KR20170126825A - Converter and Inverter Power Stack Using the Module Type IGBT for the High Speed Railway - Google Patents

Abstract

According to the present invention, disclosed is a power stack of a propulsion control apparatus for a high-speed train using a modular IGBT. A modular IGBT of a 4500V/1200A class is composed of a power semiconductor element, and a converter/inverter power stack of a 2800 VDC 2.5 MW class of two-parallel circuit forming one arm with two of the modular IGBTs. Therefore, the reliability and the accuracy can be secured by improving power stack assembling and manufacturing processes, and the time and costs for a factory power test can be reduced.

Description

[0001] The present invention relates to a power stack of a propulsion control device for a high-speed railway vehicle using a modular IGBT (a converter and an inverter power stack using the module type IGBT for the high speed railway)

The present invention relates to a propulsion control apparatus for a high-speed train, and more particularly, to a modular IGBT capable of configuring a 2800VDC 2.5MW converter / inverter power stack using a 4500V / 1200A class module IGBT as a power semiconductor device To a power stack of a propulsion control apparatus for a high-speed electric train using the same.

The high-speed train is provided with a propulsion control device, and the propulsion control device controls the electric current supplied to the electric motor to generate propulsion for driving the electric motor.

1, the propulsion control apparatus for a high-speed train includes a main transformer 10, a plurality of propulsion devices 20A and 20B and a plurality of controllers 30A and 30B, 20A) 20B are provided with a plurality of converters 21, 22 and an inverter 23, respectively.

Therefore, the converters 21 and 22 convert the AC 1,400V reduced from the line voltage AC 25,000V through the main transformer 10 to DC 2,800V and the DC 2,800V through the inverter 23 to AC 0- And the voltage is supplied to the traction motors IM1 and IM2 (IM3 and IM4) according to the train running speed and the operation command.

That is, in the propulsion control device for high-speed electric trains, after the MCB (Main Circuit Breaker) is charged, AC 1,400V reduced from the line voltage AC 25,000V through the main transformer 10 is supplied to the plurality of propulsion devices 20A and 20B The converters 21 and 22 boost the input AC voltage of 1,400 V to 2,800 V DC to supply energy to the DC link.

Here, when the converters 21 and 22 perform the constant DC voltage control, it is confirmed that the DC link voltage is maintained at 2,800 V and the DC link voltage is maintained at 2,800 V, The inverter 23 provided in each of the traction motors 20A and 20B converts the DC 2,800 V to AC 0-2,183 V and then varies it according to the train running speed and the operation command so that the traction motors IM1 and IM2 Respectively.

2, the power circuit of the propulsion control apparatus for a high-speed railway vehicle includes a plurality of converter circuit portions 40, an inverter circuit portion 50 and a braking chopper 60, and the plurality of converter circuit portions 40 ) Of the first and second groups are composed of two power stacks, and the inverter circuit portion 50 is composed of three power stacks .

In this case, the power stack is used in power conversion between the converter circuit unit 40 and the inverter circuit unit 50, and the power stack is a disk-shaped power supply in which a switching operation is performed for power conversion, Type semiconductor diodes D1 and D2 connected in parallel to the disk-shaped power semiconductor devices IG1 and IG2, and a power semiconductor device IG1 (IG2) A first and a second gate drive unit GDU1 and GDU2 for driving the power semiconductor devices IG1 and IG2 for turning on and off the power semiconductor devices IG1 and IG2; A snubber capacitor SC and a cooling device 71 connected to the cooling device 71 through a cooling pipe 71 so as to cool the heat generated as switching loss and conduction loss generated during switching and conduction of the power semiconductor devices IG1 and IG2 70).

However, the conventional 2.5MW power stack for a high-speed vehicle uses a disk type of 4500V / 2400A class in capacity of the power semiconductor elements IG1 and IG2 and diodes D1 and D2, Since the power semiconductor elements IG1 and IG2 and the diodes D1 and D2 connected in parallel are composed of power topologies IG1 and D1 and IG2 and D2 using two or more than one parallel structures, The power semiconductor device IG1 (IG2) and the diode D1 (D2) must be pressed by a special mechanical device to produce a power stack. On the other hand, a structure for maintaining a high pressing force after compression using a special mechanical device However, since such a structure is designed in consideration of vibration durability and the like, there is a disadvantage in that it is heavy in weight and occupies a large space and a large volume.

Accordingly, when a disk type IGBT is formed of a disk type IG1 (IG2) and a diode D1 (D2) and then a 2.5 MW power stack is constructed using the disk type IGBT, the power as shown in FIG. 4 The entire assembly weight of one stack is about 107 kG, which means that it is disadvantageous in transportation and maintenance.

Also, to verify the reliability of the propulsion control system for high-speed trains, and to verify the power semiconductor device (IG1) (IG2), a power test is performed on the power stack of the converter / inverter before the application to the vehicle The power stack formed using the disk type IGBT including the power semiconductor device IG1 (IG2) and the diode D1 (D2) must be pressed by a high compression force of 50 to 75 kN. Therefore, (IG1) (IG2) to verify the performance and reliability of IGBTs, it is necessary to use the disk type IGBT to perform the whole quantity transfer test on the power stack. .

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a modular IGBT of 4500V / 1200A class as a power semiconductor device, By constructing a 2800VDC 2.5MW converter / inverter power stack of parallel circuits, it is possible to secure reliability and accuracy by improving the power stack assembly and fabrication process, reduce the equipment required for assembly of the power stack, And to provide a power stack of a propulsion control device for a high-speed train using a modular IGBT that can reduce costs.

The power stack of the propulsion control apparatus for a high-speed electric train using the modular IGBT according to the present invention for achieving the above object includes first to fourth IGBTs for performing switching operations for power conversion and first to fourth IGBTs for driving the first to fourth IGBTs A first IGBT and a second IGBT, and a snubber capacitor for stable turn-off operation during a turn-off operation of the first to fourth IGBTs, The third IGBT and the fourth IGBT are formed in parallel, and the first and second IGBTs and the third and fourth IGBTs, which are formed in parallel, are connected to the cooler through the first and second heat pipes, respectively.

The first and second IGBTs and the third and fourth IGBTs arranged in parallel are arranged symmetrically with respect to each other, and the first and second heat pipes are connected to the first and second IGBTs Symmetrical structure in which the first and second IGBTs are symmetrically connected to the third and fourth IGBTs from the cooler.

The first to fourth IGBTs are modular IGBTs each including a power semiconductor element and a diode.

Further, the propulsion control apparatus for high-speed electric trains includes a plurality of converters as power circuits, and each of the plurality of converters is composed of a modular IGBT.

The propulsion control apparatus for a high-speed train includes a plurality of converters as a power circuit, one of the converters is composed of a modular IGBT, and the other of the converters is composed of a disk-type IGBT.

As described above, according to the present invention, a modular IGBT of 4500 V / 1200 A class is constructed as a power semiconductor device, and a 2800 VDC 2.5 MW class converter / inverter power of a 2-parallel circuit constituting one arm (ARM) It is possible to secure the reliability and accuracy by improving the process of assembling and manufacturing the power stack, reducing the equipment required for assembling the power stack, and reducing the time and cost in the factory power test. will be.

That is, the present invention can be effectively applied to the operation and performance confirmation of a propulsion control system for a high-speed vehicle comprising a converter / inverter system running on a railway track, and the requirement for special mechanical devices is reduced and a compression force of 50 to 75 kN is maintained It is possible to expect the effect of reducing the weight because the structure for the above is unnecessary.

Compared with the power stack using the conventional disk IGBT, which is compatible with the same capacity and performance, the weight of the power stack manufactured by applying the modular IGBT is 80% of the weight of the disk IGBT stack, which is 20% It is possible to reduce the equipment and cost required for the test in order to verify the reliability and performance of the power stack.

1 is a configuration diagram of a conventional propulsion control apparatus for a high-speed train.
2 is a power circuit diagram including a converter of a propulsion control device for a high-speed train and an inverter and a chopper circuit.
3 is a circuit diagram of a power stack of a propulsion control apparatus for a high-speed train to which a conventional disk type IGBT is applied.
4 is a structural view of a power stack of a propulsion control apparatus for a high-speed train to which a conventional disk type IGBT is applied.
5 is a circuit diagram of a power stack of a propulsion control apparatus for a high-speed train using a modular IGBT according to an embodiment of the present invention.
6 is a structural view of a power stack of a propulsion control apparatus for a high-speed train using a modular IGBT according to an embodiment of the present invention.
7 is a schematic structural diagram of a modular IGBT and a heat pipe and a cooler according to an embodiment of the present invention.
8 is a waveform diagram of a current share ratio measurement of a power stack to which a modular IGBT is applied according to an embodiment of the present invention.
9 is an input current waveform diagram according to a converter operation of a power circuit to which a modular IGBT and a disk type IGBT are applied in an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 5 is a circuit diagram of a power stack of a propulsion control apparatus for a high-speed electric train using a modular IGBT according to an embodiment of the present invention. FIG. FIG. 7 is a schematic structural diagram of a modular IGBT, a heat pipe and a cooler according to an embodiment of the present invention.

5 to 7, the power stack of the propulsion control apparatus for a high-speed train using the modular IGBT according to the embodiment of the present invention includes first to fourth IGBTs First and second gate drive units GDU1 and GDU2 for driving the modular first to fourth IGBTs M11 and M12 and M21 and M22, And a snubber capacitor SC for stable turn-off operation during turn-off of the switching operation of the modular first to fourth IGBTs M11, M12 (M21, M22), while a modular The first IGBT M11 and the second IGBT M12 in a modular form, the third IGBT M21 and the fourth IGBT M22 in a modular form are arranged in parallel, The first and second module IGBTs M11 and M12 and the module type third and fourth IGBTs M21 and M22 are connected to the cooler 100 through the first and second heat pipes 101 and 102, ), To.

The modular first through fourth IGBTs M11 and M12 M21 and M22 are each formed by a power semiconductor device IG and a diode D connected in parallel to each other. The IGBTs M11 and M12 and the modular third and fourth IGBTs M21 and M22 are symmetrically arranged in the first and second heat pipes 101 and 102. The first and second IGBTs M11 and M12 and the modular third and fourth IGBTs M21 and M22 are arranged symmetrically, The first and second modular IGBTs M11 and M12 symmetrical from the cooler 100 for cooling the 1,2 IGBTs M11 and M12 and the modular third and fourth IGBTs M21 and M22, And the third and fourth IGBTs M21 and M22 of the modular type.

That is, as shown in FIGS. 5 to 7, the power stack of the propulsion controller for a high-speed electric train using a modular IGBT according to an embodiment of the present invention includes a power semiconductor device IG and a diode D M12, M21 and M22 in the four modular IGBTs M11, M12, M21 and M22 and the first and second IGBTs M11 and M12 in the four modular IGBTs M11, And the third and fourth IGBTs M21 and M22 are configured in parallel.

The modular first and second IGBTs M11 and M12 and the modular third and fourth IGBTs M21 and M22 are connected to the first and second gate drive units GDU1 The first and second module IGBTs M11 and M12 and the modular third and fourth IGBTs M21 and M22 are connected to the first and second gate drive units GDU1 and GDU2, And a snubber capacitor SC for stable turn-off operation at the turn-off time is connected by the switch GDU2, and the first and second IGBTs M11 and M12 of the modular type and the modular type The first and second heat pipes 101 and 102 are symmetrically connected to the cooler 100 for cooling the third and fourth IGBTs M21 and M22.

8 is a circuit diagram of the first to fourth IGBTs M11 and M12 (M21 and M22) of the power stack according to the present invention, which is constructed as described above, to the converter circuit portion included in the power circuit of FIG. 2 (IGBTs M11 and M12) connected in parallel and the switching of the modular third and fourth IGBTs M21 and M22 are connected in parallel. It can be seen that the current sharing during operation is efficiently performed, and thus the converter circuit portion of the power circuit performs stable converter operation.

9 is a schematic diagram of a conventional power converter in which two power stacks using a modular IGBT according to an embodiment of the present invention are mounted on a group of converters in a converter circuit portion included in the power circuit of FIG. Figure 2 shows the input current waveform for the converter circuit part of the power circuit in which the power stack with the modular and disk type IGBTs is installed by attaching the two applied power stacks to the two group of converters in the converter circuit part of the power circuit. It can be confirmed that the converter operation is performed stably without interference between the power stack of the modular IGBT and the power stack of the conventional disk type IGBT according to the present invention. Thereby improving the overall operation reliability.

While the present invention has been described in connection with the accompanying drawings, it is to be understood that the invention is not to be limited to the details of the foregoing description, It is not.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined by the appended claims. It is to be understood that such changes and modifications are within the scope of the claims.

* 100; Cooler 101; The first heat pipe
102; The second heat pipe

Claims (5)

First to fourth IGBTs in which switching operations are performed for power conversion, first and second gate drive units for driving the first to fourth IGBTs, and first to fourth IGBTs for turning- And a snubber capacitor for stable turn-off operation,
The first IGBT and the second IGBT, and the third IGBT and the fourth IGBT are configured in parallel,
And a cooler is connected to the first and second IGBTs and the third and fourth IGBTs in parallel through first and second heat pipes, respectively. . The method according to claim 1,
The first and second IGBTs and the third and fourth IGBTs, which are configured in parallel, are arranged in a symmetrical manner,
The first and second heat pipes are symmetrically connected to the first and second IGBTs and the third and fourth IGBTs symmetrically from the cooler for cooling the first and second IGBTs and the third and fourth IGBTs. And the power stack of the propulsion control device for a high-speed train using the modular IGBT. The power stack of a propulsion control apparatus for a high-speed railway vehicle according to claim 2, wherein the first to fourth IGBTs are modular IGBTs each including a power semiconductor device and a diode. The propulsion control apparatus for a high-speed train according to claim 3, wherein the propulsion control apparatus for a high-speed train includes a plurality of converters as a power circuit, and each of the plurality of converters comprises a modular IGBT. The power stack of the device. 4. The propulsion control apparatus for a high-speed train according to claim 3, wherein the propulsion control apparatus for a high-speed train includes a plurality of converters as a power circuit, one of the converters is composed of a modular IGBT, And the power stack of the propulsion control device for a high-speed train using the modular IGBT.

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