KR20180003719A - Organic light emitting display device, head mounted display including the same and method for manufacturing the same - Google Patents

Abstract

According to an embodiment of the present invention, an organic light emitting display device, a head mounted display having the same, and a manufacturing method thereof are provided. The organic light emitting display device comprises: anode electrodes arranged on a substrate; and a non-conductor film arranged between the anode electrodes. The anode electrodes and the non-conductor film include a metal oxide and are evenly provided without a difference in level. Accordingly, the organic light emitting display device can prevent non-light emitting regions from being displayed as a lattice pattern.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting display, a head mounted display including the organic light emitting display, and a method of manufacturing the same. BACKGROUND ART < RTI ID = 0.0 >

An embodiment of the present invention relates to an organic light emitting display, a head mounted display including the same, and a method of manufacturing the same.

As the information society develops, there is a growing demand for display devices for displaying images. In recent years, various display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) have been used.

Of the display devices, the organic light emitting display device is a self-emitting type, and has a better viewing angle and contrast ratio than a liquid crystal display device (LCD), does not require a separate backlight and is lightweight and thin, . In addition, the organic light emitting display device is capable of being driven by a DC low voltage, has a high response speed, and is particularly advantageous in manufacturing cost.

The organic light emitting display includes an anode electrode, a bank for partitioning the anode electrodes, and a hole transporting layer, an organic light emitting layer, an electron transporting layer, and a hole transporting layer formed on the anode electrodes. And a cathode electrode formed on the electron transporting layer. Here, when a high potential voltage is applied to the anode electrode and a low potential voltage is applied to the cathode electrode, the holes and electrons are moved to the organic light emitting layer through the hole transporting layer and the electron transporting layer, respectively.

Recently, a head mounted display including an organic light emitting display has been developed. Head Mounted Display (HMD) is a virtual reality (VR) eyeglass type monitor that is worn in the form of a pair of glasses or a helmet to form a focus at a short distance in front of the user's eyes.

However, in the case of a display device whose viewing distance is close to that of the head mounted display, the grid pattern of the non-light emitting regions can be recognized by the user as shown in FIG.

Embodiments of the present invention provide an organic light emitting display, a head mounted display including the organic light emitting display, and a method of manufacturing the same, wherein the non-light emitting regions can be prevented from being viewed in a lattice pattern by deleting banks.

An organic light emitting display according to an exemplary embodiment of the present invention includes a substrate, an anode electrode disposed on the substrate, a nonconductive film disposed between the anode electrodes, a light emitting layer disposed on the anode electrode and the non- And a cathode electrode. In this case, the anode electrode and the non-conductive film contain a metal oxide and are provided flatly without a step.

A head-mounted display according to an exemplary embodiment of the present invention includes an organic light emitting diode (OLED) display device including a metal oxide and having an anode electrode and a non-conductive film provided stepwise, a display storage case for storing the OLED display device, And a left eye lens and a right eye lens disposed on one side and provided with an image of the organic light emitting display device.

A method of manufacturing an organic light emitting diode display according to an embodiment of the present invention includes the steps of providing an anode electrode and a non-conductive film disposed between the anode electrode on a substrate, providing a light emitting layer on the anode electrode and the non- And a cathode electrode on the light emitting layer, wherein the anode electrode and the non-conductive film include a metal oxide and are provided flatly without a step.

In the embodiment of the present invention, since the anode electrode and the non-conductive film include a metal oxide and are provided flatly without a step, it is possible to prevent a leakage current from being generated at the end of the anode electrode. Accordingly, the embodiment of the present invention can eliminate the banks and reduce the distance between the adjacent anode electrodes. As a result, the embodiment of the present invention can prevent the non-emission regions from being viewed in a lattice pattern, and can improve the resolution of the OLED display.

In addition, since the distance between the adjacent anode electrodes can be reduced, the aperture ratio of the display panel can be increased as compared with the related art in which the banks are provided.

In addition, by reducing the cell gap of the organic light emitting display panel according to the embodiment of the present invention, it is possible to prevent a color mixture defect between neighboring pixel areas and to reduce the thickness of the organic light emitting display panel.

In addition, since the anode contact hole and the drain contact hole are not overlapped with each other in the embodiment of the present invention, the top surface of the drain electrode exposed by the anode contact hole can have a flat surface. As a result, compared with the related art in which the anode contact hole and the drain contact hole are overlapped with each other, the anode electrode, the light emitting layer, and the cathode electrode provided on the drain electrode are provided so as to have a uniform thickness without being short- . As a result, the embodiment of the present invention can prevent the short-circuit between the anode electrode and the cathode electrode, and can prevent the lifetime of the organic light emitting display device from being lowered.

In addition to the effects of the present invention mentioned above, other features and advantages of the present invention will be described below, or may be apparent to those skilled in the art from the description and the description.

1 is an exemplary view showing a grid pattern of an image displayed by a conventional head mounted display.
FIG. 2 is a diagram illustrating an organic light emitting display according to an embodiment of the present invention. Referring to FIG.
FIG. 3 is a plan view showing a part of the display area of FIG. 2. FIG.
4 is a cross-sectional view showing a first example of I-I 'of FIG.
5 is an enlarged view showing the area A of FIG. 4 in detail.
6 is a cross-sectional view showing a second example of I-I 'of FIG.
7 is an enlarged view showing the area B in Fig. 6 in detail.
8 is a cross-sectional view showing a third example of I-I 'of FIG.
9A and 9B are illustrative drawings showing a head mounted display according to an embodiment of the present invention.
10 is an exemplary view showing an example of the display storage case of Fig.
Fig. 11 is an exemplary view showing an example of the display storage case of Fig. 9; Fig.
FIG. 12 is a flowchart illustrating a method of manufacturing the organic light emitting display according to FIG.
13A to 13E are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an example of FIG.
FIGS. 14A to 14C are cross-sectional views of an organic light emitting diode display for explaining step S101 according to another example of FIG.
FIGS. 15A to 15C are cross-sectional views for explaining a method of manufacturing the organic light emitting diode display of FIG.
16A to 16D are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an example of FIG.
17A to 17D are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to another example of FIG.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the organic light emitting diode display, the head mounted display including the same, and the method of manufacturing the same will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

FIG. 2 is a diagram illustrating an organic light emitting display according to an embodiment of the present invention. Referring to FIG. 2, the OLED display includes an OLED display panel 100, a gate driver 200, a display driver 310, and a flexible film 330 .

The organic light emitting display panel 100 includes a substrate 110 and a counter substrate 180. The substrate 110 may be a thin film transistor substrate. The counter substrate 180 may be a color filter substrate. The substrate 110 can be formed larger than the counter substrate 180 so that a part of the substrate 110 can be exposed without being covered by the counter substrate 180. [

Gate lines, data lines, and light emitting regions are formed in the display area DA of the organic light emitting display panel 100. [ The gate lines and the data lines are formed to cross each other. For example, the gate lines may be formed in a first direction (Y-axis direction), and the data lines may be formed in a second direction (X-axis direction). The light emitting regions are formed in the intersecting regions of the gate lines and the data lines. The light emitting regions of the display area DA display an image. A detailed description of the display area DA will be given later with reference to FIGS. 3 to 8. FIG.

The gate driver 200 supplies the gate signals to the gate lines according to the gate control signal input from the display driver 310. The gate driver 200 may be formed in a non-display area NDA outside the one side of the display area DA of the organic light emitting display panel 100 in a gate driver in panel (GIP) Display area NDA outside the one side of the display area DA of the organic light emitting display panel 100 by TAB (tape automated bonding) method.

The display driver 310 receives digital video data and timing signals from an external system board. The display driver 310 generates a gate control signal for controlling the operation timing of the gate driver 200 based on the timing signal and a source control signal for controlling supply of data voltages to the data lines. The display driver 310 supplies a gate control signal to the gate driver 200.

The display driver 310 converts the digital video data into analog data voltages according to the source control signal and supplies the analog data voltages to the data lines. When the display driver 310 is manufactured as a driving chip, the display driver 310 may be mounted on the flexible film 330 using a chip on film (COF) method or a chip on plastic (COP) method.

The size of the substrate 110 is larger than that of the counter substrate 180 so that a part of the substrate 110 can be exposed without being covered by the counter substrate 180. [ Pads may be formed on a part of the substrate 110 that is not covered by the counter substrate 180 and is exposed. The pads include data pads connected to the data lines and gate pads connected to the gate driver 200. The flexible film 330 may be formed with conductive wirings connecting the pads and the display driver 310. The flexible film 330 is attached to the pads using an anisotropic conducting film, whereby the conductive wirings of the flexible film 330 and the pads can be connected.

FIG. 3 is a plan view showing a part of the display area of FIG. 2. FIG. Referring to FIG. 3, a display area DA according to an embodiment of the present invention includes light emitting areas RE, GE, and BE and a non-light emitting area NEA.

The light emitting regions RE, GE, and BE emit predetermined light from the light emitting layer. The light emitting regions RE, GE, and BE may include a red light emitting region RE for emitting red light, a green light emitting region GE for emitting green light, and a blue light emitting region BE for emitting blue light. have. In this case, the red light-emitting region RE, the green light-emitting region GE, and the blue light-emitting region BE function as one pixel. The non-emission region NEA is provided at the rim of each of the emission regions GE, RE, and BE to define the emission regions GE, RE, and BE. The non-emission region NEA may be disposed on the non-emission region NEA according to an embodiment of the present invention. That is, the light emitting regions RE, GE, and BE can be partitioned by the non-conductive film.

The embodiment of the present invention has an effect of increasing the aperture ratio of the organic light emitting display panel as compared with the prior art in which the banks are provided since the non-conductive film divides the light emitting regions RE, GE, and BE. In addition, the cell gap of the organic light emitting display panel can be reduced as compared with the prior art in which the banks are provided. The organic light emitting display panel according to the present invention will be described in detail below with reference to FIGS. 4 to 7. FIG.

4 is a cross-sectional view showing a first example of I-I 'of FIG. 5 is an enlarged view showing the area A of FIG. 4 in detail.

4 and 5, the organic light emitting display panel 100 according to the first embodiment of the present invention includes a substrate 110, a transparent adhesive layer 170, and an opposite substrate 180. A passivation film 130, a planarization film 140, an organic light emitting diode 160, and a sealing film 155 are formed on the substrate 110.

The substrate 110 may be a glass substrate or a plastic substrate. For example, the substrate 110 may be made of a cellulose resin such as TAC (triacetyl cellulose) or DAC (diacetyl cellulose), a cycloolefin polymer (COP) such as Norbornene derivatives, a cyclo olefin copolymer (COC) (polyvinyl alcohol), polyether sulfone (PES), polyetheretherketone (PEEK), PEI (polyethylene terephthalate), and the like, such as acrylic resin, poly (methylmethacrylate), polycarbonate, PE (polyimide), a polysulfone (PSF), a fluoride resin, or the like, such as polyetheretherketone, polyetheretherketone, polyetheretherketone, polyetheretherketone, polyetheretherketone, polyetheretherketone It is not limited.

The thin film transistor 120 includes a semiconductor layer 121, a gate insulating film 122, a gate electrode 123, an interlayer insulating film 124, a source electrode 125 and a drain electrode 126. In FIG. 4, the gate electrode 123 is formed in an upper gate (top gate) structure located above the semiconductor layer 121, but it should be noted that the gate electrode 123 is not limited thereto. That is, the thin film transistors 120 may be formed by a bottom gate method in which the gate electrode 123 is located under the semiconductor layer 121 or a bottom gate method in which the gate electrode 123 is formed on the upper and lower portions of the semiconductor layer 121 And may be formed in a double gate manner.

The semiconductor layer 121 is provided on the substrate 110. The semiconductor layer 121 is disposed so as to overlap with the gate electrode 123. The semiconductor layer 121 may have one end region located on the source electrode 125 side, the other end region located on the drain electrode 126 side, and a center region located between the one end region and the other end region. The central region may be made of a semiconductor material not doped with a dopant, and the one end region and the other end region may be made of a semiconductor material doped with a dopant.

A buffer layer (not shown) may be additionally provided between the substrate 110 and the semiconductor layer 121. The buffer layer protects the semiconductor layer 121 and enhances the interfacial adhesion of the semiconductor layer 121. The buffer film may include a plurality of inorganic films.

The gate insulating film 122 is provided on the semiconductor layer 121. The gate insulating film 122 functions to insulate the semiconductor layer 121 from the gate electrode 123. The gate insulating layer 122 covers the semiconductor layer 121 and is formed on the entire surface of the display area DA. The gate insulating layer 122 may be formed of an inorganic insulating material, for example, silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or a multilayer thereof.

The gate electrode 123 is provided on the gate insulating film 122. The gate electrode 123 overlaps the semiconductor layer 121 with the gate insulating film 122 interposed therebetween. The gate electrode 123 may be formed of, for example, Mo, Al, Cr, Au, Ti, Ni, neodymium and copper. But is not limited to, a single layer or a multi-layer made of any one or an alloy thereof.

An interlayer insulating film 124 is provided on the gate electrode 123. The interlayer insulating film 124 is provided on the entire surface of the display area DA including the gate electrode 123. The interlayer insulating film 124 may be formed of the same inorganic insulating material as the gate insulating film 122, but is not limited thereto.

The source electrode 125 and the drain electrode 126 are disposed apart from each other on the interlayer insulating film 124. The source electrode 125 is connected to the one end region of the semiconductor layer 121 through the source contact hole CNT1 which penetrates the interlayer insulating film 124 and the gate insulating film 122 and exposes the semiconductor layer 121. [ The drain electrode 126 is connected to the other end region of the semiconductor layer 121 through the interlayer insulating film 124 and the drain contact hole CNT2 which penetrates the gate insulating film 122 and exposes the semiconductor layer 121. [ In this case, the source contact hole CNT1 and the drain contact hole CNT2 may be disposed under the planarizing film 140. [ Accordingly, the source contact hole CNT1 and the drain contact hole CNT2 may be provided so as not to overlap the anode contact hole CNT3 described later.

The source electrode 125 and the drain electrode 126 may be formed of a metal such as molybdenum, aluminum, chromium, gold, titanium, And copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

A passivation film 130 is provided on the thin film transistor 120. The passivation film 130 functions to protect the thin film transistor 120. The passivation film 130 may be formed of, for example, inorganic insulating materials such as silicon dioxide (SiNx), silicon nitride (SiNx), silicon oxynitride (SiON), or multilayers thereof.

The planarization film 140 is provided on the passivation film 130. The planarization layer 140 may be formed to cover both the upper surface and the side surfaces of the passivation layer 130. However, the present invention is not limited thereto, and the planarization layer 140 may be formed to cover only the upper surface of the passivation layer 130. The planarization layer 140 functions to flatten the top surface of the substrate 110 on which the thin film transistor 120 is formed. The planarization layer 140 may include an organic insulating material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, ), But the present invention is not limited thereto.

The passivation film 130 and the planarization film 140 are provided with an anode contact hole CNT3 for exposing the drain electrode 126 of the thin film transistor 120. [ The anode contact hole CNT3 is provided at a position overlapping the semiconductor layer 121, the gate insulating film 122, the interlayer insulating film 124, and the drain electrode 126. [ Also, the anode contact hole CNT3 is provided so as not to overlap with the drain contact hole CNT2. Accordingly, the upper surface of the drain electrode 126 exposed by the anode contact hole CNT3 may have a flat surface. An anode electrode 161 is provided on the anode contact hole CNT3.

The organic light emitting diode 160 is provided on the planarization layer 140. The organic light emitting device 160 includes an anode electrode 161, a light emitting layer 167, and a cathode electrode 169.

The anode electrode 161 is provided on the planarization film 140. The anode electrode 161 is disposed in the light emitting regions RE, GE, and BE of the organic light emitting display panel 100. The anode electrode 161 is connected to the drain electrode 126 through the anode contact hole CNT3 through the planarization layer 140 to expose the drain electrode 126. [ In this case, since the top surface of the drain electrode 126 is flat, the anode electrode 161 provided on the drain electrode 126 can be provided so as to have a uniform surface without being short-circuited.

The non-conductive layer 162 may be provided between the adjacent anode electrodes 161. The non-conductive film 162 separates the anode electrodes 161. The anode electrode 161 and the non-conductive film 162 include a metal oxide. The metal oxide constituting the anode electrode 161 and the non-conductive film 162 may be, for example, indium gallium zinc oxide (IGZO), indium gallium oxide (IGO), indium tin zinc oxide (ITZO), zinc oxinitride IZO (indium zinc oxide) or IXZO (X = Ti, Ta, Hf, Zr). The anode electrode 161 and the non-conductive film 162 may be formed by applying any one of the materials described above on the planarization film 140, implanting impurities, and conducting or nonconducting the same.

The non-conductive layer 162 may extend from the anode electrode 161 and may be disposed in the non-emission region NEA of the organic light emitting display panel 100. The anode electrode 161 and the non-conductive film 162 are in contact with each other. In this case, a step may not be generated in the boundary BA between the anode electrode 161 and the non-conductive film 162. That is, the anode electrode 161 and the non-conductive film 162 can be provided flatly without a step.

Since the anode electrode 161 and the non-conductive film 162 are provided flatly without a step, current leakage can be prevented from occurring at the end portion of the anode electrode 161. In addition, Accordingly, the embodiment of the present invention can delete the bank.

A supplementary anode electrode 163 may be further provided under the anode electrode 161. The auxiliary anode electrode 163 may be provided to have the same width as the anode electrode 161. In this case, the side surface 163a of the auxiliary anode electrode 163 is covered with the non-conductive film 162. [ The auxiliary anode electrode 163 may be composed of at least one layer including a metal material having excellent reflection efficiency, for example, aluminum (Al), silver (Ag), APC (Ag; Pb; Cu)

Since the side surface 163a of the auxiliary anode electrode 163 is covered with the non-conductive film 162, leakage current (current) flows to the side surface 163a of the auxiliary anode electrode 163 without the bank current leakage can be prevented from occurring.

A method of manufacturing the above-described anode electrode 161 and the non-conductive film 162 will be described later with reference to FIGS. 12 to 17. FIG.

The light emitting layer 167 is provided on the anode electrode 161 and the non-conductive film 162. In this case, the light emitting layer 167 is also provided on the anode electrode 161 provided in the anode contact hole CNT3. The light emitting layer 167 may include a hole transporting layer, an organic light emitting layer, and an electron transporting layer. Further, the light emitting layer 167 may further include at least one functional layer for improving light emitting efficiency and / or lifetime of the light emitting layer.

The light emitting layer 167 may include only a white light emitting layer that emits white light. In this case, the white light emitting layer may be formed on the entire surface of the display area DA, but is not limited thereto.

The cathode electrode 169 is provided on the light emitting layer 167 so as to cover the light emitting layer 167. In this case, the cathode electrode 169 may also be provided on the light emitting layer 167 provided on the anode contact hole CNT3. When a voltage is applied to the anode electrode 161 and the cathode electrode 169, holes and electrons move to the organic light emitting layer through the hole transporting layer and the electron transporting layer, respectively.

The organic light emitting diode display according to the exemplary embodiment of the present invention may be implemented as a top emission scheme. In the upper emission type, the light emitted from the light emitting layer 167 emits in the direction of the opposite substrate 180, so that the thin film transistors 120 can be provided broadly below the anode electrode 161 and the non-conductive film 162. That is, the upper light emitting method has an advantage that the thin film transistors 120 have a wider design area than the bottom emission method. Further, in the top emission type, the light emitted from the light emitting layer 167 emits in the direction of the counter substrate 180, so that the cathode electrode 169 may be formed of a transparent metal material such as ITO or IZO, Mg), silver (Ag), or a semitransparent metal material such as magnesium (Mg) and silver (Ag).

The sealing film 155 is provided on the cathode electrode 169. The sealing film 155 functions to prevent oxygen or moisture from permeating into the light emitting layer 167 and the cathode electrode 169. For this purpose, the sealing film 155 may comprise at least one inorganic film and at least one organic film. However, the present invention is not limited thereto, and the sealing film 155 may not be provided on the cathode electrode 169. In this case, the transparent adhesive layer 170 prevents the penetration of oxygen or moisture into the light emitting layer 167 and the cathode electrode 169 in place of the sealing film 155, and has a function of flattening the top of the substrate 110 .

A transparent adhesive layer 170 is provided between the substrate 110 and the counter substrate 180. The substrate 110 and the counter substrate 180 are bonded together by a transparent adhesive layer 170. The transparent adhesive layer 170 may be a transparent adhesive resin.

Color filters (CF) are provided on the counter substrate 180. The color filters RC, GC, and BC are provided on one surface of the counter substrate 180 facing the substrate 110. The color filters RC, GC, and BC are used to implement color in the organic light emitting display panel 100. The light emitted from the organic light emitting diode 160 passes through the color filters RC, GC and BC and is emitted upward.

On the counter substrate 180, a polarizing plate 185 may be further attached. The polarizing plate 185 prevents external light from being reflected to the user by the cathode electrode 169 and the anode electrode 161 of the substrate 110. [ That is, in the embodiment of the present invention, by attaching the polarizing plate 185 on the counter substrate 180, it is possible to prevent the visibility of the image displayed by the light emitting regions RE, GE, and BE due to external light from being lowered have.

In addition, the counter substrate 180 may be provided with a black matrix. A black matrix (Black Matrix) is located between the color filters (RC, GC, BC). The Black Matrix performs the function of separating or blocking the light of color filters (RC, GC, BC). The black matrix is disposed in the non-emission area NEA of the organic light emitting display panel 100. That is, the black matrix is arranged so as to face the non-conductive film 162. In this case, the width of the black matrix may be equal to or less than the width of the non-conductive film 162.

An overcoat layer for flattening the counter substrate 180 may be provided between the color filters RC, GC, and BC and the transparent adhesive layer 170 on the counter substrate 180. Also, a column spacer may be formed on the overcoat layer to maintain a constant cell gap between the substrate 110 and the counter substrate 180. However, the present invention is not limited thereto, and the transparent adhesion layer 170 may replace the overcoat layer and the column spacer to perform the function of maintaining the cell gap between the substrate 110 and the counter substrate 180 .

The conventional organic light emitting display has a limitation in reducing the distance between the anode electrodes due to the width and the thickness of the banks and has a limitation in reducing the cell gap of the display panel. Accordingly, when the conventional organic light emitting display device is applied to a display device requiring high resolution, the non-light emitting regions may be displayed in a lattice pattern due to the bank. In order to prevent this, when a bank is erased, a current may be concentrated at the end of the anode electrode, which may shorten the lifetime of the device.

However, in the first example of the present invention, since the non-conductive film 162 is provided between the anode electrodes 161 and the anode electrode 161 and the non-conductive film 162 are provided flatly with no step, It is possible to prevent a leakage current from being generated at the end portion of the semiconductor device. Accordingly, the first example of the present invention can delete the banks and reduce the distance between the adjacent anode electrodes 161. [ As a result, the first example of the present invention can prevent the non-luminescent regions from being displayed in a lattice pattern and improve the resolution of the OLED display.

In addition, since the first example of the present invention can reduce the distance between the adjacent anode electrodes 161, the aperture ratio of the display panel can be increased as compared with the conventional art in which the banks are provided.

In addition, the first example of the present invention can reduce the cell gap of the organic light emitting display panel, thereby preventing the color mixture defect occurring between neighboring pixel areas and slimming the thickness of the organic light emitting display panel.

In the first example of the present invention, since the anode contact hole CNT3 and the drain contact hole CNT2 do not overlap with each other, the upper surface of the drain electrode 126 exposed by the anode contact hole CNT3 has a flat surface Lt; / RTI > The first embodiment of the present invention is different from the prior art in which the anode contact hole CNT3 and the drain contact hole CNT2 are overlapped with each other, the anode electrode 161, the light emitting layer 183 And the cathode electrode 185 may be provided so as to have a uniform thickness without being short-circuited. As a result, the first example of the present invention can prevent a short contact between the anode electrode 161 and the cathode electrode 169, and can prevent the lifetime of the organic light emitting display device from being lowered.

6 is a cross-sectional view showing a second example of I-I 'of FIG. 7 is an enlarged view showing the area B in Fig. 6 in detail. 4 and 5, except that the anode electrode 161 and the non-conductive film 162 are provided on the anode contact hole CNT3. Is the same as the first example of the invention. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

6 and 7, the anode electrode 161 according to the second exemplary embodiment of the present invention is electrically connected to the drain electrode (not shown) through the anode contact hole CNT3 that exposes the drain electrode 126 through the planarization layer 140 126. The non-conductive film 162 separates neighboring anode electrodes 161 from each other. In this case, both the anode electrode 161 and the non-conductive film 162 may be provided on the anode contact hole CNT3.

Specifically, the anode electrode 161 according to the second example includes a first electrode portion 161a and a second electrode portion 161b. The first electrode part 161a is provided in the light emitting area GE. The second electrode portion 161b extends from the first electrode portion 161a and is provided in the non-emission region NEA. The second electrode portion 161b is disposed on the anode contact hole CNT3 and connected to the drain electrode 126 through the anode contact hole CNT3. The second electrode portion 161b is thinner than the first electrode portion 161a. Accordingly, a step X may be generated between the first electrode unit 161a and the second electrode unit 161b.

The non-conductive film 162 according to the second example includes a first non-conductive film 162a and a second non-conductive film 162b. The first non-conductive film 162a and the second non-conductive film 162b are disposed in the non-light emitting region NEA. The first insulating layer 162a is provided on the planarization layer 140 and contacts the planarization layer 140. The second non-conductive film 162b extends from the first non-conductive film 162a and is disposed on the anode contact hole CNT. And the second non-conductive film 162b is provided on the second electrode portion 161b. And the second non-conductive film 162b overlaps the second electrode portion 161b. The second non-conductive film 162b covers one side 161c of the first electrode portion 161a. The second non-conductive film 162b is formed thinner than the first non-conductive film 162b. In this case, the thickness of the second non-conductor film 162b may be the same as the step X between the first electrode portion 161a and the second electrode portion 161b. Thus, the upper surface of the anode electrode 161 and the upper surface of the non-conductive film 162 can be provided flatly without a step.

The light emitting layer 167 is provided on the anode electrode 161 and the non-conductive film 162 and the cathode electrode 169 is provided on the light emitting layer 167 so as to cover the light emitting layer 167. Accordingly, the anode electrode 161, the non-conductive film 162, the light emitting layer 167, and the cathode electrode 169 are sequentially disposed on the anode contact hole CNT3.

The second example of the present invention provides the same effect as the organic light emitting display according to the first example of the present invention. That is, in the second example of the present invention, the thickness of the second non-conductor film 162b is the same as the step X between the first electrode portion 161a and the second electrode portion 161b, The anode electrode 161 and the non-conductive film 162 can be flatly provided without a step because they cover one side 161c of the first electrode portion 161a. As a result, the second example of the present invention can prevent the leakage current from being generated at the end of the anode electrode 161 while removing the bank.

Since the anode electrode 161, the non-conductive film 162, and the cathode electrode 169 are sequentially formed on the anode contact hole CNT3 in the second example of the present invention, the anode electrode 161 and the cathode electrode It is possible to more effectively prevent a short contact between the anode electrode 161 and the cathode electrode 169 as compared with the first example where the non-conductive film 162 is not provided between the anode electrode 161 and the cathode electrode 169. Accordingly, the second example of the present invention can more effectively prevent the lifetime of the organic light emitting display device from being lowered.

8 is a cross-sectional view showing a third example of I-I 'of FIG. The organic light emitting diode display according to the third example of the present invention has the same structure as that of the present invention described with reference to FIGS. 4 and 5, except that a short prevention member 157 is additionally provided on the anode contact hole CNT3. This is the same as the first example. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

Referring to FIG. 8, on the anode electrode 161 according to the third embodiment of the present invention, a short prevention member 157 is provided. The short-circuit prevention member 157 prevents shorts caused by the contact between the anode electrode 161 and the cathode electrode 169. [ To this end, the short prevention member 157 is provided at a position corresponding to the anode contact hole CNT3. The short prevention member 157 is provided so as to cover the anode contact hole CNT3. The short prevention member 157 is filled in the anode contact hole CNT3.

The short-circuit prevention member 157 according to one example can be filled in the anode contact hole CNT3. When the short prevention member 157 is filled in the anode contact hole CNT3, the short prevention member 157 may be provided so as to cover the anode contact hole CNT3 and convexly. Alternatively, the upper surface of the short-circuit prevention member 157 and the upper surface of the anode electrode 161 may be provided flatly without a step. However, the present invention is not limited to this, and the short prevention member 157 may be filled only in a part of the anode contact hole CNT3. The top surface of the short prevention member 157 may be provided at a lower position than the top surface of the anode electrode 161 when the short prevention member 157 is filled only in a part of the anode contact hole CNT3.

The short prevention member 157 may be formed of an organic insulating material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, resin and the like. However, the present invention is not limited thereto, and the short-circuit prevention member 157 may be formed of an inorganic insulating material such as silicon dioxide (SiNx), silicon nitride (SiNx), or silicon oxynitride (SiON).

An insulator film (162) is provided between the anode electrodes (161). The anode electrode 161 and the non-conductive film 162 can be provided flatly without a step. The light emitting layer 167 is provided on the anode electrode 161 and the non-conductive film 162, and the cathode electrode 169 is provided on the light emitting layer 167. In this case, the light emitting layer 167 and the cathode electrode 169 may be provided to cover the short-circuit prevention member 157 provided on the anode contact hole CNT3. Accordingly, the anode electrode 161, the short-circuit prevention member 157, the light emitting layer 167, and the cathode electrode 169 may be sequentially arranged on the anode contact hole CNT3 according to the third embodiment of the present invention.

The third example of the present invention provides the same effect as the organic light emitting display according to the first example of the present invention. Since the third embodiment of the present invention is provided with the shot preventing area 157 between the anode electrode 161 and the cathode electrode 169 as compared with the first example in which the shot preventing site 157 is not provided, It is possible to further prevent a short contact between the electrode 161 and the cathode electrode 169. Accordingly, the third example of the present invention can more effectively prevent the lifetime of the organic light emitting display device from being lowered.

9A and 9B are illustrative drawings showing a head mounted display according to an embodiment of the present invention. 9A and 9B, a head mounted display (HMD) according to an embodiment of the present invention includes a display housing case 10, a left eye lens 20a and a right eye lens 20b, and a head mounting band 30 .

The display housing case 10 accommodates the display device and provides images of the display device to the left eye lens 20a and the right eye lens 20b. The display device may be an OLED display according to an embodiment of the present invention. An organic light emitting display according to an embodiment of the present invention has been described in detail with reference to FIGS. 2 to 8. FIG.

The display housing case 10 can be designed to provide the same image to the left eye lens 20a and the right eye lens 20b. Alternatively, the left eye image may be displayed on the left eye lens 20a and the right eye image may be displayed on the right eye lens 20b.

10, a left-eye OLED display 12 disposed in front of the left-eye lens 20a and a right-eye OLED display 11 disposed in front of the right-eye lens 20b are accommodated in the display housing case 10 . 10 is a cross-sectional view of the display storage case 10 when viewed from above. The left-eye OLED display 12 displays the left-eye image, and the right-eye OLED display 11 displays the right-eye image. Thus, the left-eye image displayed on the left-eye OLED display 12 is displayed on the left-eye 40 of the user through the left-eye lens 20a. Further, the right-eye image displayed on the right-eye OLED display 11 can be seen through the right-eye lens 20b in the user's right eye 50. [

11, a mirror reflector 13 disposed in front of the left eye lens 20a and the right eye lens 20b and an organic light emitting display 14 disposed on the mirror reflector 13 are housed in the display housing case 10, . 11 is a cross-sectional view of the display storage case 10 when viewed from the side. The OLED display 14 displays an image in the direction of the mirror reflector 13 and the mirror reflector 13 reflects the image of the organic light emitting display 14 in the direction of the left eye lens 20a and the right eye lens 20b. do. Thus, the image displayed on the organic light emitting display device 14 can be provided to the left eye lens 20a and the right eye lens 20b. In Fig. 11, only the left eye lens 20a and the user's left eye 40 are shown for convenience of explanation.

A left eye lens 20a and a right eye lens 20b are disposed on one side of the display case 10. The left eye lens 20a and the right eye lens 20b are formed so as to be able to see through the display case 10. The left eye of the user may be located on the left eye lens 20a, and the right eye of the user may be located on the right eye lens 20b.

Each of the left eye lens 20a and the right eye lens 20b may be a convex lens. In this case, the image displayed on the display storage case 10 due to the left eye lens 20a and the right eye lens 20b can be enlarged to the user. Alternatively, each of the left eye lens 20a and the right eye lens 20b may not have a function for enlarging or reducing an image displayed on the display storage case 10. [

The head mounting band 30 is fixed to the display case 10. The head mounting band 30 is formed so as to surround the top and both sides of the head of the user, but the present invention is not limited thereto. The head mounting band 30 is for fixing the head mounted display to the user's head, and may be formed in the form of an eyeglass frame or a helmet.

On the other hand, in the case of a display apparatus having a viewing distance close to that of a conventional head mounted display, a grid pattern of non-light emitting regions can be recognized by the user as in FIG.

However, in the head mounted display according to the embodiment of the present invention, since the banks are eliminated, the distance between the adjacent anode electrodes can be reduced. Therefore, the head mounted display according to the embodiment of the present invention can prevent the non-light emitting regions of the organic light emitting display from being viewed in a lattice form. Further, the head-mounted display according to the embodiment of the present invention can reduce the cell gap of the organic light emitting display panel as the banks are deleted. Accordingly, the head mounted display according to the embodiment of the present invention can prevent a color mixture defect occurring between neighboring pixel regions.

While the present invention has been described with reference to the head mounted display in the embodiments of the present invention, the organic light emitting display device described above can be applied to various display devices requiring high resolution, such as a mobile display device.

FIG. 12 is a flowchart illustrating a method of manufacturing the organic light emitting display according to FIG. 13A to 13E are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an example of FIG. Hereinafter, a method of manufacturing an organic light emitting display device according to an example will be described with reference to FIG. 12 and FIGS. 13A to 13E.

First, a thin film transistor 120, a passivation film 130, and a planarization film 140 are sequentially formed on a substrate 110 as shown in FIG. 13A. Next, an anode contact hole CNT3 is formed to expose the drain electrode 126 of the thin film transistor 120 to the passivation film 130 and the planarization film 140. Next, Next, the auxiliary anode electrode 163 is formed so as to be connected to the drain electrode 126 through the anode contact hole CNT3. Next, a metal oxide 164 having conductivity is coated on the planarization film 140 and the auxiliary anode electrode 163. Next, the photoresist 154 is coated on the metal oxide 164 having conductivity.

The metal oxide 164 having conductivity according to an exemplary embodiment of the present invention may be formed of indium gallium zinc oxide (IGZO), indium gallium oxide (IGO), indium tin zinc oxide (ITZO), zinc oxinitride (ZON) (indium zinc oxide) or IXZO (X = Ti, Ta, Hf, Zr). The conductive metal oxide 164 can be obtained by controlling the composition ratio of the oxides contained in the above-mentioned materials. For example, when IGZO is used as the metal oxide 164, the content of indium oxide (In 2 O 3) and zinc oxide (ZnO) is higher than that of gallium oxide (Ga 2 O 3) Can be used.

Secondly, as shown in FIG. 13B, a photoresist pattern 154a is formed using a photomask, and impurities are implanted into the metal oxide 164 using the photoresist pattern 154a as a mask. In this case, impurities are not implanted into the metal oxide 164 disposed in the region where the photoresist pattern 154a is provided, and impurities are not added to the metal oxide 164 disposed in the region where the photoresist pattern 154a is not provided. . As a method of implanting the impurity into the metal oxide 164, ion implantation may be used. In this case, an oxygen ion (O2 ion) may be used as the impurity. When the oxygen ion (O2 ion) is injected into the metal oxide 164 having conductivity, the oxygen concentration increases in the metal oxide 164. Accordingly, the metal oxide 164 may have insulating properties.

Third, the photoresist pattern 154 is removed as shown in FIG. 13C. In this case, the metal oxide 164 having conductivity can be used as the anode electrode 161 because no impurity is implanted. Further, the metal oxide 164 having an insulating property by implanting impurities can be used as the non-conductive film 162. The anode electrode 161 is disposed in the light emitting regions RE, GE, and BE on the substrate 110, and the non-conductive film 162 may be disposed in the non-emitting region NEA.

In the embodiment of the present invention, the anode electrode 161 and the non-conductive film 162 are provided using the photoresist as a mask, but the present invention is not limited thereto. That is, instead of the photoresist, the anode electrode 161 and the non-conductive film 162 may be provided using an inorganic insulating film such as a silicon oxide film as a mask. (S101 in Fig. 12)

Fourth, a light emitting layer 167 and a cathode electrode 169 are sequentially formed on the anode electrode 161 and the non-conductive film 162, as shown in FIG. 13D. Next, an encapsulating film 155 is formed on the cathode electrode 169. (S102 and S103 in Fig. 12)

13E, color filters RC, GC, and BC are formed on the counter substrate 180, and the counter substrate 180 and the substrate 110 are adhered to each other by using the transparent adhesive layer 170. FIG.

FIGS. 14A to 14C are cross-sectional views of an organic light emitting diode display for explaining step S101 according to another example of FIG. The manufacturing method of the OLED display according to another example of the present invention is the same as the manufacturing method of the OLED display according to the exemplary embodiment of the present invention, except for step S101 of FIG. Therefore, in the following, step S101 according to another example will be described in connection with FIG. 12, FIG. 14A to FIG. 14C.

First, as shown in FIG. 14A, a thin film transistor 120, a passivation film 130, a planarization film 140, and a supplementary anode electrode 163 are formed on a substrate 110. Next, the metal oxide 165 and the photoresist 154, which do not have conductivity, are coated on the planarization film 140 and the auxiliary anode electrode 163. That is, in another example of the present invention, metal oxide 165 having an insulating property may be applied on the planarization film 140. [

The metal oxide 165 having an insulating property according to another example of the present invention may be an indium gallium zinc oxide (IGZO), an indium gallium oxide (IGO), an indium tin zinc oxide (ITZO), a zinc oxinitride (ZON) (indium zinc oxide) or IXZO (X = Ti, Ta, Hf, Zr). The metal oxide 165 having an insulating property can be obtained by controlling the composition ratio of the oxides included in the above-mentioned materials. For example, when IGZO is used as the metal oxide 165 according to another exemplary embodiment of the present invention, gallium oxide (Ga 2 O 3) rather than indium oxide (In 2 O 3) and zinc oxide (ZnO) IGZO having high insulating properties can be used.

Secondly, as shown in FIG. 14B, a photoresist pattern 154a is formed using a photomask. In this case, the photoresist disposed in the light emitting regions RE, GE, and BE is removed, and the photoresist disposed in the non-emitting region NEA is left. Next, impurities are implanted into the metal oxide 165 using the photoresist pattern 154a as a mask. In this case, impurities are not implanted into the metal oxide 165 disposed in the non-emission region NEA provided with the photoresist pattern 154a. However, impurities are implanted into the metal oxide 165 disposed in the light emitting regions RE, GE, and BE without the photoresist pattern 154a.

A hydrogen ion (H2 ion) may be used as the impurity according to another example of the present invention. When hydrogen ion (H2 ion) is injected into the metal oxide 165 having an insulating property, it is bonded with oxygen contained in the metal oxide 165. As a result, the oxygen concentration of the metal oxide 165 is reduced, so that the metal oxide 165 having conductivity can be provided.

Third, the photoresist pattern 154a is removed as shown in Fig. 14C. In this case, the impurity is not implanted, so that the metal oxide 165 having an insulating property can be used as the non-conductive film 162. In addition, a metal oxide 165 having an impurity implanted therein and having conductivity may be used as the anode electrode 161.

FIGS. 15A to 15C are cross-sectional views for explaining a method of manufacturing the organic light emitting diode display of FIG. The manufacturing method of the OLED display of FIG. 6 is the same as the manufacturing method of the OLED display of FIGS. 12 and 13 except for forming the anode electrode and the non-conductive layer. Therefore, in the following, the steps of forming the anode electrode and the non-conductive film of FIG. 6 by referring to FIGS. 15A to 15C will be described.

First, as shown in FIG. 15A, a thin film transistor 120, a passivation film 130, a planarization film 140, and a supplementary anode electrode 163 are sequentially formed on a substrate 110. Next, a conductive metal oxide 164 and a photoresist 154 are coated on the planarization film 140 and the auxiliary anode electrode 163.

Second, as shown in FIG. 15B, a photoresist pattern 154a is formed using a half tone mask. In this case, among the photoresists arranged in the non-emission region NEA, the photoresist provided in the first region A1, in which the auxiliary anode electrode 163 is not provided, is all removed. In addition, part of the photoresist disposed on the second region A2 provided with the auxiliary anode electrode 163 among the photoresists arranged in the non-emission region NEA is partially left. Further, all of the photoresists disposed in the light emitting regions GE, BE are left.

Next, impurities are implanted into the metal oxide 165 using the photoresist pattern 154a as a mask. In this case, impurities are not implanted into the metal oxide 165 disposed in the light emitting regions GE and BE, and impurities are implanted into the metal oxide 165 disposed in the non-emitting region NEA. Particularly, in the second region A2 of the non-emission region NEA, since the photoresist pattern is formed thin, impurities are injected only into the upper portion of the metal oxide 165. [ Accordingly, the upper portion of the metal oxide 165 disposed in the second region A2 has insulating property, and the lower portion can have conductivity.

Third, the photoresist pattern 154a is removed as shown in Fig. 15C. In this case, the metal oxide 164 having conductivity can be used as the first electrode portion 161a because no impurity is implanted. The first electrode portion 161a may be disposed on the light emitting regions RE, GE, and BE on the substrate 110. [ The second region A2 of the non-emission region NEA may include a second non-conductive layer 162b having an insulation property and a second electrode portion 161b having conductivity. Here, the second region A2 may be a region overlapping the anode contact hole CNT3. Further, the metal oxide 164 having an impurity implanted with impurities may be used as the first non-conductive film 162a. The first non-light emitting region 162b may be disposed in the first region A1 of the non-light emitting region NEA.

16A to 16D are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an example of FIG. The manufacturing method of the OLED display according to the example of FIG. 8 is the same as the manufacturing method of the OLED display device described with reference to FIGS. 12 and 13, except that the short-circuit prevention member 157 is additionally provided. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

First, as shown in FIG. 16A, metal oxide 164 having conductivity is coated on the planarizing film 140 and the auxiliary anode electrode 163. Next, the photoresist 154 is coated on the metal oxide 164 having conductivity.

Secondly, as shown in FIG. 16B, a photoresist pattern 154a is formed using a photomask. Next, impurities are implanted into the metal oxide 164 using the photoresist pattern 154a as a mask.

Thirdly, as shown in FIG. 16C, the photoresist pattern 154a is removed to form the anode electrode 161 and the non-conductive film 162. Next, as shown in FIG. In this case, the photoresist pattern arranged to correspond to the anode contact hole CNT3 is not removed. According to one example of the present invention, a photoresist pattern that has not been removed is used as a short-circuit prevention member 157 for preventing a short circuit caused by contact between the anode electrode 161 and the cathode electrode 169 . Accordingly, the short-circuit prevention member 157 may be filled in the anode contact hole CNT3 to cover the anode contact hole CNT3.

16D, a light emitting layer 167, a cathode electrode 169, and a sealing film 155 are sequentially formed on the anode electrode 161, the non-conductive film 162, and the short-circuit prevention member 157. Then, Next, color filters are formed on the counter substrate 180, and the counter substrate 180 and the substrate 110 are adhered to each other using a transparent adhesive layer 170.

17A to 17D are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to another example of FIG. The manufacturing method of the organic light emitting display according to another example of FIG. 8 is the same as the manufacturing method of the organic light emitting display device described with reference to FIGS. 12 and 14, except that the shot preventing member 157 is additionally provided. Therefore, the same reference numerals are assigned to the same components, and repetitive descriptions of the repetitive portions in the materials, structures, etc. of the respective components are omitted.

First, as shown in FIG. 17A, a metal oxide 165 having an insulating property is coated on the planarization film 140 and the auxiliary anode electrode 163. Next, the photoresist 154 is coated on the metal oxide 165 having an insulating property.

Secondly, as shown in FIG. 17B, a photoresist pattern 154a is formed using a photomask. Next, impurities are implanted into the metal oxide 165 using the photoresist pattern 154a as a mask.

Thirdly, as shown in FIG. 17C, the photoresist pattern 154a is completely removed to form the anode electrode 161 and the non-conductive film 162, and the anode electrode 161 provided at the position corresponding to the anode contact hole CNT3 The short-circuit prevention member 157 is formed on the base member 161.

17D, the light emitting layer 167, the cathode electrode 169, and the sealing film 155 are sequentially formed on the anode electrode 161, the non-conductive film 162, and the short-circuit prevention member 157, The counter substrate 180 and the substrate 110 are bonded together using the transparent adhesive layer 170. [

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

100: organic light emitting display panel 110: substrate
120: Thin film transistor 130: Passivation film
140: planarization film 155: sealing film
160: organic light emitting element 161: anode electrode
162: non-conductive film 167: light emitting layer
169: cathode electrode 170: transparent adhesive layer
180: counter substrate 185: polarizer
200: Gate driver 310: Display driver
330: Flexible film DA: Display area
NDA: non-display area RE, GE, BE: light emitting areas
NEA: Non-emission area RC, GC, BC: Color filters

Claims (12)

Board;
An anode electrode disposed on the substrate;
A non-conductive film disposed between the anode electrodes;
A light emitting layer disposed on the anode electrode and the non-conductive layer; And
And a cathode electrode disposed on the light emitting layer,
Wherein the anode electrode and the non-conductive film include a metal oxide and are provided flatly without a step. The method according to claim 1,
Further comprising a supplementary anode electrode provided below the anode electrode,
And the non-conductive film covers a side surface of the auxiliary anode electrode. The method according to claim 1,
A semiconductor layer provided on the substrate;
A plurality of insulating films provided on the semiconductor layer;
A drain electrode provided on the plurality of insulating films; And
And a planarizing film provided on the drain electrode,
Wherein the drain electrode is connected to the semiconductor layer through a drain contact hole penetrating the plurality of insulating films and exposing the semiconductor layer,
Wherein the anode electrode is connected to the drain electrode through an anode contact hole penetrating the planarization layer and exposing the drain electrode,
Wherein the drain contact hole and the anode contact hole are not overlapped with each other. The method of claim 3,
And the anode electrode, the light emitting layer, and the cathode electrode are sequentially disposed on the drain electrode exposed by the anode contact hole. The method of claim 3,
And the anode electrode, the non-conductive film, the light emitting layer, and the cathode electrode are sequentially disposed on the drain electrode exposed by the anode contact hole. 6. The method of claim 5,
Wherein the anode electrode includes a first electrode portion and a second electrode portion extending from the first electrode portion and connected to the drain electrode,
And the second electrode portion is disposed on the anode contact hole. The method according to claim 6,
The non-conductive film includes a first non-conductive film in contact with the planarization film and a second non-conductive film extending from the first non-conductive film and provided on the second electrode,
And the second non-conductive film is disposed on the anode contact hole. The method of claim 3,
Further comprising a shorting prevention member provided between the anode electrode and the light emitting layer,
And the shot preventing member covers the anode contact hole. 9. An organic light emitting display device according to any one of claims 1 to 8;
A display storage case for storing the organic light emitting display device; And
And a left eye lens and a right eye lens disposed on one side of the storage case and provided with an image of the organic light emitting display device. Providing a non-conductive film on the substrate so as to be disposed between the anode electrode and the anode electrode;
Providing a light emitting layer on the anode electrode and the non-conductive layer; And
And a cathode electrode on the light emitting layer,
Wherein the anode electrode and the non-conductive film include a metal oxide and are provided flatly without a step. 11. The method of claim 10,
Wherein the step of providing an anode electrode and a non-conductive film on the substrate comprises:
Applying a conductive metal oxide on the substrate and applying a photoresist on the metal oxide;
Forming a photoresist pattern by patterning the photoresist, and injecting impurities into the metal oxide not covered by the photoresist pattern;
And removing the photoresist pattern to thereby provide the anode electrode and the non-conductive film which are flat and flat. 12. The method of claim 11,
A metal oxide which is masked by the photoresist pattern and is not doped with impurities is provided as an anode electrode,
And a metal oxide not doped with the photoresist pattern and doped with impurities is provided as a non-conductive film.

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