surface of the wafer 200 by the Si ₂ Cl ₆ gas reacts with the surface of the NH ₃ gas to form the SiN film on the wafer 200.

[Step 4]

In step 4, purging of the processing chamber 201 by the inert gas is performed again. The valve 35 of the gas pipe 11 is closed to stop the supply of the NH ₃ gas. The APC valve 243 of the exhaust pipe 231 is opened and the processing chamber 201 is evacuated by the vacuum pump 246 and the residual gas is removed from the processing chamber 201. The valve 36 provided in the gas pipe 6 is opened and an inert gas such as N ₂ whose flow rate is controlled by the flow rate controller 33 is supplied from the gas pipe 6 to the processing chamber 201, . At this time, the heater 20 for the exhaust pipe heats the exhaust pipe 231. Further, a valve 39 provided in the gas pipe 40 is opened to supply an inert gas such as N ₂ from the gas pipe 40 to the processing chamber 201. At this time, the heater 22 for gas piping heats the gas piping 10 and the gas piping 40.

The above steps 1 to 4 are set as one cycle, and this cycle is repeated a plurality of times to form a SiN film having a predetermined film thickness on the wafer 200.

[Substrate removal step (S106)]

Next, the boat 217 on which the wafer 200 on which the SiN film is formed is taken out from the processing chamber 201.

According to the present embodiment, the raw material (Si ₂ Cl ₆ ) gas is supplied from the gas piping 10 to the processing chamber 201 while being heated by the heater 22 for gas piping, The temperature deviation of the gas piping 10 and the exhaust piping 231 can be reduced and the stability of the gas temperature and the gas rushing of the processing chamber 201 can be improved. As a result, the raw material gas can be supplied to the processing chamber 201 at a desired gas flow rate, and the uniformity of the film formation can be improved.

While the exhaust piping heater 23 heats the exhaust piping 231 at least while the cycle of the steps 1 to 4 is repeated a plurality of times in this embodiment, the gas piping heater 22 is connected to the gas piping 10 and the gas piping (40) is continuously heated, whereby the strength in the heating state is decreased in the direction of decreasing the temperature, so that the temperature can be easily controlled. In the present embodiment, the temperature of the exhaust pipe heater 20 may be controlled while the exhaust pipe heater 23 is heated during the process recipe execution (from the substrate carrying-in step (S102) to the substrate carrying-out step (S106) Either one of the pipe 10 and the exhaust pipe 231 may be subjected to temperature control while being heated.

(Example)

First, a piping heater as a heating unit in this embodiment will be described. In the following description, the temperature detector 550 will be described in detail.

The jacket heater 310 as a piping heater is configured to cover the exhaust pipe 231 (gas pipe 10) made of a metal member such as SUS with an envelope, as shown in Figs. 5B and 5C . The piping heater 310 is provided outside the enclosure surrounding the heat-generating body (not shown) and the heat insulating portion which is disposed on the opposite side of the heat-generating body gas pipe. The pipeline heater 310 has one end side (one end side) And a thermocouple 550 for detecting the temperature of the exhaust pipe 231 (gas piping 10). The fixing portion 700 includes a fixing portion 700 for fixing the one end and the other end in the adjacent state.

The control unit 321 adjusts the electric power (heater power value) output to the piping heater 310 based on the temperature (actual value) detected by the thermocouple 550 and controls each piping (exhaust piping 231, (Actually measured value) of the vehicle 10 (or the like) to a predetermined set value.

5B is a cross-sectional view of the state in which the temperature detecting unit 550 is installed in a state where the outside of the piping heater 310 is surrounded by the heat insulating material, All. Further, when the piping heater 310 is mounted on the outer periphery of the exhaust pipe 231 (gas piping 10), one end side and the other end side of the enclosure are made adjacent to each other so that a gap (gap) Is covered by the insulating layer 700 is shown.

If the pipe heater 310 is mounted on the outer periphery of the exhaust pipe 231 (the gas pipe 10) in this way, a gap may be generated between the pipe heater and the pipe, and the position of the thermocouple 550 may be displaced.

Since the thermocouple 550 is provided on the side of the exhaust pipe 231 (gas pipe 10) as shown in FIGS. 5B and 5C, if the piping heater 310 is detached before and after the maintenance, Even if there is a positional deviation of the positional deviation from the outer appearance. Even when the position of the thermocouple 550 changes, for example, when the piping heater 310 is again wound after the piping replacement or cleaning operation, the change in the actual measured value (actual temperature) 550) was treated as a temperature measured value in the pipe.

Since the actual temperature is controlled so as to follow the set temperature, the temperature detected by the thermocouple 550 is necessarily controlled so as to follow the set temperature. Therefore, even if the position of the thermocouple 550 deviates, Is detected. Therefore, even if only the actual measured value of the temperature is monitored to detect the temperature drop error in the gas piping, the temperature change in the gas piping can not be determined. For example, when the position of the thermocouple 550 is close to a heat source (e.g., a pipe), the detected temperature (measured value of temperature) of the thermocouple 550 before and after the maintenance is the same even if the temperature is within the gas pipe before maintenance The actual temperature is lowered.

Here, if the heater power value of the piping heater 310 changes, the temperature in the gas piping also changes, so it is necessary to monitor the rapid change or shift of the heater power value of the piping heater 310. However, even if only the heater power value of the pipeline heater 310 is monitored, it is not possible to monitor whether the heater power value of the pipeline heater 310 has changed by intentionally changing the set value of the pipeline temperature. For example, when the film forming conditions are changed and the gas flow rate in the piping is increased, the heater power value is also changed when the process conditions such as cooling the piping by the gas temperature and slightly increasing the set value of the temperature are changed. In this case, there is a high possibility that an abnormality is detected only by the heater power value of the piping heater 310.

Fig. 11 shows a problem caused by the temperature instability in the gas pipe due to the positional change of the thermocouple 550 caused by the detachment of the piping heater 310 due to such maintenance. As shown in Fig. 11, if the temperature in the actual pipe of the exhaust pipe 231 is lowered, it is necessary to carry out cleaning when the by-product adheres to the pipe and accumulates to some extent. As the number of cleaning times increases, this leads to a decrease in the operation rate of the apparatus. On the other hand, when the temperature in the piping of the gas piping 10 is lowered, the vaporized gas is liquefied and solidified in the noble portion 210, thereby causing a film thickness abnormality (for example, do.

In order to solve the above-described problem, the inventors of the present invention have developed surveillance contents (surveillance table) to detect an abnormal phenomenon (piping temperature error in the present embodiment) and directly use this surveillance table to detect the temperature in the piping It is possible to detect an abnormality (error) caused by a temperature drop in the pipe without fail.

Fig. 6 shows a monitoring table for detecting exhaust pipe temperature error. This monitoring table is defined as an exhaust pipe temperature error as a phenomenon (an abnormal phenomenon) in the occurrence of an abnormality, and includes a device data type for detecting the abnormality, a statistic amount of device data corresponding to the device data type, An execution step name (e.g., a film formation step) is defined. The monitoring timing starts (starts) from the first step in the execution step.

The diagnostic rule of abnormality is defined as a diagnostic rule defined in rule (38). The device status monitoring and controlling section 215e performs an abnormality determination in accordance with this diagnosis rule. For example, the rule 38 indicates that the average value in the current batch process of the measured value of the piping temperature of the first device data to be monitored is a variation smaller than the reference value in comparison with the average value in the previous batch process, (Rule) that the current average value of the heater power values of the pipe heaters of the first and second pipe heaters fluctuates by more than a threshold value in comparison with the previous average value.

In this monitoring table, device data (device data indicating temperature) not related to an item indicating an abnormal phenomenon, device data related to an item indicating an abnormality (device data indicating power ) Is defined. The heater power value of the pipe heater 310 for heating the exhaust pipe 231 is defined as the device data related to the abnormal phenomenon, the average value of the heater power value is defined as the statistical quantity, The actual measured value of the temperature of the exhaust pipe 231 is defined, and the average value of the actually measured value of the temperature is defined as a statistical quantity. In this embodiment, the device data related to the abnormal phenomenon is device data directly affecting the temperature (actual temperature) in the piping, and the device data not related to the abnormal phenomenon is the device data All.

Fig. 8 shows a flow in which the apparatus state monitoring section 215e executes a piping temperature error program (monitoring program) based on the above-described monitoring table. When the device management controller 215 is activated, the monitoring program is automatically started. The temperature of the exhaust pipe 231 which is provided in the pipe heater 310 for heating the exhaust pipe 231 and which is obtained from the thermocouple 550 for detecting the temperature of the exhaust pipe 231 is added to the process recipe constituted by a plurality of steps in this embodiment, And a program for controlling the temperature of the exhaust pipe 231 while outputting a predetermined heater power value to the pipe heater 310 based on the measured value.

Therefore, the control unit 321 is configured to execute the temperature control program when executing the process recipe. Here, the present invention is not limited to the exhaust pipe 231, but may be applied to the gas piping 10 as well. Further, the control unit 321 may be configured to transmit (or store in the storage unit 215) various pieces of device data (including actual temperature values and heater power values) normally reported from the components constituting the apparatus to the communication unit 215g do. In addition, the control unit 321 executes a process recipe to perform a predetermined process on the wafer 200, hereinafter, simply referred to as a batch process.

In step S201,

The device status monitoring unit 215e monitors the device data transmitted from the control unit 321 and confirms the presence or absence of event data indicating the start of the designated step specified in the monitoring table. For example, if event data indicating the start of the designated step is detected from the device data, the process proceeds to step S202. If there is no event data related to the designated step, the process enters the standby (standby) state.

In step S202,

When the event data indicating the start of the designation step is detected, the device state monitoring unit 215e compares the actually measured temperature value of the pipe type of the monitoring target device data (device data defined in the monitoring table) and the heater power value of the piping heater 310 From the transmitted device data. The device status monitoring unit 215e may access either the communication unit 215g or the storage unit 215h.

In step S203,

The apparatus state monitoring unit 215e acquires the temperature measured value of the exhaust pipe 231 included in the apparatus data and the heater power value of the piping heater 310 until the event data indicating the end of the specifying step is detected.

In step S204,

(Temperature average value of the exhaust pipe 231) as a statistic defined in the monitoring table from the actual temperature values obtained in the specified step. Also, the average value (power average value output to the piping heater 310) is similarly calculated as the statistical value with respect to the heater power value acquired in the designated step.

In step S205,

The fluctuation of the statistic amount is compared with the average temperature value of the exhaust pipe 231 in the same specification step in the previous batch process held in advance in the storage unit 215h. More specifically, the apparatus state monitoring unit 215e determines whether or not the difference between the average temperature value in the designated step in the present batch process and the average temperature value in the same specifying step in the previous batch process exceeds a reference value (e.g., (The statistical amount of the apparatus data indicating the temperature) of the exhaust pipe 231 calculated without determining the variation of the power average value (the statistical amount of the apparatus data indicating the power) output to the calculated piping heater 310, And the average power value output to the piping heater 310 are stored in the storage unit 215h and the process returns to the step S201 for confirming the designation step again.

The reason why the apparatus state monitoring unit 215e does not judge that the fluctuation of the actually measured value of the pipe is greater than or equal to the reference value is that the abnormality is diagnosed according to the diagnosis rule of the monitoring table. In the present embodiment, the soundness of the temperature measured value data of the piping is managed by the SPC (U. SPC) of the public knowledge separately from the monitoring program (the present process flow), and it is judged whether the measured temperature actual value data is abnormal. In this case, if the abnormality is diagnosed, the icon A is displayed in the cell of the exhaust of the U.SPC of FIG. 9 as the device status monitoring result data.

On the other hand, if the difference between the temperature average value in the designated step in the current batch process and the temperature average value in the same specifying step in the previous batch process is within the reference value, then the apparatus state monitoring section 215e advances to the next step (S206).

In step S206,

The apparatus status monitoring unit 215e monitors the temperature of the piping heater 310 of the exhaust pipe 231 in the same specification step in the previous batch process in which the average value (statistic amount) of the calculated heater power values is stored in advance in the storage unit 215h (Statistic) of the heater power values to determine the variation of the average value of the heater power values.

More specifically, the device status monitoring unit 215e compares the average value of the heater power values of the piping heaters 310 in the designated step in the present batch process with the average value of the heater power values in the same specifying step in the previous batch process held in advance in the storage unit 215h (The statistical amount of the apparatus data indicating the temperature) of the exhaust pipe 231 calculated when the difference between the average value of the heater power values of the pipe heater 310 in the exhaust pipe 231 and the average value of the heater power values of the pipe heater 310 in the exhaust pipe 231 is within a threshold value And the average power value output to the piping heater 310 are stored in the storage unit 215h and the designation step is confirmed again.

On the other hand, the device status monitoring unit 215e monitors the average value of the heater power values of the piping heaters 310 in the designated step in the present batch process and the heater power values of the piping heaters 310 in the same specifying step in the previous batch process (Device data indicating the temperature) of the exhaust pipe 231 calculated based on the determination that the piping temperature error in the exhaust pipe 231 occurs, if the difference from the average value of the exhaust pipe 231 is not the threshold value, Stores the average power value in the storage unit 215h, and notifies occurrence of the abnormality by an alarm or the like.

For example, the device status monitoring unit 215e displays the occurrence of the piping temperature error as the device status monitoring result data on the operation display unit 322 with the icon A shown in FIG. The device status monitoring unit 215e may also be configured to cause the operation display unit 322 to display the device overview drawing so that the error occurrence unit (the unit corresponding to the area or the module shown in Fig. 9) is distinguishably displayed. The device status monitoring unit 215e may also be configured to notify the control unit 321 of the occurrence of the exhaust pipe temperature error.

Since the heater power value of the piping heater 310 directly affects the actual temperature in the piping, it is necessary to monitor the rapid fluctuation or the shift. However, it is assumed that the heater power value (or the average value) of the piping heater 310 is changed by intentionally changing the set temperature value, and the fact that the measured temperature value is equal to the previous time or below the reference value is determined I decided to confirm that. The actual temperature of the piping heater 310 is used to ensure the relationship between the actual temperature and the power that is insufficient only by the set value. As a result, when (the average value of) the temperature is the same and the heater power (average value) of the piping heater fluctuates, it can be judged that the fault (disconnection) of the thermocouple or the displacement of the mounting position is the cause of the abnormality.

According to the present embodiment, it is possible to monitor all the piping heaters relatively easily by using this monitoring table. The monitoring table may be newly registered in the same manner even if the temperature of the gas piping 10 is set to the temperature of the exhaust pipe 231 in the present embodiment and the temperature of the piping heater 310 for heating the gas piping 10 It is possible to automatically detect the piping temperature error in the gas piping 10 by defining (the average value of the heater power) and the measured value of the temperature of the gas piping 10 (the average value) in the monitoring table and executing the monitoring program.

According to the present embodiment, it is possible to detect an abnormality in temperature change of the gas piping 10. Therefore, by performing recovery processing such as winding the piping heater 310 again, for example, liquefaction of the processing gas due to the temperature drop of the gas piping 10 can be suppressed, Of the liquefied gas is not stirred. Therefore, the influence on the film thickness can be suppressed, so that deterioration of the processing quality of the substrate can be suppressed.

According to the present embodiment, it is possible to detect an abnormality in the temperature change of the exhaust pipe 231. [ Therefore, by performing recovery processing such as winding the pipe heater 310 again, adhesion of by-products to the exhaust pipe 231 can be suppressed by, for example, the temperature of the exhaust pipe 231 being lowered. As a result, the cleaning cycle can be extended.

According to the present embodiment, it is possible to confirm a change in the temperature of the pipe heater intentionally by comparing (an average value) of the measured values of the pipe temperature in the present batch process with the measured values (the average value) of the pipe temperature in the immediately preceding batch process have. Further, not only the measured value but also the set values of the pipe temperature may be compared together.

In the flow of the monitoring program shown in Fig. 8, step information as a period (monitoring period) defined in the monitoring table shown in Fig. 6 is defined as a film forming step. Therefore, the execution of this monitoring program is performed when a batch process is performed to execute a process recipe and perform a predetermined process on the wafer 200. [ However, this monitoring period is not limited to only the step information, but may be defined by, for example, time information such as time. The monitoring program stores the statistical amount calculated at the end of the film forming step of the process recipe in the storage unit 215h, and the next process recipe is executed and is in the waiting state until the film forming step defined in the monitoring table.

Further, in the present embodiment, the device status monitoring unit 215e is configured to notify the control unit 321 of the occurrence of the exhaust pipe temperature error, and the control unit 321 which receives the error notification executes the process recipe in execution while viewing this error . Then, the control unit 321 controls to not start the process recipe to be executed next when the process recipe ends, while viewing this error. As a result, it is possible to suppress the influence of the temperature drop in the gas exhaust pipe 231 or the temperature of the gas pipe 10 to the wafer 200, thereby suppressing the deterioration of the product quality of the substrate. It is also connected to prevent loss of the substrate.

In this embodiment, as shown in Fig. 9, a display example (icon A) showing the execution result of the monitoring program as one of the device status monitoring result data shown in Fig. 8 is displayed. When the icon A (or the cell in which the icon A is displayed) is selected from the screen shown in Fig. 9, the anomaly analysis support unit 215f is configured to execute the data analysis program.

The anomaly analysis support unit 215f searches the inside of the storage unit 215h by the type of the device data (measured value of piping temperature or heater power value) defined in the monitoring table by executing the data analysis program, For example, to display the statistical amount data of the apparatus data on the operation display unit 322 so as to return to the past from the time when the current batch process is executed.

In this manner, the anomaly analysis support unit 215f is configured to display on the operation display unit 322 the information necessary for the analysis (for example, the average value of measured values of the device data corresponding to the device data type defined in the monitoring table). The anomaly analysis support unit 215f executes the data analysis program only by inputting the minimum condition at the time of occurrence of the abnormality of the maintenance source to the operation display unit 322 and similarly displays the information necessary for the analysis on the operation display unit 322 .

For example, FIG. 10 shows an example of displaying information necessary for analysis by executing the data analysis program by the anomaly analysis support unit 215f. The horizontal axis in Fig. 10 represents the time at which the batch was executed in common on the upper graph and the lower graph, and the vertical axis represents the average value of the measured actual values of the temperature of the piping at predetermined steps. Represents the average value of the heater power value of the piping heater 310 at a predetermined step. Here, the predetermined step in this embodiment is a film forming step for forming a film on the wafer 200, for example.

As shown in Fig. 10, the average value of the actually measured values of the temperature of the piping and the average value of the heater power values of the piping heater 310 for each batch treatment are displayed a predetermined number of times back from the present batch processing. The mean value of the measured temperature was constantly controlled at 100 ° C in all the batches, but the average value of the heater power increased from 50% to 70% at the time of abnormality (indicated by the dotted line) .

As a result, the heater power value of the pipeline heater 310 fluctuates within the range where the actual temperature of the pipeline is equal to or smaller than the predetermined value, so that a failure of the thermocouple 550 or a deviation of the installation position of the thermocouple 550 is conceivable. As described above, in the present embodiment, the anomaly analysis support unit 215f is a unit data type for detecting this anomaly, and information obtained by combining device data not related to an anomaly phenomenon and apparatus data related to an anomaly phenomenon It is possible to confirm the validity of the detection result on the visual guidance, thereby reducing the error in the detection of the abnormality.

As shown in Fig. 10, the measured actual temperature of the piping and the heater power of the piping heater are displayed on the operation display unit 322 in a state where the horizontally aligned batch process is aligned with the graph. However, (322). Thus, by confirming the change in the heater power of the piping heater between the batches, the temperature change in the piping can be estimated.

Since the event data such as the alarm generation history is generated in the same manner as the piping temperature error, the anomaly analysis support unit 215f searches the production history information in the storage unit 215h and displays the event data on the operation display unit 322 Maybe. As a result, if the data such as the maintenance information can not be represented by a numerical value in a graph and displayed, factors other than the fluctuation of the process data can be confirmed (for example, the pipe heater is rewound by a pipe exchange or a cleaning operation).

Further, according to the present embodiment, it is possible to efficiently perform an anomaly analysis even if the skill is a low maintenance source, because the data analysis is troublesome and the time-consuming trouble analysis is performed, thereby reducing the downtime when the trouble occurs.

The substrate processing apparatus 100 in the embodiment of the present invention is applicable not only to a semiconductor manufacturing apparatus for manufacturing semiconductors but also to an apparatus for processing a glass substrate such as an LCD (Liquid Crystal Display) apparatus. Needless to say, the present invention is also applicable to various substrate processing apparatuses such as an exposure apparatus, a lithographic apparatus, a coating apparatus, and a plasma processing apparatus.

1: substrate processing device 215: device management controller
215e: Device status monitoring unit 215h:
227: Operation display section (display section) 321: Main controller (control section).

Claims (14)

A piping heater for heating the gas piping;
A temperature detector installed in the pipe heater for detecting a temperature of the gas pipe;
A control unit for controlling the temperature of the gas piping while outputting device data representing power based on device data indicating the temperature acquired from the temperature detection unit to the piping heater;
A device data type set for detecting an abnormality of the item, a statistic amount calculated from device data corresponding to the device data type, and a device data for calculating the statistic amount are collected And a monitoring table in which a rule for diagnosing an abnormality of the device data is respectively defined; And
A device status monitoring unit for storing the statistic amounts calculated from device data corresponding to the device data type in the storage unit,
And,
Wherein the device status monitoring unit acquires device data representing the temperature and device data representing the power from the collected device data while collecting device data transmitted from the control unit, And comparing the statistic amount calculated in the period defined in the monitoring table of the apparatus data representing the temperature with the statistical amount of the apparatus data indicating the temperature calculated last stored in the storage unit, A statistic amount of the statistical amount calculated in the period defined in the monitoring table of the device data indicating the power when the variation of the statistic amount matches the reference value and a statistic amount of the device data indicating the power calculated last stored in the storage unit Compare and compare And monitor whether the variation of the statistic amount is within a threshold value. The method according to claim 1,
Wherein the device status monitoring unit is configured to determine that the variation of the statistical quantity of the device data indicating the power is larger than the reference value if the variation of the statistical quantity of the device data indicating the temperature is larger than the reference value, And stores the statistical amount of the data in the storage unit. The method according to claim 1,
Wherein the control unit transmits to the storage unit device data reported from each component during execution while executing a process recipe including a plurality of steps, the device state monitoring unit, when the period defined in the monitoring table starts, And acquire device data corresponding to the device data type defined in the monitoring table. The method of claim 3,
Wherein the device status monitoring unit is configured to calculate a statistic amount defined in the monitoring table from the acquired device data when the period defined in the monitoring table ends. 5. The method of claim 4,
Wherein the apparatus state monitoring unit acquires a statistic amount defined in the previously calculated monitoring table stored in the storage unit, compares the obtained statistic amount with a statistic amount defined in the monitoring table calculated this time, The substrate processing apparatus comprising: The method according to claim 1,
Wherein the control unit further comprises a display unit for displaying device status monitoring result data as a result of monitoring by the device status monitoring unit,
Wherein the device status monitoring unit is configured to display the device status monitoring result data on the display unit when the variation in the statistical amount of the device data indicating the power is larger than the threshold value. The method according to claim 1,
Wherein the apparatus data type set for detecting an abnormality of the item indicating the predetermined abnormal phenomenon includes a combination of apparatus data not related to the item indicating the abnormal phenomenon and apparatus data related to the item indicating the abnormal phenomenon, Device. 8. The method of claim 7,
Wherein the apparatus state monitoring unit monitors the state of the apparatus data related to the item indicating the abnormal state when the variation of the statistic amount calculated in the period of the apparatus data not related to the item indicating the abnormal phenomenon is equal to or smaller than the reference value And monitor whether the variation of the statistic is below a threshold value. 8. The method of claim 7,
Further comprising a display unit for displaying a result monitored by the device status monitoring unit,
Wherein the apparatus state monitoring unit is configured to display an icon indicating the occurrence of the predetermined abnormal phenomenon on the display unit when the difference between batch processing of the statistic amount of the apparatus data related to the item indicating the abnormal phenomenon is larger than a threshold value / RTI > 8. The method of claim 7,
The apparatus state monitoring unit may judge a variation of the statistic amount of the apparatus data related to the item indicating the abnormal phenomenon when the difference between batch processing of the statistic amount of the apparatus data not related to the item indicating the abnormal phenomenon is larger than the reference value The substrate processing apparatus comprising: 10. The method of claim 9,
Further comprising an abnormality analysis support section for obtaining the device data from the storage section based on various kinds of information defined in the monitoring table when the predetermined abnormal phenomenon occurs,
The abnormality analysis support section searches the storage section for the device data type defined in the monitoring table by executing the data analysis program when the icon is pressed down and displays device data corresponding to the device data type Wherein the control unit is configured to acquire a predetermined number of times of batch processing and to display on the display unit to return to the past from the time when the present batch process is executed. 12. The method of claim 11,
Wherein the abnormality analysis support section searches the production history information in the storage section and displays event data on the display section. A piping heater for heating the gas piping;
A temperature detector installed in the pipe heater and detecting the temperature of the gas pipe;
A control unit for controlling the temperature of the gas piping while outputting device data representing power based on device data indicating the temperature acquired from the temperature detection unit to the piping heater;
A device data type set for detecting an abnormality of the item, a statistic amount calculated from device data corresponding to the device data type, and a device data for calculating the statistic amount are collected And a monitoring table in which a rule for diagnosing an abnormality of the device data is respectively defined; And
A device status monitoring unit for storing the statistic amounts calculated from device data corresponding to the device data type in the storage unit,
A monitoring program stored in the recording medium,
Acquiring device data representing the temperature and device data representing the power from the collected device data while collecting device data transmitted from the control unit;
A step of calculating a statistic amount of data;
Wherein the statistical amount calculated in the period defined in the monitoring table of the apparatus data indicating the temperature is compared with the statistical amount of the apparatus data indicating the temperature calculated last stored in the storage unit, And comparing the statistic amount calculated in the period defined in the monitoring table of the device data representing the power with the statistic amount of the device data indicating the power calculated last time stored in the storage unit; And
A step of determining a change in the statistic amount compared with a threshold value;
To the substrate processing apparatus. A processing step of processing the substrate by executing the process recipe and controlling the temperature of the gas piping while outputting device data representing power based on the device data indicating the temperature of the gas piping to the piping heater; And
A device data type set for detecting an abnormality of the item, a statistic amount calculated from device data corresponding to the device data type, and a device data for calculating the statistic amount are collected An accumulation step of accumulating apparatus data generated in the processing step in a storage unit that at least stores a monitoring table in which a period for defining the period of time during which the apparatus data is diagnosed and a rule for diagnosing the abnormality of the apparatus data are respectively defined;
A method of manufacturing a semiconductor device,
Acquiring device data representing the temperature and device data representing the power from the device data stored in the storage unit in the storing step;
Calculating a statistic amount of device data representing the acquired temperature and device data representing the power;
Wherein the statistical amount calculated in the period defined in the monitoring table of the apparatus data indicating the temperature is compared with the statistical amount of the apparatus data indicating the temperature calculated last stored in the storage unit, Comparing the statistic amount calculated in the period defined in the monitoring table of the device data representing the power with the statistical amount of the device data indicating the power calculated last time stored in the storage unit; And
Determining whether a change in the statistic amount compared is within a threshold value;
Further comprising the steps of:

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