KR20170126129A - Method of managing probe card - Google Patents

Abstract

The present invention relates to a method for managing a probe card including a base substrate and a plurality of probes extending downwards from the bottom surface of the base substrate to inspect electrical characteristics. In the method for managing a probe card, first, any one of the probes is selected as a reference probe. Subsequently, the height of the bottom surface of the base substrate is measured, and the height of the end of the reference probe is measured. A wear amount of the reference probe is calculated on the basis of the value determined from the difference between the measured height of the bottom surface of the base substrate and the measured height of the end of the reference probe. Subsequently, a replacement time of the probe card is determined in accordance with the wear amount of the reference probe. As described above, according to the method for managing a probe card, the height of the bottom surface of the base substrate and the height of the end of the reference probe are measured, the value of the difference between them is calculated, thereby accurately and easily determining the wear degree of probes.

Description

[0001] METHOD OF MANAGING PROBE CARDS [0002]

Embodiments of the present invention relate to a probe card management method. And more particularly, to a method of managing a probe card by grasping the degree of wear of probes provided on the probe card.

Generally, semiconductor devices, such as integrated circuit devices, can be formed by repeatedly performing a series of semiconductor processes on a substrate, such as a semiconductor wafer. For example, a deposition process for forming a thin film on a wafer, an etching process for forming the thin film into patterns having electrical characteristics, an ion implantation process or diffusion process for implanting or diffusing impurities into the patterns, Semiconductor circuits, i.e., dies, can be formed on the substrate by repeatedly performing cleaning and rinsing processes to remove impurities from the substrate.

An inspection process for inspecting the electrical characteristics of the dies after forming the dies through such a series of processes can be performed. The inspection process may be performed by a probe station including a probe card having a plurality of probes and a tester connected to the probe card to provide an electrical signal.

A probe card may be mounted on the upper part of the inspection chamber, and a stage supporting the wafer may be disposed below the probe card. The stage may be configured to be movable vertically and horizontally so that the dies contact the probes of the probe card. The inspection process first applies the probes output from the tester to the wafer through the probes after contacting the probes of the probe card with the wafer.

As such, since the probes of the probe card are in contact with the wafer to apply the inspection signal, they can be abraded by friction with the wafer. If the abrasion of the probe is severe, it can not be used in the inspection process, and the probe card must be replaced. Therefore, it is necessary to manage the degree of wear of the probes in order to determine whether the probe card is replaced or not.

As a method of determining the degree of wear of the probes, there is a method in which probes are brought into contact with the pad to use a probe mark on the pad. However, since the probe mark is very fine, there is a problem that it is difficult to determine whether the probe card is replaced using the probe mark image.

Korean Patent Publication No. 10-2007-0075589 (2007.07.24.)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a probe card management method capable of accurately and easily grasping the degree of wear of probes of a probe card in a probe station.

According to an aspect of the present invention, there is provided a method of managing a probe card including a base substrate and a plurality of probes extending downward from a lower surface of the base substrate to inspect electrical characteristics, Selecting at least one of the probes as a reference probe, measuring a height of a lower surface of the base substrate, measuring a height of an end of the reference probe, measuring a height of a lower surface of the base substrate, Calculating a wear amount of the reference probe based on a difference between heights of the reference probes, and determining a replacement timing of the probe card according to an amount of wear of the reference probe.

According to embodiments of the present invention, measuring the height of the lower surface of the base substrate may include measuring a focal distance of the lower vision disposed below the probe card to the lower surface of the base substrate, And setting a focal distance to a lower surface of the base substrate to a height of a lower surface of the base substrate. The step of measuring the height of the end portion of the reference probe may include the steps of measuring the focal distance to the end portion of the reference probe by the lower vision and measuring the focal distance to the end portion of the reference probe, And setting the height to the end height.

According to embodiments of the present invention, the probe card management method may further include, before the step of selecting the reference probe, at least one point on the lower surface of the base substrate is used for measuring the height of the lower surface of the base substrate And setting the measurement point as a measurement point. Also, in the step of selecting the reference probe, the reference probe may be selected from among the probes positioned adjacent to the measurement point. In addition, in the step of measuring the focal distance to the lower surface of the base substrate, the lower vision may horizontally move toward the measurement point side to measure the focal distance to the measurement point. In addition, in the step of measuring the focal distance to the end of the reference probe, the lower electric potential may horizontally move to the reference probe side to measure the focal distance to the end of the reference probe.

According to embodiments of the present invention, the measurement point and the reference probe may be set to plural. Further, in the step of selecting the reference probe, the reference probes may be selected corresponding to the measurement points.

According to embodiments of the present invention, the lower vision may include measuring the height of the lower surface of the base substrate by setting groups of measurement points and reference probes corresponding to each other in a group, Can be continuously performed.

According to embodiments of the present invention, measuring the height of the bottom surface of the base substrate is performed for each of the measurement points, wherein measuring the height of the end of the reference probe comprises: . ≪ / RTI >

According to embodiments of the present invention, the step of calculating the amount of wear of the reference probe may be based on the height of the end portion of the reference probe and the height difference between the lower surface of the base substrate measured at the measurement point corresponding to the reference probe Can be calculated.

According to embodiments of the present invention, the measurement points may be set in a peripheral region surrounding the metering region where the probes are located in the base substrate. The reference probes may be selected from probes positioned at the outermost portion of the inspection region, and may be located opposite to each other in the diagonal direction by a pair of the same distance from the center point of the base substrate.

According to the embodiments of the present invention, the height of the lower surface of the base substrate and the height of the end portion of the reference probe are measured and the difference between them is calculated. Thus, It can be easily grasped. In particular, since the height of the lower surface of the base substrate and the height of the end portion of the reference probe can be measured easily and quickly by measuring the focal distance by the lower vision, it is possible to easily measure the wear amount The inspection time can be shortened and the probe card can be efficiently managed.

Further, since the probe card management method does not include a probe for a monitor and uses any one of the probes of the probe card adjacent to the measurement point, there is no need to consume the probe time to determine the position of the probe for monitoring.

1 is a schematic configuration diagram for explaining a probe station.
FIG. 2 is a schematic plan view for explaining the probe card shown in FIG. 1. FIG.
3 is a flowchart illustrating a probe card management method according to an embodiment of the present invention.
FIG. 4 is a flow chart for explaining a step of measuring the height of the lower surface of the base substrate shown in FIG.
5 is a schematic diagram for explaining the process of measuring the height of the base substrate and the reference probe with the lower vision.
6 is a flowchart for explaining the step of measuring the height of the end portion of the reference probe shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention should not be construed as limited to the embodiments described below, but may be embodied in various other forms. The following examples are provided so that those skilled in the art can fully understand the scope of the present invention, rather than being provided so as to enable the present invention to be fully completed.

In the embodiments of the present invention, when one element is described as being placed on or connected to another element, the element may be disposed or connected directly to the other element, . Alternatively, if one element is described as being placed directly on another element or connected, there can be no other element between them. The terms first, second, third, etc. may be used to describe various items such as various elements, compositions, regions, layers and / or portions, but the items are not limited by these terms .

The terminology used in the embodiments of the present invention is used for the purpose of describing specific embodiments only, and is not intended to be limiting of the present invention. Furthermore, all terms including technical and scientific terms have the same meaning as will be understood by those skilled in the art having ordinary skill in the art, unless otherwise specified. These terms, such as those defined in conventional dictionaries, shall be construed to have meanings consistent with their meanings in the context of the related art and the description of the present invention, and are to be interpreted as being ideally or externally grossly intuitive It will not be interpreted.

Embodiments of the present invention are described with reference to schematic illustrations of ideal embodiments of the present invention. Thus, changes from the shapes of the illustrations, e.g., changes in manufacturing methods and / or tolerances, are those that can be reasonably expected. Accordingly, the embodiments of the present invention should not be construed as being limited to the specific shapes of the regions described in the drawings, but include deviations in the shapes, and the elements described in the drawings are entirely schematic and their shapes Is not intended to describe the exact shape of the elements and is not intended to limit the scope of the invention.

FIG. 1 is a schematic structural view for explaining a probe station, and FIG. 2 is a schematic plan view for explaining a probe card shown in FIG.

Referring to FIGS. 1 and 2, the probe station 100 performs an electrical characteristic inspection using the probe card 20 with respect to the wafer 10 on which semiconductor elements are formed. The probe station 100 includes a test chamber 110, a chuck 120 and a vertical driver 130, a chuck stage 140, a horizontal driver 150, a lower vision 160, a top vision 170, And may include a control unit 180.

Specifically, the inspection chamber 110 provides a process space for performing an electrical inspection on the wafer 10, and the probe card 20 and the chuck 120 are disposed in the inspection chamber 110 .

2, the probe card 20 may include a base substrate 22 and a plurality of probes 24 provided on a lower surface of the base substrate 22.

Like the wafer 10, the base substrate 22 may have a disk shape and may be divided into the inspection area DA and the surrounding area SA surrounding the inspection area DA.

The probes 24 are located in the inspection area DA and extend downward from the lower surface of the base substrate 22. The probes 24 may be contacted to the wafer 10 to apply an inspection signal to the wafer 10 to inspect the electrical characteristics of the wafer 10. Here, the probe station 100 may be connected to a tester 30 for checking the electrical characteristics of the wafer 10. The tester 30 applies the inspection signal to the semiconductor elements formed on the wafer 10 through the probe card 20 and outputs electrical signals to the wafer 10 through the signals output from the semiconductor elements. You can check the properties.

The chuck 120 may be disposed under the probe card 20. The chuck 120 has a generally columnar shape and can support the wafer 10 and be rotatable.

The vertical driving unit 130 may be disposed below the chuck 120 and the vertical driving unit 130 may be disposed on the upper surface of the chuck stage 140. The chuck stage 140 may be disposed on the horizontal driving unit 180. Here, the arrangement relationship between the vertical driving unit 160 and the horizontal driving unit 180 may be variously changed, so that the scope of the present invention is not limited thereto.

The chuck 120 may be vertically moved by the vertical driving unit 130 and horizontally moved by the horizontal driving unit 150. The vertical driving unit 130 and the horizontal driving unit 150 may align the probe card 20 and the wafer 10 by adjusting vertical and horizontal positions of the chuck 120.

The lower vision 160 may be disposed at one side of the chuck 120 and the upper vision 170 may be disposed at a side of the probe card 20.

The lower vision 160 may obtain an image of the probes 24 of the probe card 20. Although not shown in detail in the drawing, the upper vision 160 can be moved horizontally by a driving unit having a bridge shape. The upper vision 170 may be disposed above the chuck 120 to obtain an image of the patterns on the wafer 10.

The lower vision 160 and the upper vision 170 may provide the acquired image to the controller 180. [ The controller 180 may use images provided from the lower and upper vision 160 and 170 to align the wafer 10 and the probe card 20. In particular, the controller 180 may manage the probe card 20 using the lower vision 160. That is, the controller 180 can determine the degree of wear of the probes 24 of the probe card 20 by using the lower vision 160 and determine the replacement timing of the probe card 20.

Hereinafter, a method of managing the probe card in the probe station 100 will be described in detail with reference to the drawings.

3 is a flowchart illustrating a probe card management method according to an embodiment of the present invention.

1 to 3, the probe card management method according to an embodiment of the present invention includes a step of measuring a height of a lower surface of the base substrate 22, At least one of the points is set as the measurement points DP1, DP2, DP3, and DP4 (step S110). Here, the measurement points DP1, DP2, DP3, and DP4 may be set in the peripheral area SA of the base substrate 22.

Next, the controller 180 selects at least one of the probes 24 of the probe card 20 as reference probes 24A, 24B, 24C, and 24D for measuring the height of the end portion (step S120) . Here, the reference probes 24A, 24B, 24C, and 24D may be selected from the outermost probes among the probes 24.

In one embodiment of the present invention, the measurement points DP1, DP2, DP3, and DP4 and the reference probes 24A, 24B, 24C, and 24D can be set to a plurality of reference probes 24A and 24B , 24C, and 24D may be set in a one-to-one correspondence with the measurement points DP1, DP2, DP3, and DP4.

In one example of the present invention, the measurement points DP1, DP2, DP3, and DP4 and the reference probes 24A, 24B, 24C, and 24D may be set to four, respectively. For convenience of explanation, the four measurement points DP1, DP2, DP3 and DP4 are referred to as first to fourth measurement points DP1, DP2, DP3 and DP4, and four reference probes 24A 24B, 24C and 24D are referred to as first to fourth reference probes 24A, 24B, 24C and 24D.

As shown in FIG. 2, the first to fourth reference probes 24A, 24B, 24C and 24D are arranged such that the distances of the center points of the base substrate 22 are equal to each other, Can be located opposite. Further, each of the reference probes 24A, 24B, 24C, 24D may be located adjacent to a corresponding measurement point. For example, the first reference probe 24A may be located adjacent to the first reference probe 24A and the corresponding first measurement point DP1.

When the reference probes 24A, 24B, 24C, and 24D and the measurement points DP1, DP2, DP3 and DP4 are set, the lower vision 160 heightens the height of the lower surface of the base substrate 22 (Step S130).

Next, the height of at least one of the reference probes 24A, 24B, 24C, and 24D is measured (step S140).

The step of measuring the height of the lower surface of the base substrate 22 and the step of measuring the height of the end portions of the reference probes 24A, 24B, 24C and 24D (S140) This will be described in detail.

FIG. 4 is a flow chart for explaining the step of measuring the height of the lower surface of the base substrate shown in FIG. 3, FIG. 5 is a schematic view for explaining a process of measuring the height of the base substrate and the reference probe, .

The height of the lower surface 22A of the base substrate 22 may be measured by measuring the height of the bottom surface 160 of the base substrate 22 And the focal length SH to the lower surface 22A is measured (step S132). Specifically, the lower vision 160 horizontally moves toward one of the first to fourth measurement points DP1, DP2, DP3 and DP4, for example, toward the first measurement point DP1, 1 Measure the focal length (SH) to the measurement point (DP1). At this time, the lower vision 160 can measure a focal length (SH) from the lower surface 22A of the base substrate 22 through an auto focusing function.

The control unit 180 controls the focal length SH to the first measurement point DP1 measured by the lower vision 160 to the first measurement point DP1 corresponding to the first measurement point DP1, Is set to the height SH of the lower surface 22A of the base substrate 22 (step S134).

6 is a flowchart for explaining the step of measuring the height of the end portion of the reference probe shown in FIG.

2, 5, and 6, the process 140 of measuring the height of the end portions of the reference probes 24A, 24B, 24C, and 24D may be performed by first measuring the height of the lower vision 160, The focal length PH to the end of one of the four reference probes 24A, 24B, 24C, and 24D is measured (step S142). Specifically, the lower vision 160 horizontally moves to one of the first to fourth reference probes 24A, 24B, 24C, and 24D, for example, toward the first reference probe 24A, 1 < / RTI > to the end of the reference probe 24A is measured.

The controller 180 controls the focal distance PH to the end of the first reference probe 24A measured by the lower power supply 160 to the end of the first reference probe 24A (Step S144).

Referring to FIGS. 1 to 3 and 5, after step S140, the controller 180 determines whether the height SH of the lower surface 22A of the base substrate 22 measured in step S130 and the height The wear amount of the reference probes 24A, 24B, 24C, and 24D is calculated based on the height PH of the end portion of the measured reference probe (Step S150). The amount of wear of the reference probes 24A, 24B, 24C and 24D is determined by the height PH of the ends of the reference probes 24A, 24B, 24C and 24D and the height PH of the reference probes 24A, 24B, 24C and 24D. (SH) difference of the lower surface 22A of the base substrate 22 measured at the corresponding measurement point. For example, the wear amount of the first reference probe 24A is determined by the height SH of the lower surface 22A of the base substrate 22 measured at the first measurement point DP1, (PH) difference between the end portions of the end portions

Next, the control unit 180 determines the replacement timing of the probe card 22 based on the calculated wear amount (step S160). That is, the controller 180 may determine to replace the probe card 22 when the wear amount exceeds a predetermined threshold wear amount.

In one embodiment of the present invention, the probe card management method may calculate the amount of wear for each of the first to fourth reference probes 24A, 24B, 24C, and 24D, Only the wear amount of the selected reference probe may be calculated.

DP2, DP3, DP4, DP2, DP3, DP3, DP4, DP2, DP3, DP4, DP4, DP2, DP3 and DP4, respectively, when calculating the abrasion amount for each of the first to fourth reference probes 24A, DP4 of the base substrate 22 to the lower surface 22A of the base substrate 22 and measuring the focal length SH of each of the first to fourth reference probes 24A, 24B, 24C, 24D, (PH) is measured. The lower vision unit 160 may measure the focal length SH of the lower surface 22A of the base substrate 22 by setting the corresponding measurement points and the reference probes into one group And measuring the focal length PH of the reference probes 24A, 24B, 24C, and 24D (S142).

On the other hand, when any one of the first to fourth reference probes 24A, 24B, 24C, and 24D is selected to calculate only the amount of wear of the selected reference probe, the lower vision 160 may include the first to fourth measurements The focus distance SH to the lower surface 22A of the base substrate 22 is selected by selecting only one of the points DP1, DP2, DP3 and DP4, Measure the distance (PH).

As described above, the probe card management method according to the embodiment of the present invention is characterized in that the focal distance SH of the base substrate 22 measured by the lower vision 160 and the fiducial distance SH of the reference probes 24A, 24B, 24C, The degree of wear of the probes 24 can be easily grasped by using the focal length PH of the photodiodes 24D. Therefore, since the probe station 100 does not need to have a separate monitor probe for grasping the degree of wear of the probes 24, there is no need to consume the inspection time to locate the probe for monitoring , The inspection time can be shortened compared with the conventional method of grasping the degree of wear using an image.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the following claims. It will be understood.

100: probe station 110: inspection chamber
120: chuck 130: vertical driving part
140: Chuck stage 150: Horizontal driving part
160: Lower vision 170: Upper vision
180:

Claims (8)

1. A method of managing a probe card having a base substrate and a plurality of probes extending downward from a lower surface of the base substrate to inspect electrical characteristics,
Selecting at least one of the probes as a reference probe;
Measuring a height of a lower surface of the base substrate;
Measuring a height of an end of the reference probe;
Calculating a wear amount of the reference probe based on a difference between a height of a lower surface of the base substrate and a height of an end of the reference probe; And
And determining a replacement timing of the probe card according to a wear amount of the reference probe. The method according to claim 1,
Wherein the step of measuring the height of the lower surface of the base substrate comprises:
Measuring a focal distance of the lower vision disposed below the probe card to a lower surface of the base substrate; And
And setting a focal distance of the measured lower surface of the base substrate to a height of a lower surface of the base substrate,
Wherein measuring the height of the end of the reference probe comprises:
Measuring a focal distance of the lower vision to an end of the reference probe; And
And setting the focal distance to the end of the reference probe as the measured tip height of the reference probe. 3. The method of claim 2,
Further comprising the step of setting at least one point on the lower surface of the base substrate to a measurement point for measuring the height of the lower surface of the base substrate before the step of selecting the reference probe,
Wherein, in the step of selecting the reference probe, the reference probe is selected from any one of the probes positioned adjacent to the measurement point,
Wherein the lower vision measures the focal distance to the measurement point by horizontally moving to the measurement point side in measuring the focal distance to the lower surface of the base substrate,
Wherein the step of measuring the focal distance to the end of the reference probe horizontally moves to the reference probe side to measure the focal distance to the end of the reference probe. The method of claim 3,
Wherein the measurement point and the reference probe are set to a plurality,
Wherein in the step of selecting the reference probe, the reference probes are selected corresponding to the measurement points. 5. The method of claim 4,
Wherein the lower vision measures the height of the lower surface of the base substrate and the height of the end portion of the reference probe by setting groups of measurement points and reference probes corresponding to each other in groups, Wherein the probe card is a probe card. 5. The method of claim 4,
Wherein measuring the height of the bottom surface of the base substrate is performed for each of the measurement points,
Wherein measuring the height of the end portion of the reference probe is performed for each of the reference probes. 5. The method of claim 4,
Wherein the step of calculating the amount of abrasion of the reference probe is based on a height difference between the height of the end portion of the reference probe and the height difference between the lower surface of the base substrate measured at the measurement point corresponding to the reference probe. How to manage. 5. The method of claim 4,
Wherein the measurement points are set in a peripheral region surrounding a metering region in which the probes are located in the base substrate,
Wherein the reference probes are selected from probes located at the outermost portion of the probe region and are located at a distance from a center point of the base substrate and are opposed to each other in a diagonal direction.

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