KR20170045067A - Compact light emitting diode chip, light emitting device and electronic device including the same - Google Patents

Abstract

Disclosed are a light emitting diode chip, a light emitting device and an electronic device including the same. The light emitting diode chip includes: a substrate including a plurality of protrusions and disposed on the upper surface thereof; a light emitting structure disposed on the substrate and including at least one hole penetrating a second conductive semiconductor layer and an active layer to expose a part of a first conductive semiconductor layer; a contact electrode including a light transmitting conductive oxide; a light reflective insulating layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a part of the top of the substrate is exposed to the periphery of a light emitting structure, and the light reflective insulating layer is in contact with the top of the substrate exposed to the periphery of the light emitting structure. The upper edge of the substrate is spaced apart from the light reflective insulating layer. The present invention increases light emitting efficiency of the light emitting diode chip while minimizing the area and thickness of the light emitting diode chip.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a compact light emitting diode chip, a light emitting device including the light emitting diode chip,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small-sized light emitting diode chip, a light emitting device including the light emitting device and an electronic device, and in particular, to a compact light emitting diode chip having a small area and a small thickness,

Recently, with the increasing use of portable devices such as portable smart phones, tablet PCs, notebooks and the like, there is a growing demand for highly portable portable devices. Accordingly, it is necessary to develop portable electronic devices that are miniaturized and slimmer. Such portable electronic devices require various kinds of displays and light emitting devices. In order to miniaturize and slim down the portable electronic devices, a light emitting device having a small volume is indispensably required.

The light emitting diode is widely used as a light emitting device of the above-described portable device. The light emitting diode has a small volume to have a structure suitable for a slim and / or miniaturized portable electronic device, a light emitting diode chip having high luminous efficiency, Development of a device is required.

A problem to be solved by the present invention is to provide a light emitting diode chip having high luminous efficiency and high manufacturing yield while minimizing the area and thickness.

Another problem to be solved by the present invention is to provide a light-emitting device that is slimmed by mounting a miniaturized and slim light-emitting diode chip on a substrate using a bonding portion of a minimum thickness.

Another object of the present invention is to provide an electronic device including a miniaturized and slim light emitting diode chip and / or a light emitting device.

A light emitting diode chip according to an aspect of the present invention includes: a substrate including a plurality of protrusions formed on an upper surface; And a second conductivity type semiconductor layer disposed on the substrate and having a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, and an active layer disposed between the first and second conductivity type semiconductor layers, A light emitting structure including at least one hole penetrating the second conductivity type semiconductor layer and the active layer and exposing a part of the first conductivity type semiconductor layer; A contact electrode at least partially located on the second conductivity type semiconductor layer, the contact electrode comprising a light-transmitting conductive oxide that is in ohmic contact with the second conductivity type semiconductor layer; A first opening exposing the first conductive type semiconductor layer exposed through the hole, and a second opening partially exposing the contact electrode, the second opening including a distributed Bragg reflector A light-reflective insulating layer; A first pad electrode located on the light reflective insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And a second pad electrode located on the light reflective insulating layer and electrically connected to the contact electrode through the second opening, wherein a part of the upper surface of the substrate is exposed to the periphery of the light emitting structure, The insulating layer is in contact with the upper surface of the substrate exposed at the periphery of the light emitting structure, and the upper edge of the substrate is spaced apart from the light reflecting insulating layer.

A light emitting device according to another aspect of the present invention includes: a second substrate; A light emitting diode chip located on the second substrate; And a first bonding portion and a second bonding portion positioned between the light emitting diode chip and the second substrate, wherein the light emitting diode chip comprises: a first substrate including a plurality of protrusions formed on a bottom surface; A second conductive type semiconductor layer disposed on the first substrate and positioned below the first conductive type semiconductor layer, a first conductive type semiconductor layer located on the second conductive type semiconductor layer, and a second conductive type semiconductor layer disposed between the first and second conductive type semiconductor layers And at least one hole penetrating through the second conductive type semiconductor layer and the active layer and exposing a part of the first conductive type semiconductor layer; A contact electrode located at least partially below the second conductivity type semiconductor layer and ohmically contacting the second conductivity type semiconductor layer; A first opening exposing the first conductive type semiconductor layer exposed through the hole and a second opening partially exposing the contact electrode, the first and second openings partially covering the side and the bottom of the light emitting structure, A light-reflective insulating layer; A first pad electrode located below the light reflective insulating layer and electrically connected to the first conductive type semiconductor layer through the first opening; And a second pad electrode located below the light reflective insulating layer and electrically connected to the contact electrode through the second opening, wherein a portion of the first substrate bottom surface is exposed to the periphery of the light emitting structure, The light-reflecting insulating layer is in contact with the lower surface of the first substrate exposed to the periphery of the light-emitting structure, the lower edge of the first substrate is spaced apart from the light-reflecting insulating layer, and the first bonding portion and the second bonding portion And are electrically connected to the first and second pad electrodes, respectively.

In an electronic device including an input device according to another aspect of the present invention, the electronic device includes at least one of light emitting diode chips and light emitting devices according to various embodiments.

According to the present invention, there is provided a light emitting diode chip including a light-reflective contact layer including a light-reflective insulating layer which is exposed on an upper surface of a substrate around a light-emitting structure and covers an upper surface and a side surface of the light- A high-efficiency light emitting diode chip can be provided. Also, by providing a light emitting device including a bonding portion formed so as to cover a side surface of the light emitting diode chip, a highly efficient light emitting device having a reduced size and slimness can be provided. Furthermore, an electronic device including a highly efficient light emitting diode chip and / or a light emitting device that is miniaturized and slimmed can be provided.

FIGS. 1 to 3 are plan views and cross-sectional views for explaining a light emitting diode chip according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
5A and 10B are a plan view and a cross-sectional view illustrating a method for fabricating a light emitting diode chip according to another embodiment of the present invention.
11A to 13 are a perspective view, a plan view, a sectional view, and a circuit diagram for explaining an electronic device according to another embodiment of the present invention.

The light emitting diode chip, light emitting device, and electronic device according to embodiments of the present invention can be implemented in various aspects.

A light emitting diode chip according to various aspects of the present invention includes: a substrate including a plurality of protrusions formed on an upper surface; And a second conductivity type semiconductor layer disposed on the substrate and having a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, and an active layer disposed between the first and second conductivity type semiconductor layers, A light emitting structure including at least one hole penetrating the second conductivity type semiconductor layer and the active layer and exposing a part of the first conductivity type semiconductor layer; A contact electrode at least partially located on the second conductivity type semiconductor layer, the contact electrode comprising a light-transmitting conductive oxide that is in ohmic contact with the second conductivity type semiconductor layer; A first opening exposing the first conductive type semiconductor layer exposed through the hole, and a second opening partially exposing the contact electrode, the second opening including a distributed Bragg reflector A light-reflective insulating layer; A first pad electrode located on the light reflective insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And a second pad electrode located on the light reflective insulating layer and electrically connected to the contact electrode through the second opening, wherein a part of the upper surface of the substrate is exposed to the periphery of the light emitting structure, The insulating layer is in contact with the upper surface of the substrate exposed at the periphery of the light emitting structure, and the upper edge of the substrate is spaced apart from the light reflecting insulating layer.

The thickness of the light emitting diode chip may be 40 탆 or more and 90 탆 or less.

Horizontal cross-sectional area of the LED chip can be up to more than 30000㎛ ² 65000㎛ ^2.

The current density of the driving current of the LED chip can be equal to or less than 7mA / mm ² or more 250mA / mm ^2.

The sum of the areas of the first pad electrode and the second pad electrode may be 80% or more and 95% or less of the horizontal area of the LED chip.

The shortest distance between the first pad electrode and the second pad electrode may be 3 탆 to 20 탆.

Some of the protrusions exposed on the upper surface of the substrate may be covered with the light reflective insulating layer.

And the remaining part of the protrusions exposed on the upper surface of the substrate may be exposed.

The contact electrode includes a third opening covering the upper surface of the second conductive semiconductor layer and exposing a hole of the light emitting structure and at least one fourth opening partially exposing the second conductive semiconductor layer .

The width of the fourth opening may be smaller than the width of the second opening, and a portion of the upper surface of the contact electrode may contact the second pad electrode.

The substrate may comprise a patterned sapphire substrate.

The first pad electrode may be formed on the upper surface thereof and may include a concave portion corresponding to the position of the first opening, the second pad electrode may be formed on the upper surface thereof, and may correspond to the position of the second opening And a concave portion that is located in the vicinity of the center.

A light emitting device according to various aspects of the present invention includes: a second substrate; A light emitting diode chip located on the second substrate; And a first bonding portion and a second bonding portion positioned between the light emitting diode chip and the second substrate, wherein the light emitting diode chip comprises: a first substrate including a plurality of protrusions formed on a bottom surface; A second conductive type semiconductor layer disposed on the first substrate and positioned below the first conductive type semiconductor layer, a first conductive type semiconductor layer located on the second conductive type semiconductor layer, and a second conductive type semiconductor layer disposed between the first and second conductive type semiconductor layers And at least one hole penetrating through the second conductive type semiconductor layer and the active layer and exposing a part of the first conductive type semiconductor layer; A contact electrode located at least partially below the second conductivity type semiconductor layer and ohmically contacting the second conductivity type semiconductor layer; A first opening exposing the first conductive type semiconductor layer exposed through the hole and a second opening partially exposing the contact electrode, the first and second openings partially covering the side and the bottom of the light emitting structure, A light-reflective insulating layer; A first pad electrode located below the light reflective insulating layer and electrically connected to the first conductive type semiconductor layer through the first opening; And a second pad electrode located below the light reflective insulating layer and electrically connected to the contact electrode through the second opening, wherein a portion of the first substrate bottom surface is exposed to the periphery of the light emitting structure, The light-reflecting insulating layer is in contact with the lower surface of the first substrate exposed to the periphery of the light-emitting structure, the lower edge of the first substrate is spaced apart from the light-reflecting insulating layer, and the first bonding portion and the second bonding portion And are electrically connected to the first and second pad electrodes, respectively.

The shortest distance between the first and second bonding units may be greater than the shortest distance between the first and second pad electrodes.

At least one of the first bonding portion and the second bonding portion may at least partially cover a light reflective insulating layer covering a side surface of the light emitting structure.

At least one of the first and second bonding portions may at least partially cover the lower surface of the first substrate exposed in the periphery of the light emitting structure.

At least one of the first and second bonding portions may at least partially cover the side surface of the first substrate.

The first and second bonding portions may include solder.

In an electronic device including an input device according to various aspects of the present invention, the electronic device includes at least one of a light emitting diode chip and a light emitting device according to embodiments.

The input device may include a plurality of keypads, and the plurality of keypads may include a light emitting region formed on an upper surface thereof. The light emitted from the light emitting region may be emitted from the light emitting diode chip or the light emitting device .

The input device may include a plurality of keypads, and the plurality of keypads may include a light emitting area formed on an upper surface thereof, the light emitting diode chip may be positioned under at least a part of the plurality of keypads, The light emitted from the diode chip or the light emitting device may be emitted through the light emitting region.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.

1 to 3 are plan and sectional views for explaining a light emitting diode chip 100 according to an embodiment of the present invention. 1 is a plan view showing a plane view of the light emitting diode chip 100. FIG. 2 is a cross-sectional view illustrating the first and second pad electrodes 151 and 153 and the light reflective insulating layer 140 for convenience of explanation. And a plane view of the mesa 120m and the contact electrode 130. FIG. 3 is a cross-sectional view showing a cross-section of a portion corresponding to line A-A 'in Fig. 1 and Fig.

1 to 3, the light emitting diode chip 100 includes a substrate 110, a light emitting structure 120, a contact electrode 130, a light reflective insulating layer 140, a first pad electrode 151, Two pad electrodes 153 are formed.

The light emitting diode chip 100 may be a small light emitting diode chip having a relatively small horizontal area. The light emitting diode chip 100 may have a horizontal cross-sectional area of about 65000 μm ² or less, and further may have a horizontal cross-sectional area of about 30000 μm ² or more and about 65000 μm ² or less. For example, the light emitting diode chip 100 may have a size of 230 mu m x 180 mu m or 250 mu m x 200 mu m. However, the lengths and the lengths of the LED chips 100 according to the embodiments are not limited to those described above. Also, the light emitting diode chip 100 may be a small light emitting diode chip having a relatively thin thickness. The light emitting diode chip 100 may have a thickness T1 of about 90 占 퐉 or less and further may have a thickness T1 of about 40 占 퐉 to 90 占 퐉. The LED chip 100 can be driven at a current density of 7mA / mm ² or more 250mA / mm ² or less. The light emitting diode chip 100 of the present embodiment has the above-described horizontal cross-sectional area and thickness, so that the light emitting diode chip 100 can be easily applied to various electronic devices requiring a small and / or slim light emitting device.

The substrate 110 may be an insulating or conductive substrate. The substrate 110 may be a growth substrate for growing the light emitting structure 120, and may include a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. In addition, the substrate 110 includes a plurality of protrusions 110p formed on at least a part of its upper surface. The plurality of protrusions 110p of the substrate 110 may be formed in a regular and / or irregular pattern. For example, the substrate 110 may include a patterned sapphire substrate (PSS) including a plurality of protrusions 110p formed on an upper surface thereof.

Further, the substrate 110 may include at least one modified region 111 having a strip shape extending horizontally on at least one side of the substrate 110. The modified region 111 may be formed in the process of separating the substrate 110 to individualize the device. For example, the modified region 111 can be formed by internal processing of the substrate 110 using an internal processing method (e.g., a stealth dicing apparatus). The scribing surface can be formed inside the substrate 110 through the internal processing laser. At this time, the distance from the modified region 111 to the lower surface of the substrate 110 may be smaller than the distance from the modified region 111 to the upper surface of the substrate 110. Considering the light emitted to the side surface of the LED chip 100, laser processing is performed on the lower side of the substrate 110 so that the modified region 111 is relatively downwardly formed, The extraction efficiency of the formed light to the outside can be improved. Further, if the modified region 111 is formed close to the light emitting structure 120, the nitride based semiconductor may be damaged during the laser processing step, thereby causing a problem in electrical characteristics. Therefore, by forming the modified region 111 to be positioned below the substrate 110, it is possible to prevent the reliability of the light emitting diode chip 100 and the degradation of the light emitting efficiency due to the damage of the light emitting structure 120.

The light emitting structure 120 is located on the substrate 110. The area of the bottom surface of the light emitting structure 120 may be smaller than the area of the top surface of the substrate 110 so that the top surface of the substrate 110 may be exposed to at least a portion of the periphery of the light emitting structure 120 . A part of the plurality of protrusions 110p may be positioned between the light emitting structure 120 and the substrate 110 and a part of the plurality of protrusions 110p may be exposed to the periphery of the light emitting structure 120. [

The top surface of the substrate 110 is exposed to the periphery of the light emitting structure 120 to prevent damage to the light emitting structure 120 due to a reduction in bowing in the manufacturing process of the light emitting diode chip 100, Can be improved. In addition, the bowing can be reduced to reduce the stress applied to the light emitting structure 120, and the thickness of the substrate 110 can be further reduced. Accordingly, a slim light emitting diode chip 100 having a thin thickness of about 90 mu m or less can be provided. This will be described in more detail in the following embodiments.

The light emitting structure 120 includes a first conductive semiconductor layer 121, a second conductive semiconductor layer 125 disposed on the first conductive semiconductor layer 121, a first conductive semiconductor layer 121, And an active layer 123 located between the second conductivity type semiconductor layers 125. The first conductivity type semiconductor layer 121, the active layer 123 and the second conductivity type semiconductor layer 125 may include a III-V series nitride semiconductor, for example, (Al, Ga, In) N Based semiconductor, for example. The first conductivity type semiconductor layer 121 may include n-type impurities (e.g., Si, Ge, Sn) and the second conductivity type semiconductor layer 125 may include p-type impurities (e.g., Mg, Sr, Ba). It may also be the opposite. The active layer 123 may include a multiple quantum well structure (MQW), and the composition ratio of the nitride-based semiconductor may be adjusted so as to emit a desired wavelength. In particular, in this embodiment, the second conductivity type semiconductor layer 125 may be a p-type semiconductor layer.

The light emitting structure 120 may include at least one hole 120h through which the first conductivity type semiconductor layer 121 is exposed at least partially through the active layer 123 and the second conductivity type semiconductor layer 125 . The hole 120h may partially expose the first conductivity type semiconductor layer 121 and the side surface of the hole 120h may be surrounded by the active layer 123 and the second conductivity type semiconductor layer 125. [ The light emitting structure 120 may include a mesa 120m including an active layer 123 and a second conductive semiconductor layer 125. [ The mesa 120m is located on the first conductivity type semiconductor layer 121. [ The hole 120h may be formed to penetrate the mesa 120m so that the hole 120h may be formed to be surrounded by the mesa 120m. However, the light emitting diode chip 100 according to the present embodiment is not limited as long as it has a structure in which the first conductivity type semiconductor layer 121 is exposed by the hole 120h, and the mesa 120m may be omitted .

The contact electrode 130 is located on the second conductive type semiconductor layer 125. The contact electrode 130 may be in ohmic contact with the second conductivity type semiconductor layer 125. The contact electrode 130 may include a transparent electrode. For example, the transparent electrode may be formed of indium tin oxide (ITO), zinc oxide (ZnO), zinc tin oxide (ZITO), zinc tin oxide (ZTO), gallium indium tin oxide (GITO) , A light transmitting conductive oxide such as GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum Doped Zinc Oxide), FTO (Fluorine Tin Oxide) and the like and a light transmitting metal layer such as Ni / Au It is possible. The conductive oxide may further include various dopants.

In particular, the contact electrode 130 including the light-transmitting conductive oxide has high ohmic contact efficiency with the second conductivity type semiconductor layer 125. That is, the contact resistance between the conductive oxide such as ITO or ZnO and the second conductive type semiconductor layer 125 is lower than the contact resistance with the second conductive type semiconductor layer 125 with the metallic electrode, By applying the electrode 130, the forward voltage V _f of the light emitting diode chip 100 can be reduced to improve the luminous efficiency. Particularly, in the case of a light emitting diode chip that is driven at a relatively low current density, such as the light emitting diode chip 100 of the present embodiment, contact resistance between the contact electrode 130 and the second conductivity type semiconductor layer 125 is lowered, The luminous efficiency can be improved more effectively. Further, since the conductive oxide is less likely to be peeled from the nitride based semiconductor layer as compared with the metallic electrode, the light emitting diode chip 100 having the contact electrode 130 including the conductive oxide has high reliability. On the other hand, since the conductive oxide has a relatively low current dispersion efficiency in the horizontal direction as compared with the metallic electrode, the light emitting diode chip 100 of this embodiment has a horizontal cross-sectional area of about 65000 μm ² or less, There is very little or no reduction in efficiency. Accordingly, by applying the contact electrode 130 including the conductive oxide to the light emitting diode chip 100, it is possible to improve the electrical characteristics and improve the light emitting efficiency.

The thickness of the contact electrode 130 is not limited, but may have a thickness of about 2000 Å to 3000 Å. For example, the contact electrode 130 including ITO may be formed to a thickness of about 2400 ANGSTROM. By having the thickness of the contact electrode 130 in the above-described range, the current can be smoothly dispersed in the horizontal direction, thereby improving the electrical characteristics of the LED chip 100.

In addition, the contact electrode 130 includes a first opening 130a exposing at least one hole 120h. The side surface of the first opening 130a may be spaced apart from the at least one hole 120h and may be formed to surround at least one hole 120h. At this time, the size of the first opening 130a is larger than the size of the upper portion of the hole 120h. The contact electrode 130 covers the upper surface of the second conductivity type semiconductor layer 125 as a whole, thereby improving the current dispersion efficiency when the LED chip 100 is driven. In addition, the contact electrode 130 may further include at least one second opening 130b for partially exposing the second conductive type semiconductor layer 125. The contact area of the second pad electrode 153 can be increased by forming the second pad electrode 153 described later at least partially to fill the second opening 130b. Accordingly, it is possible to effectively prevent the second pad electrode 153 from being peeled off from the contact electrode 130 or the light emitting structure 120. This will be described in more detail below.

The light reflective insulating layer 140 covers the upper surface and the side surface of the light emitting structure 120 and also covers the contact electrode 130. In addition, the light reflective insulating layer 140 may extend to the upper surface of the substrate 110 exposed to the periphery of the light emitting structure 120. Accordingly, the light reflective insulating layer 140 can be in contact with the upper surface of the substrate 110, so that the light reflective insulating layer 140 covering the side surface of the light emitting structure 120 can be more stably disposed. However, the light reflecting insulating layer 140 is not formed to extend to the upper edge of the substrate 110, and the upper surface of the upper edge of the substrate 110 is exposed. The light reflective insulating layer 140 includes a third opening 140a partially exposing the first conductivity type semiconductor layer 121 exposed in at least one hole 120h and a third opening 140b partially exposing the contact electrode 130 The first opening 140a and the second opening 140b.

The third opening 140a of the light reflective insulating layer 140 partially exposes the first conductive type semiconductor layer 121 exposed in at least one hole 120h. At this time, the side surface of the hole 120h is covered with the light reflective insulating layer 140 to prevent electrical short-circuiting. The third opening 140a may be used as a path for allowing electrical connection between the first conductive type semiconductor layer 121 and the first pad electrode 151. [ The fourth opening 140b of the light reflective insulating layer 140 partially exposes the contact electrode 130. [ The fourth opening 140b may be used as a path for allowing electrical connection between the contact electrode 130 and the second pad electrode 153. Meanwhile, in some embodiments, the fourth opening 140b is located corresponding to the position of the second opening 130b of the contact electrode 130. [ At this time, the size of the fourth opening 140b is larger than that of the second opening 130b, so that the upper surface of the contact electrode 130 is partially exposed in the fourth opening 140b.

The light reflective insulating layer 140 may comprise a distributed Bragg reflector. The distributed Bragg reflector may be formed by repeatedly stacking dielectric layers having different refractive indices. For example, the dielectric layers may include TiO _{2 ,} SiO ₂ , HfO ₂ , ZrO ₂ , Nb ₂ O ₅ , MgF ₂ , and the like. In some embodiments, the light reflective insulating layer 140 may have a structure of an alternately stacked TiO ₂ layer / SiO ₂ layer. Each layer of the distributed Bragg reflector may have an optical thickness of 1/4 of a specific wavelength and may be formed of 4 to 20 pairs. The uppermost layer of the light reflective insulating layer 140 may be formed of SiN _x . The layer formed of SiN _x is excellent in moisture-proof property and can protect the light emitting diode chip from moisture.

When the light reflective insulating layer 140 includes a distributed Bragg reflector, the lowermost layer of the light reflective insulating layer 140 may serve as a base layer or an interface layer capable of improving the film quality of the distributed Bragg reflector. As shown in the enlarged view of FIG. 3, the light reflective insulating layer 140 includes an interface layer 141 having a relatively thick thickness and a laminate structure 143 of dielectric layers having different refractive indexes located on the interface layer 141 ). For example, the light reflective insulating layer 140 is formed by stacking an interfacial layer 141 formed of SiO ₂ with a thickness of about 0.2 μm to 1.0 μm and a laminated structure having a TiO ₂ layer / SiO ₂ layer repeatedly laminated at predetermined intervals on the interface layer 141 (Not shown).

The distributed Bragg reflector may have a reflectivity for relatively high visible light. The distributed Bragg reflector may be designed to have a reflectance of 90% or more with respect to light having an incident angle of 0 to 60 ° and a wavelength of 400 to 700 nm. The above-described distributed Bragg reflector having reflectance can be provided by controlling the type, thickness, stacking period, etc. of a plurality of dielectric layers forming the distributed Bragg reflector. Thus, it is possible to form a distributed Bragg reflector having a high reflectance for light of a relatively long wavelength (for example, 550 nm to 700 nm) and light of a relatively short wavelength (for example, 400 nm to 550 nm).

As such, the distributed Bragg reflector may include multiple laminate structures such that the distributed Bragg reflector has a high reflectance for light of a broad wavelength band. That is, the distributed Bragg reflector may include a first lamination structure in which dielectric layers having a first thickness are laminated, and a second lamination structure in which dielectric layers having a second thickness are laminated. For example, the distributed Bragg reflector has a first laminated structure in which dielectric layers having a thickness smaller than 1/4 of the optical thickness with respect to light having a center wavelength of visible light (about 550 nm) are laminated, and a first laminated structure having a center wavelength (about 550 nm) Lt; RTI ID = 0.0 > 1/4 < / RTI > optical thickness with respect to the light of the second layer stack. Furthermore, the above-mentioned distributed Bragg reflector has a dielectric layer having a thickness greater than 1/4 of the optical thickness with respect to light having a center wavelength (about 550 nm) of visible light and a dielectric layer having a thickness smaller than 1/4 of the optical thickness And may further include a third stacked structure repeatedly stacked.

The light reflective insulating layer 140 may partially cover the exposed portion of the substrate 110. At this time, the light reflective insulating layer 140 may partially cover the protrusions 110p of the exposed portion of the upper surface of the substrate 110. As shown in the enlarged view of FIG. 3, the light reflective insulating layer 140 may cover a part of the exposed protrusions 110p. The surface of the light reflective insulating layer 140 covering the top surface of the substrate 110 may have a surface profile that is generally similar to the surface of the substrate 110. [ The light reflecting insulating layer 140 is formed so as to cover the exposed protrusions 110p of the substrate 110 so that the light scattered by the exposed protrusions 110p is reflected to improve the luminous efficiency of the light emitting diode chip 100 .

The light emitting efficiency of the light emitting diode chip 100 can be improved by reflecting light on the distributed Bragg reflector of the light reflective insulating layer 140 covering the upper surface and side surfaces of the light emitting structure 120 almost entirely. Particularly, light transmitted through the contact electrode 130 including a conductive oxide, which can improve the electrical characteristics of the LED chip 100, is reflected by the light reflective insulating layer 140 and is emitted to the lower portion of the substrate 110 . The light reflecting reflective insulating layer 140 is formed to cover the side surface of the light emitting structure 120 so that the light directed toward the side surface of the light emitting structure 120 is also reflected by the light reflecting insulating layer 140, . The upper surface of the substrate 110 around the light emitting structure 120 is exposed so that the light reflecting insulating layer 140 contacts the upper surface of the substrate 110 to more stably cover the side surface of the light emitting structure 120, It is possible to minimize light that is lost through the side surface of the substrate 120.

On the other hand, even when the light reflective insulating layer 140 is in contact with the upper surface of the substrate 110, the upper surface around the upper edge of the substrate 110 is exposed. That is, the upper edge of the substrate 110 is spaced apart from the light reflective insulating layer 140. Accordingly, in the process of forming the plurality of LED chips 100 by dividing the wafer, the process of dividing the substrate 110 (e.g., the process of dividing the substrate 110 through the inner process dicing, scribing and / (For example, peeling, cracking, etc.) of the light-reflective insulating layer 140 by laser or the like is prevented. In particular, in the case where the light-reflective insulating layer 140 includes a distributed Bragg reflector, the light reflectance may be lowered if the light-reflective insulating layer 140 is damaged. According to this embodiment, deterioration in luminous efficiency due to damage to the light reflective insulating layer 140 can be prevented. This will be described in more detail in the following embodiments.

The first pad electrode 151 and the second pad electrode 153 are located on the light reflective insulating layer 140. The first pad electrode 151 may make an ohmic contact with the first conductive semiconductor layer 121 through the third opening 140a and the second pad electrode 153 may make an ohmic contact with the contact electrode 140a through the fourth opening 140b. (Not shown). When the contact electrode 130 includes the second opening 130b, the second pad electrode 153 may be in contact with the second conductive type semiconductor layer 125. In this case, the contact resistance between the second pad electrode 153 and the second conductive type semiconductor layer 125 is higher than the contact resistance between the second pad electrode 153 and the contact electrode 130, The current flowing through the contact electrode 130 is high. For example, the second pad electrode 153 and the second conductive semiconductor layer 125 may form a Schottky contact. Accordingly, the current crowding that may occur when the second pad electrode 153 contacts the second conductive type semiconductor layer 125 can be minimized.

The first pad electrode 151 and the second pad electrode 153 may each have a top surface profile corresponding to the surface profile of the lower surface of the portion where they are formed. The first pad electrode 151 may include a concave portion 151a positioned on the third opening portion 140a and the second pad electrode 153 may be located on the fourth opening portion 140b And may include a concave portion 153a. As described above, the surface of the first and second pad electrodes 151 and 153 is formed with a step, and the contact area of the first and second pad electrodes 151 and 153 increases, The first and second pad electrodes 151 and 153 can be prevented from peeling off. Particularly, when the contact electrode 130 includes the second opening 130b, the second pad electrode 153 has a concave portion 153a having a stepped portion, and more effectively, the second pad electrode 153 is peeled off Can be prevented.

The shortest distance D1 between the first pad electrode 151 and the second pad electrode 153 may be relatively small and may be, for example, about 3 탆 to about 20 탆. The light emitting diode chip 100 can be stably formed on the second substrate 300 as described in the following embodiments because the light reflecting and insulating layer 140 covering the side surface of the light emitting structure 120 can be stably formed. The bonding portions 211 and 213 may be formed to cover the side surfaces of the light emitting diode chip 100. Accordingly, there is no need to secure a process margin through the shortest distance D1 between the first pad electrode 151 and the second pad electrode 153, so that the distance between the first pad electrode 151 and the second pad electrode 153 Can be minimized to a minimum. In addition, since the small-sized LED chip 100 of this embodiment is driven at a relatively low current density, the shortest distance between the first pad electrode 151 and the second pad electrode 153 can be further reduced. The heat dissipation efficiency of the light emitting diode chip 100 can be improved by forming the shortest distance D1 between the first pad electrode 151 and the second pad electrode 153 within the above described range. At this time, the sum of the area of the first pad electrode 151 and the area of the second pad electrode 153 may be about 80% or more and 95% or more of the horizontal cross-sectional area of the LED chip 100.

4 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.

4, the light emitting device includes a second substrate 300, a light emitting diode chip 100 disposed on the second substrate 300, a first bonding portion 211 and a second bonding portion 213, .

The second substrate 300 may provide an area where the light emitting diode chip 100 is mounted, for example, a substrate of a light emitting diode package or a substrate of a light emitting module. The second substrate 300 may include first and second conductive patterns 321 and 323 located on the base 310 and the base 310. The second substrate 300 may include a conductive substrate, an insulating substrate, or a printed circuit board (PCB). For example, as shown, the second substrate 300 may include an insulating base 310, first and second conductive patterns 321 and 323 located on the base 310 and electrically spaced from each other. have. For example, the first and second conductive patterns 321 and 323 may be electrically isolated from each other by a distance of D3. The first and second conductive patterns 321 and 323 may be electrically connected to the first pad electrode 151 and the second pad electrode 153 of the LED chip 100, respectively. However, the present invention is not limited thereto, and the second substrate 300 may provide an area where the light emitting diode chip 100 is mounted, and may have a structure capable of forming an electrical connection with the light emitting diode chip 100 .

The light emitting diode chip 100 is disposed on the second substrate 300 and electrically connected to the second substrate 300. The light emitting diode chip 100 may be the light emitting diode chip 100 according to various embodiments described with reference to FIGS.

The first bonding portion 211 and the second bonding portion 213 are positioned between the LED chip 100 and the second substrate 300 and are bonded to the second substrate 300 And electrically connected to each other. The first bonding portion 211 may be in contact with the first pad electrode 151 of the LED chip 100 and may be in contact with the first conductive pattern 321 of the second substrate 300. Similarly, the second bonding portion 213 may be in contact with the second pad electrode 153 of the LED chip 100 and may contact the second conductive pattern 321 of the second substrate 300. The first and second bonding units 211 and 213 are not limited as long as the LED chip 100 and the second substrate 300 are electrically connected to each other and bonded to each other. For example, the first and second bonding units 211 and 213 may include solder.

At least one of the first bonding portion 211 and the second bonding portion 213 may contact at least a part of the side surface of the light emitting diode chip 100. In one embodiment, at least one of the first bonding portion 211 and the second bonding portion 213 may cover at least a part of the side surface of the light reflective insulating layer 140 covering the side surface of the light emitting structure 120, Further, at least a part of the lower surface of the substrate 110 exposed at the periphery of the light emitting structure 120 can be covered, and furthermore, at least a part of the side surface of the substrate 110 can be further covered.

As such, at least one of the first bonding portion 211 and the second bonding portion 213 is formed to contact at least a part of the side surface of the LED chip 100, so that the first bonding portion 211, The shortest distance D2 between the first pad electrode 151 and the second pad electrode 153 may be smaller than the shortest distance D1 between the first pad electrode 151 and the second pad electrode 153. [ Therefore, even if D 1 is relatively small (for example, about 3 탆 to 20 탆), D 2 can be formed to be larger than D 1, thereby preventing electrical shorts from occurring during mounting of the light emitting diode chip 100. The first bonding portion 211 and / or the second bonding portion 213 are formed on the side of the light emitting structure 120 in a stable manner, Electrical contact does not occur even when the chip 100 contacts the side surface. In particular, since the light reflective insulating layer 140 is formed to extend to the exposed upper surface of the substrate 110, the side surface of the light emitting structure 120 can be more stably insulated, and the bonding portions 211 and 213, Electrical shorting is prevented through the side surface of the semiconductor substrate 120. In addition, the area of contact of the bonding parts 211 and 213 with the light emitting diode chip 100 increases, so that the light emitting diode chip 100 can be more stably mounted, and the mechanical stability of the light emitting device can be improved. The thickness of the bonding portions 211 and 213 interposed between the light emitting diode chip 100 and the second substrate 300 (that is, the distance between the light emitting diode chip 100 and the second substrate 300) It is possible to make the light emitting device more compact and slimmer.

5A and 10B are a plan view and a cross-sectional view illustrating a method of manufacturing the LED chip 100 according to another embodiment of the present invention.

A detailed description of the substantially same components as those described in the above embodiments will be omitted. In addition, in the drawings of the embodiments described later, a method of manufacturing two LED chips 100 is shown, but the present invention is not limited thereto. Even when a single LED chip 100 is manufactured and three or more LED chips 100 are formed on a large area wafer, the manufacturing method of the LED chip 100 according to embodiments Can be applied. In each of the figures, the L1 line is defined as the boundary of the unit element regions UD1. That is, the light emitting structures 120 on both sides may be separated from each other with respect to the L1 line to be fabricated as two light emitting diode chips 100. Further, each of the cross-sectional views shows a cross-section of a portion corresponding to line B-B 'in the corresponding plan view. For example, the cross section of the portion corresponding to the line B-B 'in Fig. 5A is shown in Fig. 5B.

Referring to FIGS. 5A and 5B, a light emitting structure 120 is formed on a substrate 100. The light emitting structure 120 can be grown using various generally known methods. For example, the light emitting structure 120 may be formed using a technique such as MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), or HVPE (Hydride Vapor Phase Epitaxy) . ≪ / RTI >

Next, referring to FIGS. 6A to 7B, at least one hole 120h and a contact electrode 130 are formed in the light emitting structure 120. FIG. Further, the light emitting structure 120 is partly removed to form an isolation groove 120i exposing the upper surface of the substrate 110. [

Specifically, first, referring to FIGS. 6A and 6B, a contact electrode 130 is formed on the light emitting structure 120.

The contact electrode 130 may be formed on the second conductive semiconductor layer 125 of the light emitting structure 120 to form an ohmic contact with the second conductive semiconductor layer 125. The contact electrode 130 may comprise a light transmissive conductive oxide and / or a light transmissive metal. For example, forming the contact electrode 130 may include forming ITO on the second conductivity type semiconductor layer 125 by using a deposition method such as sputtering and / or electron deposition. However, the present invention is not limited thereto. The formation of the contact electrode 130 may include forming various kinds of light-transmissive conductive oxides such as ZnO, and various manufacturing processes are applied depending on the kind of the conductive oxide .

7A and 7B, the light emitting structure 120 is patterned to form at least one groove 120h passing through the second conductive type semiconductor layer 125 and the active layer 123. Next, as shown in FIG. The light emitting structure 120 may be patterned to form an isolation groove (not shown) through the second conductive semiconductor layer 125, the active layer 123, and the first conductive semiconductor layer 121 to expose the upper surface of the substrate 110 120i. The patterning of the light emitting structure 120 can be performed, for example, using a dry etching and / or a wet etching process.

By the isolation groove 120i, the light emitting structure 120 is divided into a plurality of light emitting structures 120 located on each unit element region UD1. Therefore, the isolation groove 120i can be formed along the L1 line. In this manner, the isolation trench 120i is formed and the light emitting structure 120 is divided into a plurality of the light emitting structures 120 located on the plurality of unit element regions UD1, so that the substrate 110 and the light emitting structure 120 ) Can be relieved due to the difference in thermal expansion coefficient. Accordingly, it is possible to reduce the bowing of the wafer that occurs when the light emitting diode chip 100 is manufactured.

The contact electrode 130 may be patterned and patterning the contact electrode 130 may include forming a first opening 130a exposing at least one groove 120h. In addition, patterning the contact electrode 130 may further include forming a second opening 130b that partially exposes the second conductive type semiconductor layer 125. Patterning of the contact electrode 130 can be performed, for example, using a dry etching and / or a wet etching process.

In the above-described embodiment, the contact electrode 130 is formed first and the light emitting structure 120 is patterned. However, the present invention is not limited thereto. In various embodiments, the contact electrode 130 may be formed on the second conductive semiconductor layer 125 after the light emitting structure 120 is patterned first.

Next, referring to FIGS. 8A and 8B, a light reflective insulating layer 140 covering the upper surface and the side surface of the light emitting structure 120, including the third opening 140a and the fourth opening 140b, is formed.

Forming the light reflective insulating layer 140 may include forming distributed Bragg reflectors in which materials having different refractive indices are alternately stacked. For example, the formation of the light reflective insulating layer 140 may include alternately repeating deposition of a SiO ₂ layer and a TiO ₂ layer using a known deposition method such as sputtering. The formation of the light reflective insulating layer 140 is achieved by forming a distributed Bragg reflector covering the top and sides of the light emitting structure 120 and the isolation groove 120i and patterning the distributed Bragg reflector to form a third opening 140a and a fourth opening 140b and expose an upper surface of the substrate 110 in the isolation 120i groove. The light reflecting and insulating layer 140 covering the light emitting structure 120 of the one unit element region UD1 includes a light reflecting insulating layer 140 covering the light emitting structure 120 of the adjacent unit element region UD1, They are separated from each other.

9A and 9B, a first pad electrode 151 and a second pad electrode 153 may be formed on the light reflective insulating layer 140. Referring to FIG.

The first pad electrode 151 may be in contact with the first conductive semiconductor layer 121 through the third opening 140a of the light reflective insulating layer 140 and may be in ohmic contact. Similarly, the second pad electrode 153 may be in contact with and electrically connected to the contact electrode 130 through the fourth opening 140b of the light reflective insulating layer 140. The first and second pad electrodes 151 and 153 may be formed together in the same process and may be patterned through a photo / etch technique or a lift-off technique after being formed, for example, through a deposition and / have.

10A and 10B, it is possible to reduce the thickness of the substrate 110 by removing the portion 110a of the substrate 110. FIG. Thus, the thickness of the plurality of unit element regions UD1 can be made thinner by T1. Thereafter, by dividing the substrate 110 along the line L1, a plurality of light emitting diode chips 100 as shown in Figs. 1 to 3 can be provided.

Removing a portion 110a of the substrate 110 may include partially removing the substrate 110 through a physical and / or chemical method. For example, the substrate 110 may be partially removed using a method such as lapping, grinding, or the like. Reducing the thickness of the substrate 110 increases the stress by thinning the substrate 110 that supports the wafer while the wafer is bowed due to the difference in thermal expansion coefficient. Accordingly, the stress applied to the light emitting structure 120 increases, and the light emitting structure 120 is more likely to be damaged. However, according to the present embodiment, before the thickness of the substrate 110 is reduced, the isolation groove 120i for dividing the light emitting structure 120 into the plurality of light emitting structures 120 is formed to relax bouling, The damage of the light emitting structure 120, which may occur due to the reduction in the thickness of the substrate 110, can be prevented. In particular, due to the relatively small unit element regions UD1, the stress can be further reduced, and the thickness of each unit element region UD1 can be reduced to a thickness of about 90 mu m or less.

Dividing the substrate 110 along the L1 line may include separating the substrate 110 through a scribing and braking process. At this time, the scribing process may include internal processing of the substrate 110 using an internal machining laser (e.g., a stealth laser). At this time, if an internal processing laser is used, at least one modified region 111 having a strip shape extending in the horizontal direction may be formed on at least one side of the substrate 110.

According to the present embodiment, the isolation trenches 120i are formed along the L1 line, and the light reflective insulating layers 140 are spaced apart from each other to expose the isolation trenches 120i. Accordingly, since the light-reflective insulating layer 140 is not affected or damaged by laser or the like in the process of dividing the substrate 110, damage to the light-reflective insulating layer 140 by the light-reflective insulating layer 140 (for example, Peeling, breakage, etc.) is prevented. In particular, in the case where the light-reflective insulating layer 140 includes a distributed Bragg reflector, the light reflectance may be lowered if the light-reflective insulating layer 140 is damaged. According to the manufacturing method of the present embodiment, it is possible to prevent a decrease in luminous efficiency of the light emitting diode chip 100 manufactured due to the damage of the light reflective insulating layer 140.

The light emitting diode chip 100 and the light emitting device according to the above embodiments include a portion where the upper surface of the substrate 110 is exposed to reduce wafer bending in the manufacturing process of the light emitting diode chip 100. Accordingly, since the degree of wafer bake is relatively small, the thickness of the substrate 110 can be reduced as described above, and the yield of manufacturing the light emitting diode chip 100 can be improved. Therefore, a light-emitting diode chip 100 and a light-emitting device which are downsized, slim and highly reliable are provided. The light reflective insulating layer 140 is formed to cover the side surface of the light emitting structure 120 and extend to cover the exposed upper surface of the substrate 110, particularly, the protrusion 110p of the substrate 110, Emitting efficiency of the diode chip 100 can be improved. Also, since the bonding portions 211 and 213 can cover the side surface of the light emitting diode chip 100 through the light reflective insulating layer 140, the light emitting device can be downsized and the mechanical stability of the light emitting device can be improved have.

As described above, the light emitting device according to the embodiments is excellent in mechanical stability and luminous efficiency, and can be advantageously applied to portable electronic devices since it is downsized and slim. For example, the light emitting device or the light emitting diode chip 100 may be applied to a paper writing board requiring a thin thickness. As another example, when the light emitting device is applied to an input device such as a keyboard, the keypad may be positioned below the keypad of the light emitting device. In such an input device, the keypad is subjected to repeated external stresses (e.g., pressure for input). Also, portable input devices are required to be thin and small in size. The light emitting device according to the embodiments is small and slim, and is suitable for a slim portable input device. The light emitting device according to the embodiments is excellent in mechanical stability, so that the probability of a failure of the light emitting device due to the operation of the keyboard (for example, Is very small.

11A to 13 are a perspective view, a plan view, a sectional view, and a circuit diagram for explaining an electronic device according to another embodiment of the present invention. 12 is a sectional view for explaining each unit keypad 440u of the keypads 440 and FIG. 13 is a circuit diagram for explaining an example of the operation of the light emitting unit 460 according to the operation of the keypad 440u.

Referring to FIG. 11A, the electronic device 10 includes an input device 400. For example, the electronic device 10 may be a notebook computer, as shown in FIG. 11A, and the input device 400 may be a keyboard. The electronic device 10 may include a housing 12, a display 10, and an input device 400 constituting a basic frame. At this time, the input device 400 may be formed integrally with the electronic device 10. Meanwhile, in various embodiments, the input device 400 may be separate as well. As shown in FIG. 11B, the input device 400 may separately constitute an electronic device. However, the electronic device 10 of the present embodiment corresponds to an example, and the light emitting diode chip and / or the light emitting device of the present invention can be applied as long as the electronic device includes the input device 400. For example, various electronic devices such as a desktop computer, a detection device, a communication device, and the like including the input device 400 may be included in the present invention.

11A and 11B, the input device 400 includes a keypad 440 and a light emitting portion 460 and further includes a housing 12 or 410, an input structure 420, a backlight 430, As shown in FIG.

The housing 12 or 410 may constitute an outer frame of the input device 400 and serves to support the input structure 420, the backlight 430 and the keypad 440. The input structure 420 may serve to receive and transmit various input signals according to the control of the user's keypad 440. The input structure 420 may be located below the keypads 440 and may have a variety of known structures. The backlight 430 may illuminate the keypad 440 from below to enhance the visibility of the input device 400, such as a keyboard, and / or to provide additional functionality to the input device 400. The backlight 430 may include a light emitting diode chip and / or a light emitting device according to the above-described embodiments. The backlight 430 may be disposed to surround the keypads 440, or alternatively may be disposed below the keypads 440. However, the backlight 430 may be omitted.

In one embodiment, the light emitting portion 460 may be located below the keypad 440 of at least one of the plurality of keypads 440. At this time, the keypad 440 may include a light emitting region formed on the surface, and the light emitted from the light emitting portion 460 may be emitted through the light emitting region of the keypad 440. Referring to FIG. 12, the unit keypad 440 is positioned on the circuit board 411 and supported by the support unit 450. The circuit board 411 and the support 450 may be included in the input structure 420. When the user transmits a signal (e.g., pressure or touch input) to the keypad 440, The signal can be input through the circuit board 411. [ The light emitting portion 460 is located on the circuit board 411 and may be located under the keypad 440. [ The light emitting portion 460 can be turned on / off according to an input signal of the keypad 440. For example, as shown in FIG. 13, the switch SW _key can be turned on / off according to an input signal of the keypad 440, whereby the resistance R _key of the circuit is connected or opened, (460) is controlled. When the user presses the keypad 440 to input a signal, the light emitting unit 460 is operated in an ON state, so that the user can press the keypad 440 through the light emitting area of the keypad 440, Light can be emitted. However, the present invention is not limited thereto, and various embodiments are possible. In other embodiments, the light emitting unit 460 is kept in an on state, and when a user applies a pressure to the keypad 440 to input a signal, the light emitting unit 460 operates in an off state And the light emitting area of the keypad 440 may be turned on. In other embodiments, when the user applies a pressure to the keypad 440 to input a signal, the brightness of the light emitting portion 460 is varied to change the brightness of the light emitting region of the keypad 440, May be driven in such a manner as to vary.

The light emitting portion 460 positioned below the keypad 440 may include the light emitting diode chip and / or the light emitting device described in the above embodiments. Because of the slimness and miniaturization of the electronic device, a very thin thickness of the input device 400 is required, so that a small light emitting diode chip and / or a small light emitting device can be applied. Particularly, by applying the small light emitting diode chip and / or the small light emitting device of the present invention to an input device of an electronic device such as an input device such as a portable keyboard or a lightweight notebook, the volume of the electronic device It is possible to improve the portability of the electronic devices. The light emitting portion 460 located under the keypad 440 is subjected to continuous stress according to the input of the keypad 440 and the stress is transmitted to the light emitting device of the light emitting portion 460 or the light emitting diode chip 100 So that the light emitting portion 460 may be defective. However, since the input device 400 includes the light emitting diode chip 100 or the light emitting device according to the embodiments having excellent mechanical stability, it is possible to prevent the failure of the light emitting portion 460 due to the continuous operation of the keypad 440 .

In the above-described embodiments, the light emitting diode chip and / or the light emitting device according to various embodiments of the present invention are applied to the input device of the electronic device, but the present invention is not limited thereto. The light emitting diode chip and / or light emitting device may be applied to various other electronic devices requiring a small light emitting portion, and may be applied to, for example, a lighting device, a display device, and the like.

Claims (21)

A substrate including a plurality of protrusions formed on an upper surface thereof;
And a second conductivity type semiconductor layer disposed on the substrate and having a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, and an active layer disposed between the first and second conductivity type semiconductor layers, A light emitting structure including at least one hole penetrating the second conductivity type semiconductor layer and the active layer and exposing a part of the first conductivity type semiconductor layer;
A contact electrode at least partially located on the second conductivity type semiconductor layer, the contact electrode comprising a light-transmitting conductive oxide that is in ohmic contact with the second conductivity type semiconductor layer;
A first opening exposing the first conductive type semiconductor layer exposed through the hole, and a second opening partially exposing the contact electrode, the second opening including a distributed Bragg reflector A light-reflective insulating layer;
A first pad electrode located on the light reflective insulating layer and electrically connected to the first conductivity type semiconductor layer through the first opening; And
And a second pad electrode located on the light reflective insulating layer and electrically connected to the contact electrode through the second opening,
Wherein a part of the upper surface of the substrate is exposed to the periphery of the light emitting structure and the light reflecting insulating layer contacts the upper surface of the substrate exposed in the periphery of the light emitting structure, Light emitting diode chip.
The method according to claim 1,
Wherein the thickness of the light emitting diode chip is 40 占 퐉 or more and 90 占 퐉 or less.
The method according to claim 1,
Horizontal cross-sectional area of the LED chip ² is 30000㎛ 65000㎛ least ² than the light emitting diode chip.
The method according to claim 1,
The current density of the driving current of the LED chip is 7mA / mm ² or more 250mA / mm ² or less light emitting diode chip.
The method according to claim 1,
Wherein the sum of the areas of the first pad electrode and the second pad electrode is 80% or more and 95% or less of the horizontal area of the LED chip.
The method of claim 5,
And the shortest distance between the first pad electrode and the second pad electrode is 3 占 퐉 to 20 占 퐉.
The method according to claim 1,
Wherein a part of protrusions exposed on an upper surface of the substrate is covered with the light reflective insulating layer.
The method of claim 7,
And a remaining portion of the protrusions exposed on an upper surface of the substrate is exposed.
The method according to claim 1,
The contact electrode includes a third opening covering the upper surface of the second conductive semiconductor layer and exposing a hole of the light emitting structure and at least one fourth opening partially exposing the second conductive semiconductor layer Light emitting diode chip.
The method of claim 9,
Wherein a width of the fourth opening is smaller than a width of the second opening, and a portion of an upper surface of the contact electrode contacts the second pad electrode.
The method according to claim 1,
Wherein the substrate comprises a patterned sapphire substrate.
The method according to claim 1,
Wherein the first pad electrode is formed on an upper surface thereof and includes a concave portion corresponding to a position of the first opening,
Wherein the second pad electrode is formed on an upper surface thereof and includes a concave portion corresponding to a position of the second opening.
A second substrate;
A light emitting diode chip located on the second substrate; And
A first bonding portion and a second bonding portion positioned between the light emitting diode chip and the second substrate,
The light emitting diode chip includes:
A first substrate including a plurality of protrusions formed on a bottom surface thereof;
A second conductive type semiconductor layer disposed on the first substrate and positioned below the first conductive type semiconductor layer, a first conductive type semiconductor layer located on the second conductive type semiconductor layer, and a second conductive type semiconductor layer disposed between the first and second conductive type semiconductor layers And at least one hole penetrating through the second conductive type semiconductor layer and the active layer and exposing a part of the first conductive type semiconductor layer;
A contact electrode located at least partially below the second conductivity type semiconductor layer and ohmically contacting the second conductivity type semiconductor layer;
A first opening exposing the first conductive type semiconductor layer exposed through the hole and a second opening partially exposing the contact electrode, the first and second openings partially covering the side and the bottom of the light emitting structure, A light-reflective insulating layer;
A first pad electrode located below the light reflective insulating layer and electrically connected to the first conductive type semiconductor layer through the first opening; And
And a second pad electrode located below the light reflective insulating layer and electrically connected to the contact electrode through the second opening,
Wherein a part of the lower surface of the first substrate is exposed to the periphery of the light emitting structure and the light reflecting insulating layer contacts the lower surface of the first substrate exposed in the periphery of the light emitting structure, A reflective insulating layer,
Wherein the first bonding portion and the second bonding portion are electrically connected to the first and second pad electrodes, respectively.
14. The method of claim 13,
Wherein a shortest distance between the first and second bonding portions is larger than a shortest distance between the first and second pad electrodes.
14. The method of claim 13,
Wherein at least one of the first bonding portion and the second bonding portion at least partially covers a light reflective insulating layer covering a side surface of the light emitting structure.
15. The method of claim 14,
Wherein at least one of the first and second bonding portions at least partially covers the lower surface of the first substrate exposed in the periphery of the light emitting structure.
16. The method of claim 15,
And at least one of the first and second bonding portions at least partially covers a side surface of the first substrate.
The method of claim 12,
Wherein the first and second bonding portions include solders.
An electronic device comprising an input device,
An electronic device comprising any one of a light emitting diode chip according to any one of claims 1 to 12 and a light emitting device according to any one of claims 13 to 18.
The method of claim 19,
Wherein the input device includes a plurality of keypads,
Wherein the plurality of keypads include a light emitting region formed on an upper surface thereof, and light emitted from the light emitting region is light emitted from the light emitting diode chip or the light emitting device.
The method of claim 19,
Wherein the input device includes a plurality of keypads,
Wherein the plurality of keypads includes a light emitting area formed on an upper surface thereof, the light emitting diode chip is positioned under at least a part of the plurality of keypads,
Wherein the light emitted from the light emitting diode chip or the light emitting device is emitted through the light emitting region.

Images