KR20180000899A - Etching solution composition and preparing method of an array substrate for display using the same - Google Patents
Etching solution composition and preparing method of an array substrate for display using the same Download PDFInfo
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- KR20180000899A KR20180000899A KR1020160079161A KR20160079161A KR20180000899A KR 20180000899 A KR20180000899 A KR 20180000899A KR 1020160079161 A KR1020160079161 A KR 1020160079161A KR 20160079161 A KR20160079161 A KR 20160079161A KR 20180000899 A KR20180000899 A KR 20180000899A
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- South Korea
- Prior art keywords
- acid
- oxide film
- indium oxide
- etching
- forming
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 57
- 239000000203 mixture Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims description 28
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 43
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000001412 amines Chemical class 0.000 claims abstract description 9
- 150000007524 organic acids Chemical class 0.000 claims abstract description 8
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims abstract description 7
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 63
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 235000002906 tartaric acid Nutrition 0.000 claims description 6
- 239000011975 tartaric acid Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- GXELTROTKVKZBQ-UHFFFAOYSA-N n,n-dibenzylhydroxylamine Chemical compound C=1C=CC=CC=1CN(O)CC1=CC=CC=C1 GXELTROTKVKZBQ-UHFFFAOYSA-N 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 claims description 2
- QIFONSOPELNNAF-UHFFFAOYSA-N C(C)N(O)CC.C(C)N(O)CC Chemical compound C(C)N(O)CC.C(C)N(O)CC QIFONSOPELNNAF-UHFFFAOYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- DQPBABKTKYNPMH-UHFFFAOYSA-N amino hydrogen sulfate Chemical compound NOS(O)(=O)=O DQPBABKTKYNPMH-UHFFFAOYSA-N 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 claims description 2
- CPQCSJYYDADLCZ-UHFFFAOYSA-N n-methylhydroxylamine Chemical compound CNO CPQCSJYYDADLCZ-UHFFFAOYSA-N 0.000 claims description 2
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 claims description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 2
- 235000011151 potassium sulphates Nutrition 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- CYVJAPJMVQTBPB-UHFFFAOYSA-N C(C)(=O)N(OC(C)=O)C(C)=O.C(C)(=O)N(OC(C)=O)C(C)=O Chemical compound C(C)(=O)N(OC(C)=O)C(C)=O.C(C)(=O)N(OC(C)=O)C(C)=O CYVJAPJMVQTBPB-UHFFFAOYSA-N 0.000 claims 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims 1
- 229910000343 potassium bisulfate Inorganic materials 0.000 claims 1
- 229910052939 potassium sulfate Inorganic materials 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- -1 halide compound Chemical class 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- NGULNJDDRUSDPR-UHFFFAOYSA-N (diacetylamino) acetate Chemical compound CC(=O)ON(C(C)=O)C(C)=O NGULNJDDRUSDPR-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- NEAPKZHDYMQZCB-UHFFFAOYSA-N N-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]ethyl]-2-oxo-3H-1,3-benzoxazole-6-carboxamide Chemical compound C1CN(CCN1CCNC(=O)C2=CC3=C(C=C2)NC(=O)O3)C4=CN=C(N=C4)NC5CC6=CC=CC=C6C5 NEAPKZHDYMQZCB-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- ABDMOMCGBHCTMN-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[O-2].[In+3] ABDMOMCGBHCTMN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
본 발명은, 화소 전극으로 사용되는 인듐 산화막의 식각공정에 사용되는 인듐 산화막 식각액 조성물, 이를 이용하는 식각방법, 및 이를 이용하는 표시장치용 TFT 어레이 기판의 제조방법에 관한 것이다.The present invention relates to an indium oxide etchant composition used in an etching process of an indium oxide film used as a pixel electrode, an etching method using the same, and a manufacturing method of a TFT array substrate for a display device using the same.
액정 표시 소자(liquid crystal display device, LCD device)는 뛰어난 해상도에 따른 선명한 영상을 제공하며 전기를 적게 소모하고 디스플레이 화면을 얇게 만들 수 있게 하여 준다는 특성 때문에 평판 디스플레이 장치 중 가장 각광을 받고 있다. 오늘날 이러한 액정 등에 사용되는 표시 소자를 구동하는 전자 회로로서 대표적인 것은 박막 트랜지스터(thin film transistor, TFT) 회로로서 전형적인 박막 트랜지스터 액정표시(TFT-LCD) 소자는 디스플레이 화면의 화소(pixel)를 이루고 있다. TFT-LCD 소자에서 스위칭 소자로 작용하는 TFT는 매트릭스 형태로 배열한 TFT용기판과 그 기판을 마주 보는 컬러 필터 기판 사이에 액정 물질을 채워 제조한 것이다. TFT-LCD의 전체 제조 공정은 크게 TFT 기판 제조 공정, 컬러 필터 공정, 셀 공정, 모듈 공정으로 나뉘는데 정확하고 선명한 영상을 나타내는 데 있어서 TFT 기판과 컬러 필터 제조 공정의 중요성은 매우 크다.A liquid crystal display device (LCD device) is one of the most popular flat panel display devices because it provides clear images according to excellent resolution, consumes less electricity, and makes a display screen thinner. A typical example of an electronic circuit for driving a display element used in such a liquid crystal display today is a thin film transistor (TFT) circuit, and a typical thin film transistor liquid crystal display (TFT-LCD) element constitutes a pixel of a display screen. TFTs serving as switching elements in TFT-LCD devices are manufactured by filling a liquid crystal material between a TFT container plate arranged in a matrix form and a color filter substrate facing the substrate. The overall manufacturing process of TFT-LCD is divided into TFT substrate manufacturing process, color filter process, cell process, and module process. TFT substrate and color filter manufacturing process are very important in showing accurate and clear images.
TFT-LCD 장치의 화소 표시 전극 제조에는 투명한 광학적 특성을 가지면서 전기 전도도가 높은 물질로 된 박막이 필요한데, 현재 산화인듐(indium oxide)을 기반으로 한 산화인듐주석(Indium Tin Oxide, ITO)과 산화인듐아연(Indium Zinc Oxide, IZO)이 투명도전막의 재료로 쓰이고 있다. 화소표시 전극에 원하는 전기회로의 선로를 구현하려면 회로 패턴대로 박막층을 깎아내는 식각 (蝕刻, etching) 과정이 필요하다.In the manufacture of pixel display electrodes for TFT-LCD devices, a thin film made of a material having high optical conductivity and high electrical conductivity is required. Currently, indium tin oxide (ITO) based on indium oxide Indium zinc oxide (IZO) is used as a material for the transparent conductive film. In order to realize a line of a desired electric circuit on a pixel display electrode, etching (etching) process of cutting a thin film layer in accordance with a circuit pattern is required.
그러나 금속 이중층의 식각에 흔히 쓰이는 기존 식각액으로는 산화물인 ITO의 강한 내화학성 때문에 ITO나 IZO소재의 투명도전막을 에칭하기 어려웠다. 구체적으로 왕수(aqua regia, HCl+CH3COOH+HNO3)나 염산제2철(III)의 염산 용액(FeCl3/HCl),옥살산 수용액이 투명도전막 습식 식각액이 사용되어 왔지만, 왕수계 식각액 또는 염산제2철의 염산 용액을 이용하여 ITO 막을 식각하는 경우 가격은 저렴하나 패턴의 측면에서 더 빨리 식각되서 프로파일(profile)이 불량하며, 하부 금속에 화학적 어택(Attack)을 발생시킬 수 있다. 옥살산 (Oxalic Acid)을 이용하여 비정질ITO (amorphous Indium Tin Oxide)를 식각하기도 하지만, 이러한 경우 ITO 패턴 주위에 잔사가 발생하기 쉬우며, 저온에서 옥살산의 용해도가 낮아 석출물이 발생하여 식각 장비 고장을 발생시키는 문제가 있다.However, it is difficult to etch the transparent conductive film of ITO or IZO due to the strong chemical resistance of the ITO, which is an oxide, which is commonly used for etching the metal double layer. Specifically, a transparent electrolytic wet etching solution of aqua regia (HCl + CH 3 COOH + HNO 3), a hydrochloric acid solution of ferric chloride (FeCl 3 / HCl) or an oxalic acid aqueous solution has been used, The etch rate of the ITO film using the hydrochloric acid solution is lower than that of the ITO film but is etched faster in terms of the pattern, resulting in a poor profile and a chemical attack on the underlying metal. Amorphous ITO (amorphous indium tin oxide) is etched using oxalic acid. However, in this case, residue is easily generated around the ITO pattern, and since the solubility of oxalic acid is low at low temperature, .
한편, 대한민국 공개특허 제10-2010-0053175호에는 함할로겐화합물, 질산, 아졸화합물 등으로 구성된 식각액 조성물로 인듐산화막을 포함하는 단일막 또는 다층막을 식각하는 식각액 조성물을 제시하였으나, 상기 종래의 식각액 조성물은 느린 횡방향 에칭속도로 인해 사이드 에치(Side Etching)량이 작으며, 큰 하부막(실리콘층, 구리막) 어택(Attack)으로 인한 로스(loss) 발생 큰 문제점이 있다.Korean Patent Laid-Open No. 10-2010-0053175 discloses an etchant composition for etching a single film or a multilayer film containing an indium oxide film with an etchant composition composed of a halide compound, nitric acid, azole compound, etc. However, A side etching amount is small due to a slow lateral etching rate and a large loss occurs due to an attack of a large lower film (silicon layer, copper film).
본 발명은, 표시장치용 TFT 어레이 기판의 화소전극으로 사용되고 있는 인듐 산화막의 식각공정 시, 빠른 식각속도로 인듐 산화막을 모두 효과적으로 식각 할 수 있어서 식각공정의 효율성을 극대화 시킬 뿐만 아니라, 하부 금속(구리)및 실리콘층에 대한 화학적 어택(attack)이 없어, 박막트랜지스터-표시소자의 구동 특성을 향상 시키는 인듐 산화막 식각액 조성물, 이를 이용하는 식각방법, 및 이를 이용하는 표시장치용 TFT 어레이 기판의 제조방법을 제공하는 것을 목적으로 한다.INDUSTRIAL APPLICABILITY The present invention can effectively etch all indium oxide films at a high etching rate in an etching process of an indium oxide film used as a pixel electrode of a TFT array substrate for a display device, thereby maximizing the efficiency of the etching process, ) And a silicon layer without a chemical attack, thereby improving the driving characteristics of the thin film transistor-display element, an etching method using the same, and a manufacturing method of a TFT array substrate for a display using the same .
상기 목적을 달성하기 위하여, 식각액 조성물 총 중량에 대하여, A) 술팜산 3 내지 30 중량%, B)황산염 0.1 내지 10 중량%, C) 아민류 0.1 내지 5중량 %, D) 유기산 0.1 내지 5중량 %, 및 잔량의 물을 포함하는 인듐 산화막용 식각액 조성물을 제공한다. (B) 0.1 to 10% by weight of sulfuric acid, (C) 0.1 to 5% by weight of an amine, (D) 0.1 to 5% by weight of an organic acid, , And water of a remaining amount.
또한, 본 발명은 (1) 기판 상에 인듐산화막을 형성하는 단계;(1) forming an indium oxide film on a substrate;
(2)상기 인듐산화막 상에 선택적으로 광반응 물질을 남기는 단계; 및(2) selectively leaving a photoreactive material on the indium oxide film; And
(3)본 발명의 식각액 조성물을 사용하여 상기 인듐산화막을 식각하는 단계;를 포함하는 인듐산화막 식각방법을 제공한다.(3) etching the indium oxide film using the etching solution composition of the present invention.
또한, 본 발명은 (1)기판 상에 게이트 배선을 형성하는 단계;The present invention also provides a method of manufacturing a semiconductor device, comprising: (1) forming a gate wiring on a substrate;
(2)상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계;(2) forming a gate insulating layer on the substrate including the gate wiring;
(3)상기 게이트 절연층 상에 산화물 반도체층을 형성하는 단계;(3) forming an oxide semiconductor layer on the gate insulating layer;
(4)상기 산화물 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및(4) forming source and drain electrodes on the oxide semiconductor layer; And
(5)상기 드레인 전극에 연결된 화소 전극을 형성하는 단계;를 포함하는 표시장치용 어레이 기판의 제조방법에 있어서,(5) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
상기 (5)단계는 인듐산화막을 형성하고, 상기 인듐산화막을 식각액 조성물로 식각하여 화소 전극을 형성하는 단계를 포함하며,The step (5) includes forming an indium oxide film and etching the indium oxide film with an etchant composition to form a pixel electrode,
상기 식각액 조성물은 본 발명의 인듐산화막 식각액 조성물인 것을 특징으로 하는 표시 장치용 어레이 기판의 제조방법을 제공한다.Wherein the etchant composition is an indium oxide etchant composition of the present invention.
또한, 본 발명은 본 발명의 제조방법으로 제조된 표시 장치용 어레이 기판을 제공한다.The present invention also provides an array substrate for a display device manufactured by the manufacturing method of the present invention.
본 발명의 식각액 조성물은 인듐 산화막을 효과적으로 식각 할 수 있어서 식각 공정의 효율성을 극대화 시킬 뿐만 아니라, 하부 금속에 대한 어택(attack)이 없으며, 박막트랜지스터-표시소자의 구동특성을 향상시킬 수 있다.The etchant composition of the present invention can effectively etch the indium oxide film, thereby maximizing the efficiency of the etching process, without attacking the underlying metal, and improving the driving characteristics of the thin film transistor-display device.
본 발명은 인듐 산화막에 대한 식각액 조성물 및 이를 이용한 식각방법에 관한 것으로, A) 술팜산, B)황산염, C) 아민류, D) 유기산 및 물을 특정 비율로 포함하는 경우, 표시장치용 TFT 어레이 기판의 화소전극으로 사용되고 있는 인듐 산화막의 식각공정 시, 인듐 산화막을 효과적으로 식각 할 수 있어서 공정의 효율성을 극대화 시킬 뿐만 아니라, 하부 금속(구리)에 대한 어택(attack)이 없고, 박막트랜지스터-표시소자의 구동 특성을 향상 시키며, 기판의 크기가 커도 식각 균일성이 유지되는 특성을 가짐을 실험적으로 확인하여 완성되었다. The present invention relates to an etchant composition for an indium oxide film and an etching method using the same, and more particularly, to an etchant composition for an indium oxide film, The indium oxide film can be effectively etched during the etching process of the indium oxide film used as the pixel electrode of the TFT, thereby not only maximizing the efficiency of the process but also preventing the attack of the lower metal (copper) It has been experimentally confirmed that it has characteristics that the driving characteristics are improved and the etching uniformity is maintained even if the substrate size is large.
이하, 본 발명을 보다 자세히 설명한다.Hereinafter, the present invention will be described in more detail.
A) 술팜산 A) Sulfamic acid
본 발명의 식각액 조성물에 포함되는 술팜산은 인듐 산화막의 주 산화제로서 인듐 산화막을 식각하는 역할을 한다. 인듐 산화막에 대하여 우수한 식각 성능을 가지고 빠른 인듐 산화막 식각속도로 공정에서 요구되는 큰 사이드 에칭을 확보한다. The sulfamic acid contained in the etching solution composition of the present invention serves to etch the indium oxide film as the main oxidizing agent of the indium oxide film. It has an excellent etching performance for the indium oxide film and secures the large side etching required for the process with a fast indium oxide film etching rate.
본 발명의 술팜산은, 조성물 총 중량에 대하여, 3 내지 30 중량%로 포함되고, 바람직하게는 5 내지 15중량%로 포함된다. 상기 술팜산이 상술한 범위 미만으로 함유되는 경우 인듐 산화막의 식각 속도를 저하시킬 수 있고, 상술한 범위를 초과하는 경우에는 하부 및 인접 금속에 화학적 어택 (Attack)을 발생시킬 수 있으며, 빠른 식각속도로 인해 공정 컨트롤이 어렵다.The sulfamic acid of the present invention is contained in an amount of 3 to 30 wt%, preferably 5 to 15 wt%, based on the total weight of the composition. If the sulfamic acid content is less than the above-mentioned range, the etching rate of the indium oxide film can be lowered. If the sulfamic acid content is in excess of the above range, a chemical attack can be generated in the lower and adjacent metals. Process control is difficult.
B)황산염 B) Sulfate
본 발명의 식각액 조성물에 포함되는 황산염은 인듐 산화막의 보조산화제 및 처리매수 증가시 잔사를 제어하는 역할을 한다. The sulfate contained in the etchant composition of the present invention plays a role of controlling the residues when the amount of the auxiliary oxidizing agent and the treatment amount of the indium oxide film is increased.
구체적인 예로는, 황화 나트륨(Sodium Sulfate), 황화칼륨 (Potassium Sulfate), 황화암모늄(Ammonium Sulfate), 및 황산수소칼륨(Potassium Hydrogen Sulfate) 중에서 선택된 1종 단독 또는 2종 이상의 혼합물을 포함하는 것을 특징으로 한다. Specific examples thereof include a single substance or a mixture of two or more substances selected from sodium sulfates, potassium sulfates, ammonium sulfates, and potassium hydrogen sulphates do.
황산염은 조성물의 총 중량에 대하여 0.1 내지 10중량% 포함되고 바람직하게는 0.5 내지 5 중량%로 포함된다. 상술한 범위 미만으로 포함되는 경우, 인듐 산화막 식각 속도를 저하시킬 수 있으며 처리매수 증가시 잔사를 발생시킬 수 있다. 상술한 범위를 초과하여 포함되는 경우, 빠른 식각속도로 인해 공정 컨트롤이 어렵다The sulfate is included in an amount of 0.1 to 10% by weight, and preferably 0.5 to 5% by weight, based on the total weight of the composition. If it is contained below the above-mentioned range, the etching rate of the indium oxide film may be lowered, and residues may be generated when the number of treatments is increased. When included in excess of the above-mentioned range, it is difficult to control the process due to the rapid etching rate
C) 아민류 C) Amines
본 발명의 식각액 조성물에 포함되는 아민류는 메탈(Metal) 킬레이트제로 처리매수 진행시 사이드 에치(Side Etch) 변화량을 향상시킨다. The amines contained in the etchant composition of the present invention improve the amount of side etch change during the processing of the metal chelating agent.
상기 아민류는 하이드록실 아민(Hydroxylamine)을 포함하는 화합물일 수 있으며, 구체적으로 하이드록실 아민(Hydroxylamine), 하이드록실아민-o-설폰산(hydroxylamine-o-sulfonic acid), 하이드록실아민 설페이트(hydroxylamine sulfate), N,N-디에틸하이드록실아민(N,N-Diethylhydroxylamine), N-메틸하이드록실아민(N-Methylhydroxylamine), N,N-디벤질하이드록실아민(N,N-Dibenzylhydroxylamine), 및 N,N,O-트리아세틸하이드록실아민(N,N,O-Triacetylhydroxylamine)으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상을 포함하는 것이 바람직하며, 이 중 N,N-디에틸하이드록실아민(N,N-Diethylhydroxylamine)이 적합하다.The amines may be hydroxylamine-containing compounds. Specific examples of the amines include hydroxylamine, hydroxylamine-o-sulfonic acid, hydroxylamine sulfate ), N, N-diethylhydroxylamine, N-methylhydroxylamine, N, N-dibenzylhydroxylamine, and N , N, O-triacetylhydroxylamine (N, O-triacetylhydroxylamine). Of these, N, N-diethylhydroxylamine N, N-Diethylhydroxylamine) are suitable.
아민류는, 조성물 총 중량에 대하여, 0.1 내지 5.0중량%로 포함되고, 바람직하게는 0.3 내지 3.0중량%로 포함된다. 상술한 범위 미만으로 포함되면, 처리매수 진행시 side etch 변화량이 증가하고, 상술한 범위를 초과하여 포함되면, 식각 속도가 너무 느려져 식각시간(Etch time)이 길어져 생산량 감소를 발생시킨다.Amines are included in an amount of 0.1 to 5.0% by weight, preferably 0.3 to 3.0% by weight, based on the total weight of the composition. If the amount is less than the above-mentioned range, the amount of side etch change is increased during the number of treatments, and if the amount exceeds the above range, the etching rate becomes too slow, and the etching time becomes long.
D) 유기산 D) Organic acid
본 발명의 식각액 조성물에 포함되는 유기산은 pH를 적당히 맞추어 주어 식각액의 환경을 인듐 산화막이 식각되기 용이하게 만든다. The pH of the organic acid contained in the etching solution composition of the present invention is suitably adjusted to facilitate the etching of the indium oxide film in the etching solution environment.
유기산은 주석산(Tartaric Acid), 아세트산(acetic acid), 부탄산(butanoic acid), 시트르산(citric acid), 포름산(formic acid), 글루콘산(gluconic acid), 글리콜(glycolic acid), 말론산(malonic acid), 펜탄산(pentanoic acid) 및 옥살산(oxalic acid) 으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상을 포함하는 것이 바람직하며, 이 중 주석산(Tartaric Acid)이 적합하다.The organic acids may be selected from the group consisting of tartaric acid, acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, acid, pentanoic acid, and oxalic acid. Of these, Tartaric Acid is suitable. The term " tartaric acid "
유기산 화합물 조성물 총중량에 대하여, 0.1 내지 5.0 중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 0.3 내지 3.0 중량%로 포함되는 것이 좋다. 상술한 범위 미만으로 포함되면 공정에 적합한 pH를 조절하는 영향력이 부족하여 0.5 내지 4.5 정도의 pH 유지가 어려워진다. 또한 상술한 범위를 초과하면 인듐 산화막 식각속도가 빨라져 씨디로스(CD Loss)가 너무 커지게 된다.Is preferably contained in an amount of 0.1 to 5.0% by weight, more preferably 0.3 to 3.0% by weight, based on the total weight of the organic acid compound composition. If the amount is less than the above-mentioned range, the influence of controlling the pH suitable for the process is insufficient and it is difficult to maintain the pH of about 0.5 to 4.5. In addition, if the above-mentioned range is exceeded, the etch rate of the indium oxide film becomes faster and the CD loss becomes too large.
물water
본 발명의 식각액 조성물에 포함되는 물은 조성물 총 중량이 100 중량%가 되도록 잔량 포함된다. 상기 물은 특별히 한정하지 않으나, 탈이온수를 이용하는 것이 바람직하다. 그리고, 상기 물은 물속에 이온이 제거된 정도를 보여주는 물의 비저항값이 18㏁·㎝ 이상인 탈이온수를 이용하는 것이 보다 바람직하다.Water contained in the etchant composition of the present invention is contained in such an amount that the total weight of the composition is 100% by weight. The water is not particularly limited, but it is preferable to use deionized water. Further, it is more preferable to use deionized water having a specific resistance of water of 18 M OMEGA. Or more to show the degree of removal of ions in water.
본 발명에서 사용되는 A) 술팜산, B)황산염, C) 아민류, D) 유기산 등은 통상적으로 공지된 방법에 의해서 제조가 가능하며, 본 발명의 식각액 조성물은 반도체 공정용의 순도를 가지는 것이 바람직하다. It is preferable that the etching solution composition of the present invention has a purity for semiconductor processing, and it is preferable that the etching solution composition of the present invention has a purity for semiconductor processing Do.
또한, 본 발명은 In addition,
(1)기판 상에 금속막을 형성하는 단계;(1) forming a metal film on a substrate;
(2)상기 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및(2) selectively leaving a photoreactive material on the metal film; And
(3)상기 본 발명의 식각액 조성물을 사용하여 상기 금속막을 식각하는 단계를 포함하는 금속막 식각방법에 관한 것이다.(3) etching the metal film using the etchant composition of the present invention.
본 발명의 식각방법에서, 상기 광반응 물질은 통상적인 포토레지스트 물질인 것이 바람직하며, 통상적인 노광 및 현상 공정에 의해 선택적으로 남겨질 수 있다.In the etching method of the present invention, the photoreactive material is preferably a conventional photoresist material, and may be selectively left by conventional exposure and development processes.
또한, 상기 금속막은 인듐산화막을 포함하는 단일막 또는 다층막이다.The metal film is a single film or a multilayer film including an indium oxide film.
상기 인듐산화막은 인듐주석산화막(ITO), 인듐아연산화막(IZO) 및 인듐갈륨아연산화막(IGZO)으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것이다.The indium oxide film includes at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO).
또한, 본 발명은In addition,
(1)기판 상에 게이트 배선을 형성하는 단계;(1) forming a gate wiring on a substrate;
(2)상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계;(2) forming a gate insulating layer on the substrate including the gate wiring;
(3)상기 게이트 절연층 상에 산화물 반도체층을 형성하는 단계;(3) forming an oxide semiconductor layer on the gate insulating layer;
(4)상기 산화물 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및(4) forming source and drain electrodes on the oxide semiconductor layer; And
(5)상기 드레인 전극에 연결된 화소 전극을 형성하는 단계;를 포함하는 표시장치용 어레이 기판의 제조방법에 있어서,(5) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
상기 (5)단계는 금속막을 형성하고, 상기 금속막을 식각액 조성물로 식각하여 화소 전극을 형성하는 단계를 포함하며,In the step (5), a metal film is formed, and the metal film is etched with an etchant composition to form a pixel electrode,
상기 식각액 조성물은 상기 본 발명의 식각액 조성물인 것을 특징으로 하는 표시 장치용 어레이 기판의 제조방법에 관한 것이다.Wherein the etchant composition is the etchant composition of the present invention.
또한, 상기 금속막은 인듐산화막을 포함하는 단일막 또는 다층막이다.The metal film is a single film or a multilayer film including an indium oxide film.
상기 인듐산화막은 인듐주석산화막(ITO), 인듐아연산화막(IZO) 및 인듐갈륨아연산화막(IGZO)으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것이다.The indium oxide film includes at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO).
본 발명의 식각액 조성물로 상기 금속막을 식각하여, 상기 (5)단계의 화소 전극을 형성할 수 있다.The metal film may be etched with the etchant composition of the present invention to form the pixel electrode in the step (5).
또한, 상기 표시장치용 어레이 기판은 박막트랜지스터(TFT) 어레이 기판일 수 있다.Further, the array substrate for a display device may be a thin film transistor (TFT) array substrate.
또한, 본 발명은 상기 제조방법으로 제조된 표시 장치용 어레이 기판에 관한 것이다.The present invention also relates to an array substrate for a display device manufactured by the above manufacturing method.
상기 표시 장치용 어레이 기판은 본 발명의 금속막 식각액 조성물을 사용하여 식각된 화소 전극을 포함한다.The array substrate for a display device includes a pixel electrode that is etched using the metal film etchant composition of the present invention.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다.Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
<< 식각액Etchant 조성물 제조> Composition Preparation>
실시예1Example 1 내지 To 실시예3Example 3 , , 비교예1Comparative Example 1 내지 To 비교예4Comparative Example 4 : : 식각액Etchant 조성물의 제조 Preparation of composition
하기 표 1에 나타낸 조성에 따라 실시예1 내지 실시예3 및 비교예1 내지 비교예4의 식각액 조성물 180㎏을 제조하였으며, 식각액 조성물 총 중량이 100 중량%가 되도록 잔량의 물을 포함하였다. 표 1에서 단위는 중량%이다. 180 kg of the etchant compositions of Examples 1 to 3 and Comparative Examples 1 to 4 were prepared according to the composition shown in Table 1 below and the remaining amount of water was included so that the total weight of the etchant composition was 100% by weight. In Table 1, the unit is wt%.
실험예Experimental Example 1. One. 인듐산화막Indium oxide film 식각Etching 평가 evaluation
유리기판(100㎜Ⅹ100㎜) 상에 인듐산화막을 증착시킨 뒤 포토리소그래피(photolithography) 공정을 통하여 기판 상에 소정의 패턴을 가진 포토레지스트가 형성되도록 하였다.그 후, 실시예1 내지 실시예3, 비교예1 내지 비교예4의 식각액 조성물을 각각 사용하여 인듐산화막에 대하여 식각 공정을 실시하였다.An indium oxide film was deposited on a glass substrate (100 mm x 100 mm), and then photoresist having a predetermined pattern was formed on the substrate through a photolithography process. Then, in Examples 1 to 3, The etching process was performed on the indium oxide film using the etching liquid compositions of Comparative Examples 1 to 4, respectively.
분사식 식각 방식의 실험장비(모델명: ETCHER(TFT), SEMES사)를 이용하였고, 식각 공정시 식각액 조성물의 온도는 약 35℃ 내외로 하였다. 식각 시간은 50~100초 정도로 진행하였다. 상기 식각 공정에서 식각된 인듐산화막의 프로파일을 단면 SEM(Hitachi사 제품, 모델명 S-4700)을 사용하여 검사하였고, 결과를 하기 표 2에 기재하였다.A spray-type etching system (model name: ETCHER (TFT), manufactured by SEMES) was used, and the temperature of the etching composition was set to about 35 ° C during the etching process. The etching time was about 50 to 100 seconds. The profile of the etched indium oxide film in the etching process was inspected using a cross-sectional SEM (product of Hitachi, model name S-4700), and the results are shown in Table 2 below.
(ITO 0~2000ppm)Number of processed S / E changes
(ITO 0 to 2000 ppm)
DamageBottom membrane
Damage
식각속도의 경우 20~28 범위에서 Side Etch특성 확보에 유리하며, Etch Profile은 Etch 후 배선의 직진성을 의미하며, 직진성이 좋을수록 CD 변동량이 줄어 신뢰성 측면에서 유리하다. 또한, 잔사 발생은 TFT 특성에 영향을 주어 잔사 발생을 막는 것이 중요하며, 처리매수에 따른 S/E 변동량이 적을수록 공정마진 유리하다. 실험결과 본원의 식각 조성물의 경우, 식각속도, 식각 프로파일, 잔사 처리매수 S/E 변화량, 하부막 손상 및 pH 의 측면에서 모두 우수함을 확인하였다. The etch rate is advantageous for securing the side etch characteristics in the range of 20 ~ 28, and the Etch Profile means the straightness of the post-etch wiring, and as the straightness is better, the CD variation is more advantageous in terms of reliability. In addition, it is important to prevent residue from affecting the TFT characteristics by the occurrence of residue, and the process margin is advantageous as the S / E variation according to the number of treatments is small. As a result of the experiment, it was confirmed that the etching composition of the present invention is excellent in terms of etching rate, etching profile, S / E change amount of the residue, lower film damage and pH.
Claims (9)
C) from 0.1 to 5% by weight of an amine, D) from 0.1 to 5% by weight of an organic acid, and a balance of water, based on the total weight of the etching composition, A) 3 to 30% by weight of sulfamic acid, Wherein the etchant composition is an indium oxide film.
The method of claim 1, wherein the sulfate comprises at least one selected from the group consisting of sodium sulfate, potassium sulfate, ammonium sulfate, and potassium hydrogen sulfate. ≪ / RTI >
The method of claim 1, wherein the amine is selected from the group consisting of hydroxylamine, hydroxylamine-o-sulfonic acid, hydroxylamine sulfate, N, N-diethylhydroxylamine (N, N-diethylhydroxylamine), N-methylhydroxylamine, N, N-dibenzylhydroxylamine, and N, N, O-triacetylhydroxylamine N, N, O-triacetylhydroxylamine). ≪ / RTI >
The method of claim 1, wherein the organic acid is selected from the group consisting of tartaric acid, acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid ), Malonic acid, pentanoic acid, and oxalic acid. The etching solution composition according to claim 1,
The etchant composition of claim 1, wherein the organic acid is tartaric acid.
The etchant composition of claim 1, wherein the indium oxide film comprises at least one selected from the group consisting of an indium tin oxide film, an indium zinc oxide film, and an indium gallium zinc oxide film.
(2)상기 인듐산화막 상에 선택적으로 광반응 물질을 남기는 단계; 및
(3)청구항 1 내지 청구항 6 중 어느 한 항의 식각액 조성물을 사용하여 상기 인듐산화막을 식각하는 단계;를 포함하는 인듐산화막 식각방법.
(1) forming an indium oxide film on a substrate;
(2) selectively leaving a photoreactive material on the indium oxide film; And
(3) etching the indium oxide film using the etching solution composition of any one of claims 1 to 6. [
(2)상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계;
(3)상기 게이트 절연층 상에 산화물 반도체층을 형성하는 단계;
(4)상기 산화물 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및
(5)상기 드레인 전극에 연결된 화소 전극을 형성하는 단계;를 포함하는 표시장치용 어레이 기판의 제조방법에 있어서,
상기 (5)단계는 인듐산화막을 형성하고, 상기 인듐산화막을 식각액 조성물로 식각하여 화소 전극을 형성하는 단계를 포함하며,
상기 식각액 조성물은 청구항 1 내지 청구항 6 중 어느 한 항의 인듐산화막 식각액 조성물인 것을 특징으로 하는 표시 장치용 어레이 기판의 제조방법.
(1) forming a gate wiring on a substrate;
(2) forming a gate insulating layer on the substrate including the gate wiring;
(3) forming an oxide semiconductor layer on the gate insulating layer;
(4) forming source and drain electrodes on the oxide semiconductor layer; And
(5) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
The step (5) includes forming an indium oxide film and etching the indium oxide film with an etchant composition to form a pixel electrode,
Wherein the etchant composition is the indium oxide etchant composition of any one of claims 1 to 6.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002367974A (en) * | 2001-06-04 | 2002-12-20 | Mitsubishi Gas Chem Co Inc | Etching agent composition for transparent conductive film |
| KR20100053175A (en) | 2008-11-12 | 2010-05-20 | 테크노세미켐 주식회사 | Etchant for transparent conductive ito films |
| KR20140082186A (en) * | 2012-12-24 | 2014-07-02 | 동우 화인켐 주식회사 | Etchant composition for Ag thin layer and method for fabricating metal pattern using the same |
| KR20150001524A (en) * | 2013-06-27 | 2015-01-06 | 삼성디스플레이 주식회사 | Etchant and manufacturing method of metal wiring and thin film transistor substrate using the same |
| KR20150032487A (en) * | 2013-09-18 | 2015-03-26 | 간토 가가꾸 가부시키가이샤 | A metal oxide etching solution and an etching method |
| KR20150089887A (en) * | 2014-01-28 | 2015-08-05 | 동우 화인켐 주식회사 | Etching solution composition for copper layer and titanium layer and method of preparing array substrate for liquid crystal display using the same |
-
2016
- 2016-06-24 KR KR1020160079161A patent/KR102459686B1/en active IP Right Grant
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002367974A (en) * | 2001-06-04 | 2002-12-20 | Mitsubishi Gas Chem Co Inc | Etching agent composition for transparent conductive film |
| KR20100053175A (en) | 2008-11-12 | 2010-05-20 | 테크노세미켐 주식회사 | Etchant for transparent conductive ito films |
| KR20140082186A (en) * | 2012-12-24 | 2014-07-02 | 동우 화인켐 주식회사 | Etchant composition for Ag thin layer and method for fabricating metal pattern using the same |
| KR20150001524A (en) * | 2013-06-27 | 2015-01-06 | 삼성디스플레이 주식회사 | Etchant and manufacturing method of metal wiring and thin film transistor substrate using the same |
| KR20150032487A (en) * | 2013-09-18 | 2015-03-26 | 간토 가가꾸 가부시키가이샤 | A metal oxide etching solution and an etching method |
| KR20150089887A (en) * | 2014-01-28 | 2015-08-05 | 동우 화인켐 주식회사 | Etching solution composition for copper layer and titanium layer and method of preparing array substrate for liquid crystal display using the same |
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