KR20170093334A - Sputtering target, transparent conductive film using the same - Google Patents

Abstract

The present invention relates to a sputtering target, a sputtering device having the same, a transparent conductive film, a manufacturing method of the transparent conductive film, and use thereof. The present invention provides a conductive film and a manufacturing method thereof, wherein with a multiple composition sputtering target having a metal oxide compound, when surface resistance of a transparent conductive film is lowered to be applied to a large-scaled touch screen panel, a recognition speed is improved. Moreover, the conductive film has a rapid crystallization speed at a low temperature.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a sputtering target and a transparent conductive film using the sputtering target.

The present invention relates to a sputtering target, a sputtering apparatus including the sputtering target, a transparent conductive film including a conductive layer formed by using the sputtering apparatus, a method of manufacturing the transparent conductive film, and a use thereof.

A touch screen panel (TSP) is an input device of an operating system that allows a user to easily input data by simply touching the screen (screen) with a hand or an object. The touch screen panel (TSP) (Resistive), and capacitive (Capacitive).

Among them, Resistive and Capacitive are the most widely used methods. Resistive method is to detect when a potential difference occurs at a pressed point when touching with a finger or a pen. It is a principle and it is called a decompression type.

In addition, the electrostatic capacity type uses the electrostatic capacity in the human body to sense and change the direction of the current.

A transparent conductive film based on indium-tin oxide (ITO), which is common to the structures of the resistive film type and capacitive touch screen panel, is formed by depositing a conductive layer made of indium tin compound, which is a metal conductive material, So that a transparent electrode (electric circuit) through which a current flows is formed on the base substrate. Examples of the above-mentioned methods of sputtering include a sputtering method and an ion plating method. Recently, display devices and the like are in a trend of becoming larger, and a sputtering method can produce the transparent ITO-based transparent conductive film at the lowest cost.

On the other hand, when a conventional ITO-based transparent conductive film is applied to a large-area touch screen panel, the surface resistance increases and it becomes difficult to apply a uniform voltage.

In the prior art, there is a method of increasing the concentration of the doped metal oxide in the ITO thin film in order to realize a lower surface resistance. However, the doped metal oxide in the ITO thin film acts as a cause of increasing the crystallization temperature, the energy consumption is increased due to the high crystallization temperature, and the transparent conductive film may be damaged by the high temperature thermal process.

Therefore, it is required to develop a transparent conductive film based on ITO having a low surface resistance without increasing the crystallization temperature.

The present invention provides a sputtering target used for forming a conductive layer of a transparent conductive film having a low resistivity and achieving a rapid crystallization rate at a low crystallization temperature, and a sputtering apparatus including the sputtering target.

The present application also provides a transparent conductive film and a method of manufacturing the same, which respond to the large-sized surface due to low resistivity and have a fast response speed.

SUMMARY OF THE INVENTION The present invention has been conceived to solve the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a metal oxide composite, which comprises a first block including a first metal oxide complex and a second block including a second metal oxide complex having a composition different from that of the first metal oxide complex, To a sputtering target.

In one example, the first and second metal oxide composites may be indium-based oxide composites.

In one example, the indium-based oxide complex may be made of indium oxide only, or the indium oxide may be doped with a divalent or tetravalent metal oxide.

The first block of the sputtering target of the present application comprises a first indium oxide complex having 0 to 7% by weight of divalent or tetravalent metal oxides based on the total weight of the composite, and the second block comprises 5 To 15% by weight of a divalent or tetravalent metal oxide.

The present application also relates to a sputtering apparatus comprising a sputtering target.

The present application also discloses a film comprising a substrate film; An undercoat layer formed on the base film; And a conductive layer formed on the undercoat layer, wherein the conductive layer includes a first metal oxide complex and a second metal oxide complex having a composition different from that of the first metal oxide complex, 2 region of the transparent conductive film.

The first region of the transparent conductive film of the present application comprises a first indium oxide complex having 0 to 7 wt% of a divalent or tetravalent metal oxide based on the total weight of the composite, And a second indium-based oxide complex having 5 to 15% by weight of a divalent or tetravalent metal oxide.

The present application is also directed to a sputtering target comprising a first block comprising a first metal oxide complex on a substrate film and a second block comprising a second metal oxide complex of a composition different from the first metal oxide complex, To form a conductive layer on the transparent conductive film.

The present application also relates to a touch panel including a transparent conductive film.

The present application can provide a sputtering target used for forming a conductive layer of a transparent conductive film having a low resistivity and achieving a high crystallization rate at a low crystallization temperature and a sputtering apparatus including the sputtering target.

The present application can also provide a transparent conductive film and a method of manufacturing the transparent conductive film which respond to the large-sized surface due to low resistivity and have a fast response speed.

1 is a schematic view of a sputtering target of the present application.
2 is a schematic diagram of the transparent conductive film of the present application.

The present application relates to a sputtering target.

The term " sputtering " in the present application means a method in which an ion with energy (for example, Ar ⁺ ) impacts a target material, and a target material that is detached at this time is deposited on the substrate. Such sputtering can be achieved by replacing a target material with various kinds of materials, and it can be refractory metal because it is irrelevant to the melting point of the target. Further, it is economical because it has less cost and apparatus than other vapor deposition methods, There is an advantage that it is possible.

The term " sputtering target " in this application may refer to a member for a sputtering process that includes a material that is deposited on a material to be subjected to a reactive sputtering process.

Exemplary sputtering targets of the present application may include at least one of a first block comprising a first metal oxide complex and a second block comprising a second metal oxide complex of a composition different from the first metal oxide complex.

The sputtering target of the present application has blocks comprising metal oxide composites of different compositions. Thus, the sputtering target of the present application can be used to form a conductive layer that includes regions having compositions of metal oxide composites that are different from each other.

The conductive layer on which the metal oxide composites having different compositions are deposited can have a lower surface resistance than that of the conductive layer deposited with a conventional single composition and can be crystallized at a relatively low crystallization temperature.

In one example, the sputtering target may further comprise, in addition to the first block and the second block, another block comprising the metal oxide complex of the same composition as the first block or the second block, for example, , A fourth block or a fifth block.

In a specific example, the sputtering target may include a 1-2-3-4-5 block, and the 1, 3, 5 block (A block) and the 2, 4 block (B block) Oxide complex, and the A block and the B block may comprise metal oxide complexes having different compositions.

 As described above, since the sputtering target of the present application contains two or more blocks each having the metal oxide composite of the different composition, the surface resistance of the transparent conductive film including the conductive layer formed using the sputtering target is lowered, The time for crystallization can be shortened.

In one example, the first and second metal oxide composites may be indium-based oxide composites.

Specifically, the indium-based oxide complex may be made of only indium oxide, or the indium oxide may be doped with a divalent or tetravalent metal oxide.

In one example, the divalent metal oxide may be represented by the following formula (1).

[Chemical Formula 1]

XO

In Formula 1, X represents a divalent metal element selected from the group consisting of Co, Ni, Cu, Pg, Ag, Au, Zn and Mg.

The application is based on the use of an indium oxide complex in which a divalent metal oxide is doped with indium oxide, thereby ensuring stable semiconductor characteristics in forming a transparent conductive thin film.

In one example, the tetravalent metal oxide may be represented by the following formula (2).

(2)

YO ₂

In Formula 2, Y represents a tetravalent metal element selected from the group consisting of Sn, Zr, Ge, Ti, Ce, Nb, Ta, Mb and W.

In the present application, the bulk resistance of the sputtering target can be lowered and the conductivity of the sputtering target can be improved by using the indium oxide complex doped with the tetravalent metal oxide in the indium oxide.

In one example, the first block of the sputtering target may comprise a first indium based oxide complex and the second block may comprise a second indium based oxide complex. Further, the first and second indium based oxide composites have different compositions from each other.

The above-mentioned different compositions may mean that the indium oxide content of the indium oxide composite is different, or the divalent or tetravalent metal oxide type or content is different.

In a specific example, the first block of the sputtering target may comprise a first indium-based oxide complex having from 0 to 7% by weight, based on the total weight of the composite, of a divalent or tetravalent metal oxide. In another example, the first block comprises a first indium-based oxide complex having from 1 to 7% by weight, from 2 to 7% by weight or from 3 to 7% by weight of a divalent or tetravalent metal oxide based on the total weight of the composite .

In addition, the second block of the sputtering target may comprise a second indium based oxide complex having a divalent or tetravalent metal oxide in an amount of 5 to 15% by weight based on the total weight of the composite. In another example, the second block comprises a second indium-based oxide complex having a divalent or tetravalent metal oxide in an amount of from 6 to 15% by weight, from 7 to 15% by weight, or from 8 to 15% by weight based on the total weight of the composite can do.

That is, the first block of the sputtering target of the present application comprises a first indium-based oxide composite having 0 to 7% by weight of divalent or tetravalent metal oxide based on the total weight of the composite, and the second block comprises the total weight of the composite And a second indium based oxide complex having a divalent or tetravalent metal oxide in an amount of 5 to 15% by weight.

When the metal oxide content of the first block and the second block exceeds the above range, it takes a long time to crystallize the conductive layer to be described later, thereby making it difficult to obtain a crystallized conductive layer.

The term "crystallized conductive layer" in the present application means a conductive layer having crystallinity (%) of 75% or more, 80% or more, 85% or more, or 90% or more after a predetermined heat treatment.

By controlling the first and second metal oxide composites to different compositions, the sputtering target of the present application can improve the crystallization speed at the same time as the lower temperature while reducing the surface resistance of an ITO thin film to be described later. The term " ITO thin film " in this application can be used in the same meaning as the conductive layer of the transparent conductive film.

The present application also relates to a sputtering apparatus comprising the sputtering target.

In one example, the sputtering apparatus includes a vacuum chamber including a target for generating a target material therein, and a substrate seating portion on which the substrate is placed with a predetermined distance from the target; A gas injection unit for injecting a gas into the vacuum chamber; A vacuum pump for removing gas or impurities in the vacuum chamber; A magnet formed outside the vacuum chamber to form a magnetic field in the target; And a power supply unit for supplying power to the target and the wafer.

The sputtering apparatus of the present application may also include various configurations that can be used in a known sputtering apparatus in addition to the above-described configurations.

The present invention relates to a transparent conductive film comprising a conductive layer formed using the sputtering target.

The transparent conductive film of the present application can overcome the problem of lowering the recognition speed due to the surface resistance that may occur when applied to a large area touch screen panel and can crystallize quickly at a low temperature, And the rise of the resistivity can be minimized.

In one example, the present application is directed to a film comprising a substrate film; An undercoat layer formed on the base film; And a conductive layer formed on the undercoat layer, wherein the conductive layer includes a first metal oxide complex and a second metal oxide complex having a composition different from that of the first metal oxide complex, 2 region of the transparent conductive film.

In other words, the transparent conductive film according to the present application can maintain the surface resistance of the transparent conductive film below a predetermined range by differently controlling the composition of the first region and the metal oxide complex in the second region included in the conductive layer, It is possible to minimize the damage of the base film due to the heat treatment process.

The transparent conductive film of the present application includes a base film.

In one example, the base film is a transparent film, and can be employed without limitations in the known range of transparency and strength in an appropriate range and suitable for a conductive film.

Specifically, the base film may be made of polyolefin such as polyethylene or polypropylene; Polyesters such as polyethylene terephthalate and polyethylene naphthalate; Polyamides such as 6-nylon or 6,6-nylon; Polycarbonate; Polyethersulfone; Or a norbornene resin can be used, but the present invention is not limited thereto. The base film can be formed singly or in combination of two or more kinds. Further, the base film may have a single-layer structure or a multi-layer structure.

The base film of the present application may also be one whose surface has been modified. The surface modification is intended to improve the adhesion with the undercoat layer by imparting polarity. When forming the conductive layer including the first region and the second region having the metal oxide composites of different compositions, But may be for further clarification.

In one example, the substrate film may be a surface modified by a known treatment method such as a chemical treatment, a corona discharge treatment, a mechanical treatment, an ultraviolet (UV) treatment, an active plasma treatment or a glow discharge treatment.

The base film may contain known additives such as an antistatic agent, an ultraviolet absorber, an infrared absorber, a plasticizer, a lubricant, a colorant, an antioxidant or a flame retardant.

The thickness of the base film may be set to a suitable thickness range in consideration of transparency, the purpose of minimizing the occurrence of thinning and the occurrence of wrinkles due to tension during processing, and the like. In one example, the substrate film may have a thickness ranging from 10 占 퐉 to 80 占 퐉, or from 20 占 퐉 to 50 占 퐉, but is not limited thereto.

The transparent conductive film of the present application includes an undercoat layer between the base film and the conductive layer. The undercoat layer improves the adhesion between the conductive layer and the base film, and can be advantageously used for improving scratch resistance, bending resistance and rutting characteristics.

The undercoat layer may include an inorganic material, an organic material, or an organic composite material. As the inorganic material, for example, SiO ₂ , MgF ₂ or Al ₂ O ₃ can be exemplified. As the organic material, an acrylic polymer, a urethane polymer, a melamine polymer, an alkyd polymer or a siloxane polymer can be exemplified As the organic-inorganic composite material, a composite of at least one kind of inorganic material and at least one kind of organic material can be exemplified. In one example, the undercoat layer can be formed using a thermosetting resin comprising a mixture of a melamine resin, an alkyd polymer and an organosilane condensate as a sol-gel reaction product of an organic silane-containing mixture or an organic material.

The undercoat layer may be formed by, for example, vacuum vapor deposition, sputtering, ion plating, coating or the like. The undercoat layer may be formed to a thickness of usually 100 nm or less, 15 nm to 100 nm, or 20 nm to 60 nm.

The transparent conductive film includes a conductive layer. In addition, the conductive layer includes a first region including a first metal oxide complex and a second region including a second metal oxide complex which is different in composition from the first metal oxide complex.

In one example, the first and second metal oxide composites may be indium-based oxide composites.

Specifically, the first and second metal oxide composites of the conductive layer may be formed by sputtering a first metal oxide composite and a second metal oxide composite, respectively, which are included in the first block and the second block of the sputtering target described above, Layer. ≪ / RTI >

In one example, the indium-based oxide complex contained in the first region and the second region of the conductive layer may be made of only indium oxide, or the indium oxide may be doped with a divalent or tetravalent metal oxide.

The divalent or tetravalent metal oxide may be selected from those mentioned above in the sputtering target.

In one specific example, the metal oxide complex included in the conductive layer of the present application may be indium tin oxide (ITO), but is not limited thereto.

Specifically, the first region of the conductive layer of the present application may comprise a first indium oxide complex having a divalent or tetravalent metal oxide in an amount of 0 to 7% by weight based on the total weight of the composite.

In another example, the first region comprises a first indium-based oxide complex having a divalent or tetravalent metal oxide in an amount of from 1 to 7% by weight, from 2 to 7% by weight, or from 3 to 7% by weight based on the total weight of the composite .

In addition, the second region of the conductive layer may comprise a second indium-based oxide complex having a divalent or tetravalent metal oxide in an amount of 5 to 15% by weight based on the total weight of the composite.

In another example, the second region comprises a second indium-based oxide complex having a divalent or tetravalent metal oxide in an amount of from 6 to 15 wt%, from 7 to 15 wt%, or from 8 to 15 wt%, based on the total weight of the composite .

The transparent conductive film of the present application can realize low surface resistance of the transparent conductive film by controlling the weight percentage of the metal oxide in the composite contained in the first region and the second region within the above range, The time required for crystallization can be shortened.

The conductive layer of the present application may be formed in one conductive layer, with each of the first and second regions including the first indium based oxide complex and the second indium based oxide complex. That is, since the conductive layer of the present application forms regions in one layer, it is easy to manage the process and economical cost can be saved.

In one example, the first region of the conductive layer may be present in the range of 10 to 90% of the total conductive layer area. By controlling the area of the first region in the above range, the surface resistance of the transparent conductive film can be lowered.

The second region of the conductive layer may be present in the range of 10 to 90% of the total conductive layer area. By controlling the area of the second region in the above range, crystallization at a lower temperature can be induced.

In addition, the conductive layer of the present application may have a structure in which a plurality of conductive layers including at least one region having indium oxide complexes of different compositions are stacked.

In one example, in the transparent conductive film of the present application, the conductive layer including the first region and the second region may be formed into a single-layer, two-layer, or multilayer structure in consideration of the surface resistance and the crystallization factor have.

The thickness of the conductive layer may be in the range of, for example, 10 nm to 40 nm, 10 nm to 35 nm, 10 nm to 30 nm, or 10 nm to 25 nm. The thickness of the conductive layer may be as thin as possible if the strength is significantly lowered. If the thickness of the conductive layer is thicker than the above range, the light transmittance may be lowered.

In the transparent conductive film according to the present application, the surface resistance value of the conductive layer is in the range of 70 to 150 Ω / □, 70 to 145 Ω / □, 70 to 140, 70 to 135 Ω / □, or 70 to 130 Ω / □ . By controlling the surface resistance value of the conductive layer within the above range, an excellent recognition speed can be obtained when the transparent conductive film including the conductive layer is applied to the touch screen panel.

As described above, the conductive layer of the present application can have a high crystallization rate even at a low heat treatment temperature.

In one example, the conductive layer of the present application may have a crystallization time of 20 to 80 minutes at a temperature of 10 [deg.] C to 200 [deg.] C.

In the above, the term crystallization time may mean a time required for crystallization of the conductive layer to be 75% or more, 80% or more, 85% or more, or 90% or more.

The present application also relates to a method for producing a transparent conductive film comprising forming a conductive layer on a base film by using a sputtering target comprising a block containing a metal oxide complex of the above-mentioned different composition.

In the present application, the manufacturing method may include forming a conductive layer using a sputtering apparatus including the above-described sputtering target. The operating conditions of the sputtering apparatus, for example, the pressure and the temperature conditions are not particularly limited.

In one example, the process of forming a conductive layer includes sputtering comprising at least one second block comprising a first block comprising a first metal oxide complex and a second metal oxide complex of a composition different from the first metal oxide, And depositing the target material using a known sputtering method at a pressure of 1 to 30 mtorr and a temperature of 100 to 500 < 0 > C.

The method of depositing the target material may be performed by, for example, locating a sputtering target having a block containing a metal oxide complex of a composition different from the direction perpendicular to the transport direction of the base film, A method of depositing a first metal oxide complex contained in one block and depositing a second metal oxide composite included in the second block on the second region may be used.

That is, the manufacturing method may include forming a first region including the first metal oxide complex of the conductive layer, and forming a second region including the second metal oxide complex. The first region may induce crystallization at a low temperature and the second region may enable a low surface resistance implementation.

In the forming of the first region and the second region, the base film may be transported at a constant speed in the transport direction, and the transport speed may be changed depending on the ratio of the desired area of the first region and the second region to the conductive layer Lt; / RTI >

The method may further include a step of performing heat treatment at a temperature of 100 ° C or lower after the step of forming the second region.

After the step of forming the second region, the step of heat-treating may be performed at a temperature of 100 ° C or less, or 10 to 100 ° C. The heat treatment time may be 120 minutes or less, 90 minutes or less, or 60 minutes or less. By appropriately selecting the heat treatment temperature and time, a crystallized candy layer can be obtained without deterioration in terms of productivity and quality. The heating time is preferably 30 minutes or more from the viewpoint of complete crystallization of the conductive layer.

And forming an undercoat layer on the base film before the step of forming the conductive layer. The undercoat layer is for improving the optical characteristics of the film, and specific components, characteristics, thickness, and the like are as described above.

The present application also relates to a touch panel including a conductive film.

Since the conductive film according to the present application has a low surface resistance and is manufactured with low crystallization temperature characteristics, it can be easily applied to a large-sized touch panel requiring fast recognition speed.

The touch panel may be used in a display device such as, for example, an LCD, a PDP, an LED, an OLED or an E-paper, but is not limited thereto.

Hereinafter, the conductive film according to the present application will be described in more detail with reference to Examples and Comparative Examples. However, the following Examples and Comparative Examples are merely examples according to the present application and do not limit the technical idea of the present application. It will be apparent to those of ordinary skill in the art.

One. The  Resistance measurement

A conductive layer was deposited on a base film using a sputtering apparatus including a sputtering target including first and second blocks according to Examples and Comparative Examples, and a temperature condition of 130 ° C for crystallization of the deposited conductive layer And the surface resistance (Ω / □) is measured by a 4-probe measurement method (Loresta EP MCP-T360).

2. Crystallization time measurement

The time required for the crystallization degree of the conductive layer to become about 75% was calculated by heating the transparent conductive film according to the examples and the comparative example at 130 캜.

Example  One

Sputtering Target  Produce

In the first block  Produce

Indium oxide: tin oxide having an average particle diameter of 4 탆 or less corresponding to 4 N was mixed in a weight ratio of 93: 7 as a raw material, and the mixture was supplied to a wet ball mill and mixed and pulverized for 20 hours to obtain a raw material fine powder.

The obtained mixed slurry was taken out, filtered, dried and assembled. The granulated product was pressed at a pressure of 294 MPa to form a cold isostatic press. This was charged in a firing furnace and fired under the pressure of oxygen gas at 1400 캜 for 48 hours to obtain a first block. The rate of temperature increase up to 1000 ° C was 50 ° C / hour, and the rate of temperature increase up to 1400 ° C was 150 ° C / hour. The rate of decline was 100 占 폚 / hour.

The second block  Produce

The second block was produced through the same production process as in the first block except that the weight ratio of indium oxide: tin oxide was 90:10.

Multiple composition Sputtering target  Produce

A multicomponent sputtering target was prepared from the blocks obtained above in a 1 block-2 block-1 block structure.

Production of transparent conductive film

The multicomponent sputtering target obtained above was mounted on a DC magnetron sputtering apparatus, and a PET base film (UH-13 PET, refractive index of about 1.65) having a thickness of 50 占 퐉, which had been subjected to two-side mold removal at room temperature, was transferred in a direction orthogonal to the sputtering target Thereby forming a first conductive layer.

In the same manner, the second conductive layer was formed while re-transferring the PET base film on which the first conductive layer was deposited. The sputtering conditions were set at a sputtering pressure of 1 × 10 ^-1 Pa, a final pressure of 5 × 10 ^-4 Pa, a substrate temperature of 200 ° C., an input power of 120 W, and a film forming time of 15 minutes.

As a result, a transparent conductive film having a two-layer structure conductive layer having a film thickness of 20 nm was obtained on the base film. The conductive layer according to the first embodiment has a structure in which a second layer including a first region / a second region / a first region is formed on a first layer including a first region / a second region / a first region , Surface resistance value and crystallization time are shown in Table 2 below.

Example  2 to 12

Sputtering Target  Produce

A block was prepared in the same manner as in Example 1, except that the indium oxide: tin oxide weight ratio was set as shown in the following Table 1, and a multicomponent sputtering target including the block was prepared.

Production of transparent conductive film

A transparent conductive film was prepared in the same manner as in Example 1, except that the thickness of the conductive layer was set as shown in Table 1 below.

Comparative Example  1 to 3

Sputtering Target  Produce

A first block was prepared in the same manner as in Example 1 except that the indium oxide: tin oxide weight ratio was set as shown in Table 1, and a sputtering target consisting of the first block was prepared.

Production of transparent conductive film

A transparent conductive film was prepared in the same manner as in Example 1, except that the thickness of the conductive layer was set as shown in Table 1 below.

Indium oxide: tin oxide weight ratio Conductive layer thickness (nm The first block The second block Example 2 93: 7 90:10 22 Example 3 95: 5 90:10 20 Example 4 95: 5 90:10 22 Example 5 95: 5 90:10 25 Example 6 97: 3 90:10 20 Example 7 97: 3 90:10 22 Example 8 100: 0 88:12 20 Example 9 100: 0 88:12 22 Example 10 97: 3 88:12 20 Example 11 97: 3 88:12 22 Example 12 97: 3 88:12 25 Comparative Example 1 93: 7 22 Comparative Example 2 91.5: 8.5 22 Comparative Example 3 90:10 22

Surface resistance (Ω / □) Crystallization time (minutes) Example 1 110 75 Example 2 97 70 Example 3 114 45 Example 4 100 45 Example 5 83 30 Example 6 122 45 Example 7 104 45 Example 8 108 45 Example 9 96 40 Example 10 107 50 Example 11 92 50 Example 12 78 30 Comparative Example 1 112 40 Comparative Example 2 101 60 Comparative Example 3 90 100

10: first block
20: second block
100: conductive layer
110: first region
120: second area
200: undercoat layer
300: substrate film

Claims (20)

A second block comprising a first block comprising a first metal oxide complex and a second metal oxide complex of a composition different from the first metal oxide complex. The method according to claim 1,
Wherein the first and second metal oxide composites are indium-based oxide composites. 3. The method of claim 2,
The indium-based oxide composite is made of only indium oxide, or the indium oxide is doped with a divalent or tetravalent metal oxide. The method of claim 3,
The divalent metal oxide may be a sputtering target having the following Formula 1:
[Chemical Formula 1]
XO
In Formula 1, X represents a divalent metal element selected from the group consisting of Co, Ni, Cu, Pg, Ag, Au, Zn and Mg. The method of claim 3,
The tetravalent metal oxide may be a sputtering target having the following Formula 2:
(2)
YO ₂
In Formula 2, Y represents a tetravalent metal element selected from the group consisting of Sn, Zr, Ge, Ti, Ce, Nb, Ta, Mb and W. The method according to claim 1,
The first block comprises a first indium-based oxide complex having 0 to 7% by weight of divalent or tetravalent metal oxides relative to the total weight of the composite and the second block comprises 5 to 15% by weight of the total of the composite And a second indium-based oxide complex having a valence of at least one valence of at least one element selected from the group consisting of tetravalent metal oxides. A sputtering apparatus comprising the sputtering target of claim 1. A base film;
An undercoat layer formed on the base film; And
And a conductive layer formed on the undercoat layer,
Wherein the conductive layer comprises a first region comprising a first metal oxide complex and a second region comprising a second metal oxide complex of a composition different from the first metal oxide complex. 9. The method of claim 8,
The base film may be a polyolefin; Polyester; Polyamide; Polycarbonate; Polyethersulfone; Or a norbornene-based resin. 9. The method of claim 8,
Wherein the undercoat layer is an inorganic layer, an organic material layer or a organic-inorganic composite layer. 9. The method of claim 8,
Wherein the first and second metal oxide composites are indium-based oxide composites. 12. The method of claim 11,
Wherein the indium oxide composite comprises only indium oxide, or the indium oxide is doped with a divalent or tetravalent metal oxide. 9. The method of claim 8,
The first region comprises a first indium oxide complex having 0 to 7 weight percent of a divalent or tetravalent metal oxide based on the total weight of the composite and the second region comprises 5 to 15 weight percent of the total weight of the composite, And a second indium-based oxide complex having a trivalent or tetravalent metal oxide. 9. The method of claim 8,
Wherein the first region is in the range of 10 to 90% of the total conductive layer area. 9. The method of claim 8,
And the second region is in the range of 10 to 90% of the total conductive layer area. 9. The method of claim 8,
And the thickness of the conductive layer is in the range of 10 nm to 40 nm. 9. The method of claim 8,
And the surface resistance value of the conductive layer is in the range of 70 to 150? / ?. 9. The method of claim 8,
Wherein the conductive layer has a crystallization time in the range of 20 to 80 minutes at a temperature of 10 to 200 캜. A method for producing a transparent conductive film, which comprises forming a conductive layer on a base film using the sputtering target of claim 1. 9. A touch panel comprising the transparent conductive film of claim 8.

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