JP2014038782A - Electro-optic device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the light emission of the light emitting function layer of an inter-element region in which no light emitting element are formed.SOLUTION: In an electro-optic device with an active driving system, a display device 2 includes a display region 10 in which pixels 11 each of which has light emitting elements 16 are arrayed in a first direction and a second direction orthogonal to the first direction, and a display signal is supplied to the selected pixel 11 such that the light emitting elements 16 are allowed to emit the rays of light. Each of those light emitting elements 16 has: a pixel electrode 34 formed for each pixel 11 to which the display signal is supplied; a band-shaped counter electrode 37 arranged so as to counter the pixel electrode 34, and to be stretched between the plurality of pixels 11 arrayed in either the first direction or the second direction; and a light emitting function layer 36 arranged so as to be sandwiched between the pixel electrode 34 and the band-shaped counter electrode 37, and to cover the display region 10. A plurality of band-shaped counter electrodes 37 are arranged in the display region 10, and the plurality of band-shaped counter electrodes 37 are electrically connected to each other in the periphery of the display region 10.

Description

  The present invention relates to an electro-optical device and an electronic apparatus equipped with the electro-optical device.

  Conventionally, as described in Patent Document 1, for example, an electronic viewfinder that can be mounted on an electronic device such as a digital camera has been proposed. The electronic viewfinder described in Patent Document 1 is a non-light emitting display device including a liquid crystal display device, and includes a backlight as a light source.

  In a micro display having a display area of less than 1 inch such as an electronic viewfinder, performance improvement such as reduction in thickness and weight is important. Since the above-described liquid crystal display device requires a backlight as a light source, there is a limit to reducing the thickness and weight of the device. Thus, for example, a display device described in Patent Document 2 has been proposed. The display device described in Patent Document 2 is a self-luminous display device in which pixels having light-emitting elements are arranged in a matrix. The light emitting element is a so-called organic EL (electroluminescence) element, and includes a pixel electrode, a counter electrode, a light emitting functional layer, and the like. Since the self-luminous display device does not require a backlight as a light source as compared with a non-luminous display device, it is advantageous in terms of reduction in thickness and weight.

JP 2010-96800 A JP 2007-108248 A

  However, when the display device described in Patent Document 2 is applied to the above-described microdisplay and the light emitting element is caused to emit light, a region where no light emitting element is disposed and which should not emit light (inter-element region) also emits light. There was a problem.

  Specifically, since the pixel size constituting the above-described microdisplay is as small as approximately 10 μm or less, it is difficult to pattern the light emitting functional layer for each light emitting element, and the light emitting functional layer straddles a plurality of light emitting elements (covers the display region). Is formed). For this reason, the light emitting functional layer is also formed between the light emitting elements and the adjacent light emitting elements, that is, between the elements. Since the space between the light emitting element and the adjacent light emitting element is as small as several μm or less, depending on the signal supplied to the pixel electrode of the light emitting element, the pixel electrode of the light emitting element is opposed to the adjacent light emitting element. In some cases, a leakage current flows between the electrodes and the light emitting functional layer in the designed non-light emitting region (inter-element region) emits light. That is, depending on the signal supplied to the pixel electrode, the light emitting functional layer formed in the inter-element region emits light, and there is a problem in that a problem such as a decrease in display contrast and a change in color occurs.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 The electro-optical device according to this application example has a display area in which pixels having light emitting elements are arranged in a first direction and a second direction intersecting the first direction, and is selected. An active drive type electro-optical device that supplies a display signal to a pixel and causes a light-emitting element to emit light, wherein the light-emitting element is formed for each pixel and is supplied with a display signal. A light emitting function disposed between a plurality of pixels arranged in either the direction or the second direction and a display area sandwiched between the pixel electrode and the band-shaped counter electrode and covering the display region A plurality of strip-shaped counter electrodes are arranged in the display region, and the plurality of strip-shaped counter electrodes are electrically connected to each other around the display region.

  The counter electrode has a strip shape (stripe shape) arranged across a plurality of pixels, and a region where the counter electrode is not formed exists in the display region. Compared to the case where the counter electrode is formed on the entire surface of the display region, the pixel electrode of one pixel of the plurality of pixels is adjacent to the pixel by providing a region where the counter electrode is not formed in the display region. The distance between the counter electrodes can be increased. As a result, the resistance component between the pixel electrode and the adjacent counter electrode becomes large, and a leak current hardly flows between the pixel electrode and the adjacent counter electrode. Accordingly, light emission of the light emitting functional layer between the pixel electrode and the adjacent counter electrode, that is, the light emitting functional layer in the region (inter-element region) between the light emitting element and the adjacent light emitting element can be suppressed.

  Application Example 2 In the electro-optical device according to the application example described above, the width of the strip-shaped counter electrode is equal to or less than the width of the pixel electrode in a direction orthogonal to the arrangement direction of the pixel electrodes facing the strip-shaped counter electrode. Preferably there is.

  Since the width of the strip-shaped counter electrode is equal to or smaller than the width of the pixel electrode disposed opposite to the counter electrode, the pixel electrode disposed opposite to the counter electrode is adjacent to the counter electrode. The distance between the strip-shaped counter electrode can be increased. For this reason, the leakage current between the pixel electrode arranged to face the counter electrode and the strip-shaped counter electrode adjacent to the counter electrode can be reduced. Therefore, light emission of the light emitting functional layer between the pixel electrode disposed to face the counter electrode and the strip-shaped counter electrode adjacent to the counter electrode, that is, the light emitting functional layer in the inter-element region can be suppressed.

  Application Example 3 In the electro-optical device according to the application example described above, at least a part of the peripheral portion of the pixel electrode is covered with an insulating film, and the strip-shaped counter electrode is formed in a region not covered with the insulating film of the pixel electrode. The width of the strip-shaped counter electrode is equal to or less than the width of the region not covered with the insulating film of the pixel electrode in the direction perpendicular to the arrangement direction of the pixel electrodes opposed to the strip-shaped counter electrode. preferable.

  The width of the strip-shaped counter electrode is equal to or smaller than the width of the region not covered with the insulating film of the pixel electrode disposed to face the counter electrode, so that the insulation disposed to face the counter electrode. The distance between the pixel electrode in the region not covered with the film and the strip-shaped counter electrode adjacent to the counter electrode can be increased. For this reason, it is possible to reduce the leakage current between the pixel electrode in a region not covered with the insulating film disposed to face the counter electrode and the strip-shaped counter electrode adjacent to the counter electrode. Therefore, the light emitting functional layer between the pixel electrode in the region not covered with the insulating film disposed opposite to the counter electrode and the band-shaped counter electrode adjacent to the counter electrode, that is, the light emitting functional layer in the inter-element region. Luminescence can be suppressed.

  Application Example 4 The electro-optical device according to the application example described above includes a strip-shaped common electrode arranged in a direction along the strip-shaped counter electrode between adjacent strip-shaped counter electrodes, and the strip-shaped common electrode is It is preferable that a plurality of strip-like common electrodes are arranged in the display region, and the plurality of strip-like common electrodes are electrically connected to each other around the display region and supplied with a voltage higher than that of the strip-like counter electrode.

  Since a common electrode to which a voltage larger than the counter electrode is supplied is formed between the pixel electrode and the adjacent counter electrode, that is, in the inter-element region, a light emitting functional layer is provided from the pixel electrode to the adjacent counter electrode. It is difficult for carriers (holes) to emit light to flow. Therefore, light emission of the light emitting functional layer in the inter-element region can be suppressed.

  Application Example 5 In the electro-optical device according to the application example described above, a voltage smaller than the display signal is supplied to the strip-shaped counter electrode, and the minimum voltage at which the light-emitting element emits light from the maximum voltage of the display signal is applied to the strip-shaped common electrode. It is preferable that a voltage larger than the voltage obtained by subtracting is supplied.

  The common electrode is supplied with a voltage higher than the voltage obtained by subtracting the minimum value (minimum voltage) of the light emitting element (light emitting functional layer) from the maximum value (maximum voltage) of the display signal supplied to the pixel electrode. Therefore, the voltage between the pixel electrode and the common electrode is smaller than the lowest voltage at which the light emitting functional layer emits light even when the maximum voltage is supplied to the pixel electrode. Therefore, regardless of the display signal supplied to the pixel electrode, the voltage between the pixel electrode and the common electrode is maintained at a voltage at which the light emitting functional layer does not emit light. Therefore, light emission of the light emitting functional layer in the inter-element region where the light emitting element is not formed can be suppressed regardless of the display signal supplied to the pixel electrode.

  Application Example 6 In the electro-optical device according to the application example described above, it is preferable that the strip-shaped counter electrode and the strip-shaped common electrode are formed of the same material and in contact with the light emitting functional layer.

  Since the strip-shaped counter electrode and the strip-shaped common electrode are formed of the same material, for example, the counter electrode and the common electrode can be formed in the same process without increasing the man-hour of adding a new material. it can.

  Application Example 7 In the electro-optical device according to the application example described above, it is preferable that the strip-shaped counter electrode has light transmittance and light reflectivity, and the strip-shaped common electrode has light shielding properties.

  A light-shielding common electrode is formed between the belt-like counter electrode and the adjacent belt-like counter electrode, and the common electrode functions as a light-shielding film (black matrix) that shields unnecessary light. Can be improved.

  Application Example 8 In the electro-optical device according to the application example described above, the pixel electrode has light transmittance, the strip-shaped counter electrode has light transmittance and light reflectivity, and the pixel electrode has a strip-shaped counter electrode and On the opposite side, it is preferable that a reflective film having light reflectivity is disposed, and an optical resonant structure for resonating light emitted from the light emitting functional layer is formed between the strip-shaped counter electrode and the reflective film.

  An optical resonant structure that resonates the light emitted from the light emitting functional layer is formed between the strip-shaped counter electrode and the reflective film, and the light emitted from the light emitting functional layer in the optical resonant structure is resonated to a specific wavelength and specified. Light with a wavelength can be efficiently extracted (emitted). Furthermore, by setting the wavelength range of light that resonates in each pixel to a wavelength range corresponding to the three primary colors of light (red, green, and blue), and emitting light corresponding to red, green, and blue from each pixel Can provide a full color display.

  Application Example 9 An electronic apparatus according to this application example includes the electro-optical device described in the application example.

  Since the electronic device of this application example includes an electro-optical device (micro display) in which a malfunction such as a decrease in display contrast and a change in color due to light emission from the light emitting functional layer in the inter-element region is suppressed, display quality is improved. For example, a small and lightweight electronic device such as an HMD (Head Mounted Display) or a digital camera can be provided. Furthermore, the electro-optical device of the present invention can be applied to display units of various electronic devices such as mobile computers, in-vehicle devices, audio devices, and information terminal devices in addition to the above-described HMD and digital camera.

FIG. 3 is a perspective view illustrating a configuration of a display device according to the first embodiment. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the display device according to the first embodiment. 3 is a diagram showing a relationship between a voltage applied to a pixel electrode of the display device according to Embodiment 1 and a current flowing through the light emitting element. FIG. 2 is a cross-sectional view of the display panel taken along line A-A ′ in FIG. 1. The top view of the element substrate corresponding to the display area of FIG. FIG. 3 is an equivalent circuit diagram illustrating a wiring state of a counter electrode and a common electrode of the display device according to the first embodiment. Sectional drawing of the display apparatus which concerns on Embodiment 2. FIG. FIG. 5 is a plan view of an element substrate according to a second embodiment. Sectional drawing of the display apparatus which concerns on the modification 1. FIG. Sectional drawing of the display apparatus which concerns on the modification 2. FIG. (A) is a schematic diagram showing an outline of HMD as an example of electronic equipment. FIG. 4B is a schematic diagram illustrating an outline of a digital camera as an example of an electronic apparatus.

  Embodiments of the present invention will be described below with reference to the drawings. Such an embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. In each of the following drawings, the scale of each layer or each part is made different from the actual scale so that each layer or each part can be recognized on the drawing.

(Embodiment 1)
"Overview of display device"
FIG. 1 is a perspective view illustrating a configuration of a display device according to the first embodiment. FIG. 2 is an equivalent circuit diagram showing an electrical configuration of the display device according to the present embodiment. FIG. 3 is a diagram illustrating the relationship between the voltage applied to the pixel electrode and the current flowing through the light emitting element. In FIG. 2, the common electrode 38 (see FIG. 4), which will be described later, is not shown for easy understanding of the operation of the display device 1.
First, an overview of the display device 1 will be described with reference to FIGS. 1 and 2.

  The display device 1 according to the present embodiment is an example of an electro-optical device, and is a self-luminous display device in which pixels 11 having light-emitting elements 16 (see FIG. 2) described later are arranged in a matrix. Note that a region surrounded by a two-dot chain line in FIG. 1 is a display region 10 in which the pixels 11 are arranged.

  As shown in FIG. 1, the display device 1 includes a display panel 5, a flexible substrate 28, and the like. The display panel 5 includes the display area 10 described above. As shown in the upper right of FIG. 1, the display area 10 includes a pixel (R pixel) 11R that emits red (R), a pixel (G pixel) 11G that emits green (G), and a blue (B ) Emitting pixels (B pixels) 11B are arranged in stripes. The three pixels 11 corresponding to the R pixel 11R, the G pixel 11G, and the B pixel 11B serve as a display unit 12 to provide a full color display.

Hereinafter, the direction along one side of the display panel 5 on the side close to the flexible substrate 28 is the X-axis direction, the direction along the other two sides crossing the one side and facing each other is the Y-axis direction, and the X-axis direction. The thickness direction of the display panel 5 that is orthogonal to the Y-axis direction will be described as the Z-axis direction.
The display panel 5 is a display body that provides a full-color display, and includes a device substrate 30 and a counter substrate 50. The element substrate 30 and the counter substrate 50 are bonded with a translucent resin (not shown).

  The element substrate 30 includes a display area 10 in which the pixels 11 are arranged in a matrix in the X-axis direction and the Y-axis direction, a drive circuit (scanning line drive circuit 24, data line drive circuit 25) for driving the pixels 11, and the like. Yes. The X-axis direction in which the pixels 11 are arranged is an example of the first direction, and the Y-axis direction in which the pixels 11 are arranged is an example of the second direction. The scanning line drive circuit 24 displays between the side extending in the Y-axis direction of the element substrate 30 and the display region 10, and the data line drive circuit 25 displays the side on the side where the flexible substrate 28 of the element substrate 30 is bonded. It arrange | positions between the area | regions 10.

  The counter substrate 50 is a color filter substrate in which a colored layer (color filter) is formed at a position corresponding to each pixel 11 described above.

  One side of the element substrate 30 protrudes from the counter substrate 50, and the flexible substrate 28 is bonded to the protruding region. The flexible substrate 28 is provided with a driving IC 29, and signals and power for driving the scanning line driving circuit 24 and the data line driving circuit 25 are supplied to the element substrate 30.

  As shown in FIG. 2, a plurality of scanning lines 21 extend in the X-axis direction, and a plurality of data lines 22 and a power supply line 23 extend in the Y-axis direction in the display area 10. Yes. The scanning line 21 is connected to the scanning line driving circuit 24, and the data line 22 is connected to the data line driving circuit 25. The scanning line 21 and the data line 22 intersect each other, and the pixel 11 is formed in an area partitioned by the scanning line 21 and the data line 22.

  In the pixel 11, a switching thin film transistor (hereinafter, the thin film transistor is referred to as a TFT (Thin Film Transistor)) 13, a storage capacitor 15, a driving TFT 14, a light emitting element 16, and the like are formed. When the scanning signal is supplied from the scanning line driving circuit 24 to the gate electrode of the switching TFT 13 via the scanning line 21 and the switching TFT 13 is turned on, the data line driving circuit 25 passes through the data line 22 and the switching TFT 13. A signal is supplied to the holding capacitor 15. The signal held in the storage capacitor 15 is supplied to the gate electrode of the driving TFT 14. When the driving TFT 14 is turned on, a current flows from the power supply line 23 to the pixel electrode 34 via the driving TFT 14, and the pixel electrode The voltage (potential) Vp of 34 changes. In other words, a display signal (voltage Vp) is supplied from the power supply line 23 to the pixel electrode 34 via the driving TFT 14. Further, the display signal supplied to the pixel electrode 34 varies depending on the signal from the data line driving circuit 25 held in the holding capacitor. As a result, the voltage Vp of the pixel electrode 34 changes in the range of 0V to 5V.

  The light emitting element 16 includes a pixel electrode 34, a light emitting functional layer 36, and a counter electrode 37. A reference voltage (0 V) smaller than the voltage Vp of the pixel electrode 34 is supplied to the counter electrode 37. Thus, the voltage Vo of the counter electrode is a constant voltage of 0V. As a result, the voltage Vp of the pixel electrode 34 is applied to the light emitting functional layer 36 between the pixel electrode 34 and the counter electrode 37.

  FIG. 3 shows the relationship between the voltage Vp of the pixel electrode 34 (voltage applied to the light emitting functional layer 36) and the current flowing through the light emitting element 16. The horizontal axis in FIG. 3 indicates the voltage Vp of the pixel electrode 34. The vertical axis in FIG. 3 indicates the current flowing through the light emitting element 16. Vth in the figure indicates a threshold voltage (minimum voltage) at which the light emitting functional layer 36 emits light. The minimum voltage Vth at which the light emitting functional layer 36 emits light is approximately 3V. When the voltage Vp of the pixel electrode 34 becomes higher than Vth (approximately 3V), the light emitting functional layer 36 emits light. Further, as the voltage Vp of the pixel electrode 34 increases, the current flowing through the light emitting element 16 increases, and the luminance of light emitted from the light emitting functional layer 36 increases.

"Display Panel Overview"
FIG. 4 is a cross-sectional view of the display panel taken along line AA ′ in FIG. Moreover, the arrow of FIG. 4 has shown the emission direction of light.

  As shown in FIG. 4, the light emitted from the display panel 5 is emitted in the Z-axis (+) direction. In the Z-axis (+) direction of the display panel 5, the element substrate 30 and the counter substrate 50 are stacked in this order. In the Z-axis (+) direction of the element substrate 30, the element substrate body 31, the reflective film 32, the insulating film 33, the pixel electrode 34, the insulating film 35, the light emitting functional layer 36, the counter electrode 37, the common electrode 38, The sealing layer 39 is laminated in this order. A common electrode 38 is provided in the same layer as the counter electrode 37.

  The element substrate body 31 is made of an insulating substrate such as quartz or non-alkali glass, the scanning line 21, the data line 22, the power supply line 23, the scanning line driving circuit 24, the data line driving circuit 25, the switching TFT 13, the holding capacitor 15, The driving TFT 14 (see FIG. 2) is a transistor substrate formed by a known technique.

  The reflective film 32 is one of the pair of reflective layers that reflects the light emitted from the light emitting functional layer 36. The reflective film 32 is made of a material having high reflectance, and is formed in an island shape for each pixel 11. As a material for forming the reflective film 32, for example, aluminum, silver, an alloy containing aluminum as a main component, an alloy containing silver as a main component, or the like can be used.

The insulating film 33 is a light-transmitting insulating film such as silicon oxide (SiO ₂ ) or silicon nitride (SiN), and is formed on substantially the entire surface of the element substrate body 31. The insulating film 33 is subjected to a planarization process in order to reduce the influence of the unevenness of the reflective film 32.

  The pixel electrode 34 is an electrode for supplying holes to the light emitting functional layer 36. The pixel electrode 34 is light transmissive, is formed of a light transmissive material such as ITO (Indium Tin Oxide), and is disposed for each pixel 11 so as to overlap the reflective film 32 in a planar manner. Further, the pixel electrode (R pixel electrode) 34R of the R pixel 11R, the pixel electrode (G pixel electrode) 34G of the G pixel 11G, and the pixel electrode (B pixel electrode) 34B of the B pixel 11B have different film thicknesses. . As a result, the optical distance of the light transmissive material (insulating film 33, pixel electrode 34, light emitting functional layer 36) between the reflective film 32 and the counter electrode 37 is such that the optical path length that causes the R light to resonate in the R pixel 11R. It has become. Similarly, the G pixel 11G has an optical path length for resonating G light, and the B pixel 11G has an optical path length for resonating B light.

The insulating film 35 is a light-transmitting insulating film such as silicon oxide (SiO ₂ ) or silicon nitride (SiN), and is formed so as to cover the periphery of the pixel electrode 34. As a result, the step portion of the pixel electrode 34 is covered with the insulating film 35.

  The light emitting functional layer 36 is formed so as to cover the display region 10. The light emitting functional layer 36 emits white light when a current flows, and has at least an organic light emitting layer. The organic light emitting layer emits light having red, green and blue light components. The organic light-emitting layer may be a single layer or a plurality of layers (for example, a blue light-emitting layer that emits mainly blue light when current flows and a yellow light-emitting layer that emits light including red and green when current flows). May be. Although illustration is omitted, the light emitting functional layer 36 includes layers such as a hole transport layer, a hole injection layer, an electron block layer, a hole block layer, an electron transport layer, and an electron injection layer in addition to the organic light emitting layer. You may do it.

  The counter electrode 37 is an electrode for supplying electrons to the light emitting functional layer 36. The counter electrode 37 is disposed to face a region (opening region) that is not covered with the insulating film 35 of the pixel electrode 34. The counter electrode 37 has light reflectivity and light transmissivity (translucent semi-reflective property), and is made of, for example, an alloy of magnesium (Mg) and silver (Ag). As a constituent material of the counter electrode 37, a metal film such as Al can be used in addition to an alloy of Mg and Ag. By reducing the thickness of these metal films to 10 nm or less, a light transmissive function can be imparted in addition to a light reflective function.

  The counter electrode 37 is the other reflective layer of the pair of reflective layers that reflects the light emitted from the light emitting functional layer 36. As a result, the light emitted from the light emitting functional layer 36 is repeatedly reflected between the reflective film 32 and the counter electrode 37. As described above, the optical distance between the reflective film 32 and the counter electrode 37 is set to an optical path length that resonates light in a specific wavelength region for each pixel 11. As a result, the light in the specific wavelength range is amplified and the light outside the specific wavelength range is attenuated by the optical resonance structure, so that the R light from the R pixel 11R, the G light from the G pixel 11G, and B B light is emitted from the pixel 11 </ b> B to the counter substrate 50.

  Thus, the element substrate 30 has an optical resonance structure that resonates light emitted from the light emitting functional layer 36 between the reflective film 32 and the counter electrode 37. In this embodiment, the thickness of the insulating film 33 is constant and the thickness of the pixel electrode 34 is changed. However, the thickness of the pixel electrode 34 is constant and the thickness of the insulating film 33 is changed. It may be.

  The common electrode 38 is formed between the counter electrode 37 and the adjacent counter electrode 37. The common electrode 38 and the counter electrode 37 are formed in contact with the light emitting functional layer 36 (in the same layer) with the same material (alloy of Mg and Ag). That is, the common electrode 38 and the counter electrode 37 are formed in the same process. The shaded area in the figure is the common electrode 38.

  The sealing layer 39 is a passivation film that suppresses deterioration of the light emitting functional layer 36 and the counter electrode 37 and is formed to cover the display region 10 with an insulating film such as SiN or silicon oxynitride (SiON). The sealing layer 39 blocks oxygen and moisture and suppresses deterioration of the light emitting functional layer 36 and the counter electrode 37.

Next, the configuration of the counter substrate 50 will be described.
The counter substrate 50 includes a counter substrate body 51, a color filter 52, and a light shielding film 55.

The counter substrate main body 51 is made of a light transmissive material such as quartz or non-alkali glass, for example. A color filter (R filter) 52R that transmits R light is provided at a position corresponding to the R pixel 11R, and a color filter (G filter) 52G that transmits G light is provided at a position corresponding to the G pixel 11G. A color filter (B filter) 52B that transmits B light is formed at the corresponding position. The R filter 52R, the G filter 52G, and the B filter 52B have a role of increasing the color purity of the R light, G light, and B light emitted from the element substrate 30. The light shielding film 55 is made of a light shielding material such as Cr, and is formed in the gaps between the color filters 52. The light shielding film 55 is a black matrix that shields so-called unnecessary light, and has a function of increasing the display contrast of the image displayed in the display region 10.
In the present embodiment, the color filter 52 is formed on the counter substrate 50 side, but the color filter 52 may be formed on the element substrate 30 side.

"Outline of element substrate"
FIG. 5 is a plan view of the display area enlarged and shown in the upper right of FIG. 1 in the element substrate according to the present embodiment. In FIG. 5, the sealing layer 39 and the light emitting functional layer 36 are not shown for easy understanding of the configuration of the element substrate 30. In the drawing, the region where the light emitting element 16 is formed is shown as a hatched region, and the common electrode 38 is shown as a shaded region. Hereinafter, an outline of the element substrate 30 will be described with reference to FIG.

As described above, the light emitting element 16 includes the pixel electrode 34, the light emitting functional layer 36, and the counter electrode 37. Holes are supplied from the pixel electrode 34, electrons are supplied from the counter electrode 37, and the holes and electrons recombine in the light emitting functional layer 36, so that the light emitting functional layer 36 emits light.
As shown in FIG. 5, the pixel electrode 34 is formed in an island shape for each pixel 11. The peripheral edge of the pixel electrode 34 is covered with an insulating film 35, and the pixel electrode 34 in a region not covered with the insulating film 35 becomes an electrode (anode) that supplies holes to the light emitting functional layer 36. W2 in the drawing indicates the width (length in the X-axis direction) of the pixel electrode 34 in a region not covered with the insulating film. Hereinafter, the pixel electrode 34 in a region not covered with the insulating film may be referred to as an anode.

  The light emitting functional layer 36 is formed so as to cover the display region 10, that is, straddling the adjacent pixels 11 (see FIG. 4).

The counter electrode 37 is disposed so as to face the region of the pixel electrode 34 that is not covered with the insulating film 35 and extends across the plurality of pixel electrodes 34 arranged in the Y-axis direction. The counter electrode 37 is a belt-like electrode extending in the Y-axis (+) direction, and a plurality of counter electrodes 37 are arranged in the display region 10. W1 in the figure indicates the width of the counter electrode 37 (the length in the X-axis direction). W1 (width of the counter electrode 37) is substantially the same size as W2 (width of the anode).
In the present specification, the same dimension includes an error caused in the manufacturing process.

The light emitting element 16 is formed in a region where the pixel electrode 34 in a region not covered with the insulating film 35 and the counter electrode 37 overlap in a plane. The hatched region in the figure is a region where the light emitting element 16 is formed (hereinafter referred to as the light emitting element 16).
The light emitting element 16 has a rectangular shape that is horizontally long in the Y-axis direction. Between the short side of the light emitting element 16 (the side along the X-axis direction) and the short side of the adjacent light emitting element 16, the pixel electrode 34 and the driving TFT 14 (see FIG. 2) A contact region 17 for electrically connecting the two is disposed.

A common electrode 38 is formed between the counter electrode 37 and the adjacent counter electrode 37, that is, in a region between the light emitting element 16 and the adjacent light emitting element 16 (hereinafter referred to as an inter-element region). If the voltage between the pixel electrode 34 and the common electrode 38 is higher than the lowest voltage Vth (approximately 3 V) at which the light emitting functional layer 36 emits light, the light emitting functional layer 36 in the inter-element region may emit light. Further, when the voltage between the pixel electrode 34 and the common electrode 38 becomes smaller than the lowest voltage Vth (approximately 3 V) at which the light emitting functional layer 36 emits light, the light emitting functional layer 36 in the inter-element region is suppressed from emitting light.
In the present embodiment, a voltage suitable for suppressing light emission in the inter-element region is supplied to the common electrode 38. The details will be described below.

  As described above, the strip-shaped common electrode 38 is disposed between the adjacent strip-shaped counter electrodes 37 in a direction along the strip-shaped counter electrode 37 (extending in the Y-axis direction). A constant voltage of 5 V is supplied to the common electrode 38. Hereinafter, the voltage of the common electrode 38 is denoted by reference character Vc.

  The common electrode 38 and the counter electrode 37 are formed (microfabricated) on the light emitting functional layer 36 with the same material (alloy of Mg and Ag) in the same process. Since the light emitting functional layer 36 is easily deteriorated by moisture, it is not preferable to use water in the step of finely processing the counter electrode 37 and the common electrode 38. That is, the counter electrode 37 and the common electrode 38 are preferably finely processed by a dry process that does not use water.

  For example, by depositing an alloy of Mg and Ag in a state where a thin wire (wire mask) is arranged in a region where the counter electrode 37 and the common electrode 38 are not formed, and then peeling the wire mask, A counter electrode 37 and a strip-shaped common electrode 38 can be formed. Alternatively, after vapor deposition of an alloy of Mg and Ag, the region where the counter electrode 37 and the common electrode 38 are not formed is irradiated with a laser beam to evaporate the alloy of Mg and Ag. A strip-shaped counter electrode 37 and a strip-shaped common electrode 38 can be formed. Alternatively, the band-shaped counter electrode 37 and the band-shaped common electrode 38 described above can also be formed by a fine processing method (selective removal of a film or selective deposition of a film) using an ion beam.

In the X-axis direction, a common electrode 38 is formed between the pixel electrode 34a of one pixel 11a among the plurality of pixels arranged and the counter electrode 37b of the adjacent pixel 11b. Here, the voltage between the pixel electrode 34a and the adjacent common electrode 38 is Vpc, and the voltage between the common electrode 38 and the adjacent counter electrode 37b is Vco.
The voltage Vpc between the pixel electrode 34a and the adjacent common electrode 38 is expressed by the following equation (1) (the voltage of the pixel electrode 34a is Vp, and the voltage of the common electrode 38 is Vc).
Vpc = Vp−Vc (1)
Further, the voltage Vco between the common electrode 38 and the adjacent counter electrode 37b is expressed by the following equation (2) (the voltage of the counter electrode 37b is Vo).
Vco = Vc−Vo Formula (2)

  In this embodiment, since Vp = 0 to 5V and Vc = 5V, Vpc = 0 to −5V. Regardless of the value of the voltage Vp of the pixel electrode 34a, the voltage Vpc between the common electrode 38 adjacent to the pixel electrode 34a is lower than the lowest voltage Vth (approximately 3V) at which the light emitting functional layer 36 emits light. Therefore, the light emitting functional layer 36 between the pixel electrode 34 a and the adjacent common electrode 38, that is, the light emitting functional layer 36 in the inter-element region emits light due to the voltage between the pixel electrode 34 a and the common electrode 38. There is no.

  In this embodiment, Vc = 5V and Vo = 0V, so Vco = 5V. Even if a leakage current flows between the common electrode 38 and the counter electrode 37b due to the voltage Vco (5 V) between the common electrode 38 and the adjacent counter electrode 37b, the light emitting function that contacts the common electrode 38 and the counter electrode 37b. Since a current flows through the surface layer of the layer 36 and does not reach the organic light emitting layer in the light emitting functional layer 36, light emission of the light emitting functional layer 36 is suppressed.

Assuming that the maximum voltage supplied to the pixel electrode 34a is Vp (Max), the voltage Vpc between the pixel electrode 34a and the adjacent common electrode 38b is the pixel electrode as long as the following equation (3) is satisfied. Regardless of the voltage Vp of 34a, it becomes smaller than the minimum voltage Vth at which the light emitting functional layer 36 emits light, and light emission of the light emitting functional layer 36 is suppressed.
Vpc = Vp (Max) −Vc <Vth (3)
From Expression (3), if the voltage Vc of the common electrode 38 satisfies Expression (4) shown below, light emission of the light emitting functional layer 36 is suppressed regardless of the voltage Vp of the pixel electrode 34a.
Vp (Max) −Vth <Vc (4)

As described above, when the voltage Vc of the common electrode 38 is larger than the voltage obtained by subtracting the minimum voltage Vth at which the light emitting element 16 (light emitting functional layer 36) emits light from the maximum voltage Vp (Max) of the pixel electrode 34a, Regardless of the value of the voltage Vp, light emission of the light emitting functional layer 36 between the pixel electrode 34a and the common electrode 38, that is, the light emitting functional layer 36 in the inter-element region is suppressed.
Further, the carriers (mainly holes) that cause the light emitting functional layer 36 to emit light are prevented from flowing in the lateral direction due to the electric field generated by the pixel electrode 34a and the common electrode 38 to which a higher voltage is applied than the counter electrode 37b. Is done. Therefore, the light emission of the light emitting functional layer 36 in the inter-element region is also suppressed by the electric field generated by the pixel electrode 34a and the common electrode 38.

  The common electrode 38 is formed along the long side (side along the Y-axis direction) of the light emitting element 16, and light emission of the light emitting functional layer 36 in the inter-element region on the side close to the long side of the light emitting element 16 is suppressed. ing. In addition, since the common electrode 38 is not formed in the inter-element region on the side close to the short side (side along the X-axis direction) of the light-emitting element 16, depending on the voltage Vp of the pixel electrode 34a, the light-emitting element 16 In some cases, the light emitting functional layer 36 in the inter-element region on the side close to the short side emits light. However, since the light emitting area of the inter-element region is small on the short side of the light emitting element 16, it is not noticeable, and even if light is emitted, the influence on the display is small.

"Wiring of counter electrode and common electrode"
FIG. 6 is an equivalent circuit diagram illustrating a wiring state of the counter electrode and the common electrode of the display device according to the present embodiment. In FIG. 6, in order to facilitate understanding of the wiring state of the counter electrode 37 and the common electrode 38, illustration of components that are not involved in the wiring of the counter electrode 37 and the common electrode 38 is omitted.

  As shown in FIG. 6, in the display region 10, the strip-shaped counter electrodes 37 and the strip-shaped common electrodes 38 are arranged in a stripe arrangement alternately. The band-shaped counter electrode 37 and the band-shaped common electrode 38 extend to the vicinity of the display area 10, that is, between the display area 10 and the outer edge of the element substrate 30.

  A counter electrode trunk wiring 41 is arranged around the display area 10, and a plurality of strip-shaped counter electrodes 37 are connected to the counter electrode trunk wiring 41. That is, the plurality of strip-like counter electrodes 37 are electrically connected to each other around the display area 10. In other words, the plurality of strip-like counter electrodes 37 and the counter electrode trunk wiring 41 form comb-like electrodes branched around the display area 10.

  For example, the counter electrode main line 41 may be formed of the same material as the counter electrode 37 (an alloy of Mg and Ag) and in the same process as the counter electrode 37. For example, the counter electrode trunk wiring 41 may be configured to be made of the same material as that of the reflective film 32 and connected to the strip-shaped counter electrode 37 through a contact hole. For example, the counter electrode main wiring 41 may be a metal film that constitutes the TFTs 13 and 14 formed on the element substrate body 31 and may be connected to the strip-shaped counter electrode 37 through a contact hole.

  Similarly, a common electrode trunk line 42 is arranged around the display area 10, and a plurality of strip-like common electrodes 38 are connected to the common electrode trunk line 42. That is, the plurality of strip-shaped common electrodes 38 are electrically connected to each other around the display region 10. In other words, a comb-like electrode branched around the display area 10 is formed by the plurality of strip-like common electrodes 38 and the common electrode trunk wiring 42.

  For example, the common electrode trunk wiring 42 may be formed of the same material (Mg and Ag alloy) as the common electrode 38 and in the same process as the common electrode 38. For example, the common electrode trunk wiring 42 may be made of the same material as that of the reflective film 32 and connected to the strip-shaped common electrode 38 through a contact hole. For example, the common electrode trunk wiring 42 may be a metal film constituting the TFTs 13 and 14 formed on the element substrate body 31 and connected to the strip-shaped common electrode 38 through a contact hole.

  The counter electrode main wiring 41 and the common electrode main wiring 42 are arranged on one side of the display area 10, but the present invention is not limited to this. For example, the counter electrode main wiring 41 and the common electrode main wiring 42 are arranged on two opposite sides of the display area 10. For example, a configuration in which the display region 10 is disposed may be employed.

As described above, according to the display device 1 according to the present embodiment, the following effects can be obtained.
The element substrate 30 has an optical resonance structure that resonates light emitted from the light emitting functional layer 36 between the reflective film 32 and the counter electrode 37, and emits light in a specific wavelength region (R light, G light, B light) is amplified and emitted to the counter substrate 50 side. Further, the counter substrate 50 is formed with a color filter 52 that increases the color purity of the light emitted from the element substrate 30. Therefore, the light emitted from the display device 1 is excellent in color purity and can provide a vivid full color display.

  A common electrode 38 is disposed between the strip-shaped counter electrode 37 and the adjacent strip-shaped counter electrode 37, that is, in the inter-element region, and the voltage between the common electrode 38 and the pixel electrode 34 is the voltage Vp of the pixel electrode 34. Regardless of the above, since the voltage is lower than the minimum voltage Vth for causing the light emitting functional layer 36 to emit light, light emission of the light emitting functional layer 36 in the inter-element region can be suppressed. Therefore, problems such as a decrease in display contrast and a change in display color (color) due to light emission of the light emitting functional layer 36 in the inter-element region can be suppressed, and a high quality display can be provided.

  The display device 1 of the present invention has a configuration suitable for improving the display quality in a micro display (ultra-small display device) having a display size of less than 1 inch, in which the gap between the pixel 11 and the adjacent pixel 11 is extremely small. However, the same effect can be obtained even if it is applied to a display device having a display size of 1 inch or more.

(Embodiment 2)
FIG. 7 is a cross-sectional view of the display device according to the second embodiment, and corresponds to FIG. FIG. 8 is a plan view of the element substrate and corresponds to FIG. In FIG. 7, the sealing layer 39 and the light emitting functional layer 36 are not shown for easy understanding of the configuration of the element substrate 30.
Hereinafter, with reference to FIGS. 7 to 8, the display device 2 according to the present embodiment will be described focusing on differences from the first embodiment. Moreover, about the same component as Embodiment 1, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

  The display device 2 according to the present embodiment is different from the first embodiment in the configuration of the display panel 5. Specifically, in the display panel 5 of the first embodiment, the common electrode 38 is formed in the same layer as the counter electrode 37, but in the display panel 5 of the present embodiment, the common electrode 38 is not formed. This is the main difference from the first embodiment.

"Display Panel Overview"
As illustrated in FIG. 7, the element substrate 30 and the counter substrate 50 are stacked in this order in the Z-axis (+) direction of the display panel 5. In the Z-axis (+) direction of the element substrate 30, the element substrate body 31, the reflective film 32, the insulating film 33, the pixel electrode 34, the insulating film 35, the light emitting functional layer 36, the counter electrode 37, and the sealing layer 39. Are stacked in this order.

  As shown in FIG. 8, the counter electrode 37 is disposed so as to face a region of the pixel electrode 34 that is not covered with the insulating film 35, and straddles the plurality of pixel electrodes 34 arranged in the Y-axis direction. The width (length in the X-axis direction) W1 of the counter electrode 37 is smaller than the width W2 of the pixel electrode 34 in a region not covered with the insulating film.

  In the first embodiment, W1 = W2, but in the present embodiment, there is a relationship of W1 <W2, which is also different from the first embodiment. Since there is a relationship of W1 <W2, in the X-axis direction, an interval (space) W3 between the counter electrode 37 and the adjacent counter electrode 37 is larger than that in the first embodiment.

  The light emitting element 16 is formed in a region where the pixel electrode 34 in a region not covered with the insulating film 35 and the counter electrode 37 overlap in a plane. Since the relationship of W1 <W2 is established, the pixel electrode 34 in a region not covered with the insulating film 35 is formed so as to protrude from the light emitting element 16 in the X-axis direction.

The light emitting functional layer 36 in the inter-element region where the light emitting element 16 is not formed emits light due to a leak current between the pixel electrode 34 in the region not covered with the insulating film 35 and the counter electrode 37 of the adjacent light emitting element 16. There is a case. In the present embodiment, the interval W3 between the pixel electrode 34 in a region not covered with the insulating film 35 and the counter electrode 37 of the adjacent light emitting element 16 is long. That is, since the resistance component between the pixel electrode 34 in the region not covered with the insulating film 35 and the counter electrode 37 of the adjacent light emitting element 16 is large, the pixel electrode 34 and the adjacent light emitting element 16 are opposed to each other. Leakage current is difficult to flow between the electrodes 37. Therefore, the light emission functional layer 36 between the pixel electrode 34 in the region not covered with the insulating film 35 and the counter electrode 37 of the adjacent light emitting element 16, that is, the light emission functional layer 36 in the inter-element region is suppressed. Can do.
Therefore, even if the common electrode 38 is not formed, by increasing the interval W3 between the counter electrode 37 and the adjacent counter electrode 37, the pixel electrode 34 in the region not covered with the insulating film 35 is adjacent. A leak current between the light emitting element 16 and the counter electrode 37 is reduced, and light emission of the light emitting functional layer 36 in the inter-element region can be suppressed.

  Note that the inter-element region on the side close to the short side (side along the X-axis direction) of the light-emitting element 16 is covered with the counter electrode 37, so that depending on the voltage Vp of the pixel electrode 34, The light emitting functional layer 36 in the inter-element region on the side close to the short side may emit light. However, since the light emitting area of the inter-element region is small on the side close to the short side of the light emitting element 16, it is not noticeable, and even if it emits light, the influence on the display is small.

As described above, according to the display device 2 according to the present embodiment, in addition to the effect of the first embodiment in which the color purity of light emitted from the display device 1 can be increased by the resonance structure + color filter 52, The following effects can be obtained.
Since the interval W3 between the pixel electrode 34 in the region not covered with the insulating film 35 and the counter electrode 37 of the adjacent light emitting element 16 is long, the insulating film 35 can be formed without forming the common electrode 38. It is possible to suppress light emission of the light emitting functional layer 36 between the pixel electrode 34 in the region not covered with the electrode and the counter electrode 37 of the adjacent light emitting functional layer 36, that is, the light emitting functional layer 36 in the inter-element region. Therefore, problems such as a decrease in display contrast and a change in display color (color) due to light emission of the light emitting functional layer 36 in the inter-element region can be suppressed, and a high quality display can be provided.

  Note that the present invention is not limited to the above-described embodiment, and various modifications and improvements can be added to the above-described embodiment. A modification will be described below.

(Modification 1)
FIG. 9 is a cross-sectional view of a display device according to Modification 1, and corresponds to FIG.
The display device 3 according to this modification is different from the first embodiment in that a colored layer (color filter) is not formed on the counter substrate 50, and the other configuration is the same as that of the first embodiment. Hereinafter, with reference to FIG. 9, an outline of the display device 3 according to the present modification will be described focusing on differences from the first embodiment.

  The element substrate 30 which is a constituent element of the display device 3 has a resonance structure that resonates light in a specific wavelength region between the reflective film 32 and the counter electrode 37. Specifically, the optical distance between the reflective film 32 and the counter electrode 37 is set to an optical path length for resonating light in a specific wavelength region for each pixel 11, and light in the specific wavelength region is amplified and other than the specific wavelength region. Therefore, the R light is emitted from the R pixel 11R, the G light is emitted from the G pixel 11G, and the B light is emitted from the B pixel 11B to the counter substrate 50 side (Z-axis (+) direction). Is done. As a result, even if no color filter is formed, R light is emitted from the R pixel 11R, G light is emitted from the G pixel 11G, and B light is emitted from the B pixel 11 in the Z-axis (+) direction. Is provided.

According to the display device 3 according to this modification, in addition to the effect of the first embodiment in which the light emission of the light emitting functional layer 36 in the inter-element region is suppressed, the following effect can be obtained.
Since the light emitted from the pixel 11 is directly emitted to the outside without passing through the color filter, absorption of light in the color filter is eliminated. As a result, a brighter display can be provided as compared with the display device 1 of the first embodiment having the color filter 52.

(Modification 2)
FIG. 10 is a cross-sectional view of a display device according to Modification Example 2, and corresponds to FIG.
The display device 4 according to this modification is different from Modification 1 described above in that the common electrode 38 of the element substrate 30 has light shielding properties and the light shielding film 55 is not formed on the counter substrate 50.

  The counter electrode 37 and the common electrode 38 are made of the same material (an alloy of Mg and Ag). When an alloy of Mg and Ag is thinned to 10 nm or less, in addition to the property of reflecting light (reflectivity), the property of transmitting light (light transmittance) is imparted. Further, when the alloy of Mg and Ag is thickened to several tens of nm or more, in addition to the property of reflecting light (reflectivity), the property of shielding light (light shielding property) is imparted. In this modification, the counter electrode 37 has a thickness of 10 nm or less, and the common electrode 38 has a thickness of several tens of nm or more. As a result, the common electrode 38 is imparted with light transmitting and light reflecting properties, and the common electrode 38 is imparted with light blocking properties and light reflecting properties.

  The common electrode 38 is formed in the inter-element region where the light emitting functional layer 36 does not emit light, and shields the inter-element region. As a result, unnecessary light can be shielded by the common electrode 38 without forming a light shielding film (black matrix) on the counter substrate 50. That is, the common electrode 38 has a function as a black matrix.

The counter electrode 37 and the common electrode 38 can be formed by depositing an alloy of Mg and Ag in a plurality of times. First, an alloy of Mg and Ag in the first layer is vapor-deposited, a region other than the common electrode 38 is irradiated with a laser beam, and the alloy of Mg and Ag in the region other than the common electrode 38 is evaporated. Next, an alloy of Mg and Ag of the second layer is vapor-deposited under the film thickness condition of the counter electrode 37, and a region other than the counter electrode 37 and the common electrode 38 is irradiated with a laser beam, so that the counter electrode 37 and the common electrode 38 are irradiated. The alloy of Mg and Ag in the other region is evaporated. As a result, the counter electrode 37 is formed by an alloy of Mg and Ag in the second layer, and the common electrode 38 is formed by a laminated film of an alloy of Mg and Ag in the first layer and an alloy of Mg and Ag in the second layer. Can be formed.
The counter electrode 37 and the common electrode 38 may be made of the same material or different materials.

According to the display device 4 according to this modification, in addition to the effects of Modification 1, the following effects can be obtained.
Since the common electrode 38 functions as a light shielding film (black matrix), unnecessary light can be shielded and display contrast can be improved without forming a light shielding film on the counter substrate 50.

<Electronic equipment>
Next, an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 11A is a perspective view showing a head mounted display (HMD), and FIG. 11B is a schematic plan view showing a digital camera.

  As shown in FIG. 11A, an HMD 100 as an electronic device includes an annular support unit 101 for mounting on an observer's head and a display unit 102 that displays an image on the left and right eyes of the observer. And have. Any one of the display device 1 to the display device 4 according to the embodiment or the modification is mounted on the display unit 102.

As shown in FIG. 11B, a digital camera 200 as another electronic device of the present embodiment includes a main body 201 having an optical system such as an image sensor. The main body 201 is provided with a monitor 202 for displaying captured images and an electronic viewfinder 203 for visually recognizing a subject. The electronic viewfinder 203 is equipped with any one of the display devices 1 to 4 according to the embodiment or the modification.
The display unit 102 and the electronic viewfinder 203 are both microdisplays having the same pixel density, and fine pixels are arranged. Since the display device 1 to the display device 4 according to the present embodiment or the modification are applied to the display unit 102 and the electronic viewfinder 203, display contrast reduction and display due to light emission of the light emitting functional layer 36 in the inter-element region. Problems such as changes in color (color) are suppressed, and a high-quality display is provided.

  Furthermore, in addition to the above-described HMD or digital camera, the display device of the present invention can also be applied to display units of various electronic devices such as mobile computers, digital video cameras, in-vehicle devices, audio devices, and information terminal devices.

  1, 2, 3, 4 ... display device, 5 ... display panel, 10 ... display area, 11 ... pixel, 12 ... display unit, 13 ... switching TFT, 14 ... driving TFT, 15 ... holding capacitor, 16 ... light emission Element 17 ... Contact region 21 ... Scanning line 22 ... Data line 23 ... Power supply line 24 ... Scanning line drive circuit 25 ... Data line drive circuit 28 ... Flexible substrate 29 ... Drive IC 30 ... Element substrate 31... Element substrate body 32. Reflective film 33. Insulating film 34. Pixel electrode 35. Insulating film 36. Light emitting functional layer 37. Counter electrode 38. Common electrode 39. 41 ... Counter electrode trunk wiring, 42 ... Common electrode trunk wiring, 50 ... Counter substrate, 51 ... Counter substrate main body, 52 ... Color filter, 55 ... Light shielding film, 100 ... HMD, 101 ... Support part, 102 ... Display part, 200: Digital camera La, 201 ... body, 202 ... monitor, 203 ... an electronic view finder.

Claims (9)

A pixel having a light emitting element has a display region arranged in a first direction and a second direction intersecting the first direction, and supplies a display signal to the selected pixel, and the light emitting element An electro-optical device of an active drive system that emits light,
The light emitting element is
A pixel electrode formed for each pixel and supplied with the display signal;
A strip-shaped counter electrode disposed across a plurality of the pixels opposed to the pixel electrode and arranged in either the first direction or the second direction;
A light emitting functional layer sandwiched between the pixel electrode and the strip-shaped counter electrode and disposed to cover the display region,
An electro-optical device, wherein a plurality of the strip-shaped counter electrodes are arranged in the display region, and the plurality of the strip-shaped counter electrodes are electrically connected to each other around the display region.   The width of the strip-shaped counter electrode is equal to or less than the width of the pixel electrode in a direction orthogonal to the arrangement direction of the pixel electrodes facing the strip-shaped counter electrode. Electro-optic device. At least a part of the peripheral edge of the pixel electrode is covered with an insulating film;
The strip-shaped counter electrode is disposed to face a region of the pixel electrode that is not covered with the insulating film,
In the direction orthogonal to the arrangement direction of the pixel electrodes facing the strip-shaped counter electrode, the width of the strip-shaped counter electrode is equal to or less than the width of the region of the pixel electrode not covered with the insulating film. The electro-optical device according to claim 1. Between the adjacent strip-shaped counter electrode adjacent to each other, a strip-shaped common electrode disposed in a direction along the strip-shaped counter electrode,
A plurality of the strip-shaped common electrodes are arranged in the display region, the plurality of the strip-shaped common electrodes are electrically connected to each other around the display region, and a voltage higher than the strip-shaped counter electrode is supplied. The electro-optical device according to claim 1, wherein the electro-optical device is any one of claims 1 to 3. A voltage smaller than the display signal is supplied to the strip-shaped counter electrode,
5. The electro-optical device according to claim 4, wherein a voltage larger than a voltage obtained by subtracting a minimum voltage at which the light emitting element emits light from a maximum voltage of the display signal is supplied to the strip-shaped common electrode.   6. The electro-optical device according to claim 4, wherein the strip-shaped counter electrode and the strip-shaped common electrode are made of the same material and are in contact with the light emitting functional layer. The strip-shaped counter electrode has light transmittance and light reflectivity,
The electro-optical device according to claim 4, wherein the strip-shaped common electrode has a light shielding property. The pixel electrode has optical transparency,
The strip-shaped counter electrode has light transmittance and light reflectivity,
A reflective film having light reflectivity is disposed on the opposite side of the pixel electrode from the strip-shaped counter electrode, and resonates light emitted from the light emitting functional layer between the strip-shaped counter electrode and the reflective film. 8. The electro-optical device according to claim 1, wherein an optical resonance structure is formed.
  An electronic apparatus comprising the electro-optical device according to claim 1.

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