KR20170104053A - The base film for use of semiconductor process and the manufacturing method for the same - Google Patents
The base film for use of semiconductor process and the manufacturing method for the same Download PDFInfo
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- KR20170104053A KR20170104053A KR1020160025895A KR20160025895A KR20170104053A KR 20170104053 A KR20170104053 A KR 20170104053A KR 1020160025895 A KR1020160025895 A KR 1020160025895A KR 20160025895 A KR20160025895 A KR 20160025895A KR 20170104053 A KR20170104053 A KR 20170104053A
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- base film
- substrate film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 79
- 229920005989 resin Polymers 0.000 claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 48
- 239000002904 solvent Substances 0.000 claims abstract description 31
- 238000000227 grinding Methods 0.000 claims abstract description 21
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- 239000000758 substrate Substances 0.000 claims description 28
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 21
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000012948 isocyanate Substances 0.000 claims description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 6
- 150000002513 isocyanates Chemical class 0.000 claims description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 6
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- 229920005749 polyurethane resin Polymers 0.000 claims description 3
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- 229920000609 methyl cellulose Polymers 0.000 claims description 2
- 239000001923 methylcellulose Substances 0.000 claims description 2
- 235000010981 methylcellulose Nutrition 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 235000010944 ethyl methyl cellulose Nutrition 0.000 claims 1
- 229920003087 methylethyl cellulose Polymers 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 50
- 230000035882 stress Effects 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 238000001723 curing Methods 0.000 description 12
- 230000000704 physical effect Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 5
- 239000002313 adhesive film Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 229920006310 Asahi-Kasei Polymers 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001228 polyisocyanate Polymers 0.000 description 2
- 239000005056 polyisocyanate Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- GWESVXSMPKAFAS-UHFFFAOYSA-N Isopropylcyclohexane Natural products CC(C)C1CCCCC1 GWESVXSMPKAFAS-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C09J7/0203—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Polyurethanes Or Polyureas (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
The present invention relates to a base film used in a semiconductor process and a method for producing the base film, and a base film having physical properties suitable for use in semiconductor air such as a back grinding process or a dicing process, How to do it.
A protective film in a semiconductor wafer processing step such as a dicing step or a back grinding step is a multilayered laminate product including a base film and an adhesive layer and is used for temporarily protecting the wafer during the semiconductor processing.
A plastic film such as polyethylene terephthalate (PET), polyolefin, polyurethane, ethylene-vinyl acetate, polybutylene terephthalate, polypropylene, or polyethylene is mainly used as the base film included in the adhesive film or the pressure- do. Such a plastic film can be produced by melting various thermoplastic resins and applying the melted resin to a T-shaped die, a sucking extrusion or a calender rendering method. As described above, the film produced by the extrusion or knife rendering method is advantageous in productivity and low in cost.
However, in the above manufacturing method, there is a possibility that a film called a fish eye is scattered due to the introduction of an undesirable foreign substance into the resin during the film forming process or due to the presence of an insoluble component in the resin. Is high. In addition, in the case of a film produced in the above-described manner, it is difficult to uniformly control the thickness of the film, and there is a problem that a large difference in physical properties occurs in the longitudinal and transverse directions of the film due to stress applied during the manufacturing process.
Accordingly, in the case of a film produced by a conventional method, for example, when applied to a dicing process or a back-grinding process, cracks or warpage may easily occur on the wafer due to uneven pressure and may be applied to other applications , It causes various problems.
It is also required to precisely control the process so as to prevent cracks or deformation of wafers during the semiconductor process in accordance with the recent trend of increasing the size of the semiconductor wafer and decreasing the thickness of the semiconductor wafer. Lt; / RTI >
One embodiment of the present invention can prevent damage to wafers when used in a semiconductor process, for example, when cracks or warps occur in the wafer even though the thickness of the wafer is grinded as thin as possible during the back grinding process of the wafer And a base film for a semiconductor process which can effectively prevent the above-mentioned problems.
Another embodiment of the present invention provides a method for manufacturing a base film for semiconductor processing, which facilitates the production of a base film having physical properties suitable for use in a semiconductor process such as a back grinding process.
In one embodiment of the present invention, a thermosetting composition comprising a thermosetting resin and a solvent having a weight average molecular weight of 30,000 to 150,000, and including a total thickness deviation (TTV, Total Thickness Variation is less than 5 탆.
In another embodiment of the present invention, there is provided a method of making a composition comprising a thermosetting resin having a weight average molecular weight of 30,000 to 150,000 and a solvent; Applying and thermally curing the composition to form a substrate film comprising a thermoset; And aging the base film. The present invention also provides a method for producing a base film for semiconductor processing.
The substrate film for semiconductor processing can be used as a base film of a protective film attached to a circuit surface of a wafer during a semiconductor process, for example, a back grinding process of a wafer. It is possible to effectively prevent occurrence of cracks or warpage of the wafer while realizing excellent workability in the process of grinding very thinly.
The method for producing a base film for semiconductor processing can produce the base film for semiconductor processing exhibiting excellent physical properties when used in a semiconductor process. Specifically, the surface properties of the base film for semiconductor processing can be improved through the above- It is possible to realize excellent workability and wafer protection performance.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art to which the invention pertains. Only.
In one embodiment of the present invention, a thermosetting composition of a composition comprising a thermosetting resin and a solvent having a weight average molecular weight (Mw) of 30,000 to 150,000 and including a total thickness deviation (TTV , Total Thickness Variation) of less than 5 mu m.
Generally, the protective film used in the semiconductor processing may have a laminated structure of a base film and an adhesive film. An example of a semiconductor process in which such a protective film is used is a back grinding or dicing process, which is a polishing process of a wafer. Precisely controlling the physical properties of the wafer during this process is one of the important elements of the process. It is one. For example, a back grinding process of a wafer is a process of polishing a back surface of a wafer having a highly integrated circuit formed on one surface thereof. In order to prevent the wafer from being contaminated or cracked during the polishing process, And then the back surface is polished. More specifically, the side of the adhesive film of the protective film can be adhered to the surface of the wafer.
When the protective film is attached to the wafer, the base film of the protective film is exposed to the outside, and when the back surface of the surface to which the protective film is adhered is abraded, the wafer abuts on the surface on which the wafer is placed. Therefore, the physical properties of the base film can directly or indirectly affect the physical properties of the wafer during the polishing process.
The substrate film for semiconductor processing according to an embodiment of the present invention can be used as a base film of such a protective film. The base film exhibits a uniform thickness, exhibits stress relaxation properties and excellent cutability, and it is possible to polish the wafer to a uniform thickness despite the fact that the wafer is polished to a thin thickness. Further, cracks and contamination of the wafers can be prevented from occurring.
Specifically, the substrate film for semiconductor processing may include a thermosetting composition of a composition comprising a thermosetting resin having a weight average molecular weight of 30,000 to 150,000 and a solvent.
The base film for semiconductor processing may be mass-produced in a photo-curing type such as ultraviolet rays, but it can be advantageously improved in thickness uniformity by being manufactured to include thermosetting of the composition using a thermal curing method.
The weight average molecular weight of the thermosetting resin in the composition may be, for example, from about 30,000 to about 15, in particular from about 30,000 to about 7, and more specifically from about 40,000 to about 6 have.
When a thermosetting resin having a weight average molecular weight in the above range is used as the above-mentioned composition, an appropriate viscosity can be secured and excellent coating properties can be exhibited in the process of forming a base film. Further, the base film can be produced to have a uniform thickness through a thermosetting resin having a weight average molecular weight in the above range, exhibits excellent stress relaxation property and cutting property, and can provide excellent strength and rigidity required during semiconductor processing Can be implemented.
For example, the thermosetting resin may include a polyurethane resin or an epoxy resin. In one embodiment, the thermosetting resin may include a polyurethane resin, and in this case, it may be more advantageous in terms of stress relaxation property and thickness deviation.
Specifically, the thermosetting resin may be an oligomer having a weight average molecular weight within the above-mentioned range, and a thermosetting functional group may be contained at the terminal of the thermosetting resin. For example, the thermosetting functional group may be an isocyanate group or a hydroxyl group.
The solvent can serve to evenly distribute the composition to a uniform thickness, whereby the base film formed using the composition can have a uniform thickness. For example, the solvent may include one selected from the group consisting of methyl ethyl ketone, cyclohexane, ethyl acetate, butyl acetate, toluene, xylene, propylene glycol monomethyl ether acetate, methyl cellulose, ethyl cellulose, have.
In one embodiment, the solvent may comprise methyl ethyl ketone, cyclohexane, or ethyl acetate, which in turn has a lower breaking point than other solvents, thereby controlling the drying temperature during coating to deteriorate the physical properties and effects of the thermosetting resin It can be more advantageous in terms of not being.
The composition may include about 20 to about 70 parts by weight of the solvent relative to 100 parts by weight of the thermosetting resin. By including the solvent in the above range in the composition as compared with the thermosetting resin, an appropriate viscosity can be ensured and the processability and coating property can be improved. In addition, the base film produced through the composition containing the solvent in the above-described range can have a uniform thickness and can exhibit excellent surface physical properties without projecting portions.
The composition may further comprise a thermosetting agent together with the thermosetting resin and the solvent.
When the thermosetting resin has an isocyanate group or a hydroxyl group at the terminal, the thermosetting agent may be an isocyanate-based curing agent. For example, the thermosetting agent may be a polyisocyanate-based curing agent. Specifically, the polyisocyanate curing agent may include a trifunctional isocyanate compound, and in this case, it may be more advantageous in view of weatherability.
When the composition further comprises a thermosetting agent together with the thermosetting resin and the solvent, the thermosetting agent may be included in an amount of about 1 to about 10 parts by weight based on 100 parts by weight of the thermosetting resin. When the content of the thermosetting agent satisfies the above range, the composition can ensure an appropriate viscosity, and the base film containing the thermosetting composition of the composition can exhibit excellent surface properties and strength.
The composition for producing the base film can control the uniform thickness and the viscosity for realizing the stress relaxation property and the cuttability through the thermosetting resin and the solvent. For example, the viscosity of the composition may be from about 500 cP to about 4000 cP at 25 캜, specifically from about 1000 cP to about 3000 cP, and more specifically from about 1500 cP to about 2500 cP.
It is possible to ensure an excellent coating property in the process of manufacturing the base film through the viscosity of the above-mentioned composition, and at the same time, the base film formed with the composition realizes strength and rigidity suitable for use in semiconductor processing, And stress relaxation properties.
The base film for semiconductor processing includes a thermosetting composition of the composition. The thermosetting composition may be formed by applying the composition in a film form considering the thickness of the base film and thermally curing the composition at a high temperature.
The base film for semiconductor processing has a high degree of uniformity in thickness and can effectively prevent cracking and contamination of the wafer when the wafer is subjected to a back grinding process or a dicing process of the wafer and the wafer is polished to a thin thickness It can be used advantageously.
Specifically, the substrate film for semiconductor processing may have a total thickness variation (TTV) defined by a difference between a maximum thickness and a minimum thickness of less than about 5 탆. For example, the total thickness deviation of the base film can be about 4 탆 or less, more specifically about 3 탆 or less, and more specifically about 2 탆 or less.
The surface roughness of the base film can be minimized by the total thickness deviation in the above range and cracking and contamination of the wafer can be effectively prevented when the wafer is polished to a very thin thickness by the back grinding process of the wafer.
In addition, the base film is produced using a thermosetting resin having a weight average molecular weight in the above-mentioned range, and can be improved in the stress relaxation property and the cutability by being manufactured with the total thickness deviation within the above range.
The base film for semiconductor processing can be used for a back grinding process of wafers as described above. Back grinding of a wafer is a step of forming a circuit on one surface of a wafer and then grinding the back surface of the wafer. At this time, the substrate film for semiconductor processing may be manufactured in the form of an adhesive film and a laminated protective film, and the side surface of the wafer on which circuits are formed may be adhered to the adhesive film. If the base film is used in the backgrinding process of a semiconductor wafer, the wafer to be ground can be ground to a very thin thickness without damaging cracks and contamination, and the semiconductor wafer can be ground with a large diameter, Can respond.
For example, in the backgrinding process of the semiconductor wafer, the semiconductor wafer can be ground to a thickness of about 50 mu m or less, and specifically, to a thickness of about 40 mu m or less. In addition, the wafer is thinly ground to have a thickness in the above range using the base film, and at the same time, there is no damage such as cracking and contamination.
In another embodiment of the present invention, there is provided a method of making a composition comprising a thermosetting resin having a weight average molecular weight of 30,000 to 150,000 and a solvent; Applying and thermally curing the composition to form a substrate film comprising a thermoset; And aging the base film. The present invention also provides a method for producing a base film for semiconductor processing.
A base film suitable for use in the back-grinding or dicing process of a semiconductor wafer can be produced through the above-described method for producing a base film.
The base film produced through the method of manufacturing the base film may have a total thickness variation (TTV) defined as a difference between a maximum thickness and a minimum thickness of less than 5 mu m, for example, about 4 mu m or less , For example, about 3 탆 or less, for example, about 2 탆 or less.
In addition, the base film produced by the method for producing the base film can exhibit excellent stress relaxation property and cutability, and can exhibit excellent strength and rigidity during semiconductor processing.
The method for producing the base film may include a step of preparing a composition including a thermosetting resin having a weight average molecular weight of 30,000 to 150,000 and a solvent.
The weight average molecular weight of the thermosetting resin can be, for example, about 30,000 to about 15, specifically about 30,000 to about 7, and more specifically about 40,000 to about 6. The composition can be prepared to include a thermosetting resin having a weight average molecular weight in the above range to ensure an appropriate viscosity, and the composition can be evenly mixed and exhibit excellent coating properties in a subsequent application process. As a result, the uniformity of the thickness of the base film produced by the above-described manufacturing method can be improved.
The composition may include about 20 to about 70 parts by weight of the solvent relative to 100 parts by weight of the thermosetting resin. By including the solvent in the above range in the composition as compared with the thermosetting resin, an appropriate viscosity can be ensured and the processability and coating property can be improved.
The composition may further comprise a thermosetting agent. When the composition further comprises a thermosetting agent together with the thermosetting resin and the solvent, the thermosetting agent may be included in an amount of about 0.1 to about 10 parts by weight based on 100 parts by weight of the thermosetting resin. When the content of the thermosetting agent satisfies the above range, the composition can have an appropriate viscosity, and the processability and coating property of the composition can be improved.
In the step of preparing the composition, the thermosetting resin and the solvent of the composition may be put in a mixer-equipped container and mixed for about 20 minutes to about 30 minutes. By mixing the thermosetting resin and the solvent in the above-described manner, the composition can be evenly mixed and a proper viscosity can be secured.
The viscosity of the composition may be from about 500 cP to about 4000 cP at 25 캜, specifically from about 1000 cP to about 3000 cP, and more specifically from about 1500 cP to about 2500 cP.
The method for producing the base film may include a step of applying the composition and thermally curing the base film to form a base film including a thermosetting resin. For example, the composition may be blended, followed by filtering to remove impurities, applied through a comma roll, dried and cured as the solvent passes through the oven to produce a uniform thickness Base film.
For example, the temperature of the oven may be from about 70 ° C to about 120 ° C. By thermosetting the composition in the above-mentioned temperature range, the composition can be thermally cured so as to have an appropriate degree of curing, and as a result, the base film can exhibit excellent strength and rigidity, and stress relaxation property and cuttability can be improved .
The method for producing the base film may include aging the base film. The step of aging the base film may be further performed after the composition is thermally cured to prepare a base film containing the thermoset.
Specifically, the substrate film can be aged at about 40 캜 to about 60 캜 for about 1 day to about 3 days. The base film can be further aged to improve the uniformity of the thickness. Thus, it is possible to ensure excellent physical properties of the base film without protruding portions, and to ensure that the total thickness deviation is as uniform as possible Can be implemented.
Hereinafter, specific embodiments of the present invention will be described. However, the embodiments described below are only intended to illustrate or explain the present invention, and thus the present invention should not be limited thereto.
<
Example
And
Comparative Example
>
Example One
50 parts by weight and 10 parts by weight, respectively, of methyl ethyl ketone and propylene glycol monomethyl ether acetate as solvents were added to 100 parts by weight of a polyurethane thermosetting resin having a weight average molecular weight of 53,800 g / mol and an isocyanate group or a hydroxyl group at both terminals, The composition was prepared by mixing. To the composition, 5 parts by weight of a trifunctional isocyanate curing agent (ASAHI KASEI, TKA-100) as a thermosetting agent was further blended with 100 parts by weight of the thermosetting resin to prepare a composition having a viscosity of 1000 cP at 25 캜. The above composition was applied to a PET film (H33P-50, manufactured by KOLON) and thermally cured at a temperature of 100 캜 to prepare a base film. Subsequently, the substrate film was aged at 50 DEG C for 2 days to prepare a substrate film for semiconductor processing.
Example 2
60 parts by weight and 10 parts by weight, respectively, of methyl ethyl ketone and propylene glycol monomethyl ether acetate as solvents were added to 100 parts by weight of a polyurethane thermosetting resin having a weight average molecular weight of 107,600 g / mol and an isocyanate group or a hydroxyl group at both terminals, The composition was prepared by mixing. To the composition, 5 parts by weight of a trifunctional isocyanate curing agent (ASAHI KASEI, TKA-100) as a thermosetting agent was further blended with 100 parts by weight of the thermosetting resin to prepare a composition having a viscosity of 1000 cP at 25 캜. The above composition was applied to a PET film (H33P-50, manufactured by KOLON) and thermally cured at a temperature of 100 캜 to prepare a base film. Subsequently, the substrate film was aged at 50 DEG C for 2 days to prepare a substrate film for semiconductor processing.
Comparative Example One
30 parts by weight of methyl ethyl ketone and 10 parts by weight of propylene glycol monomethyl ether acetate as a solvent were added to 100 parts by weight of a polyurethane thermosetting resin having a weight average molecular weight of 15,900 g / mol and isocyanate groups or hydroxyl groups at both terminals, The composition was prepared by mixing. To the composition, 5 parts by weight of a trifunctional isocyanate curing agent (ASAHI KASEI, TKA-100) as a thermosetting agent was further blended with 100 parts by weight of the thermosetting resin to prepare a composition having a viscosity of 1000 cP at 25 캜. The above composition was applied to a PET film (H33P-50, manufactured by KOLON) and thermally cured at a temperature of 100 캜 to prepare a base film. Subsequently, the substrate film was aged at 50 DEG C for 2 days to prepare a substrate film for semiconductor processing.
Comparative Example 2
70 parts by weight and 10 parts by weight of methyl ethyl ketone and propylene glycol monomethyl ether acetate as solvents were added to 100 parts by weight of a polyurethane thermosetting resin having a weight average molecular weight of 208,300 g / mol and isocyanate groups or hydroxyl groups at both terminals, The composition was prepared by mixing. To the composition, 5 parts by weight of a trifunctional isocyanate curing agent (ASAHI KASEI, TKA-100) as a thermosetting agent was further blended with 100 parts by weight of the thermosetting resin to prepare a composition having a viscosity of 1000 cP at 25 캜. The above composition was applied to a PET film (H33P-50, manufactured by KOLON) and thermally cured at a temperature of 100 캜 to prepare a base film. Subsequently, the substrate film was aged at 50 DEG C for 2 days to prepare a substrate film for semiconductor processing.
Comparative Example 3
3 parts by weight of a photoinitiator (BASF, Irgacure 651) was further mixed with 100 parts by weight of a polyurethane-based photo-curable resin having a weight average molecular weight of 54,500 g / mol and acrylate groups at both terminals. The above composition was applied to a PET film (Kolon, H33P-50) and photo-cured using UV-A of 1000 mJ / cm 2 to produce a base film containing the photo-cured product.
<Evaluation>
Experimental Example 1: Total thickness deviation ( TTV , Total Thickness Variation )
With respect to the base films of Examples 1-2 and 1-3, the coating direction (MD) was defined as the direction in which the composition was applied during the production of the base film, and the perpendicular direction of the coating direction was defined as a vertical direction (TD). Then, the difference between the maximum thickness and the minimum thickness was measured for each of the coating direction (MD) and the vertical direction (TD), and a total thickness variation (TTV) was derived. The results are shown in Table 1 below.
Experimental Example 2: Stress Relieving Measure
The stress relaxation property means a degree of preventing a phenomenon of cracking or warpage of the wafer due to a force generated in the back grinding process. The base film of each of the examples and comparative examples is 15 mm x 100 mm x The specimens were manufactured with a size of 0.05 mm (width × width × thickness) and evaluated using a measuring instrument (Stable Micro Systems, texture analyzer). The initial measured force (A) The rate of change of the force (B) to be measured afterwards is derived by the following equation (1). The results are shown in Table 1 below.
[Formula 1]
Stress relaxation rate (%) = (AB) / A x 100
Referring to the results of Table 1, it can be seen that the base film of each of Examples 1 and 2 has a smaller total thickness deviation with respect to the coating direction (MD) and the vertical direction (TD) than the base film of Comparative Examples 1 to 3 Specifically, it was confirmed that both the coating direction (MD) and the perpendicular direction (TD) satisfy a range of less than 5 mu m. Thus, it can be seen that the base films of Examples 1 and 2 exhibit excellent thickness uniformity as compared with Comparative Examples 1 to 3 and are used in a semiconductor process such as a wafer back grinding process, positively affecting the physical properties of wafers there was.
In Example 1, the total thickness deviation in both the coating direction (MD) and the vertical direction (TD) is smaller than that in Example 2, and thus the Example 1 is superior to the Example 2 Thickness uniformity.
In addition, the base films of Examples 1 and 2 exhibit a higher stress relaxation rate than those of Comparative Examples 1 to 3, and can be used in a semiconductor process to effectively prevent warpage of wafers.
Claims (12)
A substrate film for semiconductor processing.
Wherein the composition comprises 20 to 70 parts by weight of the solvent relative to 100 parts by weight of the thermosetting resin
A substrate film for semiconductor processing.
Wherein the thermosetting resin comprises a polyurethane resin or an epoxy resin
A substrate film for semiconductor processing.
Wherein the solvent comprises one selected from the group consisting of methyl ethyl ketone, cyclohexane, ethyl acetate, butyl acetate, toluene, xylene, propylene glycol monomethyl ether acetate, methyl cellulose, ethyl cellulose and combinations thereof
A substrate film for semiconductor processing.
The composition further comprises a thermosetting agent
A substrate film for semiconductor processing.
Wherein the thermosetting agent comprises an isocyanate-based curing agent
A substrate film for semiconductor processing.
The viscosity of the composition ranges from 500 cP to about 4000 cP at < RTI ID = 0.0 > 25 C &
A substrate film for semiconductor processing.
A substrate film for a back grinding process of a semiconductor wafer
A substrate film for semiconductor processing.
The back grinding step of the semiconductor wafer is a step of grinding the semiconductor wafer to a thickness of 50 mu m or less
A substrate film for semiconductor processing.
Applying and thermally curing the composition to form a substrate film comprising a thermoset; And
And aging the substrate film.
A method of manufacturing a base film for semiconductor processing.
The thermoset material is formed by thermosetting the composition at 70 ° C to 120 ° C
A method of manufacturing a base film for semiconductor processing.
The step of aging the thermoset is carried out at 40 ° C to 60 ° C for 1 day to 3 days
A method of manufacturing a base film for semiconductor processing.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009126917A (en) * | 2007-11-21 | 2009-06-11 | Namics Corp | Method for manufacturing fiber reinforced uncured film and fiber reinforced uncured film |
| KR20120099358A (en) * | 2009-06-15 | 2012-09-10 | 주식회사 엘지화학 | Sheet used for processing wafer |
| KR20130099604A (en) * | 2012-02-29 | 2013-09-06 | 주식회사 케이씨씨 | Method for preparing a complex substrate film and backgrinding tape for semiconductor wafer comprising a complex substrate film prepared by the same |
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2016
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009126917A (en) * | 2007-11-21 | 2009-06-11 | Namics Corp | Method for manufacturing fiber reinforced uncured film and fiber reinforced uncured film |
| KR20120099358A (en) * | 2009-06-15 | 2012-09-10 | 주식회사 엘지화학 | Sheet used for processing wafer |
| KR20130099604A (en) * | 2012-02-29 | 2013-09-06 | 주식회사 케이씨씨 | Method for preparing a complex substrate film and backgrinding tape for semiconductor wafer comprising a complex substrate film prepared by the same |
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