KR20180033053A - Sensor device - Google Patents

Abstract

An objective of the present invention is to provide a sensor apparatus, capable of obtaining more accurate measurement results for each sensor of a plurality of types of sensors even when environmental conditions are changed. The present invention comprises: a plurality of sensor cells each including a sensor and an active element and arranged two-dimensionally, the plurality of sensors including a plurality of different kinds of sensors; and a compensating process unit for compensating for a measurement result of one kind of sensor among the plurality of kinds of sensors by using measurement results of different kinds of sensors among the plurality of kinds of sensors.

Description

[0001]

The present invention relates to a sensor device having a plurality of kinds of sensors.

As a conventional thin-film tactile sensor, there is known a composite device comprising a thin film of a temperature detecting material and a thin film of a deformation detecting material formed by arranging or laminating a film on an insulating film or the like (Patent Document 1).

There is also known a detecting device having an array of cells including sensors such as pressure sensors (Patent Document 2). The detection device described in Patent Document 2 has an array of cells, and each cell of the array has a sensor such as a pressure sensor and a temperature sensor, and an organic transistor having a switching function connected to the sensor.

Patent Document 1: Japanese Patent Application Laid-Open No. 2002-048607 Patent Document 2: JP-A-2005-150146

Devices having pressure sensors, temperature sensors, etc. are assumed to be used in various use opportunities where environmental conditions such as pressure, temperature, humidity, acceleration, and deformation are different. In the case of a sensor device having a plurality of different types of sensors whose measurement amounts are different from each other, it is difficult to obtain accurate measurement results for each sensor of a plurality of types of sensors because the output of the sensor also fluctuates when environmental conditions change.

It is an object of the present invention to provide a sensor device capable of obtaining more accurate measurement results for each sensor of a plurality of types of sensors even when environmental conditions are changed.

According to an aspect of the present invention, there is provided a plurality of sensor cells each including a sensor and an active element and arranged two-dimensionally, wherein the plurality of sensors include a plurality of sensor cells including a plurality of different types of sensors, There is provided a sensor device comprising a compensation processing section for compensating measurement results of one kind of sensor among a plurality of types of sensors by using measurement results of different kinds of sensors among the plurality of kinds of sensors.

According to the present invention, it is possible to obtain more accurate measurement results for each sensor of a plurality of types of sensors even when environmental conditions are changed.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic view showing an overall structure of a sensor device according to an embodiment of the present invention; FIG.
2 is a schematic view showing an example of arrangement of sensor cells including a plurality of different types of sensors in a sensor device according to an embodiment of the present invention.
3 is a schematic view showing the structure of a sensor cell including a pressure sensor in a sensor device according to an embodiment of the present invention.
4 is a graph showing an example of the temperature dependency of the output of the resistance change type pressure sensor using the conductive rubber.
5 is a graph showing an example of the temperature dependency of the output of the capacitance-change type humidity sensor using the polymer membrane.
6 is a view for explaining an interpolation process in the sensor device according to the embodiment of the present invention.
7 is a schematic view showing another example of the sensor array and its constituent units according to the modified embodiment of the present invention.

<Embodiment>

A sensor device according to an embodiment of the present invention will be described with reference to Figs. 1 to 7. Fig.

First, the configuration of the sensor device according to the present embodiment will be described with reference to Figs. 1 to 3. Fig. 1 is a schematic view showing an overall structure of a sensor device according to the present embodiment. 2 is a schematic view showing an example of arrangement of sensor cells including a plurality of different types of sensors in the sensor device according to the present embodiment. 3 is a schematic view showing the structure of a sensor cell including a pressure sensor in the sensor device according to the present embodiment.

The sensor device 100 according to the present embodiment is a two-dimensional sensor having a sensor array 10, a vertical scanning circuit 20, a detection circuit 30 and a control unit 40 as shown in Fig.

The sensor array 10 includes a plurality of sensor cells 12 arranged in two dimensions over a plurality of rows (for example, m rows) and a plurality of columns (for example, n columns). Each of m and n is an integer of 2 or more. In the sensor array 10, the plurality of sensor cells 12 are arranged in a rectangular lattice pattern, for example, a tetragonal lattice pattern.

Each sensor cell 12 includes a selection transistor M and a sensor S. The selection transistor M is, for example, a thin film transistor. The sensor S is any one of a pressure sensor to measure pressure, a temperature sensor to measure temperature, and a humidity sensor to measure humidity. The sensor device 100 according to the present embodiment is an active matrix drive type two-dimensional sensor in which the selection transistor M is an active element. By using the selection transistor M made of a thin film transistor as an active element, it becomes possible to easily mount a plurality of kinds of sensors.

The sensor array 10 includes a sensor cell 12 including a plurality of types of sensors S having different measurement amounts to be measured. That is, the sensor array 10 includes a sensor cell 12 including a pressure sensor as a sensor S, a sensor cell 12 including a temperature sensor as a sensor S, And a sensor cell 12 including the sensor cell 12. Hereinafter, a sensor cell 12 including a pressure sensor as a sensor S, a sensor cell 12 including a temperature sensor as a sensor S, and a sensor cell 12 including a humidity sensor as a sensor S 12 are denoted by a sensor cell 12P, a sensor cell 12T, and a sensor cell 12H, respectively.

As the pressure sensor, for example, a resistance change type pressure sensor using a change in electric resistance value accompanying a pressure change can be used. As the temperature sensor, for example, a resistance change type temperature sensor using a change in electric resistance value accompanying a temperature change can be used. As the humidity sensor, for example, a resistance change type humidity sensor using a change in electrical resistance value accompanying a humidity change can be used. Further, the sensors used as the sensor S are not limited to these, and sensors based on various measurement principles such as a capacitance change type pressure sensor, a temperature sensor, and a humidity sensor using a change in capacitance value can be used. In Fig. 1, the sensor S is represented by a variable resistance symbol for the sake of convenience.

Fig. 2 shows an example of the arrangement of the sensor cells 12P, 12T and 12H in the sensor array 10. Fig. As shown in Fig. 2, a sensor cell 12P including a temperature sensor and a sensor cell 12P including a pressure sensor can be disposed around a sensor cell 12H including a humidity sensor. The arrangement positions of the other plural kinds of sensor cells 12P, 12T, 12H are not limited to this, but can be appropriately set in accordance with the purpose of use of the sensor device 100 or the like.

As shown in Fig. 1, in each row of the sensor array 10, a driving signal line X is arranged extending in the row direction. 1, the first row, second row, the third row, the fourth row, the fifth row, ..., the a drive signal line (X) arranged in m rows, each drive signal line X _1, X _2, X ₃ , X ₄ , X ₅ , ..., X _m . The driving signal lines X ₁ , X ₂ , X ₃ , X ₄ , X ₅ , ..., X _m are connected to the vertical scanning circuit 20.

In each column of the sensor array 10, output signal lines Y extend in the column direction. 1, the first column, second column, third column, ..., the n of the output signal (Y), the output signal lines _{Y 1, Y 2, Y 3} , ... arranged columns, denoted by Y _n . The output signal lines Y ₁ , Y ₂ , Y ₃ , ..., Y _n are connected to the detection circuit 30.

The sensor S of the sensor cell 12 has one terminal connected to the power source voltage line and the other terminal connected to the drain electrode of the selection transistor M. [ The source electrode of the selection transistor M is connected to the output signal line Y of the corresponding column. The gate electrode of the selection transistor M is connected to the drive signal line X of the corresponding row.

The vertical scanning circuit 20 is composed of a decoder and a shift register. The vertical scanning circuit 20, drive signal lines (X _1, X _2, X _3, X _4, X _5, ..., X _m), the drive signal (PTX _{1, 2} PTX, PTX _{3, 4} PTX, PTX ₅ , ..., PTX _m ). These driving signals PTX are driving signals of the selection transistors M connected to the driving signal lines X. In this sense, the vertical scanning circuit 20 is also a driving circuit for the selection transistor M. For example, when the selection transistor M is an N-type transistor, when the driving signal PTX is at a high level, the selection transistor M of the corresponding row is turned ON. When the driving signal PTX is at the low level, the selection transistor M of the corresponding row is turned off.

The detection circuit 30 detects the voltages of the output signal lines Y ₁ , Y ₂ , Y ₃ , ..., Y _n and detects the output of the electric resistance value and the capacitance value of the sensor S . It is possible to calculate the pressure, the temperature or the humidity value which is the measurement value by the sensor S based on the output of the electric resistance value and the capacitance value of the sensor S detected by the detection circuit 30. [

The control unit 40 is connected to the vertical scanning circuit 20 and the detection circuit 30. The control unit 40 has a CPU for executing various operations such as calculation, control, and determination. The control unit 40 also has a ROM for storing various programs executed by the CPU, a database referred to by the CPU, and the like. The control unit 40 also has a RAM for temporarily storing the data being processed and input data by the CPU.

The control unit 40 controls the operations of the vertical scanning circuit 20 and the detection circuit 30 and their timings by the CPU executing the program. In addition, the control unit 40 functions as a compensation processing unit for mutually compensating measurement results by sensors including a plurality of kinds of sensors, as described later, by executing a program by the CPU. The control unit 40 also functions as an interpolation processing unit that interpolates a measurement amount to be measured by another sensor that can not be measured by the sensor included in the sensor cell, as will be described later, by executing the program by the CPU.

Here, an example of the structure of the sensor cell 12 will be described with reference to FIG. 3A is a plan view showing an example of the structure of the sensor cell 12 connected to the drive signal line X and the output signal line Y. FIG. 3 (b) is an enlarged cross-sectional view taken along the line A-B of Fig. 3 (a). 3 (a) and 3 (b) show an example of the structure of the sensor cell 12P including the pressure sensor SP as the sensor S. As shown in Fig.

3 (a) and 3 (b), a gate electrode 62 of the selection transistor M is formed on the substrate 60. [ On the substrate 60, a drive signal line X is formed. The gate electrode 62 is formed integrally with the drive signal line X and is electrically connected to the drive signal line X. [ The substrate 60 also includes a sheet-like member and a film-like member in addition to the substrate-like member, and any material can be used as the material. Further, the substrate 60 may be flexible, flexible, or hard, having no flexibility.

On the gate electrode 62, a gate insulating layer 64 is formed. The gate insulating layer 64 is also formed on the driving signal line X and the substrate 60, and also functions as an interlayer insulating layer. 3 (a), the gate insulating layer 64 is omitted.

On the gate insulating layer 64, a source electrode 66S and a drain electrode 66D of the selection transistor M are formed in parallel with an interval therebetween. On the gate insulating layer 64, an output signal line Y is formed. On the gate insulating layer 64, a pair of electrodes 68 and 70 of a pressure sensor SP are formed in parallel with an interval therebetween. Further, on the gate insulating layer 64, a power source voltage line 72 is formed. The source electrode 66S is formed integrally with the output signal line Y and is electrically connected to the output signal line Y. [ The drain electrode 66D is integrally formed with the electrode 68 and is electrically connected to the electrode 68. [ The electrode 70 is integrally formed with the power source voltage line 72 and is electrically connected to the power source voltage line 72.

A source electrode 66S and a drain electrode 66D are formed on the region including the source electrode 66S and the drain electrode 66D of the gate insulating layer 64 so as to cover the source electrode 66S and the drain electrode 66D, The semiconductor layer 80 is formed.

A sensor layer 82 is formed on the region including the pair of electrodes 68 and 70 of the gate insulating layer 64 so as to cover the pair of electrodes 68 and 70 and to be in contact with the pair of electrodes 68 and 70, Is formed. The material constituting the sensor layer 82 is a pressure-sensitive conductive material, for example, a resin in which conductive particles are dispersed, the electrical resistance value of which changes with the application of pressure, and more specifically, for example, a pressure-sensitive conductive rubber.

A selection transistor M having a gate electrode 62, a source electrode 66S and a drain electrode 66D is formed on the substrate 60 in this way. A pressure sensor SP having a pair of electrodes 68 and 70 and a sensor layer 82 is formed on the substrate 60. The electrodes 68 and 70 are electrically connected to the sensor layer 82 and to the sensor layer 82, respectively. A protective film or the like is formed on the substrate 60 on which the selection transistor M and the pressure sensor SP are formed.

3 (a) and 3 (b), the sensor cell 12P including the pressure sensor SP has been described. However, by making the constituent material of the sensor layer 82 a temperature-measuring resistor or the like, It is possible to configure the sensor cell 12T. Further, the sensor cell 12H including the humidity sensor can be constructed by using the constituent material of the sensor layer 82 as a moisture-sensitive material such as a polymer material.

Since the pressure sensor, the temperature sensor, and the humidity sensor used in the sensor device 100 according to the present embodiment each have a dependency on the environmental condition, there is a case where the output, which is the output, . In addition, an error may be included in the output due to the characteristic change of the selection transistor M formed together with each sensor.

4 is a graph showing an example of the temperature dependence of the output of the resistance change type pressure sensor using the conductive rubber. In the graph shown in Fig. 4, the axis of abscissas represents the temperature, and the axis of ordinates represents the major axis of the electric resistance, which is the output of the pressure sensor, in arbitrary units.

As shown in Fig. 4, in all cases where a pressure of 8.8 gf / cm ² , 11.3 gf / cm ² , and 15.9 gf / cm ² is applied to the temperature sensor, the electric resistance value, which is the output of the pressure sensor, The more the temperature dependency is shown.

5 is a graph showing an example of the temperature dependency of the output of the capacitance-change type humidity sensor using the polymer membrane. In the graph shown in Fig. 5, the horizontal axis represents the temperature, and the vertical axis represents the capacitance, which is the output of the humidity sensor, in arbitrary units.

As shown in FIG. 5, the capacitance value which is the output of the humidity sensor in any of the relative humidity of 20%, 40%, 60%, and 80% of the environment in which the humidity sensor is placed becomes larger as the temperature becomes higher .

In this way, the output of a certain sensor may show a dependency on an environmental condition to be measured by another sensor. Therefore, accurate measurement by each sensor is difficult without considering such dependence.

In the sensor device 100 according to the present embodiment, the control section 40 functioning as the compensation processing section measures the plurality of sensor cells 12 in the sensor array 10 The results are mutually compensated to realize more accurate measurement results. Hereinafter, mutual compensation principle by the control unit 40 will be described in detail.

P ₁ is a pressure measurement value which is a measurement value of the pressure measured by the pressure sensor included in the sensor cell 12P. Also, a temperature measurement value which is a measurement value of the temperature measured by the temperature sensor included in the sensor cell 12T is T ₁ . In addition, the measurement of the humidity measurement of the humidity measured by the humidity sensor included in the sensor cell (12H) to the H _1. The actual pressure value, which is the actual pressure value to be measured by the pressure sensor, is P _o . The actual pressure value P _O is obtained by compensating the pressure measurement value P ₁ using the temperature measurement value T ₁ and the humidity measurement value H ₁ . Also, the room temperature value, which is the actual temperature value to be measured by the temperature sensor, is T _o . The room temperature value T _O is obtained by compensating the temperature measurement value T ₁ by using the pressure measurement value P ₁ and the humidity measurement value H ₁ . Also, the actual humidity value to be measured by the humidity sensor is H _O. The exercise value H _O is obtained by compensating the humidity measurement value H ₁ using the pressure measurement value P ₁ and the temperature measurement value T ₁ .

Also, the combination of the positions and numbers of the sensor cells 12P, 12T, and 12H that perform the mutual compensation of the measurement results by the sensor S is not particularly limited, but may be appropriately set. For example, in the arrangement of the sensor cells 12P, 12T, 12H shown in FIG. 2, mutual compensation is performed for any one of the ten sensor cells 12P and one sensor cell 12T, 12H Can be performed.

The pressure sensor can be regarded as having a dependence shown by the following equations for the temperature (T) and the humidity (H), respectively. Further,? P represents the difference between the actual pressure value minus the measured value of the pressure by the pressure sensor.

ΔP = A ₁ (T)

ΔP = B ₁ (H)

Further, the temperature sensor can be regarded as having the dependence shown by the following equations for the pressure P and the humidity H, respectively. DELTA T represents the difference between the actual temperature value and the measured value of the temperature sensor.

ΔT = A ₂ (P)

? T = C ₁ (H)

Further, the humidity sensor can be regarded as having the dependence shown by the following equations for the pressure P and the temperature T, respectively. DELTA H represents the difference between the actual humidity value and the humidity value measured by the humidity sensor, minus the measured humidity value.

ΔH = B ₂ (P)

ΔH = C ₂ (T)

The functions A ₁ , A ₂ , B ₁ , B ₂ , C ₁ and C ₂ expressing the dependency can be determined in advance using experiment values, simulation values, and the like.

Each sensor is influenced by environmental conditions other than the environmental condition to be measured. For example, with respect to the pressure sensor, the pressure measurement value P ₁ is different from the actual pressure value P ₀ as a result of being influenced by temperature and humidity, which are environmental conditions other than pressure. The difference between the actual pressure value (P _O ) and the pressure measurement value (P ₁ ) is regarded as the total amount of temperature and humidity influences, and can be expressed by the following equation (1)

P _O -P ₁ = A ₁ (T ₀ ) + B ₁ (H 2 _O )

Similarly, for the temperature sensor and the humidity sensor, the following equations 2 and 3 can be obtained, respectively.

T _{O -} T ₁ = A ₂ (P ₀ ) + C ₁ (H 2 _O )

H _O -H ₁ = B ₂ (P ₀ ) + C ₂ (T ₀ )

As described above, the functions A ₁ , A ₂ , B ₁ , B ₂ , C _1, and C ₂ can be predetermined. P ₁ , T ₁ , and H ₁ are measured values measured by the respective sensors. Therefore, the above equations (1), (2) and (3) are triplet simultaneous equations with P _O , T _O and H _O as unknowns. P _O , T _O and H _O can be calculated by subtracting the three-way simultaneous equations of Equations 1, 2 and 3.

In addition, when the functions A ₁ , A ₂ , B ₁ , B ₂ , C ₁ and C ₂ are both in a linear relationship, the above-mentioned equations 1, 2 and 3 are expressed by the following equations 4, 5 and 6, respectively. In Equation (4), Equation (5) and Equation (6), A ₁ , A ₂ , B ₁ , B ₂ , C ₁ and C ₂ are coefficients.

P _O -P ₁ = A ₁ · T _O + B ₁ · H 2 _O (4)

T _O -T ₁ = A ₂揃 P _O + C ₁揃 H _O (5)

H _{O -} H ₁ = B ₂ · P _O + C ₂ · T _O (6)

By taking the three-way simultaneous equations of the above-mentioned equations 4, 5 and 6, P _O , T _O and H _O expressed by the following equations 7, 8 and 9 are obtained, respectively.

(식 7)

(Equation 7)

(식 8)

(Expression 8)

(식 9)

(Equation 9)

The control unit 40 serving as the compensation processing unit performs compensation processing for mutually compensating the pressure measurement value P ₁ , the temperature measurement value T ₁ and the humidity measurement value H ₁ based on the above-described principle , The actual pressure value (P _O ), the room temperature value (T _O ), and the practical humidity value (H _O ). Thus, the sensor device 100 according to the present embodiment can obtain more accurate measurement results for each sensor of the pressure sensor, the temperature sensor, and the humidity sensor, which are a plurality of types of sensors, even when the environmental conditions are changed.

In addition, dependency on some environmental conditions may be ignored for each sensor, for example, by appropriately selecting a sensor material or studying the arrangement position of the sensor cell. For example, the humidity dependence of the pressure sensor can be ignored by appropriately selecting the sensor material. In addition, the temperature dependency of the temperature sensor can be neglected by appropriately selecting the material. Further, by studying the arrangement position of the sensor cell with respect to the temperature sensor, the pressure dependence can be neglected. Further, by studying the arrangement position of the sensor cell with respect to the humidity sensor, the pressure dependence can be ignored. When satisfying these conditions, the equation (4), can be in the equations 5 and 6 as _{B 1 = 0, A 2 =} 0, C 1 = 0, B 2 = 0, therefore the following P _O, T _O, and H 2 _O is obtained.

P _O = P ₁ + A ₁ · T ₁ (7 ')

T _O = T ₁ (8 ')

H _O = H ₁ + C ₂ · T ₁ (9 ')

Further, in the sensor array 10, a sensor cell 12 including a plurality of other types of sensors, i.e., a pressure sensor, a temperature sensor, and a humidity sensor is disposed. Therefore, the sensor cell 12 including a certain sensor can not directly measure a measurement amount to be measured by another sensor. For example, the sensor cell 12P including the pressure sensor can not directly measure temperature and humidity.

In the sensor device 100 according to the present embodiment, the control unit 40 also functions as an interpolation processing unit that interpolates a measurement amount to be measured by another sensor that can not be measured by the sensor included in the sensor cell 12 . Hereinafter, the interpolation processing of the control unit 40 as the interpolation processing unit will be described with reference to FIG. 6, taking as an example the case of interpolating the temperature measured by the temperature sensor.

6 (a) shows an example of arrangement of the sensor cells 12 in the sensor array 10 of 5 rows and 5 columns having rows R1 to R5 and columns C1 to C5. Hereinafter, it is assumed that the position of the sensor cell 12 is represented by (Rm, Cn) notation with the row number and the column number. Each of m and n is an integer of 1 or more and 5 or less.

As shown in Fig. 6 (a), at the positions of the four corners R1, C1, R1, C5, R5, C1 and R5, C5 in the sensor array 10, A sensor cell 12T including a sensor cell 12T is disposed. On the other hand, sensor cells 12P including pressure sensors are disposed at positions other than these.

6 (b) shows an example of temperature measurement values in each sensor cell of the sensor array 10 shown in Fig. 6 (a). At the positions of (R1, C1), (R1, C5), (R5, C1) and (R5, C5) as shown in Fig. 6 (b), by the sensor cell 12T including the temperature sensor, Temperature measurements of 25 ° C, 30 ° C, 40 ° C and 45 ° C, respectively, were obtained. On the other hand, at the positions other than these, the temperature measurement value can not be obtained because the sensor cell 12P including the pressure sensor is disposed.

The control unit 40 serving as the interpolation processing unit calculates the amount of measurement of the sensor cell 12 in which the measurement value is not obtained for the measurement amount based on the measurement value of the sensor cell 12 from which the measurement value is obtained Interpolate the value. The method of interpolating the value of the measured amount is not particularly limited. For example, the control unit 40 interpolates the value of the measured amount by using the shape function of the isoparametric element in the finite element method.

6 (b), the control unit 40 as the interpolation processing unit calculates the temperature of the position of the four-node point (R1, C1), (R1, C5), (R5, C1) Based on the measured values, the temperature values at other positions are interpolated using the shape function of the isoparametric element. Fig. 6 (c) shows the result of interpolating the temperature values at positions other than the positions of the four nodal points based on the temperature measurement values shown in Fig. 6 (b). Further, the number of measurement quantities used for interpolation and the position of the nodal points in the sensor array 10 are not particularly limited, but can be appropriately set in accordance with the measurement quantity to be interpolated and the like.

The control unit 40 serving as the interpolation processing unit interpolates the values of the measurement amounts to be measured by the sensor cells 12 other than the sensor cell 12 with respect to each sensor cell 12. [ Furthermore, the control unit 40 as the compensation processing unit executes the compensation processing for mutually compensating the measurement results of the different types of sensors S as described above by using the values of the respective measured quantities interpolated as described above .

As described above, according to the present embodiment, it is possible to obtain more accurate measurement results for each sensor of a plurality of types of sensors even when environmental conditions are changed.

<Modified Embodiment>

The present invention is not limited to the above-described embodiment, and various modifications are possible.

For example, in the above embodiment, the case where the sensor S included in the sensor cell 12 is a pressure sensor, a temperature sensor, and a humidity sensor has been described as an example, but the type of the sensor S is not limited thereto. The sensor S may be a displacement sensor for measuring the amount of displacement, an acceleration sensor for measuring acceleration, or a sensor for detecting contact and proximity of the object.

Further, in the above embodiment, the case of a plurality of types of sensors having different measurement amounts to be measured has been described as an example, but the present invention is not limited thereto. A plurality of sensors having different measurement performances such as a measurement range, a sensitivity, or a resolution are included in a plurality of different types of sensors even if the measurement amounts to be measured are the same. In addition, the measurement quantity to be measured may be mixed with other sensors and sensors having different measurement performances.

In the above embodiment, the arrangement of the sensor cell 12 shown in Fig. 2 has been described as an example. However, the arrangement of the sensor cell 12 is not limited to this. Hereinafter, another example of the sensor array will be described with reference to FIG. 7 (a) is a schematic view showing another example of the sensor array. Fig. 7 (b) is a schematic view showing the constituent units in the sensor array shown in Fig. 7 (a).

As shown in Fig. 7A, the sensor array 110 is divided into a plurality of constituent units 110U. The constituent unit 110U is constituted by a plurality of sensor cells. As shown in Fig. 7B, the constituent unit 110U includes, for example, a sensor cell 112T including a temperature sensor and a sensor for measuring mechanical information And a plurality of sensor cells 112M included therein. Examples of the mechanical information sensor included in the sensor cell 112M include a pressure sensor, a displacement sensor, an acceleration sensor, and a sensor for sensing proximity to and proximity to an object.

In general, when the spatial distribution of the object temperature and the spatial distribution of the mechanical information such as the shape and the hardness are compared, the spatial distribution of the mechanical information is often given useful information by improving the resolution. As an example, it is known that the spatial resolution of temperature stimuli in human hands is significantly lowered compared to the spatial resolution of mechanical stimuli (see, for example, Makoto Shimozoo et al., 'Tactile Recognition Mechanism and Applied Technology - Tactile Display - ', Supplement, S & T Publishing, March 2014, p.10 and p.94). On the other hand, the interpolation of the surface elements is preferably carried out in an area surrounded by the nodal points of the corners.

As described above, the structural unit 110U preferably includes four sensor cells 112T including a temperature sensor disposed at four corners in an array of a plurality of rows and a plurality of columns, and a plurality of Lt; RTI ID = 0.0 &gt; 112M &lt; / RTI &gt;

Further, in the plurality of constituent units 110U of the sensor array 110, a plurality of sensor cells including a plurality of different types of sensors may be arranged in the same or different arrangement. The plurality of constituent units 110U of the sensor array 110 may include the same sensor cell or may include other sensor cells. The shape of the constituent unit 110U region can be not only a rectangular shape as shown in Fig. 7 (a) and Fig. 7 (b) but also various shapes. The dimensions of the sensor cells may be the same or different. Even if the dimensions are different, the compensation processing and the interpolation processing can be performed in the same way as in the above embodiment by acquiring information on the coordinate position of the sensor cell in advance.

In the above embodiment, the case where the selection transistor M such as a thin film transistor is used as an active element has been described as an example, but the present invention is not limited thereto. Other active elements such as a metal insulator metal (MIM) diode may be used in place of the selection transistor M. [ Each sensor cell may be provided with a device having memory property. The detection circuit 30 may obtain the outputs of the output signal lines Y ₁ , Y ₂ , Y ₃ , ..., Y _n by a method other than the current equal voltage, for example.

In the above embodiment, the case where the plurality of sensor cells 12 are arranged in a rectangular lattice pattern in the sensor array 10 has been described as an example, but the present invention is not limited thereto. The plurality of sensor cells 12 can be arranged two-dimensionally regularly or irregularly.

10: sensor array 12, 12H, 12P, 12T: sensor cell
20: vertical scanning circuit 30: detection circuit
40: control unit 100: sensor device
110: Sensor array 110U: Configuration unit
112M, 112T: sensor cell M: selection transistor
S: Sensor

Claims (10)

A plurality of sensor cells each including a sensor and an active element and arranged two-dimensionally, wherein the plurality of sensors include a plurality of sensor cells including a plurality of different kinds of sensors,
And a compensation processing unit for compensating measurement results of one kind of sensor among the plurality of types of sensors by using measurement results of different kinds of sensors among the plural kinds of sensors.
The method of claim 1, wherein
Wherein the compensation processing unit mutually compensates measurement results of the plurality of types of sensors.
The method according to claim 1 or 2, wherein
Wherein the plurality of types of sensors include sensors different in the amount of measurement to be measured.
4. The method according to any one of claims 1 to 3, wherein
Wherein the plurality of types of sensors include sensors having different measurement performances.
The method according to any one of claims 1 to 4, wherein
Wherein the sensor of the plurality of sensor cells is at least one of a pressure sensor, a temperature sensor and a humidity sensor.
The method according to any one of claims 1 to 5, wherein
Wherein the plurality of types of sensors include a pressure sensor, a temperature sensor, and a humidity sensor,
Wherein the compensation processing unit compensates the measurement result of the pressure sensor using the measurement result of the temperature sensor and compensates the measurement result of the humidity sensor by using the measurement result of the temperature sensor.
The method of claim 6, wherein
Wherein the compensation processing unit compensates the measurement result of the pressure sensor using the measurement result of the temperature sensor and the measurement result of the humidity sensor and outputs the measurement result of the temperature sensor to the humidity sensor And compensates the measurement result of the humidity sensor by using the measurement result of the pressure sensor and the measurement result of the temperature sensor.
8. The method according to any one of claims 1 to 7
Wherein the pressure sensor is a resistance change type pressure sensor.
The method according to any one of claims 1 to 8, wherein
And an interpolation processing unit for interpolating measurement results of the plurality of types of sensors.
10. A compound according to any one of claims 1 to 9
Wherein the active element is a thin film transistor.

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