KR20180022310A - Compact light emitting diode chip and light emitting device including the same - Google Patents

Abstract

A light emitting diode chip, a light emitting device, and an application thereof are provided. The light emitting diode chip according to an embodiment of the present invention includes: a substrate; a first conductive semiconductor layer arranged on the substrate; a mesa arranged on the first conductive semiconductor layer and including an active layer and a second conductive semiconductor layer; an insulating layer covering the first conductive semiconductor layer and the mesa and including at least one first opening exposing the first conductive semiconductor layer and a second opening located on the upper side of the mesa; a first pad electrode arranged on the upper side of the insulating layer and electrically connected to the first conductive semiconductor layer through the first opening; and a second pad electrode arranged on the upper side of the insulating layer and electrically connected to the second conductive semiconductor layer through the second opening, wherein the first opening of the insulating layer includes a first region covered with the first pad electrode and a second region exposed to the outside of the first pad electrode. Accordingly, the present invention can improve luminous efficiency and durability.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a compact light emitting diode chip and a light emitting device including the same. BACKGROUND OF THE INVENTION [0002]

The present invention relates to a small-sized light emitting diode chip and a light emitting device including the same.

Light emitting diodes are used in various products such as large backlight units (BLU), general lighting and electric field, and they are also widely used in small household appliances and interior products.

The light emitting diode can be used for various purposes such as a purpose of transmitting a meaning, a sense of beauty, in addition to being used simply as a light source. Therefore, there is a demand for design freedom of products using light emitting diodes. For example, it is necessary to freely change the shape of a product by mounting a light emitting diode on a flexible printed circuit board (FPCB). Particularly, there is a demand for a product which can freely change the shape according to the needs of the consumer.

However, since the light emitting diode is made of, for example, a gallium nitride single crystal semiconductor, it is impossible to change the shape of the light emitting diode. However, if a compact light emitting diode is mounted on a flexible printed circuit board or the like, a product free from deformation can be manufactured. Therefore, miniaturization of light emitting diodes is required for manufacturing deformable products.

On the other hand, most light emitting diodes are generally mounted on leads using solder. When the light emitting diode is mounted using the solder, tilting of the light emitting diode tends to occur due to the fluidity of the solder. In order to solve such a problem, it is possible to form a groove in the lead to prevent the light emitting diode from being distorted by the solder. However, it is difficult to form a groove on a lead such as a flexible FPCB or the like on a substrate, and when a groove is formed in the lead, the lead is easily broken in deforming the shape of the product, Occurs. Furthermore, when small-sized light emitting diodes are arranged at narrow intervals, reliability is further reduced as grooves are formed in many portions of the leads.

Therefore, there is a demand for development of a light emitting diode chip and a light emitting device which are capable of securing a degree of design freedom, ensuring durability suitable for various do persons, and preventing deviation.

A problem to be solved by the present invention is to provide a light emitting diode chip having high luminous efficiency and high manufacturing yield while minimizing the area and thickness.

Another object of the present invention is to provide a flip chip type light emitting diode chip capable of reducing electric characteristic deviation between chips to be manufactured while preventing an electrical short circuit.

Another object of the present invention is to provide a light emitting device that is slimmed by mounting a miniaturized and slim light emitting diode chip on a substrate using a bonding portion having a minimum thickness, and to provide a light emitting device having excellent durability.

Another object of the present invention is to provide a light emitting diode chip and a light emitting device which can prevent the product from being distorted while ensuring the durability of the product.

Another object of the present invention is to provide an application product including a light-emitting diode chip and / or a light-emitting device which is miniaturized and slimmed.

According to an embodiment of the present invention, A first conductive semiconductor layer disposed on the substrate; A mesa disposed on the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; An insulating layer covering the first conductivity type semiconductor layer and the mesa, the insulating layer including at least one first opening exposing the first conductivity type semiconductor layer and a second opening located at an upper portion of the mesa; A first pad electrode disposed on the insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And a second pad electrode disposed on the insulating layer and electrically connected to the second conductive type semiconductor layer through the second opening, wherein the first opening of the insulating layer is electrically connected to the second conductive type semiconductor layer by the first pad electrode And a second region exposed to the outside of the first pad electrode.

According to another embodiment of the present invention, Conductive wirings disposed on the base; The light emitting diode chip disposed on the base; And a first bonding material and a second bonding material for bonding the light emitting diode chip to the conductive wiring.

According to the present invention, a highly efficient light emitting diode chip and a light emitting device can be provided which are miniaturized and slimmer by providing a light emitting diode chip having a simple structure. In addition, the second region of the first opening is exposed to the outside of the first pad electrode, thereby reducing a change in electrical characteristics between the light emitting diode chips, stabilizing the manufacturing process, and improving the yield of LED chip manufacturing. Further, it is possible to prevent the LED chip from being distorted without processing the lead on the substrate, thereby improving the durability of the product, and it is possible to uniformly mount a plurality of chips in the product.

Other features and advantages of the present invention will be apparent from the following detailed description.

1 to 3 are plan views for explaining a light emitting diode chip 100 according to an embodiment of the present invention.
4 and 5 are cross-sectional views illustrating an LED chip 100 according to an embodiment of the present invention.
6 is a plan view for explaining a current path of the light emitting diode chip 100 according to the embodiment of the present invention.
FIGS. 7 to 11 are plan views and sectional views for explaining a light emitting diode chip 200 according to another embodiment of the present invention.
12 to 16 are plan views and sectional views for explaining a light emitting diode chip 300 according to another embodiment of the present invention.
17 to 21 are plan views and sectional views for explaining a light emitting diode chip 400 according to another embodiment of the present invention.
22A and FIG. 27B are plan views and sectional views for explaining a method of manufacturing the LED chip 100 according to an embodiment of the present invention.
28 is a schematic cross-sectional view for explaining a light emitting diode chip 100 having a wavelength converter according to another embodiment of the present invention.
29 is a schematic cross-sectional view for explaining a light emitting diode chip 100 having a wavelength converter according to another embodiment of the present invention.
Fig. 30 is a schematic perspective view of the LED chip of Fig. 29;
31 is a schematic cross-sectional view illustrating a light emitting device according to an embodiment of the present invention.
32 is a schematic cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.
FIG. 33 is a partial perspective view illustrating a light emitting diode chip according to an embodiment of the present invention. Referring to FIG.
34 is a schematic view for explaining a light strap according to an embodiment of the present invention.
35 is a schematic cross-sectional view for explaining an LED lamp according to an embodiment of the present invention.
36A to 38 are a perspective view, a plan view, a sectional view, and a circuit diagram for explaining an electronic device according to another embodiment of the present invention.
39 is a plan view for explaining a flexible keyboard according to another embodiment of the present invention.
40 is a partial cross-sectional view of Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.

In the following, light emitting diode chips, light emitting devices, and various applications are introduced. Here, the light emitting diode chip refers to a die separated from a wafer through an individualization process in a general sense used in a semiconductor process. The light emitting diode chip may be provided with a wavelength converter before or after individualization. The wavelength conversion unit provided on the light emitting diode chip may be referred to as a light emitting diode chip or a light emitting device, and is referred to as a light emitting diode chip in this specification. On the other hand, "light emitting device" means that the light emitting diode chip is mounted on a secondary substrate or a base. As long as the light emitting diode chip is mounted on the base, it can be named as any device, for example, a light emitting device including a specific application. In the detailed description, a single light emitting diode chip is referred to as a light emitting device. However, the light emitting device is not necessarily interpreted in such a narrow sense, and a light paper, a light strap, and a keyboard, which will be described later, .

A light emitting diode chip according to an embodiment of the present invention includes: a substrate; A first conductive semiconductor layer disposed on the substrate; A mesa disposed on the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; An insulating layer covering the first conductivity type semiconductor layer and the mesa, the insulating layer including at least one first opening exposing the first conductivity type semiconductor layer and a second opening located at an upper portion of the mesa; A first pad electrode disposed on the insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And a second pad electrode disposed on the insulating layer and electrically connected to the second conductive type semiconductor layer through the second opening, wherein the first opening of the insulating layer is electrically connected to the second conductive type semiconductor layer by the first pad electrode And a second region exposed to the outside of the first pad electrode.

By adding the second region, the first opening can be formed relatively large, and the process for forming the first opening within a limited design range can be stabilized. Thus, a small-sized light emitting diode chip can be easily provided. Furthermore, since the second region is located outside the first pad electrode, the contact area change of the first pad electrode is not affected. Therefore, even if the size of the first opening varies due to the tolerance in the manufacturing process, the variation of the contact area of the first pad electrode can be mitigated, thereby reducing the variation in electrical characteristics such as the forward voltage between the LED chips.

 Meanwhile, the insulating layer may include a plurality of first openings, and two of the first openings may be disposed on both sides of the mesa, respectively. Further, one of the first openings may be disposed on one side of the side surfaces of the mesa between the both side surfaces. By disposing the first openings on the sides of the mesa, the mesa area can be prevented from being reduced and the current can be evenly distributed in the mesa.

The mesa may include a plurality of grooves that are embedded from the side, and the plurality of first openings may partially expose the first conductive type semiconductor layer exposed in the plurality of grooves, respectively.

In some embodiments, the mesa further includes a through hole exposing the first conductive type semiconductor layer, and the insulating layer further includes an opening for exposing the first conductive type semiconductor layer in the through hole can do. The first pad electrode may be electrically connected to the first conductive type semiconductor layer through the through hole. By forming a through hole in the mesa, it is possible to help the current dispersion in the mesa.

The through-holes may be disposed between the grooves disposed on both sides of the mesa. However, the present invention is not limited thereto, and the position of the through hole may be changed.

The second region of the first opening may partially expose a side surface of the first conductivity type semiconductor layer. Therefore, the first opening can be formed to be relatively larger.

The light emitting diode chip may further include a contact electrode disposed between the mesa and the insulating layer and contacting the second conductive semiconductor layer, and the second pad electrode may be connected to the contact electrode.

The contact electrode may include a third opening, and the third opening may be located in the second opening. Accordingly, a part of the contact electrode may be exposed to the second opening, and a second pad electrode may be connected to the contact electrode and the second conductive type semiconductor layer in the second opening.

In some embodiments, the contact electrode may be a transparent electrode that transmits light generated in the active layer. Further, the light generated in the active layer may be emitted to the outside through the substrate, and may be emitted to the outside through a region between the first and second pad electrodes. Accordingly, a light emitting diode chip that emits light in both directions can be provided.

The light emitting diode chip may further include an extension electrode disposed on the first conductivity type semiconductor layer, the first opening of the insulation layer partially exposing the extended electrode, And may be connected to the extension electrode through the first opening.

In some embodiments, the light emitting diode chip may further include a wavelength converter disposed on the substrate. Further, the wavelength converting portion may cover the upper surface and the side surface of the substrate.

According to another embodiment of the present invention, there is provided a light emitting device comprising: a base; Conductive wirings disposed on the base; The above-described light emitting diode chip disposed on the base; And first and second bonding materials for bonding the light emitting diode chip to the conductive interconnection, wherein the first and second bonding materials are disposed on the first and second pad electrodes of the light emitting diode chip, respectively, Bonding.

The first bonding material may contact the first conductive semiconductor layer exposed in the second region. Even if the first bonding material contacts the first conductivity type semiconductor layer, there is no problem of electrical short circuit. Further, the first bonding material can perform Schottky contact with the first conductive type semiconductor layer, and thus the forward voltage does not change even if the first bonding material contacts the first conductive type semiconductor layer.

Meanwhile, the distance between the conductive wirings may be greater than the distance between the first and second pad electrodes.

Further, the first bonding material and the second bonding material may partially cover the side surfaces of the conductive wirings.

On the other hand, the base may be flexible and may be a transparent film. The base may have various shapes, for example, a paper shape having a large area or an elongated strip shape. Accordingly, the light emitting device may be provided as a light paper, a strap or band, a keyboard, or the like.

Meanwhile, according to embodiments of the present invention, various applications to which the LED chip is applied are provided.

Hereinafter, various embodiments of the present invention will be described with reference to the drawings.

1 to 3 are plan views for explaining a light emitting diode chip according to an embodiment of the present invention. Specifically, FIG. 1 shows the plane of the light emitting diode chip 100, and FIG. 3 is a plan view illustrating the first and second pad electrodes 151 and 153 of the light emitting diode chip 100, and FIG. 3 is a plan view illustrating the first and second pad electrodes 151 and 153 of the light emitting diode chip 100, 151 and 153, and the insulating layer 140 are omitted. 4 and 5 are sectional views illustrating a light emitting diode chip according to an embodiment of the present invention. Specifically, FIG. 4 shows a cross section of a portion corresponding to line A-A 'of FIGS. 1 to 3 , And Fig. 5 shows a cross section of a portion corresponding to line B-B 'in Figs. 6 is a plan view illustrating a current path of a light emitting diode chip according to an embodiment of the present invention.

1 to 5, a light emitting diode chip 100 according to embodiments includes a substrate 110, a light emitting structure 120, an insulating layer 140, a first pad electrode 151, (153). In addition, the light emitting diode chip 100 may further include a contact electrode 130.

The light emitting diode chip 100 may be a small light emitting diode chip having a relatively small horizontal area. The LED chip 100 can have a horizontal cross-sectional area of about 70000㎛ ² below, and further, at least about 30000㎛ ² may have a horizontal cross-sectional area of about ² or less 70000㎛. For example, the light emitting diode chip 100 may have a size of 310 mu m x 180 mu m or 330 mu m x 200 mu m. However, the lengths and the lengths of the LED chips 100 according to the embodiments are not limited to those described above. Also, the light emitting diode chip 100 may be a small light emitting diode chip having a relatively thin thickness. The light emitting diode chip 100 may have a thickness Tl of about 90 占 퐉 or less and may have a thickness T1 of about 40 占 퐉 to 90 占 퐉 and may have a thickness of about 80 占 퐉 T1). The light emitting diode chip 100 of the present embodiment has the above-described horizontal cross-sectional area and thickness, so that the light emitting diode chip 100 can be easily applied to various electronic devices requiring a small and / or slim light emitting device. Further, the light emitting diode chip 100 can be driven at a current density of 5 mA / mm ² or more and 400 mA / mm ² or less. The light emitting diode chip 100 can be suitably applied to an application in which a light emitting diode chip or a light emitting device is required to be small and slim by driving the light emitting diode chip 100 with such a current density.

The substrate 110 may be an insulating or conductive substrate. The substrate 110 may be a growth substrate for growing the light emitting structure 120, and may include a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. In addition, the substrate 110 includes a plurality of protrusions 110p formed on at least a part of its upper surface. The plurality of protrusions 110p of the substrate 110 may be formed in a regular and / or irregular pattern. For example, the substrate 110 may include a patterned sapphire substrate (PSS) including a plurality of protrusions 110p formed on an upper surface thereof.

Further, the substrate 110 may include at least one modified region 111 having a strip shape extending horizontally on at least one side of the substrate 110. The modified region 111 may be formed in the process of dividing the substrate 110 to individualize the device. For example, the modified region 111 may be formed on the side of the substrate 110 after the substrate 110 is divided by processing the substrate 110 before the individualization by using the internal processing method. An internal processing laser, that is, a stealth laser, may be used as the internal processing method. A scribing surface can be formed inside the substrate 110 through the internal processing laser, and the substrate 110 can be divided along the scribing surface. 4 and 5, the modified region 111 is illustrated as being formed inside the substrate 110, but this is for convenience of description, and as described above, the modified region 111 is formed on the substrate 110 110). ≪ / RTI >

The distance T2 from the modified region 111 to the upper surface of the substrate 110 may be smaller than the distance T4 from the modified region 111 to the lower surface of the substrate 110. [ The thickness T3 of the modified region 111 may be larger than T4. For example, the T2 may be about 30 占 퐉 to 35 占 퐉, the T3 may be about 15 占 퐉 to 20 占 퐉, and the T4 may be about 20 占 퐉 to 25 占 퐉.

Considering the light emitted to the side surface of the LED chip 100, laser processing is performed on the lower side of the substrate 110 so that the modified region 111 is relatively downwardly formed, The extraction efficiency of the formed light to the outside can be improved.

On the other hand, if the modified region 111 is formed close to the light emitting structure 120, the nitride based semiconductor may be damaged during the laser processing step, thereby causing a problem in electrical characteristics. Particularly, when the portion where the internal processing using the laser processing is performed is less than about 40 占 퐉 from the nitride-based semiconductor, the semiconductor portions located on the upper portion of the portion where the internal processing is performed may be damaged. In contrast, in the LED chip 100 of the present embodiment, the upper surface of the substrate 110 is exposed by isolating the light emitting structure 120 before the substrate 110 is divided, Internal processing can be performed under this exposed portion. Therefore, the nitride based semiconductor, that is, the light emitting structure 120 can be prevented from being damaged during internal processing using the laser. Thus, the distance T2 from the modified region 111 to the upper surface of the substrate 110 can be made relatively small, and as described above, the T2 can have a thickness in the range of about 30 mu m to 35 mu m have. The modified region 111 can be formed relatively close to the upper surface of the substrate 110 so that the thickness of the substrate 110 can be further reduced, Can be made more slim.

The light emitting structure 120 is located on the substrate 110. The area of the bottom surface of the light emitting structure 120 may be smaller than the area of the top surface of the substrate 110 so that the top surface of the substrate 110 may be exposed to at least a portion of the periphery of the light emitting structure 120 . The exposed region around the light emitting structure 120 is referred to as an isolation region. A plurality of protrusions 110p on the upper surface of the substrate 110 are positioned between the light emitting structure 120 and the substrate 110 and a plurality of protrusions 110p that are not covered with the light emitting structure 120, (Not shown).

By exposing the upper surface of the substrate 110 to the isolation region around the light emitting structure 120, bowing in the manufacturing process of the LED chip 100 can be reduced. Thus, damage to the light emitting structure 120 due to bouling can be prevented, and the yield of LED chip manufacturing can be improved. In addition, the bowing can be reduced to reduce the stress applied to the light emitting structure 120, and the thickness of the substrate 110 can be further reduced. Accordingly, a slim light emitting diode chip 100 having a thin thickness of about 90 mu m or less can be provided. In this regard, a method of manufacturing a light emitting diode chip will be described in more detail in the following embodiments.

The light emitting structure 120 includes a first conductive semiconductor layer 121, a second conductive semiconductor layer 125 disposed on the first conductive semiconductor layer 121, a first conductive semiconductor layer 121, And an active layer 123 located between the second conductivity type semiconductor layers 125. The first conductivity type semiconductor layer 121, the active layer 123 and the second conductivity type semiconductor layer 125 may include a III-V series nitride semiconductor, for example, (Al, Ga, In) N Based semiconductor, for example. The first conductivity type semiconductor layer 121 may include n-type impurities (e.g., Si, Ge, Sn) and the second conductivity type semiconductor layer 125 may include p-type impurities (e.g., Mg, Sr, Ba). It may also be the opposite. The active layer 123 may include a multiple quantum well structure (MQW), and the composition ratio of the nitride-based semiconductor may be adjusted so as to emit a desired wavelength. In particular, in this embodiment, the second conductivity type semiconductor layer 125 may be a p-type semiconductor layer.

The first conductive semiconductor layer 121 may have a vertical side surface, but may have an inclined side surface as shown in FIG. Furthermore, the inclination angle of the inclined side surface may be more gentle than that shown in Fig. For example, the inclined side may be gentle to about 40 degrees or less with respect to the bottom surface of the substrate 110. [ It is possible to prevent a defect such as a crack from being generated in the insulating layer 140 covering the light emitting structure 120 and the substrate 110 by gently forming the side surface of the first conductivity type semiconductor layer 121. [

In addition, the light emitting structure 120 includes a mesa 120m. The mesa 120m may be located on a partial region of the first conductivity type semiconductor layer 121 and includes an active layer 123 and a second conductivity type semiconductor layer 125. [ Therefore, a part of the first conductivity type semiconductor layer 121 may be exposed to the periphery of the mesa 120m. The planar shape of the mesa 120m may be similar to the planar shape of the LED chip 100. The planar shape of the mesa 120m may be similar to that of the light emitting diode chip 100, . For example, the mesa 120m may have a rectangular planar shape. However, the present invention is not limited thereto. The mesa 120m also includes a first side 120a, a third side 120c located opposite the first side 120a, a second side 120b and a second side 120b opposite the first side 120a, And a fourth side 120d.

Mesa (120m) may include a first portion (120m ₁₎ and a second part (120m _2). The first portion of the mesa (120m) (120m ₁₎ comprises at least one groove (120g) formed by constriction from the side of the mesa (120m). In one embodiment, the mesa 120m may include a plurality of grooves 120g, and a plurality of grooves 120g may be formed on at least three sides of the first portion 120m ₁ . As shown, the plurality of grooves 120g may be formed on the second side surface 120b, the third side surface 120c, and the fourth side surface 120d, respectively. The grooves 120g may provide a region where the first pad electrode 151 and the first conductive type semiconductor layer 121 are in electrical contact with each other, and further, an ohmic contact region.

In addition, the grooves 120g may be formed to have a reduced width from one side of the mesa 120m toward the center of the mesa 120m. Accordingly, when the first pad electrode 151 described later is formed so as to cover the side surface of the groove 120g, the first pad electrode 151 can be more stably formed, so that the first pad electrode 151 is insulated It is possible to prevent peeling from the layer 140. However, the shape of the groove 120g is not limited thereto, and the side surface of the groove 120g may include a plane and / or a curved surface. In one embodiment, the grooves 120g may be arranged regularly. For example, as shown in the figure, one groove 120g is formed to be positioned at almost the center portion of the third side face 120c, and the groove 120g located on the second side face 120b and the fourth side face 120d, (For example, the centers of the grooves 120g along the line B-B 'are located on the same line). Accordingly, the grooves 120g may be formed to be symmetrical with respect to a predetermined straight line (imaginary line) extending from the first side face 120a to the third side face 120c of the mesa 120m. As shown, in one embodiment, the grooves 120g may be arranged to be symmetrical with respect to the line A-A ', and further, the planar shape of the mesa 120m may also be symmetrical with respect to the line A-A' As shown in FIG. Through the symmetrical structure, a symmetrical light emission pattern can be realized.

The mesa 120m includes the grooves 120g arranged as described above to provide a contact area between the first conductive semiconductor layer 121 and the first pad electrode 151 through the groove 120g. In addition, the formation of the grooves 120g minimizes the sense of the light-emitting area due to the formation of the contact region and improves the current dispersion efficiency. In this regard, it will be described later in more detail with reference to Fig.

On the other hand, the contact electrode 130 is located on the second conductive type semiconductor layer 125. The contact electrode 130 may be in ohmic contact with the second conductivity type semiconductor layer 125. The contact electrode 130 may include a transparent electrode. For example, the transparent electrode may be formed of indium tin oxide (ITO), zinc oxide (ZnO), zinc tin oxide (ZITO), zinc tin oxide (ZTO), gallium indium tin oxide (GITO) , A light transmitting conductive oxide such as GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum Doped Zinc Oxide), FTO (Fluorine Tin Oxide) and the like and a light transmitting metal layer such as Ni / Au It is possible. The conductive oxide may further include various dopants.

In particular, the contact electrode 130 including the light-transmitting conductive oxide has a high ohmic contact efficiency with the second conductivity type semiconductor layer 125. That is, the contact resistance between the conductive oxide such as ITO or ZnO and the second conductive type semiconductor layer 125 is lower than the contact resistance with the second conductive type semiconductor layer 125 with the metallic electrode, By applying the electrode 130, the forward voltage V _f of the light emitting diode chip 100 can be reduced to improve the luminous efficiency. Particularly, in the case of a light emitting diode chip that is driven at a relatively low current density, such as the light emitting diode chip 100 of the present embodiment, contact resistance between the contact electrode 130 and the second conductivity type semiconductor layer 125 is lowered, The luminous efficiency can be improved more effectively. Further, since the conductive oxide is less likely to be peeled from the nitride based semiconductor layer as compared with the metallic electrode, the light emitting diode chip 100 having the contact electrode 130 including the conductive oxide has high reliability. On the other hand, the conductive oxide has a relatively low current dispersion efficiency in the horizontal direction as compared with the metallic electrode. However, since the light emitting diode chip 100 of this embodiment has a horizontal cross-sectional area of about 70000 μm ² or less, The efficiency is much smaller or hardly lower than that of a large-sized LED chip. Accordingly, by applying the contact electrode 130 including the conductive oxide to the light emitting diode chip 100, it is possible to improve the electrical characteristics and improve the light emitting efficiency.

The thickness of the contact electrode 130 is not limited, but may have a thickness of about 2000 Å to 3000 Å. For example, the contact electrode 130 including ITO may be formed to a thickness of about 2400 ANGSTROM. By having the thickness of the contact electrode 130 in the above-described range, the current can be smoothly dispersed in the horizontal direction, thereby improving the electrical characteristics of the LED chip 100.

The contact electrode 130 covers the upper surface of the second conductivity type semiconductor layer 125 as a whole, thereby improving the current dispersion efficiency when the LED chip 100 is driven. For example, the sides of the contact electrode 130 may be formed along the sides of the mesa 120m. In addition, the contact electrode 130 includes an opening 130b for partially exposing the second conductive type semiconductor layer 125. The contact area of the second pad electrode 153 can be increased by forming the second pad electrode 153 described later at least partially to fill the opening 130b. Accordingly, it is possible to effectively prevent the second pad electrode 153 from being peeled off from the contact electrode 130 or the light emitting structure 120.

The insulating layer 140 covers the upper surface and the side surface of the light emitting structure 120 and also covers the contact electrode 130. The insulating layer 140 covers the first conductivity type semiconductor layer covering the upper region and the side surface of the mesa 120m and the periphery of the mesa 120m. The insulating layer 140 may extend to the upper surface of the substrate 110 exposed to the periphery of the light emitting structure 120. Accordingly, the insulating layer 140 can be in contact with the upper surface of the substrate 110, so that the insulating layer 140 covering the side surface of the light emitting structure 120 can be disposed more stably. In addition, the insulating layer 140 may extend to the upper edge of the substrate 110. The insulating layer 140 covering the exposed upper surface of the substrate 110 may be formed along the protrusions 110p of the substrate 110 and thus may be formed on the upper surface of the substrate 110, The surface of the insulating layer 140 covering the insulating layer 140 may have a concave portion and a convex portion.

The insulating layer 140 has a first opening 140a partially exposing the first conductivity type semiconductor layer 121 and a second opening 140b located on the mesa 120m. However, the present invention is not limited thereto, and the insulating layer 140 may partially cover the upper surface of the substrate 110 and expose a portion of the upper surface of the substrate 110.

The first opening 140a of the insulating layer 140 may at least partially expose the first conductive type semiconductor layer 121 exposed by the groove 120g. At this time, the side surface of the groove 120g is covered with the insulating layer 140, so that electrical short-circuiting due to contact between the first pad electrode 151 and the side surface of the light emitting structure 120 is prevented. The first opening 140a may be used as a path for allowing electrical connection between the first conductive semiconductor layer 121 and the first pad electrode 151. [

The first opening 140a has a first region 140a1 covered with the first pad electrode 151 and a second region 140a2 exposed to the outside of the first pad electrode 151. [ Accordingly, at least a part of the region exposed by the first opening 140a is electrically connected to the first conductive semiconductor layer 121 by the first pad electrode 151, (151c). The first opening 140a may be formed in a shape substantially similar to the groove 120g.

The second opening 140b of the insulating layer 140 is located above the mesa 120m. The second opening 140b may partially expose the contact electrode 130. [ The second opening 140b may be used as a path for allowing electrical connection between the contact electrode 130 and the second pad electrode 153. [ On the other hand, in some embodiments, the second opening 140b is located corresponding to the position of the opening 130b of the contact electrode 130. [ At this time, the size of the second opening 140b is larger than the size of the opening 130b of the contact electrode 130, so that the upper surface of the contact electrode 130 is partially exposed in the second opening 140b. At least a portion of the contact electrode 130 region exposed through the second opening 140b may be electrically connected to the second pad electrode 153. [ Accordingly, the contact electrode 130 may include a second contact region 153c to which the contact electrode 130 and the second pad electrode 153 are electrically connected.

The insulating layer 140 may include a light-transmitting insulating material, and may include, for example, SiO ₂ , SiN _x , MgF ₂ , and the like. In addition, the insulating layer 140 may have a thickness greater than that of the contact electrode 130. Accordingly, the insulating layer 140 can provide a sufficient thickness that the light passing through it can be reflected and transmitted to the first and second pad electrodes 151 and 153. [ In this embodiment, the insulating layer 140 may comprise SiO ₂ and may have a thickness of, for example, about 540 nm.

In some embodiments, the insulating layer 140 may include a distributed Bragg reflector. The distributed Bragg reflector may be formed by repeatedly stacking dielectric layers having different refractive indexes, and the dielectric layers may include TiO _{2 ,} SiO ₂ , HfO ₂ , ZrO ₂ , Nb ₂ O ₅ , MgF ₂ , and the like. For example, the insulating layer 140 may have a structure of an alternately stacked TiO ₂ layer / SiO ₂ layer. Each layer of the distributed Bragg reflector may have an optical thickness of 1/4 of a specific wavelength and may be formed of 4 to 20 pairs. The uppermost layer of the insulating layer 140 may be formed of SiN _x . The layer formed of SiN _x is excellent in moisture-proof property and can protect the light emitting diode chip from moisture.

When the insulating layer 140 includes a distributed Bragg reflector, the insulating layer 140 may include an interface layer formed of SiO ₂ with a thickness of about 0.2 μm to 1.0 μm and a TiO ₂ layer / SiO ₂ layer formed on the interface layer at predetermined intervals And may include a repeatedly stacked laminated structure. The distributed Bragg reflector may have a reflectivity for relatively high visible light. The distributed Bragg reflector may be designed to have a reflectance of 90% or more with respect to light having an incident angle of 0 to 60 ° and a wavelength of 400 to 700 nm. The above-described distributed Bragg reflector having reflectance can be provided by controlling the type, thickness, stacking period, etc. of a plurality of dielectric layers forming the distributed Bragg reflector. Thus, it is possible to form a distributed Bragg reflector having a high reflectance for light of a relatively long wavelength (for example, 550 nm to 700 nm) and light of a relatively short wavelength (for example, 400 nm to 550 nm).

As such, the distributed Bragg reflector may include multiple laminate structures such that the distributed Bragg reflector has a high reflectance for light of a broad wavelength band. That is, the distributed Bragg reflector may include a first lamination structure in which dielectric layers having a first thickness are laminated, and a second lamination structure in which dielectric layers having a second thickness are laminated. For example, the distributed Bragg reflector has a first laminated structure in which dielectric layers having a thickness smaller than 1/4 of the optical thickness with respect to light having a center wavelength of visible light (about 550 nm) are laminated, and a first laminated structure having a center wavelength (about 550 nm) Lt; RTI ID = 0.0 > 1/4 < / RTI > optical thickness with respect to the light of the second layer stack. Furthermore, the above-mentioned distributed Bragg reflector has a dielectric layer having a thickness greater than 1/4 of the optical thickness with respect to light having a center wavelength (about 550 nm) of visible light and a dielectric layer having a thickness smaller than 1/4 of the optical thickness And may further include a third stacked structure repeatedly stacked.

The first pad electrode 151 and the second pad electrode 153 is the first portion of the insulating layer located on the (140), each mesa (120m) (120m ₁₎ and a second portion located on an (120m ₂₎ do. Further, the first pad electrode 151 and the second pad electrode 153 may be positioned adjacent to the first side surface 120a and the third side surface 120c of the mesa 120m, respectively. At least a portion of each of the first and second pad electrodes 153 is located on the mesa 120m and the first pad electrode 151 is connected to the upper surface and the side surface of the mesa 120m through the insulating layer 140, Can be insulated. The first pad electrode 151 covers the first area 140a1 of the first opening 140a and is spaced apart from the second area 140a2. The first pad electrode 151 is spaced apart from a part of the side surface of the first opening 140a and a space is formed between the side surface of the first opening 140a and the first pad electrode 151. [ The second region 140a2 of the first opening 140a is located outside the first pad electrode 151 and the region of the first conductive semiconductor layer 121 exposed by the second region 140a2 And is located outside the first pad electrode 151. The region of the first conductivity type semiconductor layer 121 exposed by the second region 140a2 may be covered with a bonding material when flip chip bonding the light emitting diode chip. This will be explained later.

The first pad electrode 151 covers a part of the first opening 140a so that the size of the first opening 140a can be relatively increased within a limited design range of the small size LED chip. If the size of the opening is too small, the etching may be difficult and the insulating layer may remain, and the size of the opening may vary greatly as the overetching angle (overetching) is generally performed. When the first pad electrode 151 completely covers the first opening 140a, a change in the contact resistance may be severe depending on the size variation of the first opening 140a. The first opening 140a has a second area 140a2 so that the size of the first opening 140a can be increased and even if the size of the first opening 140a is changed, The contact area change of the first pad electrode 151 is relatively small compared to the size change of the first opening 140a. Therefore, it is possible to provide the LED chips having a small change in the contact area of the first pad electrode 151 and having a small change in electrical characteristics, for example, a forward voltage, among the LED chips manufactured at a high yield.

On the other hand, the first part may be connected to the first pad electrode 151 of the first conductive type semiconductor layer 121 and electrically through the first opening (140a) positioned on the (120m _1), Further, the ohmic to contact . Particularly, the first pad electrode 151 may be formed to cover the side surface of the mesa 120m. At this time, the side surface of the mesa 120m and the first pad electrode 151 are insulated by the insulating layer 140 . A portion of the first conductive type semiconductor layer 121 exposed through the groove 120g and the first pad electrode 151 is formed as a first contact region 151c. In the present embodiment, the first area 140a2 of the first opening 140a may have the same area as the first contact area 151c, but the present invention is not necessarily limited thereto. In the following embodiments, This will be explained again.

The first conductivity type semiconductor layer 121 may be partially exposed through the second region 140a2 of the first opening 140a and the process margin may be secured by the second region 140a2, The manufacturing yield of the light emitting diode chip 100 can be improved.

The second portion the second electrode pad 153 is located on the (120m ₂₎ it can be electrically connected to the contact electrode 130 through the second opening (140b). At this time, at least a part of a region where the second pad electrode 153 and the contact electrode 130 are in contact with each other becomes the second contact region 153c. When the contact electrode 130 includes the opening 130b, the second pad electrode 153 may be in contact with the second conductive type semiconductor layer 125. [ In this case, the contact resistance between the second pad electrode 153 and the second conductive type semiconductor layer 125 is higher than the contact resistance between the second pad electrode 153 and the contact electrode 130, The current flowing through the contact electrode 130 is high. For example, the second pad electrode 153 and the second conductive semiconductor layer 125 may form a Schottky contact. Accordingly, the current crowding that may occur when the second pad electrode 153 contacts the second conductive type semiconductor layer 125 can be minimized.

Referring to FIG. 6, in driving the light emitting diode chip 100, current may be conducted from the second contact region 153c through the first contact region 151c. In the case where the groove 120g is formed on at least three sides of the mesa 120m, since the first contact region 151c is formed on the surface of the first conductive type semiconductor layer 121 exposed in the groove 120g, The current can be smoothly supplied to the side portion of the first portion 120m ₁ of the first portion 120m1. Therefore, the current can be evenly distributed over the entire surface of the light emitting region (the active layer 123 of the mesa 120m).

Particularly, when the first conductivity type semiconductor layer 121 is an n-type semiconductor layer, electrons are emitted from the first contact region 151c toward the second contact region 153c at the time of driving the LED chip 100 Direction. At this time, the electrons have higher mobility than the holes and can be evenly dispersed to the region between the second contact region 153c and the first side face 120a, while the holes can be dispersed evenly between the first contact region 151c It is difficult to disperse to the rear. According to the present embodiment, since the first contact region 151c is disposed near the edge of the mesa 120m away from the second contact region 153c, the edge region of the first portion 120m ₁ The current can be uniformly dispersed to the mesa 120m, and therefore light can be generated evenly in almost the entire region of the mesa 120m. Therefore, the light emitting efficiency of the small-sized light emitting diode chip 100 having a relatively small light emitting area can be improved.

In addition, since the groove 120g is formed on at least three sides of the mesa 120m, the area of the portion where the light emitting region is removed to form the electrical connection to the first conductivity type semiconductor layer 121 can be minimized. Accordingly, it is possible to minimize the reduction of the light emitting area in the LED chip 100 according to the embodiments having a relatively small area, thereby improving the light emitting power.

On the other hand, the shortest distance D2 from one first contact area 151c located farthest from the second contact area 153c to the second contact area 153c among the first contact areas 151c is 200 Mu m or less. 6, the shortest distance D2 from the second contact region 153c to the first contact region 151c adjacent to the third side face 120c may be 200 占 퐉 or less. For example, when D2 is more than 200 mu m, the current dispersion is not uniform around the first contact region 151c located farthest from the second contact region 153c, and the luminous efficiency can be reduced. Particularly, when the contact electrode 130 is a conductive oxide including ITO or the like, the current dispersion efficiency can be further improved by setting D2 to 200 mu m or less due to the limitation of the current dispersion through the contact electrode 130. [ However, the present invention is not limited thereto.

The first pad electrode 151 and the second pad electrode 153 may each have a top surface profile corresponding to the surface profile of the lower surface of the portion where they are formed. The first pad electrode 151 may include an inclined side surface located on the first opening portion 140a and the second pad electrode 153 may include a concave portion on the second opening portion 140b. (153a). As described above, a step is formed on the surfaces of the first and second pad electrodes 151 and 153 to increase the contact area between the first and second pad electrodes 151 and 153, The peeling of the first and second pad electrodes 151 and 153 can be prevented. Particularly, when the contact electrode 130 includes the opening 130b, the second pad electrode 153 is formed with the concave portion 153a having a stepped portion, and more effectively prevents the second pad electrode 153 from peeling off . In addition, a step is formed on the surfaces of the first and second pad electrodes 151 and 153, so that the LED chip 100 can be more stably bonded to the second substrate 300.

The shortest distance D1 between the first pad electrode 151 and the second pad electrode 153 may be relatively small and may be, for example, about 3 탆 to about 100 탆, , About 80 탆. It is possible to stably form the insulating layer 140 covering the side surface of the light emitting structure 120. This is because the light emitting diode chip 100 is bonded to the second substrate 300 The bonding portions 211 and 213 may be formed to cover the sides of the light emitting diode chip 100. Accordingly, there is no need to secure a process margin through the shortest distance D1 between the first pad electrode 151 and the second pad electrode 153, so that the distance between the first pad electrode 151 and the second pad electrode 153 Can be minimized to a minimum. In addition, since the small-sized LED chip 100 of this embodiment is driven at a relatively low current density, the shortest distance between the first pad electrode 151 and the second pad electrode 153 can be further reduced. The heat dissipation efficiency of the light emitting diode chip 100 can be improved by forming the shortest distance D1 between the first pad electrode 151 and the second pad electrode 153 within the above described range. The sum of the area of the first pad electrode 151 and the area of the second pad electrode 153 may be about 50% or more and 95% or more of the horizontal cross-sectional area of the LED chip 100. By setting the ratio of the horizontal cross-sectional area of the first and second pad electrodes 151 and 153 to the above-mentioned range, it is possible to improve reflection of light through the first and second pad electrodes 151 and 153, have.

However, the light may be emitted toward the first and second pad electrodes 151 and 153 in addition to the light emitted toward the substrate 110 under a specific object. For example, when the contact electrode 130 is formed of a light transmitting material and the insulating layer 140 is formed of a light transmitting material, a part of the light emitted from the active layer 123 is separated from the first pad electrode 151, 2 pad electrode 153. In this case, Accordingly, a light emitting diode chip emitting light in both directions may be provided. In this case, the sizes of the first pad electrode 151 and the second pad electrode 153 may be smaller.

FIGS. 7 to 9 are schematic plan views illustrating a light emitting diode chip according to another embodiment of the present invention, and FIGS. 10 and 11 are cross-sectional views illustrating a light emitting diode chip according to another embodiment of the present invention admit. Figs. 7 to 11 are views corresponding to Figs. 1 to 5, respectively.

7 to 11, the light emitting diode chip according to the present embodiment is substantially similar to the light emitting diode chip of the embodiment described above, except that the position and / or size of the first opening 140a of the insulating portion 140 . The first opening 140a of the light emitting diode chip according to the previous embodiment is defined on the upper surface of the first conductivity type semiconductor layer 121 to expose the upper surface of the first conductivity type semiconductor layer 121. In contrast, in the light emitting diode chip according to the present embodiment, the first opening 140a extends from the upper surface of the first conductivity type semiconductor layer 121 to the upper side of the first conductivity type semiconductor layer 121, And extends over the substrate 110. That is, the first opening 140a can expose not only the upper surface of the first conductive type semiconductor layer 121 exposed in the groove 120g but also the side surface of the first conductive type semiconductor layer 121, 110 may be exposed. 10A and 11A show that one end of the first opening 140a is located on the side surface of the first conductivity type semiconductor layer 121. FIGS. 10B and 11B show that one end of the first opening 140a is located on the substrate 110).

Also, the first opening 140a has a first region 140a1 and a second region 140a2 as in the above-described embodiment. The first area 140a1 may be the same as the first area 140a1 of the previous embodiment, but the second area 140a2 may be larger than the second area 140a2 of the previous embodiment.

The second region 140a2 is an area not covered by the first pad electrode 151, and consequently is exposed to the outside of the first pad electrode 151. [ The second region 140a is covered with a bonding material when the light emitting diode chip 100 is bonded to the circuit board. The first opening 140a is formed to expose the side surface of the first conductivity type semiconductor layer 121 and the upper surface of the substrate 110 so that the first opening 140a relatively large in the small- It is possible to stabilize the manufacturing process and further to reduce a variation in the physical and electrical characteristics of the light emitting diode chips.

In addition, since the bonding material is filled in the second region 140a, it is possible to prevent the light emitting diode chip 100 from being twisted or deviated from the bonding position when the light emitting diode chip 100 is bonded.

FIGS. 12 to 16 are views for explaining a light emitting diode chip according to another embodiment of the present invention, and each corresponds to the drawings of FIGS. 1 to 5.

12 to 16, the light emitting diode chip 300 according to the present embodiment is substantially similar to the embodiments described with reference to FIGS. 1 to 5 or 7 to 11, And a through hole 120h for exposing the one-conductivity-type semiconductor layer 121 is further included. The active layer 123 and the second conductivity type semiconductor layer 125 are exposed on the side wall of the through hole 120h.

The through hole 120h is spaced from the grooves 120g. The through hole 120h may be disposed between the second side surface 120b and the grooves 120g formed on the fourth side surface 120d, but is not limited thereto. The center of the through hole 120h may be located in the middle between the second side surface 120b and the grooves 120g formed in the fourth side surface 120d. However, the present invention is not limited thereto, May be closer or farther away from the groove 120g formed in the third side face 120c.

The contact electrode 130 surrounds the through hole 120h. The contact electrode 130 is spaced apart from the first conductive semiconductor layer 121 and the active layer 123 exposed in the through hole 120h in order to prevent an electrical short circuit.

On the other hand, the insulating layer 140 covers the active layer 123 and the second conductivity type semiconductor layer 125 exposed in the side wall of the through hole 120h. The insulating layer 140 further includes an opening 140c for exposing the first conductive semiconductor layer 121 in the through hole 120h in addition to the first openings 140a. The first region 140a1 is covered by the first pad electrode 151 and the second region 140a2 is exposed to the outside of the first pad electrode 151. However, (140c) are all covered with the first pad electrode (151).

Since the first pad electrode 151 is connected to the first conductive type semiconductor layer 121 through the through hole 120h, current dispersion can be further enhanced.

Meanwhile, the technical features of FIGS. 1 to 5 or 7 to 11 described above can be equally applied to the light emitting diode chip 300 of the present embodiment. Accordingly, the first openings 140a include a first region 140a1 and a second region 140a2. Further, the second region 140a2 is formed on the upper surface of the first conductive semiconductor layer 121, The first conductivity type semiconductor layer 121 may extend to the side of the first conductivity type semiconductor layer 121 in addition to the top surface of the first conductivity type semiconductor layer 121 and further may extend onto the substrate 110.

17 to 21 are views according to still another embodiment of the present invention, wherein each figure corresponds to FIGS. 1 to 5.

17 to 21, the light emitting diode chip 400 according to the present embodiment includes the light emitting diode chips 100, 200, and 200 described with reference to FIGS. 1 to 5, 7 to 11, or 12 to 16, 300, but it is different in that it further includes an elongated electrode 135.

The extended electrode 135 may be in ohmic contact with the first conductive semiconductor layer 121. The extension electrode 135 may be formed along the second side surface 120b and the fourth side surface 120d of the mesa 120m. The extended electrode 135 may be formed on the third side face 120c as well as on the second side face 120b and the fourth side face 120d. The grooves 120g may be formed to form the elongated electrode 135, but the grooves 120g are not necessarily required.

The first opening 140a of the insulating layer 140 exposes the extended electrode 135 and exposes the first conductive type semiconductor layer 121. The first opening 140a of the insulating layer 140 is formed in a first region 140a1 covered with the first pad electrode 151 and a first region 140b1 exposed outside the first pad electrode 151, 2 region 140a2. The first region 140a1 may be located on the extended electrode 135, but is not limited thereto. Accordingly, the first pad electrode 151 may be in contact with the first conductive semiconductor layer 121.

The first pad electrode 151 may be electrically connected to the first conductive type semiconductor layer 121 through the extended electrode 135. The extension electrode 135 is in ohmic contact with the first conductivity type semiconductor layer 121 so that the first pad electrode 151 may be formed of a material that is not in ohmic contact with the first conductivity type semiconductor layer 121. Therefore, the material selection range of the first pad electrode 151 and the second pad electrode 153 is widened.

The light emitting diode chip 400 according to the present embodiment can further enhance current dispersion in the light emitting diode chip 400 by including the extension electrode 135. [

22A and FIG. 27B are plan views and sectional views for explaining a method of manufacturing the LED chip 100 according to an embodiment of the present invention.

A detailed description of the substantially same components as those described in the above embodiments will be omitted. In addition, in the drawings of the embodiments described later, a method of manufacturing two LED chips 100 is shown, but the present invention is not limited thereto. Even when a single LED chip 100 is manufactured and three or more LED chips 100 are formed on a large area wafer, the manufacturing method of the LED chip 100 according to embodiments Can be applied. Also, while the method of manufacturing the light emitting diode chip 100 in this embodiment is described, it will be understood that those skilled in the art can similarly apply the method of manufacturing the light emitting diode chips 200, 300, and 400.

In each of the figures, the L1 line is defined as the boundary of the unit element regions UD1. That is, the light emitting structures 120 on both sides may be separated from each other with respect to the L1 line to be fabricated as two light emitting diode chips 100. Further, each of the cross-sectional views shows a cross-section in a corresponding plan view. For example, the cross section of the plan view of FIG. 22A is shown in FIG. 22B.

Referring to FIGS. 22A and 22B, a light emitting structure 120 is formed on a substrate 100. The light emitting structure 120 can be grown using various generally known methods. For example, the light emitting structure 120 may be formed by a technique such as MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), or HVPE (Hydride Vapor Phase Epitaxy) . ≪ / RTI >

Next, referring to FIGS. 23A to 24B, a mesa 120m including a groove 120g and a contact electrode 130 are formed. Further, the light emitting structure 120 is partly removed to form an isolation groove 120i exposing the upper surface of the substrate 110. [

Specifically, first, referring to FIGS. 23A and 23B, a contact electrode 130 is formed on the light emitting structure 120.

The contact electrode 130 may be formed on the second conductive semiconductor layer 125 of the light emitting structure 120 to form an ohmic contact with the second conductive semiconductor layer 125. The contact electrode 130 may comprise a light transmissive conductive oxide and / or a light transmissive metal. For example, forming the contact electrode 130 can include forming ITO on the second conductivity type semiconductor layer 125 using a deposition method such as sputtering and / or electron beam deposition. However, the present invention is not limited thereto. The formation of the contact electrode 130 may include forming various kinds of light-transmissive conductive oxides such as ZnO, and various manufacturing processes are applied depending on the kind of the conductive oxide .

24A and 24B, the mesa 120m including the second conductive semiconductor layer 125 and the active layer 123 is formed by patterning the light emitting structure 120, And is formed to include a plurality of grooves 120g embedded from its side. The light emitting structure 120 may be patterned to form an isolation groove (not shown) through the second conductive semiconductor layer 125, the active layer 123, and the first conductive semiconductor layer 121 to expose the upper surface of the substrate 110 120i. The patterning of the light emitting structure 120 can be performed, for example, using a dry etching and / or a wet etching process.

By the isolation groove 120i, the light emitting structure 120 is divided into a plurality of light emitting structures 120 located on each unit element region UD1. Therefore, the isolation groove 120i can be formed along the L1 line. In this manner, the isolation trench 120i is formed and the light emitting structure 120 is divided into a plurality of the light emitting structures 120 located on the plurality of unit element regions UD1, so that the substrate 110 and the light emitting structure 120 ) Can be relieved due to the difference in thermal expansion coefficient. Accordingly, it is possible to reduce the bowing of the wafer that occurs when the light emitting diode chip 100 is manufactured.

The contact electrode 130 may be patterned and the patterning of the contact electrode 130 may include forming an opening 130b that partially exposes the upper surface of the second conductive type semiconductor layer 125. [ Patterning of the contact electrode 130 can be performed, for example, using a dry etching and / or a wet etching process.

In the above-described embodiment, the contact electrode 130 is formed first and the light emitting structure 120 is patterned. However, the present invention is not limited thereto. In various embodiments, the contact electrode 130 may be formed on the second conductive semiconductor layer 125 after the light emitting structure 120 is patterned first.

Next, referring to FIGS. 25A and 25B, an insulating layer 140 covering the upper surface and side surfaces of the light emitting structure 120, including the first opening 140a and the second opening 140b, is formed.

The formation of the insulating layer 140 can include forming an SiO ₂ layer using a deposition method commonly known to those of ordinary skill in the art, and patterning the SiO ₂ layer. The patterning process may be performed using an etching or lift-off process. At this time, the insulating layer 140 may be formed to cover the upper surface of the substrate 110 exposed in the isolation groove 120i.

In addition, forming the insulating layer 140 may include forming a distributed Bragg reflector in which materials having different refractive indices are alternately stacked. For example, the formation of the insulating layer 140 may include alternately repeating deposition of a SiO ₂ layer and a TiO ₂ layer using a known deposition method such as sputtering.

Next, referring to FIGS. 26A and 26B, a first pad electrode 151 and a second pad electrode 153 may be formed on the insulating layer 140.

The first pad electrode 151 may be in contact with the first conductive semiconductor layer 121 through the first opening 140a of the insulating layer 140 and may be in ohmic contact. The second pad electrode 153 may be in contact with and electrically connected to the contact electrode 130 through the second opening 140b of the insulating layer 140. Similarly, The first and second pad electrodes 151 and 153 may be formed together in the same process and may be patterned through a photo / etch technique or a lift-off technique after being formed, for example, through a deposition and / have.

27A and 27B, it is possible to reduce the thickness of the substrate 110 by removing the portion 110a of the substrate 110. FIG. Thus, the thickness of the plurality of unit element regions UD1 can be made thinner by T1. Thereafter, by dividing the substrate 110 along the line L1, a plurality of light emitting diode chips 100 as shown in Figs. 1 to 6 can be provided.

Removing a portion 110a of the substrate 110 may include partially removing the substrate 110 through a physical and / or chemical method. For example, the substrate 110 may be partially removed using a method such as lapping, grinding, or the like. Reducing the thickness of the substrate 110 increases the stress by thinning the substrate 110 that supports the wafer while the wafer is bowed due to the difference in thermal expansion coefficient. Accordingly, the stress applied to the light emitting structure 120 increases, and the light emitting structure 120 is more likely to be damaged. However, according to the present embodiment, before the thickness of the substrate 110 is reduced, the isolation groove 120i for dividing the light emitting structure 120 into the plurality of light emitting structures 120 is formed to relax bouling, The damage of the light emitting structure 120, which may occur due to the reduction in the thickness of the substrate 110, can be prevented. In particular, due to the relatively small unit element regions UD1, the stress can be further reduced, and the thickness of each unit element region UD1 can be reduced to a thickness of about 90 mu m or less.

Dividing the substrate 110 along the L1 line may include separating the substrate 110 through a scribing and braking process. At this time, the scribing process may include internal processing of the substrate 110 using an internal machining laser (e.g., a stealth laser). At this time, if an internal processing laser is used, at least one modified region 111 having a strip shape extending in the horizontal direction may be formed on at least one side of the substrate 110. At this time, the modified region 111 may be formed at a depth of 30 탆 to 35 탆 from the upper surface of the substrate 110. Since the modified region 111 is formed under the isolation groove 120i, there is no possibility that the light emitting structure 120 is damaged in the process using the internal processing laser. Therefore, the modified region 111 can be formed relatively close to the upper surface of the substrate 110, and thus the distance from the modified region 111 to the upper surface of the substrate 110 can be in the above-described range. In this manner, the modified region 111 can be formed relatively close to the upper surface of the substrate 110, so that the light emitting diode chip 100 can be further reduced in thickness.

The light emitting diode chip 100 and the light emitting device according to the above embodiments include a portion where the upper surface of the substrate 110 is exposed to reduce wafer bending in the manufacturing process of the light emitting diode chip 100. Accordingly, since the degree of wafer bake is relatively small, the thickness of the substrate 110 can be reduced as described above, and the yield of manufacturing the light emitting diode chip 100 can be improved. Therefore, a light-emitting diode chip 100 and a light-emitting device which are downsized, slim and highly reliable are provided. The insulating layer 140 is formed to cover the side surface of the light emitting structure 120 and extend to cover the exposed upper surface of the substrate 110, particularly, the protrusion 110p of the substrate 110, The light emitting efficiency of the light emitting device 100 can be improved. Also, since the bonding portions 211 and 213 can cover the side surface of the light emitting diode chip 100 through the insulating layer 140, the light emitting device can be miniaturized and the mechanical stability of the light emitting device can be improved.

As described above, the light emitting device according to the embodiments is excellent in mechanical stability and luminous efficiency, and can be advantageously applied to a portable electronic device since it is downsized and slim. For example, the light emitting device or the light emitting diode chip 100 may be applied to a light paper requiring a thin thickness. As another example, when the light emitting device is applied to an input device such as a keyboard, the keypad may be positioned below the keypad of the light emitting device. In such an input device, the keypad is subjected to repeated external stresses (e.g., pressure for input). Also, portable input devices are required to be thin and small in size. The light emitting device according to the embodiments is small and slim, and is suitable for a slim portable input device. The light emitting device according to the embodiments is excellent in mechanical stability, so that the probability of a failure of the light emitting device due to the operation of the keyboard (for example, Is very small.

28 is a schematic cross-sectional view for explaining a light emitting diode chip 100 having a wavelength converter according to another embodiment of the present invention. Here, the light emitting diode chip 100 is the same as the light emitting diode chip 100 described above with reference to FIGS. 1 to 6, and therefore, redundant reference numerals are partially omitted. Further, although the light emitting diode chip 100 is described as an example in this embodiment, the light emitting diode chips 200, 300, and 400 of other embodiments may be used.

Referring to FIG. 28, the wavelength converter 500 may be disposed on the surface of the substrate 110 from which light is emitted. The wavelength converting portion 500 may include a transparent resin 510 and phosphor particles 530 dispersed in a transparent resin. The phosphor particles 530 may be uniformly dispersed in the transparent resin 510 but may be concentrated on the lower side of the wavelength conversion portion 500, that is, the side closer to the substrate 110, as shown in the figure. The wavelength converter 500 may directly contact the substrate 110 and may be formed using techniques such as screen printing or spraying.

By disposing the wavelength converting portion 500 on the substrate 110 on which light is emitted, at least part of the light emitted from the active layer 123 can be wavelength-converted, thereby realizing mixed light such as white light .

For example, the light emitting diode chip 100 may emit blue light, and the wavelength converting part 500 may include phosphor particles 530 that convert blue light into yellow light, green light, and red light. Thus, mixed light of blue light and converted light emitted from the phosphor particles 530 is realized.

The light emitting diode chip 100 may emit ultraviolet light or green light in addition to blue light depending on the material of the active layer 121.

29 is a schematic cross-sectional view illustrating a light emitting diode chip 100 having a wavelength converter according to another embodiment of the present invention, and FIG. 30 is a perspective view of FIG.

29 and 30, the wavelength converter 500 described above is disposed on the substrate 110 to cover the top of the substrate 110, but the wavelength converter 500 according to the present embodiment includes the substrate 110 ) As well as covering the side surface.

As described in the foregoing embodiments, the wavelength converter 500 may be provided directly on the light emitting diode chip 100, and may be packaged or modularized together with the light emitting diode chip 100. However, the present invention is not limited thereto, and may be provided on the light emitting diode chip 100 after the light emitting diode chip 100 is mounted at the package level or the module level. An embodiment of this will be described later again.

31 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.

31, the light emitting device includes a second substrate 1000, a light emitting diode chip 100 disposed on the second substrate 1000, a first bonding portion 211 and a second bonding portion 213, .

The second substrate 1000 may provide a region where the light emitting diode chip 100 is mounted, for example, a substrate of a light emitting diode package or a substrate of a light emitting module. The second substrate 1000 may include a conductive pattern 320 positioned on the base 310 and the base 310 and the conductive pattern 320 may include first and second conductive pads 321 and 323 . The second substrate 1000 may include a conductive substrate, an insulating substrate, or a printed circuit board (PCB). Further, the second substrate 1000 may be a rigid substrate, but is not limited thereto, and may be a flexible transparent substrate. Although the light emitting diode chip 100 is not flexible, the light emitting diode chip 100 of the present invention can be provided as a slim and small chip. Therefore, by arranging a plurality of such chips, a flexible light paper or a very thin light strap can be provided have.

The first and second conductive pads 321 and 323 are electrically isolated from each other. For example, the first and second conductive pads 321 and 323 may be electrically isolated from each other at a distance of D4. The first and second conductive pads 321 and 323 may be electrically connected to the first pad electrode 151 and the second pad electrode 153 of the LED chip 100, respectively. However, the present invention is not limited thereto. The second substrate 1000 may be provided with a region where the light emitting diode chip 100 is mounted, and may have a structure capable of forming an electrical connection with the light emitting diode chip 100 It is not limited.

The light emitting diode chip 100 is located on the second substrate 1000 and is electrically connected to the second substrate 1000. Here, the light emitting diode chip 100 will be described by way of example with reference to FIGS. 1 to 6. However, the light emitting diode chip 100 is not limited to those shown in FIGS. 7 to 11, 16, or the light emitting diode chips 200, 300, and 400 described with reference to FIGS.

The first bonding portion 211 and the second bonding portion 213 are positioned between the light emitting diode chip 100 and the second substrate 1000 to bond the light emitting diode chip 100 to the second substrate 1000, And electrically connected to each other. The first bonding portion 211 may be in contact with the first pad electrode 151 of the LED chip 100 and may be in contact with the first conductive pad 321 of the second substrate 1000. Similarly, the second bonding portion 213 may be in contact with the second pad electrode 153 of the LED chip 100 and may be in contact with the second conductive pad 321 of the second substrate 1000. The first and second bonding portions 211 and 213 are not limited as long as they electrically connect the LED chip 100 and the second substrate 1000 and bond the LED chip 100 and the second substrate 1000 to each other. The first and second bonding portions 211 and 213 may include, for example, solder, or may be a conductive plastic such as a conductive adhesive.

At least one of the first bonding portion 211 and the second bonding portion 213 may contact at least a part of the side surface of the light emitting diode chip 100. In one embodiment, at least one of the first bonding portion 211 and the second bonding portion 213 may cover at least a portion of the insulating layer 140 on the side of the light emitting structure 120. Further, the first bonding portion 211 may cover at least a part of the lower surface of the substrate 110 exposed to the periphery of the light emitting structure 120, and further may cover at least a part of the side surface of the substrate 110 have.

As such, at least one of the first bonding portion 211 and the second bonding portion 213 is formed to contact at least a part of the side surface of the LED chip 100, so that the first bonding portion 211, The shortest distance D3 between the first pad electrode 151 and the second pad electrode 153 may be larger than the shortest distance D1 between the first pad electrode 151 and the second pad electrode 153. [ Therefore, even if D 1 is relatively small (for example, about 3 탆 to 100 탆), D 3 can be formed to be larger than D 1, thereby preventing electrical shorts from occurring during mounting of the light emitting diode chip 100. In particular, since the insulating layer 140 of the light emitting diode chip 100 stably covers the side surface of the light emitting structure 120, the first bonding portion 211 and / or the second bonding portion 213 are formed on the light emitting diode chip 100 does not cause an electrical problem. In particular, since the insulating layer 140 is formed to extend to the exposed upper surface of the substrate 110, the side surface of the light emitting structure 120 can be more stably isolated, and the bonding portions 211 and 213 and the light emitting structure 120 Is prevented from being electrically short-circuited.

In addition, the area of contact of the bonding parts 211 and 213 with the light emitting diode chip 100 increases, so that the light emitting diode chip 100 can be more stably mounted, and the mechanical stability of the light emitting device can be improved. Further, the thickness of the bonding portions 211 and 213 interposed between the light emitting diode chip 100 and the second substrate 1000 (i.e., the distance between the light emitting diode chip 100 and the second substrate 1000) It is possible to make the light emitting device more compact and slimmer.

The first bonding portion 211 may contact the first conductivity type semiconductor layer 121 or the substrate 110 through the second region 140a2 of the first opening 140a of the insulating layer 140 . The first bonding portion 211 may be formed of a Schottky contact material to the second conductivity type semiconductor layer 121. Accordingly, even if the first bonding portion 211 contacts the first conductivity type semiconductor layer 121, the forward voltage of the light emitting diode chip 100 is not affected. Therefore, by increasing the area of the second region 140a2, the process can be stabilized without affecting the electrical characteristics.

28 and 29, the light emitting diode chip 100 to which the wavelength converter 500 is applied may be mounted on the substrate 1000. In this embodiment, the light emitting diode chip 100 is mounted on the substrate 1000, May be mounted on the substrate 1000.

32 is a schematic cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.

32, the light emitting device according to the present embodiment is substantially similar to the light emitting device described with reference to FIG. 31, except that the interval D4 (D4) between the first and second conductive pads 321 and 323 provided on the substrate 1000 Is larger than the interval D1 between the first pad electrode 151 and the second pad electrode 153. [ The first bonding material 211 and the second bonding material 213 may cover the sides of the first bonding material 211 and the second bonding material 213 in the region between the first and second conductive pads 321 and 323.

The interval D3 between the first bonding material 211 and the second bonding material 213 is set to a distance D1 between the first pad electrode 151 and the second pad electrode 153, And may be smaller than the distance D4 between the first and second conductive pads 321 and 323. However, the present invention is not limited thereto, and the first bonding material 211 and the second bonding material 213 may cover the side surfaces of the first pad electrode 151 and the second pad electrode 153 in the region between the first pad electrode 151 and the second pad electrode 153 The distance D3 between the first and second bonding materials 211 and 213 may be smaller than the distance D1 between the first and second pad electrodes 151 and 153. [

It is possible to easily prevent a short circuit between the first and second conductive pads 321 and 323 by increasing the distance D4 between the first and second conductive pads 321 and 323 relatively. Further, when the first and second bonding materials 211 and 213 are used to surface mount the light emitting diode chip 100, while heating or curing the first and second bonding materials 211 and 213, The position and direction of the chip 100 may be distorted. However, as in the present embodiment, the distance D4 between the first and second conductive pads 321 and 323 is made relatively large, and the first and second bonding materials 211 and 213 are arranged in the first and second The light emitting diode chip 100 can be prevented from being distorted in position and direction by spreading the light to the area between the conductive pads 321 and 323. In addition, since the first bonding material 211 fills the second region 140a2 of the first opening 140a of the insulating layer 140, it is possible to further prevent the LED chip 100 from being torn.

FIG. 33 is a partial perspective view illustrating a light emitting diode chip 100 according to an embodiment of the present invention. Referring to FIG.

The application may be, for example, a light paper or light strap (or light band), which is characterized by flexibility. Here, although they are referred to as application products, they may also be referred to as light emitting devices.

33A, conductive wirings 2321 and 2323 are disposed on a base 2000, and light emitting diode chips 100 are bonded on conductive wirings 2321 and 2323.

The base 2000 may be a flexible film, and further may be a transparent film. The base 2000 may have a long band shape, or may have a wide paper shape.

On the other hand, the conductive wirings 2321 and 2323 have a thin thickness so as to accommodate the bending of the base 2000. The conductive wirings 2321 and 2323 may have a relatively wide width as compared with the light emitting diode chip 100, and may be arranged in parallel with each other.

 The light emitting diode chips 100 may be bonded onto the conductive wirings 2321 and 2323 using the first and second bonding materials 211 and 213 described above.

The light emitting diode chips 100 emit light through the substrate 110, as described with reference to Figs. When the contact electrode 130 is formed as a transparent electrode and the insulating layer 140 is transparent to light, a part of the light generated in the active layer 123 may be transmitted through the first and second pad electrodes 151 and 153 And can be emitted to the outside through the region. The light emitted to the outside through the region between the first and second pad electrodes 151 and 153 will be emitted to the bottom of the base 2000 through the base 2000 again.

Therefore, the application according to this embodiment can emit light in both directions.

Here, it is described that the plurality of light emitting diode chips 100 are arranged, but the light emitting diode chips 200, 300, and 400 of the other embodiments described above may be arranged.

Referring to FIG. 33B, the application according to the present embodiment is substantially similar to the application described with reference to FIG. 33A, but differs in that the wavelength conversion layer 500 is formed on the light emitting diode chip 100. The light emitting diode chip 100 in which the wavelength converter 500 is formed is the same as that described with reference to FIG. 28 or 29, and a detailed description thereof will be omitted.

As the wavelength converting portion 500 is formed on the light emitting diode chip 100, at least a part of the light emitted through the substrate 110 is wavelength-converted. On the other hand, light emitted to the region between the first and second pad electrodes 151 and 153 can be emitted to the outside without wavelength conversion. Therefore, an article for emitting light of different colors in both directions can be provided.

34 is a schematic view for explaining a light strap according to an embodiment of the present invention.

Referring to FIG. 34, the light strap according to the present embodiment includes a base 2000, a conductive wiring (not shown), and an array of light emitting diode chips 100 as described with reference to FIG. Here, the base 2000 has an elongated shape and may be a flexible transparent film.

As the base 2000 is flexible and the small size LED chips 100 are arranged, the light strap can be easily deformed into a desired shape. Therefore, such a light strap has merits that it is easy to install in a narrow space, and is suitable for use as a decoration or a portable, and can be used for interior decoration lighting of a car, outdoor decoration lighting, It may also be attached to clothing.

In this embodiment, the array in which the light emitting diode chips 100 are arranged is an example, and the light emitting diode chips 200, 300, and 400 may be used, and further, the light emitting diode chips 100, 200, 300, 400) may be used.

35 is a schematic cross-sectional view for explaining an LED lamp according to an embodiment of the present invention.

35, the LED lamp includes a bulb base 3000, a central pillar 3100, an LED filament 3200, and a transparent bulb 3300.

The bulb base 3000 has the same electrode structure as that used in a conventional bulb. In addition, passive and active elements such as an AC / DC converter can be incorporated inside the bulb base 3000. [

Since the bulb base 3000 has the same electrode structure as that of the conventional bulb, the LED lamp according to the embodiments of the present invention can use a conventional socket, thus saving the installation cost of the LED lamp have.

The center pillar 3100 is fixed to the bulb base 3000 and disposed in the center of the LED lamp. The center pillar 3100 may include a pedestal, a post, and an upper end. The center pillar 3100 is for supporting the LED filament 3200 and may be formed of, for example, glass.

The LED filament 3200 includes a base, a conductive wiring, and a light emitting diode chip as a light strap as described with reference to Fig. 34, and a description thereof will be omitted. Since the LED filament 3200 is formed of a soluble light strap, the shape of the LED filament 3200 can be variously modified.

The LED filament 3200 may be electrically connected to the electrode of the bulb base 3000 through lead wires (not shown).

Transparent bulb 3300 surrounds LED filament 3200 and separates it from the external environment. The transparent bulb 3300 may be formed of glass or plastic. Transparent bulb 3300 may have various shapes and may have the same shape as a conventional bulb.

36A to 38 are a perspective view, a plan view, a sectional view, and a circuit diagram for explaining an application (electronic device) according to still another embodiment of the present invention. 37 is a sectional view for explaining each unit keypad 440u among the keypads 440 and FIG. 38 is a circuit diagram for explaining an example of the operation of the light emitting unit 460 according to the operation of the keypad 440u.

Referring to FIG. 36A, the electronic device 10 includes an input device 4000. For example, the electronic device 10 may be a notebook computer, as shown in FIG. 35A, and the input device 4000 may be a keyboard. The electronic device 10 may include a housing 12, a display 10, and an input device 4000 that constitute a basic frame. At this time, the input device 4000 may be formed integrally with the electronic device 10. Meanwhile, in various embodiments, the input device 4000 may be separate as well. As shown in Fig. 36B, the input device 4000 may individually constitute an electronic device. However, the electronic device 10 of the present embodiment corresponds to an example, and the light emitting diode chip and / or light emitting device of the present invention can be applied as long as the electronic device 10 includes the input device 4000. For example, various electronic devices such as a desktop computer including the input device 4000, a detection device, a communication device, and the like may be included in the present invention.

36A and 36B, the input device 4000 includes a keypad 440 and a light emitting portion 460 and further includes a housing 12 or 410, an input structure 420, a backlight 430, As shown in FIG.

The housing 12 or 410 may constitute an outer frame of the input device 4000 and serves to support the input structure 420, the backlight 430 and the keypad 440. The input structure 420 may serve to receive and transmit various input signals according to the control of the user's keypad 440. The input structure 420 may be located below the keypads 440 and may have a variety of known structures. The backlight 430 may illuminate the keypad 440 from below to enhance the visibility of the input device 4000, such as a keyboard, and / or to provide additional functionality to the input device 4000. The backlight 430 may include a light emitting diode chip and / or a light emitting device according to the above-described embodiments. The backlight 430 may be disposed to surround the keypads 440, or alternatively may be disposed below the keypads 440. However, the backlight 430 may be omitted.

In one embodiment, the light emitting portion 460 may be located below the keypad 440 of at least one of the plurality of keypads 440. At this time, the keypad 440 may include a light emitting region formed on the surface, and the light emitted from the light emitting portion 460 may be emitted through the light emitting region of the keypad 440. Referring to FIG. 37, the unit keypad 440 is positioned on the circuit board 411 and is supported by the support unit 450. The circuit board 411 and the support 450 may be included in the input structure 420. When the user transmits a signal (e.g., pressure or touch input) to the keypad 440, The signal can be input through the circuit board 411. [ The light emitting portion 460 is located on the circuit board 411 and may be located under the keypad 440. [ The light emitting portion 460 can be turned on / off according to an input signal of the keypad 440. For example, as shown in FIG. 16, the switch SW _key can be turned on / off according to an input signal of the keypad 440, whereby the resistance R _key of the circuit is connected or opened, (460) is controlled. When the user presses the keypad 440 to input a signal, the light emitting unit 460 is operated in an ON state, so that the user can press the keypad 440 through the light emitting area of the keypad 440, Light can be emitted. However, the present invention is not limited thereto, and various embodiments are possible. In other embodiments, the light emitting unit 460 is kept in an on state, and when a user applies a pressure to the keypad 440 to input a signal, the light emitting unit 460 operates in an off state And the light emitting area of the keypad 440 may be turned on. In other embodiments, when the user applies a pressure to the keypad 440 to input a signal, the brightness of the light emitting portion 460 is varied to change the brightness of the light emitting region of the keypad 440, May be driven in such a manner as to vary.

The light emitting portion 460 positioned below the keypad 440 may include the light emitting diode chip and / or the light emitting device described in the above embodiments. Because of the slimness and miniaturization of the electronic device, a very thin thickness of the input device 400 is required, so that a small light emitting diode chip and / or a small light emitting device can be applied. Particularly, by applying the small light emitting diode chip and / or the small light emitting device of the present invention to an input device of an electronic device such as an input device such as a portable keyboard or a lightweight notebook, the volume of the electronic device It is possible to improve the portability of the electronic devices. The light emitting portion 460 located under the keypad 440 is subjected to continuous stress according to the input of the keypad 440 and the stress is transmitted to the light emitting device of the light emitting portion 460 or the light emitting diode chip 100 So that the light emitting portion 460 may be defective. However, since the input device 4000 includes the light emitting diode chip 100 or the light emitting device of the present embodiments having excellent mechanical stability, it is possible to prevent the failure of the light emitting portion 460 due to the continuous operation of the keypad 440 .

39 is a partial plan view for explaining a keyboard according to another embodiment of the present invention, and Fig. 40 is a partial sectional view of Fig.

39 and 40, the keyboard according to the present embodiment includes a flexible base 5000, conductive wirings 5321 and 5323, a cover layer 5400, and a light emitting diode chip 100, (500).

The flexible base 5000 is similar to the base 2000 described above, and may be a transparent or opaque film. Circuit wirings 5320 are formed on the flexible base 5000, and conductive pads 5300 are provided at the respective keypad positions. The conductive pads 5300 are connected to the connector of the keyboard.

The conductive wirings 5321 and 5323 are formed on the base 5000 together with the circuit wiring 5320. The conductive wirings 5321 and 5323 are provided for supplying electric power to the light emitting diode chip 100. [

On the other hand, the cover layer 5400 is formed or attached on the flexible base 5000. The cover layer 5400 covers the circuit wiring 5320 and the conductive wirings 5321 and 5323, and exposes portions for electrical connection. The cover layer 5400 is not particularly limited as long as it is a flexible material, and may be formed of, for example, silicone or an epoxy resin.

The light emitting diode chip 100 is disposed near each of the conductive pads 5300. A plurality of light emitting diode chips 100 are disposed around each conductive pad 5300 and may be bonded onto the conductive wirings 5321 and 5323. Since the light emitting diode chip 100 has been described with reference to FIGS. 1 to 6, a detailed description thereof will be omitted. In addition to the light emitting diode chip 100, the light emitting diode chips 200, 300, and 400 of other embodiments described above may also be used.

On the other hand, the wavelength conversion unit 500 covers the light emitting diode chip 100. The wavelength converter 500 may fill the opening formed in the sheet 5400 to cover the light emitting diode chip 100. The wavelength converter 500 may include phosphor particles in a transparent resin. Thus, a mixed color light such as white light can be realized.

In this embodiment, the wavelength conversion portion 500 covers the light emitting diode chip 100, however, a sealing material formed of a transparent resin may cover the light emitting diode chip 100. In this case, the light generated in the LED chip 100 is emitted to the outside, so that monochromatic light such as blue light or green light can be emitted.

According to this embodiment, a flexible keyboard in which the light emitting diode chips 100 are arranged around each keypad can be provided. The flexible keyboard can be used as an input device of a portable electronic device.

In the above-described embodiments, the case where the light emitting diode chip and / or the light emitting device according to various embodiments of the present invention are applied to various electronic devices and illumination lamps has been described, but the present invention is not limited thereto. The light emitting diode chip and / or the light emitting device may be applied to various other electronic devices requiring a small light emitting portion, for example, a display device or the like. In addition, the light emitting diode chip and / or light emitting device can be suitably used for displaying various logos, and can be used for interior and exterior decoration of automobiles.

Claims (21)

Board;
A first conductive semiconductor layer disposed on the substrate;
A mesa disposed on the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer;
An insulating layer covering the first conductivity type semiconductor layer and the mesa, the insulating layer including at least one first opening exposing the first conductivity type semiconductor layer and a second opening located at an upper portion of the mesa;
A first pad electrode disposed on the insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And
And a second pad electrode disposed on the insulating layer and electrically connected to the second conductive type semiconductor layer through the second opening,
Wherein the first opening of the insulating layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode. The method according to claim 1,
Wherein the insulating layer includes a plurality of first openings, wherein two of the first openings are disposed on both sides of the mesa, respectively. The method of claim 2,
And one of the first openings is disposed on one side between the two side surfaces of the mesa. The method according to claim 1,
Wherein the mesa includes a plurality of grooves that are embedded from a side surface, and the plurality of first openings partially expose the first conductive type semiconductor layer exposed in the plurality of grooves, respectively. The method of claim 4,
The mesa further includes a through hole exposing the first conductive type semiconductor layer,
Wherein the insulating layer further includes an opening for exposing the first conductivity type semiconductor layer in the through hole,
And the first pad electrode is electrically connected to the first conductive type semiconductor layer through the through hole. The method of claim 5,
And the through-hole is disposed between the grooves disposed on both sides of the mesa. The method according to claim 1,
And the second region of the first opening partially exposes a side surface of the first conductive type semiconductor layer. The method according to claim 1,
And a contact electrode disposed between the mesa and the insulating layer and contacting the second conductivity type semiconductor layer,
And the second pad electrode is connected to the contact electrode. The method of claim 8,
The contact electrode includes a third opening, and the third opening is located in the second opening. The method of claim 8,
And the contact electrode is a transparent electrode that transmits light generated in the active layer. The method of claim 10,
Wherein the light generated in the active layer is emitted to the outside through the substrate and is emitted to the outside through a region between the first and second pad electrodes. The method according to claim 1,
Further comprising an extension electrode disposed on the first conductivity type semiconductor layer,
The first opening of the insulating layer partially exposing the extended electrode,
And the first pad electrode is connected to the extending electrode through the first opening. The method according to claim 1,
And a wavelength conversion unit disposed on the substrate. 14. The method of claim 13,
Wherein the wavelength conversion unit covers the upper surface and the side surface of the substrate. Base;
Conductive wirings disposed on the base;
A light emitting diode chip disposed on the base; And
And first and second bonding materials for bonding the light emitting diode chip to the conductive wiring,
Wherein the light emitting diode chip comprises:
Board;
A first conductive semiconductor layer disposed on the substrate;
A mesa disposed on the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer;
An insulating layer covering the first conductivity type semiconductor layer and the mesa, the insulating layer including at least one first opening exposing the first conductivity type semiconductor layer and a second opening located at an upper portion of the mesa;
A first pad electrode disposed on the insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And
And a second pad electrode disposed on the insulating layer and electrically connected to the second conductive type semiconductor layer through the second opening,
Wherein the first opening of the insulating layer includes a first region covered by the first pad electrode and a second region exposed to the outside of the first pad electrode,
Wherein the first and second bonding materials bond the first and second pad electrodes to the conductive interconnects, respectively. 16. The method of claim 15,
Wherein the first bonding material contacts the first conductive type semiconductor layer exposed in the second region. 16. The method of claim 15,
Wherein a spacing distance between the conductive wirings is greater than a spacing distance between the first and second pad electrodes. 18. The method of claim 17,
Wherein the first bonding material and the second bonding material partially cover the side surfaces of the conductive wirings. 16. The method of claim 15,
The base is flexible. The method of claim 19,
Wherein the base is a transparent film. 16. The method of claim 15,
And the base has an elongated strip shape.

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